CN108233180B - 808nm semiconductor laser structure with AlGaInP structure - Google Patents
808nm semiconductor laser structure with AlGaInP structure Download PDFInfo
- Publication number
- CN108233180B CN108233180B CN201611193555.8A CN201611193555A CN108233180B CN 108233180 B CN108233180 B CN 108233180B CN 201611193555 A CN201611193555 A CN 201611193555A CN 108233180 B CN108233180 B CN 108233180B
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- doping concentration
- upper limiting
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
Abstract
The invention relates to a 808nm semiconductor laser structure with an AlGaInP structure, which sequentially comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, a first upper limiting layer, a second upper limiting layer and an ohmic contact layer from bottom to top, wherein a corrosion barrier layer passing through a selective corrosion solution containing an Al material is arranged between the first upper limiting layer and the second upper limiting layer. During corrosion, the corrosion surface can be stopped at the corrosion barrier layer by a selective corrosion solution of the Al-containing material. The symmetry of the ridge structure on both sides and the consistency between different batches are greatly improved.
Description
Technical Field
The invention relates to a 808nm semiconductor laser structure with an AlGaInP structure, belonging to the technical field of semiconductor lasers.
Background
The semiconductor laser has the advantages of compact structure, low cost, easy regulation of optical field, etc., and is widely applied to pumping solid lasers, material processing, laser medical treatment, etc. Among them, semiconductor lasers having wavelengths around 808nm are mainly used in two categories. YAG, and 532nm of general green light is obtained by frequency doubling. The green light of the low-power laser pump is generally several milliwatts to dozens of milliwatts, and can be used as an indicating and positioning tool, the market demand is large, and the consistency and the cost of batch production are critical. Another class of uses is: the high-power laser can be used for laser cosmetology, physical therapy, material processing and night market lighting lamps, the yield requirement is not high, but the additional yield value is high, and the performance requirement on the laser is also high. At present, the core chips of the high-power 808nm semiconductor laser can be manufactured by only a few large factories such as the United states, Germany and the like, and because the stacked array product can be used as the military, part of the products are forbidden to be exported. Domestic manufacturers mainly use medium and small power, the competition is strong, and the cost control is particularly important.
AlGaAs materials were the earliest materials used to fabricate 808nm semiconductor lasers due to their ease of growth and material lattice matching. For example, chinese patent document CN1O4600562A discloses an 8O8nm flattop optical field high-power laser, which includes a substrate, and a buffer layer, a lower confinement layer, a lower optical field acting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper optical field acting layer, an upper confinement layer and an electrode contact layer, which are sequentially grown on the substrate from bottom to top. The lower light field action layer is made of a highly doped N-type AlGaAs material, and the upper light field action layer is made of a highly doped P-type AlGaAs material. The top of the fast axis light field is uniformly distributed, the light power density of the active region can be further reduced, and the reliability and the durability of the laser are improved. However, the aluminum-containing material is very easy to oxidize, forms a deep energy level, enhances the non-radiative recombination rate of carriers, causes the cavity surface of the semiconductor laser to be overheated, promotes the generation and the expansion of dark line defects, and reduces the output power and the reliability of the laser.
In recent years, a semiconductor laser of (Al) GaInP/GaAsP structure having an aluminum-free active region has attracted much attention. Compared with a semiconductor laser made of AlGaAs material, the semiconductor laser has the following advantages: the active region does not contain aluminum, so that the generation of dark line defects can be effectively inhibited, and non-radiative recombination centers are reduced; the interface recombination rate is reduced, so that the internal quantum efficiency is increased; the tensile strain quantum well relaxes on a cleavage plane to increase the band gap of a window region and improve the optical damage threshold of the cavity surface.
Chinese patent document CN103457158A discloses a TM polarized GaAsP/GaInP quantum well laser, where the active region is made of an aluminum-free material, which can effectively reduce the influence of oxidation of aluminum components, rough growth interface, and additional electric field at the cavity surface on the power output and reliability of the laser. Meanwhile, the waveguide layer and the limiting layer are designed to be in an asymmetric structure, so that the internal loss can be effectively reduced, and the maximum output power and reliability can be improved.
Non-patent literature proc.of SPIE vol.610461040 b studies the influence of quantum well strain amount of InGaAsP/GaInP structure semiconductor laser on the threshold current density and gain coefficient of the laser, and finds that increasing the strain amount can effectively improve the optical power, thereby increasing the power conversion efficiency of the semiconductor laser.
These lasers are designed using AlGaInP materials, but one problem exists. In chip processing, a wet etching process is generally used to form a ridge structure for current confinement and light confinement. When the upper cladding layer is an independent AlGaInP structure, the corrosion depth between batches can be regulated and controlled only by experience and time, and the consistency and the controllability are poor. Even on both sides of the ridge structure, the erosion depth is not uniform, which greatly affects the uniformity of the electrical parameters and the light spots. Therefore, the pure AlGaInP structure laser is difficult to control in the consistency and repeatability of mass production.
Disclosure of Invention
Aiming at the problem of poor repeatability of electrical parameters and light spots caused by inconsistent corrosion depth when an existing 808nm semiconductor laser with an AlGaInP structure is manufactured into a ridge structure, the invention provides a novel semiconductor laser structure with the AlGaInP structure;
the invention can accurately control the corrosion depth, can ensure the repeatability among batches and is suitable for batch production.
The technical scheme of the invention is as follows:
the utility model provides a 808nm semiconductor laser structure of AlGaInP structure, from supreme substrate, buffer layer, lower limiting layer, lower waveguide layer, quantum well, last waveguide layer, first upper limiting layer, second upper limiting layer and ohmic contact layer of being in proper order down, first upper limiting layer with be equipped with the corrosion barrier layer through the selective corrosion solution who contains the Al material between the second upper limiting layer.
The design has the advantage that a corrosion barrier layer is added between the first upper limiting layer and the second upper limiting layer, and the corrosion surface can be stopped at the corrosion barrier layer by a selective corrosion solution of an Al-containing material during corrosion. The symmetry of the two sides of the strip-shaped luminous region and the consistency among different batches are greatly improved, as shown in fig. 1, the difference between the heights of the two sides of the strip-shaped luminous region of the 808nm semiconductor laser with the traditional AlGaInP structure is more than 100 nanometers, which can cause the difference of the effective refractive indexes of the two sides, thereby influencing the electrical parameters and the light spots. After the corrosion barrier layer is added, the strip-shaped light emitting area is as shown in figure 2, and the heights of the two sides of the strip-shaped light emitting area are almost consistent. Meanwhile, due to the use of the corrosion barrier layer, the window of the original corrosion time is enlarged, the repeatability is improved, the cost is reduced, and the method is suitable for mass production.
Preferably, the corrosion barrier layer is P-type GamIn1-mP or P type GaAsnP1-nDoping concentration of 5-10 × 1017cm-3The thickness is 5-20nm, the value range of m is 0.4-0.6, and the value range of n is 0.9-1;
the advantage of the design here is that the etch stop layer uses P-type GamIn1-mP material or P type GaAsnP1-nThe barrier layer does not contain Al, has larger content difference with the Al of the second limiting layer, can obtain larger selective corrosion ratio, and ensures that the barrier layer can block the corrosion of the solution.
Further preferably, the corrosion barrier layer is P-type Ga0.5In0.5P or P type GaAs0.95P0.05Doping concentration of 7X 1017cm-3And the thickness is 15 nm.
The advantage of the design here is that the etch stop layer uses P-type Ga0.5In0.5P, which is lattice-matched with the substrate, can be grown to a certain thickness without generating mismatch defects, and a high-quality second upper limiting layer can be obtained.
Preferably, according to the present invention, the first upper limiting layer is P-type (Al)yGa1-y)0.5In0.5P and y are 0.1-0.4, and the doping concentration is 5-10 × 1017cm-3The thickness is 100-400 nm; the second upper limiting layer is P-type (Al)zGa1-z)0.5In0.5P and z are 0.9-1, and the doping concentration is 5-10 × 1017cm-3The thickness is 600-1100 nm;
further preferably, the first upper limiting layer is P-type (Al)yGa1-y)0.5In0.5The value of P and y is 0.2-0.3, and the doping concentration is 6-8 × 1017cm-3The thickness is 200-400 nm; the second upper limiting layer is P-type (Al)zGa1-z)0.5In0.5P and z are 0.9-1, and the doping concentration is 6-8 × 1017cm-3The thickness is 800-1000 nm;
most preferably, the first upper limiting layer is P-type (Al)yGa1-y)0.5In0.5P and y are 0.2, and the doping concentration is 7 multiplied by 1017cm-3The thickness is 300 nm; the second upper limiting layer is P-type (Al)zGa1-z)0.5In0.5P and z are 1 and the doping concentration is 7 multiplied by 1017cm-3The thickness is 1000 nm.
The advantage of this design is that the GaInP material of the etch stop layer is phosphide with the AlGaInP material of the first and second upper confinement layers, and is easy to grow without disturbing the original growth gas flow, and the GaInP material does not absorb any light emitted from the quantum well.
Preferably according to the invention, the substrate is biased<111>The crystal orientation N-type GaAs (100) single crystal wafer has an off angle of 5-15 deg and a doping concentration of 2 × 1018cm-3-5×1018cm-3(ii) a The buffer layer is made of N-type GaAs material and has a doping concentration of 1 × 1018cm-3-3×1018cm-3The thickness is 100-400 nm; the lower waveguide layer is undoped Ga0.5In0.5P, the thickness is 200-500 nm; the quantum well is made of tensile strain GaAsP material, the thickness is 5-15nm, and the lasing wavelength is 804-812 nm; the upper waveguide layer is undoped Ga0.5In0.5P, the thickness is 200-500 nm; the ohmic contact layer is heavily doped P-type GaAs with a doping concentration of 1 × 1019cm-3-1×1020cm-3The thickness is 150-250 nm.
The invention has the beneficial effects that:
1. and a GaInP corrosion barrier layer is added between the first upper limiting layer and the second upper limiting layer, and the corrosion surface can be stopped at the corrosion barrier layer by a selective corrosion solution containing Al materials during corrosion. The symmetry of the ridge structure on both sides and the consistency between different batches are greatly improved.
2. After the corrosion barrier layer is added, the height of the ridge structure is equal to the sum of the thicknesses of the second upper limiting layer and the ohmic contact layer, and the height of the ridge structure can be manually and accurately controlled, so that the current expansion and the lateral refractive index of the laser are regulated and controlled, and proper electrical parameters and optical field distribution are obtained.
3. The GaInP material of the corrosion barrier layer and the AlGaInP material of the first upper limiting layer and the second upper limiting layer are phosphide, so that the GaInP material is easy to grow, does not disturb the original growth airflow, and does not absorb the luminescence of the quantum well.
4. The use of the corrosion barrier layer enlarges the window of the original corrosion time, improves the repeatability, reduces the cost and is suitable for mass production.
Drawings
FIG. 1 is an electron microscope image of a stripe-shaped light emitting region of a 808nm semiconductor laser of a conventional AlGaInP structure;
the left side in fig. 1 is the left side of the strip-shaped light emitting region, and the right side in fig. 1 is the right side of the strip-shaped light emitting region.
FIG. 2 is an electron microscope image of a strip-shaped light emitting region of a 808nm semiconductor laser with an AlGaInP structure according to the present invention;
the left side in fig. 2 is the left side of the stripe-shaped light emitting region, and the right side in fig. 2 is the right side of the stripe-shaped light emitting region.
FIG. 3 is a schematic structural diagram of a 808nm semiconductor laser structure of AlGaInP structure of the present invention.
1. The semiconductor device comprises a substrate, a 2 buffer layer, a 3 lower limiting layer, a 4 lower waveguide layer, a 5 quantum well, a 6 upper waveguide layer, a 7 first upper limiting layer, a 8 corrosion barrier layer, a 9 second upper limiting layer, and a 10 ohmic contact layer.
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1
The utility model provides a 808nm semiconductor laser structure of AlGaInP structure, from supreme substrate 1, buffer layer 2, lower limiting layer 3, lower waveguide layer 4, quantum well 5, upper waveguide layer 6, first upper limiting layer 7, second upper limiting layer 9 and ohmic contact layer 10 of being in proper order down, first upper limiting layer 7 with be equipped with the corrosion barrier layer 8 through the selective etchant solution who contains the Al material between the second upper limiting layer 9. As shown in fig. 3.
The design has the advantage that a corrosion barrier layer is added between the first upper limiting layer and the second upper limiting layer, and the corrosion surface can be stopped at the corrosion barrier layer by a selective corrosion solution of an Al-containing material during corrosion. The symmetry of the two sides of the strip-shaped luminous region and the consistency among different batches are greatly improved, as shown in fig. 1, the difference between the heights of the two sides of the strip-shaped luminous region of the 808nm semiconductor laser with the traditional AlGaInP structure is more than 100 nanometers, which can cause the difference of the effective refractive indexes of the two sides, thereby influencing the electrical parameters and the light spots. After the corrosion barrier layer is added, the strip-shaped light emitting area is as shown in figure 2, and the heights of the two sides of the strip-shaped light emitting area are almost consistent. Meanwhile, due to the use of the corrosion barrier layer, the window of the original corrosion time is enlarged, the repeatability is improved, the cost is reduced, and the method is suitable for mass production.
The substrate 1 being biased<111>GaAs (100) single crystal wafer with crystal orientation of 10 deg and doping concentration of 2 × 1018cm-3(ii) a The buffer layer 2 is made of N-type GaAs material with doping concentration of 1 × 1018cm-3The thickness is 300 nm; the lower limiting layer 3 is 1200nm thick (Al)0.3Ga0.7)0.5In0.5P with a doping concentration of 1 × 1018cm-3(ii) a The lower waveguide layer 4 is undoped Ga having a thickness of 200nm0.5In0.5P; the quantum well 5 is GaAsP with the thickness of 10 nm; the upper waveguide layer 6 is undoped Ga having a thickness of 200nm0.5In0.5P; the first upper limiting layer 7 is 200nm thick (Al)0.3Ga0.7)0.5In0.5P with a doping concentration of 1 × 1018cm-3. The corrosion barrier layer 8 is a layer of Ga with the thickness of 10nm0.5In0.5P with a doping concentration of 1 × 1018cm-3. The second upper limiting layer 9 is Al with a thickness of 800nm0.5In0.5P with a doping concentration of 1 × 1018cm-3. The ohmic contact layer 10 is GaAs with a thickness of 200nm and a doping concentration of 5 × 1019cm-3。
The Ga content of the corrosion barrier layer 8 is much different from the Al content of the second upper limiting layer 9, and the selective corrosion rate ratio of the dilute hydrochloric acid solution to Al and Ga atoms is more than 1000. The corrosion barrier layer 8 can well block further corrosion of the solution, so that the corrosion stop surface is positioned on the surface of the corrosion barrier layer 8. The lower confinement layer 3, the first upper confinement layer 7, the lower waveguide layer 4 and the upper waveguide layer 6 are all symmetrical structures, but the refractive index of the second confinement layer 9 is much smaller than that of the lower confinement layer, and the optical field distribution is biased to the N region, so that the absorption of light by holes in the P region can be reduced.
Example 2
The 808nm semiconductor laser structure of AlGaInP structure according to embodiment 1 is different in that the substrate 1 is biased<111>GaAs (100) single crystal substrate with crystal orientation of 15 DEG and doping concentration of 3 x 1018cm-3. The buffer layer 2 is GaAs with a thickness of 200nm and a doping concentration of 1 × 1018cm-3. The lower limiting layer 3 is 1200nm thick (Al)0.2Ga0.7)0.5In0.5P with a doping concentration of 1 × 1018cm-3. The lower waveguide layer 4 is undoped Ga having a thickness of 500nm0.5In0.5And P. The quantum well 5 is GaAsP of 10nm thickness. The upper waveguide layer 6 is undoped Ga having a thickness of 500nm0.5In0.5And P. The first upper limiting layer 7 is 400nm thick (Al)0.3Ga0.7)0.5In0.5P with a doping concentration of 1 × 1018cm-3. The corrosion barrier layer 8 is a layer of Ga with the thickness of 10nm0.5In0.5P with a doping concentration of 1 × 1018cm-3. The second upper confinement layer 9 is 1000nm thick (Al)0.9Ga0.1)0.5In0.5P with a doping concentration of 1 × 1018cm-3. The ohmic contact layer 10 is GaAs with a thickness of 200nm and a doping concentration of 5 × 1019cm-3。
The main difference between this embodiment and embodiment 1 is that the lower waveguide layer 4 and the upper waveguide layer 6 have a large thickness, and the second upper confinement layer 9 has a relatively small influence on the optical field. An asymmetric structure is used in the lower confinement layer 3 and the first upper confinement layer 7 so that the optical field is still biased towards the N region. The Al component of the second upper limiting layer 9 is correspondingly reduced, and part of Ga atoms are added, so that the oxidation degree of a material with high Al component in the corrosive liquid can be prevented, and the absorption of light is reduced. Meanwhile, when the ridge structure is manufactured, the corresponding etching time needs to be increased.
Claims (5)
1. A808 nm semiconductor laser structure with an AlGaInP structure is characterized in that a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, a first upper limiting layer, a second upper limiting layer and an ohmic contact layer are sequentially arranged from bottom to top, and a corrosion barrier layer passing through a selective corrosion solution containing an Al material is arranged between the first upper limiting layer and the second upper limiting layer;
the selective corrosion solution is a dilute hydrochloric acid solution;
the corrosion barrier layer is P-type GamIn1-mP or P type GaAsnP1-nDoping concentration of 5-10 × 1017cm-3The thickness is 5-20nm, the value range of m is 0.4-0.6, and the value range of n is 0.9-1;
the first upper limiting layer is P-type (Al)yGa1-y)0.5In0.5P and y are 0.1-0.4, and the doping concentration is 5-10 × 1017cm-3The thickness is 100-400 nm; the second upper limiting layer is P-type (Al)zGa1-z)0.5In0.5P and z are 0.9-1, and the doping concentration is 5-10 × 1017cm-3The thickness is 600-1100 nm.
2. The structure of 808nm semiconductor laser of AlGaInP structure as claimed in claim 1 wherein said etch stop layer is P-type Ga0.5In0.5P or P type GaAs0.95P0.05Doping concentration of 7X 1017cm-3And the thickness is 15 nm.
3. The structure of claim 1, wherein the first upper confinement layer is P-type (Al) and has a wavelength of 808nmyGa1-y)0.5In0.5The value of P and y is 0.2-0.3, and the doping concentration is 6-8 × 1017cm-3The thickness is 200-400 nm; the second upper limiting layer is P-type (Al)zGa1-z)0.5In0.5P and z are 0.9-1, and the doping concentration is 6-8 × 1017cm-3The thickness is 800-1000 nm.
4. 808 of an AlGaInP structure according to claim 1A nm semiconductor laser structure, wherein said first upper confinement layer is P-type (Al)yGa1-y)0.5In0.5P and y are 0.2, and the doping concentration is 7 multiplied by 1017cm-3The thickness is 300 nm; the second upper limiting layer is P-type (Al)zGa1-z)0.5In0.5P and z are 1 and the doping concentration is 7 multiplied by 1017cm-3The thickness is 1000 nm.
5. The structure of claim 1 in which the substrate is biased to 808nm<111>The crystal orientation N-type GaAs (100) single crystal wafer has an off angle of 5-15 deg and a doping concentration of 2 × 1018cm-3-5×1018cm-3(ii) a The buffer layer is made of N-type GaAs material and has a doping concentration of 1 × 1018cm-3-3×1018cm-3The thickness is 100-400 nm; the lower waveguide layer is undoped Ga0.5In0.5P, the thickness is 200-500 nm; the quantum well is made of tensile strain GaAsP material, the thickness is 5-15nm, and the lasing wavelength is 804-812 nm; the upper waveguide layer is undoped Ga0.5In0.5P, the thickness is 200-500 nm; the ohmic contact layer is heavily doped P-type GaAs with a doping concentration of 1 × 1019cm-3-1×1020cm-3The thickness is 150-250 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611193555.8A CN108233180B (en) | 2016-12-21 | 2016-12-21 | 808nm semiconductor laser structure with AlGaInP structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611193555.8A CN108233180B (en) | 2016-12-21 | 2016-12-21 | 808nm semiconductor laser structure with AlGaInP structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108233180A CN108233180A (en) | 2018-06-29 |
| CN108233180B true CN108233180B (en) | 2020-11-10 |
Family
ID=62656753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611193555.8A Active CN108233180B (en) | 2016-12-21 | 2016-12-21 | 808nm semiconductor laser structure with AlGaInP structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108233180B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111478181B (en) * | 2019-01-23 | 2021-03-12 | 潍坊华光光电子有限公司 | Preparation method of multi-wavelength laser |
| CN111817136A (en) * | 2020-08-18 | 2020-10-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser and manufacturing method thereof |
| CN114079226B (en) * | 2020-08-21 | 2024-01-12 | 山东华光光电子股份有限公司 | High-uniformity high-power laser epitaxial wafer and preparation method thereof |
| CN112615258B (en) * | 2020-12-03 | 2022-03-15 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050041709A1 (en) * | 2003-08-19 | 2005-02-24 | Anikitchev Serguei G. | Wide-stripe single-mode diode-laser |
| CN102013633A (en) * | 2010-10-29 | 2011-04-13 | 北京工业大学 | Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof |
| CN102148478A (en) * | 2011-03-04 | 2011-08-10 | 中国科学院半导体研究所 | Method for manufacturing 980nm single-mode wavelength stabilized semiconductor laser |
| JP2011233832A (en) * | 2010-04-30 | 2011-11-17 | Hitachi Cable Ltd | EPITAXIAL WAFER FOR AlGaInP-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME |
| CN104242057A (en) * | 2014-09-22 | 2014-12-24 | 山东华光光电子有限公司 | Semiconductor laser with low working voltage and high power conversion efficiency |
| CN105406359A (en) * | 2015-12-29 | 2016-03-16 | 山东华光光电子有限公司 | AlGaInP semiconductor laser including high-selective corrosion barrier layer |
| CN106300012A (en) * | 2016-09-19 | 2017-01-04 | 山东华光光电子股份有限公司 | A kind of 808nm semiconductor laser containing high selective corrosion barrier layer |
-
2016
- 2016-12-21 CN CN201611193555.8A patent/CN108233180B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050041709A1 (en) * | 2003-08-19 | 2005-02-24 | Anikitchev Serguei G. | Wide-stripe single-mode diode-laser |
| JP2011233832A (en) * | 2010-04-30 | 2011-11-17 | Hitachi Cable Ltd | EPITAXIAL WAFER FOR AlGaInP-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME |
| CN102013633A (en) * | 2010-10-29 | 2011-04-13 | 北京工业大学 | Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof |
| CN102148478A (en) * | 2011-03-04 | 2011-08-10 | 中国科学院半导体研究所 | Method for manufacturing 980nm single-mode wavelength stabilized semiconductor laser |
| CN104242057A (en) * | 2014-09-22 | 2014-12-24 | 山东华光光电子有限公司 | Semiconductor laser with low working voltage and high power conversion efficiency |
| CN105406359A (en) * | 2015-12-29 | 2016-03-16 | 山东华光光电子有限公司 | AlGaInP semiconductor laser including high-selective corrosion barrier layer |
| CN106300012A (en) * | 2016-09-19 | 2017-01-04 | 山东华光光电子股份有限公司 | A kind of 808nm semiconductor laser containing high selective corrosion barrier layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108233180A (en) | 2018-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108233180B (en) | 808nm semiconductor laser structure with AlGaInP structure | |
| CN104242057B (en) | Semiconductor laser with low-work voltage and high power conversion efficiency | |
| WO2021102722A1 (en) | Single-longitudinal-mode edge-emitting laser with side grating oxidation-confinement structure, and preparation method therefor | |
| CN111682402B (en) | Surface-emitting semiconductor laser chip with symmetrical DBR structure and preparation method thereof | |
| CN101667715A (en) | Single-mode high-power vertical cavity surface emitting laser and manufacturing method thereof | |
| CN103872580A (en) | Dielectric film current limiting type vertical cavity surface emitting laser and manufacturing method thereof | |
| CN108155561A (en) | Epitaxial growth two-wavelength semiconductor laser | |
| JPH09107153A (en) | Short-wave vcsel having active region with no aluminum | |
| CN111146689A (en) | FP (Fabry-Perot) cavity GaN-based laser and manufacturing method thereof | |
| CN108233179B (en) | Red light semiconductor laser structure of no aluminium waveguide layer | |
| CN110112653B (en) | Vertical external cavity surface emitting semiconductor laser | |
| JPH07162086A (en) | Manufacture of semiconductor laser | |
| CN103401142A (en) | High-power high-stability single-mode vertical cavity surface emitting semiconductor laser | |
| CN212011600U (en) | Single longitudinal mode edge-emitting laser with lateral photogate oxidation limiting structure | |
| JP6347573B2 (en) | Semiconductor laser element | |
| CN112615258B (en) | Semiconductor laser structure | |
| US7965752B1 (en) | Native green laser semiconductor devices | |
| CN112582877B (en) | 650nm vertical cavity surface laser and preparation method thereof | |
| CN108539577A (en) | A kind of electric current guided VCSEL and preparation method thereof | |
| NL2026923B1 (en) | Dual-wavelength monolithic integrated surface-emitting semiconductor laser | |
| CN113140964B (en) | Semiconductor laser with refractive index reverse gradient waveguide layer and preparation method thereof | |
| JP2013247210A (en) | Semiconductor laser device | |
| CN114256742B (en) | High-power 980nm LD epitaxial wafer structure with superlattice narrow waveguide and preparation method thereof | |
| CN210040877U (en) | Vertical cavity surface emitting laser with horizontal air column current injection aperture structure | |
| CN110148885B (en) | Vertical cavity surface emitting laser with horizontal air column current injection aperture structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |