CN112615258B - Semiconductor laser structure - Google Patents

Semiconductor laser structure Download PDF

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CN112615258B
CN112615258B CN202011396116.3A CN202011396116A CN112615258B CN 112615258 B CN112615258 B CN 112615258B CN 202011396116 A CN202011396116 A CN 202011396116A CN 112615258 B CN112615258 B CN 112615258B
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layer
refractive index
waveguide
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semiconductor laser
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CN112615258A (en
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何林安
周坤
杜维川
李弋
高松信
唐淳
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Institute of Applied Electronics of CAEP
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Optics & Photonics (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a semiconductor laser structure, belonging to the technical field of semiconductor photoelectronics, the structure comprises: the semiconductor laser comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer which are arranged from bottom to top respectively, wherein high-refractive-index layers are embedded between the lower waveguide layer and the active layer and between the active layer and the upper waveguide layer respectively so as to effectively improve the fundamental mode limiting factor of a large optical cavity waveguide structure, enhance the limitation of a waveguide on current carriers, reduce the threshold current of a device, reduce the mode gain of a high-order mode, further improve the fundamental mode output power of the large optical cavity waveguide structure semiconductor laser, improve the light beam quality and lay a foundation for preparing a high-performance 790nm high-power semiconductor laser.

Description

Semiconductor laser structure
Technical Field
The invention belongs to the technical field of semiconductor photoelectron, and particularly relates to a semiconductor laser structure.
Background
The high-power semiconductor laser has wide application in civil and military fields such as medical treatment, mechanical processing, communication, guidance, pumping solid lasers, fiber lasers and the like. Wherein, the semiconductor laser with the wavelength of 790nm is mainly used for pumping thulium (Tm) doped fiber laser and the purposes of laser cosmetology, material processing, physical therapy and the like, the market demand is large, but the performance requirement on the laser is higher. At present, most domestic manufacturers can only produce medium and small power semiconductor lasers with 790nm wave bands. The high-power 790nm semiconductor laser can be produced by only a few companies in countries such as germany, the united states and the like, and because some products such as laser stacked arrays and the like can be applied to military affairs, related technologies and products thereof are forbidden to be exported to china.
As the lattice matching degree of the AlGaAs material and the GaAs substrate is very high and the AlGaAs material is easy to grow, the InGaAs/AlGaAs material system prepared on the GaAs substrate is widely applied to the preparation of semiconductor lasers with the wavelength range of 790-1060 nm. However, AlGaAs materials of the cavity surface are easily oxidized to form deep energy levels in the semiconductor forbidden band, which increases the non-radiative recombination rate of carriers near the cavity surface, so that the cavity surface of the semiconductor laser is overheated, which causes generation and expansion of dark line defects, especially when the photon energy with 790nm wavelength is high, heat is more easily accumulated on the light-emitting cavity surface, which causes cavity surface catastrophic optical damage (COMD), and reduces the output power and reliability of the laser.
In recent years, the use of aluminum-free active area GaAsP/GaInP and large cavity epitaxial structures has attracted considerable attention. Compared with a semiconductor laser made of AlGaAs material, the adoption of the aluminum-free material GaAsP/GaInP can effectively improve the oxidation of the cavity surface, reduce the deep energy level recombination center of the cavity surface material and improve the internal quantum efficiency, and the tensile strain quantum well enables the band gap of the cavity surface to be increased, thereby improving the optical damage threshold of the cavity surface. The adoption of the large optical cavity epitaxial structure is one of important methods for improving the output power of the semiconductor laser, and has the advantages of effectively reducing the power density of the cavity surface, improving the threshold value of the cavity surface caused by catastrophic optical damage and realizing the high-power output of the laser. However, the waveguide structure of the large optical cavity reduces the limiting factor of the fundamental mode, which results in the increase of the threshold current of the device and the reduction of the electro-optic conversion efficiency of the laser; on the other hand, the increase of the optical cavity necessarily increases the number of modes in the waveguide structure, high-order modes may appear and lase in the large optical cavity, so that the divergence angle of the far field of the fast axis is increased, the quality of the light beam is degraded, and the loss of the high-order modes in the waveguide is higher than that of the fundamental mode in the waveguide, so that the internal loss of the laser is increased, the improvement of the output power of the laser is not facilitated, and the external quantum efficiency of the device is reduced. The traditional method adjusts the limiting factors of a fundamental mode and a high-order mode by adjusting the position of a quantum well in a waveguide, but the method has limited regulation effect and poor experimental repeatability because of more modes in a large optical cavity structure.
In summary, the confinement factor of the fundamental mode in the 790nm semiconductor laser with the large optical cavity waveguide structure is low, and the mode gain of the high-order mode is large, which is very unfavorable for preparing a high-performance high-power semiconductor laser. Therefore, the confinement factor of the fundamental mode in the large optical cavity waveguide structure is improved through the epitaxial structure design, and the reduction of the mode gain of the high-order mode is particularly critical.
Disclosure of Invention
In view of the above, in order to solve the problems in the prior art, an object of the present invention is to provide a semiconductor laser structure, so as to achieve the purposes of effectively increasing the fundamental mode confinement factor of a large optical cavity waveguide structure, simultaneously enhancing the confinement of a waveguide to carriers, reducing the threshold current of a device, reducing the mode gain of a high-order mode, further increasing the fundamental mode output power of the large optical cavity waveguide structure semiconductor laser, improving the beam quality, and laying a foundation for preparing a high-performance 790nm high-power semiconductor laser.
The technical scheme adopted by the invention is as follows: a semiconductor laser structure, the structure comprising:
the substrate, the buffer layer, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the upper limiting layer and the ohmic contact layer are respectively arranged from bottom to top, wherein high-refractive-index layers are respectively embedded between the lower waveguide layer and the active layer and between the active layer and the upper waveguide layer; and high-refractive-index layers are added on two sides of the active layer, so that the optical field distribution in the epitaxial direction is effectively adjusted, the limiting factor of the fundamental mode is improved, the threshold value of the fundamental mode is reduced, and the output power of the fundamental mode is improved.
Further, the refractive index of the high refractive index layer is lower than that of the active layer, and the refractive index of the high refractive index layer is higher than that of the upper waveguide layer and the lower waveguide layer on two sides of the high refractive index layer; the mode gain of a high-order mode is reduced, the high-order mode lasing power is effectively reduced, and the efficiency of the semiconductor laser and the beam quality of a fast axis are improved;
the band gap of the high refractive index layer is higher than that of the active layer, and the band gap of the high refractive index layer is lower than that of the upper waveguide layer and the lower waveguide layer on two sides of the high refractive index layer; the limit effect on the current carrier is enhanced, the leakage of the current carrier is reduced, and the electric-optical conversion efficiency is improved.
Furthermore, the lower waveguide layer and the upper waveguide layer, and the lower limiting layer and the upper limiting layer are all in asymmetric structures.
Further, the high refractive index layer is unintentionally doped In1-xGaxAsyP1-yThe material, and the thickness of the high refractive index layer is 10-100 nm; wherein, the value range of x is0.51～0.90, y has a value range of0.10～0.50; high refractive index layer In1- xGaxAsyP1-yGa of material and waveguide layer0.51In0.49The P material and the GaAs material of the substrate are in lattice matching, so that the P material and the GaAs material of the substrate are easy to grow and have small influence on primary growth airflow.
Further, the upper waveguide layer and the lower waveguide layer are both unintentionally doped Ga0.51In0.49P material, the thickness of the upper waveguide layer is 200-600 nm and the thickness of the lower waveguide layer is 700-1300 nm.
Further, the lower confinement layer is N-doped (A1)mGa1-m)0.51In0.49P material with doping concentration of 1 × 1017cm-3～3×1018cm-3(ii) a The thickness of the lower limiting layer is 700-1500 nm; wherein m is a value of0.1～0.6；
The upper confinement layer is P-type doped (A1)mGa1-m)0.51In0.49P material with doping concentration of 3 × 1017cm-3～5×1018cm-3(ii) a The upper limiting layer has a thickness of 500-1200 nm; wherein m is a value of0.1～0.6。
Furthermore, the substrate is an N-type GaAs (100) single crystal wafer with a crystal orientation and a large deflection angleSmall 0-15 deg. and doping concentration of 2X 1018cm-3～5×1018cm-3。
Further, the buffer layer is made of N-type GaAs material and has a doping concentration of 1 × 1018cm-3～3×1018cm-3And the thickness of the buffer layer is 200-600 nm.
Furthermore, the active layer is made of tensile strain GaAsP material, the thickness is 5-15 nm, and the lasing wavelength is 785-794 nm.
Furthermore, the ohmic contact layer is made of heavily doped P-type GaAs material with the doping concentration of 3 multiplied by 1019cm-3～1×1020cm-3And the thickness of the ohmic contact layer is 150-250 nm.
The invention has the beneficial effects that:
1. by adopting the semiconductor laser structure made of the AlInGaAsP material, the high-refractive-index layer is embedded between the active layer and the waveguide layers on two sides, and the refractive index and the thickness change of the high-refractive-index layer are adjusted, so that on one hand, the fundamental mode limiting factor of the large optical cavity waveguide structure can be effectively improved, the limitation of the waveguide on carriers is enhanced, the mode gain of a high-order mode can be reduced, the threshold current of a large optical cavity device is further reduced, and the electro-optic conversion efficiency is improved; on the other hand, high-order mode lasing is inhibited, internal optical loss is reduced, the output power and efficiency of a fundamental mode are improved, and the beam quality of a fast axis is improved.
Drawings
Fig. 1 is a schematic diagram of a semiconductor laser structure of alingaas material provided by the present invention;
FIG. 2 is the refractive index and mode field distribution of a conventional 790nm large optical cavity waveguide structure semiconductor laser varying with the epitaxial direction;
FIG. 3 shows the refractive index and mode field distribution of a 790nm semiconductor laser with a large optical cavity waveguide structure embedded with a high refractive index layer as a function of the epitaxial direction;
the drawings are labeled as follows:
1-substrate, 2-buffer layer, 3-lower limiting layer, 4-lower waveguide layer, 5-lower embedding layer, 6-active layer, 7-upper embedding layer, 8-upper waveguide layer, 9-upper limiting layer and 10-ohmic contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that the indication of the orientation or the positional relationship is based on the orientation or the positional relationship shown in the drawings, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, or the orientation or the positional relationship which is usually understood by those skilled in the art, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, and is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, cannot be understood as limiting the present invention. Furthermore, the terms "first" and "second" are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be further noted that the terms "disposed" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases by those skilled in the art; the drawings in the embodiments are used for clearly and completely describing the technical scheme in the embodiments of the invention, and obviously, the described embodiments are a part of the embodiments of the invention, but not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Example 1
In this embodiment, a semiconductor laser structure is specifically disclosed, which aims to solve the problems of low fundamental mode confinement factor and large gain of high-order mode in the existing 790nm semiconductor laser with large optical cavity waveguide structure, as shown in fig. 1, the structure includes:
the substrate 1, the buffer layer 2, the lower limiting layer 3, the lower waveguide layer 4, the active layer 6, the upper waveguide layer 8, the upper limiting layer 9 and the ohmic contact layer 10 are respectively arranged from bottom to top, wherein high-refractive-index layers are respectively embedded between the lower waveguide layer 4 and the active layer 6 and between the active layer 6 and the upper waveguide layer 8, and the active layer 6 is also called as a quantum well. The advantages of this design are: the high-refractive-index layer is embedded between the active layer 6 and the waveguide layers on the two sides, and by adjusting the refractive index and the thickness change of the high-refractive-index layer, the fundamental mode limiting factor of the large optical cavity waveguide structure can be effectively improved, the mode gain of a high-order mode is reduced, the threshold current of a device is further reduced, the high-order mode lasing is inhibited, the output power and efficiency of the fundamental mode are improved, and the beam quality of a fast axis is improved. In practical application, the refractive index of the high refractive index layer is lower than that of the active layer 6, and the refractive index of the high refractive index layer is higher than that of the upper waveguide layer 8 and the lower waveguide layer 4 on two sides of the high refractive index layer, so that the optical field distribution in the waveguide can be effectively regulated and controlled; so that the optical field is concentrated to the quantum well region, the limiting factor of the fundamental mode is effectively increased, and the mode gain of the high-order mode is reduced.
Meanwhile, the band gap of the high refractive index layer is higher than that of the active layer 6, and the band gap of the high refractive index layer is lower than that of the upper and lower waveguide layers 8 and 4 on both sides thereof. Therefore, the limiting effect of the device on the current carrier is enhanced, the leakage of the current carrier is reduced, the electric-optical conversion efficiency of the laser is improved, and the threshold current of the device is reduced.
In practical application, it should be ensured that the lower waveguide layer 4 and the upper waveguide layer 8, and the lower confinement layer 3 and the upper confinement layer 9 all adopt asymmetric structures, so as to realize a larger refractive index difference in the P region, make optical field distribution biased to the N region, and reduce the loss of the P region cavity to light.
(ii) a high refractive index layer
The high refractive index layer being unintentionally doped In1-xGaxAsyP1-yThe material, and the thickness of the high refractive index layer is 10-100 nm; wherein, the value range of x is0.51～0.90, y has a value range of0.10～0.50. Due to In1-xGaxAsyP1-yThe material layer does not contain Al components, and the phenomenon that the cavity surface is easily damaged by catastrophic light because the cavity surface Al components are oxidized does not exist. In the present embodiment, the high refractive index layer, which is unintentionally doped In, is located between the upper waveguide layer 8 and the active layer 60.37Ga0.63As0.25P0.75The material is 50nm thick; a high refractive index layer between the lower waveguide layer 4 and the active layer 6, which is unintentionally doped In0.37Ga0.63As0.25P0.75The material and the thickness are 50 nm.
Since the high refractive index layer is In0.37Ga0.63As0.25P0.75Material with a thickness of 50nm, and In for the high refractive index layer0.37Ga0.63As0.25P0.75The material is lattice matched with the substrate 1 of GaAs material, can grow to a certain thickness without generating mismatch defects, and can obtain a high-quality active layer 6 and an upper waveguide layer 8.
Upper and lower waveguide layers
The upper waveguide layer 8 and the lower waveguide layer 4 are both unintentionally doped Ga0.51In0.49P material, the thickness of the upper waveguide layer 8 is 200-600 nm and the thickness of the lower waveguide layer 4 is 700-1300 nm. In this embodiment, the upper waveguide layer 8 is unintentionally doped Ga0.51In0.49P material with thickness of 450 nm; the lower waveguide layer 4 is unintentionally doped Ga0.51In0.49P material and thickness 1100 nm.
Third, upper and lower limiting layers
The upper limiting layer 9 is a P-type doped material with a doping concentration of 3X 1017cm-3～5×1018cm-3(ii) a The upper limiting layer 9 has a thickness of 500 to 1200 nm; wherein m is a value of0.1-0.6; in this embodiment, the upper confinement layer 9 is P-type doped material with a thickness of 800nm and a doping concentration of 1 × 1018cm-3。
The lower limiting layer 3 is made of N-type doped material with the doping concentration of 1 x 1017cm-3～3×1018cm-3(ii) a The thickness of the lower limiting layer 3 is 700-1500 nm; wherein m is a value of0.1-0.6; the lower limiting layer 3 is N-type doped material with thickness of 900nm and doping concentration of 1 × 1018cm-3。
Fourthly, the substrate
The substrate 1 is an N-type GaAs (100) single crystal wafer with an off-angle of 0-15 deg and a doping concentration of 2 × 1018cm-3～5×1018cm-3(ii) a In this embodiment, the substrate 1 is biased<111>N-type GaAs (100) single crystal wafer with crystal orientation of 5 DEG and doping concentration of 3 x 1018cm-3。
Fifthly, the buffer layer
The buffer layer 2 is N-type GaAs material with doping concentration of 1 × 1018cm-3～3×1018cm-3And the thickness of the buffer layer 2 is 200-600 nm. In this embodiment, buffer layer 2 is made of N-type GaAs material and has a thickness of 500nm and a doping concentration of 2 × 1018cm-3。
Active layer
The active layer 6 (i.e. quantum well) is made of tensile strained GaAsP material, the thickness is 5-15 nm, and the lasing wavelength is 785-794 nm. In this embodiment, the quantum well is a GaAsP material with a thickness of 9 nm.
(iv) an ohmic contact layer
The ohmic contact layer 10 is heavily doped P-type GaAs material with a doping concentration of 3 × 1019cm-3～1×1020cm-3And the thickness of the ohmic contact layer 10 is 150 to 250 nm. In this embodiment, the ohmic contact layer 10 is P-type GaAs material with a thickness of 200nm and a doping concentration of 1 × 1020cm-3。
As shown in fig. 2, the GaAsP/GaInP 790nm semiconductor laser with the conventional epitaxial structure has low light intensity and confinement factor of the fundamental mode in the active region, and has large mode gain of the high-order mode, which easily causes lasing of the high-order mode and low output power of the fundamental mode. In this embodiment, after the high refractive index layer is added, the mode intensity and the refractive index change along with the epitaxial direction as shown in fig. 3, the light intensity and the confinement factor of the fundamental mode in the active region are significantly improved, the mode gain of the high-order mode is reduced, and the method is very suitable for preparing a 790nm high-power semiconductor laser with high performance.
Example 2
In this embodiment, the high refractive index layer, the substrate 1, the buffer layer 2, the lower confinement layer 3, the lower waveguide layer 4, the active layer 6, the upper waveguide layer 8, the upper confinement layer 9, and the ohmic contact layer 10 are selected as follows:
(ii) a high refractive index layer
A high refractive index layer of unintentionally doped In between the upper waveguide layer 8 and the active layer 60.49Ga0.51As0.1P0.9The material is 10nm thick; a high refractive index layer between the lower waveguide layer 4 and the active layer 6, which is unintentionally doped In0.49Ga0.51As0.1P0.9The material and the thickness are 10 nm. Due to In0.49Ga0.51As0.1P0.9The material layer does not contain Al components, and the phenomenon that the cavity surface is easily damaged by catastrophic light because the cavity surface Al components are oxidized does not exist;
in is used as the high refractive index layer0.49Ga0.51As0.1P0.9The material is lattice matched with the substrate 1 of GaAs material, can grow to a certain thickness without generating mismatch defects, and can obtain a high-quality active layer 6 and an upper waveguide layer 8.
Upper and lower waveguide layers
In this embodiment, the upper waveguide layer 8 is unintentionally doped Ga0.51In0.49P material with thickness of 200 nm; the lower waveguide layer 4 is unintentionally doped Ga0.51In0.49P material and thickness of 700 nm.
Third, upper and lower limiting layers
In this embodiment, the upper confinement layer 9 is P-type doped material with a thickness of 500nm and a doping concentration of 3 × 1017cm-3(ii) a The lower limiting layer 3 is N-type doped material with a thickness of 700nm and a doping concentration of 1 × 1017cm-3。
Fourthly, the substrate
In this embodiment, the substrate 1 is biased<111>N-type GaAs (100) single crystal wafer with crystal orientation of 1 degree and doping concentration of 2 × 1018cm-3。
Fifthly, the buffer layer
In this embodiment, buffer layer 2 is made of N-type GaAs material and has a thickness of 200nm and a doping concentration of 1 × 1018cm-3。
Active layer
In the present embodiment, the quantum well is GaAsP material with a thickness of 5nm and a lasing wavelength of 785 nm.
(iv) an ohmic contact layer
In this embodiment, the ohmic contact layer 10 is P-type GaAs material with a thickness of 150nm and a doping concentration of 3 × 1019cm-3。
Example 3
In this embodiment, the high refractive index layer, the substrate 1, the buffer layer 2, the lower confinement layer 3, the lower waveguide layer 4, the active layer 6, the upper waveguide layer 8, the upper confinement layer 9, and the ohmic contact layer 10 are selected as follows:
(ii) a high refractive index layer
A high refractive index layer of unintentionally doped In between the upper waveguide layer 8 and the active layer 60.1Ga0.9As0.5P0.5The material is 100nm thick; a high refractive index layer between the lower waveguide layer 4 and the active layer 6, which is unintentionally doped In0.1Ga0.9As0.5P0.5Material and thickness of 100nAnd m is selected. Due to In0.1Ga0.9As0.5P0.5The material layer does not contain Al components, and the phenomenon that the cavity surface is easily damaged by catastrophic light because the cavity surface Al components are oxidized does not exist.
In is used as the high refractive index layer0.1Ga0.9As0.5P0.5The material is lattice matched with the substrate 1 of GaAs material, can grow to a certain thickness without generating mismatch defects, and can obtain a high-quality active layer 6 and an upper waveguide layer 8.
Upper and lower waveguide layers
In this embodiment, the upper waveguide layer 8 is unintentionally doped Ga0.51In0.49P material with thickness of 600 nm; the lower waveguide layer 4 is unintentionally doped Ga0.51In0.49P material and thickness 1300 nm.
Third, upper and lower limiting layers
In this embodiment, the upper confinement layer 9 is P-type doped material with a thickness of 1200nm and a doping concentration of 5 × 1018cm-3(ii) a The lower limiting layer 3 is N-type doped material with a thickness of 1500nm and a doping concentration of 3 × 1018cm-3。
Fourthly, the substrate
In this embodiment, the substrate 1 is biased<111>N-type GaAs (100) single crystal wafer with crystal orientation of 15 DEG and doping concentration of 5 x 1018cm-3。
Fifthly, the buffer layer
In this embodiment, buffer layer 2 is made of N-type GaAs material and has a thickness of 600nm and a doping concentration of 3 × 1018cm-3。
Active layer
In this embodiment, the active layer 6 (quantum well) is a GaAsP material with a thickness of 15nm and a lasing wavelength of 794 nm.
(iv) an ohmic contact layer
In this embodiment, the ohmic contact layer 10 is P-type GaAs material with a thickness of 250nm and a doping concentration of 1 × 1020cm-3。
The invention is not limited to the above alternative embodiments, and any other various forms of products can be obtained by anyone in the light of the present invention, but any changes in shape or structure thereof, which fall within the scope of the present invention as defined in the claims, fall within the scope of the present invention.

Claims (5)

1. A semiconductor laser structure, comprising:
the substrate, the buffer layer, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the upper limiting layer and the ohmic contact layer are respectively arranged from bottom to top, wherein high-refractive-index layers are respectively embedded between the lower waveguide layer and the active layer and between the active layer and the upper waveguide layer;
the high refractive index layer is unintentionally doped In1-xGaxAsyP1-yThe material, and the thickness of the high refractive index layer is 10-100 nm; wherein the value range of x is 0.51-0.90, and the value range of y is 0.10-0.50;
the refractive index of the high refractive index layer is lower than that of the active layer, and the refractive index of the high refractive index layer is higher than that of the upper waveguide layer and the lower waveguide layer on two sides of the high refractive index layer; the band gap of the high refractive index layer is higher than that of the active layer, and the band gap of the high refractive index layer is lower than that of the upper waveguide layer and the lower waveguide layer on two sides of the high refractive index layer;
the lower waveguide layer and the upper waveguide layer, and the lower limiting layer and the upper limiting layer are in asymmetric structures;
the upper waveguide layer and the lower waveguide layer are both unintentionally doped Ga0.51In0.49P material, wherein the thickness of the upper waveguide layer is 200-600 nm, and the thickness of the lower waveguide layer is 700-1300 nm;
the upper confinement layer is P-type doped (A1)mGa1-m)0.51In0.49P material with doping concentration of 3 × 1017cm-3～5×1018cm-3(ii) a The upper limiting layer has a thickness of 500-1200 nm; wherein the value of m is 0.1-0.6;
the lower confinement layer is N-doped (A1)mGa1-m)0.51In0.49P material with doping concentration of 1 × 1017cm-3～3×1018cm-3(ii) a The thickness of the lower limiting layer is 700-1500 nm; wherein the value of m is 0.1-0.6.
2. A semiconductor laser structure as claimed in claim 1 wherein the substrate is a single crystal wafer of N-type GaAs (100) with an off-angle of 0-15 ° and a doping concentration of 2 x 1018cm-3～5×1018cm-3。
3. A semiconductor laser structure as claimed in claim 1 wherein the buffer layer is of N-GaAs material with a doping concentration of 1 x 1018cm-3～3×1018cm-3And the thickness of the buffer layer is 200-600 nm.
4. The semiconductor laser structure of claim 1, wherein the active layer is a tensile strained GaAsP material with a thickness of 5-15 nm and a lasing wavelength of 785-794 nm.
5. A semiconductor laser structure as claimed in claim 1 wherein the ohmic contact layer is heavily doped P-GaAs material with a doping concentration of 3 x 1019cm-3～1×1020cm-3And the thickness of the ohmic contact layer is 150-250 nm.
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