CN108899761A - Asymmetric mode extends small divergence angle semiconductor laser - Google Patents
Asymmetric mode extends small divergence angle semiconductor laser Download PDFInfo
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- CN108899761A CN108899761A CN201810763094.6A CN201810763094A CN108899761A CN 108899761 A CN108899761 A CN 108899761A CN 201810763094 A CN201810763094 A CN 201810763094A CN 108899761 A CN108899761 A CN 108899761A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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Abstract
A kind of asymmetric mode extension small divergence angle semiconductor laser, including：Substrate；Buffer layer is formed in substrate；Mode expansion layer, is formed on buffer layer；Space layer is formed on mode expansion layer；N-type limiting layer, is formed on space layer；Lower waveguide layer is formed on N-type limiting layer；Active area is formed on lower waveguide layer；Upper ducting layer, is formed on active area；P-type limiting layer, is formed on ducting layer, different from the doping concentration for preparing material of the N-type limiting layer and thickness；Cap rock on first is formed on p-type limiting layer；Cap rock on second is formed on first on cap rock；Cap rock in third is formed on second on cap rock；And ohmic contact layer, it is formed in third on cap rock, of poor quality to alleviate laser output spot in the prior art by above-mentioned asymmetric mode extension small divergence angle semiconductor laser, coupling efficiency is low, and loss is big, the technical problems such as shaping difficulty.
Description
Technical field
This disclosure relates to which the small divergence angle of optoelectronic device technology field more particularly to a kind of extension of asymmetric mode is partly led
Body laser.
Background technique
Semiconductor laser is due to modulation small in size, light-weight, high-efficient, easy, service life length and integrability etc.
Plurality of advantages has been widely used in fields such as laser communication, optical storage, optical sensing, military weapons.Especially mesh
Preceding quantum-well semiconductor laser the most universal, has played big advantage on low threshold current, high-quantum efficiency.So
And the thickness very little (100nm or so) of traditional quantum-well semiconductor laser active area, due to going out light size less than lasing wave
It grows and generates diffraction effect, cause the semiconductor laser vertical far-field angle of divergence very big, according to diffraction limit theory, far field hair
The specific value for dissipating angle θ can be calculated by formula：θ=arcsin (1.22 λ/D) is partly leading for 1550m for emission wavelength
Body laser, the angle of divergence being generally vertical can achieve 40 °~60 °, and the angle of divergence of horizontal direction only has 20 °~30 °,
Causing emergent light spot is very asymmetric ellipse, for beam shaping, focuses and has with the coupling of optical fiber etc. huge
Influence.
Currently, improving the semiconductor laser vertical far-field angle of divergence mainly has following method：1) extremely narrow waveguiding structure,
2) large-optical-cavity or super large optical cavity structure, 3) low-refraction barrier structure, 4) mould spot transferring structure, 5) mode expansion layer structure.
Wherein, extremely narrow waveguiding structure causes to be easier to cause end face catastrophic optical damage to damage since light-emitting area is smaller, and output power is small；
And Large optical cavity structure or super large optical cavity structure are the common schemes of high power semiconductor lasers, are reducing the same of the angle of divergence
When, it is readily incorporated the lasing of higher order mode；Since the laser that excitation wavelength is 1550nm uses InP substrate, refractive index ratio
Also want low with the matched AlInAs limiting layer of substrate lattice, therefore low-refraction barrier structure can not achieve；And mould spot conversion knot
Structure needs multiple epitaxial step and corrodes active area, complex process, and since AlGaInAs material is oxidized easily, also refuses
Consider.
Mode expansion layer structure is inserted into the optical mode extension layer of high refractive index in covering, makes light field a part by active area
It itself limits, another part is limited by high index of refraction insert layer, near field light can be made effectively to be extended, to reduce
The vertical far-field angle of divergence.But meanwhile the introducing of mode expansion layer can reduce the restriction factor of active area, so as to cause threshold current
Increase, and the high-concentration dopant of thicker p-type ducting layer and insert layer will cause the series resistance and internal loss of laser
Increase, influences the performance of laser.
Disclosure
(1) technical problems to be solved
Present disclose provides a kind of asymmetric modes to extend small divergence angle semiconductor laser, is swashed in the prior art with alleviating
Light device output facula is of poor quality, and coupling efficiency is low, and loss is big, the technical problems such as shaping difficulty.
(2) technical solution
The disclosure provides a kind of asymmetric mode extension small divergence angle semiconductor laser, including：Substrate；Buffer layer, shape
At in substrate；Mode expansion layer, is formed on buffer layer；Space layer is formed on mode expansion layer；N-type limitation
Layer, is formed on space layer；Lower waveguide layer is formed on N-type limiting layer；Active area is formed on lower waveguide layer；Upper waveguide
Layer, is formed on active area；P-type limiting layer, is formed on ducting layer, the doping for preparing material with the N-type limiting layer
Concentration and thickness difference；Cap rock on first is formed on p-type limiting layer；Cap rock on second is formed on first on cap rock；
Cap rock in third is formed on second on cap rock；And ohmic contact layer, it is formed in third on cap rock.
In the embodiments of the present disclosure, the N-type limiting layer is N-type InAlAs material, and doping concentration is 1~5 × 1017cm-3, with a thickness of 100~200nm.
In the embodiments of the present disclosure, the p-type limiting layer is undoped InAlAs material, with a thickness of 40~100nm.
In the embodiments of the present disclosure, the mode expansion layer is N-type InGaAsP material, and the material band gap width is corresponding
Wavelength is 1000nm~1300nm, and doping concentration is 0.5~1 × 1018cm-3, with a thickness of 100~700nm.
In the embodiments of the present disclosure, the space layer is N-type InP material, and doping concentration is 3~7 × 1017cm-3, thickness
For 700~1300nm.
In the embodiments of the present disclosure, the active area is undoped AlGaInAs material, including Quantum Well and quantum potential
It builds, wherein the number of Quantum Well is 2~6, and using compressive strain Quantum Well, dependent variable is 0.8%~1.5%, with a thickness of 5~
7nm；The number of quantum potential barrier is 3~7, and using tensile strain quantum potential barrier, dependent variable is 4%~7%, with a thickness of 9~11nm.
In the embodiments of the present disclosure, on described first cap rock be p-type doping InP material, doping concentration is 0.5~1 ×
1018cm-3, with a thickness of 1000~2000nm.
In the embodiments of the present disclosure, on described second cap rock be p-type heavy doping InGaAsP material, material band gap is corresponding
Wavelength be 1300nm, doping concentration be 1~2 × 1018cm-3, with a thickness of 10~50nm.
In the embodiments of the present disclosure, InGaAsP material of the cap rock for p-type heavy doping, material band gap correspondence in the third
Wavelength be 1500nm, doping concentration be 1~2 × 1018cm-3, with a thickness of 10~50nm.
In the embodiments of the present disclosure, the lower waveguide layer and upper ducting layer are undoped AlGaInAs material, component
Gradual change, with a thickness of 70~130nm.
(3) beneficial effect
It can be seen from the above technical proposal that disclosure asymmetric mode extension small divergence angle semiconductor laser at least has
There are one of following beneficial effect or in which a part：
(1) extension for realizing Near-field optical field, reduces far-field divergence angle.
(2) Near-field optical field is distributed in n-type region as far as possible, reduces light loss.
(3) relatively low threshold current and relatively high output power.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that embodiment of the present disclosure asymmetric mode extends small divergence angle semiconductor laser.
Fig. 2 is the refractive index point that embodiment of the present disclosure asymmetric mode extends small divergence angle semiconductor laser epitaxial structure
Cloth and Near-field optical field distribution map.
【Embodiment of the present disclosure main element symbol description in attached drawing】
1- substrate；2- buffer layer；3- mode expansion layer；4- space layer；5-N type limiting layer；
6- lower waveguide layer；7- active area；The upper ducting layer of 8-；9-P type limiting layer；
Cap rock on 10- first；Cap rock on 11- second；Cap rock in 12- third；13- ohmic contact layer.
Specific embodiment
Present disclose provides a kind of asymmetric modes to extend small divergence angle semiconductor laser, using the side of mode expansion layer
Formula, so that light field a part is limited by laser active area, another part is limited by the mode expansion layer of N-type side, is realized
The extension of Near-field optical field, reduces far-field divergence angle, simultaneously as limiting layer and mode expansion layer are set using asymmetrical
Meter, so that Near-field optical field is distributed in n-type region as far as possible, reduces light loss, ensure that relatively low threshold current and phase
To higher output power, improve optical quality, realize small vertical far-field angle of divergence light output, be conducive to beam shaping,
Fiber coupling etc..
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Fig. 1 is the structural schematic diagram that the asymmetric mode extends small divergence angle semiconductor laser, as shown in Figure 1,
The asymmetric mode extends small divergence angle semiconductor laser, including：
Substrate 1；
Buffer layer 2 is formed on substrate 1；
Mode expansion layer 3 is formed on buffer layer 2；
Space layer 4 is formed on mode expansion layer 3；
N-type limiting layer 5 is formed on space layer 4；
Lower waveguide layer 6 is formed on N-type limiting layer 5；
Active area 7 is formed on lower waveguide layer 6；
Upper ducting layer 8, is formed on active area 7；
P-type limiting layer 9 is formed on ducting layer 8, the doping concentration and thickness for preparing material with the N-type limiting layer 5
Degree is different；
Cap rock 10 on first are formed on p-type limiting layer 9；
Cap rock 11 on second are formed on first on cap rock 10；
Cap rock 12 in third are formed on second on cap rock 11；And
Ohmic contact layer 13 is formed in third on cap rock 12；
The substrate 1 is N-type InP material, and S doping concentration is 2~8 × 1018cm-3, with a thickness of 350 ± 30 μm.The lining
Bottom 1 is conducive to reduce the series resistance of substrate and the note of electronics for carrying out the epitaxial growth of laser layers of material on it
Enter.
The buffer layer 2 is N-type InP material, and doping concentration is 0.5~1 × 1018cm-3, with a thickness of 500~700nm.Institute
Buffer layer 2 is stated for eliminating the influence of the defect of substrate 1 to other each layers of subsequent growth, forms the epitaxial surface of high quality；
The mode expansion layer 3 be N-type InGaAsP material, the corresponding wavelength of material band gap width be 1000nm~
1300nm, doping concentration are 0.5~1 × 1018cm-3, with a thickness of 100~700nm.The mode expansion layer 3 can effectively improve lid
The equivalent refractive index of layer, while playing the role of certain limitation light field, since the mode expansion layer 3 is far from active area, make
It obtains Near-field optical field to be expanded, to reduce the far-field divergence angle of laser.
The space layer 4 is N-type InP material, and doping concentration is 3~7 × 1017cm-3, with a thickness of 700~1300nm.
With the relationship of weak coupling between the thickness Assured Mode extension layer 3 and active area 7 of the space layer 4, so that mould
Formula extension layer 3 has an impact to Near-field optical field, but does not reduce limitation of the active area to light field, ensure that the same of active area restriction factor
When play the role of extend Near-field optical field.
The N-type limiting layer 5 is N-type InAlAs material, and doping concentration is 1~5 × 1017cm-3, with a thickness of 100~
200nm。
The N-type limiting layer 5 uses unsymmetric structure, is to reduce p type island region domain in order to which light field is extended to n-type region as far as possible
Optical field distribution, reduce light loss, while limiting carrier spread, reduce hole leakage current, reduce the threshold current of laser.
The lower waveguide layer 6 is undoped AlGaInAs material, component-gradient, with a thickness of 70~130nm.
The lower waveguide layer 6 mainly reinforces limitation of the active area to light field, improves the restriction factor of active area, the lower waveguide
Layer 6 can effectively reduce the threshold current of device using the material of Al and Ga component-gradient, improve beam quality, simultaneously because
6 optical field distribution of lower waveguide layer is stronger, the undoped loss that can effectively reduce light, improves efficiency and output power.
The active area 7 is undoped AlGaInAs material, and strain-compensated quantum well structure, main function is conduct
The active layer of laser, limiting carrier provide the gain of light, determine laser excitation wavelength.
The active area 7 includes Quantum Well and quantum potential barrier, and wherein the number of Quantum Well is 2~6, using compressive strain amount
Sub- trap, dependent variable is 0.8%~1.5%, with a thickness of 5~7nm；The number of quantum potential barrier is 3~7, using tensile strain quantum
Potential barrier, dependent variable is 4%~7%, with a thickness of 9~11nm.
The active area 7 uses strain-compensated quantum well structure, can effectively limiting carrier imitate with Carrier recombination is improved
Rate improves active area restriction factor and optical output power.
The upper ducting layer 8 is undoped AlGaInAs material, component-gradient, with a thickness of 70~130nm.
The lower waveguide layer 8 and upper ducting layer 6 use symmetrical structure, can reinforce limitation of the active area to light field, reduce device
The threshold current of part reduces the loss of light.
The p-type limiting layer 9 is undoped InAlAs material, with a thickness of 40~100nm.
The p-type limiting layer 9 can hinder the upward cap rock diffusion of conduction band electron, reduce electron leak electric current, improve transformation efficiency,
It is asymmetrical structure with N-type limiting layer 5,9 thickness of p-type limiting layer is smaller, and doping concentration is lower, so that p type island region domain
Light field reduces the internal loss of light, improves device power toward one sidesway of n-type region so that p type island region domain optical field distribution reduces.
Cap rock 10 is the InP material of p-type doping on described first, and doping concentration is 0.5~1 × 1018cm-3, with a thickness of
1000~2000nm.
The upper cap rock 10 can eliminate the stress between p-type limiting layer 9 and ohmic contact layer 13, realize transition, simultaneously
Play the role of refractive index in subsequent technique to limit.Its thickness and doping concentration distribution can optimize, low to obtain simultaneously
Thermal resistance and series resistance be it is optimal, improve the hot property of device.
Cap rock 11 is the InGaAsP material of p-type heavy doping on described second, and the corresponding wavelength of material band gap is 1300nm,
Doping concentration is 1~2 × 1018cm-3, with a thickness of 10~50nm.
Cap rock on described second is primarily to eliminate huge band rank between cap rock 10 and ohmic contact layer 13 on first
Difference, so that carrier moving is more smooth.
Cap rock 12 is the InGaAsP material of p-type heavy doping in the third, and the corresponding wavelength of material band gap is 1500nm,
Doping concentration is 1~2 × 1018cm-3, with a thickness of 10~50nm.
Cap rock effect is similar on cap rock and second in the third, further eliminates cap rock 10 on first and ohm connects below
The huge band scale of contact layer 13, so that carrier moving is more smooth.
Ohmic contact layer 13 is formed in third on cap rock 12；
The ohmic contact layer 13 is the InGaAs material of p-type heavy doping, and doping concentration is greater than 1 × 1019cm-3, with a thickness of
100~200nm.
The ohmic contact layer 13 can reduce series resistance using heavy doping, and good ohm may be implemented with metal and connect
Touching, improves the injection efficiency of electric current.
In the embodiments of the present disclosure, Fig. 2 is the folding that asymmetric mode extends small divergence angle semiconductor laser epitaxial structure
Rate distribution and Near-field optical field distribution map are penetrated, as shown in Fig. 2, most light field is limited by active area, the limitation of active area
There is no reducing, the threshold current of corresponding laser will not obviously increase the factor；Another part light field is rolled over by N-type side simultaneously
The relatively high mode expansion layer of rate is penetrated to be limited, so that the distribution of Near-field optical field is effectively extended, by laser optical
Far-field distribution be the Fourier transformation of near field distribution it is found that its far field vertical divergence angle will greatly reduce, realize subcircular
The output of hot spot improves the quality of output light.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the implementation for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it.
According to above description, those skilled in the art should extend small divergence angle semiconductor to disclosure asymmetric mode and swash
Light device has clear understanding.
In conclusion present disclose provides a kind of asymmetric modes to extend small divergence angle semiconductor laser, using mode
The mode of extension layer allows the active area of laser and mode expansion area to respectively obtain design, guarantees that laser effectively increases
While benefit and restriction factor, Near-field optical field is effectively extended, and while guaranteeing low threshold current, reduces far field diverging
The output of subcircular hot spot is realized at angle, in addition, since limiting layer and mode expansion layer use asymmetrical design, in single mode emission
While, so that light field is distributed in n-type region as far as possible, reduces the distribution of p type island region domain light field, can effectively reduce inside laser
Light loss improves the injection efficiency of carrier, improves optical output power.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Those skilled in the art will understand that can be carried out adaptively to the module in the equipment in embodiment
Change and they are arranged in one or more devices different from this embodiment.It can be the module or list in embodiment
Member or component are combined into a module or unit or component, and furthermore they can be divided into multiple submodule or subelement or
Sub-component.Other than such feature and/or at least some of process or unit exclude each other, it can use any
Combination is to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so disclosed
All process or units of what method or apparatus are combined.Unless expressly stated otherwise, this specification is (including adjoint power
Benefit require, abstract and attached drawing) disclosed in each feature can carry out generation with an alternative feature that provides the same, equivalent, or similar purpose
It replaces.Also, in the unit claims listing several devices, several in these devices can be by same hard
Part item embodies.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention：It is i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of asymmetric mode extends small divergence angle semiconductor laser, including：
Substrate (1)；
Buffer layer (2) is formed on substrate (1)；
Mode expansion layer (3) is formed on buffer layer (2)；
Space layer (4) is formed on mode expansion layer (3)；
N-type limiting layer (5) is formed on space layer (4)；
Lower waveguide layer (6) is formed on N-type limiting layer (5)；
Active area (7) is formed on lower waveguide layer (6)；
Upper ducting layer (8), is formed on active area (7)；
P-type limiting layer (9) is formed on ducting layer (8), with the doping concentration for preparing material of the N-type limiting layer (5) and
Thickness is different；
Cap rock (10) on first are formed on p-type limiting layer (9)；
Cap rock (11) on second are formed on cap rock on first (10)；
Cap rock (12) in third are formed on cap rock on second (11)；And
Ohmic contact layer (13) is formed on cap rock in third (12).
2. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the N-type limitation
Layer (5) is N-type InAlAs material, and doping concentration is 1~5 × 1017cm-3, with a thickness of 100~200nm.
3. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the p-type limitation
Layer (9) is undoped InAlAs material, with a thickness of 40~100nm.
4. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the mode expansion
Layer (3) is N-type InGaAsP material, which is 1000nm~1300nm, doping concentration 0.5
~1 × 1018cm-3, with a thickness of 100~700nm.
5. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the space layer
It (4) is N-type InP material, doping concentration is 3~7 × 1017cm-3, with a thickness of 700~1300nm.
6. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the active area
It (7) is undoped AlGaInAs material, including Quantum Well and quantum potential barrier, wherein the number of Quantum Well is 2~6, is used
Compressive strain Quantum Well, dependent variable is 0.8%~1.5%, with a thickness of 5~7nm；The number of quantum potential barrier be 3~7, using
Strained quantum potential barrier, dependent variable is 4%~7%, with a thickness of 9~11nm.
7. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein first upper cover
Layer (10) is the InP material of p-type doping, and doping concentration is 0.5~1 × 1018cm-3, with a thickness of 1000~2000nm.
8. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein second upper cover
Layer (11) be p-type heavy doping InGaAsP material, the corresponding wavelength of material band gap be 1300nm, doping concentration be 1~2 ×
1018cm-3, with a thickness of 10~50nm.
9. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the third upper cover
Layer (12) be p-type heavy doping InGaAsP material, the corresponding wavelength of material band gap be 1500nm, doping concentration be 1~2 ×
1018cm-3, with a thickness of 10~50nm.
10. asymmetric mode according to claim 1 extends small divergence angle semiconductor laser, wherein the lower waveguide
Layer (6) and upper ducting layer (8) are undoped AlGaInAs material, component-gradient, with a thickness of 70~130nm.
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| CN117117635A (en) * | 2023-08-24 | 2023-11-24 | 武汉敏芯半导体股份有限公司 | Semiconductor optical amplifier and manufacturing method thereof |
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