CN112736644B - High-power VCSEL for vehicle-mounted radar and preparation method thereof - Google Patents
High-power VCSEL for vehicle-mounted radar and preparation method thereof Download PDFInfo
- Publication number
- CN112736644B CN112736644B CN202110337080.XA CN202110337080A CN112736644B CN 112736644 B CN112736644 B CN 112736644B CN 202110337080 A CN202110337080 A CN 202110337080A CN 112736644 B CN112736644 B CN 112736644B
- Authority
- CN
- China
- Prior art keywords
- layer
- alxgaas
- waveguide layer
- growth
- type heavily
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3205—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures with an active layer having a graded composition in the growth direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a high-power VCSEL for a vehicle-mounted radar and a preparation method thereof, wherein the high-power VCSEL comprises a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, five active layers, an oxide layer, a P-type DBR layer and a P-type GaAs layer which are sequentially grown along the growth direction; the total cavity length of the VCSEL is an integral multiple of 5 wavelengths. The invention realizes series connection of five active layers by using the tunneling junction, and improves the power in unit area and realizes higher power by designing the specific cavity length; meanwhile, by designing different barrier heights, the moving distance of a carrier is solved, the radiation recombination probability is improved, the population inversion is increased, and the output power is improved; by the design of growth thickness, gain is improved, standing wave field is improved, and output power is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a high-power VCSEL for a vehicle-mounted radar and a preparation method thereof.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) have been used in the field of data communications for more than twenty years, but there are many emerging application requirements that are driving the mass production and performance improvements of VCSELs. These applications include, but are not limited to, face recognition, gesture recognition, proximity sensing, high-resolution video display, automotive lidar, infrared illumination, infrared heating, atomic clocks.
The unijunction VCSEL is widely applied to a mobile phone end at present, can only realize the test of a distance of dozens of meters, is difficult to meet the long-distance test, and cannot meet the requirements of a vehicle-mounted radar. Therefore, it is important to develop a vertical cavity laser with higher power in the effective area to realize long-distance testing. Meanwhile, the problem of space hole burning in the unijunction is solved, and the requirement on the module is reduced.
The structure of the VCSEL which is widely used at present is shown in fig. 1, and the preparation method mainly comprises the following steps:
1) growing a GaAs buffer layer 2 on a GaAs substrate 1 at a growth temperature of 600-;
2) the growth temperature of the N-type DBR layer 3 grown on the GaAs buffer layer 2 is 650-800 ℃, the growth pressure is 50mbar, and the growth thickness is 4 mu m;
3) growing a first waveguide layer 4 on the N-type DBR layer 3 at the growth temperature of 650-800 ℃, the growth pressure of 50mbar and the growth thickness of 50 nm;
4) an active layer 5 grows on the first waveguide layer 4, the growth temperature is 650-;
5) growing a second waveguide layer 6 on the active layer 5 at the growth temperature of 650-;
6) growing an oxide layer 7 on the second waveguide layer 6 at the growth temperature of 650-;
7) growing a P-type DBR layer 8 on the oxide layer 7, wherein the growth temperature is 650-;
8) and growing a P-type GaAs layer 9 (0 < x < 0.5) on the grown P-type DBR layer 8 at the growth temperature of 600-800 ℃, the growth pressure of 50mbar and the growth thickness of 0-50 nm.
The VCSEL prepared by the technical method is used for the vehicle-mounted radar and has the following defects:
1. the power is low and only limited to a few watts, so that the high power in the same area is difficult to realize;
2. the gain is relatively low, and the current market requirements cannot be met;
3. the phenomenon of space hole burning is serious;
4. higher order modes are more difficult to control.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the high-power VCSEL for the vehicle-mounted radar and the preparation method thereof, which can effectively improve the power, improve the gain spectrum, improve the hole burning phenomenon, reduce the multimode and have longer transmission distance.
The invention realizes a high-power VCSEL for a vehicle-mounted radar by the following technical scheme, which comprises a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, an active layer, an oxidation layer, a P-type DBR layer and a P-type GaAs layer which are sequentially grown along the growth direction;
the total cavity length of the VCSEL is integral multiple of 5 wavelengths;
the active layer comprises a first active layer, a second active layer, a third active layer, a fourth active layer and a fifth active layer which are sequentially grown along the growth direction;
the first active layer comprises a first waveguide layer, a first quantum well, a first waveguide layer AlxGaAs, a first P-type heavily-doped AlxGaAs and a first N-type heavily-doped InGaP which are sequentially grown along the growth direction;
the second active layer comprises a second waveguide layer, a second quantum well, a second waveguide layer AlxGaAs, a second P-type heavily-doped AlxGaAs and a second N-type heavily-doped InGaP which are sequentially grown along the growth direction;
the third active layer comprises a third waveguide layer, a third quantum well, a third waveguide layer AlxGaAs, a third P-type heavily-doped AlxGaAs and a third N-type heavily-doped InxGaP which are sequentially grown along the growth direction;
the fourth active layer comprises a fourth waveguide layer, a fourth quantum well, a fourth waveguide layer AlxGaAs, a fourth P-type heavily-doped AlxGaAs and a fourth N-type heavily-doped InxGaP which are sequentially grown along the growth direction;
the fifth active layer comprises a fifth waveguide layer, a fifth quantum well and a fifth waveguide layer of AlxGaAs which are grown in sequence along the growth direction.
The technical scheme uses five active regions which are effectively connected in series, and can effectively improve the internal power of unit area.
Furthermore, in the above scheme, the growth thickness of the first waveguide layer, the second waveguide layer, the third waveguide layer, the fourth waveguide layer and the fifth waveguide layer is X, the growth temperature is 550-700 ℃, the growth pressure is 50-500mbar, the barrier layer is AlxGaAs, the growth thickness is 5-500nm, and the growth pressure is 50-500 mbar; the range of X is 5-500 nm.
Furthermore, in the scheme, the well layers of the first quantum well, the second quantum well, the third quantum well, the fourth quantum well and the fifth quantum well are InxGaAs, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the barrier layer is AlxGaAs, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar.
Furthermore, in the scheme, the growth temperature of the first waveguide layer AlxGaAs, the second waveguide layer AlxGaAs, the third waveguide layer AlxGaAs, the fourth waveguide layer AlxGaAs and the fifth waveguide layer AlxGaAs is 600-.
Furthermore, in the above scheme, the growth temperature of the first P-type heavily doped AlxGaAs, the second P-type heavily doped AlxGaAs, the third P-type heavily doped AlxGaAs and the fourth P-type heavily doped AlxGaAs is 600-800 ℃, the growth pressure is 50-500mbar, the V/III ratio is 10-500, the doping source is Mg or C, the concentration value is 5E19-2E20atoms/cm3。
Furthermore, in the above scheme, the growth temperature of the first N-type heavily doped InxGaP, the second N-type heavily doped InxGaP, the third N-type heavily doped InxGaP and the fourth N-type heavily doped InxGaP is 600-800 ℃, the growth pressure is 50-500mbar, the V/III ratio is 10-500, the doping source is Si or Te, and the concentration value is 1E18-5E19atoms/cm3。
Further, in the above scheme, x ranges of AlxGaAs and InxGaAs in the first waveguide layer, the second waveguide layer, the third waveguide layer, the fourth waveguide layer, the fifth waveguide layer, the first quantum well, the second quantum well, the third quantum well, the fourth quantum well, and the fifth quantum well are all 0.1< x < 0.3.
Further, in the above scheme, the x range of alxgas in the first waveguide layer alxgas is 0.1< x <0.7, and the x range of alxgas in the second waveguide layer alxgas, the third waveguide layer alxgas, the fourth waveguide layer alxgas and the fifth waveguide layer alxgas is 0.1< x < 0.6.
Further, in the above scheme, x of alxgas in the first P-type heavily doped alxgas, the second P-type heavily doped alxgas, the third P-type heavily doped alxgas, and the fourth P-type heavily doped alxgas is in a range of 0< x < 0.3.
Further, in the above scheme, the range of x of the InGaP in the first N-type heavily doped InGaP, the second N-type heavily doped InGaP, the third N-type heavily doped InGaP and the fourth N-type heavily doped InGaP is 0.4< x < 0.6.
The invention also provides a preparation method of the high-power VCSEL for the vehicle-mounted radar, which is characterized by comprising the following steps of:
s1, growing a GaAs buffer layer on a GaAs substrate;
s2, growing an N-type DBR layer on the GaAs buffer layer;
s3, sequentially growing a first active layer, a second active layer, a third active layer, a fourth active layer and a fifth active layer on the N-type DBR layer;
s4, growing an oxide layer on the fifth waveguide layer AlxGaAs of the fifth active layer;
s5, growing a P-type DBR layer on the oxide layer;
and S6, growing a P-type GaAs layer on the P-type DBR layer.
Compared with the prior art, the invention has the following beneficial effects:
1. the five active layers are effectively connected in series, so that the internal power of a unit area can be effectively improved;
2. the invention is designed aiming at the optical path of the cavity movement effectively, and can better improve the phenomenon of space hole burning;
3. the invention aims at the design of the tunneling junction, can reduce the internal loss and absorption;
4. according to the invention, through the design of growth thickness, the gain is improved, the standing wave field is improved, and the output power is improved;
5. according to the invention, through designing different barrier heights, the moving distance of a current carrier is solved, the radiation recombination probability is improved, the population inversion is increased, and the output power is improved;
6. the invention realizes the series connection of a plurality of active layers by meeting the requirement of a specific cavity length, thereby realizing higher power.
Drawings
FIG. 1 is a schematic diagram of a prior art VCSEL structure;
FIG. 2 is a schematic diagram of a VCSEL structure prepared by the method of the present invention;
figure 3 is a band diagram of a VCSEL of the present invention.
Number designations in the schematic drawings illustrate that:
1. a GaAs substrate; 2. a GaAs buffer layer; 3. an N-type DBR layer; 4. a first waveguide layer; 5. an active layer; 6. a second waveguide layer; 7. an oxide layer; 8. a P-type DBR layer; 9. a P-type GaAs layer; a1, a first waveguide layer; a2, a first quantum well; a3, first waveguide layer AlxGaAs; a4, first P-type heavily-doped AlxGaAs; a5, first N-type heavily doped InxGaP; b1, a second waveguide layer; b2, a second quantum well; b3, second waveguide layer AlxGaAs; b4, second P-type heavily doped AlxGaAs; b5, second N-type heavily doped InxGaP; c1, a third waveguide layer; c2, a third quantum well; c3, third waveguide layer AlxGaAs; c4, third P-type heavily doped AlxGaAs; c5, third N-type heavily doped InxGaP; d1, a fourth waveguide layer; d2, fourth quantum well; d3, fourth waveguiding layer AlxGaAs; d4, fourth P-type heavily doped AlxGaAs; d5, fourth N-type heavily doped InxGaP; e1, fifth waveguide layer; e2, fifth quantum well; e3, a fifth waveguide layer of AlxGaAs.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be understood that the terms "first", "second", etc. are used to define the components, and are used only for the convenience of distinguishing the corresponding components, and if not otherwise stated, the terms have no special meaning, and thus, should not be construed as limiting the scope of the present application.
In the description of the present application, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the case of not making a reverse description, these directional terms do not indicate and imply that the device or element being referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the scope of the present application; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Referring to fig. 1 to 2, it should be noted that the drawings provided in the present embodiment are only schematic illustrations of the basic idea of the present invention, and only show the components related to the present invention rather than drawn according to the number, shape and size of the components in actual implementation, the shape, number and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
FIG. 2 is a schematic structural diagram of a high-power VCSEL for a vehicle-mounted radar of the present invention, which includes a GaAs substrate 1, a GaAs buffer layer 2, an N-type DBR layer 3, a first waveguide layer a1, a first quantum well a2, a first waveguide layer AlxGaAs a3, a first P-type heavily doped AlxGaAs a4, a first N-type heavily doped InxGaP a5, a second waveguide layer b1, a second quantum well b2, a second waveguide layer AlxGaAs b3, a second P-type heavily doped AlxGaAs b4, a second N-type heavily doped InxGaP b5, and a third waveguide layer c1, a third quantum well c2, a third waveguide layer AlxGaAs c3, a third P-type heavily doped AlxGaAs c4, a third N-type heavily doped InxGaP c5, a fourth waveguide layer d1, a fourth quantum well d2, a fourth waveguide layer AlxGaAs d3, a fourth P-type heavily doped AlxGaAs d4, a fourth N-type heavily doped InxGaP d5, a fifth waveguide layer e1, a fifth quantum well e2, a fifth waveguide layer AlxGaAs e3, an oxide layer 7, a P-type DBR layer 8 and a P-type GaAs layer 9.
In the embodiment of the invention, a P-type AlxGa (1-x) As layer can be grown on the P-type DBR layer, wherein x is in a range of 0< x < 0.5.
The embodiment provides a preparation method of a high-power VCSEL for a vehicle-mounted radar, which comprises the following steps:
s1, growing a GaAs buffer layer on a GaAs substrate.
Specifically, the growth temperature of step S1 is 600-700 ℃, the growth pressure is 50mbar, and the growth thickness is 10-25 nm.
And S2, growing an N-type DBR layer on the GaAs buffer layer.
Specifically, the growth temperature of the step S2 is 650-800 ℃, the growth pressure is 50mbar, and the growth thickness is 4 mu m.
And S3, sequentially growing a first active layer, a second active layer, a third active layer, a fourth active layer and a fifth active layer on the N-type DBR layer.
Specifically, the growing of the first active layer of step S3 may include:
growing a first waveguide layer on the N-type DBR layer, wherein the growing thickness is X, the range of X is 5-500nm, the growing temperature is 550-700 ℃, and the growing pressure is 50-500 mbar; wherein the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-500nm, and the growth pressure is 50-500 mbar;
growing a first quantum well on the first waveguide layer, wherein the well is InxGaAs, x ranges from 0.1 to x <0.3, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, the growth pressure is 50-500mbar, the growth period is 3-5, and the total growth thickness is A1;
growing a first waveguide layer AlxGaAs on the first quantum well, wherein x ranges from 0.1 to x <0.7, the growth temperature is 600-800 ℃, the growth pressure is 50-500mbar, and the total growth thickness is A2;
growing a first P-type heavily doped AlxGaAs over the first waveguide layer AlxGaAs, wherein x is in the range of 0<x<0.3, the growth temperature is 600-3The total growth thickness is A3;
growing a first N-type heavily doped InxGaP on the first P-type heavily doped AlxGaAs, wherein x is in the range of 0.4<X<0.6, the growth temperature is 600-3And the total growth thickness is A4.
Specifically, the growing of the second active layer of step S3 may include:
growing a second waveguide layer on the first N-type heavily doped InxGaP at the growth temperature of 550-700 ℃ and the growth pressure of 50-500 mbar; wherein the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-500nm, the growth pressure is 50-500mbar, and the total growth thickness is B1;
growing a second quantum well on the second waveguide layer, wherein the well is InxGaAs, x is within the range of 0.1< x <0.3, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, the growth pressure is 50-500mbar, the growth period is 3-5, and the total growth thickness is B2;
growing a second waveguide layer AlxGaAs on the second quantum well, wherein x ranges from 0.1 to x <0.6, the growth temperature is 600-800 ℃, the growth pressure is 50-500mbar, and the total growth thickness is B3;
growing a second P-type heavily doped AlxGaAs over the second waveguide layer AlxGaAs, wherein x is in the range of 0<x<0.3, the growth temperature is 600-3The total growth thickness is B4;
growing a second N-type heavily doped InxGaP on the second P-type heavily doped AlxGaAs, wherein x is in the range of 0.4<X<0.6, the growth temperature is 600-The impurity source is Si or Te, and the concentration value is 1E18-5E19atoms/cm3And the total growth thickness is B5.
Specifically, the growing of the third active layer of step S3 may include:
growing a third waveguide layer on the second N-type heavily doped InxGaP at the growth temperature of 550-700 ℃ and the growth pressure of 50-500mbar, wherein the base is AlxGaAs, the range of x is 0.1< x <0.3, the growth thickness is 5-500nm, the growth pressure is 50-500mbar, and the total growth thickness is C1;
growing a third quantum well on the third waveguide layer, wherein the well is InxGaAs, x ranges from 0.1 to 0.3, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, the growth pressure is 50-500mbar, the growth period is 3-5, and the total growth thickness is C2;
growing a third waveguide layer AlxGaAs on the third quantum well, wherein x ranges from 0.1 to 0< x <0.6, the growth temperature is 600-800 ℃, the growth pressure is 50-500mbar, and the total growth thickness is C3;
growing a third P-type heavily-doped AlxGaAs on the third waveguide layer AlxGaAs, wherein x is in the range of 0<x<0.3, the growth temperature is 600-3The total growth thickness is C4;
growing a third N-type heavily doped InxGaP on the third P-type heavily doped AlxGaAs, wherein x is in the range of 0.4<X<0.6, the growth temperature is 600-3And the total growth thickness is C5.
Specifically, the growing of the fourth active layer of step S3 may include:
growing a fourth waveguide layer on the third N-type heavily doped InxGaP at the growth temperature of 550-700 ℃ and the growth pressure of 50-500mbar, wherein the base is AlxGaAs, the range of x is 0.1< x <0.3, the growth thickness is 5-500nm, the growth pressure is 50-500mbar, and the total growth thickness is D1;
growing a fourth quantum well on the fourth waveguide layer, wherein the well is InxGaAs, x ranges from 0.1 to 0.3, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, the growth pressure is 50-500mbar, the growth period is 3-5, and the total growth thickness is D2;
growing a fourth waveguide layer AlxGaAs on the fourth quantum well, wherein x ranges from 0.1 to x <0.6, the growth temperature is 600-800 ℃, the growth pressure is 50-500mbar, and the total growth thickness is D3;
growing a fourth P-type heavily doped AlxGaAs on the fourth waveguiding layer AlxGaAs, wherein x is in the range of 0<x<0.3, the growth temperature is 600-3The total growth thickness is D4;
growing a fourth N-type heavily doped InxGaP on the fourth P-type heavily doped AlxGaAs, wherein x is in the range of 0.4<X<0.6, the growth temperature is 600-3And the total growth thickness is D5.
Specifically, the growing of the fifth active layer of step S3 may include:
growing a fifth waveguide layer on the fourth N-type heavily doped InxGaP at the growth temperature of 550-;
growing a fifth quantum well on the fifth waveguide layer, wherein the well is InxGaAs, x is within the range of 0.1< x <0.3, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the base is AlxGaAs, wherein x is within the range of 0.1< x <0.3, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, the growth pressure is 50-500mbar, the growth period is 3-5, and the total growth thickness is E2;
and growing a fifth waveguide layer AlxGaAs on the fifth quantum well, wherein x is in a range of 0.1< x <0.6, the growth temperature is 600-800 ℃, the growth pressure is 50-500mbar, and the total growth thickness is E3.
The embodiment completes the growth of five active layers, effectively connects a plurality of active layers in series by designing the specific cavity length, improves the power in unit area and realizes higher power.
Preferably, when the cavity length satisfies X × N + a1 × N1+ E3 × N3= λ × N (N =1,2,3 …), the fundamental optical field can be realized mainly by satisfying the first pair of optical cavities, where λ is the wavelength and N, N1, N3 are the refractive indices corresponding to the Al component of each layer thickness.
Preferably, when the cavity length in the embodiment satisfies B1 × N5+ B2 × N6+ B3 × N7+ B4 × N8+ B5 × N9 =1/2 λ × N (N =1,2,3 …), the second pair of optical cavities is mainly satisfied, carrier maximization is achieved, the increase of the radiation recombination probability is facilitated, the gain is improved, the standing wave field is improved, and the output power is improved, wherein λ is the wavelength, and N5, N6, N7, N8, and N9 are the refractive indexes corresponding to the Al component of each layer thickness.
Preferably, in the embodiment, when the cavity length satisfies C1 × N5+ C2 × N6+ C3 × N7+ C4 × N8+ C5 × N9 =3/2 λ × N (N =1,2,3 …), it mainly satisfies the third pair of optical cavities, and implements the correction, increases the gain, improves the standing wave field, and increases the output power, where λ is the wavelength, and N5, N6, N7, N8, and N9 are the refractive indexes corresponding to the Al component in each layer thickness.
Preferably, in the embodiment, when the cavity length satisfies D1 × N5+ D2 × N6+ D3 × N7+ D4 × N8+ D5 × N9 =1/2 λ × N (N =1,2,3 …), the fourth pair of optical cavities is mainly satisfied, so that carrier maximization is achieved, the increase of the radiation recombination probability is facilitated, the gain is improved, the standing wave field is improved, and the output power is improved, wherein λ is the wavelength, and N5, N6, N7, N8, and N9 are the refractive indexes corresponding to the Al component of each layer thickness.
Preferably, in the embodiment, when the cavity length satisfies a2 × N2+ A3 × N3+ a4 × N8+ E1 × N5+ E2 × N6 =3/2 λ × N (N =1,2,3 …), the fifth pair of optical cavities is mainly satisfied, so that the correction is realized, the gain is increased, the standing wave field is improved, and the output power is increased, where λ is the wavelength, and N2, N3, N5, N6, and N8 are refractive indexes corresponding to Al components in each layer thickness.
Specifically, the total cavity length of the VCSEL in the present invention satisfies (λ +1/2 λ +3/2 λ +1/2 λ +3/2 λ) × N =5 λ × N (N =1,2,3 …), and the output power is significantly improved.
As can be seen from the band values in fig. 3, the position of the optical field in the active layer is changed by the refractive indexes of different band material thicknesses, so that the loss is reduced, and the non-radiative recombination is reduced, thereby achieving a lower catastrophe effect, increasing the differential gain, improving the carrier confinement, and increasing the output power.
And S4, growing an oxide layer on the fifth waveguide layer AlxGaAs of the fifth active layer.
Specifically, in step S4, an oxide layer is grown on the fifth waveguide layer, wherein the growth temperature is 650-.
And S5, growing a P-type DBR layer on the oxide layer.
Specifically, in the step S5, a P-type DBR layer grows on the oxide layer, the growth temperature is 650-800 ℃, the growth pressure is 50mbar, and the growth thickness is 3 mu m.
And S6, growing a P-type GaAs layer on the P-type DBR layer.
Specifically, in step S6, a P-type AlxGa (1-x) As (0 < x < 0.5) layer may be grown on the growth P-type DBR layer at a growth temperature of 600-; or growing a P-type GaAs layer on the P-type DBR layer at 600-800 deg.C under 50mbar and 0-50 nm.
In conclusion, the five active layers are connected in series by using the tunneling junctions, and the power in unit area is improved and higher power is realized by designing the specific cavity length; by designing different barrier heights, the moving distance of a carrier is solved, the radiation recombination probability is improved, the population inversion is increased, and the output power is improved; through the design of growth thickness, gain is improved, standing wave field is improved, output power is improved, high power is achieved overall, and the distance test of the vehicle-mounted radar of 100-200 meters can be met.
Finally, it should be emphasized that the above-described preferred embodiments of the present invention are merely examples of implementations, rather than limitations, and that many variations and modifications of the invention are possible to those skilled in the art, without departing from the spirit and scope of the invention.
Claims (10)
1. A high-power VCSEL for a vehicle-mounted radar is characterized by comprising a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, an active layer, an oxidation layer, a P-type DBR layer and a P-type GaAs layer which are sequentially grown along the growth direction;
the total cavity length of the VCSEL is integral multiple of 5 wavelengths;
the active layer comprises a first active layer, a second active layer, a third active layer, a fourth active layer and a fifth active layer which are sequentially grown along the growth direction;
the first active layer comprises a first waveguide layer, a first quantum well, a first waveguide layer AlxGaAs, a first P-type heavily-doped AlxGaAs and a first N-type heavily-doped InGaP which are sequentially grown along the growth direction;
the second active layer comprises a second waveguide layer, a second quantum well, a second waveguide layer AlxGaAs, a second P-type heavily-doped AlxGaAs and a second N-type heavily-doped InGaP which are sequentially grown along the growth direction;
the third active layer comprises a third waveguide layer, a third quantum well, a third waveguide layer AlxGaAs, a third P-type heavily-doped AlxGaAs and a third N-type heavily-doped InxGaP which are sequentially grown along the growth direction;
the fourth active layer comprises a fourth waveguide layer, a fourth quantum well, a fourth waveguide layer AlxGaAs, a fourth P-type heavily-doped AlxGaAs and a fourth N-type heavily-doped InxGaP which are sequentially grown along the growth direction;
the fifth active layer comprises a fifth waveguide layer, a fifth quantum well and a fifth waveguide layer of AlxGaAs which are grown in sequence along the growth direction.
2. The high-power VCSEL for the vehicle-mounted radar as claimed in claim 1, wherein the first waveguide layer, the second waveguide layer, the third waveguide layer, the fourth waveguide layer and the fifth waveguide layer are grown at a thickness X, a growth temperature of 550-700 ℃, a growth pressure of 50-500mbar, a barrier layer of AlxGaAs, a growth thickness of 5-500nm and a growth pressure of 50-500 mbar; the range of X is 5-500 nm.
3. The high-power VCSEL for the vehicle-mounted radar as claimed in claim 1, wherein well layers of the first quantum well, the second quantum well, the third quantum well, the fourth quantum well and the fifth quantum well are InxGaAs, the growth thickness is 5-10nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar; the barrier layer is AlxGaAs, the growth thickness is 5-15nm, the growth temperature is 550-700 ℃, and the growth pressure is 50-500 mbar.
4. The high-power VCSEL for the vehicle-mounted radar as claimed in claim 1, wherein the growth temperature of the first waveguide layer AlxGaAs, the second waveguide layer AlxGaAs, the third waveguide layer AlxGaAs, the fourth waveguide layer AlxGaAs and the fifth waveguide layer AlxGaAs is 600-800 ℃ and the growth pressure is 50-500 mbar.
5. The high-power VCSEL for the vehicle-mounted radar as claimed in claim 1, wherein the growth temperature of the first P-type heavily doped AlxGaAs, the second P-type heavily doped AlxGaAs, the third P-type heavily doped AlxGaAs and the fourth P-type heavily doped AlxGaAs is 600-800 ℃, the growth pressure is 50-500mbar, the V/III ratio is 10-500, the doping source is Mg or C, the concentration value is 5E19-2E20atoms/cm3。
6. The high power VCSEL of claim 1, wherein the growth temperature of the first N-type heavily doped InGaP, the second N-type heavily doped InGaP, the third N-type heavily doped InGaP and the fourth N-type heavily doped InGaP is 600-800 ℃, the growth pressure is 50-500mbar, the V/III ratio is 10-500, the doping source is Si or Te, the concentration value is 1E18-5E19atoms/cm3。
7. The high power VCSEL for vehicle radar of claim 1, wherein the x-ranges of AlxGaAs and InxGaAs in said first waveguide layer, second waveguide layer, third waveguide layer, fourth waveguide layer, fifth waveguide layer, first quantum well, second quantum well, third quantum well, fourth quantum well, and fifth quantum well are each 0.1< x < 0.3.
8. The high power VCSEL for the on-vehicle radar of claim 1, wherein an x range of AlxGaAs in the first waveguide layer AlxGaAs is 0.1< x <0.7, and an x range of AlxGaAs in the second waveguide layer AlxGaAs, the third waveguide layer AlxGaAs, the fourth waveguide layer AlxGaAs, and the fifth waveguide layer AlxGaAs is 0.1< x < 0.6.
9. The high-power VCSEL for the vehicle-mounted radar according to claim 1, wherein x range of AlxGaAs in the first P-type heavily doped AlxGaAs, the second P-type heavily doped AlxGaAs, the third P-type heavily doped AlxGaAs and the fourth P-type heavily doped AlxGaAs is 0< x < 0.3; the x range of the InGaP in the first N-type heavily doped InGaP, the second N-type heavily doped InGaP, the third N-type heavily doped InGaP and the fourth N-type heavily doped InGaP is 0.4< x < 0.6.
10. A method of manufacturing a high power VCSEL for vehicle radar according to any of claims 1-9, comprising the steps of:
s1, growing a GaAs buffer layer on a GaAs substrate;
s2, growing an N-type DBR layer on the GaAs buffer layer;
s3, sequentially growing a first active layer, a second active layer, a third active layer, a fourth active layer and a fifth active layer on the N-type DBR layer;
s4, growing an oxide layer on the fifth waveguide layer AlxGaAs of the fifth active layer;
s5, growing a P-type DBR layer on the oxide layer;
and S6, growing a P-type GaAs layer on the P-type DBR layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110337080.XA CN112736644B (en) | 2021-03-30 | 2021-03-30 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110337080.XA CN112736644B (en) | 2021-03-30 | 2021-03-30 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112736644A CN112736644A (en) | 2021-04-30 |
| CN112736644B true CN112736644B (en) | 2021-06-11 |
Family
ID=75595998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110337080.XA Active CN112736644B (en) | 2021-03-30 | 2021-03-30 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112736644B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229627A (en) * | 1990-08-20 | 1993-07-20 | Nec Corporation | Vertical cavity type vertical to surface transmission electrophotonic device |
| US20050129078A1 (en) * | 1998-12-21 | 2005-06-16 | Johnson Ralph H. | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
| US20110096803A1 (en) * | 2007-12-21 | 2011-04-28 | Finisar Corporation | Asymmetric dbr pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption |
| CN103078252A (en) * | 2013-01-25 | 2013-05-01 | 中国科学院半导体研究所 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
| CN103311805A (en) * | 2012-03-13 | 2013-09-18 | 株式会社理光 | Semiconductor stack and vertical cavity surface emitting laser |
| US20150171265A1 (en) * | 2012-07-03 | 2015-06-18 | Invensas Corporation | Quantum efficiency of multiple quantum wells |
| CN107147005A (en) * | 2017-05-31 | 2017-09-08 | 中国电子科技集团公司第十三研究所 | Asymmetric waveguides 980nm single-mode lasers |
| CN207602981U (en) * | 2017-11-13 | 2018-07-10 | 苏州长光华芯光电技术有限公司 | Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of |
| CN211789982U (en) * | 2020-05-24 | 2020-10-27 | 海南师范大学 | Compact multi-wavelength vertical cavity surface emitting semiconductor laser |
| CN112117641A (en) * | 2019-06-21 | 2020-12-22 | 山东华光光电子股份有限公司 | GaAs-based multi-junction red laser and preparation method thereof |
-
2021
- 2021-03-30 CN CN202110337080.XA patent/CN112736644B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229627A (en) * | 1990-08-20 | 1993-07-20 | Nec Corporation | Vertical cavity type vertical to surface transmission electrophotonic device |
| US20050129078A1 (en) * | 1998-12-21 | 2005-06-16 | Johnson Ralph H. | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
| US20110096803A1 (en) * | 2007-12-21 | 2011-04-28 | Finisar Corporation | Asymmetric dbr pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption |
| CN103311805A (en) * | 2012-03-13 | 2013-09-18 | 株式会社理光 | Semiconductor stack and vertical cavity surface emitting laser |
| US20150171265A1 (en) * | 2012-07-03 | 2015-06-18 | Invensas Corporation | Quantum efficiency of multiple quantum wells |
| CN103078252A (en) * | 2013-01-25 | 2013-05-01 | 中国科学院半导体研究所 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
| CN107147005A (en) * | 2017-05-31 | 2017-09-08 | 中国电子科技集团公司第十三研究所 | Asymmetric waveguides 980nm single-mode lasers |
| CN207602981U (en) * | 2017-11-13 | 2018-07-10 | 苏州长光华芯光电技术有限公司 | Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of |
| CN112117641A (en) * | 2019-06-21 | 2020-12-22 | 山东华光光电子股份有限公司 | GaAs-based multi-junction red laser and preparation method thereof |
| CN211789982U (en) * | 2020-05-24 | 2020-10-27 | 海南师范大学 | Compact multi-wavelength vertical cavity surface emitting semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112736644A (en) | 2021-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Meyer et al. | The interband cascade laser | |
| US20040066820A1 (en) | Versatile method and system for single mode VCSELs | |
| US11211773B2 (en) | Quantum cascade laser with monolithically integrated passive waveguide | |
| CN104577711A (en) | Vertical-cavity surface-emitting laser and manufacturing method thereof | |
| US20070008999A1 (en) | Broadened waveguide for interband cascade lasers | |
| KR102213661B1 (en) | Optical device including three coupled quantum well structure | |
| JP2004063657A (en) | Surface emitting laser, surface emitting laser array, light transmitting module, light transmitting/receiving module and optical communication system | |
| CN112072471B (en) | Monolithic integrated multi-wavelength quantum cascade laser array structure and manufacturing method thereof | |
| JP4497859B2 (en) | Surface emitting semiconductor laser device, optical transmission module, and optical transmission system | |
| CN108899761A (en) | Asymmetric mode extends small divergence angle semiconductor laser | |
| JP4069383B2 (en) | Surface emitting semiconductor laser and manufacturing method thereof | |
| CN111817129A (en) | VCSEL chip and manufacturing method thereof | |
| CN112736644B (en) | High-power VCSEL for vehicle-mounted radar and preparation method thereof | |
| CN113422295A (en) | Multi-junction distributed feedback semiconductor laser and preparation method thereof | |
| CN217740981U (en) | Human eye safe long wavelength VCSEL array chip for laser radar | |
| CN112397997B (en) | Semiconductor laser and manufacturing method thereof | |
| CN210838446U (en) | Wavelength tunable semiconductor laser | |
| CN114725772A (en) | EML chip structure with anti-reflection function and preparation method | |
| CN113851931A (en) | Single-mode high-power semiconductor laser based on sampling grating and preparation method thereof | |
| Kwak et al. | 940nm high-power laser diode based on AlGaAs/InGaAs GRIN-SCH and asymmetric structure | |
| CN113872047A (en) | Laser and preparation method thereof | |
| CN110718854A (en) | Wavelength tunable semiconductor laser | |
| CN112397998A (en) | Surface emitting laser and preparation method thereof | |
| CN100536266C (en) | Surface-emitting type semiconductor laser | |
| Koda et al. | High-differential-quantum-efficiency, long-wavelength vertical-cavity lasers using five-stage bipolar-cascade active regions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |