CN207602981U - Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of - Google Patents
Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of Download PDFInfo
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- CN207602981U CN207602981U CN201721503477.7U CN201721503477U CN207602981U CN 207602981 U CN207602981 U CN 207602981U CN 201721503477 U CN201721503477 U CN 201721503477U CN 207602981 U CN207602981 U CN 207602981U
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Abstract
The utility model discloses in a kind of accumulate multiple-active-region semiconductor bar chip of laser, including：Two active areas for stacking series connection, wherein, it is connected between upper active area (101) and lower active area (103) by tunnel knot (102), an isolation channel (2) for being parallel to light emission direction is etched between bar luminescence unit (1), isolation channel sequentially passes through active area (101), tunnel knot (102) and lower active area (103), wherein, the tunnel knot (102) is highly doped PN junction, P layers with N layer thickness about 5~10nm respectively, doping concentration is more than 1019cm 3, and tunnel junction interface must be precipitous, the doped source diffusion of i.e. tunnel knot P layers N layers of both sides is small.
Description
Technical field
The utility model belongs to accumulation multiple-active-region semiconductor bar chip of laser in a kind of.
Background technology
In semiconductor laser system, single bar of power is double, it is meant that laser unit area light emission luminance is double, defeated
Go out bar quantity used in equal-wattage and reduce half, laser system overall weight will be reduced with volume.Thus obtained height
Brightness, miniaturization, lighting Laser Diode System, will be more suitable for playing a role in Military and civil fields.
For single bar of laser product, lasing power is improved generally by way of increasing Injection Current, but increase
Bar efficiency of laser decline, material damage that Injection Current can be brought etc. leads to a bar unfavorable factor for laser fails, together
The wire voltage loss that Shi Zengjia Injection Currents are brought also influences laser system whole efficiency.
Utility model content
Technical problem to be solved in the utility model is that the technical program is related to a kind of semiconductor laser bar chip
Product more particularly to a kind of bar chip product that high laser power output is injected in low current.
It is as follows that the utility model solves the technical solution that above-mentioned technical problem is taken：
Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of, including：Two active areas for stacking series connection,
In, it is connected between upper active area (101) and lower active area (103) by tunnel knot (102), between bar luminescence unit (1)
Etch an isolation channel (2) for being parallel to light emission direction, isolation channel sequentially pass through active area (101), tunnel knot (102) and under
Active area (103), wherein, the tunnel knot (102) is highly doped PN junction, P layers with N layer thickness about 5~10nm respectively, doping
Concentration is more than 1019cm-3, and tunnel junction interface must be precipitous, i.e., the doped source diffusion of tunnel knot P layers N layers of both sides is small.
Preferably, GaAs substrates (106), SiO passivation layers (107), P faces metal (108) and SiO passivation layers are additionally provided with
Window (109), wherein, GaAs substrates (106) positioned at lowermost end, be provided with above more than on active area (101), lower active area
(103), tunnel knot (102) and SiO passivation layers (107), P faces metal (108) and SiO passivation layer windows (109).
Preferably, it is up lower active area N-shaped carrier barrier layer, lower active area N-shaped respectively from GaAs substrates (106)
Ducting layer, lower active area Quantum Well, lower active area p-type carrier barrier layer, lower active area p-type ducting layer, lower active area p-type carry
Flow N layers highly doped sub- barrier layer, tunnel knot, tunnel knot high-doped p layer, upper active area N-shaped carrier barrier layer, upper active area n
Type ducting layer, upper active area Quantum Well, upper active area p-type carrier barrier layer, upper active area p-type ducting layer, upper active area p-type
Carrier barrier layer, upper active area ohmic contact layer.
Preferably, the electrical pumping region of bar luminescence unit is limited by the window shape of the SiO passivation layers (107)
It is fixed, wherein, the P faces metal (108) at SiO passivation layer windows directly forms Ohmic contact with semi-conducting material, which is
For the electrical pumping region.
Preferably, carrier is injected from the window of SiO passivation layers, after recombination luminescence at upper active area Quantum Well, warp
The tunneling effect of tunnel knot is crossed, second of recombination luminescence can be carried out at lower active area Quantum Well, active light emissive is consequently formed
Area (104) and lower active light emitting area (105).
The technical program will be injected in low current, realize the high-power output of bar laser.In a bar laser
It in the design of device chip epitaxial structure, is connected, increased using directly two or more active areas are stacked in being grown in material epitaxy
The slope efficiency of laser.Theoretically, a carrier can be participated in twice or multiple photoreactivation, internal quantum efficiency will improve twice
Or more times, in the case of realizing same current injection, twice or more times of laser outputs.
Other features and advantages of the utility model will illustrate, also, in the following description partly from specification
In become apparent or understood by implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is realized and is obtained in the specification, claims and attached drawing write.
Description of the drawings
The utility model is described in detail below in conjunction with the accompanying drawings, so that the above-mentioned advantage of the utility model is more
Clearly.Wherein,
Fig. 1 is the structure diagram that multiple-active-region semiconductor bar chip of laser is accumulated in a kind of of the utility model；
Fig. 2 is the Facad structure signal that multiple-active-region semiconductor bar chip of laser is accumulated in a kind of of the utility model
Figure；
Fig. 3 is the diagrammatic cross-section that multiple-active-region semiconductor bar chip of laser is accumulated in a kind of of the utility model.
Specific embodiment
The embodiment of the utility model is described in detail below with reference to accompanying drawings and embodiments, whereby to the utility model
How applied technology method solves technical problem, and the realization process for reaching technique effect can fully understand and implement according to this.
If it should be noted that do not form conflict, each feature in each embodiment and each embodiment in the utility model
It can be combined with each other, the technical solution formed is within the protection scope of the utility model.
As described in Fig. 1,2 and 3, multiple-active-region semiconductor bar chip of laser is accumulated in a kind of, including：Two stackings
The active area of series connection, wherein, it is connected between upper active area (101) and lower active area (103) by tunnel knot (102), in a bar item
Between luminescence unit (1) etch an isolation channel (2) for being parallel to light emission direction, isolation channel sequentially pass through active area (101),
Tunnel knot (102) and lower active area (103), wherein, the tunnel knot (102) is highly doped PN junction, and P layers are divided with N layer thickness
Not about 5~10nm, doping concentration are more than 1019cm-3, and tunnel junction interface must be precipitous, i.e. tunnel knot P layers of N layers of both sides are mixed
Miscellaneous source diffusion is small.
Preferably, GaAs substrates (106), SiO passivation layers (107), P faces metal (108) and SiO passivation layers are additionally provided with
Window (109), wherein, GaAs substrates (106) positioned at lowermost end, be provided with above more than on active area (101), lower active area
(103), tunnel knot (102) and SiO passivation layers (107), P faces metal (108) and SiO passivation layer windows (109).
Preferably, it is up lower active area N-shaped carrier barrier layer, lower active area N-shaped respectively from GaAs substrates (106)
Ducting layer, lower active area Quantum Well, lower active area p-type carrier barrier layer, lower active area p-type ducting layer, lower active area p-type carry
Flow N layers highly doped sub- barrier layer, tunnel knot, tunnel knot high-doped p layer, upper active area N-shaped carrier barrier layer, upper active area n
Type ducting layer, upper active area Quantum Well, upper active area p-type carrier barrier layer, upper active area p-type ducting layer, upper active area p-type
Carrier barrier layer, upper active area ohmic contact layer.
Preferably, the electrical pumping region of bar luminescence unit is limited by the window shape of the SiO passivation layers (107)
It is fixed, wherein, the P faces metal (108) at SiO passivation layer windows directly forms Ohmic contact with semi-conducting material, which is
For the electrical pumping region.
Preferably, carrier is injected from the window of SiO passivation layers, after recombination luminescence at upper active area Quantum Well, warp
The tunneling effect of tunnel knot is crossed, second of recombination luminescence can be carried out at lower active area Quantum Well, active light emissive is consequently formed
Area (104) and lower active light emitting area (105).
Wherein, the technical program will be injected in low current, realize the high-power output of bar laser.In a bar item
In the design of chip of laser epitaxial structure, connected using directly two or more active areas are stacked in being grown in material epitaxy,
Increase the slope efficiency of laser.Theoretically, a carrier can be participated in twice or multiple photoreactivation, internal quantum efficiency will improve
Twice or more times, in the case of realizing same current injection, twice or more times of laser outputs.
Specifically, it is by an epitaxial growth that two active areas are vertical in bar epitaxial process of chip
It stacks, is connected between upper active area and lower active area by tunnel knot, obtain double active area laser epitaxial structures.Then bar
During the wafer flow of chip, an isolation channel for being parallel to light emission direction, isolation channel are etched between bar luminescence unit
Sequentially pass through active area, tunnel knot and lower active area.
In double active area epitaxial structures, tunnel knot is highly doped PN junction, P layers with N layer thickness about 5~10nm respectively, mix
Miscellaneous concentration is more than 1019cm-3, and tunnel junction interface must be precipitous, i.e., the doped source diffusion of tunnel knot P layers N layers of both sides is small.
Double active area bar epitaxial structures from GaAs substrates be successively up lower active area N-shaped carrier barrier layer, under have
Source region N-shaped ducting layer, lower active area Quantum Well, lower active area p-type carrier barrier layer, lower active area p-type ducting layer, under it is active
The highly doped N floor of area's p-type carrier barrier layer, tunnel knot, tunnel knot high-doped p layer, upper active area N-shaped carrier barrier layer, on
Active area N-shaped ducting layer, upper active area Quantum Well, upper active area p-type carrier barrier layer, upper active area p-type ducting layer, on have
Source region p-type carrier barrier layer, upper active area ohmic contact layer.
In bar chip structure, the electrical pumping region of bar luminescence unit is defined by the window shape of SiO passivation layers,
P faces metal directly forms Ohmic contact with semi-conducting material at SiO passivation layer windows, this region is luminescence unit electrical pumping area
Domain.
Double each luminescence unit operation principles of active area bar item are that carrier is injected from the window of SiO passivation layers, is had upper
At source region Quantum Well after recombination luminescence, the tunneling effect of process of passing through tunnel knot can carry out second again at lower active area Quantum Well
It closes and shines, i.e., a carrier carries out recombination luminescence twice, generates twice of light energy output.
It is packaged after the completion of bar chip manufacturing, using the quasi-continuous test of long pulse, it can be achieved that being less than in Injection Current
During 500A, the pulse peak power output more than 1000W.
Finally it should be noted that：The above descriptions are merely preferred embodiments of the present invention, is not limited to this
Utility model, although the utility model is described in detail with reference to the foregoing embodiments, for those skilled in the art
For, it can still modify to the technical solution recorded in foregoing embodiments or to which part technical characteristic
Carry out equivalent replacement.Within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on,
It should be included within the scope of protection of this utility model.
Claims (5)
1. multiple-active-region semiconductor bar chip of laser is accumulated in a kind of, which is characterized in that including：Two stack series connection
Active area, wherein, it is connected by tunnel knot (102) between upper active area (101) and lower active area (103), shone list in a bar item
An isolation channel (2) for being parallel to light emission direction is etched between first (1), isolation channel sequentially passes through active area (101), tunnel knot
(102) and lower active area (103), wherein, the tunnel knot (102) is highly doped PN junction, P layers with N layer thickness respectively about 5~
10nm, doping concentration are more than 1019cm-3, and tunnel junction interface must be precipitous, i.e., the doped source of tunnel knot P layers N layers of both sides expands
It dissipates small.
2. multiple-active-region semiconductor bar chip of laser is accumulated according to claim 1, which is characterized in that also set
GaAs substrates (106), SiO passivation layers (107), P faces metal (108) and SiO passivation layer windows (109) are equipped with, wherein, GaAs linings
Bottom (106) positioned at lowermost end, be provided with above more than on active area (101), lower active area (103), tunnel knot (102) and
SiO passivation layers (107), P faces metal (108) and SiO passivation layer windows (109).
3. multiple-active-region semiconductor bar chip of laser is accumulated according to claim 2, which is characterized in that from
GaAs substrates (106) are up lower active area N-shaped carrier barrier layer, lower active area N-shaped ducting layer, lower active area quantum respectively
Trap, lower active area p-type carrier barrier layer, lower active area p-type ducting layer, lower active area p-type carrier barrier layer, tunnel knot are high
N layers of doping, tunnel knot high-doped p layer, upper active area N-shaped carrier barrier layer, upper active area N-shaped ducting layer, upper active area amount
It is sub- trap, upper active area p-type carrier barrier layer, upper active area p-type ducting layer, upper active area p-type carrier barrier layer, upper active
Area's ohmic contact layer.
4. multiple-active-region semiconductor bar chip of laser is accumulated according to claim 2, which is characterized in that bar item
The electrical pumping region of luminescence unit is limited by the window shape of the SiO passivation layers (107), wherein, in SiO passivation layer windows
The P faces metal (108) at place directly forms Ohmic contact with semi-conducting material, which is the electrical pumping region.
5. multiple-active-region semiconductor bar chip of laser is accumulated according to claim 4, which is characterized in that current-carrying
Son is injected from the window of SiO passivation layers, and after recombination luminescence at upper active area Quantum Well, the tunneling effect of process of passing through tunnel knot can
Second of recombination luminescence is carried out at lower active area Quantum Well, active light emitting area (104) and lower active light emitting area is consequently formed
(105)。
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| CN201721503477.7U CN207602981U (en) | 2017-11-13 | 2017-11-13 | Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020047828A1 (en) * | 2018-09-07 | 2020-03-12 | 中国科学院半导体研究所 | Tunnel junction photonic crystal laser with narrow vertical far-field divergence angle |
| CN111900626A (en) * | 2020-07-15 | 2020-11-06 | 苏州长光华芯光电技术有限公司 | Double-active-area laser chip and preparation method thereof |
| CN112736644A (en) * | 2021-03-30 | 2021-04-30 | 南昌凯捷半导体科技有限公司 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
| CN113381296A (en) * | 2021-05-21 | 2021-09-10 | 深圳瑞波光电子有限公司 | High-power pulse semiconductor laser single tube and semiconductor laser bar |
| CN114374146A (en) * | 2020-10-15 | 2022-04-19 | 山东华光光电子股份有限公司 | GaAs-based 915nm/976nm high-power dual-wavelength laser epitaxial wafer and preparation method thereof |
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2017
- 2017-11-13 CN CN201721503477.7U patent/CN207602981U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020047828A1 (en) * | 2018-09-07 | 2020-03-12 | 中国科学院半导体研究所 | Tunnel junction photonic crystal laser with narrow vertical far-field divergence angle |
| CN111900626A (en) * | 2020-07-15 | 2020-11-06 | 苏州长光华芯光电技术有限公司 | Double-active-area laser chip and preparation method thereof |
| CN114374146A (en) * | 2020-10-15 | 2022-04-19 | 山东华光光电子股份有限公司 | GaAs-based 915nm/976nm high-power dual-wavelength laser epitaxial wafer and preparation method thereof |
| CN112736644A (en) * | 2021-03-30 | 2021-04-30 | 南昌凯捷半导体科技有限公司 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
| CN112736644B (en) * | 2021-03-30 | 2021-06-11 | 南昌凯捷半导体科技有限公司 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
| CN113381296A (en) * | 2021-05-21 | 2021-09-10 | 深圳瑞波光电子有限公司 | High-power pulse semiconductor laser single tube and semiconductor laser bar |
| CN113381296B (en) * | 2021-05-21 | 2023-12-26 | 深圳瑞波光电子有限公司 | High-power pulse semiconductor laser single tube and semiconductor laser bar |
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Address after: 215163 No.2 workshop-1-102, No.2 workshop-2-203, zone a, industrial square, science and Technology City, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 215163 No.2 factory building, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |