CN113381296A - High-power pulse semiconductor laser single tube and semiconductor laser bar - Google Patents
High-power pulse semiconductor laser single tube and semiconductor laser bar Download PDFInfo
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- CN113381296A CN113381296A CN202110556186.9A CN202110556186A CN113381296A CN 113381296 A CN113381296 A CN 113381296A CN 202110556186 A CN202110556186 A CN 202110556186A CN 113381296 A CN113381296 A CN 113381296A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 238000002955 isolation Methods 0.000 claims abstract description 61
- 238000002347 injection Methods 0.000 claims abstract description 32
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- 239000010410 layer Substances 0.000 claims description 80
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- 239000002184 metal Substances 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
Abstract
The application discloses high power pulse semiconductor laser single tube and semiconductor laser bar, this laser bar includes: the laser unit comprises an epitaxial layer, an insulating film, a current injection region and a second type ohmic contact electrode; the current injection region is arranged on the epitaxial layer, the second type ohmic contact electrode is arranged on the current injection region, the isolation grooves are arranged on two sides of the current injection region, and the insulating film covers the surfaces of other regions except the current injection region; the second-type ohmic contact electrode covers part of the isolation groove, so that the second-type ohmic contact electrode and the light-emitting surface of the corresponding high-power pulse semiconductor laser are separated by a preset distance in the region of the isolation groove. Through the mode, the risk that the laser fails due to the fact that the vicinity of the front light-emitting surface and the rear light-emitting surface of the semiconductor laser chip are broken down and burnt under the working conditions of short pulses and high voltage can be effectively reduced.
Description
Technical Field
The application relates to the technical field of semiconductor laser, in particular to a high-power pulse semiconductor laser single tube and a semiconductor laser bar.
Background
The laser radar can acquire information such as distance, speed and the like of a target or realize target imaging with high accuracy and high precision, and has an important role in the fields of surveying and mapping, navigation and the like; in order to obtain a target at a longer distance with higher precision, the laser radar requires a pulse laser chip with higher power and smaller near-field light spots, and generally adopts a low-resistance tunnel junction to connect a plurality of light-emitting units in series, which needs higher voltage for driving; and with the increasing power demand, the pulse width is narrower and narrower, the driving voltage is higher and higher, and the higher voltage makes the bottom or the side wall of the isolation groove near the front and back light-emitting surfaces of the laser chip easily broken down, so that the laser chip is damaged.
Disclosure of Invention
The application provides a high power pulse semiconductor laser single tube and semiconductor laser bar can prevent that near the play plain noodles of semiconductor laser core from being punctured, reduces semiconductor laser's inefficacy risk.
In order to solve the technical problem, the technical scheme adopted by the application is as follows: provided is a high-power pulsed semiconductor laser bar, including: the laser unit comprises an epitaxial layer, an insulating film, a current injection region and a second type ohmic contact electrode, wherein the current injection region is arranged on the epitaxial layer, the second type ohmic contact electrode is arranged on the current injection region, the insulating film covers the surface of the region except the current injection region, and the epitaxial layer comprises at least one light-emitting unit and a second type ohmic contact layer arranged on the light-emitting unit; the isolation grooves are arranged at two sides of the current injection region; the second-type ohmic contact electrode covers part of the isolation groove, so that the second-type ohmic contact electrode and the light-emitting surface of the corresponding high-power pulse semiconductor laser are separated by a preset distance in the region of the isolation groove.
In order to solve the above technical problem, another technical solution adopted by the present application is: the single tube of the high-power pulse semiconductor laser is obtained by cleaving a high-power pulse semiconductor laser bar, and the high-power pulse semiconductor laser bar is the high-power pulse semiconductor laser bar in the technical scheme.
Through the scheme, the beneficial effects of the application are that: the second type ohmic contact electrode is not arranged in the isolation groove area near the light emitting surface, when the laser works under the conditions of narrow pulse and high voltage, the failure caused by the breakdown of the isolation grooves near the front light emitting surface and the rear light emitting surface due to overhigh voltage can be prevented, and the production reliability of the laser is favorably improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
fig. 1 is a schematic structural diagram of an embodiment of a high power pulsed semiconductor laser bar provided by the present application;
FIG. 2 is a schematic top view of a current injection region and an insulating film provided herein;
FIG. 3 is a schematic illustration of a stack of bars of a high power pulsed semiconductor laser provided herein in the BB' direction;
FIG. 4 is a schematic illustration of a stack-up of high power pulsed semiconductor laser bars in the AA' direction as provided herein;
FIG. 5 is a schematic view of a stack of individual light emitting cells provided herein;
FIG. 6 is a schematic view of a stack of a plurality of light emitting cells provided herein;
fig. 7 is a schematic structural diagram of another embodiment of a high power pulsed semiconductor laser bar provided by the present application;
fig. 8 is a schematic structural diagram of yet another embodiment of a high power pulsed semiconductor laser bar provided herein;
fig. 9 is a schematic flow chart of an embodiment of a method for manufacturing a high-power pulsed semiconductor laser bar provided by the present application;
FIG. 10(a) is a schematic structural diagram corresponding to step 62 in the embodiment shown in FIG. 9;
FIG. 10(b) is a schematic structural diagram corresponding to step 63 in the embodiment shown in FIG. 9;
FIG. 10(c) is a schematic structural diagram corresponding to step 64 in the embodiment shown in FIG. 9;
FIG. 10(d) is a schematic diagram of the structure corresponding to step 65 in the embodiment shown in FIG. 9;
FIG. 10(e) is a schematic structural diagram corresponding to step 66 in the embodiment shown in FIG. 9;
fig. 10(f) is a schematic structural diagram corresponding to step 67 in the embodiment shown in fig. 9.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In order to solve the problems in the prior art, the second type ohmic contact electrode of the high-power pulse semiconductor laser is improved and designed, so that the second type ohmic contact electrode is far away from the front light-emitting surface and the rear light-emitting surface in the isolation groove area, and the problems that when the high-voltage working is carried out, the isolation groove bottom or the isolation groove side wall near the front light-emitting surface and the rear light-emitting surface of the high-power pulse semiconductor laser is broken down, and finally the high-power pulse semiconductor laser is out of work are solved fundamentally.
Referring to fig. 1 to 8, fig. 1 is a schematic structural diagram of an embodiment of a high-power pulsed semiconductor laser bar provided in the present application, where the high-power pulsed semiconductor laser bar includes: a first type substrate 10, a plurality of laser units 20, and an isolation trench 30.
The first type substrate 10 may be an N-type substrate, and is configured to carry a plurality of laser units 20 arranged at intervals, that is, the laser units 20 are arranged on the first type substrate 10, and the laser units 20 include an epitaxial layer 21 and a current injection region 22, that is, the current injection region 22 is arranged on the epitaxial layer 21 in a stacked manner; specifically, the laser units 20 are periodically arranged, the plurality of current injection regions 22 are distributed in an array, the width of the laser units 20 may be several tens of micrometers to several hundreds of micrometers, and the epitaxial layer 21 includes at least one light emitting unit 213 and a second-type ohmic contact layer 211 disposed on the light emitting unit 213.
The isolation trenches 30 are disposed on both sides of the current injection region 22, and the shape of the isolation trenches 30 may be designed according to the specific application, for example, the isolation trenches may be in the shape of an inverted trapezoid or other shapes, and is not limited to the inverted trapezoid shown in fig. 1.
The laser unit 20 further includes a second-type ohmic contact electrode 23 and an insulating film 24, the insulating film 24 is disposed in a region other than the current injection region 22, i.e., the insulating film 24 covers a surface of the region other than the current injection region 22, the second-type ohmic contact electrode 23 is disposed on the current injection region 22; specifically, as shown in fig. 2 to 4, in the BB' direction, the region where the isolation groove 30 is located is provided with the second-type ohmic contact electrode 23; in the direction of AA', the second-type ohmic contact electrode 23 is not disposed in the region where the isolation trench 30 is located, so that the vicinity of the front and rear light-emitting surfaces of the semiconductor laser core can be prevented from being broken down and burned under short-pulse and high-voltage working conditions, thereby causing the semiconductor laser to fail.
The second-type ohmic contact electrodes 23 corresponding to two adjacent high-power pulse laser units are not connected, and the second-type ohmic contact electrodes 23 only cover part of the isolation groove 30, so that the second-type ohmic contact electrodes 23 are separated from the isolation groove region between the light-emitting surfaces of the corresponding high-power pulse semiconductor lasers by a preset distance, that is, in the AA' direction shown in fig. 4, the second-type ohmic contact electrodes 23 are not disposed on the isolation groove 30, the extending direction of the first-type substrate 10 may be the arrangement direction of the high-power pulse semiconductor lasers, for example, the length direction of the first-type substrate 10, and the second-type ohmic contact electrodes 23 may be P-type ohmic contact electrodes.
Further, the second-type ohmic contact electrode 23 is only disposed in the region where the isolation trench 30 is located near the non-front and rear light-emitting surfaces of the high-power pulsed semiconductor laser, and the second-type ohmic contact electrode 23 may be formed through one process or multiple processes, and has a thickness of about several hundred nanometers to several micrometers.
Continuing to refer to fig. 1, the high power pulsed semiconductor laser bar further includes a first type ohmic contact electrode 40, the first type ohmic contact electrode 40 may be an N type ohmic contact electrode, the first type ohmic contact electrode 40 is disposed on a side of the first type substrate 10 away from the epitaxial layer 21, that is, the first type substrate 10 is disposed between the epitaxial layer 21 and the first type ohmic contact electrode 40.
When the high-power pulse semiconductor laser works with high-power pulses, the second-type ohmic contact electrodes 23 are not arranged on the bottoms/side walls of the isolation grooves 30 near the front and rear light-emitting surfaces, so that the high-power pulse semiconductor laser can bear higher voltage, the bottoms/side walls of the isolation grooves 30 near the front and rear light-emitting surfaces cannot be broken down, and the risk of damage to the high-power pulse semiconductor laser is effectively reduced.
In a specific embodiment, as shown in fig. 5 and fig. 6, the epitaxial layer 21 includes at least one light emitting unit 213 and a second type ohmic contact layer 211, each light emitting unit 213 includes a first type cap layer 2131, a first waveguide layer 2132, an active layer 2133, a second waveguide layer 2134 and a second type cap layer 2135, which are stacked, the first type cap layer 2131 is an N type cap layer, and the second type cap layer 2135 is a P type cap layer; it is understood that the number of the light emitting cells 213 in the epitaxial layer 21 may be single or plural, and the specific number may be set according to application requirements.
Further, as shown in fig. 6, the epitaxial layer 21 includes a plurality of light emitting cells 213 and tunnel junctions 214, two adjacent light emitting cells 213 are connected in series through the tunnel junctions 214 and are stacked on the first type substrate 10, and the second type ohmic contact electrode 23 is disposed on the second type cap layer 2135 of the light emitting cell 213 closest to the surface of the epitaxial layer 21; specifically, the number of the plurality of light emitting units 213 may be 2, 3, 4, or 5, etc.
The depth of the isolation trench 30 can be designed according to the specific application requirement, and for example, the epitaxial layer 21 includes one light emitting unit 213, as shown in fig. 7, the bottom of the isolation trench 30 can be located at or below the surface of the first capping layer 2131 contacting the first waveguide layer 2132, that is, the depth of the isolation trench 30 can exceed the first waveguide layer 2132 in the light emitting unit 213 closest to the first substrate 10 to reach the first capping layer 2131; or as shown in fig. 8, the bottom of the isolation groove 30 may be located at a surface of the first type substrate 10 contacting the first type cap layer 2131, that is, the depth of the isolation groove 30 may exceed the first type cap layer 2131 in the light emitting cell 213 closest to the first type substrate 10 to reach the first type substrate 10.
With continued reference to fig. 8, at least a part of the surface of the isolation trench 30 is provided with an insulating film 24, specifically, the insulating film 24 is provided in a region other than the current injection region 22, the insulating film 24 completely covers the isolation trench 30, and the current injection region 22 is provided on the insulating film 24 between two adjacent isolation trenches 30; the insulating film 24 may be a single-layer dielectric film or a multi-layer dielectric film, the insulating film 24 may be formed by one deposition or a plurality of depositions, and the thickness of the insulating film 24 in the region of the isolation trench 30 is about several tens of nanometers to several micrometers.
The high-power pulse semiconductor laser bar provided by the embodiment can be applied to semiconductor lasers and bars which work under narrow-pulse high voltage, can be widely applied to the fields of laser ranging, laser radar or medical treatment and the like, and can solve the problem that the bottom of an isolation groove or the side wall of the isolation groove near a front light-emitting surface and a rear light-emitting surface is broken down when the conventional high-power narrow-pulse semiconductor laser works at high voltage, so that the semiconductor laser is prevented from failing.
Referring to fig. 9 to 10(a) -10 (f), fig. 9 is a schematic flowchart illustrating an embodiment of a method for manufacturing a high power pulsed semiconductor laser bar, the method includes:
step 61: a first type substrate is provided.
The first type substrate 10 may be an N-type substrate, which is made of a semiconductor material.
Step 62: an epitaxial layer is formed on a first type substrate.
As shown in fig. 10(a), an epitaxial layer (not shown) is epitaxially grown on a first-type substrate 10, and the epitaxial layer includes one or more light-emitting units 213 and a second-type ohmic contact layer 211, which are stacked, and two adjacent light-emitting units 213 may be connected in series in the thickness direction of the high-power pulsed semiconductor laser bar through a low-resistance tunnel junction 214; specifically, the light-emitting unit 213 includes a first cap layer 2131, a first waveguide layer 2132, an active layer 2133, a second waveguide layer 2134, and a second cap layer 2135, which are stacked; it is to be understood that the number of the light emitting units 213 is not limited to two as shown in fig. 10(a), and may be specifically set according to application requirements.
And step 63: the epitaxial layer is etched to form isolation trenches.
As shown in fig. 10(b), taking one light emitting unit 213 as an example, the epitaxial layer may be etched by wet chemical etching or dry etching, so as to obtain a plurality of spaced isolation trenches 30.
Step 64: an insulating film is formed on the surfaces of the epitaxial layer and the isolation trench.
As shown in fig. 10(c), a dielectric film or dielectric films may be deposited on the surfaces of the epitaxial layers and the isolation trenches 30 by a physical method such as evaporation plating or sputtering plating, or by a chemical vapor deposition method to form the insulating film 24.
Step 65: and forming a current injection region on the surface of the epitaxial layer.
As shown in fig. 10(d), a current injection region 22 may be formed on the surface of the epitaxial layer between two adjacent isolation trenches 30 by using a chemical etching method or a dry etching method.
And step 66: and forming a second-type ohmic contact electrode on the surface of the current injection region and the insulating film.
As shown in fig. 10(e), the second-type ohmic contact electrode 23 may be deposited on the surfaces of the current injection region 22 and the insulating film 24 by an evaporation coating or a sputtering coating; specifically, the second-type ohmic contact electrode 23 is not disposed in the region where the isolation trench 30 is located near the front and rear light emitting surfaces of the high power pulsed semiconductor laser, for example, the second-type ohmic contact electrode 23 is not disposed at the bottom or the sidewall of the isolation trench 30 near the front and rear light emitting surfaces, and the second-type ohmic contact electrode 23 is disposed in the region where the isolation trench 30 is located near the non-front and rear light emitting surfaces of the high power pulsed semiconductor laser.
Step 67: and forming a metal layer on the second-type ohmic contact electrode.
As shown in fig. 10(f), a thicker metal layer is formed on the surface of the second type ohmic contact electrode 23 by electroplating, evaporation or sputtering, so as to form a metal layer 25, thereby ensuring that the bottom metal electrode of the isolation trench 30 is not burned out due to too much current.
When the high-power pulse semiconductor laser bar provided by the embodiment works with high-power pulses, the second-type ohmic contact electrode positioned on the side wall of the isolation groove can bear larger pulse current and cannot be burnt; and because the bottom and the side wall of the isolation groove near the front and rear end faces (namely the front and rear light-emitting faces) are not provided with the second-type ohmic contact electrodes, the high-power pulse semiconductor laser can bear higher voltage, and the bottom and the side wall of the isolation groove near the front and rear light-emitting faces cannot be punctured, so that failure caused by puncturing can be avoided, and the high-power pulse semiconductor laser can normally work.
In addition, this application still provides a high power pulse semiconductor laser unit monotube, and this monotube obtains for carrying out the cleavage to high power pulse semiconductor laser unit bar, and high power pulse semiconductor laser unit bar is the high power pulse semiconductor laser unit bar in above-mentioned embodiment.
To sum up, the application provides a high power pulse semiconductor laser single tube and bar, and this semiconductor laser bar includes: the LED light-emitting device comprises a first-type substrate and an epitaxial layer arranged on the first-type substrate, wherein the epitaxial layer comprises at least one light-emitting unit and a second-type ohmic contact layer, each light-emitting unit comprises a first-type cap layer, a first waveguide layer, an active layer, a second waveguide layer and a second-type cap layer, and when the number of the light-emitting units is multiple, two adjacent light-emitting units can be connected in series through a tunnel junction; the surface of the semiconductor laser is provided with an isolation groove, and the depth of the isolation groove reaches the surface of the first type substrate or reaches the first type cap layer of one light-emitting unit closest to the first type substrate. During manufacturing, the bar can be firstly deposited with an insulating film on the surface of the epitaxial layer provided with the isolation grooves, and a current injection region is formed on the insulating film on the surface of the epitaxial layer between the isolation grooves; then depositing a second type ohmic contact electrode on the insulating film and the current injection area, wherein the second type ohmic contact electrode is not arranged in the isolation groove area near the front light-emitting surface and the rear light-emitting surface of the semiconductor laser; and then a thicker metal layer is manufactured on the surface of the second type ohmic contact electrode. When the laser works under the narrow-pulse high-voltage condition, the situation that the vicinity of the front light-emitting surface and the rear light-emitting surface of the high-power semiconductor laser are broken down due to overhigh voltage can be prevented, the effect of preventing the high-power semiconductor laser from being out of work due to burnout of the isolation groove can be achieved, and the reliability of a product is improved.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings, or which are directly or indirectly applied to other related technical fields, are intended to be included within the scope of the present application.
Claims (9)
1. A high power pulsed semiconductor laser bar, comprising:
a first type substrate;
the laser unit comprises an epitaxial layer, an insulating film, a current injection region and a second-type ohmic contact electrode, wherein the current injection region is arranged on the epitaxial layer, the second-type ohmic contact electrode is arranged on the current injection region, the insulating film covers the surface of the region except the current injection region, and the epitaxial layer comprises at least one light-emitting unit and a second-type ohmic contact layer arranged on the light-emitting unit;
the isolation grooves are arranged on two sides of the current injection region;
the second type ohmic contact electrode covers part of the isolation groove, so that a preset distance is reserved between the second type ohmic contact electrode and the light emitting surface of the corresponding high-power pulse semiconductor laser in the isolation groove region.
2. The high power pulsed semiconductor laser bar of claim 1,
the light-emitting unit comprises a first type cap layer, a first waveguide layer, an active layer, a second waveguide layer and a second type cap layer which are arranged in a stacked mode.
3. The semiconductor laser bar of claim 2,
the epitaxial layer comprises a plurality of light-emitting units and tunnel junctions, and two adjacent light-emitting units are connected in series through the tunnel junctions.
4. The high power pulsed semiconductor laser bar of claim 2,
the isolation groove is in an inverted trapezoid shape, and the bottom of the isolation groove is located on or lower than the surface of the first type cap layer, which is in contact with the first waveguide layer, or the bottom of the isolation groove is located on the surface of the first type substrate, which is in contact with the first type cap layer.
5. The high power pulsed semiconductor laser bar of claim 1,
the insulating film is a single-layer dielectric film or a multi-layer dielectric film.
6. The high power pulsed semiconductor laser bar of claim 5,
the insulation film completely covers the isolation grooves, and the current injection region is arranged on the epitaxial layer between two adjacent isolation grooves.
7. The high power pulsed semiconductor laser bar of claim 1,
and the second type ohmic contact electrodes corresponding to the two adjacent semiconductor lasers are not connected.
8. The high power pulsed semiconductor laser bar of claim 1,
the semiconductor laser bar further comprises a metal layer, and the metal layer is arranged on the second type ohmic contact electrode.
9. A high-power pulse semiconductor laser single tube is characterized in that the high-power pulse semiconductor laser single tube is obtained by cleaving a high-power pulse semiconductor laser bar, and the high-power pulse semiconductor laser bar is the high-power pulse semiconductor laser bar according to any one of claims 1 to 8.
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| CN202110556186.9A CN113381296B (en) | 2021-05-21 | 2021-05-21 | High-power pulse semiconductor laser single tube and semiconductor laser bar |
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Cited By (1)
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| US20200335940A1 (en) * | 2019-04-22 | 2020-10-22 | Hilux Optoelectron & Epiwafer Technology Inc. | High-order bragg grating single-mode laser array |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023198225A1 (en) * | 2022-04-15 | 2023-10-19 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high power semiconductor device and preparation method therefor |
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