CN105633226A - Infrared light-emitting diode with double junctions - Google Patents
Infrared light-emitting diode with double junctions Download PDFInfo
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- CN105633226A CN105633226A CN201511035172.3A CN201511035172A CN105633226A CN 105633226 A CN105633226 A CN 105633226A CN 201511035172 A CN201511035172 A CN 201511035172A CN 105633226 A CN105633226 A CN 105633226A
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- 239000000463 material Substances 0.000 claims abstract description 23
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Abstract
The invention provides an infrared light-emitting diode with double junctions. Two multi-quantum wells are connected by a tunnel junction in series; and the tunnel junction is formed by connecting a heavily doped P-type Al<X>Ga<1-X>As material and a heavily doped N-type Al<X>Ga<1-X>As or heavily doped N-type InGaP material. Two light-emitting diodes are connected by the tunnel junction in series; and an upper active layer and a bottom active layer simultaneously emit light, so that the luminous intensity is relatively high; the luminous intensity which is more than 1.5 times that of a single-junction light-emitting diode can be obtained; different wavelengths can be compounded to reach the wavelength adjusting effect; and the infrared light-emitting diode with the double junctions, which is high in efficient and can compound light-emitting wavelengths is formed.
Description
Technical field
The invention belongs to LED technology field, especially relate to a kind of infrared light emitting diodes with binode.
Background technology
It is applied to the infrared light emitting diodes of security monitoring, Wearable device, infrared communication, infrared remote controller, sensor light source and night illumination. Generally use the InGaAs multi-quantum pit structure as active layer, the light emitting diode of more than emission wavelength 850nm, it is pass into electric current with single p-i-n junction to do electron-hole recombinations luminescence, forms the infrared light emitting diodes that high efficiency monochromaticity is excellent.
Summary of the invention
In view of this, it is contemplated that propose a kind of infrared light emitting diodes with binode, to overcome deficiency of the prior art, in this binode infrared light emitting diodes, its upper active layer and bottom active layer are simultaneously luminous so that luminous intensity is higher, it is possible to obtain luminous two knot more than the 1.5 times luminosity of pipe of unijunction type, and can compound different wave length, reach to adjust the effect of wavelength.
For reaching above-mentioned purpose, the technical scheme is that and be achieved in that:
A kind of infrared light emitting diodes with binode, with tunnel junctions two MQWs of series winding, described tunnel junctions is heavily doped P-type AlXGa1-XAs material and heavily doped N-type AlXGa1-XAs or heavily doped N-type InGaP material connect and form. Preferably, described MQW is constituted as barrier layer using InGaAs well layer and AlGaAsP; Described MQW logarithm is between 3 pairs to 25 pairs. The present invention uses Organometallic Vapor Phase epitaxy (OMVPE) to grow up.
Preferably, described heavily doped P-type AlXGa1-XAs material is the P type Al of doping CXGa1-XAs, wherein X is between 0%��35%, it is preferable that X is 10%; Concentration be 5E18��1E20 atom/centimetre, it is preferable that concentration be 5E19 atom/centimetre; Described heavily doped N-type AlXGa1-XAs material is the N-type Al of doping TeXGa1-XAs, wherein X is between 0%��35%, it is preferable that X is 10%, concentration be 5E18��1E20 atom/centimetre, it is preferable that concentration be 2E19 atom/centimetre.
Heavily doped P-type AlXGa1-XAs material is utilized to connect with heavily doped N-type AlXGa1-XAs material formation tunnel junctions, wherein x is between 0��35%, it is preferably 10%, when component x is more than 35%, potential barrier potential barrier can be caused to improve, the operation voltage making assembly and then improves, adjust this component ratio and can change the energy gap size of tunnel junctions layer, when energy gap is more big, the luminescence making bottom active layer is more penetrating readily through tunnel junctions layer, then can obtain higher brightness, in this tunnel junctions, electronics directly can penetrate PN junction potential barrier from N-type layer and enter P-type layer, thereby two light emitting diodes of series connection, its upper active layer and bottom active layer are simultaneously luminous, make luminous intensity higher, luminous two knot more than the 1.5 times luminosity of pipe of unijunction type can be obtained, and can compound different wave length, reach to adjust the effect of wavelength, form the binode infrared light emitting diodes of high efficiency and recombination luminescence wavelength.
Preferably, its chip includes N-type Ohmic electrode, N-type contact layer, upper N type window layer, upper N type cover layer, top quantum well layer, upper P type cover layer, tunnel junctions layer, bottom N-type cover layer, bottom quantum well layer, bottom P type the second cover layer, bottom P type the first cover layer, P type contact layer, metal bonding layer, Si substrate and P type Ohmic electrode from top to bottom successively.
Preferably, described Si substrate concentration be 8E17��3E18 atom/centimetre, it is preferable that concentration be 1.2E18 atom/centimetre; P type contact layer be doping C GaP, concentration be between 1E18��1E20 atom/centimetre, it is preferable that concentration be 5E19 atom/centimetre.
Preferably, bottom P type the first cover layer is the P type Al of doping CXGa1-XAs, wherein X is between 0%��35%, it is preferable that X is 5%, concentration be 5E17��3E18 atom/centimetre, it is preferable that concentration be 8E17 atom/centimetre; Bottom P type the second cover layer is the P type Al of doping CXGa1-XAs, wherein X is between 5%��40%, it is preferable that X is 35%, concentration be 8E17��6E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre.
Preferably, bottom quantum well layer InGaAs material, its thickness is 3��80nm, it is preferable that thickness is 8nm, and barrier layer is AlGaAsP, and its thickness is 5��90nm, it is preferable that thickness is 24nm; Bottom N-type cover layer is the Al of doping SiXGa1-XAs, wherein X is between 10%��45%, it is preferable that X is 35%, concentration be 5E17��2E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre.
Preferably, upper P type cover layer is the P type Al of doping CXGa1-XAs, wherein X is between 5%��40%, it is preferable that X is 35%, concentration be 8E17��6E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre; Top quantum well active layer, uses InGaAs material, and its thickness is 3��80nm, it is preferable that thickness is 8nm, and barrier layer is AlGaAsP, and its thickness is 5��90nm, it is preferable that thickness is 24nm.
Preferably, upper N type cover layer is the Al of doping SiXGa1-XAs, wherein X is between 10%��45%, it is preferable that X is 35%, concentration be 5E17��2E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre; Upper N type window layer is the Al of doping SiXGa1-XAs utilizes wet etch method alligatoring, and wherein X is between 0%��35%, it is preferable that X is 5%, concentration be 5E17��2E18 atom/centimetre, it is preferable that concentration be 7E17 atom/centimetre.
Preferably, N-type contact layer be doping Si GaAs, concentration be 5E17��6E18 atom/centimetre, it is preferable that concentration be 2E18 atom/centimetre.
Relative to prior art, a kind of infrared light emitting diodes with binode of the present invention, having the advantage that in the present invention uses InGaAs the light emitting diode of MQW with tunnel junctions series winding two, central tunnel junctions is to connect with heavily doped N-type material with heavily doped P-type material, become a heavily doped PN junction, and thickness must be relatively thin, effect to reach barrier penetrance produces, in this tunnel junctions, electronics directly can penetrate PN junction potential barrier from N-type layer and enter P-type layer, thereby two light emitting diodes of series connection, with tunnel junctions two light emitting diodes of series connection, its upper active layer and bottom active layer are simultaneously luminous, make luminous intensity higher, luminous two knot more than the 1.5 times luminosity of pipe of unijunction type can be obtained, and can compound different wave length, reach to adjust the effect of wavelength, form the binode infrared light emitting diodes of high efficiency and recombination luminescence wavelength.
Accompanying drawing explanation
The accompanying drawing constituting the part of the present invention is used for providing a further understanding of the present invention, and the schematic description and description of the present invention is used for explaining the present invention, is not intended that inappropriate limitation of the present invention. In the accompanying drawings:
Fig. 1 is the simple structure schematic diagram of the chip of the infrarede emitting diode described in the embodiment of the present invention;
Fig. 2 is the simple structure schematic diagram of the tunnel junctions layer described in the embodiment of the present invention.
101, P type Ohmic electrode; 102, Si substrate; 103, metal bonding layer; 104, P type contact layer; 105, bottom P type the first cover layer; 106, bottom P type the second cover layer; 107, bottom quantum well layer; 108, bottom N-type cover layer; 109, tunnel junctions layer; 110, upper P type cover layer; 111, top quantum well layer; 112, upper N type cover layer; 113, upper N type window layer; 114, N-type contact layer; 115, N-type Ohmic electrode; 109a, heavily doped P-type material; 109b, heavily doped N-type material.
Detailed description of the invention
It should be noted that when not conflicting, the embodiment in the present invention and the feature in embodiment can be mutually combined.
Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
Embodiment one
As shown in Figure 1, a kind of infrared light emitting diodes with binode, its chip includes N-type Ohmic electrode 115, N-type contact layer 114, upper N type window layer 113, upper N type cover layer 112, top quantum well layer 111, upper P type cover layer 110, tunnel junctions layer 109, bottom N-type cover layer 108, bottom quantum well layer 107, bottom P type the second cover layer 106, bottom P type the first cover layer 105, P type contact layer 104, metal bonding layer 103, Si substrate 102 and P type Ohmic electrode 101 from top to bottom successively.
Described Si substrate 102 concentration be 1.2E18 atom/centimetre; P type contact layer 104 be doping C GaP, concentration be 5E19 atom/centimetre.
Bottom P type the first cover layer 105 is the P type Al of doping CXGa1-XAs, X are 5%, concentration be 8E17 atom/centimetre; Bottom P type the second cover layer 106 is the P type Al of doping CXGa1-XAs, X are 35%, concentration be 1E18 atom/centimetre.
Bottom quantum well layer 107 InGaAs material, thickness is 8nm, and barrier layer is AlGaAsP, and thickness is 24nm; Bottom N-type cover layer 108 is the Al of doping SiXGa1-XAs, X are 35%, concentration be 1E18 atom/centimetre.
Upper P type cover layer 110 is the P type Al of doping CXGa1-XAs, X are 35%, concentration be 1E18 atom/centimetre; Top quantum well active layer 111, uses InGaAs material, and its thickness is 3��80nm, it is preferable that thickness is 8nm, and barrier layer is AlGaAsP, and its thickness is 5��90nm, it is preferable that thickness is 24nm.
Upper N type cover layer 112 is the Al of doping SiXGa1-XAs, X are 35%, concentration be 1E18 atom/centimetre; Upper N type window layer 113 is the Al of doping SiXGa1-XAs utilizes wet etch method alligatoring, and X is 5%, concentration be 7E17 atom/centimetre.
N-type contact layer 114 be doping Si GaAs, concentration be 2E18 atom/centimetre.
Embodiment two
With the N-type InGaP of embodiment one difference to be heavily doped N-type material 109b be doping Te, concentration be 2E19 atom/centimetre.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (10)
1. an infrared light emitting diodes with binode, it is characterised in that: with tunnel junctions two MQWs of series winding, described tunnel junctions is heavily doped P-type AlXGa1-XAs material and heavily doped N-type AlXGa1-XAs or heavily doped N-type InGaP material connect and form.
2. the infrared light emitting diodes with binode according to claim 1, it is characterised in that: described MQW is constituted as barrier layer using InGaAs well layer and AlGaAsP; Described MQW logarithm is between 3 pairs to 25 pairs.
3. the infrared light emitting diodes with binode according to claim 1 and 2, it is characterised in that: described heavily doped P-type AlXGa1-XAs material is the P type Al of doping CXGa1-XAs, wherein X is between 0%��35%, it is preferable that X is 10%; Concentration be 5E18��1E20 atom/centimetre, it is preferable that concentration be 5E19 atom/centimetre; Described heavily doped N-type AlXGa1-XAs material is the N-type Al of doping TeXGa1-XAs, wherein X is between 0%��35%, it is preferable that X is 10%, concentration be 5E18��1E20 atom/centimetre, it is preferable that concentration be 2E19 atom/centimetre.
4. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: its chip includes N-type Ohmic electrode, N-type contact layer, upper N type window layer, upper N type cover layer, top quantum well layer, upper P type cover layer, tunnel junctions layer, bottom N-type cover layer, bottom quantum well layer, bottom P type the second cover layer, bottom P type the first cover layer, P type contact layer, metal bonding layer, Si substrate and P type Ohmic electrode from top to bottom successively.
5. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: described Si substrate concentration be 8E17��3E18 atom/centimetre, it is preferable that concentration be 1.2E18 atom/centimetre; P type contact layer be doping C GaP, concentration be between 1E18��1E20 atom/centimetre, it is preferable that concentration be 5E19 atom/centimetre.
6. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: bottom P type the first cover layer is the P type Al of doping CXGa1-XAs, wherein X is between 0%��35%, it is preferable that X is 5%, concentration be 5E17��3E18 atom/centimetre, it is preferable that concentration be 8E17 atom/centimetre; Bottom P type the second cover layer is the P type Al of doping CXGa1-XAs, wherein X is between 5%��40%, it is preferable that X is 35%, concentration be 8E17��6E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre.
7. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: bottom quantum well layer InGaAs material, its thickness is 3��80nm, preferred thickness is 8nm, barrier layer is AlGaAsP, and its thickness is 5��90nm, it is preferable that thickness is 24nm; Bottom N-type cover layer is the Al of doping SiXGa1-XAs, wherein X is between 10%��45%, it is preferable that X is 35%, concentration be 5E17��2E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre.
8. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: upper P type cover layer is the P type Al of doping CXGa1-XAs, wherein X is between 5%��40%, it is preferable that X is 35%, concentration be 8E17��6E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre; Top quantum well active layer, uses InGaAs material, and its thickness is 3��80nm, it is preferable that thickness is 8nm, and barrier layer is AlGaAsP, and its thickness is 5��90nm, it is preferable that thickness is 24nm.
9. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: upper N type cover layer is the Al of doping SiXGa1-XAs, wherein X is between 10%��45%, it is preferable that X is 35%, concentration be 5E17��2E18 atom/centimetre, it is preferable that concentration be 1E18 atom/centimetre; Upper N type window layer is the Al of doping SiXGa1-XAs utilizes wet etch method alligatoring, and wherein X is between 0%��35%, it is preferable that X is 5%, concentration be 5E17��2E18 atom/centimetre, it is preferable that concentration be 7E17 atom/centimetre.
10. the infrared light emitting diodes with binode according to claim 3, it is characterised in that: N-type contact layer be doping Si GaAs, concentration be 5E17��6E18 atom/centimetre, it is preferable that concentration be 2E18 atom/centimetre.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201511035172.3A CN105633226A (en) | 2015-12-31 | 2015-12-31 | Infrared light-emitting diode with double junctions |
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| CN201511035172.3A CN105633226A (en) | 2015-12-31 | 2015-12-31 | Infrared light-emitting diode with double junctions |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870227A (en) * | 2016-06-12 | 2016-08-17 | 天津三安光电有限公司 | Infrared LED (Light-Emitting Diode) |
| CN108933186A (en) * | 2017-05-25 | 2018-12-04 | 昭和电工株式会社 | The manufacturing method of light emitting diode and tunnel junction layer |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN110137325A (en) * | 2019-04-15 | 2019-08-16 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN111629782A (en) * | 2018-01-26 | 2020-09-04 | 国际商业机器公司 | Multi-light source integrated in a neuroprobe for multi-wavelength activation |
| WO2021163924A1 (en) * | 2020-02-19 | 2021-08-26 | 天津三安光电有限公司 | Tunnel junction for multi-junction led, multi-junction led, and preparation method therefor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870227A (en) * | 2016-06-12 | 2016-08-17 | 天津三安光电有限公司 | Infrared LED (Light-Emitting Diode) |
| CN108933186A (en) * | 2017-05-25 | 2018-12-04 | 昭和电工株式会社 | The manufacturing method of light emitting diode and tunnel junction layer |
| CN111629782A (en) * | 2018-01-26 | 2020-09-04 | 国际商业机器公司 | Multi-light source integrated in a neuroprobe for multi-wavelength activation |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN110137325A (en) * | 2019-04-15 | 2019-08-16 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN110071210B (en) * | 2019-04-15 | 2020-10-23 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| WO2021163924A1 (en) * | 2020-02-19 | 2021-08-26 | 天津三安光电有限公司 | Tunnel junction for multi-junction led, multi-junction led, and preparation method therefor |
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