CN105789395B - High modulation speeds light emitting diode and its modulator approach and manufacturing method - Google Patents
High modulation speeds light emitting diode and its modulator approach and manufacturing method Download PDFInfo
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- CN105789395B CN105789395B CN201610273153.2A CN201610273153A CN105789395B CN 105789395 B CN105789395 B CN 105789395B CN 201610273153 A CN201610273153 A CN 201610273153A CN 105789395 B CN105789395 B CN 105789395B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The present invention provides a kind of high modulation speeds light emitting diode and its modulator approaches and manufacturing method, the PN junction interface of the light emitting diode includes a double quantum well structure, the double quantum well structure includes one first Quantum Well and one second Quantum Well, the band gap of first Quantum Well is more than the band gap of second Quantum Well, the first Quantum Well radiation signal light, second Quantum Well radiates fill-in light, by quantum tunneling effect, first Quantum Well and second Quantum Well intercouple.The light emitting diode of high modulation speeds of the present invention by carrier energy space dynamic process, realize the ultrafast injection of carrier and the ultrafast energy area for detaching participation signal light radiation, the time needed for the rising edge and failing edge of light emitting diode optical signal is reduced, and then improves the modulating speed of light emitting diode.
Description
Technical field
The present invention relates to a kind of light emitting diode and its modulator approaches and manufacturing method more particularly to a kind of high modulation speeds
Light emitting diode and its modulator approach and manufacturing method.
Background technology
Light emitting diode（LED）It is a kind of PN junction semiconductor photoelectric device.Its semi-conducting material used is usually
Iii-v, the binary or multi-element compounds semiconductor of II-VI group element.Its radiation spectrum is by PN junction compound semiconductor materials
Band gap determine, cover from ultraviolet, visible infrared band.
LED is a kind of spontaneous radiation photoelectric device, and luminous mechanism is to inject electronics by N areas, P areas injection hole, electronics-
Hole is compound in active area spontaneous radiation, sends out photon.
Electronics is referred to as carrier with hole in PN junction, and the inverse of spontaneous radiation recombination probability is exactly the spontaneous spoke of carrier
Penetrate recombination lifetime, i.e., carrier is by the compound average lifetime before knocking out that falls into oblivion.
If PN junction area carrier is a concentration of, the service life of carrier is, then the PN junction spontaneous radiation recombination luminescence
Power will be proportional to。
The concentration of carrier is proportional to the current density of injection PN junction.When current density height, then the concentration of carrier is high, spoke
Penetrate luminous power height.When current density is low, the concentration of carrier is low, and radiation luminous power is low.
When carrying out direct electrical modulation to LED, voltage is in cut-in voltageWith turning off voltageBetween switch, inject
Current density in PN junction also correspondingly existsWithBetween switch, radiation luminous power also correspondingly existWith
Between switch, so as to fulfill LED by the modulation of electric signal to optical signal.
Carrier concentration is not synchronous with the variation of current density in PN junction, has certain hysteresis effect, is lagged
Effect and carrier lifetimeRelated, relationship can use formulaIt represents, this hysteresis effect will limit PN
The highest modulating speed of knot.This means that LED modulation bandwidths just will be limited by the radiative recombination lifetime of carrier。
Since the radiative recombination lifetime of carrier is generally longer, this leads to generally only tens megahertzs of the modulation bandwidth of LED
Hereby, it is impossible to meet requirement of the optic communication to modulating speed.In principle, the spontaneous radiation recombination lifetime of carrier belongs to semiconductor material
The build-in attribute of material, shortening carrier radiative recombination lifetime are difficult.Therefore, the LED light source of high modulation speeds is realized, it must
It must use and be different from more than theoretical path.
Invention content
The purpose of the present invention is to provide the light emitting diode and its modulator approach and manufacturing method of a kind of high modulation speeds,
It is intended for solving the problems, such as that existing light emitting diode cannot meet requirement of the optic communication to modulating speed.
The invention is realized in this way：
The present invention provides a kind of high modulation speeds light emitting diode, which is characterized in that including：The PN of the light emitting diode
Junction area includes a double quantum well structure, and the double quantum well structure includes one first Quantum Well and one second Quantum Well, institute
State the first Quantum Well band gap be more than second Quantum Well band gap, the first Quantum Well radiation signal light, described second
Quantum Well radiates fill-in light, and by quantum tunneling effect, first Quantum Well and second Quantum Well intercouple.
Further, when first Quantum Well uses identical compound semiconductor with second Quantum Well, institute
The compound that is used with second Quantum Well of accounting for stating each element in the compound semiconductor of the first Quantum Well use is partly led
The accounting of each element is different in body.
Further, first Quantum Well and second Quantum Well are using InGaN semiconductors, first quantum
The accounting of In is the accounting less than In in second Quantum Well in trap.
Further, the accounting of In is 0.3 in the InGaN semiconductors of first Quantum Well, second Quantum Well
The accounting of In is 0.5 in InGaN semiconductors.
Further, the thickness of first Quantum Well and second Quantum Well is 0.003 micron, first amount
The spacing of sub- trap and second Quantum Well is 0.005 micron.
The present invention also provides a kind of modulator approaches of high modulation speeds light emitting diode as described above, it is characterised in that：
One signal source is set outside the light emitting diode, and the signal source output modulated signal carries out the light emitting diode straight
Electrical modulation is connect, the cut-in voltage of the modulated signal is controlled to be more than first Quantum Well and second Quantum Well normal work
Voltage controls the shutdown voltage of the modulated signal to be less than the normal working voltage of first Quantum Well, but more than described the
The normal working voltage of two Quantum Well, by described in switching realization of the modulated signal between cut-in voltage and shutdown voltage
Carrier concentration rapid increase and quick reduction at first Quantum Well, so as to fulfill the high speed tune of the light emitting diode
System.
The present invention also provides a kind of manufacturing methods of high modulation speeds light emitting diode as described above, it is characterised in that：
It is prepared using heteroepitaxial growth process, by the multi-element compounds half for regulating and controlling first Quantum Well and second Quantum Well
The component of conductor realizes that the band gap of first Quantum Well is more than the band gap of second Quantum Well, has difference so as to prepare
First Quantum Well and second Quantum Well of radiation energy.
The invention has the advantages that：
The light emitting diode of high modulation speeds of the present invention includes a double quantum well structure, the band gap of first Quantum Well
More than the band gap of second Quantum Well, so as in the dynamic process of energy space, realize the super of carrier by carrier
Fast injection and the ultrafast energy area for detaching participation signal light radiation, reduce rising edge and the decline of light emitting diode optical signal
Along the required time, and then improve the modulating speed of light emitting diode.
Description of the drawings
Fig. 1 is the double quantum well structure diagram of high modulation speeds light emitting diode of the present invention；
Fig. 2 is the carrier schematic diagram that high modulation speeds light emitting diode of the present invention participates in two kinds of energy photon radiation；
Fig. 3 is the radiation spectrum of high modulation speeds light emitting diode of the present invention；
Fig. 4 is under the input of 10ns pulse signals, common Quantum Well LED in high modulation speeds light emitting diode of the present invention with joining
With the dynamic process of spontaneous radiation hole concentration；
Fig. 5 is the waveform and contrast of common Quantum Well LED light output under different input pulse widths；
Fig. 6 be under different input pulse widths, the waveform of high modulation speeds light emitting diode light output of the present invention with it is right
Degree of ratio.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained all other without making creative work
Embodiment shall fall within the protection scope of the present invention.
Such as Fig. 1, the embodiment of the present invention provides a kind of high modulation speeds light emitting diode, the PN junction tool of the light emitting diode
There is an interface, the interface is the region of voltage drop in light emitting diode, and the interface includes a double quantum well structure, described
Double quantum well structure includes one first Quantum Well and one second Quantum Well, and the band gap of first Quantum Well is more than second amount
The band gap of sub- trap, the first Quantum Well radiation signal light, second Quantum Well radiate fill-in light, are imitated by quantum tunneling
Should, first Quantum Well and second Quantum Well intercouple.
High modulation speeds light emitting diode of the present invention uses iii-v InGaN compound semiconductors, and epitaxial layer structure is by upper
It is under：Contact electrode layer is GaN, 0.1 micron of thickness, doping concentration p-type；Extension layer is GaN, thickness
0.2 micron, doping concentration p-type；Barrier layer is InGaN (In:0.1), 0.005 micron of thickness, non-impurity-doped；The
Two Quantum Well are InGaN (In:0.5), 0.003 micron of thickness, non-impurity-doped；Barrier layer is InGaN (In:0.1), thickness 0.005
Micron, non-impurity-doped；First Quantum Well is InGaN (In:0.3), 0.003 micron of thickness, non-impurity-doped；Barrier layer is InGaN (In:
0.1), 0.005 micron of thickness, non-impurity-doped；Buffer layer is InGaN (In:0-0.1), 0.01 micron of thickness, non-impurity-doped；Extension layer
For GaN, 2 microns of thickness, doping concentration N-type；Contact electrode layer is GaN, 2 microns of thickness, doping concentration.Wherein, the spacing of first Quantum Well and second Quantum Well is 0.005 micron.In other embodiment
In, above-mentioned each parameter can be adjusted as the case may be.In in the InGaN compound semiconductors of first Quantum Well
Accounting is less than the accounting of In in the InGaN compound semiconductors of second Quantum Well, so as to fulfill first Quantum Well
Band gap is more than the band gap of second Quantum Well, so that the first Quantum Well radiation signal light, second Quantum Well
Radiate fill-in light.
High modulation speeds light emitting diode of the present invention sets a signal source in modulation outside the light emitting diode,
The signal source output modulated signal carries out direct electrical modulation to the light emitting diode, controls the unlatching electricity of the modulated signal
Pressure controls the shutdown voltage of the modulated signal more than first Quantum Well and the normal working voltage of second Quantum Well
Less than the normal working voltage of first Quantum Well, but more than the normal working voltage of second Quantum Well, by described
On switching of the modulated signal between cut-in voltage and shutdown voltage realizes that the carrier concentration at first Quantum Well is quick
It rises and quickly reduces, modulated so as to fulfill the high speed of the light emitting diode.
As shown in Fig. 2, the first Quantum Well radiated photons, the second Quantum Well radiated photons, wherein,, correspondingly, the carrier for participating in light radiation includes two parts.When voltage is in cut-in voltage, carrier quilt
Injection, then form the carrier concentration at corresponding first Quantum Well and the carrier concentration at the second Quantum Well.
When voltage is switched to shutdown voltage by cut-in voltage, shutdown voltage here is only turned off at first Quantum Well
Light radiation, and the light radiation at second Quantum Well is made to be still in opening, it can be with radiated photons.When extremely short
In, the carrier at second Quantum Well falls into oblivion and knocks out due to keeping spontaneous radiation, and the new carrier that injects will include two
Point：（1）Foreign current injects,（2）At first Quantum Well at carrier mobility to second Quantum Well.Due to described
Higher than the carrier at second Quantum Well, the carrier at first Quantum Well can move carrier energy at one Quantum Well
It moves at second Quantum Well, is a ultrafast process since the process is happened at energy space, this is equivalent to one greatly
Transient current injection.It is injected accordingly, with respect to the foreign current of limited size, the carrier at first Quantum Well disappears
Before consuming, it is believed that all radiation are come from the load at first Quantum Well by the light radiation at second Quantum Well
Stream.In this way, it can realize the quick reduction of the carrier concentration at first Quantum Well.
When voltage is switched to cut-in voltage again, in very short time, carrier at first Quantum Well is by source
In two parts：（1）Foreign current injects,（2）At second Quantum Well at carrier mobility to first Quantum Well.By
Potential Distributing is caused to change in external voltage, carrier at first Quantum Well by with lower potential, described second
Carrier at Quantum Well can be migrated to first Quantum Well, be one ultrafast since the process is happened at energy space
Process, this is equivalent to a great transient current injection.It injects, can recognize accordingly, with respect to the foreign current of limited size
The carrier come from second Quantum Well will be all radiated for the light radiation at first Quantum Well.Pass through the party
Method can realize the rapid increase of the carrier concentration at first Quantum Well.
To sum up, the variation of the carrier concentration at first Quantum Well be due to：Carrier is described in energy space
Migration between one Quantum Well and second Quantum Well, the time is extremely short, far smaller than the radiative recombination lifetime of carrier.Cause
This, carrier concentration is also no longer limited by the radiative recombination lifetime of carrier with the variation of modulation voltage, can be with by the method
Realize the high modulation speeds of light emitting diode.
The manufacturing method of high modulation speeds light emitting diode of the present invention is：Using with current general hetero-junctions Quantum Well LED
Prepared by identical heteroepitaxial growth process, in MOCVD techniques, by regulating and controlling first Quantum Well and second quantum
InGaN semiconductors component, the particularly wherein accounting of In realizes that the band gap of first Quantum Well is more than second amount
The band gap of sub- trap, so as to prepare first Quantum Well and second Quantum Well with different radiation energies.
As shown in figure 3, the oscillogram of the radiation spectrum for high modulation speeds light emitting diode of the present invention.
As shown in figure 4, under comparison 10ns square-wave pulse signal inputs, common Quantum Well LED and high modulation speeds of the present invention
The dynamic process of spontaneous radiation carrier concentration, the rising edge and failing edge of carrier concentration of the present invention are participated in light emitting diode
All greatly shorten.Transient state modulating characteristic is：Cut-in voltage, turn off voltage。
As shown in figure 5, to be respectively in modulating pulse width：Under the input of 10ns, 5ns, 1ns signal, common Quantum Well
LED exports the variation of photosignal waveform and contrast.
As shown in fig. 6, to be respectively in modulating pulse width：Under the input of 10ns, 5ns, 1ns signal, the present invention is to a high-profile
The variation of speed light emitting diode output photosignal waveform processed and contrast.
As seen from the above, under the requirement of certain signal contrast, high modulation speeds light emitting diode of the present invention has
Modulating speed more higher than common Quantum Well LED；When input signal is 1ns, the contrast of 5dB, common quantum can be still obtained
The contrast of trap LED is then less than 0.5dB.Therefore, high modulation speeds light emitting diode modulating speed height of the present invention and better performances.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention god.
Claims (5)
1. a kind of modulator approach of high modulation speeds light emitting diode, it is characterised in that：The PN junction interface of the light emitting diode
Comprising a double quantum well structure, the double quantum well structure include one first Quantum Well and one second Quantum Well, described first
The band gap of Quantum Well is more than the band gap of second Quantum Well, the first Quantum Well radiation signal light, second Quantum Well
Fill-in light is radiated, by quantum tunneling effect, first Quantum Well and second Quantum Well intercouple；
One signal source is set outside the light emitting diode, the signal source output modulated signal to the light emitting diode into
The direct electrical modulation of row, the cut-in voltage for controlling the modulated signal are normal more than first Quantum Well and second Quantum Well
Operating voltage controls the shutdown voltage of the modulated signal to be less than the normal working voltage of first Quantum Well, but more than institute
The normal working voltage of the second Quantum Well is stated, is realized by switching of the modulated signal between cut-in voltage and shutdown voltage
Carrier concentration rapid increase and quick reduction at first Quantum Well, so as to fulfill the high speed of the light emitting diode
Modulation.
2. the modulator approach of high modulation speeds light emitting diode as described in claim 1, it is characterised in that：When first amount
When sub- trap uses identical compound semiconductor with second Quantum Well, the compound semiconductor of the first Quantum Well use
The accounting of middle each element is different from the accounting of each element in the compound semiconductor that second Quantum Well uses.
3. the modulator approach of high modulation speeds light emitting diode as claimed in claim 2, it is characterised in that：First quantum
Trap and second Quantum Well are using InGaN semiconductors, and the accounting of In is less than second amount in first Quantum Well
The accounting of In in sub- trap.
4. the modulator approach of high modulation speeds light emitting diode as claimed in claim 3, it is characterised in that：First quantum
The accounting of In is 0.3 in the InGaN semiconductors of trap, and the accounting of In is 0.5 in the InGaN semiconductors of second Quantum Well.
5. the modulator approach of high modulation speeds light emitting diode as claimed in claim 3, it is characterised in that：First quantum
Trap and the thickness of second Quantum Well are 0.003 micron, and the spacing of first Quantum Well and second Quantum Well is
0.005 micron.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281945A (en) * | 2008-05-13 | 2008-10-08 | 华南师范大学 | GaN base LED epitaxial wafer capable of transmitting light with vary wavelength meanwhile and preparation method thereof |
| CN101540364A (en) * | 2009-04-23 | 2009-09-23 | 厦门大学 | Nitride luminescent device and production method thereof |
| CN102130246A (en) * | 2011-01-14 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Multiple quantum well (MQW) structure, light-emitting diode (LED) and LED package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281945A (en) * | 2008-05-13 | 2008-10-08 | 华南师范大学 | GaN base LED epitaxial wafer capable of transmitting light with vary wavelength meanwhile and preparation method thereof |
| CN101540364A (en) * | 2009-04-23 | 2009-09-23 | 厦门大学 | Nitride luminescent device and production method thereof |
| CN102130246A (en) * | 2011-01-14 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Multiple quantum well (MQW) structure, light-emitting diode (LED) and LED package |
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