JPS58197784A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS58197784A
JPS58197784A JP7937482A JP7937482A JPS58197784A JP S58197784 A JPS58197784 A JP S58197784A JP 7937482 A JP7937482 A JP 7937482A JP 7937482 A JP7937482 A JP 7937482A JP S58197784 A JPS58197784 A JP S58197784A
Authority
JP
Japan
Prior art keywords
layer
active layer
thickness
led
direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7937482A
Inventor
Kenichi Kasahara
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP7937482A priority Critical patent/JPS58197784A/en
Publication of JPS58197784A publication Critical patent/JPS58197784A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Abstract

PURPOSE:To produce LED made of InGaAsP with high efficiency and output by a method wherein an active layer with narrow forbiden band width is held by P- and N-layers successively changing the concentration of the active layer in the direction of layer thickness. CONSTITUTION:In a LED where N type In1-xGaxAs1-y active layer 32 is held by P-InP layer 33 and N-InP layer 31, the donor density of the active layer 32 is successively changed in the direction of layer thickness. When LED is supplied with forward bias voltage, if an active layer 12 is doped to increase donor density from a layer 11 to another layer 13 in a energy band diagram, the lower end of conduction band of active layer and the upper end of valency electron band are lowered in the direction of layer thickness generating an accelerating electric field for the electrons and hole injected into the active layer. Consequently the thickness of active layer almost equivalent to the conventional hole diffusion length may be increased producing LED made of InGaAsP with high efficiency and output as well as inconspicuous saturation characteristic.
JP7937482A 1982-05-12 1982-05-12 Light emitting diode Pending JPS58197784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7937482A JPS58197784A (en) 1982-05-12 1982-05-12 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7937482A JPS58197784A (en) 1982-05-12 1982-05-12 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS58197784A true JPS58197784A (en) 1983-11-17

Family

ID=13688091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7937482A Pending JPS58197784A (en) 1982-05-12 1982-05-12 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS58197784A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370580A (en) * 1986-09-12 1988-03-30 Nec Corp Light-emitting diode
US5045896A (en) * 1987-11-13 1991-09-03 Siemens Plessey Controls Limited Solid state light source for emitting light over a broad spectral band
JP2005057308A (en) * 2004-11-12 2005-03-03 Nichia Chem Ind Ltd Nitride semiconductor element
JP2007281257A (en) * 2006-04-07 2007-10-25 Toyoda Gosei Co Ltd Group iii nitride semiconductor light-emitting element
JP2008263196A (en) * 2007-04-09 2008-10-30 Shogen Koden Kofun Yugenkoshi Light-emitting element
USRE42008E1 (en) 1999-06-07 2010-12-28 Nichia Corporation Nitride semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370580A (en) * 1986-09-12 1988-03-30 Nec Corp Light-emitting diode
US5045896A (en) * 1987-11-13 1991-09-03 Siemens Plessey Controls Limited Solid state light source for emitting light over a broad spectral band
USRE45672E1 (en) 1999-06-07 2015-09-22 Nichia Corporation Nitride semiconductor device
USRE42008E1 (en) 1999-06-07 2010-12-28 Nichia Corporation Nitride semiconductor device
JP4622466B2 (en) * 2004-11-12 2011-02-02 日亜化学工業株式会社 Nitride semiconductor device
JP2005057308A (en) * 2004-11-12 2005-03-03 Nichia Chem Ind Ltd Nitride semiconductor element
JP2007281257A (en) * 2006-04-07 2007-10-25 Toyoda Gosei Co Ltd Group iii nitride semiconductor light-emitting element
US8076684B2 (en) 2006-04-07 2011-12-13 Toyoda Gosei Co., Ltd. Group III intride semiconductor light emitting element
JP2008263196A (en) * 2007-04-09 2008-10-30 Shogen Koden Kofun Yugenkoshi Light-emitting element

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