CN108233180A - A kind of 808nm semiconductor laser structures of AlGaInP structures - Google Patents
A kind of 808nm semiconductor laser structures of AlGaInP structures Download PDFInfo
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- CN108233180A CN108233180A CN201611193555.8A CN201611193555A CN108233180A CN 108233180 A CN108233180 A CN 108233180A CN 201611193555 A CN201611193555 A CN 201611193555A CN 108233180 A CN108233180 A CN 108233180A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
Abstract
The present invention relates to a kind of 808nm semiconductor laser structures of AlGaInP structures, substrate, buffer layer, lower limit layer, lower waveguide layer, Quantum Well, upper ducting layer, the first upper limiting layer, the second upper limiting layer and ohmic contact layer are sequentially consisted of, the corrosion barrier layer of the selective corrosion solution by the material containing Al is equipped between first upper limiting layer and second upper limiting layer.Erosional surface can be made to end in corrosion barrier layer by the selective corrosion solution of the material containing Al during corrosion.Consistency between the symmetry and different batches of ridge structure both sides is greatly improved.
Description
Technical field
The present invention relates to a kind of 808nm semiconductor laser structures of AlGaInP structures, belong to semiconductor laser technology
Field.
Background technology
Semiconductor laser is widely used in due to having many advantages, such as that compact-sized, cost is relatively low, light field is easy to regulation and control
Light-pumped solid state laser, material processing, laser medicine etc..Wherein, wavelength is main for the semiconductor laser near 808nm
Purposes has two major class.First, for pumping Nd:YAG, and pass through the general green light of frequency multiplication acquisition 532nm.Low-power laser
Generally several milliwatts of the green light of pumping can be used for giving instruction and positioning tool, the huge market demand, batch production to tens milliwatts
Consistency and cost be crucial.Another kind of purposes is：High power laser can be used in laser beautifying, physical therapy, material processing,
In terms of the headlamp of night market, output demand is not high, but the additional output value is high, equally also very high to the performance requirement of laser.At present,
Several large-scale producers of the acp chip of high-power 808nm the semiconductor lasers only U.S., Germany etc. can do, and fold battle array product
Due to may be used as military affairs, portioned product is embargo.Based on middle low power, competition is fiercer for domestic manufacturer, into
This control is even more important.
AlGaAs materials are to be used to make 808nm semiconductor lasers earliest due to being easy to growth and material lattice matching
Material.For example, Chinese patent literature CN1O4600562A discloses a kind of 8O8nm flat-tops light field high power laser, including
Substrate and the buffer layer grown successively from bottom to up on substrate, lower limit layer, lower light field active layer, lower waveguide layer, quantum
Well layer, upper ducting layer, glazing field action layer, upper limiting layer and contact electrode layer.Lower light field active layer uses highly doped N-type
AlGaAs materials, glazing field action layer use highly doped p-type AlGaAs materials.The invention fast axle light field top part cloth is uniform,
Active area optical power density can be further reduced, improves the reliability and durability of laser.But aluminium-containing material easily oxygen
Change, deep energy level can be formed, enhance the non-radiative recombination rate of carrier, the Cavity surface of semiconductor laser is caused to overheat, is promoted
The generation and extension of concealed wire defect, so as to reduce the output power of laser and reliability.
In recent years, it is very big to cause people for (Al) GaInP/GaAsP structural semiconductor lasers with non-aluminum active area
Concern.Compared to the semiconductor laser of AlGaAs materials, it has the following advantages：Active area effectively can inhibit concealed wire to lack without aluminium
Sunken generation reduces non-radiative recombination center；Reduce interface recombination velocities so that internal quantum efficiency increases；Tensile strain quantum
Trap increases window region band gap in cleavage surface relaxation, improves Cavity surface optical damage threshold.
Chinese patent literature CN103457158A discloses a kind of GaAsP/GaInP quantum-well lasers of TM polarizations, has
Source region using no aluminum material, oxidation, the growth interface that can effectively reduce aluminium component are coarse, at Cavity surface additional electric field to laser
The influence of power output and reliability.Ducting layer and limiting layer are designed as unsymmetric structure simultaneously, can effectively reduce internal loss,
Improve peak power output and reliability.
Non- patentability document Proc.of SPIE Vol.6104 61040B have studied InGaAsP/GaInP structural semiconductors
Influence of the Quantum Well dependent variable of laser to laser threshold current density and gain coefficient finds that increase tensile strain amount can be with
Luminous power is effectively improved, so as to increase the power conversion efficiency of semiconductor laser.
AlGaInP materials are all employed in the design of these lasers, but are had a problem that.Carrying out chip technology
When, generally ridge structure is formed using wet corrosion technique limited to do current limit and light.Top covering is individual AlGaInP
During structure, the corrosion depth between batch can only be regulated and controled by experience and time, and consistency and controllability are poor.Even ridge
The both sides of type structure also can there are corrosion depth it is inconsistent the phenomenon that, this influences the consistency of electrical parameter and hot spot very big.Cause
This, in the consistency and repeatability of batch production, simple AlGaInP structure lasers are more rambunctious.
Invention content
For existing AlGaInP structures 808nm semiconductor lasers when making ridge structure corrosion depth it is inconsistent
Caused by electrical parameter and the problem of hot spot poor repeatability, the present invention proposes a kind of semiconductor of new A lGaInP structures and swashs
Light device structure；
The present invention can accurately control corrosion rate depth, and can guarantee the repeatability between batch, be suitble to mass production.
The technical scheme is that：
A kind of 808nm semiconductor laser structures of AlGaInP structures, sequentially consist of substrate, buffer layer, lower limit
Preparative layer, lower waveguide layer, Quantum Well, upper ducting layer, the first upper limiting layer, the second upper limiting layer and ohmic contact layer, described first
The corrosion barrier layer of the selective corrosion solution by the material containing Al is equipped between upper limiting layer and second upper limiting layer.
The advantage designed herein is, one layer of corrosion barrier layer is added among the first upper limiting layer and the second upper limiting layer,
Erosional surface can be made to end in corrosion barrier layer by the selective corrosion solution of the material containing Al during corrosion.Bar shaped luminous zone two
Consistency between the symmetry and different batches of side is greatly improved, as shown in Figure 1, the 808nm of tradition AlGaInP structures
Highly asymmetric, more than 100 nanometers of the difference of the bar shaped luminous zone both sides of semiconductor laser can lead to the effective refractive index of both sides
There is difference, so as to influence electrical parameter and hot spot.After the present invention adds in corrosion barrier layer, bar shaped luminous zone is as shown in Fig. 2, bar shaped
The height of luminous zone both sides is almost consistent.Meanwhile the use of corrosion barrier layer so that the window of original etching time becomes larger, weight
Renaturation is promoted, and cost reduction is suitable for producing in enormous quantities.
According to currently preferred, the corrosion barrier layer is p-type GamIn1-mP or p-type GaAsnP1-n, doping concentration 5-
10×1017cm-3, the value range of thickness 5-20nm, m are 0.4-0.6, and the value range of n is 0.9-1；
The advantage designed herein is that corrosion barrier layer uses p-type GamIn1-mP materials or p-type GaAsnP1-n, without Al,
It differs larger with the Al content of the second limiting layer, larger selective corrosion ratio can be obtained, ensure that barrier layer can stop
The corrosion of solution.
It is further preferred that the corrosion barrier layer is p-type Ga0.5In0.5P or p-type GaAs0.95P0.05, doping concentration 7
×1017cm-3, thickness 15nm.
The advantage designed herein is that corrosion barrier layer uses p-type Ga0.5In0.5P matches with substrate lattice, Ke Yisheng
Length, without generating mismatched defect, can obtain the second upper limiting layer of high quality to certain thickness.
According to currently preferred, first upper limiting layer is p-type (AlyGa1-y)0.5In0.5The value of P, y are 0.1-
0.4, doping concentration is 5-10 × 1017cm-3, thickness 100-400nm；Second upper limiting layer is p-type (AlzGa1-z)0.5In0.5The value of P, z are 0.9-1, and doping concentration is 5-10 × 1017cm-3, thickness 600-1100nm；
It is further preferred that first upper limiting layer is p-type (AlyGa1-y)0.5In0.5The value of P, y are 0.2-0.3,
Doping concentration is 6-8 × 1017cm-3, thickness 200-400nm；Second upper limiting layer is p-type (AlzGa1-z)0.5In0.5P, z
Value is 0.9-1, and doping concentration is 6-8 × 1017cm-3, thickness 800-1000nm；
Most preferably, first upper limiting layer is p-type (AlyGa1-y)0.5In0.5The value of P, y are 0.2, doping concentration
It is 7 × 1017cm-3, thickness 300nm；Second upper limiting layer is p-type (AlzGa1-z)0.5In0.5P, z value are 1, and doping is dense
Spend is 7 × 1017cm-3, thickness 1000nm.
The advantage designed herein is, the GaInP materials and the first upper limiting layer of corrosion barrier layer, the second upper limiting layer
AlGaInP materials are all phosphide, are easy to grow, and will not upset original growth air-flow, and GaInP materials will not be to Quantum Well
Shining has any absorption.
According to currently preferred, the substrate is is biased to<111>N-type GaAs (100) single-chip of crystal orientation, drift angle size
It it is 5-15 °, doping concentration is 2 × 1018cm-3-5×1018cm-3；The buffer layer uses N-type GaAs materials, doping concentration 1
×1018cm-3-3×1018cm-3, thickness 100-400nm；The lower waveguide layer is the Ga to undope0.5In0.5P, thickness are
200-500nm；The Quantum Well uses the GaAsP materials of tensile strain, thickness 5-15nm, excitation wavelength 804-812nm；Institute
It is the Ga to undope to state ducting layer0.5In0.5P, thickness 200-500nm；The ohmic contact layer is the p-type of heavy doping
GaAs, doping concentration are 1 × 1019cm-3-1×1020cm-3, thickness 150-250nm.
Beneficial effects of the present invention are：
1st, one layer of GaInP corrosion barrier layer is added among the first upper limiting layer and the second upper limiting layer, when corrosion can lead to
The selective corrosion solution of the material containing Al is crossed, erosional surface is made to end in corrosion barrier layer.The symmetry of ridge structure both sides and not
It is greatly improved with the consistency between batch.
2nd, after adding in corrosion barrier layer, the height of ridge structure is equal to the thickness of the second upper limiting layer and ohmic contact layer
Summation, so as to regulate and control the current expansion of laser and lateral refractive index, can be obtained taking human as the height for being accurately controlled ridge structure
To suitable electrical parameter and optical field distribution.
3rd, the GaInP materials of corrosion barrier layer and the first upper limiting layer, the AlGaInP materials of the second upper limiting layer are all phosphorus
Compound is easy to grow, and will not upset original growth air-flow, and GaInP materials will not have quantum well radiation any absorption.
4th, the use of corrosion barrier layer so that the window of original etching time becomes larger, and repeatability is promoted, cost reduction, fits
Together in mass production.
Description of the drawings
Fig. 1 is the bar shaped luminous zone electron microscope of the 808nm semiconductor lasers of tradition AlGaInP structures；
Left side is on the left of bar shaped luminous zone, right side is on the right side of bar shaped luminous zone in Fig. 1 in Fig. 1.
Fig. 2 is the bar shaped luminous zone electron microscope of the 808nm semiconductor lasers of AlGaInP structures of the present invention；
Left side is on the left of bar shaped luminous zone, right side is on the right side of bar shaped luminous zone in Fig. 2 in Fig. 2.
Fig. 3 is the structure diagram of the 808nm semiconductor laser structures of the AlGaInP structures of the present invention.
1st, substrate, 2, buffer layer, 3, lower limit layer, 4, lower waveguide layer, 5, Quantum Well, 6, upper ducting layer, 7, first upper limit
Preparative layer, 8, corrosion barrier layer, the 9, second upper limiting layer, 10, ohmic contact layer.
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of 808nm semiconductor laser structures of AlGaInP structures, sequentially consist of substrate 1, buffer layer 2, under
Limiting layer 3, lower waveguide layer 4, Quantum Well 5, upper ducting layer 6, the first upper limiting layer 7, the second upper limiting layer 9 and ohmic contact layer
10, equipped with the selective corrosion solution by the material containing Al between first upper limiting layer 7 and second upper limiting layer 9
Corrosion barrier layer 8.As shown in Figure 3.
The advantage designed herein is, one layer of corrosion barrier layer is added among the first upper limiting layer and the second upper limiting layer,
Erosional surface can be made to end in corrosion barrier layer by the selective corrosion solution of the material containing Al during corrosion.Bar shaped luminous zone two
Consistency between the symmetry and different batches of side is greatly improved, as shown in Figure 1, the 808nm of tradition AlGaInP structures
Highly asymmetric, more than 100 nanometers of the difference of the bar shaped luminous zone both sides of semiconductor laser can lead to the effective refractive index of both sides
There is difference, so as to influence electrical parameter and hot spot.After the present invention adds in corrosion barrier layer, bar shaped luminous zone is as shown in Fig. 2, bar shaped
The height of luminous zone both sides is almost consistent.Meanwhile the use of corrosion barrier layer so that the window of original etching time becomes larger, weight
Renaturation is promoted, and cost reduction is suitable for producing in enormous quantities.
Substrate 1 is is biased to<111>GaAs (100) single-chip that 10 ° of crystal orientation, doping concentration is 2 × 1018cm-3；Buffering
Layer 2 uses N-type GaAs materials, and doping concentration is 1 × 1018cm-3, thickness 300nm；Lower limit layer 3 is thickness 1200nm's
(Al0.3Ga0.7)0.5In0.5P, doping concentration are 1 × 1018cm-3；Lower waveguide layer 4 is the undoped Ga of thickness 200nm0.5In0.5P；
Quantum Well 5 is the GaAsP of thickness 10nm；Upper ducting layer 6 is the undoped Ga of thickness 200nm0.5In0.5P；First upper limiting layer 7
(Al for thickness 200nm0.3Ga0.7)0.5In0.5P, doping concentration are 1 × 1018cm-3.Corrosion barrier layer 8 is a layer thickness 10nm
Ga0.5In0.5P, doping concentration are 1 × 1018cm-3.Second upper limiting layer 9 is the Al of thickness 800nm0.5In0.5P, doping concentration
It is 1 × 1018cm-3.Ohmic contact layer 10 is the GaAs of thickness 200nm, and doping concentration is 5 × 1019cm-3。
The Ga contents of corrosion barrier layer 8 differ larger with the Al content of the second upper limiting layer 9, and dilute hydrochloric acid solution is to Al and Ga
The selective corrosion speed ratio of atom is more than 1000.Corrosion barrier layer 8 can be very good further corroding for blocking solution so that
Corrosion stop surface is located at 8 surface of corrosion barrier layer.3 and first upper limiting layer 7 of lower limit layer, lower waveguide layer 4 and upper ducting layer 6 are all
Using symmetrical structure, but since the refractive index of the second limiting layer 9 is much smaller than the refractive index of lower limit layer, optical field distribution is inclined
To N areas, it is possible to reduce absorption of the P areas hole to light.
Embodiment 2
According to the 808nm semiconductor laser structures of AlGaInP structures described in embodiment 1, difference lies in substrates 1
To be biased to<111>GaAs (100) single crystalline substrate that 15 ° of crystal orientation, doping concentration are 3 × 1018cm-3.Buffer layer 2 is thickness 200nm
GaAs, doping concentration be 1 × 1018cm-3.Lower limit layer 3 is the (Al of thickness 1200nm0.2Ga0.7)0.5In0.5P, doping concentration
It is 1 × 1018cm-3.Lower waveguide layer 4 is the undoped Ga of thickness 500nm0.5In0.5P.Quantum Well 5 is the GaAsP of thickness 10nm.
Upper ducting layer 6 is the undoped Ga of thickness 500nm0.5In0.5P.First upper limiting layer 7 is the (Al of thickness 400nm0.3Ga0.7)0.5In0.5P, doping concentration are 1 × 1018cm-3.Corrosion barrier layer 8 is the Ga of a layer thickness 10nm0.5In0.5P, doping concentration 1
×1018cm-3.Second upper limiting layer 9 is the (Al of thickness 1000nm0.9Ga0.1)0.5In0.5P, doping concentration are 1 × 1018cm-3.Europe
Nurse contact layer 10 is the GaAs of thickness 200nm, and doping concentration is 5 × 1019cm-3。
The main distinction of this embodiment and embodiment 1 is that lower waveguide layer 4,6 thickness of upper ducting layer are larger, second upper limit
Influence of the preparative layer 9 to light field is smaller.Unsymmetric structure is used in 3 and first upper limiting layer 7 of lower limit layer so that light field is still
So it is biased to N areas.The Al components of second upper limiting layer 9 accordingly reduce, and increase part Ga atoms, can prevent high Al contents material from existing
Degree of oxidation in corrosive liquid reduces the absorption to light.Meanwhile it when making ridge structure, needs to increase corresponding etching time.
Claims (7)
1. a kind of 808nm semiconductor laser structures of AlGaInP structures, which is characterized in that sequentially consist of substrate, delay
Layer, lower limit layer, lower waveguide layer, Quantum Well, upper ducting layer, the first upper limiting layer, the second upper limiting layer and ohmic contact layer are rushed,
The corrosion of the selective corrosion solution by the material containing Al is equipped between first upper limiting layer and second upper limiting layer
Barrier layer.
A kind of 2. 808nm semiconductor laser structures of AlGaInP structures according to claim 1, which is characterized in that institute
Corrosion barrier layer is stated as p-type GamIn1-mP or p-type GaAsnP1-n, doping concentration is 5-10 × 1017cm-3, thickness 5-20nm, m
Value range for 0.4-0.6, the value range of n is 0.9-1.
3. a kind of 808nm semiconductor laser structures of AlGaInP structures according to claim 1 or 2, feature exist
In the corrosion barrier layer is p-type Ga0.5In0.5P or p-type GaAs0.95P0.05, doping concentration is 7 × 1017cm-3, thickness is
15nm。
A kind of 4. 808nm semiconductor laser structures of AlGaInP structures according to claim 1, which is characterized in that institute
The first upper limiting layer is stated as p-type (AlyGa1-y)0.5In0.5The value of P, y are 0.1-0.4, and doping concentration is 5-10 × 1017cm-3,
Thickness is 100-400nm；Second upper limiting layer is p-type (AlzGa1-z)0.5In0.5The value of P, z be 0.9-1, doping concentration
For 5-10 × 1017cm-3, thickness 600-1100nm.
A kind of 5. 808nm semiconductor laser structures of AlGaInP structures according to claim 4, which is characterized in that institute
The first upper limiting layer is stated as p-type (AlyGa1-y)0.5In0.5The value of P, y are 0.2-0.3, and doping concentration is 6-8 × 1017cm-3, it is thick
It spends for 200-400nm；Second upper limiting layer is p-type (AlzGa1-z)0.5In0.5P, z value are 0.9-1, doping concentration 6-
8×1017cm-3, thickness 800-1000nm.
A kind of 6. 808nm semiconductor laser structures of AlGaInP structures according to claim 4, which is characterized in that institute
The first upper limiting layer is stated as p-type (AlyGa1-y)0.5In0.5The value of P, y are 0.2, and doping concentration is 7 × 1017cm-3, thickness is
300nm；Second upper limiting layer is p-type (AlzGa1-z)0.5In0.5P, z value are 1, and doping concentration is 7 × 1017cm-3, thickness
For 1000nm.
A kind of 7. 808nm semiconductor laser structures of AlGaInP structures according to claim 1, which is characterized in that institute
Substrate is stated to be biased to<111>N-type GaAs (100) single-chip of crystal orientation, drift angle size are 5-15 °, and doping concentration is 2 × 1018cm-3-5×1018cm-3；The buffer layer uses N-type GaAs materials, and doping concentration is 1 × 1018cm-3-3×1018cm-3, thickness is
100-400nm；The lower waveguide layer is the Ga to undope0.5In0.5P, thickness 200-500nm；The Quantum Well is used to open and be answered
The GaAsP materials of change, thickness 5-15nm, excitation wavelength 804-812nm；The upper ducting layer undopes
Ga0.5In0.5P, thickness 200-500nm；The ohmic contact layer is the p-type GaAs of heavy doping, and doping concentration is 1 × 1019cm-3-1×1020cm-3, thickness 150-250nm.
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| CN112615258A (en) * | 2020-12-03 | 2021-04-06 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser structure made of AlInGaAsP material |
| CN114079226A (en) * | 2020-08-21 | 2022-02-22 | 山东华光光电子股份有限公司 | High-uniformity high-power laser epitaxial wafer and preparation method thereof |
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