CN204376193U - Strain balance active area gradient potential well layer semiconductor laser structure - Google Patents
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Abstract
The utility model belongs to Semiconductor Optic Electronics technical field, specifically disclose a kind of strain balance active area gradient potential well layer semiconductor laser structure, this structure comprise adopt mocvd method on substrate to lower and on successively epitaxially grown resilient coating, lower matching layer, lower limit layer, lower transition zone, lower waveguide layer, multiple quantum well layer, on ducting layer, on transition zone, upper limiting layer, on matching layer and contact electrode layer.The utility model be improving the barrier layer of multiple quantum well layer and Potential well layer materials abrupt hetero-interface quality, to reduce lattice constant strain mismatch ratio excessive, reduce the accumulation strain mismatch ratio that quantum well active area is total, avoid quantum well heterogeneous interface generation lattice relaxation phenomenon, thus to reducing threshold current, the increase power output of laser, improve photoelectric conversion efficiency and life-saving reliability etc. to improve, the semiconductor laser of the new structural material system obtained.
Description
Technical field
The utility model relates to Semiconductor Optic Electronics technical field, particularly a kind of semiconductor laser, specifically a kind of strain balance active area gradient potential well layer semiconductor laser structure.
Background technology
High power semiconductor lasers has a very wide range of applications and the market demand at light-pumped solid state laser and light pricker field of lasers, medical field and communication information field.Along with more and more higher to the requirement of laser power, the problem of device reliability is more and more outstanding.For high power semiconductor lasers, face, the chamber catastrophic optical damage damage caused due to high Output optical power density and various Carrier recombination thermal effect cause the rising of the temperature in active area and face, chamber to become the maximum Output optical power density of restriction, affect the principal element in its reliability and life-span.
Along with the development of laser technique and Semiconductor Film Growth technology, with the InGaAs/AlGaAs of low al composition be quantum well, InGaAs/GaAs tradition quantum well and novel InGaAs/GaAsP active area laser structure.Under the high-power condition of work of big current, producing a large amount of heat energy makes Al element oxide in active area, face, chamber optical damage threshold low, InGaAs/GaAs tradition quantum-well materials can produce Carrier Leakage, the shortcomings such as operation threshold electric current is high, and photoelectric conversion efficiency is low gradually will replace by new material adapting to the demand of market to high power laser.InGaAs/GaAsP active area laser is a kind of novel high power semiconductor lasers material, effectively can solve the shortcomings such as active area Al oxidation, Carrier Leakage.But how the shortcoming of this novel Spectrum of Semiconductor Quantum Wells: 1. Material growth lattice matching issues, realize high-quality strain-compensated quantum well material coherent growth; 2. under high In ingredient, after growth potential well layer quantum-well materials, easily there is segregation in In, causes heterogeneous interface poor, how to realize the smooth abrupt hetero-interface being applicable to field of lasers of growing high-quality.
In order to solve the preparation of the high-quality heterogeneous interface of active area strain-compensated quantum well, on the basis of common strain-compensated quantum well, propose to have grown in the middle of high In ingredient potential well layer to barrier layer and insert ultra-thin low In component I nGaAs layer and ultra-thin GaAs layer, thus it is excessive to solve mismatch ratio, cause growing surface roughness large, the problems such as In segregation.
Along with the development of technology, at present in order to obtain stable high-power output, improve face, chamber catastrophic optical damage threshold current low, improve slope efficiency and photoelectric conversion efficiency etc., the growth quality of noise spectra of semiconductor lasers active area quantum-well materials heterogeneous interface requires more and more higher.
Summary of the invention
The purpose of this utility model is to provide a kind of strain balance active area gradient potential well layer semiconductor laser structure, on the basis of asymmetric waveguide layer, to the ducting layer material of device and limiting layer material, how Effect Mode restriction factor, absorption loss, threshold current, power output and long-life reliability etc. are studied, to obtaining the semiconductor laser of optimized made of new structural material system.
The utility model is achieved by the following technical solution:
A kind of strain balance active area gradient potential well layer semiconductor laser structure, comprising:
Substrate is the N-type GaAs material in (100) face;
Resilient coating, is located on substrate, is N-type GaAs material;
Lower matching layer, is located on resilient coating, is N-type AlGaAs material;
Lower limit layer, is located on lower matching layer, is N-type AlGaAs material;
Lower transition zone, is located on lower limit layer, is N-type GaAs material;
Lower waveguide layer, is located on lower transition zone, is N-type InGaAsP material;
Multiple quantum well layer, is located on lower waveguide layer, and comprise high In ingredient InGaAs/ low In component I nGaAs/GaAs/GaAsP barrier layer, periodicity is 2≤N≤6; Multiple quantum well layer from bottom to top comprises: a GaAsP barrier layer, first Lattice Matching resilient coating GaAs, first low In component strain compensation intermediate layer InGaAs, InGaAs potential well layer, second low In component strain compensation intermediate layer InGaAs, the second Lattice Matching resilient coating GaAs and the 2nd GaAsP barrier layer;
Upper ducting layer, is located on multiple quantum well layer, is P type InGaAsP material;
Upper transition zone, is located on ducting layer, is P type GaAs material;
Upper limiting layer, is located on transition zone, is P type AlGaAs material;
Upper matching layer, is located on upper limiting layer, is P type InGaP material;
Contact electrode layer, is located on matching layer, is P type GaAs material.
Further, substrate HIGH TEMPERATURE PURGE temperature is 700 DEG C;
The thickness of resilient coating is 150nm, and doped chemical is silicon, and carrier concentration is 3.5E18,
/
than being 5, growth temperature is 550 DEG C;
The thickness of lower matching layer is 30nm, and wherein the component of Al is for being more than or equal to 0.05, being less than or equal to 0.2, and carrier concentration is 3.0E18,
/
than being 5, growth temperature is 550 DEG C to 650 DEG C;
The thickness of lower limit layer is 1850nm, and wherein the component of Al is greater than 0.45, and doped chemical is silicon; Carrier concentration is 2.0E18;
/
than being 50, growth temperature is 650 DEG C;
The thickness of lower transition zone is 2nm, and growth temperature is 690 DEG C; Lower transition zone adopts GaAs material, makes the interface of lower limit layer and lower waveguide layer easily obtain high-quality epitaxial material, reduces interfacial state number, reduces the temperature rise that Carrier recombination thermal effect causes, and improves the reliability of laser;
The thickness of lower waveguide layer is 400nm, wherein the component of In is greater than 0 and is less than 0.45, the component of P is less than or equal to 0.1, lower waveguide layer adopts the InGaAsP material that band difference is little, this material system can provide less conduction band difference and larger valence band poor, be conducive to the potential barrier that conduction band electron injects and valence band is higher to hole formation, improve COD value, increase the reliability of device; The carrier concentration of lower waveguide layer is 3.0E17,
/
than being 80, growth temperature is 690 DEG C;
Multiple quantum well layer adopts strain-compensated quantum well high In ingredient InGaAs/ low In component I nGaAs/GaAs/GaAsP material, can reduce accumulation strain mismatch ratio like this, reduces operation threshold electric current, thus meets the high-power demand of big current; The thickness of the one GaAsP barrier layer is 12nm-20nm, and wherein P component is greater than 0.1; The thickness of the first Lattice Matching resilient coating GaAs is 0.56nm; The thickness of the first low In component strain compensation intermediate layer InGaAs is 0.57nm, and wherein component is little of 0.15 for being greater than 0.075; The thickness of InGaAs potential well layer is 6nm-10nm, and wherein component is greater than 0.15 and is less than 0.22; The thickness of the second low In component strain compensation intermediate layer InGaAs is 0.57nm, and wherein component is less than 0.15 for being greater than 0.075; The thickness of the second Lattice Matching resilient coating GaAs is 0.56nm; 2nd GaAsP barrier layer thickness is 12nm-20nm, and wherein P component is greater than 0.1; Multiple quantum well layer
/
than being 100, growth temperature is 690 DEG C; This gradient In content gradually variational layer effectively can solve the segregation phenomena under high In ingredient, reaches the object improving interface quality.Lattice Matching under high In ingredient can also be solved, avoid quantum-well materials generation relaxation phenomena.Therefore, the insertion of the ultra-thin graded bedding of gradient can improve the reduction of the dislocation density caused because of mismatch, thus improves the interface quality of quantum well;
The thickness of upper ducting layer is 250nm, wherein the component of ln is greater than 0 and is less than 0.45, the component of P is less than or equal to 0.1, upper ducting layer adopts the InGaAsP material that band difference is little, this material system can provide less conduction band difference and larger valence band poor, be conducive to the potential barrier that conduction band electron injects and valence band is higher to hole formation, improve COD value, increase the reliability of device; And select asymmetrical straight wave guide structure, the quantum well restriction factor of this waveguiding structure is less, and operating voltage is low, can improve light power under the condition of identical quantum well thickness; Upper ducting layer
/
than being 80, growth temperature is 690 DEG C;
The thickness of upper transition zone is 2nm,
/
than being 50, growth temperature is 690 DEG C; Upper transition zone adopts GaAs material, makes the interface of ducting layer and upper limiting layer easily obtain high-quality epitaxial material, reduces interfacial state number, reduces the temperature rise that Carrier recombination thermal effect causes, and improves the reliability of laser;
The thickness of upper limiting layer is 1850nm, and wherein the component of Al is greater than 0.25, and doped chemical is that carbon or carbon zinc are mixed altogether, and carrier concentration is 7.0E17,
/
than being 50, growth temperature is 690 DEG C; Upper limiting layer adopts the little AlGaAs material of conduction band difference, this material system can provide less conduction band difference and larger valence band poor, be conducive to conduction band electron and form good restriction, reduction valence band hole is injected with the obstruction in source region simultaneously;
The thickness of upper matching layer is 30nm, and wherein the component of In is more than or equal to 0.45, is less than or equal to 0.6, and doped chemical is that carbon or carbon zinc are mixed altogether, carrier concentration>=2.0E19,
/
than being 5, growth temperature is 690 DEG C;
The thickness of contact electrode layer is 150nm, and doped chemical is that carbon or carbon zinc are mixed altogether, carrier concentration>=1.0E20,
/
than being 5, growth temperature is 650 DEG C.
The preparation method of strain balance active area gradient potential well layer semiconductor laser structure described in the utility model is: adopt the method for metal organic chemical vapor deposition (MOCVD) on N-GaAs substrate to lower and on each layer of epitaxial growth successively.
The utility model be improving the barrier layer of multiple quantum well layer and Potential well layer materials abrupt hetero-interface quality, to reduce lattice constant strain mismatch ratio excessive, reduce the accumulation strain mismatch ratio that quantum well active area is total, avoid quantum well heterogeneous interface generation lattice relaxation phenomenon, thus to reducing threshold current, the increase power output of laser, improve photoelectric conversion efficiency and life-saving reliability etc. to improve, the semiconductor laser of the new structural material system obtained.
The beneficial effects of the utility model are as follows:
1) asymmetric straight wave guide: quantum well restriction factor is less, under the condition of identical quantum well thickness, can obtain larger spot definition, reduces voltage, improves electro-optical efficiency, improves light power;
2) InGaAsP quaternary ducting layer: provide less conduction band difference and larger valence band poor, be easy to conduction band electron like this inject and form higher potential barrier in valence band to hole, have the COD value utilizing charge carrier to significantly improve, 2 times of about AlGaAs ducting layer, device reliability and stability improves;
3) strain-compensated quantum well: reduce strain mismatch ratio, improve multi-quantum-well film and interface crystal mass, increase the combined efficiency of electron hole pair;
4) potential well gradient layer: avoid the segregation phenomena under high In ingredient, reduces the mismatch ratio of heterojunction, improves the smoothness of quantum well interface surface, reduces band curvature, thus realizes increasing particle inverted population.
Accompanying drawing explanation
The schematic diagram of the utility model strain balance active area, Fig. 1 position gradient potential well layer semiconductor laser structure.
In figure: 1-substrate, 2-resilient coating, matching layer under 3-, 4-lower limit layer, transition zone under 5-, 6-lower waveguide layer, 7-the one GaAsP barrier layer, 8-first Lattice Matching resilient coating GaAs, the low In component strain compensation intermediate layer InGaAs of 9-first, 10-InGaAs potential well layer, the low In component strain compensation intermediate layer InGaAs of 11-second, 12-second Lattice Matching resilient coating GaAs, 13-the 2nd GaAsP barrier layer, the upper ducting layer of 14-, the upper transition zone of 15-, 16-upper limiting layer, the upper matching layer of 17-, 18-contact electrode layer.
Embodiment
Below in conjunction with accompanying drawing, the utility model will be further described:
As shown in Figure 1, a kind of strain balance active area gradient potential well layer semiconductor laser structure, comprise: the substrate (1) be made up of the N-type GaAs material in (100) face, the resilient coating (2) be made up of N-type GaAs material, the lower matching layer (3) be made up of N-type AlGaAs material, the lower limit layer (4) be made up of N-type AlGaAs material, the lower transition zone (5) be made up of N-type GaAs material, the lower waveguide layer (6) be made up of N-type InGaAsP material, multiple quantum well layer, the upper ducting layer (14) be made up of P type InGaAsP material, the upper transition zone (15) be made up of P type GaAs material, the upper limiting layer (16) be made up of P type AlGaAs material, the upper matching layer (17) be made up of P type InGaP material and the contact electrode layer (18) be made up of P type GaAs material, substrate (1), resilient coating (2), lower matching layer (3), lower limit layer (4), lower transition zone (5), lower waveguide layer (6), multiple quantum well layer, upper ducting layer (14), upper transition zone (15), upper limiting layer (16), upper matching layer (17) and contact electrode layer (18) from bottom to top adopt the mocvd method each layer of epitaxial growth successively, multiple quantum well layer comprise from bottom to top adopt a mocvd method epitaxially grown GaAsP barrier layer (7), the first Lattice Matching resilient coating GaAs(8 successively), the first low In component strain compensation intermediate layer InGaAs(9), InGaAs potential well layer (10), the second low In component strain compensation intermediate layer InGaAs(11), the second Lattice Matching resilient coating GaAs(12) and the 2nd GaAsP barrier layer (13).
The preparation method of this strain balance active area gradient potential well layer semiconductor laser structure comprises: 1) with N-GaAs substrate 1 for substrate, 2) on aforesaid substrate, adopt the method primary depositing resilient coating 2 of metal organic chemical vapor deposition, lower matching layer 3, lower limit layer 4, lower transition zone 5, lower waveguide layer 6, multiple quantum well layer from bottom to top comprises: a GaAsP barrier layer 7, first Lattice Matching resilient coating GaAs8, first low In component strain compensation intermediate layer InGaAs9, InGaAs potential well layer 10, second low In component strain compensation intermediate layer InGaAs11, second Lattice Matching resilient coating GaAs12, 2nd GaAsP barrier layer 13, upper ducting layer 14, upper transition zone 15, upper limiting layer 16, upper matching layer 17, with contact electrode layer 18.
During concrete enforcement, substrate 1 HIGH TEMPERATURE PURGE temperature is 700 DEG C;
The thickness of resilient coating 2 is 150nm, and doped chemical is silicon, and carrier concentration is 3.5E18,
/
than being 5, growth temperature is 550 DEG C;
The thickness of lower matching layer 3 is 30nm, and wherein the component of Al is for being more than or equal to 0.05, being less than or equal to 0.2, and carrier concentration is 3.0E18,
/
than being 5, growth temperature is 550 DEG C to 650 DEG C;
The thickness of lower limit layer 4 is 1850nm, and wherein the component of Al is greater than 0.45, and doped chemical is silicon; Carrier concentration is 2.0E18;
/
than being 50, growth temperature is 650 DEG C;
The thickness of lower transition zone 5 is 2nm, and growth temperature is 690 DEG C;
The thickness of lower waveguide layer 6 is 400nm, and wherein the component of In is greater than 0 component being less than 0.45, P and is less than or equal to 0.1, and lower waveguide 6 layers adopts the InGaAsP material that band difference is little, and carrier concentration is 3.0E17;
/
than being 80, growth temperature is 690 DEG C;
Multiple quantum well layer adopts strain-compensated quantum well high In ingredient InGaAs/ low In component I nGaAs/GaAs/GaAsP material, and the thickness of a GaAsP barrier layer 7 is 12nm-20nm, and wherein P component is greater than 0.1; The thickness of the first Lattice Matching resilient coating GaAs8 is 0.56nm; The thickness of the first low In component strain compensation intermediate layer InGaAs9 is 0.57nm, and wherein component is little of 0.15 for being greater than 0.075; The thickness of potential well layer 10 is 6nm-10nm, and wherein component is greater than 0.15 and is less than 0.22; The thickness of the second low In component strain compensation intermediate layer InGaAs11 is 0.57nm, and wherein component is less than 0.15 for being greater than 0.075; The thickness of the second Lattice Matching resilient coating GaAs12 is 0.56nm; 2nd GaAsP barrier layer 13 thickness is 12nm-20nm, and wherein P component is greater than 0.1; Multiple quantum well layer
/
than being 100, growth temperature is 690 DEG C;
The thickness of upper ducting layer 14 is 250nm, and wherein the component of ln is greater than 0 component being less than 0.45, P and is less than or equal to 0.1, and upper ducting layer 14 adopts the InGaAsP material that band difference is little, and selects asymmetrical straight wave guide structure; Upper ducting layer 14
/
than being 80, growth temperature is 690 DEG C;
The thickness of upper transition zone 15 is 2nm,
/
than being 50, growth temperature is 690 DEG C;
The thickness of upper limiting layer 16 is 1850nm, and wherein the component of Al is greater than 0.25, and doped chemical is that carbon or carbon zinc are mixed altogether, and carrier concentration is 7.0E17,
/
than being 50, growth temperature is 690 DEG C;
The thickness of upper matching layer 17 is 30nm, and wherein the component of In is more than or equal to 0.45, is less than or equal to 0.6, and doped chemical is that carbon or carbon zinc are mixed altogether, carrier concentration>=2.0E19,
/
than being 5, growth temperature is 690 DEG C;
The thickness of contact electrode layer 18 is 150nm, and doped chemical is that carbon or carbon zinc are mixed altogether, carrier concentration>=1.0E20,
/
than being 5, growth temperature is 650 DEG C.
Upper and lower ducting layer 6,14 adopts asymmetric straight wave guide structure.The upper matching layer 17 of the upper transition zone of P-GaAs 15, P-AlGaAs upper limiting layer 16, P-GaAs, P+GaAs contact electrode layer 18 adopt CCl4 as doped source or with DEZn codope.Matching layer 3 under N-GaAs is inserted between N-GaAs resilient coating 2 and N-AlGaAs lower limit layer 4; P-InGaAsP inserts transition zone 15 on P-GaAs between ducting layer 14 and P-AlGaAs upper limiting layer 16; Matching layer 17 on GaAs is inserted between P-AlGaAs upper limiting layer 16 and P+GaAs contact electrode layer 18.
The foregoing is only embodiment of the present utility model, be not limited to the utility model.The utility model can have various suitable change and change.All do within spirit of the present utility model and principle any amendment, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (2)
1. a strain balance active area gradient potential well layer semiconductor laser structure, it is characterized in that, comprise: the substrate (1) be made up of the N-type GaAs material in (100) face, the resilient coating (2) be made up of N-type GaAs material, the lower matching layer (3) be made up of N-type AlGaAs material, the lower limit layer (4) be made up of N-type AlGaAs material, the lower transition zone (5) be made up of N-type GaAs material, the lower waveguide layer (6) be made up of N-type InGaAsP material, multiple quantum well layer, the upper ducting layer (14) be made up of P type InGaAsP material, the upper transition zone (15) be made up of P type GaAs material, the upper limiting layer (16) be made up of P type AlGaAs material, the upper matching layer (17) be made up of P type InGaP material and the contact electrode layer (18) be made up of P type GaAs material, substrate (1), resilient coating (2), lower matching layer (3), lower limit layer (4), lower transition zone (5), lower waveguide layer (6), multiple quantum well layer, upper ducting layer (14), upper transition zone (15), upper limiting layer (16), upper matching layer (17) and contact electrode layer (18) from bottom to top adopt the mocvd method each layer of epitaxial growth successively, multiple quantum well layer comprise from bottom to top adopt a mocvd method epitaxially grown GaAsP barrier layer (7), the first Lattice Matching resilient coating GaAs(8 successively), the first low In component strain compensation intermediate layer InGaAs(9), InGaAs potential well layer (10), the second low In component strain compensation intermediate layer InGaAs(11), the second Lattice Matching resilient coating GaAs(12) and the 2nd GaAsP barrier layer (13).
2. strain balance active area according to claim 1 gradient potential well layer semiconductor laser structure, it is characterized in that: the thickness of resilient coating (2) is 150nm, the thickness of lower matching layer (3) is 30nm, the thickness of lower limit layer (4) is 1850nm, the thickness of lower transition zone (5) is 2nm, and the thickness of lower waveguide layer (6) is 400nm; In multiple quantum well layer, the thickness of a GaAsP barrier layer (7) is 12nm-20nm, first Lattice Matching resilient coating GaAs(8) thickness be 0.56nm, first low In component strain compensation intermediate layer InGaAs(9) thickness be 0.57nm, the thickness of potential well layer (10) is 6nm-10nm, second low In component strain compensation intermediate layer InGaAs(11) thickness be 0.57nm, second Lattice Matching resilient coating GaAs(12) thickness be 0.56nm, the 2nd GaAsP barrier layer (13) thickness is 12nm-20nm; The thickness of upper ducting layer (14) is 250nm, and the thickness of upper transition zone (15) is 2nm, and the thickness of upper limiting layer (16) is 1850nm, and the thickness of upper matching layer (17) is 30nm, and the thickness of contact electrode layer (18) is 150nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104795729A (en) * | 2015-02-14 | 2015-07-22 | 太原理工大学 | Stain-balance active-area gradient potential well layer semiconductor laser structure |
| CN107546287A (en) * | 2017-08-25 | 2018-01-05 | 扬州乾照光电有限公司 | A kind of solar cell and preparation method thereof |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
| WO2022110914A1 (en) * | 2020-11-25 | 2022-06-02 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, laser and laser radar |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795729A (en) * | 2015-02-14 | 2015-07-22 | 太原理工大学 | Stain-balance active-area gradient potential well layer semiconductor laser structure |
| CN104795729B (en) * | 2015-02-14 | 2018-04-24 | 太原理工大学 | Strain balances active field gradient potential well layer semiconductor laser structure |
| CN107546287A (en) * | 2017-08-25 | 2018-01-05 | 扬州乾照光电有限公司 | A kind of solar cell and preparation method thereof |
| CN107546287B (en) * | 2017-08-25 | 2019-10-01 | 扬州乾照光电有限公司 | A kind of solar battery and preparation method thereof |
| WO2022110914A1 (en) * | 2020-11-25 | 2022-06-02 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, laser and laser radar |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
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