CN105048285A - Method for improving the performance of gallium nitride laser - Google Patents
Method for improving the performance of gallium nitride laser Download PDFInfo
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- CN105048285A CN105048285A CN201510548632.6A CN201510548632A CN105048285A CN 105048285 A CN105048285 A CN 105048285A CN 201510548632 A CN201510548632 A CN 201510548632A CN 105048285 A CN105048285 A CN 105048285A
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Abstract
The invention discloses a gallium nitride laser and a fabrication method thereof. The method comprises the following steps of: 1, sequentially fabricating a n-type limitation layer, a n-type waveguide layer, a quantum well active region, an electron barrier layer, an insertion layer, a p-type waveguide layer, a p-type limitation layer and a p-type contact layer on a gallium nitride substrate; 2, leading the P-type contact layer and the P-type limitation layer to form ridge shapes by wet etching or dry etching; 3, growing a layer of oxidation film on the fabricated ridge shapes, and fabricating a p-type ohmic electrode by using a photoetching method; 4, fabricating the gallium nitride substrate thinner and washing, and fabricating an n-type ohmic electrode on the gallium nitride substrate; and 5, carrying out cleavage and film coating, and finally packaging the gallium nitride substrate on a tube shell to make the gallium nitride laser. In the laser proposed by the invention, with the introduction of the insertion layer, two advantages can be brought to the structure: 1, hole injection is facilitated; and 2, effective potential barrier of an electron is increased.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, particularly one and put forward high performance GaN base laser designing and making method.
Background technology
Along with developing rapidly of semiconductor photoelectronic device, gallium nitride semiconductor laser arises at the historic moment.Gallium nitride lasers, especially royal purple optical band, relative to ruddiness and infrared laser, less spot size and the larger depth of focus can be provided, thus have a wide range of applications in the laser printing and large density memory systems of more high-resolution, faster speed.In addition, blue laser, in conjunction with present existing ruddiness, green (light) laser, in Projection Display and panchromatic printing field, has very wide prospect.Thus, people have higher requirement to gallium nitride lasers performance.
GaN base laser material layer is mainly divided into three parts: the active area that single quantum well or Multiple Quantum Well are formed, side, active area provide the N district of electronics, active area opposite side to provide the P district in hole for active area for active area.Electronics and hole is driven to carry out compound perpendicular to the direction of junction plane being injected into active area and producing light by applying applying bias.Feedback cavity is formed, the light that electron-hole recombinations is produced continuous resonance and form the standing wave that wavefront is parallel to minute surface in chamber by the understanding minute surface at two ends, side.If the gain of light in active area has exceeded the light loss in laser structure, will produce the stimulated radiation of amplification, laser just can emit from mirrored ends.For common gallium nitrate based bluish violet light laser, because excitation wavelength is shorter, quantum well depth is less, more weak to the constraint ability of charge carrier, the less electronics of effective mass injected from the n district active area that is easy to jump over is injected into p district, there is non-radiative recombination with the hole in p district, form larger electronics Leakage Current.In order to the electronics reducing GaN base laser is revealed, traditional way is exactly between active area and p district, insert the larger aluminum gallium nitride of energy gap, and by introducing larger conduction band band rank, block electrons is leaked to p district.
The introducing of electronic barrier layer aluminum gallium nitride, reveals although can reduce electronics, also deposits counter productive both ways.The first, because electronic barrier layer aluminum gallium nitride exists stronger polarization, the conduction band that last quantum is built is bent downwardly, and this makes electron quasi-Fermi energy level easily enter conduction band, reduces the effective potential barrier of electronics.The second, due to the band gap that electronic barrier layer is larger, make valence band introduce band rank, hinder the injection in hole.In recent years, for these two counter productives, people have done much research, and such as, improve the mobility that quality of material grown improves hole, the electron barrier layer structure introducing graded component improves the effective potential barrier of electronics.But in these schemes, only one-sidely improve one of them counter productive, another counter productive is not dealt with, even exacerbates another counter productive.
Summary of the invention
The object of the invention is to, propose a kind of GaN base laser and preparation method thereof, for improving the performance of described GaN base laser.
According to an aspect of the present invention, which provide a kind of preparation method of GaN base laser, comprise the following steps:
Step 1: make N-shaped limiting layer, N-shaped ducting layer, Quantum well active district, electronic barrier layer, insert layer, p-type ducting layer, p-type limiting layer and P type contact layer on gallium nitride substrate successively;
Step 2: P type contact layer is become ridge with P type limiting layer wet etching or dry etching;
Step 3: grow one deck oxidation mould on the described ridge be made into, and adopt the method for photoetching to make p-type Ohmic electrode;
Step 4: gallium nitride substrate is thinning, cleaning, and N-shaped Ohmic electrode is made above;
Step 5: carry out cleavage, plated film, is finally encapsulated on shell, makes gallium nitride lasers.
According to a further aspect of the invention, which provide a kind of GaN base laser, it comprises:
Grow the N-shaped limiting layer on gallium nitride substrate, N-shaped ducting layer, Quantum well active district, electronic barrier layer, p-type ducting layer, p-type limiting layer and P type contact layer successively;
Wherein, between described electronic barrier layer and P type ducting layer, also there is an insert layer.
10, GaN base laser as claimed in claim 9, wherein, the material of described insert layer is doped indium gallium nitrogen, and its thickness is 2-15nm, and indium component is 0.005-0.05.
Key of the present invention is: the first, the selection of indium gallium nitrogen insert layer indium component.Indium component is too low, and the degree of polarization of this insert layer is more weak, improves more weak to laser performance.Indium component is too high, and too much hole accumulation, in insert layer, causes laser performance to worsen.The second, the selection of indium gallium nitrogen insert layer thickness.Insert layer thickness is too thin, and improvement result is more weak.Thickness is too thick, and hole concentration accumulates, and causes the waste that hole is too much.In addition, indium gallium nitrogen insert layer thickness is also by the restriction of critical thickness, too thick, and Material growth difficulty, quality of materials is poor.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of GaN base laser that the present invention proposes.
Fig. 2 (a) is the energy band diagram of conventional gallium nitride base laser structure in the direction of growth, and wherein (a) figure is the energy band diagram of reference configuration, and (b) figure is the new construction energy band diagram introducing indium gallium nitrogen insert layer.
Fig. 3 be in the present invention GaN base laser when 120mA electronic current with the distribution schematic diagram of position.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The present invention proposes a kind of GaN base laser, it comprises:
Between the electronic barrier layer and P type ducting layer of described GaN base laser, there is one deck insert layer;
The material of described insert layer is doped indium gallium nitrogen, and its thickness is 2-15nm, and indium component is 0.005-0.05.
The above-mentioned laser that the present invention proposes, due to the introducing of insert layer, band structure is brought the benefit of two aspects: the first, hole is easily injected.The polarised direction of this indium gallium nitrogen insert layer points to n district from p district, and cause insert layer valence band to be bent upwards, hole quasi fermi level more easily enters valence band, the potential barrier faced by injected holes is reduced, finally makes hole easily inject.The second, the effective potential barrier of electronics increases.The polarization of indium gallium nitrogen insert layer makes electronic barrier layer and insert layer interface accumulate more negative electrical charge, impel the Polarimetric enhancement of electronic barrier layer, the total electric field of electronic barrier layer is caused to weaken, make electronic barrier layer that inclined degree can be with to reduce, n district is finally made to be with entire lowering, the effective potential barrier of electronics increases, and electronics is revealed and reduced.
The invention allows for a kind of manufacture method of GaN base laser, as shown in Figure 1, it comprises:
Step 1: make N-shaped limiting layer 11, N-shaped ducting layer 12, Quantum well active district 13, electronic barrier layer 14, insert layer 15, p-type ducting layer 16, p-type limiting layer 17 and P type contact layer 18 on gallium nitride substrate 10 successively;
Step 2: P type contact layer 18 is become ridge with P type limiting layer 17 wet etching or dry etching;
Step 3: grow one deck oxidation mould on the ridge be made into, and adopt the method for photoetching to make p-type Ohmic electrode 19;
Step 4: by thinning for gallium nitride substrate 10, cleaning, and make N-shaped Ohmic electrode 20 above;
Step 5: carry out cleavage, plated film, is finally encapsulated on shell, makes the gallium nitride lasers that a kind of performance improves, completes preparation.
Wherein, the material of substrate 10 is C surface sapphire, SiC or GaN, and the thickness of this substrate 10 is 100-1000 μm.
Wherein, the material of N-shaped limiting layer 11 is the N-shaped aluminum gallium nitride mixing Si, and its al composition is 0.06-0.15, and its thickness is 0.2-1.5 μm.
Wherein, the material of N-shaped ducting layer 12 is N-shaped gallium nitride or the indium gallium nitrogen of mixing Si, and indium component is 0-0.1, and thickness is 0.1-1.2 μm.
Wherein, the 13 quantum well numbers in Quantum well active district are 1-3, and the material of quantum well is indium gallium nitrogen, and quantum well thickness is 2-5nm, and indium component is 0.1-0.2, quantum barrier material gallium nitride or indium gallium nitrogen, the thickness 7-20nm that quantum is built.
Wherein, the material of electronic barrier layer 14 is the aluminum gallium nitride mixing Mg, and thickness is 10-30nm, and al composition is 0.1-0.3.
Wherein, the material of insert layer 15 is the indium gallium nitrogen mixing Mg, and thickness is 2-15nm, and indium component is 0.005-0.05.
Wherein, the material of p-type ducting layer 16 is indium gallium nitrogen or the gallium nitride of mixing Mg, and thickness 0.1-0.8 μm, indium component is 0.01-0.1.
Fig. 2 is the energy band diagram of laser structure in the direction of growth.Fig. 2 (a) figure is the energy band diagram of reference configuration.Fig. 2 (b) figure is the new construction energy band diagram introducing indium gallium nitrogen insert layer.Can find out, after introducing indium gallium nitrogen insert layer, electronic barrier layer and insert layer interface is made to accumulate more electronics, enhance the polarization of insert layer, the total electric field of electronic barrier layer weakens, and inclination can be with to weaken, finally make n district can be with relative p district entire lowering, the effective potential barrier of electronics increases, and namely the effective potential barrier of electronics becomes 215meV from original 184meV.In addition, insert layer polarization can make this layer of valence band be bent upwards, and makes hole more easily enter valence band, and the effective potential barrier in hole is reduced, and namely become 176meV from original 195meV, hole is more easily filled with.
Fig. 3 is that the electronic current when 120mA of laser is with the distribution of position.Red curve makes the distribution of new construction electronic current, and black curve is the electronic current distribution of reference configuration.After introducing indium gallium nitrogen insert layer, n district can be with entire lowering, and the electronic current being injected into quantum well becomes many.Because hole becomes easy injection, the effective potential barrier of electronics increases, and makes the electronics Leakage Current of new construction become less.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a preparation method for GaN base laser, comprises the following steps:
Step 1: make N-shaped limiting layer, N-shaped ducting layer, Quantum well active district, electronic barrier layer, insert layer, p-type ducting layer, p-type limiting layer and P type contact layer on gallium nitride substrate successively;
Step 2: P type contact layer is become ridge with P type limiting layer wet etching or dry etching;
Step 3: grow one deck oxidation mould on the described ridge be made into, and adopt the method for photoetching to make p-type Ohmic electrode;
Step 4: gallium nitride substrate is thinning, cleaning, and N-shaped Ohmic electrode is made above;
Step 5: carry out cleavage, plated film, is finally encapsulated on shell, makes gallium nitride lasers.
2. method according to claim 1, wherein, the material of substrate is C surface sapphire, SiC or GaN, and the thickness of this substrate is 100-1000 μm.
3. method according to claim 1, wherein, the material of N-shaped limiting layer is the N-shaped aluminum gallium nitride mixing Si, and its al composition is 0.06-0.15, and its thickness is 0.2-1.5 μm.
4. method according to claim 1, wherein, the material of N-shaped ducting layer is N-shaped gallium nitride or the indium gallium nitrogen of mixing Si, and indium component is 0-0.1, and thickness is 0.1-1.2 μm.
5. method according to claim 1, wherein, the quantum well number in Quantum well active district is 1-3, the material of quantum well is indium gallium nitrogen, and quantum well thickness is 2-5nm, and indium component is 0.1-0.2, quantum barrier material is gallium nitride or indium gallium nitrogen, and the thickness that quantum is built is 7-20nm.
6. method according to claim 1, wherein, the material of electronic barrier layer is the aluminum gallium nitride mixing Mg, and thickness is 10-30nm, and al composition is 0.1-0.3.
7. method according to claim 1, wherein, the material of insert layer is the indium gallium nitrogen mixing Mg, and thickness is 2-15nm, and indium component is 0.005-0.05.
8. method according to claim 1, wherein, the material of p-type ducting layer is indium gallium nitrogen or the gallium nitride of mixing Mg, and thickness 0.1-0.8 μm, indium component is 0.01-0.1.
9. a GaN base laser, it comprises:
Grow the N-shaped limiting layer on gallium nitride substrate, N-shaped ducting layer, Quantum well active district, electronic barrier layer, p-type ducting layer, p-type limiting layer and P type contact layer successively;
Wherein, between described electronic barrier layer and P type ducting layer, also there is an insert layer.
10. GaN base laser as claimed in claim 9, wherein, the material of described insert layer is doped indium gallium nitrogen, and its thickness is 2-15nm, and indium component is 0.005-0.05.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204567A (en) * | 2017-07-11 | 2017-09-26 | 中国科学院半导体研究所 | Gan base laser and preparation method thereof |
| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
| CN114336270A (en) * | 2020-09-30 | 2022-04-12 | 苏州华太电子技术有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1051070A (en) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | Semiconductor laser |
| WO2008060594A2 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) through multiple extractors |
| CN101540364A (en) * | 2009-04-23 | 2009-09-23 | 厦门大学 | Nitride luminescent device and production method thereof |
| CN102227046A (en) * | 2011-05-25 | 2011-10-26 | 北京化工大学 | GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof |
| CN103956653A (en) * | 2014-05-15 | 2014-07-30 | 中国科学院半导体研究所 | Method for reducing electron leakage of GaN-base blue-violet light end emission laser |
| CN104617487A (en) * | 2015-01-12 | 2015-05-13 | 中国科学院半导体研究所 | Same-temperature growth method of laser quantum well active region on gallium nitride native substrate |
| CN104734015A (en) * | 2015-02-02 | 2015-06-24 | 中国科学院半导体研究所 | GaN-based laser with asymmetric Al component AlGaN limiting layers |
-
2015
- 2015-08-31 CN CN201510548632.6A patent/CN105048285B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1051070A (en) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | Semiconductor laser |
| WO2008060594A2 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) through multiple extractors |
| CN101540364A (en) * | 2009-04-23 | 2009-09-23 | 厦门大学 | Nitride luminescent device and production method thereof |
| CN102227046A (en) * | 2011-05-25 | 2011-10-26 | 北京化工大学 | GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof |
| CN103956653A (en) * | 2014-05-15 | 2014-07-30 | 中国科学院半导体研究所 | Method for reducing electron leakage of GaN-base blue-violet light end emission laser |
| CN104617487A (en) * | 2015-01-12 | 2015-05-13 | 中国科学院半导体研究所 | Same-temperature growth method of laser quantum well active region on gallium nitride native substrate |
| CN104734015A (en) * | 2015-02-02 | 2015-06-24 | 中国科学院半导体研究所 | GaN-based laser with asymmetric Al component AlGaN limiting layers |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204567A (en) * | 2017-07-11 | 2017-09-26 | 中国科学院半导体研究所 | Gan base laser and preparation method thereof |
| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
| CN114336270A (en) * | 2020-09-30 | 2022-04-12 | 苏州华太电子技术有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
| CN114336270B (en) * | 2020-09-30 | 2023-11-24 | 苏州华太电子技术股份有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
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