CN114336270B - Silicon-based semiconductor laser and manufacturing method thereof - Google Patents
Silicon-based semiconductor laser and manufacturing method thereof Download PDFInfo
- Publication number
- CN114336270B CN114336270B CN202011057235.6A CN202011057235A CN114336270B CN 114336270 B CN114336270 B CN 114336270B CN 202011057235 A CN202011057235 A CN 202011057235A CN 114336270 B CN114336270 B CN 114336270B
- Authority
- CN
- China
- Prior art keywords
- silicon
- diode structure
- silicon layer
- light
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 212
- 239000010703 silicon Substances 0.000 title claims abstract description 211
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 202
- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 53
- 230000015556 catabolic process Effects 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 abstract description 17
- 239000007924 injection Substances 0.000 abstract description 17
- 239000002245 particle Substances 0.000 abstract description 5
- 108091006149 Electron carriers Proteins 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
The invention discloses a silicon-based semiconductor laser and a manufacturing method thereof. The laser comprises a first diode structure, a light-emitting active region and a second diode structure, wherein the light-emitting active region is arranged between the first diode structure and the second diode structure, and when a preset reverse bias voltage is applied to the first diode structure and/or the second diode structure, the first diode structure and/or the second diode structure can inject electrons into the light-emitting active region and generate an 'electric field trap' for electrons in the light-emitting active region, so that the electrons are limited in the light-emitting active region. The silicon-based semiconductor laser provided by the invention adopts reverse injection to realize effective collection of electron carriers in a luminescent medium by electron-hole pairs, and can effectively realize particle number inversion of conduction band energy valley electrons and valence band top holes capable of emitting light, thereby realizing electric injection lasing of the silicon-based laser.
Description
Technical Field
The invention relates to a semiconductor laser, in particular to a silicon-based semiconductor laser and a manufacturing method thereof, and belongs to the technical field of semiconductors.
Background
Silicon photonics (Silicon Photonics) is an emerging discipline for implementing optoelectronic function integration into a single chip using silicon-based semiconductor technology. Because the method is based on a mature silicon-based large-scale integrated circuit process with low cost and low power consumption, the method has high integration level and compact structure, and realizes optical interconnection. However, silicon photonics has some problems that limit its application, especially light sources. Silicon-based lasers are a well-established, unsolved worldwide problem because silicon materials are themselves indirect band gaps, and no significant technological breakthrough has yet occurred.
The technical routes of silicon-based semiconductor lasers are mainly divided into two categories: firstly, a light source is manufactured by using a group IV material and a compound thereof, and secondly, the light source is manufactured by introducing a group III-V compound into silicon. To date, a significant breakthrough is not realized in the technical route, and a practical silicon-based semiconductor laser cannot be manufactured. In the second technical route, because III-V compounds are introduced, the silicon-based semiconductor laser cannot be compatible with the existing silicon process, has large-scale mass production difficulty and high cost, and cannot be considered as a real silicon-based semiconductor laser scheme.
The electric injection laser is realized on the silicon substrate through germanium or germanium-silicon medium, so that the electric injection laser can be compatible with a CMOS process on one hand, and a silicon-based electric injection laser can be realized on the other hand, thereby being an ideal way for realizing a silicon-based semiconductor laser and being a key technical bottleneck of silicon photonics. SiGe/Si and Ge/SiGe heterojunction ultrathin quantum structures have been considered as the most viable solutions to this technical challenge, and these material structures are compatible with CMOS processes, such as SiGe BiCMOS device process platforms that are SiGe/Si HBT monolithically integrated with CMOS.
However, for the last 40 years, siGe or Ge/SiGe electroinjection lasers have not seen significant breakthrough, and from a device physical perspective, two obstacles have been mainly encountered: 1. si, siGe and Ge are all indirect bandgap semiconductor materials, and the electron-hole pair has extremely weak direct light-emitting efficiency, which is 4 to 5 orders of magnitude lower than that of III-V group direct bandgap semiconductor materials; 2. the Si/SiGe heterojunction conduction band and the Ge/SiGe heterojunction conduction band are different from the compound semiconductor, the conduction band discontinuity amount of the heterojunction is very small, and even a second-class superlattice can appear, and electrons and holes can not be effectively collected and limited in an ultrathin layer light-emitting area at the same time, so that the population inversion required by laser excitation is difficult to effectively realize in the light-emitting area.
Disclosure of Invention
The invention mainly aims to provide a silicon-based semiconductor laser and a manufacturing method thereof, which are used for overcoming the defects in the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a silicon-based semiconductor laser, which comprises a first diode structure, a light-emitting active region and a second diode structure, wherein the light-emitting active region is arranged between the first diode structure and the second diode structure, the first diode structure and the second diode structure comprise pn diodes or Schottky diodes, when a preset reverse bias voltage is applied to the first diode structure and/or the second diode structure, a large amount of electrons generated by reverse breakdown of the diodes can be injected into the light-emitting active region by the first diode structure and/or the second diode structure, and an electric field trap is generated on the electrons in the light-emitting active region by a reverse electric field generated by the reverse bias voltage, so that the electrons are limited in the light-emitting active region.
The embodiment of the invention also provides a manufacturing method of the silicon-based semiconductor laser, which comprises the following steps: and sequentially growing a first diode structure or a semiconductor structure of the first diode structure, a light-emitting active region, a second diode structure or a semiconductor structure of the second diode structure on the silicon substrate.
Compared with the prior art, the invention has the advantages that: according to the silicon-based semiconductor laser provided by the embodiment of the invention, the effective collection of electron carriers in a luminescent medium by electron-hole pairs is realized by adopting reverse injection, and meanwhile, the particle number inversion of conduction band energy valley electrons and valence band top holes which can emit light can be effectively realized, so that the electric injection lasing of the silicon-based laser is realized; and the epitaxial structure of the three-terminal silicon-based semiconductor laser provided by the embodiment of the invention can be compatible with the CMOS large-scale integrated circuit process, so that silicon-based optoelectronics and silicon-based microelectronics can be combined.
Drawings
FIG. 1 is a schematic diagram of an electroluminescence mechanism of a silicon-based semiconductor laser according to an exemplary embodiment of the present invention;
FIG. 2 is a schematic diagram of a silicon-based semiconductor laser according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic diagram of another silicon-based semiconductor laser according to an exemplary embodiment of the present invention;
FIG. 4 is a schematic diagram of another silicon-based semiconductor laser according to an exemplary embodiment of the present invention;
FIG. 5 is a schematic diagram of the operating energy bands of a silicon-based semiconductor laser without reverse bias in accordance with an exemplary embodiment of the present invention;
FIG. 6 is a schematic diagram of the operating energy bands (electric field traps) of a silicon-based semiconductor laser in a reverse bias mode according to an exemplary embodiment of the present invention;
FIG. 7 is a schematic diagram of the operating band of a dual-sided reverse breakdown injection silicon-based laser in an exemplary embodiment of the invention;
FIGS. 8a and 8b are energy band diagrams of germanium under unstrained and tensile strain conditions, respectively;
FIG. 9 is a schematic energy band diagram of a silicon-based semiconductor laser light emitting active region according to an exemplary embodiment of the present invention;
fig. 10 is a schematic diagram of a silicon-based semiconductor laser edge-emitting laser according to an exemplary embodiment of the present invention.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
The silicon-based semiconductor laser provided by the embodiment of the invention adopts reverse injection to realize effective collection of electron carriers in a luminescent medium by electron-hole pairs, and can effectively realize particle number inversion of conduction band energy valley electrons and valence band top holes capable of emitting light, thereby realizing electric injection lasing of the silicon-based laser; and the epitaxial structure and the manufacturing method of the three-terminal silicon-based semiconductor laser provided by the embodiment of the invention can be compatible with the CMOS large-scale integrated circuit process, and can combine silicon-based optoelectronics with silicon-based microelectronics.
The embodiment of the invention provides a silicon-based semiconductor laser, which comprises a first diode structure, a light-emitting active region and a second diode structure, wherein the light-emitting active region is arranged between the first diode structure and the second diode structure, the first diode structure and the second diode structure comprise pn diodes or Schottky diodes, when a preset reverse bias voltage is applied to the first diode structure and/or the second diode structure, a large amount of electrons generated by reverse breakdown of the diodes can be injected into the light-emitting active region by the first diode structure and/or the second diode structure, and an electric field trap is generated on the electrons in the light-emitting active region by a reverse electric field generated by the reverse bias voltage, so that the electrons are limited in the light-emitting active region.
In some more specific embodiments, the first diode structure is a pn diode structure, and the first diode structure includes a first silicon layer, a second silicon layer and a third silicon layer which are sequentially stacked, and a first SiGe layer and a light-emitting active region are sequentially stacked on the third silicon layer, where the first silicon layer and the light-emitting active region are of a first conductivity type, and the second silicon layer, the third silicon layer and the first SiGe layer are of a second conductivity type;
or, the first diode structure is a schottky diode structure, the first diode structure comprises a first metal layer, a second silicon layer and a third silicon layer which are sequentially stacked, and a first SiGe layer and a light-emitting active region are sequentially stacked on the third silicon layer, wherein the light-emitting active region is of a first conductivity type, and the second silicon layer, the third silicon layer and the first SiGe layer are of a second conductivity type.
Further, the second silicon layer and the third silicon layer are respectively n + Silicon layer, n - A silicon layer of n - A SiGe layer having a p-type light emitting active region ++ SiGe/Ge multiple quantum well light emitting active region.
Further, the first silicon layer is p ++ And a type silicon layer.
In some more specific embodiments, the silicon-based semiconductor laser further comprises a silicon substrate, and the first silicon layer is formed on the silicon substrate.
In some more specific embodiments, the second diode structure is a pn diode structure, the second diode structure includes a fourth silicon layer, a fifth silicon layer and a sixth silicon layer stacked in sequence, and the light emitting active region is sequentially stacked with a second SiGe layer and a fourth silicon layer, where the sixth silicon layer and the light emitting active region are of the first conductivity type, and the fourth silicon layer, the fifth silicon layer and the second SiGe layer are of the second conductivity type;
or the second diode structure is a schottky diode structure, the second diode structure comprises a fourth silicon layer, a fifth silicon layer and a second metal layer which are sequentially stacked, and a second SiGe layer and a fourth silicon layer are sequentially stacked on the light-emitting active region, wherein the light-emitting active region is of a first conductivity type, and the fourth silicon layer, the fifth silicon layer and the second SiGe layer are of a second conductivity type.
Further, the fourth silicon layer and the fifth silicon layer are respectively n - Silicon layer, n + A silicon layer of n type - A SiGe layer having a p-type light emitting active region ++ SiGe/Ge multiple quantum well light emitting active region.
Further, the sixth silicon layer is p ++ And a type silicon layer.
Further, the light emitting active region is connected to a high potential, the first silicon layer or the first metal layer in the first diode structure is connected to a low potential, and the sixth silicon layer or the second metal layer in the second diode structure is connected to a low potential.
Further, at least part of the structure layer in the first diode structure is formed as a first waveguide structure.
Further, at least part of the structure layer in the second diode structure is formed as a second waveguide structure.
Further, the first diode structure, the light emitting active region and the second diode structure are integrally arranged.
Further, the silicon-based semiconductor laser is a three-terminal semiconductor laser device.
Further, laser light generated by the silicon-based semiconductor laser is emitted from cleaved side surfaces of the silicon (100).
The embodiment of the invention also provides a manufacturing method of the silicon-based semiconductor laser, which comprises the following steps: and sequentially growing a first diode structure or a semiconductor structure of the first diode structure, a light-emitting active region, a second diode structure or a semiconductor structure of the second diode structure on the silicon substrate.
Further, the manufacturing method further comprises the following steps: removing the silicon substrate, and manufacturing a first metal layer matched with the semiconductor structure of the first diode structure to form a first diode;
further, the manufacturing method further comprises the following steps: and manufacturing a second metal layer matched with the semiconductor structure of the second diode structure to form the second diode.
Further, the manufacturing method further comprises the following steps: and processing at least part of the structural layers in the first diode structure to form a first waveguide structure.
Further, the manufacturing method further comprises the following steps: and processing at least part of the structural layer in the second diode structure so as to form a second waveguide structure.
The technical scheme, the implementation process and the principle thereof are further explained with reference to the attached drawings.
The embodiment of the invention provides an epitaxial structure and a manufacturing method of a silicon-based semiconductor laser, and the silicon-based semiconductor laser can be manufactured and formed on a process compatible with the existing silicon-based semiconductor, so that the technical problem that the laser cannot be manufactured in the silicon-based process effectively in the silicon photonics at present is solved.
Referring to fig. 2, a silicon-based semiconductor laser includes p stacked sequentially in a thickness direction on a silicon substrate ++ Silicon layer, n + Silicon layer, n - Silicon layer, n - SiGe layer, p ++ SiGe/Ge multiple quantum well, n - SiGe layer, n - Silicon layer, n + Silicon layer, p ++ A silicon layer of p ++ Silicon layer and n + Silicon layer, n - The silicon layers are combined to form a pn diode, p ++ A SiGe/Ge multiple quantum well sandwiched between two of the n-type quantum wells - Between SiGe layers, wherein the n - The SiGe layer serves as a transition layer for the silicon-based semiconductor laser.
Referring to fig. 3, a silicon-based semiconductor laser includes p stacked sequentially in a thickness direction on a silicon substrate ++ Silicon layer, n + Silicon layer, n - Silicon layer, n - SiGe layer, p ++ SiGe/Ge multiple quantum well, n - SiGe layer, n - Silicon layer, n + A silicon layer, a metal layer, p ++ Silicon layer and n + Silicon layer, n - The metal layer and n are combined to form a pn diode + Silicon layer, n - The silicon layers are combined to form a Schottky diode, p ++ A SiGe/Ge multiple quantum well sandwiched between two of the n-type quantum wells - Between the SiGe layers.
Referring to FIG. 4, a silicon-based semiconductor laser includes metal layers, n, stacked in sequence in a thickness direction + Silicon layer, n - Silicon layer, n - SiGe layer, p ++ SiGe/Ge multiple quantum well, n - SiGe layer, n - Silicon layer, n + A silicon layer, a metal layer, the metal layer and n + Silicon layer, n - Silicon layer, combined to form schottky diode, p ++ A SiGe/Ge multiple quantum well sandwiched between two of the n-type quantum wells - Between the SiGe layers.
The manufacturing method of the silicon-based semiconductor laser provided by the embodiment of the invention at least comprises the following steps:
(1) The SiGe/Ge quantum well material system is adopted, and the material system can generate effective electroluminescence;
unlike available technology, which adopts high concentration doped n-type impurity in Ge luminous medium, the present invention adopts modulation doping mode to fill p-type hole in high concentration, and the modulation doping mode may be used in doping different concentration and material in different area; the silicon-based semiconductor laser provided by the invention is characterized in that a large amount of electrons generated by reverse breakdown of a diode (which can be a pn junction diode or a Schottky diode) are injected into a high-energy gamma valley of Ge, the electrons are relaxed to the gamma valley, the relaxation process is shown as a process 0 in the figure 1, and the time of the process 0 is only in the sub-picosecond order; electrons at the bottom of the gamma valley are rapidly transferred into the L energy valley through electrons between the energy valleys, as shown in a process 1 in fig. 1, wherein the process 1 is only in the picosecond order; the electrons at the bottom of the L energy valley have only one exit, i.e., recombine with holes at the valence band apex Γ by phonon-assisted luminescence, however, this process (process 2) is very slow, as shown in process 2 in FIG. 1, process 2 requires on the order of nearly microseconds.
Since electrons in the L-valleys escape almost as soon as possible (process 1 is nearly 6 orders of magnitude faster than process 2), if the number of electrons injected into Ge reaches a certain level (as long as process 1 is at a rate greater than process 2 and lasts long enough), the energy state of the L-valleys is easily filled, the quasi-fermi level in the conduction band can be raised to exceed the Γ -valleys, so that electrons in the Γ -valleys of the conduction band can recombine with holes at the Γ -peaks of the valence band, as shown in process 3 in fig. 1, process 3 can satisfy conservation of momentum, emit photons, i.e., realize electroluminescence, and process 3 is in nanosecond order.
(2) Providing a reasonable quantum well structure, taking SiGe/Ge multi-quantum wells as a light-emitting active region of a semiconductor laser, and enabling the light-emitting active region to be distributed in n-type doped silicon to form a p-n-p-n-p or p-n-p-n-m (metal) or m-n-p-n-m device structure;
in this structure, as shown in fig. 2, the top electrode (i.e., the diode stacked above the SiGe/Ge multiple quantum well, corresponding to the aforementioned second diode or second diode structure, the same applies hereinafter) and the bottom electrode (i.e., the diode stacked below the SiGe/Ge multiple quantum well, corresponding to the aforementioned first diode or first diode structure, the same applies hereinafter) may be pn diodes, so that the semiconductor laser forms a p-n-p-n-p structure, and an ohmic electrode is fabricated in the p-type region, and the n-type region is suspended, thereby forming a three-terminal device structure.
Alternatively, as shown in fig. 3, the top electrode may be a schottky diode and the bottom electrode a pn diode, so that the semiconductor laser forms a p-n-p-n-m (m represents a metal, and is the same below) structure.
Alternatively, as shown in fig. 4, the top and bottom electrodes may also each be a schottky diode, thereby forming an m-n-p-n-m structure for the semiconductor laser.
In the following, only the pn diode will be described as an example of the top electrode and the bottom electrode, but of course, the top electrode and the bottom electrode of the present invention may be pn diodes or schottky diodes.
(3) Referring to fig. 2, taking a semiconductor laser with a p-n-p-n-p device structure as an example, a highly doped p-type light emitting active region is sandwiched between two n-type regions, and the injection of holes is realized by directly connecting the outer electrode to a high potential, and the other two p-type regions are connected to a low potential through a p-type ohmic electrode.
In the semiconductor laser structure shown in fig. 2, the pn diode near the light emitting active region is biased by forward voltage to ensure that the discontinuity amount of the valence band of the SiGe/Ge heterojunction is large enough to ensure that holes injected into the light emitting active region must be confined in the SiGe/Ge multiple quantum well and cannot diffuse into the n-type Si region because of Si 1-x Ge x Si, x is more than or equal to 0 and less than or equal to 1, and the discontinuous amount of the valence band of the system can reach about 0.5eV, which is enough to limit holes in the luminous active region.
(4) Referring again to fig. 2, in the p-n-p-n-p device structure shown in fig. 2, two pn diodes near the periphery are reverse voltage biased, and the two pn diodes must be designed to operate for reverse breakdown so that they can be relatively easily broken down under the operating condition (the present invention is not limited by the mechanism of reverse breakdown, such as avalanche breakdown or zener breakdown, etc.), and a large amount of electrons will be injected into the light emitting active region due to reverse breakdown.
It should be noted that, the pn diode or the schottky diode which is reversely biased increases the potential barrier of the conduction band electron, and the potential barrier and the conduction band on both sides form an energy trap of the conduction band electron, because the energy trap is established by applying a reverse electric field, the structure can be called an "electric field trap" (Electric Field Well); in the electric field trap, electrons generated by reverse breakdown can be effectively collected by the light-emitting active region because the light-emitting active region is clamped between two reverse pn diodes, so that the concentration of conduction band electrons is rapidly improved.
Since both L- Γ and X- Γ transitions of electrons violate conservation of momentum, the recombination lifetime is extremely long and almost cannot occur within an effective time, so that the only way for electrons in the conduction band is to directly band gap luminescence recombination with holes in the luminescence active region, i.e. Γ - Γ luminescence recombination transition occurs, if the reverse breakdown injection rate is large enough, the quasi fermi level of conduction band electrons can be raised to the Γ level covering the conduction band, and Γ - Γ luminescence recombination transition can be effectively realized.
In the silicon-based semiconductor laser provided by the embodiment of the invention, because the conduction band discontinuity of the germanium-silicon system is smaller, in order to prevent electrons injected into the light-emitting active region from escaping, so that more opportunities for gamma-gamma light-emitting composite transition occur, reverse bias is required to be added to pn junctions or Schottky junctions at two sides of the light-emitting active region, the potential barrier of electrons from the active region is improved, the probability of electrons escaping from the active region is reduced, and the electron escape is limited by utilizing an electric field trap.
Specifically, when a reverse bias voltage is applied to the first diode structure and/or the second diode structure, the first diode structure and/or the second diode structure can operate in a reverse breakdown mode, generate a large amount of electrons, and inject the electrons into the light emitting active region; and the reverse electric field established by the reverse bias voltage applied across the first diode structure and/or the second diode structure is capable of forming an electric field trap, confining electrons to the light emitting active region.
Referring to fig. 5, since the discontinuity of conduction band in the sige system is small, electrons injected reversely from the left side as shown in fig. 5 easily cross the lower barrier on the right side and escape from the light-emitting active region to enter the p++ region on the right side, thereby reducing the probability of occurrence of Γ - Γ light-emitting recombination transition between the active region and holes. In order to improve the residence time of electrons injected into the light-emitting active region from the left side in the light-emitting active region and improve the probability of gamma-gamma light-emitting recombination, as shown in fig. 6, the reverse bias voltage is applied to the pn diode at the right side of the light-emitting active region, so that the potential barrier required by the electrons in the light-emitting active region to escape is improved, an electric field trap is formed, the residence time of the electrons in the light-emitting active region is increased, and the light-emitting efficiency is improved.
Referring to fig. 6 again, the semiconductor laser shown in fig. 6 adopts single-side injection, electrons in the light-emitting active region are injected by the reverse breakdown mechanism of the pn diode at the left side, and holes are injected by the external electrode of the light-emitting active region; the pn diode on the right is reverse biased to establish a potential barrier to prevent electrons from escaping from the light emitting active region. Further, the right pn diode may also be designed to operate in a reverse breakdown mode, where electrons may also be injected into the light emitting active region by the reverse breakdown mechanism by the right pn diode; the principle of the silicon-based semiconductor laser adopting the double-sided reverse breakdown injection can be referred to as fig. 7.
(5) In the silicon-based semiconductor laser with the p-n-p-n-p device structure provided by the embodiment of the invention, the silicon substrates and the silicon doped layers at two sides of the light-emitting active region become the optical waveguide of the silicon-based semiconductor laser, and photon leakage generated by the light-emitting active region of the optical waveguide region is inhibited.
Example 1
In order to make the silicon-based semiconductor laser provided by the embodiment of the invention easier to generate the gamma-gamma luminescence composite transition, the energy of the conduction band gamma energy valley needs to be reduced as much as possible, so that the conduction band gamma energy valley is as close as possible to the L energy valley, and even is lower than the L energy valley. In this embodiment, germanium and silicon are selected to make up the quantum well system.
As shown in fig. 8a and 8b, fig. 8a and 8b show energy band diagrams of germanium under unstrained and tensile strain conditions, respectively, wherein the energy band of germanium is as shown in fig. 8 (a) and the energy difference between Γ and L energy valleys is Δe1=0.178 eV when the germanium is unstrained; under tensile strain, the energy difference between the gamma energy valley and the L energy valley of germanium is delta E2, and can be reduced to zero, so that the germanium-silicon system becomes a direct band gap semiconductor; therefore, in this embodiment, by changing the band structure of the germanium-silicon system by tensile stress, the energy difference between Γ energy valley and L energy valley can be reduced, and the light emitting efficiency of the silicon-based semiconductor laser of the present invention can be improved.
In the present embodiment, si is used as 1-x Ge x /Si 1-y Ge y Quantum well system as light emitting active region, where x<0.85<y, FIG. 9 shows the hair in this embodimentAn optically active region band diagram wherein in region (III) due to electron injection, the electron quasi-fermi energy level of the system is higher than the Γ energy valley of germanium, so that a large number of electrons can undergo Γ - Γ luminescence recombination with holes near the valence band, thereby emitting photons; in the region (II) and the region (IV), the electron quasi-fermi energy level of the system is only higher than the X energy valley of germanium, but lower than the L energy valley and the gamma energy valley, and electrons in the X energy valley cannot be effectively compounded due to the fact that wave vectors of the electrons are inconsistent with the gamma energy valley in the valence band, and the wave vector selection rule is not met; the L energy valley and the gamma energy valley are greatly higher than the electron quasi-fermi energy level, and no electron filling exists, so that recombination cannot occur; thus, the region in the system where Γ - Γ light emission recombination can effectively occur is in regions (I) and (III).
As shown in fig. 10, the silicon-based semiconductor laser in this embodiment emits from the cleaved side of the silicon (100), in which the silicon substrate and the silicon doped layer on both sides of the light emitting active region serve as the optical waveguide of the silicon-based semiconductor laser, and the photon leakage generated in the light emitting active region of the optical waveguide region is suppressed, so that the silicon-based semiconductor laser provided in the embodiment of the invention effectively realizes the respective confinement of photons and electron hole carriers, improves the optical gain in the laser resonator, and realizes lasing.
The silicon-based semiconductor laser provided by the embodiment of the invention has a p-n-p-n-p or p-n-p-n-m (metal) or m-n-p-n-m structure, and is a three-terminal semiconductor laser device.
The silicon-based semiconductor laser provided by the embodiment of the invention utilizes electrons generated by reverse breakdown (avalanche breakdown or zener breakdown) of a pn diode to realize electron injection into a light-emitting active region; electrons are limited in the light-emitting active region by utilizing the electric field trap, so that the electrons are prevented from escaping, and the efficiency of direct band gap light-emitting recombination of electrons and holes in the light-emitting active region is improved.
The silicon-based semiconductor laser provided by the embodiment of the invention realizes hole injection into a light-emitting active region by utilizing the transport of a transverse carrier in a p-n-p-n-p or p-n-p-n-m or m-n-p-n-m structure middle p-type region; the injected hole carriers are limited to the active region by utilizing the discontinuous quantity of valence bands of the n-type region and the middle p-type region, so that the inversion of the number of particles of laser excitation can be satisfied.
According to the silicon-based semiconductor laser provided by the embodiment of the invention, electrons are limited in the active region by utilizing potential barriers generated by reverse bias of the diode, so that effective collection of injected electron carriers is realized, the quasi-Fermi energy level of conduction band electrons is improved to the direct energy valley of the conduction band of the active region, and further the particle number inversion and laser excitation are realized; .
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.
Claims (18)
1. A silicon-based semiconductor laser, comprising a first diode structure, a light-emitting active region and a second diode structure, wherein the light-emitting active region is arranged between the first diode structure and the second diode structure, the first diode structure and the second diode structure comprise pn diodes or schottky diodes, when a preset reverse bias voltage is applied to the first diode structure and/or the second diode structure, the first diode structure and/or the second diode structure can inject electrons into the light-emitting active region by using a large amount of electrons generated by reverse breakdown of the diode, and generate an electric field trap for the electrons in the light-emitting active region by using a reverse electric field generated by the reverse bias voltage, so that the electrons are limited to the light-emitting active region.
2. A silicon-based semiconductor laser as defined in claim 1, wherein: the first diode structure is a pn diode structure, the first diode structure comprises a first silicon layer, a second silicon layer and a third silicon layer which are sequentially stacked, and a first SiGe layer and a light-emitting active area are sequentially stacked on the third silicon layer, wherein the first silicon layer and the light-emitting active area are of a first conduction type, and the second silicon layer, the third silicon layer and the first SiGe layer are of a second conduction type;
or, the first diode structure is a schottky diode structure, the first diode structure comprises a first metal layer, a second silicon layer and a third silicon layer which are sequentially stacked, and a first SiGe layer and a light-emitting active region are sequentially stacked on the third silicon layer, wherein the light-emitting active region is of a first conductivity type, and the second silicon layer, the third silicon layer and the first SiGe layer are of a second conductivity type.
3. A silicon-based semiconductor laser as defined in claim 2, wherein: the second silicon layer and the third silicon layer are respectively n + Silicon layer, n - A silicon layer of n - A SiGe layer having a p-type light emitting active region ++ SiGe/Ge multiple quantum well light emitting active region.
4. A silicon-based semiconductor laser as claimed in claim 3 wherein: the first silicon layer is p ++ And a type silicon layer.
5. A silicon-based semiconductor laser as defined in claim 2, further comprising a silicon substrate, wherein the first silicon layer is formed on the silicon substrate.
6. A silicon-based semiconductor laser as defined in claim 1, wherein: the second diode structure is a pn diode structure, the second diode structure comprises a fourth silicon layer, a fifth silicon layer and a sixth silicon layer which are sequentially stacked, and a second SiGe layer and a fourth silicon layer are sequentially stacked on the light-emitting active region, wherein the sixth silicon layer and the light-emitting active region are of a first conduction type, and the fourth silicon layer, the fifth silicon layer and the second SiGe layer are of a second conduction type;
or the second diode structure is a schottky diode structure, the second diode structure comprises a fourth silicon layer, a fifth silicon layer and a second metal layer which are sequentially stacked, and a second SiGe layer and a fourth silicon layer are sequentially stacked on the light-emitting active region, wherein the light-emitting active region is of a first conductivity type, and the fourth silicon layer, the fifth silicon layer and the second SiGe layer are of a second conductivity type.
7. A silicon-based semiconductor laser as defined in claim 6, wherein: the fourth silicon layer and the fifth silicon layer are respectively n - Silicon layer, n + A silicon layer of n type - A SiGe layer having a p-type light emitting active region ++ SiGe/Ge multiple quantum well light emitting active region.
8. A silicon-based semiconductor laser as defined in claim 7, wherein: the sixth silicon layer is p ++ And a type silicon layer.
9. A silicon-based semiconductor laser as defined in claim 1, wherein: the light emitting active region is connected with high potential, the first silicon layer or the first metal layer in the first diode structure is connected with low potential, and the sixth silicon layer or the second metal layer in the second diode structure is connected with low potential.
10. A silicon-based semiconductor laser as defined in claim 1, wherein: at least part of the structure layers in the first diode structure are formed as a first waveguide structure and/or at least part of the structure layers in the second diode structure are formed as a second waveguide structure.
11. A silicon-based semiconductor laser as defined in claim 1, wherein: the first diode structure, the light emitting active region and the second diode structure are integrally arranged.
12. A silicon-based semiconductor laser as defined in claim 1, wherein: the silicon-based semiconductor laser is a three-terminal semiconductor laser device.
13. A silicon-based semiconductor laser as defined in claim 1, wherein: the laser light generated by the silicon-based semiconductor laser is emitted from cleaved side surfaces of silicon (100).
14. A method of fabricating a silicon-based semiconductor laser as defined in any one of claims 1 to 13, comprising:
and sequentially growing a first diode structure or a semiconductor structure of the first diode structure, a light-emitting active region, a second diode structure or a semiconductor structure of the second diode structure on the silicon substrate.
15. The method of manufacturing as set forth in claim 14, further comprising: and removing the silicon substrate, and manufacturing a first metal layer matched with the semiconductor structure of the first diode structure to form the first diode.
16. The method of manufacturing of claim 14, further comprising: and manufacturing a second metal layer matched with the semiconductor structure of the second diode structure to form the second diode.
17. The method of manufacturing as set forth in claim 14, further comprising: and processing at least part of the structural layers in the first diode structure to form a first waveguide structure.
18. The method of manufacturing of claim 14, further comprising: and processing at least part of the structural layer in the second diode structure so as to form a second waveguide structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011057235.6A CN114336270B (en) | 2020-09-30 | 2020-09-30 | Silicon-based semiconductor laser and manufacturing method thereof |
| PCT/CN2020/139881 WO2022068104A1 (en) | 2020-09-30 | 2020-12-28 | Silicon-based semiconductor laser and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011057235.6A CN114336270B (en) | 2020-09-30 | 2020-09-30 | Silicon-based semiconductor laser and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114336270A CN114336270A (en) | 2022-04-12 |
| CN114336270B true CN114336270B (en) | 2023-11-24 |
Family
ID=80951024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011057235.6A Active CN114336270B (en) | 2020-09-30 | 2020-09-30 | Silicon-based semiconductor laser and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114336270B (en) |
| WO (1) | WO2022068104A1 (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6151347A (en) * | 1996-01-17 | 2000-11-21 | Nortel Networks Corporation | Laser diode and method of fabrication thereof |
| CN101034725A (en) * | 2006-03-08 | 2007-09-12 | 中国科学院半导体研究所 | Fork structure silicon LED made with the standard CMOS technology |
| WO2009095886A2 (en) * | 2008-02-01 | 2009-08-06 | Insiava (Pty) Limited | Semiconductor light emitting device comprising heterojunction |
| CN101557074A (en) * | 2008-04-10 | 2009-10-14 | 电子科技大学 | Silica-based germanium electrical injection laser and production method thereof |
| CN101777609A (en) * | 2009-01-14 | 2010-07-14 | 中国科学院半导体研究所 | Silica-based forward implantation light-emitting device and manufacturing method thereof |
| WO2011037574A1 (en) * | 2009-09-25 | 2011-03-31 | Hewlett-Packard Development Company, L.P. | Silicon-germanium, quantum-well, light-emitting diode |
| CN102405536A (en) * | 2009-03-23 | 2012-04-04 | 惠普开发有限公司 | Indirect-bandgap-semiconductor light-emitting diode |
| CN102412297A (en) * | 2011-08-16 | 2012-04-11 | 桂林电子科技大学 | Silicon-based power device structure based on substrate bias technology |
| CN103996760A (en) * | 2014-06-12 | 2014-08-20 | 天津大学 | Silicon substrate forward injection method and light emitting device compatible with standard CMOS technology |
| CN105048285A (en) * | 2015-08-31 | 2015-11-11 | 中国科学院半导体研究所 | Method for improving the performance of gallium nitride laser |
| CN106229813A (en) * | 2016-09-21 | 2016-12-14 | 中国科学院半导体研究所 | Silicon-based lateral injection laser and preparation method thereof |
| CN109844967A (en) * | 2016-09-06 | 2019-06-04 | 南非大学 | 650NM silicon Avalanche Light Emitting Diodes |
| CN110429474A (en) * | 2019-07-31 | 2019-11-08 | 天津工业大学 | A kind of complete four races silicon substrate C-band semiconductor laser |
| CN111564758A (en) * | 2020-05-27 | 2020-08-21 | 中国科学院半导体研究所 | Low-loss silicon-based laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006100975A1 (en) * | 2005-03-23 | 2006-09-28 | Nec Corporation | Tunnel junction light emitting element |
| US8406266B2 (en) * | 2011-08-31 | 2013-03-26 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
| CN106356716B (en) * | 2016-11-04 | 2018-12-18 | 中国科学院半导体研究所 | A kind of wide spectrum thyristor laser of GaAs base band gate electrode |
| JP7073685B2 (en) * | 2017-11-22 | 2022-05-24 | 富士フイルムビジネスイノベーション株式会社 | Luminous components, printheads and image forming equipment |
| EP3540879A1 (en) * | 2018-03-15 | 2019-09-18 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated tunnel junction |
| CN111370996A (en) * | 2020-03-20 | 2020-07-03 | 北京嘉圣光通科技有限公司 | Vertical cavity surface emitting laser |
-
2020
- 2020-09-30 CN CN202011057235.6A patent/CN114336270B/en active Active
- 2020-12-28 WO PCT/CN2020/139881 patent/WO2022068104A1/en not_active Application Discontinuation
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6151347A (en) * | 1996-01-17 | 2000-11-21 | Nortel Networks Corporation | Laser diode and method of fabrication thereof |
| CN101034725A (en) * | 2006-03-08 | 2007-09-12 | 中国科学院半导体研究所 | Fork structure silicon LED made with the standard CMOS technology |
| WO2009095886A2 (en) * | 2008-02-01 | 2009-08-06 | Insiava (Pty) Limited | Semiconductor light emitting device comprising heterojunction |
| CN101557074A (en) * | 2008-04-10 | 2009-10-14 | 电子科技大学 | Silica-based germanium electrical injection laser and production method thereof |
| CN101777609A (en) * | 2009-01-14 | 2010-07-14 | 中国科学院半导体研究所 | Silica-based forward implantation light-emitting device and manufacturing method thereof |
| CN102405536A (en) * | 2009-03-23 | 2012-04-04 | 惠普开发有限公司 | Indirect-bandgap-semiconductor light-emitting diode |
| WO2011037574A1 (en) * | 2009-09-25 | 2011-03-31 | Hewlett-Packard Development Company, L.P. | Silicon-germanium, quantum-well, light-emitting diode |
| CN102412297A (en) * | 2011-08-16 | 2012-04-11 | 桂林电子科技大学 | Silicon-based power device structure based on substrate bias technology |
| CN103996760A (en) * | 2014-06-12 | 2014-08-20 | 天津大学 | Silicon substrate forward injection method and light emitting device compatible with standard CMOS technology |
| CN105048285A (en) * | 2015-08-31 | 2015-11-11 | 中国科学院半导体研究所 | Method for improving the performance of gallium nitride laser |
| CN109844967A (en) * | 2016-09-06 | 2019-06-04 | 南非大学 | 650NM silicon Avalanche Light Emitting Diodes |
| CN106229813A (en) * | 2016-09-21 | 2016-12-14 | 中国科学院半导体研究所 | Silicon-based lateral injection laser and preparation method thereof |
| CN110429474A (en) * | 2019-07-31 | 2019-11-08 | 天津工业大学 | A kind of complete four races silicon substrate C-band semiconductor laser |
| CN111564758A (en) * | 2020-05-27 | 2020-08-21 | 中国科学院半导体研究所 | Low-loss silicon-based laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114336270A (en) | 2022-04-12 |
| WO2022068104A1 (en) | 2022-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6369403B1 (en) | Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer | |
| EP0433542B1 (en) | Optoelectronic devices | |
| US20070227588A1 (en) | Enhanced tunnel junction for improved performance in cascaded solar cells | |
| EP2377171B1 (en) | Light emitting device with encapsulated reach-through region | |
| TWI475719B (en) | Semiconductor light emitting device comprising heterojunction | |
| EP2919282A1 (en) | Nitride semiconductor stacked body and semiconductor light emitting device | |
| CN115398761A (en) | Two-dimensional photonic crystal laser | |
| JPH07111339A (en) | Surface emission type semiconductor light emitting device | |
| JP4288030B2 (en) | Semiconductor structure using group III nitride quaternary material system | |
| CN114336270B (en) | Silicon-based semiconductor laser and manufacturing method thereof | |
| US7103080B2 (en) | Laser diode with a low absorption diode junction | |
| JP2003519931A (en) | Group III nitride semiconductor structure with suppressed phase separation | |
| KR20100070074A (en) | Light emitting diode manufacture method | |
| KR100818632B1 (en) | Intersubband transition semiconductor laser | |
| JP2003519930A (en) | Group III nitride semiconductor structure with suppressed phase separation | |
| US20130121361A1 (en) | Interband Cascade Laser Amplifier Medium | |
| JP2941270B1 (en) | Super lattice semiconductor light emitting device | |
| JPH0632343B2 (en) | Semiconductor laser | |
| JPH07335934A (en) | Optical semiconductor device and its manufacture | |
| JPS63152180A (en) | Photo thyristor | |
| Colinge et al. | Heterojunction Devices | |
| Choi et al. | Vertical-injection depleted optical thyristor laser diode for optical communication systems | |
| JP2018152458A (en) | Light-emitting diode | |
| JPH05211348A (en) | Injection semiconductor light-emitting element | |
| JPH0330486A (en) | Multi quantum well light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 215000 10-1f, creative industry park, 328 Xinghu street, Suzhou Industrial Park, Jiangsu Province Applicant after: Suzhou Huatai Electronic Technology Co.,Ltd. Address before: 215000 10-1f, creative industry park, 328 Xinghu street, Suzhou Industrial Park, Jiangsu Province Applicant before: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Yaohui Inventor after: Liu Wei Inventor before: Zhang Yaohui Inventor before: Ma Siguang Inventor before: Liu Wei |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |