CN106229813A - Silicon-based lateral injection laser and preparation method thereof - Google Patents
Silicon-based lateral injection laser and preparation method thereof Download PDFInfo
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- CN106229813A CN106229813A CN201610836551.0A CN201610836551A CN106229813A CN 106229813 A CN106229813 A CN 106229813A CN 201610836551 A CN201610836551 A CN 201610836551A CN 106229813 A CN106229813 A CN 106229813A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Abstract
A kind of silicon-based lateral injection laser and preparation method thereof, this silicon-based lateral injection laser, including: a silicon substrate, the intermediate fabrication above this silicon substrate has waveguide groove, and above this silicon substrate, the both sides of waveguide groove are formed with p-type doped region and N-shaped doped region；One silicon dioxide Window layer, it is produced on the part surface of silicon substrate, and the corresponding described p-type doped region of this silicon dioxide Window layer and the above of N-shaped doped region have side window；One slab waveguide, is grown in the waveguide groove of silicon substrate；One insulating medium layer, it is produced on the surface of slab waveguide, and covers the surface of silicon dioxide Window layer；One p-electrode, in a side window of its silicon dioxide Window layer being produced on p-type doped region；One n-electrode, in the opposite side window of its silicon dioxide Window layer being produced on N-shaped doped region.The present invention can improve the compatibility of itself and silicon CMOS technology.
Description
Technical field
The present invention relates to semiconductor laser field, particularly relate to a kind of silicon-based lateral injection laser and preparation thereof
Method.
Technical background
Along with the integrated level of silicon integrated circuit is more and more higher, the speed of information transmission is increasingly faster, and traditional electrical interconnection is
Show the limitation of its technology, it is impossible to meet the demand of high bandwidth, low-power consumption.And light network has high speed, high bandwidth, low
The features such as power consumption, therefore, people wish to realize between light network, even chip over short and in chip urgently
The silicon-based optical interconnection in portion.In silicon-based optical interconnection in most important elemental device in addition to silica-based light source, other device is existing
Can realize under the conditions of the silicon technology in stage.This makes efficient silica-based light source become the mesh most challenged in silicon-based optical interconnection
Mark.
Silicon is indirect bandgap material, and its luminous efficiency is the lowest, although have been realized in the silicon Raman of optical pumping
(Raman) laser instrument, but the most also it is not carried out the electric pump silicon laser instrument of real meaning.Although people use key
Compound laser diode is bonded on silicon materials by conjunction technology；Or direct extension luminescent properties is excellent on silicon three or five
Race's material, thus realize silica-based mixing laser, but the device making technics of III-V material incompatible with CMOS be needs
One of difficult point solved.Additionally, utilizing four race's materials to make silica-based four race's laser instrument is also one of current study hotspot.Germanium material
Material is a kind of four race materials compatible with CMOS technology.Although germanium is indirect band-gap semiconductor as silicon, but it directly carries
Gap is bigger 140meV than indirect band gap, and can reduce difference in band gap further by strain engineering, thus improves electronics and occupy
The probability of direct band gap energy valley, thus obtain high efficiency direct band gap recombination luminescence.By rational device structure design, can
To realize germanium high efficiency light emitting device even germanium laser instrument.The stannum being all column IV element is introduced, it is also possible to reduce difference in band gap in germanium,
When Theil indices reaches 6-9%, direct band gap material can be changed into, be greatly enhanced the luminous efficiency of material.2012,
MIT achieves the optical pumping silicon germanium laser instrument of pulsed operation.2015, the light achieving pulsed operation of the seminar of Germany
Pumping silicon germanium stannum laser instrument.The seminar of MIT and Stuttgart University, Germany achieves electric pump silicon germanium laser instrument respectively.
Realize owing to the laser instrument of electric pump needs to make waveguiding structure, N-shaped doped layer, p-type doped layer and corresponding electrode
The injection of carrier, and N-shaped doped layer, p-type doped layer and corresponding electrode can cause strong light to absorb close to waveguide
Loss.The silicon germanium laser instrument of MIT and Stuttgart University, Germany design is that longitudinal p-n structure, doped layer and electrode are to light
Absorption avoid the most very well, the waveguide sidewalls light loss that etching is formed is big, needs to use complicated and the most overripened to germanium material
The problem such as CMP process.Owing to the light loss of waveguide is big, device concordance is bad, and device lasing threshold is too big,
Life-span is the shortest, it is impossible to realize work continuously.
Summary of the invention
In view of above-mentioned technical problem, the invention provides a kind of silicon-based lateral injection laser and preparation method thereof, can answer
For improving the overall performance of silica-based four race's laser instrument, it is possible to be applied to make silica-based III-V laser instrument, to improve itself and silicon
The compatibility of CMOS technology.
The present invention provides a kind of silicon-based lateral injection laser, including:
One silicon substrate, the intermediate fabrication above this silicon substrate has waveguide groove, the both sides of waveguide groove above this silicon substrate
It is formed with p-type doped region and N-shaped doped region；
One silicon dioxide Window layer, it is produced on the part surface of silicon substrate, the corresponding described p-type of this silicon dioxide Window layer
Doped region and the above of N-shaped doped region have side window；
One slab waveguide, is grown in the waveguide groove of silicon substrate；
One insulating medium layer, it is produced on the surface of slab waveguide, and covers the surface of silicon dioxide Window layer；
One p-electrode, in a side window of its silicon dioxide Window layer being produced on p-type doped region；
One n-electrode, in the opposite side window of its silicon dioxide Window layer being produced on N-shaped doped region.
The present invention also provides for the preparation method of a kind of silicon-based lateral injection laser, comprises the steps:
Step 1: use ion implanting or the method for impurity diffusion, make p-type doped region the most respectively and N-shaped is mixed
Miscellaneous district, spaced between described p-type doped region and N-shaped doped region；
Step 2: cover silicon dioxide Window layer on silicon substrate, p-type doped region and N-shaped doped region surface, and adulterate in p-type
Silicon dioxide window is had between district and N-shaped doped region；
Step 3: by wet etching or etching, with silicon dioxide Window layer as mask plate, at silicon dioxide the window's position
Place corrodes or etches waveguide groove；
Step 4: by selective epitaxy, grows slab waveguide in the waveguide groove of silicon substrate, covers whole waveguide groove；
Step 5: deposit insulating medium layer in silicon dioxide Window layer and on slab waveguide；
Step 6: in the p-type doped region deposition insulating medium layer corresponding with N-shaped doped region and silicon dioxide Window layer upper
Face has side window；
Step 7: in the side window on insulating medium layer, deposition makes p-electrode and n-electrode respectively；
Step 8, by cleavage or the method for etching, makes on the waveguide bearing of trend of slab waveguide and is perpendicular to bar shaped ripple
The smooth end face led, forms optical resonator.
The invention has the beneficial effects as follows:
1. utilize waveguide groove and the smooth side wall of selective epitaxy formation waveguide that sidewall is smooth, it is to avoid by sides such as etchings
Method forms waveguide, can effectively reduce waveguide surface and scatter the light loss caused；
2.p type doped region and N-shaped doped region make on a silicon substrate the most in advance, beneficially the simplification of processing step and formation
Excellent Ohmic contact；
3.p type doped region, N-shaped doped region, p-electrode and n-electrode are all not directly contacted with slab waveguide, can effectively reduce certainly
The optical absorption loss caused is absorbed by Carriers Absorption and electrode；
4., after slab waveguide growth, directly use insulating medium layer parcel, it is not necessary to carry out follow-up to slab waveguide 30
Technique makes, and therefore also apply be applicable to make silica-based III-V laser instrument, to improve the compatibility of itself and silicon CMOS technology.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1, Fig. 2 are structural representation prepared by the present invention；
Fig. 3 is the preparation flow figure of the present invention.
Detailed description of the invention
Refer to shown in Fig. 1, Fig. 2, the invention provides a kind of silicon-based lateral injection laser, including:
One silicon substrate 10, surface makes has waveguide groove 10 ', waveguide groove 10 ' both sides to make p-type doped region 11 respectively
With N-shaped doped region 12.Described silicon substrate 10 has (001) crystal orientation, and wherein waveguide groove 10 ' extends along (110) crystal orientation.If
Use selective wet etching to form waveguide groove 10 ', then the sidewall of waveguide groove 10 ' is (111) crystal face, and smooth sidewall can
To reduce the optical scattering losses between slab waveguide 30 and waveguide groove 10 ' sidewall；If the etching of use or non-selective corrosion
Form waveguide groove 10 ', then waveguide groove 10 ' sidewall does not the most have strict specific crystal orientation, and sidewall smooth degree is the most too late
Selective wet etching is used to form waveguide groove 10 '.In order to reduce the parallel connection that silicon substrate 10 (slab waveguide 30 bottom) causes
Electric current, silicon substrate 10 should be low-doped, HR-Si substrate or SOI substrate, and resistivity should be greater than 10 ohmcms.Described p
Type doped region 11 and N-shaped doped region 12 are strip, (110) crystal orientation of long limit alignment silicon substrate 10.P-type doped region 11 and N-shaped
The doping content of doped region 12 is all higher than 1 × 1018cm-3, for improving Carrier Injection Efficiency further, doping content should be greater than 1
×1019cm-3, silicon substrate 10 between p-type doped region 11 and N-shaped doped region 12 and p-type doped region 11 and N-shaped doped region 12 and
Slab waveguide 30 collectively forms horizontal p-i-n diode structure.P-type doped region 11 and N-shaped doped region 12 are high due to doping content,
Have strong free-carrier Absorption to light, therefore p-type doped region 11 and N-shaped doped region 12 have a spacing away from slab waveguide 30
From, to reduce the light loss in strip waveguide 30.Wherein p-type doped region 11 and slab waveguide 30 be smaller than 5 μm, N-shaped is mixed
Miscellaneous district 12 is smaller than 5 μm with slab waveguide 30；
One silicon dioxide Window layer 20, it is produced on the part surface of silicon substrate 10, corresponding described p-type doped region 11, N-shaped
Side window is had on doped region 12.Silicon dioxide Window layer 20 has two effects.First functions as silicon substrate
The hard template of waveguide groove 10 ' is made on 10；Second template functioning as selective epitaxy slab waveguide 30.Selective epitaxy
Time, slab waveguide 30 only growth in waveguide groove 10 ', silicon dioxide Window layer 20 does not grows.Raw at slab waveguide 30
After having grown, silicon dioxide Window layer 20 is optional to be removed, and it does not affect the function of described silicon-based lateral injection laser；
One slab waveguide 30, is grown in the waveguide groove 10 ' of silicon substrate 10；The material of wherein said slab waveguide 30
It is the pure germanium in four race's materials or germanium ashbury metal, or the quantum dot of pure germanium, germanium ashbury metal composition and quantum well structure, or three
Gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus or indium gallium arsenic in five race's materials, or gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus, indium gallium arsenic composition
Quantum dot and quantum well structure.All there is lattice mismatch in various degree, generally in above-mentioned germanium, germanium stannum and III-V material and silicon
The method using cushion obtains high-quality material.Wherein said composition slab waveguide 30 is grown in the way of selective epitaxy
In waveguide groove 10 ' on silicon substrate 10.The size of the waveguide groove 10 ' on silicon substrate 10 and the crystal mass of slab waveguide 30
There is certain relation, reduce the width of waveguide groove 10 ', the crystal mass of slab waveguide 30 can be improved, be particularly reduced to
Hundreds of or tens nanometer scale.The upper surface of the slab waveguide 30 that selective epitaxy is formed generally also has specific crystal orientation, this crystalline substance
To formation so that slab waveguide 30 has smooth upper surface, can reduce slab waveguide 30 upper surface light scattering damage
Consumption.Slab waveguide 30 upper surface shape is not only limited to triangle, its according to the waveguide groove 10 ' of different crystal orientations, different outside
Prolong material and different epitaxial conditions and create a difference.Slab waveguide 30 has more higher than silicon substrate 10 and insulating medium layer 40
Refractive index, most of light that therefore slab waveguide 30 is launched is well limited in slab waveguide 30, and is turned over by population
Transfer the acquisition gain of light, thus light is amplified；
One insulating medium layer 40, it is produced on the surface of slab waveguide 30, and covers the table of silicon dioxide Window layer 20
Face, for realizing its electrical isolation with external environment, p-type doped region 11 described in correspondence and N-shaped doped region 12 has side
Window；
One p-electrode 51 and n-electrode 52, be produced on p-type doped region 11 and N-shaped doped region 12, and formed good
Ohmic contact.P-type doped region and N-shaped doped region are silicon materials, and the technique that silicon materials form Ohmic contact is the most highly developed,
Avoid Ohmic contact and make the bad big series resistance caused.Two electrode fabrications are in slab waveguide 30 both sides farther out, permissible
Avoid the electrode absorption to light.Additionally it can be seen that after covering insulating medium layer 40, slab waveguide 30 is good from device architecture
Wrap up well, device fabrication process is also not related to slab waveguide 30 is carried out other semiconductor technologies.Therefore, slab waveguide is worked as
30 when being III-V material, then the method can be greatly enhanced the compatibility of itself and CMOS technology.
Refer to Fig. 3 and combine refering to Fig. 1 and Fig. 2, according to an aspect of the present invention, additionally providing a kind of silicon-based lateral
The preparation method of injection laser.This preparation method includes:
Step 1: using photoresist as mask, uses the method for ion implanting or impurity diffusion to make on silicon substrate 10 respectively
Make p-type doped region 11 and N-shaped doped region 12, spaced between two doped regions.In the present embodiment, the silicon substrate 10 of employing is high
Resistance silicon substrate, resistivity is more than 5000 Europe centimetre, and crystal orientation is (001).The employing of p-type doped region 11 and N-shaped doped region 12 from
The mode that son injects makes, and doping content is more than 1 × 1018cm-3, for improving Carrier Injection Efficiency further, doping content should
More than 1 × 1019cm-3, and high-temperature annealing activation.P-type doped region 11 and N-shaped doped region 12 are strip, long limit alignment silicon substrate
(110) crystal orientation of 10.Being smaller than 10 μm between p-type doped region 11 and N-shaped doped region 12, concrete spacing is according to design
Different；
Step 2: cover silicon dioxide Window layer 20 on silicon substrate 10, p-type doped region 11 and N-shaped doped region 12 surface, and
Making silicon dioxide window between p-type doped region 11 and N-shaped doped region 12, silicon dioxide window needs alignment specific brilliant
To.In the present embodiment, silicon dioxide Window layer 20 uses chemical gas-phase deposition system (PECVD) deposition that plasma strengthens, its
Thickness is 150nm.Using photoresist as mask, use the method for RIE dry etching at p-type doped region 11 and N-shaped doped region 12
Between make silicon dioxide window, make window exposes silicon substrate 10.Silicon dioxide window is positioned at p-type doped region 11 and N-shaped is mixed
Center between miscellaneous district 12, (110) crystal orientation of long limit alignment silicon substrate 10.According to design difference, silicon dioxide window
Width is 1 μm-4 μm.
Step 3: by wet etching or etching, with silicon dioxide Window layer 20 as mask plate, corrodes at the window's position
Or etching silicon substrate 10 forms waveguide groove 10 '；In the present embodiment, use TMAH as the corrosive liquid of waveguide groove 10 ', corrosion
The degree of depth is 400nm.This corrosive liquid is crystal orientation selective corrosion liquid, and the sidewall of waveguide groove 10 ' is that (111) of silicon substrate 10 are brilliant
Face, waveguide groove 10 ' bottom is (001) crystal face, the schematic cross-section of sample when Fig. 1 is this step.
Step 4: by selective epitaxy, growth slab waveguide 30, covers whole ripple in the waveguide groove 10 ' of silicon substrate 10
Guide groove 10 '.The material of wherein said slab waveguide 30 is the pure germanium in four race's materials or germanium ashbury metal, or pure germanium, germanium
Ashbury metal composition quantum dot and quantum well structure, or III-V material in gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus or indium gallium arsenic,
Or gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus, indium gallium arsenic composition quantum dot and quantum well structure.Wherein p-type doped region 11 and bar shaped
Waveguide 30 be smaller than 5 μm, N-shaped doped region 12 is smaller than 5 μm with slab waveguide 30.In the present embodiment, slab waveguide
The material of 30 is pure germanium material.Growth course is: sample, after over cleaning, puts into ultra-high vacuum CVD system
(UHV-CVD), the mask plate with silicon dioxide Window layer 20 as selective epitaxy, raw in the waveguide groove 10 ' on silicon substrate 10
Long pure germanium material.Pure germanium material is 300nm or 500nm with the spacing of p-type doped region and N-shaped doped region；
Step 5: deposit insulating medium layer 40 on slab waveguide 30 and silicon dioxide Window layer 20, it is achieved itself and extraneous ring
The electrical isolation in border.In the present embodiment, insulating medium layer 40 is silicon dioxide, and thickness is 400nm, uses PECVD deposition；
Step 6: make p-electrode 51 on the silicon substrate 10 of p-type doped region 11 correspondence；
Step 7: make n-electrode 52 on the silicon substrate 10 of N-shaped doped region 12 correspondence；
Step 8: by cleavage or the method for etching, makes on the waveguide bearing of trend of slab waveguide 30 and is perpendicular to bar shaped
The smooth end face of waveguide 30, forms optical resonator.In the present embodiment, the mode that have employed cleavage obtains optical resonator.For
Facilitating cleavage, be first thinned to about 100 μm by silicon substrate 10, the crystal face of cleavage is (110).
So far, the preparation method of a kind of silicon-based lateral of the present embodiment injection laser is introduced complete.
In sum, the invention provides a kind of silicon-based lateral injection laser and preparation method thereof.The present invention serves as a contrast at silicon
, utilize crystal orientation selective wet etching to form the waveguide groove 10 ' that sidewall is smooth, and select in waveguide groove 10 ' at the end 10
Extension slab waveguide 30.Utilize smooth crystal face (upper surface), slab waveguide 30 and waveguide that slab waveguide 30 selective epitaxy is formed
Groove 10 ' sidewall forms smooth interface, collectively forms the sidewall of waveguide, it is to avoid form waveguide, Ke Yiyou by methods such as etchings
Effect reduces waveguide surface and scatters the light loss caused.P-type doped region 11 and N-shaped doped region 12 are produced on silicon substrate 10 the most in advance
On, the beneficially simplification of processing step and form excellent Ohmic contact.P-type doped region 11, N-shaped doped region 12, p-electrode 51 and
N-electrode 52 is all not directly contacted with slab waveguide 30, can effectively reduce free-carrier Absorption and electrode absorbs the light caused and inhales
Receive loss.This silicon-based lateral injection laser, reduces Waveguide loss, can be applicable to improve the entirety of silica-based four race's laser instrument
Performance；After growing due to slab waveguide 30, insulating medium layer 40 is directly used to wrap up, it is not necessary to carry out follow-up to slab waveguide 30
Technique make, therefore also apply be applicable to make silica-based III-V laser instrument, to improve the compatibility of itself and silicon CMOS technology.Should
Silicon-based lateral injection laser novel structure, Waveguide loss is the least, and preparation technology is simple, compatible with CMOS technology, has
It is likely to become the main laser light source of Si-based OEIC, has important application at aspects such as optic communication, light network, light are electrically integrated
It is worth.
Although it should be noted that the demonstration of the parameter comprising particular value can be provided herein, it is to be understood that parameter is without really
Cut equal to corresponding value, but can be similar to be worth accordingly in acceptable error margin or design constraint.Embodiment carries
The direction term arrived, such as " on ", D score, "front", "rear", "left", "right" etc., be only the direction with reference to accompanying drawing.Therefore, use
Direction term be used to illustrate not for limiting the scope of the invention.
Additionally, particular embodiments described above, carry out entering one to the purpose of the present invention, technical scheme and beneficial effect
Step describes in detail, be it should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Bright, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included in the present invention
Protection domain within.
Claims (10)
1. a silicon-based lateral injection laser, including:
One silicon substrate, the intermediate fabrication above this silicon substrate has waveguide groove, and above this silicon substrate, the both sides of waveguide groove are formed
There are p-type doped region and N-shaped doped region；
One silicon dioxide Window layer, it is produced on the part surface of silicon substrate, the corresponding described p-type doping of this silicon dioxide Window layer
District and the above of N-shaped doped region have side window；
One slab waveguide, is grown in the waveguide groove of silicon substrate；
One insulating medium layer, it is produced on the surface of slab waveguide, and covers the surface of silicon dioxide Window layer；
One p-electrode, in a side window of its silicon dioxide Window layer being produced on p-type doped region；
One n-electrode, in the opposite side window of its silicon dioxide Window layer being produced on N-shaped doped region.
Silicon-based lateral injection laser the most according to claim 1, wherein said silicon substrate is low-doped or Gaoyang silicon lining
The end or SOI substrate.
Silicon-based lateral injection laser the most according to claim 1, the material of wherein said slab waveguide is four race's materials
Pure germanium in material or germanium ashbury metal, or the quantum dot of pure germanium, germanium ashbury metal composition and quantum well structure, or III-V material
In gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus or indium gallium arsenic, or gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus, indium gallium arsenic composition quantum dot and
Quantum well structure.
Silicon-based lateral injection laser the most according to claim 1, wherein the doping of p-type doped region and N-shaped doped region is dense
Degree is more than 1 × 1018cm-3, silicon substrate between this p-type doped region and N-shaped doped region, and p-type doped region and N-shaped doped region
Horizontal p-i-n diode structure is collectively formed with slab waveguide.
Silicon-based lateral injection laser the most according to claim 1, wherein being smaller than of p-type doped region and slab waveguide
5 μm, N-shaped doped region is smaller than 5 μm with slab waveguide.
6. a preparation method for silicon-based lateral injection laser, comprises the steps:
Step 1: use ion implanting or the method for impurity diffusion, makes p-type doped region and N-shaped doping the most respectively
District, spaced between described p-type doped region and N-shaped doped region；
Step 2: cover silicon dioxide Window layer on silicon substrate, p-type doped region and N-shaped doped region surface, and at p-type doped region and
Silicon dioxide window is had between N-shaped doped region；
Step 3: by wet etching or etching, with silicon dioxide Window layer as mask plate, rotten at silicon dioxide the window's position
Lose or etch waveguide groove；
Step 4: by selective epitaxy, grows slab waveguide in the waveguide groove of silicon substrate, covers whole waveguide groove；
Step 5: deposit insulating medium layer in silicon dioxide Window layer and on slab waveguide；
Step 6: p-type doped region corresponding with N-shaped doped region deposition insulating medium layer and silicon dioxide Window layer above point
Do not have side window；
Step 7: in the side window on insulating medium layer, deposition makes p-electrode and n-electrode respectively；
Step 8, by cleavage or the method for etching, makes on the waveguide bearing of trend of slab waveguide and is perpendicular to slab waveguide
Smooth end face, forms optical resonator.
The preparation method of silicon-based lateral injection laser the most according to claim 6, wherein said silicon substrate is low-doped
Or High resistivity substrate.
The preparation method of silicon-based lateral injection laser the most according to claim 6, wherein said slab waveguide is to select
The mode of extension grows in waveguide groove on a silicon substrate, after slab waveguide has grown, removes silicon dioxide Window layer,
Do not affect the function of described silicon-based lateral injection laser；The material of described slab waveguide be the pure germanium in four race's materials or
Germanium ashbury metal, or pure germanium, germanium ashbury metal composition quantum dot and quantum well structure, or III-V material in gallium arsenic, gallium
Nitrogen, indium arsenic, indium phosphorus or indium gallium arsenic, or gallium arsenic, gallium nitrogen, indium arsenic, indium phosphorus, indium gallium arsenic composition quantum dot and quantum well structure.
The preparation method of silicon-based lateral injection laser the most according to claim 6, wherein p-type doped region and N-shaped doping
The doping content in district is more than 1 × 1018cm-3, this p-type doped region and N-shaped doped region, between p-type doped region and N-shaped doped region
Silicon substrate and slab waveguide collectively form horizontal p-n diode structure.
The preparation method of silicon-based lateral injection laser the most according to claim 9, wherein p-type doped region and bar shaped ripple
That leads is smaller than 5 μm, and N-shaped doped region is smaller than 5 μm with slab waveguide.
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| JP2019096730A (en) * | 2017-11-22 | 2019-06-20 | 日本電信電話株式会社 | Semiconductor optical element |
| JP7147152B2 (en) | 2017-11-22 | 2022-10-05 | 日本電信電話株式会社 | semiconductor optical device |
| CN114336270A (en) * | 2020-09-30 | 2022-04-12 | 苏州华太电子技术有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
| CN114336270B (en) * | 2020-09-30 | 2023-11-24 | 苏州华太电子技术股份有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
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