CN100369339C - Silicon-based DBR laser with standard integrated circuit compatible and its process - Google Patents

Silicon-based DBR laser with standard integrated circuit compatible and its process Download PDF

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CN100369339C
CN100369339C CNB2005101052610A CN200510105261A CN100369339C CN 100369339 C CN100369339 C CN 100369339C CN B2005101052610 A CNB2005101052610 A CN B2005101052610A CN 200510105261 A CN200510105261 A CN 200510105261A CN 100369339 C CN100369339 C CN 100369339C
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district
dbr
photoetching
make
reflector
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CN1941525A (en
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陈弘达
刘海军
高鹏
顾明
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Institute of Semiconductors of CAS
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Abstract

The invention is concerned with the silicon-based DBR laser and the process that is compatible the standard integrate circuit process in the semiconductor luminescent parts technology field. The invention is: uses the SOI wafer as the underlay, uses the process facture that is compatible the standard IC process, the active area uses the PN knot LED structure, sets the DBR Bragg whole reflector and the DBR half reflector in the passive area of the two sides of the active area respectively in order to form the resonant cavity.

Description

Silica-based DBR laser and technology thereof with the standard ic process compatibility
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly a kind of silica-based DBR laser and technology thereof of and standard ic process compatibility.
Background technology
Along with reducing rapidly of standard integrated circuit technology characteristic size, the density and the expense of device are greatly improved.Yet energy loss on the electricity interlinkage line and electromagnetic interference have become the bottleneck of the silica-based microelectronic integrated circuit development of restriction.The light interconnection is expected to become the effective way that addresses this problem according to its clear superiority on transmission bandwidth, antijamming capability and energy consumption.Silicon materials are main materials of microelectronic integrated circuit technology, have brought into play very important effect aspect very lagre scale integrated circuit (VLSIC).Utilize silicon as stock, adopt ripe standard integrated circuit technology to make opto-electronic device and optoelectronic integrated circuit, have incomparable advantage on the cost He on the technical maturity, will become the preferred option of making opto chip and solving the electrical interconnection problem.
With the silica-based light emitting devices of standard ic process compatibility is that the silicon based opto-electronics subclass becomes the important component part in the loop.Since this device have be suitable for integrated, cost is low, be easy to advantage such as large-scale production, the optic electric interface as chip chamber or chip internal in optical interconnection system of future generation has boundless application prospect.But how strengthening electro-optical efficiency, make and to be suitable for integrated silica-based light emitting devices, is to need the difficult problem that solves in the research.The silica-based DBR laser of of the present invention and standard ic process compatibility is to utilize the SOI wafer to do substrate, makes the PN junction light-emitting diode on epitaxial loayer.The diode both sides make distribution Bragg reflector respectively, form resonant cavity.When reaching threshold condition, can realize efficient laser output.And this device adopts DBR as resonant cavity, is suitable for becoming with the silicon based opto-electronics subclass in the loop other device to realize integrated on the structure.
Summary of the invention
The purpose of this invention is to provide a kind of and the silica-based DBR laser standard ic process compatibility, its have manufacture craft maturation, cost low, be suitable for integrated, be easy to advantage such as large-scale production, in light interconnection of future generation and total silicon optical chip, have boundless application prospect.
It is substrate that the present invention adopts the SOI wafer, utilizes with the technology of standard ic process compatibility and makes, and active area adopts the PN junction light emitting diode construction, and DBR full-reflector and DBR semi-reflecting mirror are set respectively in the passive region of active area both sides, constitutes resonant cavity.
The present invention realizes by the following method:
A kind of silica-based DBR laser with the standard ic process compatibility of the present invention, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, constitute resonant cavity, comprising:
One SOI substrate;
One PN junction light-emitting diode is made N on the top layer P of SOI substrate type epitaxial loayer +District and P +The district, N +Broken line structure, P make in the district +The district is strip structure, N +The district forms N with the top layer P type epitaxial loayer of SOI substrate +The P knot, N +District, P +Metal electrode is drawn in the district respectively;
One DBR full-reflector utilizes photoetching process to make the Bragg grating full-reflector on the top layer P of SOI substrate type epitaxial loayer, at inner λ/4 phase-shifted regions of introducing of grating;
One DBR semi-reflecting mirror utilizes photoetching process to make the Bragg grating semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer, is used for forming resonant cavity with the DBR full-reflector output laser;
Silica-based DBR laser both sides make isolation channel respectively, and this isolation channel carries out some optical confinement on DBR laser resonant cavity two side directions, prevent the light signal leakage;
Outer SiO 2The buried regions SiO of layer and SOI substrate 2Layer with the buried regions SiO of SOI substrate 2Carry out some optical confinement on the vertical direction in the plane at laminar surface place, prevent that light signal from revealing.
A kind of silica-based DBR laser fabrication technology with the standard ic process compatibility of the present invention, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, the main technique step is as follows:
(1) prepares the SOI wafer;
(2) long thin oxide layer, deposit Si 3N 4
(3) active area photoetching carves P +District and N +The district;
(4) place photoetching carves the place hand-hole, and the place is injected;
(5) the long field oxide layer floats SiO 2And Si 3N 4, long then thin oxide layer;
(6) P +District's photoetching carves P +The district, boron injects, and forms P +The district;
(7) N +District's photoetching carves N +The district, phosphorus injects, and forms N +The district;
(8) photoetching carves the DBR grating region;
(9) etching DBR full-reflector and DBR semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer;
(10) long thin oxide layer;
(11) photoetching carves the isolation channel zone in DBR laser resonant cavity both sides;
(12) deep erosion carves isolation channel;
The outer SiO of (13) deposit 2Layer;
(14) long phosphor silicic acid glass-layer;
(15) fairlead photoetching;
(16) aluminum lead photoetching, the electrode of aluminizing;
Wherein, N +District's doping content is 1 * 10 19Cm -3, P +District's doping content is 1 * 10 19Cm -3
Description of drawings
Fig. 1 is the silica-based DBR laser vertical view with the standard ic process compatibility;
Fig. 2 is and the silica-based DBR laser profile of standard ic process compatibility (A-A ').Outer field SiO does not draw among the figure 2Layer and metal level;
Fig. 3 is and the silica-based DBR laser profile of standard ic process compatibility (B-B ').
Embodiment
The present invention is a kind of and silica-based DBR laser and technology thereof the standard ic process compatibility, and its concrete structure sees also Figure of description, comprising:
One SOI substrate;
One PN junction light-emitting diode, N +Broken line structure, P make in the district +The district is strip structure, N +The district forms N with P type epitaxial loayer +The P knot, N +District, P +Metal electrode is drawn in the district respectively;
One DBR full-reflector utilizes photoetching process to make the Bragg grating reflector on epitaxial loayer, at inner λ/4 phase-shifted regions of introducing of grating;
One DBR semi-reflecting mirror utilizes photoetching process to make the Bragg grating reflector on epitaxial loayer, is used for forming resonant cavity with DBR strong reflection device output laser.
Silica-based DBR laser both sides make isolation channel respectively, can (shown in Figure of description) carry out some optical confinement on the Y direction, prevent the light signal leakage.
Outer SiO 2The layer and the buried regions SiO of SOI substrate 2Layer (shown in Figure of description) on the Z direction carries out some optical confinement, prevents the light signal leakage.
The technology of employing of the present invention and standard ic process compatibility, the SOI wafer of at first selecting bonding technology to make.Require the SiO of wafer 2Buried regions is 1 μ m, and P type epitaxy layer thickness is 2 μ m.On P type epitaxial loayer, make N respectively +District and P +The district, N +The district is designed to broken line shape, as shown in Figure 1.Adopt lithographic technique to make the DBR reflector, structure as shown in Figure 1 and Figure 2.Near P +What distinguish a side is the DBR full-reflector, in the inner introducing of full-reflector λ/4 phase shifts.Near N +What distinguish a side is the DBR semi-reflecting mirror, forms resonant cavity with the DBR full-reflector, and output laser.Adopt the deep reaction ion etching technology at silica-based DBR laser both sides etching isolation channel, as shown in figures 1 and 3.
After device architecture completes, the outer SiO of deposit 2Layer.Isolation channel can carry out some optical confinement on the Y direction, prevent the light signal leakage.Simultaneously, outer SiO 2The layer and the buried regions SiO of SOI substrate 2Layer (shown in Figure of description) on the Z direction carries out some optical confinement, prevents the light signal leakage.Utilize photoetching technique to carve fairlead, metallized electrode.P +The district connects metal electrode 1, is ohmic contact, as shown in Figure 2, and this electrode grounding; N +The district connects metal electrode 2, and this electrode connects positive voltage, N +The district forms N with P type epitaxial loayer +The P diode will form depletion region under reverse voltage, charge carrier generation radiation recombination just produces photon.This device is horizontal mode of operation, and under applied voltage, charge carrier moves on directions X, the light of generation is propagated along directions X, in the resonant cavity of DBR full-reflector and the formation of DBR semi-reflecting mirror, produce stimulated radiation and amplify, produce laser, export through the DBR semi-reflecting mirror.
The silica-based DBR laser fabrication technology of of the present invention and standard ic process compatibility, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, the main technique step is as follows:
(1) prepares the SOI wafer;
(2) long thin oxide layer, deposit Si 3N 4
(3) active area photoetching carves P +District and N +The district;
(4) place photoetching carves the place hand-hole, and the place is injected;
(5) long field oxide floats SiO 2And Si 3N 4, long then thin oxygen;
(6) P +District's photoetching carves P +The district, boron injects, and forms P +The district;
(7) N +District's photoetching carves N +The district, phosphorus injects, and forms N +The district;
(8) photoetching carves the DBR grating region;
(9) etching DBR full-reflector and DBR semi-reflecting mirror on epitaxial loayer;
(10) long thin oxygen;
(11) photoetching carves the isolation channel zone;
(12) deep erosion carves isolation channel;
The outer SiO of (13) deposit 2Layer;
(14) long PSG;
(15) fairlead photoetching;
(16) aluminum lead photoetching, the electrode of aluminizing;
Wherein, N +District's doping content is 1 * 10 19Cm -3, P +District's doping content is 1 * 10 19Cm -3
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, be manufactured with source region PN junction light emitting diode construction, make DBR full-reflector and DBR semi-reflecting mirror in the passive region, make silica-based DBR laser both sides isolation channel, all adopt technology with the standard ic process compatibility.
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, the DBR full-reflector utilizes photoetching process to make the DBR full-reflector on epitaxial loayer, at the inner introducing of grating λ/4 phase-shifted regions.
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, the DBR semi-reflecting mirror utilizes photoetching process to make the DBR semi-reflecting mirror on epitaxial loayer, is used for and DBR strong reflection device forms resonant cavity, exports laser.
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, silica-based DBR laser both sides make isolation channel respectively, can carry out some optical confinement on the Y direction, prevent that light signal from revealing.

Claims (2)

1. silica-based DBR laser with the standard ic process compatibility, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, constitute resonant cavity, comprising:
One SOI substrate;
One PN junction light-emitting diode is made N on the top layer P of SOI substrate type epitaxial loayer +District and P +The district, N +Broken line structure, P make in the district +The district is strip structure, N +The district forms N with the top layer P type epitaxial loayer of SOI substrate +The P knot, N +District, P +Metal electrode is drawn in the district respectively;
One DBR full-reflector utilizes photoetching process to make the Bragg grating full-reflector on the top layer P of SOI substrate type epitaxial loayer, at inner λ/4 phase-shifted regions of introducing of grating;
One DBR semi-reflecting mirror utilizes photoetching process to make the Bragg grating semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer, is used for forming resonant cavity with the DBR full-reflector output laser;
Silica-based DBR laser both sides make isolation channel respectively, and this isolation channel carries out some optical confinement on DBR laser resonant cavity two side directions, prevent the light signal leakage;
Outer SiO 2The buried regions SiO of layer and SOI substrate 2Layer with the buried regions SiO of SOI substrate 2Carry out some optical confinement on the vertical direction in the plane at laminar surface place, prevent that light signal from revealing.
2. silica-based DBR laser fabrication technology with the standard ic process compatibility, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, the main technique step is as follows:
(1) prepares the SOI wafer;
(2) long thin oxide layer, deposit Si 3N 4
(3) active area photoetching carves P +District and N +The district;
(4) place photoetching carves the place hand-hole, and the place is injected;
(5) the long field oxide layer floats SiO 2And Si 3N 4, long then thin oxide layer;
(6) P +District's photoetching carves P +The district, boron injects, and forms P +The district;
(7) N +District's photoetching carves N +The district, phosphorus injects, and forms N +The district;
(8) photoetching carves the DBR grating region;
(9) etching DBR full-reflector and DBR semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer;
(10) long thin oxide layer;
(11) photoetching carves the isolation channel zone in DBR laser resonant cavity both sides;
(12) deep erosion carves isolation channel;
The outer SiO of (13) deposit 2Layer;
(14) long phosphor silicic acid glass-layer;
(15) fairlead photoetching;
(16) aluminum lead photoetching, the electrode of aluminizing;
Wherein, N +District's doping content is 1 * 10 19Cm -3, P +District's doping content is 1 * 10 19Cm -3
CNB2005101052610A 2005-09-28 2005-09-28 Silicon-based DBR laser with standard integrated circuit compatible and its process Expired - Fee Related CN100369339C (en)

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CN102540505B (en) * 2012-01-13 2014-12-31 中国科学院半导体研究所 SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling
GB2523383B (en) * 2014-02-24 2016-09-14 Rockley Photonics Ltd Detector remodulator
CN105576384B (en) * 2016-01-15 2019-10-29 南京邮电大学 A kind of tunable Tamm plasma perfection absorber of multichannel
US11367998B2 (en) 2017-12-15 2022-06-21 Shanghai Jiao Tong University Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers
CN109936048B (en) * 2017-12-15 2024-02-06 上海交通大学 Preparation method of erbium-doped or erbium-oxygen-doped silicon-based room-temperature communication band luminescent material, luminescent material and silicon-based laser
CN114815238A (en) * 2021-01-29 2022-07-29 华为技术有限公司 Waveguide module and display system

Citations (4)

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Publication number Priority date Publication date Assignee Title
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser
US6121068A (en) * 1997-02-10 2000-09-19 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
WO2002079834A2 (en) * 2001-03-31 2002-10-10 Bookham Technology Plc Optical filters
US20050063437A1 (en) * 2003-09-22 2005-03-24 Ray-Hua Horng Vertical-cavity surface emitting laser diode and method for producing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser
US6121068A (en) * 1997-02-10 2000-09-19 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
WO2002079834A2 (en) * 2001-03-31 2002-10-10 Bookham Technology Plc Optical filters
US20050063437A1 (en) * 2003-09-22 2005-03-24 Ray-Hua Horng Vertical-cavity surface emitting laser diode and method for producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
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