CN103367370A - Sub-wavelength grating reflection enhanced silicon-based wide-spectrum integrated optical detector and preparation method thereof - Google Patents
Sub-wavelength grating reflection enhanced silicon-based wide-spectrum integrated optical detector and preparation method thereof Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000001228 spectrum Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 230000000737 periodic effect Effects 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 14
- 238000004891 communication Methods 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 10
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention relates to the technical field of photoelectrons and provides a sub-wavelength grating reflection enhanced silicon-based wide-spectrum integrated optical detector and a preparation method thereof. The optical detector comprises a silicon substrate layer, a silicon oxide substrate layer, a sub-wavelength grating layer, a resin layer, an n-type epitaxial layer, an intrinsic layer and a p-type epitaxial layer which are sequentially formed from bottom to top, and the optical detector further comprises n-type contact electrodes formed on the n-type epitaxial layer and p-type contact electrodes formed on the p-type epitaxial layer, wherein the sub-wavelength grating layer includes gratings made of silicon material and having a specific pattern. The device provided by the invention has the advantages of easy integration, high quantum efficiency in a wide spectrum range, and high frequency response bandwidth; and meanwhile, relative technology is low in cost, simple and easy to implement. The problem that quantum efficiency and frequency response bandwidth of a traditional semiconductor optical detector are mutually restricted is solved, and the sub-wavelength grating reflection enhanced silicon-based wide-spectrum integrated optical detector and the preparation method thereof can be widely used in fields such as optical communication and optical signal processing.
Description
Technical field
The present invention relates to the photoelectron technology field, particularly silica-based wide spectrum integrated light detector of a kind of sub-wave length grating reflection enhancement type and preparation method thereof.
Background technology
Rapid growth along with message capacity, the energy consumption of the network terminal and node device, volume and reliability more and more become serious problem, the tradition opto-electronic device can't satisfy the needs of generation information technical development owing to the limiting factor of its material, structure and technique self.Have more powerful, more high reliability, more the silicon-based photonics integration device based on the new function micro-structural of small size is the important directions of Information Technology Development, it has broad application prospects at aspects such as broad band intelligent optical-fiber network, high speed optical communication, automatic measuring and controlling and national defense construction.
Along with the rapid growth of message capacity, system improves greatly to the requirement of response device bandwidth, wishes simultaneously can both realize higher quantum efficiency in the wide spectral range of whole optical fiber communication long wavelength (1.2 μ m～1.6 μ m) low loss window.Yet for traditional vertical-type p-i-n photo-detector, frequency response bandwidth and the quantum efficiency of device restrict mutually.Although can increase the quantum efficiency of device by the absorbed layer that increases device, owing to the restriction effect of carrier transport time, the speed of response of device will obviously descend.Katsumi Kishino and M.Selim
Resonant cavity enhanced (RCE) photo-detector that proposed in 1991 has solved the mutual restriction problem that exists between device quantum efficiency and the speed of response to a certain extent.The basic structure of RCE photo-detector is that absorbed layer is inserted in the resonant cavity, because the enhancement effect of resonant cavity, such devices namely can obtain higher quantum efficiency in the situation of thinner absorbed layer, simultaneously also reduce the transit time of photo-generated carrier at absorbed layer, thereby can obtain simultaneously high quantum efficiency and high response speed.Yet, the RCE photo-detector scientific research and move towards the practicality process in equally also have some difficulties:
(1) owing to the frequency-selecting effect of resonant cavity, device has certain wavelength selectivity, and the device quantum efficiency only obtains to strengthen in limited scope, therefore is not suitable for the needs of wide spectral response.
(2) semiconductor device that is used for optical communication system is mainly take the InP based material as main because and the refringence between the InP based material of InP Lattice Matching smaller, be difficult to obtain practical distribution Bragg reflector (DBR).So the preparation of single chip integrated long wavelength (1550nm wave band) RCE structure devices remains a difficult point.
(3) optic communication device is mainly take III-V family semiconductor device as main, still has difficulties with silicon based photon or the integrated of electronic device based on CMOS technique.
Summary of the invention
The technical problem that (one) will solve
Shortcoming for prior art, the present invention provides silica-based wide spectrum integrated light detector of a kind of sub-wave length grating reflection enhancement type and preparation method thereof in order to solve the problem of the mutual restriction of optical semiconductor detective quantum efficiency and frequency response bandwidth in the prior art.
(2) technical scheme
Solve the problems of the technologies described above, the present invention specifically adopts following scheme to carry out for this reason:
At first, the invention provides the silica-based wide spectrum integrated light detector of a kind of sub-wave length grating reflection enhancement type, described photo-detector comprises:
The layer-of-substrate silicon, silicon oxide liner bottom, sub-wave length grating layer, resin bed, N-shaped epitaxial loayer, intrinsic layer, the p-type epitaxial loayer that form successively from the bottom to top, and be formed on the N-shaped contact electrode on the N-shaped epitaxial loayer and be formed on p-type contact electrode on the p-type epitaxial loayer;
Wherein, described sub-wave length grating layer comprises the grating with specific pattern that is fabricated from a silicon.
Preferably, the grating pattern of described sub-wave length grating layer is periodicity or non-periodic pattern.
Preferably, the grating of described periodic patterns is equidistantly to wait the strip grating of the concentric ring grating of width or the parallel width such as equidistant or the uniform point-like array grating that forms of round dot or rectangular dots; The grating of described non-periodic pattern is for increasing progressively concentric ring grating that width successively decreases or parallel increase progressively the strip grating that width successively decreases from symmetry axis to the periphery spacing from the center of circle to the periphery spacing.
Preferably, the grating cycle in the described sub-wave length grating layer is 200nm～1.5 μ m, and duty ratio is 20%～80%; Optical grating reflection spectrum is greater than 30%.
On the other hand, the present invention also provides the preparation method of the silica-based wide spectrum integrated light detector of a kind of sub-wave length grating reflection enhancement type, and described method comprises step:
S1, etching forms SOI base sub-wave length grating on the SOI substrate;
S2, epitaxial growth III-V family photo-detector structure on III-V family substrate;
S3 adopts bonding technology to mix integrated III-V family's photo-detector epitaxial structure and SOI base sub-wave length grating;
S4, preparation optical semiconductor detector.
Preferably, among the step S1, the SOI substrate is by bottom Si, SiO
2Form with the top layer Si three-decker, preparing grating is on top layer Si.
Preferably, among the step S2, utilize epitaxial growth equipment at InP Grown InGaAs photo-detector.
Preferably, growth temperature remains on 650 ℃.
Preferably, among the step S3, described bonding technology comprises: Direct Bonding, SiO
2-SiO
2Bonding, Au/In bonding, benzocyclobutene bonding chip and sol-gel bonding chip.
Preferably, when adopting benzocyclobutene bonding chip technique, annealing temperature is 150～350 ℃, and annealing time is 1～4 hour.
(3) beneficial effect
In the solution of the present invention, a kind of silica-based mixing integrated light detector structure has been proposed, solved the mutual restriction of conventional semiconductors photo-detector quantum efficiency and frequency response bandwidth, can be widely used in the fields such as optical communication and light signal processing, device has the characteristics such as integrated, wide spectral range high-quantum efficiency, high-frequency responsive bandwidth that are easy to; Simultaneously related process have low cost, technique simple, be easy to the advantage such as realization.
Description of drawings
Fig. 1 is the silica-based wide spectrum integrated light detector schematic diagram of sub-wave length grating reflection enhancement type of the present invention;
Fig. 2 is the light path effect schematic diagram of photo-detector reflection enhancement of the present invention;
Fig. 3 is the periodic stripe grating pattern of sub-wave length grating layer in the photo-detector of the present invention;
Fig. 4 is the cyclic array grating pattern of sub-wave length grating layer in the photo-detector of the present invention;
Fig. 5 is the aperiodicity stripe grating pattern of sub-wave length grating layer in the photo-detector of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment.Based on the embodiment among the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work belongs to the scope of protection of the invention.
At first, referring to Fig. 1, the silica-based wide spectrum integrated light detector of sub-wave length grating reflection enhancement type of the present invention comprises layer-of-substrate silicon 1, silicon oxide liner bottom 2, sub-wave length grating layer 3, resin bed 4, N-shaped epitaxial loayer 7, intrinsic layer 8, the p-type epitaxial loayer 9 that forms successively from the bottom to top, and is formed on N-shaped contact electrode 5 and the p-type contact electrode 6 that is formed on the p-type epitaxial loayer 9 on the N-shaped epitaxial loayer 7.Wherein, described sub-wave length grating layer 3 comprises the grating with specific pattern that is fabricated from a silicon.N-shaped epitaxial loayer 7, intrinsic layer 8, p-type epitaxial loayer 9, N-shaped contact electrode 5 and p-type contact electrode 6 common formation extension photo-detectors, its preferred structure is the light receiving element based on the p-i-n structure, comprises the photovoltaic devices such as photo-detector or solar cell.
Further referring to Fig. 2, among the present invention with upper strata p-i-n structured light detector and the SOI (Silicon-On-Insulator of lower floor, silicon on the dielectric substrate) sub-wave length grating integrates, and (refractive index of Si is 3.5, SiO because storeroom has larger refringence
2Refractive index be 1.45), can obtain the nanoscale high index-contrast sub-wave length grating with the CMOS process compatible; Further utilize the wide spectral light reflection characteristic of sub-wave length grating, make incident light 10 by being reflected by sub-wave length grating behind the uptake zone, reverberation 11 realizes absorbing enhancing again by the device uptake zone, improves the quantum efficiency of device; Obtain to cover simultaneously the long wavelength of optical fiber communication, the wide spectral response of low loss window.
Referring to Fig. 3-5, the grating pattern of the sub-wave length grating layer among the present invention can be periodicity or acyclic pattern again.Particularly, it is the example of periodic patterns among Fig. 3,4, the grating pattern of Fig. 3 (a) for the concentric ring grating that equidistantly waits width (spacing refer to space between two gratings span, width refers to the width of gratings strips, hereinafter implication is identical), the grating pattern of Fig. 3 (b) is the parallel equidistant strip grating that waits width; The grating pattern of Fig. 4 is uniform point-like array grating, and the point of array is round dot among Fig. 4 (a), and the point of array is rectangular dots among Fig. 4 (b).It is the example of non-periodic pattern among Fig. 5, the grating pattern of Fig. 5 (a) is for increasing progressively the concentric ring grating that width successively decreases from the center of circle to the periphery spacing, and the grating pattern of Fig. 5 (b) is parallel increasing progressively from symmetry axis to the periphery spacing and strip grating that width successively decreases.Preferably, the grating cycle of the sub-wave length grating among the present invention (is grating pitch, be above spacing and width sum) be 200nm～1.5 μ m, grating thickness is 100～800nm, the duty ratio ratio of whole grating region area (area of raster with) is 20%～80%; The sub-wave length grating reflectance spectrum is greater than 30%.
In the preparation process of above-mentioned photo-detector of the present invention, mainly adopt bonding technology realize to mix integrated opto-electronic device, particularly, by bonding technology mix integrated with III-V family semiconductor device silica-based sub-wave length grating.The complete preparation process of photo-detector device comprises:
Phase I, etching sub-wave length grating on the SOI substrate;
Second stage, epitaxial growth III-V family photo-detector structure on III-V family substrate;
Phase III, adopt bonding technology to mix integrated III-V family's photo-detector epitaxial structure and SOI base sub-wave length grating;
The quadravalence section, preparation optical semiconductor detector.
Wherein, the phase III adopts bonding technology to realize mixing integrated opto-electronic device, and bonding technology comprises Direct Bonding, SiO
2-SiO
2Bonding, Au/In bonding, benzocyclobutene (BCB) bonding chip and sol-gel bonding chip etc. mix integrated method at the silica-based grating of interior realization and photo-detector.When utilizing benzocyclobutene (BCB) bonding chip technique to realize that silica-based grating and photo-detector mix when integrated, annealing temperature is 150～350 ℃, and annealing time is 1～4 hour.
Below further with the periodic concentric ring grating among Fig. 3 (a), epitaxial growth InGaAs (indium GaAs, also be called as InGaAsP) photo-detector and be integrated into example by benzocyclobutene (BCB) bonding chip technique, by the preparation method of the silica-based wide spectrum integrated light detector of sub-wave length grating reflection enhancement type of the present invention is described, the method specifically comprises step:
The first step, preparation annular concentric SOI sub-wave length grating:
The SOI substrate is by bottom Si, SiO
2Form with the top layer Si three-decker, preparing grating on top layer Si, SiO
2Thickness is 500nm, and the thickness of top layer Si is 500nm;
Design plane sub-wave length grating pattern, wherein the shared regional diameter of annular concentric pattern (being the outside diameter of outmost turns annulus) is 300 μ m; The grating cycle is 750nm, and duty ratio is 60%;
Adopt the ZEP520 positive electronic corrosion-resistant as electron beam resist, utilize electron beam exposure equipment to make the grating mask pattern at sample;
Utilize the ICP dry etching to make sub-wave length grating, grating thickness determines (500nm) by top layer Si thickness;
At last, the ZEP520 positive electronic corrosion-resistant on the removal sample.
Second step, growth InGaAs (the indium GaAs also is called as InGaAsP) photo-detector epitaxial wafer:
Utilize epitaxial growth equipment, such as MOCVD (Metal-organic Chemical Vapor Deposition, the metallo-organic compound chemical gaseous phase deposition) equipment or MBE (Molecular Beam Epitaxy, molecular beam epitaxy) equipment etc. is at InP (indium phosphide) Grown InGaAs photo-detector;
Particularly, growth temperature remains on 650 ℃, the 1 μ m InP resilient coating of at first growing, then the 200nm InGaAs p-type of growing successively contact layer, 240nm InP etching stop layer, 350nmInGaAs absorbed layer, 450nm InP space layer, 40nm InGaAs etching stop layer, 200nm InPn type contact layer, 50nm InGaAs etching stop layer, the 200nm InP resilient coating of growing at last.
In the 3rd step, that SOI base sub-wave length grating and photo-detector epitaxial structure is integrated:
It is extension sample about 1cm2 that InGaAs photo-detector epitaxial wafer is cleaved into area;
By deionized water, alcohol, acetone extension sample and SOI base sub-wave length grating are cleaned;
Utilize sol evenning machine on SOI base sub-wave length grating, evenly to apply one deck thick benzocyclobutene of 1 μ m (BCB) resin;
Utilize anchor clamps that SOI base sub-wave length grating and extension sample are fixed, together put into annealing furnace, the annealing furnace temperature rises to 250 ℃, naturally cooling after 2 hours, and the sample bonding is finished.
The 4th step, the silica-based wide spectrum integrated light detector preparation of sub-wave length grating reflection enhancement type:
By deionized water, alcohol, acetone integrated sample is cleaned;
Device end-process process mainly may further comprise the steps: at first, through photoetching treatment, utilize magnetic control sputtering system to produce the p-type contact electrode of Pt-Ti-Pt-Au.Light inlet aperture, center is 30 μ m; And produce the circular upper table surface that diameter is 42 μ m (being the structure of intrinsic layer 8 and p-type epitaxial loayer 9 among Fig. 1) by photoetching and wet etching method, the wet etching to InP and InGaAs material has used respectively HCl/H
3PO
4(1: 1) corrosive liquid and H
2SO
4/ H
2O
2/ H
2O (1: 1: 2) corrosive liquid; Secondly, again produce the N-shaped contact electrode through photoetching treatment and magnetron sputtering, and erode away the circular following table (being the structure of N-shaped epitaxial loayer 7 among Fig. 1) of diameter 62 μ m; Then, device carries out passivation with polyimides and (forms a passivation layer at the device upper surface, not shown this passivation layer among Fig. 1), (each extraction electrode is electrically connected with each contact electrode by the perforate in the passivation layer to utilize magnetron sputtering apparatus to make the Ti-Au extraction electrode after the perforate, external electric signal is conducted the connection of not shown extraction electrode among Fig. 1 to each contact electrode); Finally by crossing the polishing attenuate, element manufacturing is complete.
The present invention has successfully proposed a kind of silica-based mixing integrated light detector structure, solved the mutual restriction of conventional semiconductors photo-detector quantum efficiency and frequency response bandwidth, can be widely used in the fields such as optical communication and light signal processing, on the from now on important impact of integrated generation of opto-electronic device.In the solution of the present invention, utilize silica-based sub-wave length grating that bonding technology realizes having special pattern to mix integrated with III-V family photo-detector.The wide spectral light reflection characteristic of sub-wave length grating, make incident light pass through again to be passed through the device uptake zone by optical grating reflection behind the uptake zone, realize effectively absorbing increasing, improve the quantum efficiency of device, and the spectral response range of device can cover the whole long wavelength's low loss window of optical fiber communication.Therefore, with respect to prior art, the present invention has following clear superiority:
(1) be easy to integrated: realize that by bonding method the III-V p-i-n of family structured light detector and SOI sub-wave length grating are integrated; Device and preparation process cost thereof are low, technique simple, be easy to realization.
(2) the grating performance is good: utilize the SOI material to have the characteristics of larger refringence, obtain the sub-wave length grating with the nanoscale high index-contrast of CMOS process compatible.
(3) in wide spectral range, realize high-quantum efficiency: utilize the wide spectral light reflection characteristic of sub-wave length grating, make incident light pass through behind the uptake zone to be reflected again by the device uptake zone by sub-wave length grating, realize absorbing and strengthen, improve the quantum efficiency of device.Obtain to cover simultaneously the wide spectral response (greater than 400nm) of optical fiber communication long wavelength low loss window.
Above execution mode only is used for explanation the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; in the situation that does not break away from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and real protection scope of the present invention should be defined by the claims.
Claims (10)
1. silica-based wide spectrum integrated light detector of sub-wave length grating reflection enhancement type is characterized in that described photo-detector comprises:
The layer-of-substrate silicon, silicon oxide liner bottom, sub-wave length grating layer, resin bed, N-shaped epitaxial loayer, intrinsic layer, the p-type epitaxial loayer that form successively from the bottom to top, and be formed on the N-shaped contact electrode on the N-shaped epitaxial loayer and be formed on p-type contact electrode on the p-type epitaxial loayer;
Wherein, described sub-wave length grating layer comprises the grating with specific pattern that is fabricated from a silicon.
2. photo-detector according to claim 1 is characterized in that, the grating pattern of described sub-wave length grating layer is periodicity or non-periodic pattern.
3. photo-detector according to claim 2, it is characterized in that the grating of described periodic patterns is equidistantly to wait the strip grating of the concentric ring grating of width or the parallel width such as equidistant or the uniform point-like array grating that forms of round dot or rectangular dots; The grating of described non-periodic pattern is for increasing progressively concentric ring grating that width successively decreases or parallel increase progressively the strip grating that width successively decreases from symmetry axis to the periphery spacing from the center of circle to the periphery spacing.
4. photo-detector according to claim 1 is characterized in that, the grating cycle in the described sub-wave length grating layer is 200nm～1.5 μ m, and duty ratio is 20%～80%; Optical grating reflection spectrum is greater than 30%.
5. the preparation method of the silica-based wide spectrum integrated light detector of sub-wave length grating reflection enhancement type is characterized in that described method comprises step:
S1, etching forms SOI base sub-wave length grating on the SOI substrate;
S2, epitaxial growth III-V family photo-detector structure on III-V family substrate;
S3 adopts bonding technology to mix integrated III-V family's photo-detector epitaxial structure and SOI base sub-wave length grating;
S4, preparation optical semiconductor detector.
6. method according to claim 5 is characterized in that, among the step S1, the SOI substrate is by bottom Si, SiO
2Form with the top layer Si three-decker, preparing grating is on top layer Si.
7. method according to claim 5 is characterized in that, among the step S2, utilizes epitaxial growth equipment, at InP Grown InGaAs photo-detector.
8. method according to claim 7 is characterized in that, growth temperature remains on 650 ℃.
9. method according to claim 5 is characterized in that, among the step S3, described bonding technology comprises: Direct Bonding, SiO
2-SiO
2Bonding, Au/In bonding, benzocyclobutene bonding chip and sol-gel bonding chip.
10. method according to claim 9 is characterized in that, when adopting benzocyclobutene bonding chip technique, annealing temperature is 150～350 ℃, and annealing time is 1～4 hour.
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| CN111668324A (en) * | 2019-03-07 | 2020-09-15 | 苏州旭创科技有限公司 | Optical detector integrated with grating reflection structure |
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| CN104882368A (en) * | 2013-12-20 | 2015-09-02 | 加州大学董事会 | Bonding of heterogeneous material grown on silicon to a silicon photonic circuit |
| CN104882368B (en) * | 2013-12-20 | 2018-04-24 | 加州大学董事会 | The dissimilar materials being grown on silicon is bonded with silicon photonic circuit |
| CN105185862A (en) * | 2015-06-11 | 2015-12-23 | 北京邮电大学 | Mushroom type high speed light-detector having gathering enhancement function and manufacturing method thereof |
| CN105185862B (en) * | 2015-06-11 | 2017-03-01 | 北京邮电大学 | There is convergence and increase powerful mushroom-shaped high speed photodetector and preparation method thereof |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
| CN106684198A (en) * | 2016-11-28 | 2017-05-17 | 聊城大学 | Sub-wavelength grating based resonance enhanced ultraviolet light detector and preparation method thereof |
| CN106684198B (en) * | 2016-11-28 | 2019-02-01 | 聊城大学 | Harmonic intensified ultraviolet light detector and preparation method based on sub-wave length grating |
| CN106784028A (en) * | 2016-12-29 | 2017-05-31 | 北京邮电大学 | A kind of sub-wavelength beam-splitting optical grating hybrid integrated photodetector array |
| CN107170849A (en) * | 2017-05-04 | 2017-09-15 | 华中科技大学 | A kind of super surface texture polarization correlation arrowband detector of stripe shape and its preparation and application |
| CN107389190A (en) * | 2017-07-28 | 2017-11-24 | 华东师范大学 | A kind of micro spectrometer single chip integrated on silicon wafer and preparation method thereof |
| CN111668324A (en) * | 2019-03-07 | 2020-09-15 | 苏州旭创科技有限公司 | Optical detector integrated with grating reflection structure |
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