CN101393945A - Full silicon waveguide type photoelectric converter and manufacturing method thereof - Google Patents
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Abstract
The invention relates to the technical field of photoelectric converters, and discloses a 1.55 wave-band all-silicon waveguide photoelectric conversion device which is compatible with the complementary metal-oxide layer-semiconductor (CMOS) technology, wherein, optical absorption depends on injecting Si ions into Si to form complex deep-level defects so as to solve the problem that an Si photo-electron device is subject to 1.12eV band-gap width; a horizontal p-i-n structure arranged on the surface layer of an Si-based SOI substratum comprises an intrinsic region (i), an equivalent of a straight waveguide into which the Si ions are injected, and n-type and p-type doping regions (n and p) arranged at left and right parts of the substratum; and a bent waveguide is taken as a signal input part, the straight waveguide is taken as an optical absorption part, and a distributed Bragg reflection grating is arranged on two ends of the straight waveguide, so that optical signals can resonate in the straight waveguide for reinforcing the optical absorption. Meanwhile, the invention discloses a method for manufacturing the all-silicon waveguide photoelectric conversion device, and the method can be utilized for integrating a communication signal receiver with a micro-electronic chip on the Si.
Description
Technical field
The present invention relates to technical field of photoelectric, relate in particular to a kind of and 1.55 wave band full silicon waveguide type photoelectric converter and manufacture methods thereof complementary metal-oxide layer-semiconductor (CMOS) process compatible.
Background technology
Development along with high density, Large Volume Data transmission and computing, with photoelectron and microelectronics be integrated in an advantage on the chip more and more obviously, demand is more and more urgent, it plays important supporting role to development, national security and the scientific progress of Chinese national economy.For this reason, people use ripe Si technology and Si in the transparent characteristic of communication band, develop a large amount of optical passive components in Si base SOI waveguide.Yet the progress aspect Si base optical active component is slow, and its reason is not only because the indirect band gap of Si causes its light absorption and transition rate low, the light wave greater than 1 mum wavelength is not absorbed, and structurally also be not easy to the Si waveguide integrated.
Si base photodetector is integrated middle receiving optical signals of Si base optical electronic and the device that converts thereof into the signal of telecommunication, to light wave less than 1 mum wavelength, Si base photodetector has that response is fast, detectivity is high, dark current is little and the characteristics of bandwidth, and be easy to same field-effect transistor (FET) and heterojunction bipolar transistor (HBT) and constitute together and mix the integrated electro electronic circuit, to finish the effect that optical detection and light signal amplify jointly, be indispensable part in the monolithic integrated system.
At communication band, the active area materials of Si base photodetector mainly adopts Ge, and this is because the advantage that Ge has good optical absorption characteristics, high carrier mobility and is easy to the Si process compatible.But the lattice mismatch of Ge and Si is up to 4%, and direct growth has certain difficulty; Secondly, common discrete device all is used for surveying perpendicular to the film surface light signal, can't be integrated with planar optical waveguide; The 3rd, light absorption requires the intrinsic bed thickness to require intrinsic layer to approach with the charge carrier drift to contradict in discrete device; The 4th, the used technology of discrete device not with complementary metal-oxide layer-semiconductor (CMOS) process compatible, and then can't be integrated with microelectronics.At these deficiencies, many software engineering researchers invent go out the transversal device that is connected with waveguide, and it is big to being divided into two classes: a class is pn or p-i-n type structure (H.Temkin, the et.al., " Ge that stacks up and down by epitaxial growth in early days
xSi
1-xStrained-layersuperlattice waveguide photo-detectors operating near 1.3 μ m "; AppliedPhysics Letters; 48:963-65; 1986); its advantage is can indiscriminately imitate in the vertical devices various materials to grow and satisfy the transversal device needs; weak point is and the CMOS poor compatibility, and its top metal electrode is strong and produce loss to optical signal absorption; Another kind of then is the horizontal p-i-n structure that grows up recently, it is that the mode of utilizing ion to inject forms bivacancy complex compound (divacancycomplex) defective at Si, the valence band electronics transits to deep energy level (defective light absorption) (E.V.Monakhov after having absorbed photon, et.al., " Divacancy annealing in Si:Influence ofhydrogen ", Physical Review B, 69:153202,2006), and saturated back discharges electronics, its sharpest edges are and the CMOS compatibility, integrated with photoelectron, although the inefficiency of defective light absorption can compensate by prolonging absorbing waveguides.The research group of Canada Department of Engineering Physics of McMaster university adopts the horizontal p-i-n structure of second class to prepare photodetector, its wavelength is 9mA/W (J.D.B.Bradley in the responsiveness of 1.55 μ m, et.al., " Silicon waveguide-integratedoptical power monitor with enhanced sensitivity at 1550nm ", Applied PhysicsLetters, 86:241103,2005); The Lincoln laboratory of U.S. MIT is to the former waveguide refinement, the transit time of photo-generated carrier is shortened, obtained better result, its device operation wavelength is at 1.27-1.74 μ m, 1.55 the responsiveness at μ m place is 800mA/W, three dB bandwidth is 10-20GHz (M.W.Gleis, etal., " CMOS-compatible all-Si high-speed waveguidephotodiodes with high responsivity in near-infrared communication band ", IEEE Photonics Technology Letters, 19 (3): 152-54,2007).
Although Si base photodetector has very big progress, but still the place that exists some problems and have much room for improvement.At first, device long (about 1mm) is the waveguide of 0.5 * 0.22 square micron for cross-sectional area, extends 2000 times on the Si sheet, is not easy to the device preparation; Secondly, electron transport mechanism is not clear, and Si waveguide absorption is because Si on the principle
+Transit to the defective deep energy level behind the bivacancy complex compound defective that causes after ion injects, the valence band Electron absorption photon, but how electronics to be transported on the electrode and unclear from deep energy level, this makes the device preparation have blindness.
Summary of the invention
(1) technical problem that will solve
In view of this, one object of the present invention is to provide a kind of full silicon waveguide type photoelectric converter spare, especially with the full silicon waveguide type photoelectric converter spare of 1.55 micron wavebands of CMOS process compatible, break through the restriction of the suffered 1.12eV energy gap of Si photodetector with the method for deep energy level light absorption.
Another object of the present invention is to provide a kind of manufacture method of full silicon waveguide type photoelectric converter spare, especially with the manufacture method of the full silicon waveguide type photoelectric converter spare of 1.55 micron wavebands of CMOS process compatible, so that on Si, realize the integrated of signal of communication receiving device and microelectronic chip.
(2) technical scheme
For reaching an above-mentioned purpose, the invention provides a kind of method of making full silicon waveguide type photoelectric converter spare, this method may further comprise the steps:
Formation comprises the Si base SOI substrate of Si thin layer 3;
Use the method for dry etching or wet etching that Si thin layer 3 is etched into straight wave guide 3 and curved waveguide 8;
The method of using ion to inject is injected silicon ion (Si on the surface of straight wave guide 3
+), silver ion (Ag
+) or hydrogen ion (H
+), and annealing, form complex compound defective with deep energy level;
Use lithographic method, prepare distributed Bragg reflecting grating, make straight wave guide 3 become resonant cavity at straight wave guide 3 two ends;
The method of using ion to inject or spread, inject or diffusion III family's ion and annealing in straight wave guide 3 one sides, form p type doped region 4 and inject or diffusing V family ion and annealing at straight wave guide 3 opposite sides, form n type doped region 5, thereby on the substrate top layer, constitute horizontal p-i-n structure.
In the such scheme, described SOI substrate is by the Si substrate 1, the SiO that arrange successively from bottom to top
2Under-clad layer 2 and Si thin layer 3 constitute.
In the such scheme, described p type doped region 4 and described n type doped region 5 are provided with the Al or the Al alloy electrode of the local preparation of method of adopting evaporation of metal respectively thereon.
In the such scheme, described curved waveguide 8 is tangent with straight wave guide, and curved waveguide 8 external port are light wave incident end, and light wave is incorporated straight wave guide resonant cavity 3 into by curved waveguide 8.
In the such scheme, described distributed Bragg reflecting grating has the cycle bar-shaped trough, thereby the Communication ray ripple is formed high reflection.
In the such scheme, the chamber of the resonant cavity 3 between two reflecting gratings covers with the integral multiple of sufficient communication wavelengths.
In the such scheme, described communication light wave, its wavelength are 1.55 micron wavebands.
For reaching above-mentioned another purpose, the invention provides a kind of full silicon waveguide type photoelectric converter, have the Si base SOI substrate that comprises Si thin layer 3, this optical-electrical converter comprises:
Straight wave guide 3 and curved waveguide 8, described straight wave guide 3 and curved waveguide 8 form by dry etching or the described Si thin layer 3 of wet etching, wherein: become resonant cavity thereby be provided with distributed Bragg reflecting grating straight wave guide 3, and on the surface of straight wave guide 3, inject the Si ion and also anneal to form deep energy level defect at straight wave guide 3 two ends;
Be formed on the p type doped region 4 and the n type doped region 5 that is formed on the opposite side of straight wave guide 3 of a side of straight wave guide 3, thereby form horizontal p-i-n structure on the Si top layer.
In the such scheme, described p type doped region 4 injects or diffused with boron ion B by the side at straight wave guide 3
+And annealing and forming, described n type doped region 5 injects by the opposite side at straight wave guide 3 or diffusion phosphonium ion P
+And form.
In the such scheme, described SOI substrate is by the Si substrate 1, the SiO that arrange successively from bottom to top
2Under-clad layer 2 and Si thin layer 3 constitute.
In the such scheme, described p type doped region 4 and described n type doped region 5 have local Al or the Al alloy electrode that adopts the method preparation of evaporation of metal respectively thereon.
In the such scheme, described curved waveguide 8 is tangent with straight wave guide, and curved waveguide 8 external port are light wave incident end, and light wave is incorporated straight wave guide resonant cavity 3 into by curved waveguide 8.
In the such scheme, the size of the bending radius of described curved waveguide 8 is proportional to the power of the signal of the light wave that returns.
In the such scheme, described distributed Bragg reflecting grating has the cycle bar-shaped trough, thereby the Communication ray ripple is formed high reflection.
In the such scheme, the chamber of the resonant cavity 3 between two reflecting gratings covers with the integral multiple of sufficient communication wavelengths.
In the such scheme, the wavelength of described communication light wave is at 1.55 micron wavebands.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, can be with curved waveguide as the optical-electrical converter entrance port, curved waveguide and straight wave guide are tangent, and light wave is by curved waveguide input straight wave guide resonant cavity, the light wave that propagates into curved waveguide by the straight wave guide resonant cavity then seldom, its intensity is directly proportional with curved waveguide.Therefore " r " shape device that is combined by straight wave guide resonant cavity and curved waveguide has approximate unidirectional logical light characteristic.
2, utilize the present invention, the high reflecting grating in cloth formula Prague (Bragg) can be set at the straight wave guide two ends, according to photonic crystal high-order forbidden band and dielectric medium periodic field theory, etching or corrode small cycle bar-shaped trough in the Si waveguide, thus the light wave of 1.55 micron wavebands is formed high reflection;
3, utilize the present invention, can form resonant cavity between two high reflecting gratings of distributed Bragg, the resonant cavity chamber covers with the integral multiple of sufficient communication wavelengths (as 1.55 microns), makes it form resonance.
4, utilize the present invention, light absorption path (along wave guide direction) and charge carrier drift path (vertical waveguide direction) can be separated, when improving quantum efficiency, also can accelerate the response time.
5, utilize the present invention, the light signal in can the direct detection waveguide, thus form harmless the connection with planar light wave circuit, formation plane integrated circuit;
6, utilize the present invention, the preparation of photoelectric detector can with the CMOS process compatible, thereby can be integrated with microelectronic chip.
Description of drawings
Fig. 1 is the cross-sectional view of full silicon waveguide type photoelectric converter spare structure vertical waveguide of the present invention; With
Fig. 2 is the vertical view of full silicon waveguide type photoelectric converter spare structure vertical waveguide of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with instantiation, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the cross-sectional view of the vertical waveguide of a kind of full silicon waveguide type photoelectric converter spare structure provided by the invention, and preferably, this full silicon waveguide type photoelectric converter spare is suitable for 1.55 micron wavebands.The entire device preparation is followed successively by Si substrate 1, SiO from bottom to up on Si base SOI substrate
2Under-clad layer 2 and Si ridge waveguide 3; The waveguide left side is p type doped region 4 and Al or Al alloy electrode 6, and the waveguide right side is n type doped region 5 and Al or Al alloy electrode 7.
Fig. 2 is the vertical view of the full Si of 1.55 micron wavebands of the present invention waveguide type photoelectric converter spare structure vertical waveguide, waveguide is made of curved waveguide 8 and straight wave guide 3, straight wave guide 3 two ends are distributed Bragg grating (Distributed Bragg Raster, be called for short DBR) 9,10, it between the reflecting grating resonant cavity, thereby straight wave guide 3 is a resonant cavity, and the resonant cavity chamber is long to be the integral multiple of resonance wavelength, and light wave is strengthened the defective light absorption and shortened device size by resonance in resonant cavity; Straight wave guide 3 both sides then with Fig. 1 in identical, waveguide left side be p type doped region 4 and Al or Al alloy electrode 6, the waveguide right side is n type doped region 5 and Al or Al alloy electrode 7, thereby on the Si plane the horizontal p-i-n structure of formation.This horizontal p-i-n structure can be separated light absorption path (along wave guide direction) and charge carrier drift path (vertical waveguide direction), also can accelerate the response time when improving quantum efficiency.
Take the method for dry etching or wet etching that Si thin layer 3 is etched into straight wave guide 3 and curved waveguide 8; Further in Si thin layer 3 two ends etchings or corrode distributed Bragg reflecting grating 9,10, make straight wave guide 3 be resonant cavity.In addition, curved waveguide 8 is tangent with straight wave guide 3, and constitutes the waveguide of " r " shape with straight wave guide, can all enter straight wave guide from the light wave of curved waveguide incident, and a part can enter curved waveguide and have only seldom from the light wave of straight wave guide passback.Therefore, we can say that the waveguide of " r " shape has approximate unidirectional lightwave transmission characteristics; On the other hand, because the signal input can prepare the DBR of high reflectance without DBR, make resonance characteristic better.
Use ion (as boron ion B
+) inject or the method for diffusion, inject or diffusion III family's ion and annealing in waveguide 3 one sides, form p type doped region 4; And the method for local thereon employing evaporation of metal prepares Al or Al alloy electrode 6;
Use ion (as phosphonium ion P
+) inject or the method for diffusion, inject or diffusing V family ion and be annealed into n type doped region 5 at waveguide 3 opposite sides; And the part adopts the method for evaporation of metal to prepare Al or Al alloy electrode 7, thereby on the Si plane, form horizontal p-i-n structure thereon;
On straight wave guide 3, inject Si
+Ion, silver ion Ag
+Or hydrogen
Ion (H + )Deng, annealing back forms bivacancy complex compound (divacancy complex) defective, the valence band electronics transits to defective deep energy level (defective light absorption) under photon (as 1.55 micron wavebands) excites, then, and the electronics migration of on deep energy level, jumping; Perhaps, the electronics on deep energy level is subjected to secondary light and excites, and it is sent into conduction band, thereby forms the light activated defective photoconduction of secondary.
It should be noted that; above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is specific embodiments of the invention only, is not limited to the present invention, and is within the spirit and principles in the present invention all; any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (16)
1, a kind of method of making full silicon waveguide type photoelectric converter spare is characterized in that, this method may further comprise the steps:
Formation comprises the Si base SOI substrate of Si thin layer (3);
Use the method for dry etching or wet etching that Si thin layer (3) is etched into straight wave guide (3) and curved waveguide (8);
The method of using ion to inject is injected silicon ion (Si on the surface of straight wave guide (3)
+), silver ion (Ag
+) or hydrogen ion (H
+), and annealing, form complex compound defective with deep energy level;
Use lithographic method, prepare distributed Bragg reflecting grating (9,10), make straight wave guide (3) become resonant cavity at straight wave guide (3) two ends;
The method of using ion to inject or spread, inject or diffusion III family's ion and annealing in straight wave guide (3) one sides, form p type doped region (4), with inject at straight wave guide (3) opposite side or diffusing V family ion and annealing, form n type doped region (5), thereby on the substrate top layer, constitute horizontal p-i-n structure.
2, the method for manufacturing full silicon waveguide type photoelectric converter spare according to claim 1 is characterized in that, described SOI substrate is by the Si substrate (1), the SiO that arrange successively from bottom to top
2Under-clad layer (2) and Si thin layer (3) constitute.
3, the method for manufacturing full silicon waveguide type photoelectric converter spare according to claim 1, it is characterized in that described p type doped region (4) and described n type doped region (5) are provided with the Al or the Al alloy electrode (6,7) of the local preparation of method of adopting evaporation of metal respectively thereon.
4, the method for manufacturing full silicon waveguide type photoelectric converter spare according to claim 1, it is characterized in that, described curved waveguide (8) is tangent with straight wave guide, and curved waveguide (8) external port is a light wave incident end, and light wave is incorporated straight wave guide resonant cavity (3) into by curved waveguide (8).
5, the method for manufacturing full silicon waveguide type photoelectric converter spare according to claim 1 is characterized in that,
Described distributed Bragg reflecting grating has the cycle bar-shaped trough, thereby the Communication ray ripple is formed high reflection.
6, the method for manufacturing full silicon waveguide type photoelectric converter spare according to claim 5 is characterized in that,
The chamber of the resonant cavity between two reflecting gratings (3) covers with the integral multiple of sufficient communication wavelengths.
7, according to the method for claim 5 or 6 described manufacturing full silicon waveguide type photoelectric converter spares, it is characterized in that,
Described communication light wave, its wavelength are 1.55 micron wavebands.
8, a kind of full silicon waveguide type photoelectric converter has the Si base SOI substrate that comprises Si thin layer (3), it is characterized in that this optical-electrical converter comprises:
Straight wave guide (3) and curved waveguide (8), described straight wave guide (3) and curved waveguide (8) form by dry etching or the described Si thin layer of wet etching (3), wherein: be provided with distributed Bragg reflecting grating (9,10) at straight wave guide (3) two ends thus straight wave guide (3) becomes resonant cavity, and on the surface of straight wave guide (3), inject Si ion and annealing to form deep energy level defect;
Be formed on straight wave guide (3) a side p type doped region (4) and be formed on the n type doped region (5) of the opposite side of straight wave guide (3), thereby form horizontal p-i-n structure on the Si top layer.
9, full silicon waveguide type photoelectric converter according to claim 8 is characterized in that, described p type doped region (4) injects or diffused with boron ion B by the side at straight wave guide (3)
+And annealing and forming, described n type doped region (5) is by injecting at the opposite side of straight wave guide (3) or diffusion phosphonium ion P
+And form.
10, according to Claim 8 or 9 described full silicon waveguide type photoelectric converters, it is characterized in that described SOI substrate is by the Si substrate (1), the SiO that arrange successively from bottom to top
2Under-clad layer (2) and Si thin layer (3) constitute.
11, full silicon waveguide type photoelectric converter according to claim 9 is characterized in that, described p type doped region (4) and described n type doped region (5) have local Al or the Al alloy electrode (6,7) that adopts the method preparation of evaporation of metal respectively thereon.
12, full silicon waveguide type photoelectric converter according to claim 8 is characterized in that, described curved waveguide (8) is tangent with straight wave guide, and curved waveguide (8) external port is a light wave incident end, and light wave is incorporated straight wave guide resonant cavity (3) into by curved waveguide (8).
13, full silicon waveguide type photoelectric converter according to claim 12 is characterized in that, the size of the bending radius of described curved waveguide (8) is proportional to the power of the signal of the light wave that returns.
14, full silicon waveguide type photoelectric converter according to claim 8 is characterized in that, described distributed Bragg reflecting grating has the cycle bar-shaped trough, thereby the Communication ray ripple is formed high reflection.
15, full silicon waveguide type photoelectric converter according to claim 8 is characterized in that, the chamber of the resonant cavity between two reflecting gratings (3) covers with the integral multiple of sufficient communication wavelengths.
16, according to claim 14 or 15 described full silicon waveguide type photoelectric converter spares, it is characterized in that the wavelength of described communication light wave is at 1.55 micron wavebands.
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| CNA2007101219730A CN101393945A (en) | 2007-09-19 | 2007-09-19 | Full silicon waveguide type photoelectric converter and manufacturing method thereof |
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| CN104247046A (en) * | 2012-07-25 | 2014-12-24 | 惠普发展公司，有限责任合伙企业 | Avalanche photodiodes with defect-assisted silicon absorption regions |
| CN104282794A (en) * | 2013-07-12 | 2015-01-14 | 新加坡商格罗方德半导体私人有限公司 | Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same |
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| CN112201714A (en) * | 2020-09-28 | 2021-01-08 | 三明学院 | Detector and manufacturing process |
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