CN108987530B - Method for manufacturing photoelectric detector - Google Patents
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- CN108987530B CN108987530B CN201810789769.4A CN201810789769A CN108987530B CN 108987530 B CN108987530 B CN 108987530B CN 201810789769 A CN201810789769 A CN 201810789769A CN 108987530 B CN108987530 B CN 108987530B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000031700 light absorption Effects 0.000 claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 19
- 238000005253 cladding Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004321 preservation Methods 0.000 description 4
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- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
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- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A method for manufacturing a photoelectric detector comprises the following steps: step 1: sequentially growing a buffer layer, a waveguide layer, a light collection layer, a spacing layer and a light absorption layer on a substrate; step 2: selectively removing part of the spacing layer and the light absorption layer, wherein the removed part is a passive waveguide region, and the reserved part is an absorption region; and step 3: growing a covering layer on the light collection layer and the light absorption layer in a large area; and 4, step 4: manufacturing a contact layer on the covering layer; and 5: manufacturing a dielectric mask on the contact layer in the passive waveguide region; step 6: and doping the light absorption layer, the covering layer and the contact layer above the absorption region by using a diffusion doping mode. The invention can simplify the monolithic integration of the photodetector with the low-loss passive waveguide.
Description
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a manufacturing method of a photoelectric detector.
Background
The photodetector converts an optical signal into an electrical signal, and is a core component of a system such as optical fiber communication. The absorption region in the single-row carrier detector is doped in a p-type mode, and only photon-generated electrons in the device are transported. Because the effective mass of electrons is small, and the transport speed of the electrons is higher than that of holes, the single-row carrier detection region has the advantages of high bandwidth, high saturation output power and low working voltage, and has attracted much attention in recent years. Compared with a plurality of discrete devices, in order to realize the same function, the photoelectronic integrated chip has the advantages of small volume, low power consumption and the like, and can greatly improve the performance of the optical fiber communication system. The waveguide type photoelectric detector is more suitable for being integrated with a passive waveguide compared with a surface incidence detector due to the structural characteristics of the waveguide type photoelectric detector, so that the waveguide type photoelectric detector is more suitable for manufacturing a monolithic integrated optoelectronic chip. However, monolithic integration of a waveguide-type detector with a high quality passive waveguide is not easy. On the one hand, the detector absorber layer material absorbs light severely, on the other hand, heavy p-type doping is required above the detector absorber layer to provide good ohmic contact with the metal electrode. Both factors contribute significantly to the transmission loss of light for passive waveguides. In document 1, a butt coupling technique is used to monolithically integrate a probe material and a waveguide material without p-type doping, and although a low transmission loss waveguide is obtained, the manufacturing process of the device is complicated, and involves an etching and epitaxial process that needs to be precisely controlled, resulting in low device yield and increased cost.
Disclosure of Invention
It is therefore a primary objective of the claimed invention to provide a method for fabricating a photodetector to simplify monolithic integration of the photodetector with a low loss passive waveguide.
The invention provides a manufacturing method of a photoelectric detector, which comprises the following steps:
step 1: sequentially growing a buffer layer, a waveguide layer, a light collection layer, a spacing layer and a light absorption layer on a substrate;
step 2: selectively removing part of the spacing layer and the light absorption layer, wherein the removed part is a passive waveguide region, and the reserved part is an absorption region;
and step 3: growing a covering layer on the light collection layer and the light absorption layer in a large area;
and 4, step 4: manufacturing a contact layer on the covering layer;
and 5: manufacturing a dielectric mask on the contact layer in the passive waveguide region;
step 6: and doping the light absorption layer, the covering layer and the contact layer above the absorption region by using a diffusion doping mode.
The invention also provides a manufacturing method of the photoelectric detector, which comprises the following manufacturing steps:
step 1: sequentially growing a buffer layer, a waveguide layer and a light absorption layer on a substrate;
step 2: selectively removing part of the light absorption layer, wherein the removed part is a passive waveguide region, and the reserved part is an absorption region;
and step 3: growing a covering layer on the waveguide layer in the passive waveguide region and the light absorption layer in the absorption region in a large area;
and 4, step 4: manufacturing a contact layer on the covering layer;
and 5: manufacturing a dielectric mask on the contact layer in the passive waveguide region;
step 6: and doping the covering layer and the contact layer above the absorption region by using a diffusion doping mode.
According to the technical scheme, the invention has the following beneficial effects:
1. the manufacturing method of the photoelectric detector provided by the invention only dopes the detector part of the device by using a selective diffusion doping method, and the passive waveguide part is not influenced by doping impurities, so that very low optical transmission loss can be obtained;
2. the manufacturing method of the photoelectric detector provided by the invention can ensure that the doping impurities are distributed in a gradual change way in the absorption material layer of the detector by controlling the diffusion doping process, thereby realizing the monolithic integration of the low-loss passive waveguide material and the single-row carrier detector.
Drawings
For a better understanding of the objects, aspects and advantages of the present invention, reference is made to the following detailed description of the invention, which is to be read in connection with the accompanying drawings, wherein:
FIG. 1 is a schematic structural diagram of a first embodiment of the present invention;
FIG. 2 is a flowchart of a method of fabricating the first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a second embodiment of the present invention;
FIG. 4 is a flowchart of a manufacturing method according to a second embodiment of the present invention.
Detailed Description
Referring to fig. 1 and 2 of the first embodiment, taking an InP substrate as an example, the present invention provides a method for fabricating a photodetector, which includes the following steps:
step 1: an InP buffer layer 20, an InGaAsP waveguide layer 30, an InP light-collecting layer 40, an InGaAsP spacer layer 41, and an InGaAs light-absorbing layer material 50 are sequentially grown on an InP substrate 10. The InGaAsP waveguide layer 30 is doped with Si as the n-type contact material of the detector, the InP light collecting layer 40 is undoped or doped at a low concentration, and the InGaAs light absorbing layer material 50 is undoped. The InGaAsP spacer material 41 may reduce the effect of the conduction band gap difference between the InP light collecting layer 40 and the InGaAs light absorbing layer 50 and may be formed of one single wavelength InGaAsP layer or two different wavelength InGaAsP layers.
Step 2: selectively removing part of the spacing layer 41 and the light absorption layer 50, wherein the removed part is a passive waveguide region w, and the remained part is an absorption region a;
and step 3: growing an InP clad layer 60 over a large area on the light collecting layer 40 in the passive waveguide region w and the light absorbing layer 50 in the absorbing region a;
and 4, step 4: forming an InGaAs contact layer 70 on the InP cladding layer 60
And 5: a dielectric mask 71 is fabricated on the InP contact layer 70 in the passive waveguiding region w. Large area growth of dielectric mask 71 of SiO2Or SiNxSelectively removing the dielectric mask in the detector area a, and only covering the passive waveguide area w of the device by the dielectric mask 71;
step 6: the light absorbing layer 50, the capping layer 60 and the contact layer 70 above the absorption region a are doped using diffusion doping. The whole device is placed in an MOCVD reaction chamber, heat preservation is carried out in the Zn organic source atmosphere, Zn element is diffused into the InGaAs contact 70, the InP covering layer 60 and the InGaAs light absorption layer 50 by controlling the concentration of the Zn organic source, the heat preservation temperature and the time, and the doping concentration of Zn in the InGaAs light absorption layer 50 is gradually reduced from the InP covering layer 60 to the InP light collection layer 40. The Zn-doped p-type InGaAs contact layer 70 serves as the p-type contact material for the detector. In this detector, the InGaAs light absorption layer 50 is doped p-type, the photogenerated holes relax rapidly in the absorption layer material (without affecting the response speed of the detector), the photogenerated electrons diffuse to the boundary of the InP light collection layer 40, and drift rapidly under the action of the built-in electric field of the device, forming a so-called single-row carrier detector. Because only the photo-generated electrons are transported in the device, the single-row carrier detector has the characteristics of high speed, high saturation output current and low working voltage. The gradual change of the Zn doping concentration in the absorption layer of the detector introduces an additional electric field in the absorption layer, can accelerate the transportation of photo-generated electrons, and is beneficial to increasing the response bandwidth of the device. Since the dielectric mask 71 covers the passive waveguide region w of the device in the diffusion doping process, the Zn element cannot be diffused to the semiconductor material of the covering layer, so that the covering layer material used as the upper covering layer of the passive waveguide is undoped, and the light transmission loss of the passive waveguide is favorably reduced.
Referring to fig. 3 and 4 of the second embodiment, taking an InP substrate system as an example, the present invention further provides a method for fabricating a photodetector, which includes the following steps:
step 1: sequentially growing an InP buffer layer 20, an InGaAsP waveguide layer 30 and an InGaAs light absorption layer 50 on an InP substrate 10; wherein the InGaAsP waveguide layer 30 is doped with Si as the n-type contact material of the detector, and the InGaAs light absorption layer material 50 is undoped or doped at a low concentration.
Step 2: selectively removing part of the light absorption layer 50, wherein the removed part is a passive waveguide region w, and the remained part is an absorption region a;
and step 3: growing an InP clad layer 60 over a large area on the waveguide layer 30 in the passive waveguide region w and the light absorbing layer 50 in the absorbing region a;
and 4, step 4: forming an InGaAs contact layer 70 on the cap layer 60;
and 5: a dielectric mask 71 is fabricated on the contact layer 70 within the passive waveguiding region w. Large area growth of dielectric mask 71 of SiO2Or SiNxSelectively removing the dielectric mask 71 in the absorption region a, and only covering the passive waveguide region w of the device with the dielectric mask 71;
step 6: the capping layer 60 and the contact layer 70 above the absorption region a are doped using a diffusion doping method. The whole device is placed in an MOCVD reaction chamber, heat preservation is carried out in the atmosphere of a Zn organic source, and Zn element is diffused into the InGaAs contact layer 70 and the InP covering layer 60 by controlling the concentration of the Zn organic source, the heat preservation temperature and the time. The Zn-doped p-type InGaAs contact layer 70 serves as the p-type contact material for the detector. The undoped i-type InGaAs or low-doped InGaAs absorption layer 50 in the device has p-type and n-type materials on the upper and lower sides, respectively, so-called pin-type photodetectors, and the response bandwidth is determined by both photo-generated electrons and holes. In the diffusion doping process, the passive waveguide region w of the device is covered by the dielectric mask 71, and the Zn element cannot be diffused into the InP cladding layer 60 and the InGaAs absorption layer 70, so that the cladding layer material serving as the upper cladding layer of the passive waveguide is undoped, and the light transmission loss of the passive waveguide is favorably reduced.
The above-mentioned embodiments are further detailed descriptions of the objects, technical solutions and advantages of the present invention, and it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention are included in the scope of the present invention.
Claims (3)
1. A method for manufacturing a photoelectric detector comprises the following steps:
step 1: sequentially growing a buffer layer, a waveguide layer, a light collection layer, a spacing layer and a light absorption layer on a substrate;
step 2: selectively removing part of the spacing layer and the light absorption layer, wherein the removed part is a passive waveguide region, and the reserved part is an absorption region;
and step 3: growing a covering layer on the light collection layer and the light absorption layer in a large area;
and 4, step 4: manufacturing a contact layer on the covering layer;
and 5: manufacturing a dielectric mask on the contact layer in the passive waveguide region;
step 6: doping the light absorption layer, the covering layer and the contact layer above the absorption region by using a diffusion doping mode;
in the step 6, the light absorption layer, the covering layer and the contact layer above the absorption region are doped in a diffusion doping mode, only the covering layer and the contact layer above the absorption region are doped to solve the influence of doping on the passive waveguide, p-type doping is adopted for doping the light absorption layer, photogenerated holes rapidly relax in the material of the light absorption layer, photogenerated electrons diffuse to the boundary of the light collection layer, and rapidly drift under the action of a built-in electric field of the device to form the single-row carrier detector.
2. The method of claim 1, wherein the passive waveguide region is covered by a dielectric mask during the diffusion doping process, such that the cladding layer of the passive waveguide region is undoped.
3. The method of claim 1, wherein the doping concentration in the light absorption layer decreases from the capping layer to the light collection layer.
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| CN201810789769.4A CN108987530B (en) | 2018-07-18 | 2018-07-18 | Method for manufacturing photoelectric detector |
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| CN201810789769.4A CN108987530B (en) | 2018-07-18 | 2018-07-18 | Method for manufacturing photoelectric detector |
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| CN108987530B true CN108987530B (en) | 2020-04-07 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916071A (en) * | 2012-08-23 | 2013-02-06 | 华为技术有限公司 | Photodiode and manufacturing method thereof |
| CN103311807A (en) * | 2013-06-09 | 2013-09-18 | 中国科学院半导体研究所 | Manufacturing method of multi-wavelength laser array chip |
| CN106684104A (en) * | 2016-12-29 | 2017-05-17 | 中国科学院半导体研究所 | Monolithic integration balance detector and preparation method therefor |
| CN108010982A (en) * | 2017-12-01 | 2018-05-08 | 北京工业大学 | Waveguide combined type coupled mode single file carrier detector |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7282777B1 (en) * | 2004-09-27 | 2007-10-16 | California Institute Of Technology | Interband cascade detectors |
| US9477040B1 (en) * | 2014-07-17 | 2016-10-25 | Sandia Corporation | Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof |
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- 2018-07-18 CN CN201810789769.4A patent/CN108987530B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916071A (en) * | 2012-08-23 | 2013-02-06 | 华为技术有限公司 | Photodiode and manufacturing method thereof |
| CN103311807A (en) * | 2013-06-09 | 2013-09-18 | 中国科学院半导体研究所 | Manufacturing method of multi-wavelength laser array chip |
| CN106684104A (en) * | 2016-12-29 | 2017-05-17 | 中国科学院半导体研究所 | Monolithic integration balance detector and preparation method therefor |
| CN108010982A (en) * | 2017-12-01 | 2018-05-08 | 北京工业大学 | Waveguide combined type coupled mode single file carrier detector |
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