CN108987530A - The production method of photodetector - Google Patents
The production method of photodetector Download PDFInfo
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- CN108987530A CN108987530A CN201810789769.4A CN201810789769A CN108987530A CN 108987530 A CN108987530 A CN 108987530A CN 201810789769 A CN201810789769 A CN 201810789769A CN 108987530 A CN108987530 A CN 108987530A
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- 239000011248 coating agent Substances 0.000 claims abstract description 23
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- 230000008021 deposition Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 20
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 17
- 238000000151 deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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Abstract
A kind of production method of photodetector, includes the following steps: step 1: successively grown buffer layer, ducting layer, light collection layer, wall and light absorbing layer on substrate；Step 2: selective removal part wall and light absorbing layer, the part of removal are passive waveguide regions, and the part of reservation is uptake zone；Step 3: the large area deposition coating on light collection layer and light absorbing layer；Step 4: making contact layer on the cover layer；Step 5: medium exposure mask is made on the contact layer in passive waveguide region；Step 6: light absorbing layer, coating and the contact layer above uptake zone being doped in the way of diffusing, doping.The present invention can simplify the single-chip integration of photodetector Yu low-loss passive wave guide.
Description
Technical field
The present invention relates to field of optoelectronic devices, in particular to a kind of production method of photodetector.
Background technique
Photodetector converts optical signals into electric signal, is the core component of the systems such as fiber optic communication.Uniline carrier
Uptake zone p-type doping in detector, only light induced electron transports in device.Since electron effective mass is small, transport velocity is high
In hole, therefore uniline carrier detecting area has the advantages that high bandwidth, high saturation output power and low-work voltage obtain, in recent years
Obtain extensive concern.Relative to multiple discrete devices, to realize identical function, optical-elec-tronic integrated chip has function small in size
Low advantage is consumed, optical fiber telecommunications system performance can be greatly promoted.Design feature of the waveguide type photodetector due to its own
Relative to face incidence detector more suitable for integrated with passive wave guide, therefore more suitable for making single-chip integration opto chip.
But the waveguide detector and high quality passive wave guide single-chip integration are not easy to.On the one hand, detector absorbs layer material pair
Light has serious absorption, on the other hand, above detector absorbed layer heavily p-type is needed to adulterate to provide and the good Europe of metal electrode
Nurse contact.The transmission loss of light can be all dramatically increased to passive wave guide these two aspects factor.Butt-coupling technology is used in document 1
By material for detector and the waveguide material single-chip integration without p-type doping, although obtaining low transmission loss waveguide, the system of device
The process is more complicated for work, involves a need to the corrosion accurately controlled and epitaxial process, causes device yield low, increased costs.
Summary of the invention
In view of this, the main purpose of the present invention is to provide a kind of production method of photodetector, to simplify photoelectricity
The single-chip integration of detector and low-loss passive wave guide.
The present invention provides a kind of production method of photodetector, includes the following steps:
Step 1: successively grown buffer layer, ducting layer, light collection layer, wall and light absorbing layer on substrate；
Step 2: selective removal part wall and light absorbing layer, the part of removal are passive waveguide regions, reservation
Part is uptake zone；
Step 3: the large area deposition coating on light collection layer and light absorbing layer；
Step 4: making contact layer on the cover layer；
Step 5: medium exposure mask is made on the contact layer in passive waveguide region；
Step 6: light absorbing layer, coating and the contact layer above uptake zone being doped in the way of diffusing, doping.
The present invention also provides a kind of production methods of photodetector, including following making step:
Step 1: successively grown buffer layer, ducting layer and light absorbing layer on substrate；
Step 2: selective removal part light absorbing layer, the part of removal are passive waveguide regions, and the part of reservation is to inhale
Receive area；
Step 3: large area deposition coating on the light absorbing layer in ducting layer and uptake zone in passive waveguide regions；
Step 4: making contact layer on the cover layer；
Step 5: medium exposure mask is made on the contact layer in passive waveguide region；
Step 6: in the way of diffusing, doping to above uptake zone coating and contact layer be doped.
It can be seen from the above technical proposal that the invention has the following advantages:
1, the production method of this photodetector provided by the invention is only right using the method for selective diffusing, doping
The explorer portion of device is doped, and passive waveguiding sections are not influenced by impurity, therefore be can get very low light and passed
Defeated loss；
2, the production method of this photodetector provided by the invention is can to make to adulterate by controlling diffusing, doping process
Impurity graded profile in detector layers of absorbent material, to realize low-loss passive wave guide material and uniline carrier detector
Single-chip integration.
Detailed description of the invention
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail as after, in which:
Fig. 1 is the structural schematic diagram of first embodiment of the invention；
Fig. 2 is the production method flow chart of first embodiment of the invention；
Fig. 3 is the structural schematic diagram of second embodiment of the invention；
Fig. 4 is the production method flow chart of second embodiment of the invention.
Specific embodiment
It please refers to shown in Fig. 1 and Fig. 2 of first embodiment, by taking InP-base material system as an example, the present invention provides a kind of photoelectricity
The production method of detector, comprises the following steps:
Step 1: in InP substrate 10 successively grown InP buffer layer 20, InGaAsP ducting layer 30, InP light collection layer 40,
InGaAsP wall 41 and InGaAs light absorption layer material 50.Wherein InGaAsP ducting layer 30 is doped conduct using Si
The N-shaped contact material of detector, 40 non-impurity-doped of InP light collection layer or low concentration doping, InGaAs light absorption layer material 50 is without mixing
It is miscellaneous.InGaAsP material spacer layer 41 can reduce conduction band difference in band gap between InP light collection layer 40 and InGaAs light absorbing layer 50
It influences, is made of the InGaAsP layer of the InGaAsP of one layer of single wavelength or two layers of two different wave lengths.
Step 2: selective removal part wall 41 and light absorbing layer 50, the part of removal are passive waveguide regions w, are protected
The part stayed is uptake zone a；
Step 3: the large area deposition on the light absorbing layer 50 in the light collection layer 40 and uptake zone a in passive waveguide region w
InP coating 60；
Step 4: InGaAs contact layer 70 is made on InP coating 60
Step 5: medium exposure mask 71 is made on the InP contact layer 70 in passive waveguide region w.Large area deposition medium exposure mask
71, it is SiO2Or SiNx, medium exposure mask in a of selective removal detector area only has Jie in the passive waveguide region w of device
Matter exposure mask 71 covers；
Step 6: in the way of diffusing, doping to light absorbing layer 50, coating 60 and the contact layer 70 above a of uptake zone into
Row doping.By entire device as MOCVD reaction chamber among, kept the temperature under Zn organic source atmosphere, by control Zn organic source it is dense
Degree, holding temperature and time make Zn elements diffusion enter InGaAs contact 70, InP covering 60 and InGaAs light absorbing layer layer by layer
50, and the doping concentration of Zn is gradually decreased from InP coating 60 to InP light collection layer 40 in InGaAs light absorbing layer 50.Zn
P-type contact material of the p-type InGaAs contact layer 70 of doping as detector.In this detector, InGaAs light absorbing layer
50 P-type Dopings, photohole fast relaxation (not influencing detector response speed) in absorbing layer material, light induced electron expand
It is dissipated to 40 boundary of InP light collection layer, rapid drift under the action of device built in field forms so-called uniline carrier detection
Device.It is transported due to only having light induced electron in device, uniline carrier detector has high speed, high saturation output electric current and low work
The characteristic of voltage.The gradual change of Zn doping concentration introduces additional electric field in absorbed layer in detector absorbed layer, can accelerate light
Raw electronics transports, and is conducive to the responsive bandwidth for increasing device.Due to the passive waveguide region w of device during above-mentioned diffusing, doping
Inside there is the covering of medium exposure mask 71, Zn element cannot diffuse to coating semiconductor material, therefore as passive wave guide top covering
Covering layer material non-impurity-doped advantageously reduces the optical transmission loss of passive wave guide.
Shown in Fig. 3 and Fig. 4 referring again to second embodiment, by taking InP-base material system as an example, the present invention also provides one kind
The production method of photodetector, comprises the following steps:
Step 1: successively grown InP buffer layer 20, InGaAsP ducting layer 30 and InGaAs light absorption in InP substrate 10
Layer 50；Wherein InGaAsP ducting layer 30 is doped the N-shaped contact material as detector, InGaAs light absorbing layer using Si
50 non-impurity-doped of material or low concentration doping.
Step 2: the part of selective removal part light absorbing layer 50, removal is passive waveguide regions w, and the part of reservation is
Uptake zone a；
Step 3: the large area deposition on the light absorbing layer 50 in the ducting layer 30 and uptake zone a in the w of passive waveguide regions
InP coating 60；
Step 4: InGaAs contact layer 70 is made on coating 60；
Step 5: medium exposure mask 71 is made on the contact layer 70 in passive waveguide region w.Large area deposition medium exposure mask 71,
For SiO2Or SiNx, medium exposure mask 71 in a of selective removal uptake zone only has medium to cover in the passive waveguide region w of device
Film 71 covers；
Step 6: in the way of diffusing, doping to above a of uptake zone coating 60 and contact layer 70 be doped.It will be whole
A device as MOCVD reaction chamber among, kept the temperature under Zn organic source atmosphere, pass through control Zn organic source concentration, holding temperature
And the time enters Zn elements diffusion in InGaAs contact layer 70 and InP coating 60.The p-type InGaAs contact layer 70 of Zn doping
P-type contact material as detector.About 50 two sides undoped i type InGaAs or low-doped InGaAs absorbed layer in device
Respectively p-type and n-type material, i.e., so-called pin type photodetector, responsive bandwidth are determined simultaneously by light induced electron and hole
It is fixed.Due to there is the covering of medium exposure mask 71 during above-mentioned diffusing, doping in the passive waveguide region w of device, Zn element cannot be diffused to
In InP coating 60 and InGaAs absorbed layer 70, therefore as the covering layer material non-impurity-doped of passive wave guide top covering, be conducive to
Reduce the optical transmission loss of passive wave guide.
Above the told specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
Be described in detail, it should be understood that the foregoing is merely specific implementation examples of the invention, are not intended to restrict the invention, it is all
Within spirit and principles of the present invention, any modification, equivalent substitution, improvement and etc. done are all contained in of the invention comprising model
Within enclosing.
Claims (5)
1. a kind of production method of photodetector, includes the following steps:
Step 1: successively grown buffer layer, ducting layer, light collection layer, wall and light absorbing layer on substrate；
Step 2: selective removal part wall and light absorbing layer, the part of removal are passive waveguide regions, the part of reservation
For uptake zone；
Step 3: the large area deposition coating on light collection layer and light absorbing layer；
Step 4: making contact layer on the cover layer；
Step 5: medium exposure mask is made on the contact layer in passive waveguide region；
Step 6: light absorbing layer, coating and the contact layer above uptake zone being doped in the way of diffusing, doping.
2. the production method of photodetector according to claim 1, wherein the passive waveguide region is mixed in the diffusion
There is the covering of medium exposure mask during miscellaneous, therefore is not adulterated in the coating of passive waveguide region.
3. the production method of photodetector according to claim 1, wherein doping concentration in the light absorbing layer by
Coating is gradually decreased to light collection layer.
4. a kind of production method of photodetector, including following making step:
Step 1: successively grown buffer layer, ducting layer and light absorbing layer on substrate；
Step 2: selective removal part light absorbing layer, the part of removal are passive waveguide regions, and the part of reservation is uptake zone；
Step 3: large area deposition coating on the light absorbing layer in ducting layer and uptake zone in passive waveguide regions；
Step 4: making contact layer on the cover layer；
Step 5: medium exposure mask is made on the contact layer in passive waveguide region；
Step 6: in the way of diffusing, doping to above uptake zone coating and contact layer be doped.
5. the production method of photodetector according to claim 4, wherein the passive waveguide region is mixed in the diffusion
There is the covering of medium exposure mask during miscellaneous, therefore is not adulterated in the coating of passive waveguide region.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810789769.4A CN108987530B (en) | 2018-07-18 | 2018-07-18 | Method for manufacturing photoelectric detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810789769.4A CN108987530B (en) | 2018-07-18 | 2018-07-18 | Method for manufacturing photoelectric detector |
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| CN108987530B CN108987530B (en) | 2020-04-07 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070224721A1 (en) * | 2004-09-27 | 2007-09-27 | Chuang Shun L | Interband cascade detectors |
| CN102916071A (en) * | 2012-08-23 | 2013-02-06 | 华为技术有限公司 | Photodiode and manufacturing method thereof |
| CN103311807A (en) * | 2013-06-09 | 2013-09-18 | 中国科学院半导体研究所 | Manufacturing method of multi-wavelength laser array chip |
| US9477040B1 (en) * | 2014-07-17 | 2016-10-25 | Sandia Corporation | Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof |
| CN106684104A (en) * | 2016-12-29 | 2017-05-17 | 中国科学院半导体研究所 | Monolithic integration balance detector and preparation method therefor |
| CN108010982A (en) * | 2017-12-01 | 2018-05-08 | 北京工业大学 | Waveguide combined type coupled mode single file carrier detector |
-
2018
- 2018-07-18 CN CN201810789769.4A patent/CN108987530B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070224721A1 (en) * | 2004-09-27 | 2007-09-27 | Chuang Shun L | Interband cascade detectors |
| CN102916071A (en) * | 2012-08-23 | 2013-02-06 | 华为技术有限公司 | Photodiode and manufacturing method thereof |
| CN103311807A (en) * | 2013-06-09 | 2013-09-18 | 中国科学院半导体研究所 | Manufacturing method of multi-wavelength laser array chip |
| US9477040B1 (en) * | 2014-07-17 | 2016-10-25 | Sandia Corporation | Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof |
| CN106684104A (en) * | 2016-12-29 | 2017-05-17 | 中国科学院半导体研究所 | Monolithic integration balance detector and preparation method therefor |
| CN108010982A (en) * | 2017-12-01 | 2018-05-08 | 北京工业大学 | Waveguide combined type coupled mode single file carrier detector |
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