CN105185862B - There is convergence and increase powerful mushroom-shaped high speed photodetector and preparation method thereof - Google Patents
There is convergence and increase powerful mushroom-shaped high speed photodetector and preparation method thereof Download PDFInfo
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- CN105185862B CN105185862B CN201510319023.3A CN201510319023A CN105185862B CN 105185862 B CN105185862 B CN 105185862B CN 201510319023 A CN201510319023 A CN 201510319023A CN 105185862 B CN105185862 B CN 105185862B
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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Abstract
The invention discloses one kind has convergence increases powerful mushroom-shaped high speed photodetector and preparation method thereof, it is related to photoelectron technical field.Layer-of-substrate silicon that described mushroom-shaped high speed photodetector includes sequentially forming from the bottom to top, silicon oxide liner bottom, sub-wave length grating layer aperiodic, resin bed, N-shaped epitaxial layer, intrinsic layer, p-type epitaxial layer, and N-shaped contact electrode and p-type contact electrode.Described preparation method includes etching and forms sub-wave length grating aperiodic；Epitaxial growth III V race PIN photo-detector epitaxial wafer；Using bonding technology hybrid integrated photo-detector epitaxial wafer and sub-wave length grating aperiodic；Realize mushroom-shaped mesa structure finally by selective etch technique.The present invention can be widely applied for the fields such as optic communication and optical signal prosessing, have be easily integrated, high-quantum efficiency, altofrequency responsive bandwidth the features such as；Related process has the advantages that low cost, process is simple, is easily achieved simultaneously.
Description
Technical field
The present invention relates to photoelectron technical field, particularly to a kind of powerful using sub-wave length grating realization convergence increasing
Mushroom-shaped high speed photodetector and preparation method thereof.
Background technology
With the arrival of information age, various communication services assume " explosion type " development.The length to mass data for the people
The demand of Distance Transmission and broadband mobile access grows with each passing day, and society is more and more stronger to the dependency of information resources.Because light leads to
The change of letter system and network is often depending on the breakthrough of device physicses and device technology, so in the face of high speed optical communication business is held
The brought severe challenge of continuous growth, the performance effectively improving crucial opto-electronic device in system becomes current matter of utmost importance.
High speed high-quantum efficiency photo-detector is crucial light receiving element in high speed optical communication system.Although traditional structure
Vertical-type PIN photo-detector disclosure satisfy that the bandwidth requirement of high speed optical communication, but because vertical-type PIN photo-detector is intrinsic
Efficiency-bandwidth prodnct restriction, the raising of bandwidth can directly result in the decline of device efficiency.In order to meet the same of bandwidth requirement
The efficiency of Shi Tigao device, improves the intrinsic efficiency-bandwidth prodnct of vertical-type PIN photo-detector and limits the unfavorable shadow to device performance
Ring, there has been proposed resonant cavity enhanced (RCE) photo-detector.RCE photo-detector be by Katsumi Kishino and
M.SelimPropose.Its basic structure is that absorbed layer is inserted in resonator cavity, due to the enhancement effect of resonator cavity,
Such devices both can obtain higher quantum efficiency in the case of relatively thin absorbed layer, decrease photo-generated carrier simultaneously and exist
The transition time of absorbed layer is it is thus possible to obtain high quantum efficiency and high response speed simultaneously.But, for optic communication system
Mainly based on InP based material, the refractivity and the InP based material of InP Lattice Matching between compares the semiconductor device of system
Little, it is difficult to obtain practical distribution Bragg reflector (DBR)；Additionally, optic communication device is mainly with III-V race's semiconductor device
Based on, yet suffer from difficulty with the silicon based photon based on CMOS technology or the integrated of electronic device.
In order to meet high speed optical communication for bandwidth of a device and the higher and higher requirement of efficiency, need in a hurry at present to design one
Plant high performance new photo-detector.
Content of the invention
The present invention is in order to solve the mutual system of semiconductor photodetector quantum efficiency and frequency response bandwidth in prior art
Problem about, improves further to existing vertical-type PIN photo-detector, devises a kind of integrated based on Si material mixing, and
A kind of convergence using sub-wave length grating realization of photo-detector possessing high speed high-quantum efficiency increases powerful mushroom-shaped height
Fast photo-detector and preparation method thereof.
One kind that the present invention provides utilizes sub-wave length grating to realize converging the powerful mushroom-shaped high speed photodetector of increasing, bag
Include the layer-of-substrate silicon sequentially forming from the bottom to top, silicon oxide liner bottom, sub-wave length grating layer aperiodic, resin bed, N-shaped extension
Layer, intrinsic layer, p-type epitaxial layer, and the N-shaped contact electrode being formed on N-shaped epitaxial layer and the p being formed in p-type epitaxial layer
Type contacts electrode.
Wherein, described N-shaped epitaxial layer, intrinsic layer, p-type epitaxial layer collectively constitute mushroom-shaped mesa structure, and described is intrinsic
The area of layer is less than the area of p-type epitaxial layer, is less than the area of N-shaped epitaxial layer simultaneously；The area of described p-type epitaxial layer is less than n
The area of type epitaxial layer；
Wherein, sub-wave length grating layer described aperiodic includes the light with specific pattern being made up of high-index material
Grid.
Wherein, described specific pattern be one-dimensional non-period pattern, two-dimentional non-period pattern or three-dimensional non-period pattern.
Preferably, the grating of described one-dimensional non-periodic pattern is the cycle and dutycycle strip grating with position change；
The grating of described two dimension non-periodic pattern is the cycle and dutycycle is (round with the concentric ring grating of position change or graphic array
The spotted array that point, rectangle or other patterns are formed) grating；The grating of described three-dimensional non-periodic pattern is cycle, dutycycle
With grating height all with the grating of position change.
Preferably, between 100nm～1.6 μm, dutycycle is the screen periods in sub-wave length grating layer described aperiodic
15%～85%；Optical grating reflection rate is more than 30%.
The present invention also provides a kind of utilization sub-wave length grating to realize converging the powerful mushroom-shaped high speed photodetector of increasing
Preparation method, methods described includes step：
S1, on the substrate have high index-contrast, etching forms sub-wave length grating aperiodic；
S2, in III-V race's semiconductive material substrate Epitaxial growth III-V race PIN photo-detector epitaxial wafer；
S3, using bonding technology hybrid integrated III-V race PIN photo-detector epitaxial wafer and sub-wave length grating aperiodic；
S4, realizes mushroom-shaped mesa structure by selective etch technique, prepares mushroom-shaped high speed photodetector.
Preferably, in step S1, the described substrate with high index-contrast is SOI substrate, by bottom Si, SiO2And top
Layer Si three-decker composition, aperiodic, sub-wave length grating was produced in top layer Si.
Preferably, in step S2, using MOCVD (MOCVD) or MBE (outside molecular beam
Prolonging) equipment is in InP substrate Epitaxial growth InGaAs photo-detector.
Preferably, epitaxial growth temperature is maintained at 600 DEG C to 700 DEG C.
Preferably, in step S3, described bonding technology includes：Direct Bonding, SiO2-SiO2Bonding, Au/In bonding, benzo
Cyclobutane bonding chip and sol-gel bonding chip.
Preferably, when using benzocyclobutene Wafer Bonding Process, annealing temperature is 150～350 DEG C, and annealing time is
1～4 hour.
The present invention proposes a kind of photo-detector structure of hybrid integrated, solves conventional semiconductors photo-detector quantum effect
Rate and the mutual restriction of frequency response bandwidth, can be widely applied for the fields such as optic communication and optical signal prosessing, and device has and is easy to
The features such as integrated, high-quantum efficiency, altofrequency responsive bandwidth；Related process has low cost, process is simple, is easily achieved simultaneously
The advantages of.
Brief description
Fig. 1 increases powerful mushroom-shaped high speed photodetector structure for the present invention based on the convergence that has of sub-wave length grating
Schematic diagram；
Fig. 2 be the present invention photo-detector in one-dimensional aperiodic sub-wave length grating schematic diagram, grating pattern is bar shaped, is suitable for
In TE/TM polarized light；
Fig. 3 is donut for two dimension sub-wave length grating schematic diagram aperiodic in the photo-detector of the present invention, grating pattern,
It is applied to axial direction/angularly polarized light；
Fig. 4 is rectangular array for two dimension sub-wave length grating schematic diagram aperiodic in the photo-detector of the present invention, grating pattern,
This grating polarization is insensitive；
Fig. 5 is the sub-wavelength grate structure schematic diagram of the present invention；
Fig. 6 a～Fig. 6 f is the mushroom-shaped photo-detector end-process flow chart of the present invention.
Specific embodiment
Below in conjunction with the embodiment of the present invention and accompanying drawing, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description is it is clear that described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Based on this
Embodiment in bright, the every other reality that those of ordinary skill in the art are obtained on the premise of not making creative work
Apply example, broadly fall into the scope of protection of the invention.
First, referring to Fig. 1, the present invention have convergence increase powerful mushroom-shaped high speed photodetector, including by down to
On sequentially form layer-of-substrate silicon 1, silicon oxide liner bottom 2, sub-wave length grating layer aperiodic 3, resin bed 4, N-shaped epitaxial layer 7, this
Levy layer 8, p-type epitaxial layer 9, and the N-shaped being formed on N-shaped epitaxial layer 7 contacts electrode 5 and the p being formed in p-type epitaxial layer 9
Type contacts electrode 6, and the area of described intrinsic layer 8 is less than the area of p-type epitaxial layer 9, is less than the area of N-shaped epitaxial layer 7 simultaneously；
The area of described p-type epitaxial layer 9 is less than the area of N-shaped epitaxial layer 7.Wherein, sub-wave length grating layer described aperiodic 3 is included by silicon
What material was made has sub-wave length grating aperiodic of specific pattern.Described N-shaped epitaxial layer 7, intrinsic layer 8 and p-type epitaxial layer 9 are altogether
With the mushroom-shaped high speed photodetector of composition.
In the present invention, mushroom-shaped for upper strata high speed photodetector and sub-wave length grating aperiodic are integrated, due to material
Between have larger refractivity (refractive index of Si be 3.5, SiO2Refractive index be 1.45), can obtain compatible with CMOS technology
Nanoscale high index-contrast sub-wave length grating；Using the reflecting focal characteristic of sub-wave length grating aperiodic, incident illumination is made to pass through
Reflected by sub-wave length grating aperiodic behind uptake zone (intrinsic layer 8) and focus on uptake zone, realize influx and translocation, improve optical detection
The external quantum efficiency of device.
Referring back to Fig. 2～Fig. 4, in the present invention aperiodic sub-wave length grating layer 3 grating pattern can be one-dimensional, two-dimentional
Or 3-D graphic.Specifically, Fig. 2 is the pattern instance of sub-wave length grating one-dimensional aperiodic, grating pattern be bar shaped it is adaptable to
TE/TM polarized light；Fig. 3 is the example of sub-wave length grating two-dimentional aperiodic, and grating pattern is donut it is adaptable to axial direction/angle
To polarized light；Fig. 4 is the example of sub-wave length grating two-dimentional aperiodic, and grating pattern is rectangular array, and this grating polarization is insensitive.
Preferably, the screen periods in sub-wave length grating layer described aperiodic are between 100nm～1.6 μm, and dutycycle is 15%～
85%, grating thickness is 100～800nm, and optical grating reflection rate is more than 30%.As Fig. 5, described aperiodic, sub-wave length grating referred to often
Projection in group screen periods and the width sum of groove all differ, described screen periods refer in optical grating construction each group convex
Play the width sum with groove.
The present invention also provides a kind of preparation method having and converging the powerful mushroom-shaped high speed photodetector of increasing, mainly adopts
Realize hybrid integrated opto-electronic device with bonding technology, specifically, by silicon substrate sub-wave length grating aperiodic and III-V race's quasiconductor
Material devices pass through bonding technology hybrid integrated.Complete preparation process includes：
First stage, etching sub-wave length grating aperiodic on soi substrates；
Second stage, in the mushroom-shaped height of III-V race's semiconductive material substrate Epitaxial growth III-V race's semi-conducting material
Fast photo-detector；
Phase III, sub- for aperiodic using bonding technology hybrid integrated mushroom-shaped high speed photodetector n epitaxial layer and SOI base
Wave length grating；Described bonding technology includes Direct Bonding, SiO2-SiO2Bonding, Au/In bonding, benzocyclobutene (BCB) are brilliant
Piece bonding and sol-gel bonding chip etc. realize silicon substrate sub-wave length grating aperiodic and mushroom-shaped high speed photodetector in interior
The method of hybrid integrated.When realizing silicon substrate sub-wave length grating aperiodic and mushroom using benzocyclobutene (BCB) Wafer Bonding Process
During mushroom type high speed photodetector hybrid integrated, annealing temperature is 150～350 DEG C, and annealing time is 1～4 hour.
Fourth stage, realizes mushroom-shaped mesa structure by selective etch technique, and it is powerful that preparation has convergence increasing
Mushroom-shaped high speed photodetector.
Further below with the acyclic concentric ring grating in Fig. 3, epitaxial growth InGaAs (indium GaAs, also by
Referred to as InGaAsP) photo-detector and by benzocyclobutene (BCB) Wafer Bonding Process integrated as a example, the present invention is described
The preparation method increasing powerful mushroom-shaped high speed photodetector is converged based on having of sub-wave length grating, the method specifically wraps
Include step：
The first step, prepares aperiodic in concentric annular SOI (Silicon-On-Insulator, the silicon in dielectric substrate) non-week
Phase sub-wave length grating：
SOI substrate includes layer-of-substrate silicon 1, silicon oxide liner bottom 2 and top silicon layer, described sub-wave length grating layer aperiodic
3 are produced in top silicon layer, SiO2Thickness degree is 500nm, and the thickness of top layer Si is 500nm.
Design plane sub-wave length grating aperiodic pattern, wherein regional diameter shared by concentric annular pattern aperiodic are (i.e.
The outside diameter of outer ring annulus) it is 300 μm；Grating structural parameter by rigorous couple-wave analysis method (RCWA) simulation calculation, and really
Fixed specific grating structural parameter is it is desirable to the phase distribution of gratingMeet：
Wherein λ is lambda1-wavelength, and f is grating focal length,It is the phase value at r=0, r is a variable, represents
On donut grating planar, arbitrfary point is to the distance in the center of circle.When the phase distribution of grating meets above formula, grating can be real
The now convergence of light.
Set a length of 1.55 μm of incident light wave, when grating focal length is 6 μm, from the center of circle of donut grating outwards, each
Group is raised and groove is as screen periods, referring to Fig. 5, provides part grating structural parameter：First group of screen periods be
0.73 μm, groove width is 0.6 μm；Second group of screen periods is 0.66 μm, and groove width is 0.4 μm；3rd group of screen periods are 0.81 μm,
Groove width is 0.16 μm；4th group of screen periods are 0.7 μm, and groove width is 0.14 μm；……
Using ZEP520 positive electronic corrosion-resistant as electron beam resist, using electron beam exposure apparatus in top silicon layer
Upper making grating mask pattern；
Make sub-wave length grating aperiodic using ICP dry etching, grating thickness determines (500nm) by top layer Si thickness；
Finally, remove ZEP520 positive electronic corrosion-resistant.
Second step, grows InGaAs (indium GaAs, also referred to as InGaAsP) photo-detector epitaxial wafer：
Using MOCVD (Metal-organic Chemical Vapor Deposition, metallo-organic compound chemistry
Gaseous phase deposition) equipment is in InP (indium phosphide) Grown InGaAs photo-detector epitaxial wafer；
Specifically, growth temperature is maintained at 650 DEG C, grows 1 μm of InP cushion first, then grows 200nm successively
InGaAs P type contact layer, 240nm InP etching stop layer, 500nm InGaAs absorbed layer, 450nm InP space layer, 40nm
InGaAs etching stop layer, 200nm InP n-contact layer, 50nm InGaAs etching stop layer, finally grow 200nm InP
Cushion.
3rd step, will be integrated with photo-detector epitaxial wafer for SOI base sub-wave length grating aperiodic：
It is 1cm that InGaAs photo-detector epitaxial wafer is cleaved into area2Extension sample；
By deionized water, ethanol, acetone, extension sample and SOI base sub-wave length grating are carried out；
Using sol evenning machine, one layer of 1 μ m-thick benzocyclobutene (BCB) tree is uniformly coated on SOI base sub-wave length grating aperiodic
Fat；
Using fixture by benzocyclobutene (BCB) resin bed on SOI base sub-wave length grating aperiodic and extension sample
The InP buffer layer contacts that finally grow simultaneously are fixed, and together put in annealing furnace, and annealing furnace temperature rises to 250 DEG C, 2 hours
Temperature fall afterwards, realizes the bonding between sub-wave length grating aperiodic and extension sample, obtains integrated sample.
4th step, increases powerful mushroom-shaped high speed photodetector system based on the convergence that has of sub-wave length grating aperiodic
Standby：
By deionized water, ethanol, acetone, integrated sample is carried out；
In conjunction with Fig. 6 a～Fig. 6 f, mainly include the following steps that：
First, through photoetching treatment, produce the p-type contact electrode 6 of Pt-Ti-Pt-Au using magnetic control sputtering system, such as
Fig. 6 b.The center incidence hole footpath of described p-type contact electrode 6 is 30 μm；
Secondly, produce a diameter of 42 μm of circular upper table surface by photoetching and wet etching method, as p-type epitaxial layer
9, such as Fig. 6 c, the wet etching to InP and InGaAs material, employ HCl/H respectively3PO4(mol ratio 1:1) corrosive liquid and
H2SO4/H2O2/H2O (mol ratio 1:1:2) corrosive liquid, etching-stop to n-contact layer, referring to Fig. 6 c.
Using H2SO4/H2O2/H2O (mol ratio 1:1:2) corrosive liquid selective corrosion InGaAs absorbed layer, obtains intrinsic layer
8, form mushroom-shaped mesa structure, referring to Fig. 6 d.
Produce N-shaped through photoetching treatment and magnetron sputtering and contact electrode 5, and corrode the circular leave from office 62 μm of diameter
Face, as N-shaped epitaxial layer 7, referring to Fig. 6 e and Fig. 6 f.Obtain mushroom-shaped high speed photodetector.
Described mushroom-shaped high speed photodetector polyimides are passivated, form a passivation layer on surface,
Perforate on described passivation layer, and make Ti-Au extraction electrode using magnetron sputtering apparatus, each extraction electrode passes through in passivation layer
Perforate contacts electrode 5 with N-shaped and p-type contact electrode 6 electrically connects, and external electric signal is conducted to each contact electrode.
The present invention successfully proposes a kind of silicon substrate hybrid integrated photo-detector structure and is based on sub-wave length grating aperiodic
Have convergence increase powerful mushroom-shaped high speed photodetector, solve conventional semiconductors photo-detector quantum efficiency and frequency
The mutual restriction of responsive bandwidth, can be widely applied for the fields such as optic communication and optical signal prosessing, the collection to opto-electronic device from now on
One-tenthization produces important impact.In the solution of the present invention, realize the silicon substrate aperiodic with special pattern using bonding technology
Sub-wave length grating and III-V race's semi-conducting material photo-detector hybrid integrated.Aperiodic sub-wave length grating reflecting focal characteristic,
So that incident illumination is passed through behind uptake zone (intrinsic layer) by optical grating reflection, and focus on uptake zone again, realizing effectively absorbing increases, and carries
High external quantum efficiency.Accordingly, with respect to prior art, the present invention has following clear superiority：
(1) utilize the reflecting focal function of sub-wave length grating aperiodic, solve mutual between bandwidth and efficiency very well
Restricting relation is it is achieved that the photo-detector of efficient high-speed.
(2) disclosure satisfy that the application of random polarization state incident illumination.
(3) it is easily integrated：III-V race's p-i-n structure photo-detector and SOI base Asia aperiodic ripple are realized by bonding method
Long grating is integrated；Product and its preparation process low cost, process is simple, it is easily achieved.
(4) grating performance is good：Using SOI material, there is larger refractivity, obtain compatible with CMOS technology
The sub-wave length grating of nanoscale high index-contrast.
Embodiment of above is merely to illustrate the present invention, and not limitation of the present invention, common about technical field
Technical staff, without departing from the spirit and scope of the present invention, can also make a variety of changes and modification, therefore all
Equivalent technical scheme falls within scope of the invention, and the real protection scope of the present invention should be defined by the claims.
Claims (2)
1. have convergence increase powerful mushroom-shaped high speed photodetector it is characterised in that：Including sequentially form from the bottom to top
Layer-of-substrate silicon, silicon oxide liner bottom, sub-wave length grating layer aperiodic, resin bed, N-shaped epitaxial layer, intrinsic layer, p-type epitaxial layer, with
And the N-shaped being formed on N-shaped epitaxial layer contacts electrode and the p-type contact electrode being formed in p-type epitaxial layer；
Wherein, described N-shaped epitaxial layer, intrinsic layer, p-type epitaxial layer collectively constitute mushroom-shaped mesa structure, described intrinsic layer
Area is less than the area of p-type epitaxial layer, is less than the area of N-shaped epitaxial layer simultaneously；The area of described p-type epitaxial layer is less than outside N-shaped
Prolong the area of layer；
Described aperiodic, sub-wave length grating layer included the grating with specific pattern be made up of high-index material, described specific
Pattern is one-dimensional non-period pattern, two-dimentional non-period pattern or three-dimensional non-period pattern；
The grating of described one-dimensional non-periodic pattern is the cycle and dutycycle strip grating with position change；Described two-dimentional non-week
The grating of phase property pattern is cycle and dutycycle with the concentric ring grating of position change or graphic array grating；Described three-dimensional non-week
The grating of phase property pattern is the cycle, dutycycle and grating height are all with the grating of position change；
Regional diameter shared by described Circular Concentric Gratings is 300 μm, the phase distribution of gratingMeet：
Wherein λ is lambda1-wavelength, and f is grating focal length,It is the phase value at r=0, r is a variable, represents concentric circular
On ring grating planar, arbitrfary point is to the distance in the center of circle；When the phase distribution of grating meets above formula, grating realizes the convergence of light；
Between 100nm～1.6 μm, dutycycle is 15%～85% to screen periods in described aperiodic sub-wave length grating layer；Grating
Thickness is 100～800nm, and optical grating reflection rate is more than 30%.
2. a kind of utilization sub-wave length grating is realized converging the preparation method increasing powerful mushroom-shaped high speed photodetector, its feature
It is：Methods described comprises the steps：
S1, on the substrate have high index-contrast, etching forms sub-wave length grating aperiodic；Described has high index-contrast
Substrate be SOI substrate, by bottom Si, SiO2With top layer Si three-decker composition, aperiodic, sub-wave length grating was produced on top layer
On Si；
S2, in III-V race's semiconductive material substrate Epitaxial growth III-V race PIN photo-detector epitaxial wafer；
Using MOCVD or MBE equipment in InP substrate Epitaxial growth InGaAs photo-detector epitaxial wafer, epitaxial growth temperature is protected
Hold at 600 DEG C to 700 DEG C, specially：
Grow 1 μm of InP cushion first, then grow 200nm InGaAs P type contact layer, 240nm InP etch-stop successively
Only layer, 500nm InGaAs absorbed layer, 450nm InP space layer, 40nm InGaAs etching stop layer, 200nm InP N-shaped connect
Contact layer, 50nm InGaAs etching stop layer, finally grow 200nm InP cushion；
S3, using bonding technology hybrid integrated III-V race PIN photo-detector epitaxial wafer and sub-wave length grating aperiodic, is collected
Become sample；Described bonding technology includes：Direct Bonding, SiO2-SiO2Bonding, Au/In bonding, benzocyclobutene bonding chip or
Sol-gel bonding chip；When using benzocyclobutene Wafer Bonding Process, annealing temperature is 150～350 DEG C, during annealing
Between be 1～4 hour；
S4, realizes mushroom-shaped mesa structure by selective etch technique, prepares mushroom-shaped high speed photodetector, specially：
By deionized water, ethanol, acetone, integrated sample is carried out；
Through photoetching treatment, produce the p-type contact electrode of Pt-Ti-Pt-Au using magnetic control sputtering system；
Produce a diameter of 42 μm of circular upper table surface by photoetching and wet etching method, as p-type epitaxial layer, to InP and
The wet etching of InGaAs material, employs HCl/H respectively3PO4Corrosive liquid and H2SO4/H2O2/H2O corrosive liquid, etching-stop arrives
N-contact layer；
Using H2SO4/H2O2/H2O corrosive liquid selective corrosion InGaAs absorbed layer, obtains intrinsic layer, forms mushroom-shaped table top knot
Structure；
Produce N-shaped through photoetching treatment and magnetron sputtering and contact electrode, and corrode the circular following table 62 μm of diameter, as
N-shaped epitaxial layer；
The integrated sample polyimides of above-mentioned process are passivated, form a passivation layer in integrated sample surfaces, in institute
State perforate on passivation layer, and make Ti-Au extraction electrode using magnetron sputtering apparatus, each extraction electrode passes through opening in passivation layer
Hole contacts electrode and the electrical connection of p-type contact electrode with N-shaped, and external electric signal is conducted to each contact electrode.
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| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
| CN106356416B (en) * | 2016-11-28 | 2018-02-06 | 中国电子科技集团公司第十三研究所 | The preparation method of high-speed photodetector chip |
| CN106409969A (en) * | 2016-11-30 | 2017-02-15 | 苏州苏纳光电有限公司 | UTC InGaAs photoelectric detector and manufacturing method thereof |
| WO2019180165A1 (en) * | 2018-03-22 | 2019-09-26 | Iee International Electronics & Engineering S.A. | Photodetector |
| CN111413757B (en) * | 2020-03-02 | 2022-02-25 | 北京邮电大学 | Columnar lens, columnar beam splitting lens, optical detector and optical detector array |
| CN111477703B (en) * | 2020-04-14 | 2022-01-18 | 北京工业大学 | Large-aperture high-speed photoelectric detector |
| CN113707742A (en) * | 2021-08-25 | 2021-11-26 | 江苏索尔思通信科技有限公司 | High-speed photoelectric detector and preparation method thereof |
| CN114188426B (en) * | 2022-02-17 | 2022-06-14 | 福建慧芯激光科技有限公司 | Photoelectric detector with high bandwidth and high responsivity |
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