CN106449806A - Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating - Google Patents
Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating Download PDFInfo
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- CN106449806A CN106449806A CN201610825756.9A CN201610825756A CN106449806A CN 106449806 A CN106449806 A CN 106449806A CN 201610825756 A CN201610825756 A CN 201610825756A CN 106449806 A CN106449806 A CN 106449806A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 230000000737 periodic effect Effects 0.000 title abstract 4
- 238000001914 filtration Methods 0.000 claims abstract description 26
- 230000008859 change Effects 0.000 claims description 19
- 238000005286 illumination Methods 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 3
- 235000012489 doughnuts Nutrition 0.000 claims description 3
- 239000002872 contrast media Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 230000012010 growth Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
Abstract
The invention proposes a narrow-linewidth and high-performance tunable optical detector based on a non-periodic sub-wavelength grating, and relates to the technical field of photoelectron. The high-performance optical detector comprises a filtering cavity bottom lens (DBR), a filtering cavity, a filtering cavity top lens (DBR), an absorption cavity and a non-periodic sub-wavelength grating oblique reflection mirror from bottom to top. In the optical detector, the optical cavity length is changed by electric tuning or thermal tuning to achieve a selective tuning function of wavelength; and the non-periodic sub-wavelength grating inclined reflection mirror is used for achieving oblique reflection on incident light at different angles for many times, so that the incident light can be repeatedly absorbed by an absorption layer, and the high-speed and high-quantum efficiency performance of a device is achieved. The optical detector has the characteristics of narrow linewidth, high quantum efficiency, high frequency response bandwidth and the like, is easy to integrate and is tunable, and can be widely applied to the field of optical communication and optical signal processing.
Description
Technical field
The present invention relates to photoelectron technical field, more particularly to one kind realize multiple reflections using sub-wave length grating aperiodic
The high performance photo-detector of the narrow line width regulatable of function.
Background technology
With the continuous development of information age, more Large Copacity, the data transfer of longer distance become what people constantly pursued
Target.Change progress due to optical communication system and network is often depending on development of the device in material, technique and structure, because
And, in the severe challenge in the face of growing high speed optical communication business need, effectively improve crucial light in optical communication system
The performance of electronic device will become a kind of effective approach.
In optical communication system, the photo-detector of high speed high-quantum efficiency is a kind of key opto-electronic device therein, rises
Indispensable effect.At present, although traditional vertical-type PIN photo-detector can still meet the bandwidth of current high speed optical communication
Require, but limited by its intrinsic efficiency-bandwidth prodnct, the raising of bandwidth is intended to premised on sacrificing efficiency.For solving this
Contradiction, resonant cavity enhanced (RCE) photo-detector arises at the historic moment.Its basic structure is that absorbed layer is inserted in resonator cavity,
Using the enhancement effect of resonator cavity, can be in the case of thinning absorber thickness, it is ensured that higher quantum efficiency, same with this
When, response speed will also be greatly improved.But as traditional semiconductor device is based on indium phosphide (InP) based material, folding
Penetrate rate difference less, it is difficult to the distributed bragg reflector mirror (DBR) with practical value is obtained, so as to realize with larger enhancing
The resonator cavity of effect.
Difficult for solving this, be badly in need of a kind of photo-detector of novel high-performance of design, with meet optical communication system for
The requirement that bandwidth of a device and efficiency are increasingly improved.
Content of the invention
The present invention is to solve the quantum efficiency of semiconductor photodetector and the mutual restriction problem of frequency response bandwidth, humorous
Shake on the basis of cavity-enhanced (RCE) PIN photo-detector and be further improved, design a kind of based on sub-wave length grating reality aperiodic
Now repeatedly deflecting reflection with the high performance photo-detector of narrow line width regulatable, to reach high speed, high-quantum efficiency, preferable
Wavelength selectivity and wider wavelength tuning range.
The narrow line width regulatable high-performance optical detector based on sub-wave length grating aperiodic that the present invention is provided, is three mirrors two
Cavity configuration, three mirrors refer to two groups of distribution Bragg reflectors (DBR) and a sub-wave length grating oblique reflection aperiodic mirror；Two chambeies refer to filter
Ripple chamber and absorbing cavity.Device architecture is respectively from bottom to top：First group of DBR, filtering chamber, second group of DBR, absorbing cavity and aperiodic
Sub-wave length grating oblique reflection mirror.
Wherein, first group of DBR, filtering chamber and second group of DBR collectively form the Fabry-Perot with wavelength selection function
Resonator cavity, two groups of DBR respectively constitute the top mirror in filtering chamber and bottom mirror, as top mirror and bottom mirror DBR by with larger refractive index
The bi-material of difference is constituted.Absorbing cavity is made up of photo-detector structure, positioned at filtering chamber top mirror and aperiodic sub-wave length grating oblique
Between reflecting mirror, the incident illumination in filtered chamber is carried out repeatedly absorbing repeatedly.
Wherein, the sub-wave length grating aperiodic oblique reflection mirror be by high index-contrast material make with specific grating
The planar medium oblique reflection mirror of structure.The sub-wave length grating aperiodic oblique reflection mirror can change reflected light according to design requirement
With respect to the direction of incident illumination, the oblique reflection with certain angle is realized, while keeping higher reflectance.
Wherein, the specific optical grating construction is one-dimensional, two-dimentional or three-dimensional sub-wave length grating aperiodic.
Preferably, one-dimensional sub-wave length grating aperiodic is cycle and dutycycle with position change in one-dimensional square
Strip grating；Sub-wave length grating aperiodic of the two dimension is cycle and dutycycle with the same of change in location on two dimensional surface
Heart Circular Ring Grating, and block, column or the graphic array profile grating such as poroid；Three-dimensional sub-wave length grating aperiodic
It is grating that each gratings strips on the basis of described two-dimentional sub-wave length grating aperiodic or graphic array tile height change.
Preferably, each screen periods of the sub-wave length grating aperiodic oblique reflection mirror are between 0.3 μm～1.8 μm,
Grating dutycycle is 15%～85%, and grating is highly that 0.1～1.2 μm, reflectance reaches more than 70%, realizes the reflected beams direction
Change 0.1 °～30 °.
Advantages of the present invention and good effect are：The narrow line width regulatable based on sub-wave length grating aperiodic of the present invention
High-performance optical detector, is changed the optical cavity length in filtering chamber, realizes the selecting tuning work(of wavelength by electric tuning or thermal tuning
Can, using the multiple reflections mechanism that aperiodic, sub-wave length grating was formed with filtering chamber top mirror DBR, realize the high efficiency of different angles
Oblique reflection is acted on, and efficiently reduces the restricting relation between the quantum efficiency of photo-detector and frequency response bandwidth, while reaching
To two-forty and high-quantum efficiency.The present invention has easy of integration, narrow linewidth, tunable, high-quantum efficiency, altofrequency responsive bandwidth
The features such as, can be widely applied for optic communication and optical signal prosessing field.
Description of the drawings
Fig. 1 shows for the structure of the narrow line width regulatable high-performance optical detector based on sub-wave length grating aperiodic of the present invention
It is intended to；
Fig. 2 is intended to for one-dimensional sub-wave length grating aperiodic oblique reflection mirror in the photo-detector of the present invention；
Fig. 3 a～Fig. 3 c is three kinds of structures of two-dimentional sub-wave length grating oblique reflection aperiodic mirror in the photo-detector of the present invention
Schematic diagram；Fig. 3 a is rectangular array grating, and it is donut grating that Fig. 3 b is hexagonal array grating, Fig. 3 c；
Fig. 4 is intended to for three-dimensional sub-wave length grating oblique reflection aperiodic mirror in the photo-detector of the present invention.
In figure：
1- incident illumination；2- filtering bottom of chamber mirror；3- filtering chamber top mirror；4- sub-wave length grating aperiodic oblique reflection mirror；
5- filters chamber；6- absorbing cavity.
Specific embodiment
In conjunction with the embodiment of the present invention and accompanying drawing, the structure in inventive embodiments, technical scheme will be carried out below complete clear
Describe clearly.The present embodiment is one of section Example of the present invention, rather than whole embodiments.All in reality of the present invention
On the basis of applying example, the other embodiment that those of ordinary skill in the art are obtained on the premise of creative work is not made, all
Belong to protection scope of the present invention.
Referring to Fig. 1, the narrow line width regulatable high-performance optical detector based on sub-wave length grating aperiodic of the present invention, growth
On GaAs (GaAs) substrate, the filtering bottom of chamber mirror 2 that sequentially forms from the bottom to top, filtering chamber 5, filtering chamber top mirror 3, absorbing cavity
6th, sub-wave length grating aperiodic oblique reflection mirror 4, constitutes three mirrors, two cavity configuration.Devices use molecular beam epitaxy (MBE) or metal have
The technology epitaxial growths such as machine unit's chemical gaseous phase deposition (MOCVD).Narrow linewidth is less than 2nm for spectral line width, and the light of the present invention is visited
Survey device tunable range and be more than 10nm.
Filtering bottom of chamber mirror 2 is the dbr structure being made up of GaAs GaAs/ aluminum gallium arsenide AlGaAs material, filters chamber 5
It is made up of GaAs material, filtering chamber top mirror 3 is the dbr structure being made up of GaAs/AlGaAs material.
The absorbing cavity 6 is made up of photo-detector structure, and the photo-detector structure can adopt PIN structural, single file to carry
Sub (UTC) structure of stream, part depletion absorb (PDA) structure or snowslide (APD) photoelectric diode structure.
In the embodiment of the present invention, the absorbing cavity 6 is by indium phosphide InP/ indium GaAs InGaAs PIN photo-detector structure
Composition.The sub-wave length grating aperiodic oblique reflection mirror 4 is made up of the material with high index-contrast.Wherein, InP/GaAs
Big mismatch heteroepitaxial growth, using InP low temperature buffer layer method, effectively alleviates the lattice of InP based material and GaAs based material
Mismatch problems, realize the single-chip integration of device.
Filtering chamber 5 has selecting tuning effect to lambda1-wavelength, and the structure of its Fabry-Perot resonant cavity type is to incidence
Light 1 has wavelength selection function；In order to realize the tuning performance of device, it will usually be limited Si Tanke effect according to SQW
(QCSE), carrier injection, thermal tuning and Kerr effect, add tuning electrode in filtering chamber both sides, using electric tuning or heat
The optical cavity length for tuning to change filtering chamber 5, so that incident peak wavelength changes, reaches tuning purpose.
In the present invention, sub-wave length grating oblique reflection aperiodic mirror 4 being placed in 6 top of absorbing cavity, incident illumination is realized in absorbing cavity
Interior multiple reflections, reach repeatedly light absorbing effect.Aperiodic, sub-wave length grating adopted the InP/ sky with high index-contrast
Prepared by gas material, also include that other have the material of high index difference.
The filtered bottom of chamber mirror 2 of incident illumination 1 enters filtering chamber 5, after the filtering of filtered chamber 5 is selected, enters absorbing cavity 6, through inhaling
After receiving layer, sub-wave length grating oblique reflection aperiodic mirror 4 is reached, and the reflection of a certain small angle deflection formula, under its effect, occurs
(being different from regular reflection path), again passes by absorbed layer and reaches filtering chamber top mirror 3, and reflected.In this way, behind filtered chamber
Incident illumination 1 will be reflected in absorbing cavity 6 back and forth, and absorbed layer repeatedly absorbs.
Described sub-wave length grating oblique reflection aperiodic mirror 4 is tied with the grating that cycle and dutycycle change with position
Structure, the optical length for constituting each cycle of grating is less than or is close to lambda1-wavelength.Referring to Fig. 2, Fig. 3 a～Fig. 3 c, Fig. 4, it is
The example of one-dimensional, the two-dimentional, three dimensional structure of the sub-wave length grating oblique reflection aperiodic mirror 4 in the present invention, its cycle, dutycycle,
The height of grating stick and size all press design variation with position, to reach the effect before control reflecting light, so as to realize not
Act on the oblique reflection of position certain angle；Described cycle, dutycycle, the thickness of grating stick and size are with change in location
Scheme, in addition to this example, also includes other various change programmes for realizing this function.
As shown in Fig. 2 the optical grating construction of one-dimensional sub-wave length grating aperiodic oblique reflection mirror is that bar shaped, it is adaptable to which TE/TM is inclined
Shake light.Two dimension aperiodic sub-wave length grating structure be the cycle and dutycycle concentric circular with change in location on two dimensional surface
Ring grating, and block, column or the graphic array profile grating such as poroid.Fig. 3 a～Fig. 3 c is two in the photo-detector for enumerating
Three kinds of structures of dimension sub-wave length grating aperiodic, including rectangular array grating, hexagonal array grating and donut grating, its
The grating of middle concentric ring pattern is applied to axial direction/angularly polarized light, and graphic array profile grating is to polarization insensitive.Three-dimensional
Sub-wave length grating aperiodic be each gratings strips or graphic array tile height on the basis of two-dimentional sub-wave length grating aperiodic
The grating of change.As shown in figure 4, be the grating of Level Change on the basis of two-dimentional aperiodic rectangular array grating, rectangle
Array block grating is to polarization insensitive.
Preferably, each screen periods of the sub-wave length grating aperiodic oblique reflection mirror are between 0.3 μm～1.8 μm,
Grating dutycycle is 15%～85%, and grating is highly that 0.1～1.2 μm, reflectance reaches more than 70%, realizes the reflected beams direction
Change 0.1 °～30 °.
Above-mentioned embodiment is merely to illustrate the present invention, and related technical field those of ordinary skill is in no any creativeness
In the case of work, within the spirit and scope of the present invention, the present invention is made a variety of changes and modification, belongs to the skill of equivalent
Art scheme, all in scope of the invention.Real protection category proper right of the present invention requires to limit.
Claims (6)
1. a kind of narrow line width regulatable high-performance optical detector based on sub-wave length grating aperiodic, it is characterised in that the light is visited
Survey device is three mirrors, two cavity configuration, and three mirrors refer to two groups of distribution Bragg reflector DBR and sub-wave length grating oblique reflection aperiodic
Mirror；Two chambeies refer to filter chamber and absorbing cavity；The structure of described photo-detector is respectively from bottom to top：First group of DBR, filtering chamber,
Second group of DBR, absorbing cavity and sub-wave length grating oblique reflection aperiodic mirror；
The Fabry-Perot that described first group of DBR, filtering chamber and second group of DBR are collectively formed with wavelength selection function is humorous
Shake chamber, and first group of DBR and second group of DBR respectively constitutes bottom mirror and the top mirror in filtering chamber；Described absorbing cavity is tied by photo-detector
Structure is constituted, and between filtering chamber top mirror and sub-wave length grating oblique reflection aperiodic mirror, the incident illumination in filtered chamber is carried out many
Secondary absorb repeatedly；Described sub-wave length grating oblique reflection aperiodic mirror be by high index-contrast material make with specific grating
The planar medium oblique reflection mirror of structure.
2. a kind of narrow line width regulatable high-performance optical based on sub-wave length grating aperiodic according to claim 1 is detected
Device, it is characterised in that described photo-detector structure using PIN structural, single file current-carrying minor structure, part depletion absorbing structure or
Avalanche photodiode structure.
3. a kind of narrow line width regulatable high-performance optical based on sub-wave length grating aperiodic according to claim 1 is detected
Device, it is characterised in that in the structure of described sub-wave length grating aperiodic, cycle and dutycycle change with position, constitute light
The optical length in each cycle of grid is less than or is close to lambda1-wavelength.
4. a kind of narrow line width regulatable high-performance optical based on sub-wave length grating aperiodic according to claim 1 is detected
Device, it is characterised in that described specific optical grating construction is one-dimensional, two-dimentional or three-dimensional sub-wave length grating aperiodic；One-dimensional is non-
Cycle sub-wave length grating is the cycle and dutycycle strip grating with position change in one-dimensional square；Asia ripple aperiodic of two dimension
Long grating is the cycle and dutycycle donut grating with change in location on two dimensional surface, and graphic array profile light
Grid；Three-dimensional sub-wave length grating aperiodic is each gratings strips or the figure on the basis of described two-dimentional sub-wave length grating aperiodic
The grating of shape array block Level Change.
5. a kind of narrow line width regulatable high-performance optical based on sub-wave length grating aperiodic according to claim 1 is detected
Device, it is characterised in that each screen periods of described sub-wave length grating oblique reflection aperiodic mirror between 0.3 μm～1.8 μm,
Grating dutycycle is 15%～85%, and grating is highly that 0.1～1.2 μm, reflectance reaches more than 70%, realizes the reflected beams direction
Change 0.1 °～30 °.
6. a kind of narrow line width regulatable high-performance optical based on sub-wave length grating aperiodic according to claim 1 is detected
Device, it is characterised in that described narrow linewidth is less than 2nm for spectral line width, described photo-detector tunable range is more than
10nm.
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| CN107275422A (en) * | 2017-06-22 | 2017-10-20 | 江南大学 | It is a kind of to strengthen the structure of two-dimentional transient metal sulfide light absorbs |
| CN107703624A (en) * | 2017-09-05 | 2018-02-16 | 北京邮电大学 | Resonator based on aperiodic sub-wave length grating and distribution Bragg reflector |
| CN108535801A (en) * | 2018-03-22 | 2018-09-14 | 北京邮电大学 | Optical filter |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328390A (en) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | Integrated damultiplexing light receiver and its preparing process |
| CN1399351A (en) * | 2002-08-29 | 2003-02-26 | 中国科学院上海技术物理研究所 | Quantum well IR detector with narrow-band spectral response |
| CN1979901A (en) * | 2005-12-02 | 2007-06-13 | 中国科学院半导体研究所 | Efficient adjustable optical detector with double absorbing region structure |
| CN103367370A (en) * | 2012-03-27 | 2013-10-23 | 北京邮电大学 | Sub-wavelength grating reflection enhanced silicon-based wide-spectrum integrated optical detector and preparation method thereof |
| CN105185862A (en) * | 2015-06-11 | 2015-12-23 | 北京邮电大学 | Mushroom type high speed light-detector having gathering enhancement function and manufacturing method thereof |
-
2016
- 2016-09-14 CN CN201610825756.9A patent/CN106449806A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328390A (en) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | Integrated damultiplexing light receiver and its preparing process |
| CN1399351A (en) * | 2002-08-29 | 2003-02-26 | 中国科学院上海技术物理研究所 | Quantum well IR detector with narrow-band spectral response |
| CN1979901A (en) * | 2005-12-02 | 2007-06-13 | 中国科学院半导体研究所 | Efficient adjustable optical detector with double absorbing region structure |
| CN103367370A (en) * | 2012-03-27 | 2013-10-23 | 北京邮电大学 | Sub-wavelength grating reflection enhanced silicon-based wide-spectrum integrated optical detector and preparation method thereof |
| CN105185862A (en) * | 2015-06-11 | 2015-12-23 | 北京邮电大学 | Mushroom type high speed light-detector having gathering enhancement function and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| "《光控相控阵雷达》" * |
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| CN107703624A (en) * | 2017-09-05 | 2018-02-16 | 北京邮电大学 | Resonator based on aperiodic sub-wave length grating and distribution Bragg reflector |
| JP2019068019A (en) * | 2017-10-05 | 2019-04-25 | 株式会社東芝 | Semiconductor light receiving element and method of manufacturing the same |
| CN109980029A (en) * | 2017-12-22 | 2019-07-05 | 海思光电子有限公司 | A kind of photoelectric converter and preparation method thereof |
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| CN108535801A (en) * | 2018-03-22 | 2018-09-14 | 北京邮电大学 | Optical filter |
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