CN1399351A - Quantum well IR detector with narrow-band spectral response - Google Patents
Quantum well IR detector with narrow-band spectral response Download PDFInfo
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- CN1399351A CN1399351A CN 02136721 CN02136721A CN1399351A CN 1399351 A CN1399351 A CN 1399351A CN 02136721 CN02136721 CN 02136721 CN 02136721 A CN02136721 A CN 02136721A CN 1399351 A CN1399351 A CN 1399351A
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Abstract
The quantum well IR detector with narrow-band spectral response especially suitable for long wave and ultralong wave response includes narrow-band optical filter with thin quantum well layer of several micron thickness attached to its one surface and unordered grating prepared on the thin quantum well layer. The preparation process and the working mode are also disclosed. This kind of device has the advantages of high quantum efficiency, high working temperature, lower dark current and background light current and thus high performance.
Description
Technical field
The present invention relates to Infrared Detectors, specifically be meant a kind of quantum trap infrared detector of narrow-band spectral response.
Background technology
Infrared detection technique information obtain just playing a part in the field more and more important.And the Infrared Detectors technology is a core the most in infrared detection technique, and forward focal plane technical development.At present established quantum type Infrared Detectors with very strong commercialization value, its overlayable infrared band is positioned at the 3-20 micron.The relative typical device HgCdTe photovoltaic device of long-wave band, the GaAs/AlGaAs quantum trap infrared detector with its material aspect device technology relative maturity and on long wave band, be able to fast development, and move towards commercialization.Yet aspect the thermal imaging detection, quantum trap infrared detector since its response wave band width about 1 micron, thereby at the too late HgCdTe device of thermal imaging application facet quantum trap infrared detector, and detect in the application in some gas analyses and atmosphere, often need to survey some response wave band width less than 0.1 micron device, the response wave band width (～1 micron) of quantum trap infrared detector spare seems too wide again in this class is used, meanwhile, the working temperature of the quantum trap infrared detector effective application that is also restricting it on the low side.In addition, because the active region of quantum trap infrared detector is a quantum well, its thickness is in nanometer scale, cause the final effective absorption coefficient of device little more than the HgCdTe detector, any for this reason working temperature, effective absorption coefficient and compression device response duration that can improve quantum trap infrared detector all be that Practical significance is arranged very much.
Summary of the invention
Based on some problems that above-mentioned prior art exists, the objective of the invention is to propose a kind of absorption coefficient and working temperature with the raising device, also compress the quantum trap infrared detector of the special construction of its response wave band simultaneously.
The structure of the quantum trap infrared detector of narrow-band spectral response of the present invention is seen Fig. 1, comprising: narrow band pass filter and quantum well thin layer.Narrow band pass filter is formed for evaporation multilayer low-index film and high refractive index layer by substrate with in substrate two hand-delivers.Thicknesses of layers is the bed thickness of random fluctuation, is produced by computer, and production method is seen Chinese patent 01139082.4.Backing material is conventional material of infrared window, as silicon, germanium, zinc sulphide, zinc selenide etc.Surface at narrow band pass filter is attaching the quantum well thin layer, has also prepared a unordered type grating on the quantum well thin layer.The consistent wavelength that the centre wavelength of narrow band pass filter must will be surveyed with quantum trap infrared detector.The structure of quantum well thin layer is for any one structure of utilizing intersubband transitions to cause infrared light detecting to respond, as GaAs/AlGaAs quantum well structure or InGaAs/GaAs structure.
For the purpose of convenient to device course of work discussion of the present invention, the wavelength that we will survey with detector is 15 microns, and live width is discussed for example at 0.01 micron, sees Fig. 2.When infrared incident light from narrow band pass filter incident because the effect of filter, at 15 microns, live width is injected into the quantum well thin layer at 0.01 micron light with wavelength, and the light of all the other wave bands all is reflected.After incident light enters the quantum well thin layer, again in the reflected back quantum well thin layer, because the effect of unordered type grating, quantum trap growth direction in the quantum well thin layer will be departed from the direction of propagation, thereby cause INFRARED ABSORPTION, produce photoelectric current behind unordered type grating scattering.And unabsorbed light propagates into quantum well thin layer and filter at the interface, and the incident direction that incide the light on filter surface this moment departs from the normal incidence direction, and the central homology wavelength of filter will be offset, as shown in Figure 3.The incident light that corresponding central homology wavelength is 15 microns descends rapidly with the increase transmitance of incident angle.As seen from Figure 4, when increasing to 3 transmitances when spending, angle drops to below 1/3.When incident light is spent greater than 3 in its angle deviating normal incidence, just almost no longer can see through filter, but form total reflection at the interface at quantum well thin layer and filter, returning the quantum well thin layer is absorbed once more, when the light that returns reaches the unordered type grating of quantum well thin layer surface once more, it will continue to be dispersed into a direction of propagation of departing from the normal incidence angle, and this point is different from periodically grating.Because in the periodicity grating, after the light after the quilt scattering for the first time turns back to the scattering once again of grating place once more, will come back to the normal incidence direction.And will constantly be turned back between the unordered type grating of quantum well thin layer upper surface and filter and these two faces of quantum well thin layer interface by the light of the continuous scattering of unordered type grating, thereby constitute the fully absorption of incident infrared light in the quantum well thin layer, improved the quantum efficiency of quantum trap infrared detector widely.
Device architecture advantage of the present invention is:
1. can improve the quantum efficiency of quantum trap infrared detector effectively, the quantum efficiency of the quantum trap infrared detector of long wave and very long wave particularly, because for long wave and very long wave device, response wave length is longer, then in identical quantum well under the doping content condition, dark current is bigger, thereby working temperature must be lower, in order to reduce dark current and to improve working temperature, an effective method is the doping content in reducing quantum well, but this method greatly reduces the absorption coefficient of device simultaneously, thereby quantum efficiency is descended greatly.And the device architecture that adopts this patent to propose, because infrared light is repeatedly absorbed, thereby the sensitiveness of doping content is suppressed effectively in the quantum efficiency relative quantum trap of device, reach quantum efficiency and descended and realize the purpose that dark current descends significantly under the few condition, thereby reached the purpose that improves detectivity and working temperature.
2. owing to quantum well detector in the device architecture integrates with narrow band pass filter, so this device will be a kind of Infrared Detectors of narrowband response, at long wave particularly in the very long wave device application, can reduce the bias light electric current widely, thereby in the coupling that in focal plane device development, helps with reading circuit
Reduction is to the excessive requirement of integrating capacitor value of reading circuit.
3. owing to be scattered into the infrared light of smaller angle, also will be limited in the quantum well thin layer, so the grating of device is prepared requirement will be reduced widely, the light that major part is scattered will all can be absorbed by quantum well layer, will leave the quantum well thin layer and will lose thereby be different from traditional structure when being scattered the angle time less than normal.
Description of drawings
Fig. 1 is the structural representation of quantum trap infrared detector;
Fig. 2 is the fundamental diagram of quantum trap infrared detector;
Fig. 3 is the variation of the central homology wavelength of filter with incidence angle;
Fig. 4 is the variation of the centre wavelength incident light transmitance of filter with incidence angle;
Fig. 5 is the structural representation of quantum well thin layer.
Embodiment
Be 15 microns to survey wavelength below, live width is an example at the GaAs/AlGaAs of 0.01 micron narrow-band spectral response quantum trap infrared detector, and the specific embodiment of the present invention is described in detail, and concrete structure is seen Fig. 1.It comprises narrow band pass filter 1 and quantum well thin layer 2, also has a unordered type grating 3 on quantum well thin layer 2.
1. the preparation of narrow band pass filter 1
According to the detection requirement of detector, narrow band pass filter is substrate with silicon, and centre wavelength is 15 microns, and live width is at 0.01 micron, and the film structure that its substrate is two adopts the method design of Chinese patent 01139082.4, and concrete parameter sees Table 1.The evaporation of film system adopts conventional thermal evaporation plated film means to realize.
2.GaAs/AlGaAs the preparation of quantum well thin layer 2
See Fig. 5, adopt the growth successively on GaAs substrate 4 of molecular beam epitaxy or metal-organic chemical vapour deposition method:
The aluminium component is greater than 0.5 Al
xGa
1-xAs layer 201, tool thickness be greater than 600 nanometers, the sacrifice layer when preparing as device;
Mixing silicon concentration is 1 * 10
18Cm
-3GaAs lower electrode layer 202;
The Al in 50 cycles of alternating growth
0.14Ga
0.86As barrier layer 203, its thickness are that 60 nanometers are 1 * 10 with mixing silicon concentration
17Cm
-3GaAs potential well layer 204, its thickness are 7 nanometers;
Al
0.14Ga
0.86As barrier layer 203, its thickness are 60 nanometers;
Mixing silicon concentration is 1 * 10
18Cm
-3GaAs upper electrode layer 205.
3. narrow band pass filter 1 and GaAs/AlGaAs quantum well thin layer 2 are become one
The quantum well thin layer 2 of the band GaAs substrate 4 that growth is good cuts into size at 1mm
2～100mm
2Small pieces, use traditional stripping means then, it is immersed in the corrosive liquid, corrosive liquid is by optionally corroding Al
xGa
1-xJust the quantum well thin layer and the GaAs substrate 4 of being grown is separated from each other out behind the As layer 201, obtained quantum well thin layer 2.Then quantum well thin layer 2 is swum on the water surface of deionized water, to in the narrow band pass filter 1 immersion water quantum well thin layer 2 be attached on narrow band pass filter 1 surface, and lower electrode layer 202 is contacted with narrow band pass filter 1 surface, then natural airing, narrow band pass filter 1 He like this
GaAs/
AlGaAsQuantum well thin layer 2 becomes one.
Again narrow band pass filter 1 and GaAs/AlGaAs quantum well thin layer 2 conglomerates further are prepared into the fine external detector of quantum well, on upper electrode layer 205, be prepared into earlier unordered type grating 3 as shown in Figure 1, remove part barrier layer 203 and potential well layer 204 with post-etching, make lower electrode layer 202 expose out, on exposed 202 layers and remaining 205 layers, do the electrode of ohmic contact type, the lead-in wire of burn-oning then, the GaAs/AlGaAs quantum trap infrared detector preparation of narrow-band spectral response finishes.
The film structure of table 1 narrow band pass filter
| Material | Refractive index | Thickness (nanometer) |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??5770.55502 |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??3882.43416 |
| ????PbF2 | ????1.75 | ??550.31?535 |
| ????PbTe | ????5.6 | ??2271.96871 |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??645.41925 |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??2096.9309 |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??94.071 |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??1397.17782 |
| ????PbF2 | ????1.75 | ??550.31535 |
| ????PbTe | ????5.6 | ??2084.30569 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????956.33078 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????4401.29351 |
| ????CdTe | ????2.66 | ????4935.51396 |
| ????PbTe | ????5.6 | ????535.9621 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????5604.66005 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????5628.02259 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????640.99167 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????4007.39338 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????3351.02892 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????5440.78478 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????2752.4372 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????942.51421 |
| ????PbF2 | ????1.75 | ????550.31535 |
| ????PbTe | ????5.6 | ????831.00813 |
| ????PbF2 | ????1.75 | ????550.31535 |
Claims (2)
1. the quantum trap infrared detector of a narrow-band spectral response, comprise: narrow band pass filter (1) and quantum well thin layer (2), narrow band pass filter is formed for evaporation multilayer low-index film and high refractive index layer by substrate with in substrate two hand-delivers, thicknesses of layers is the bed thickness of random fluctuation, produce by computer, backing material is conventional material of infrared window, as silicon, germanium, zinc sulphide, zinc selenide etc.; It is characterized in that:
A. attaching quantum well thin layer (2) on a surface of narrow band pass filter (1), also preparation has a unordered type grating (3) on quantum well thin layer (2);
B. the wavelength one that must will survey with quantum trap infrared detector of the centre wavelength of narrow band pass filter to.
2. according to the quantum trap infrared detector of claim 1 narrow-band spectral response, it is characterized in that: the structure of said quantum well thin layer (2) is for any one structure of utilizing intersubband transitions to cause infrared light detecting to respond, as GaAs/AlGaAs quantum well structure or InGaAs/GaAs structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021367213A CN1187841C (en) | 2002-08-29 | 2002-08-29 | Quantum well IR detector with narrow-band spectral response |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021367213A CN1187841C (en) | 2002-08-29 | 2002-08-29 | Quantum well IR detector with narrow-band spectral response |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1399351A true CN1399351A (en) | 2003-02-26 |
| CN1187841C CN1187841C (en) | 2005-02-02 |
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ID=4748749
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021367213A Expired - Fee Related CN1187841C (en) | 2002-08-29 | 2002-08-29 | Quantum well IR detector with narrow-band spectral response |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297837C (en) * | 2004-06-22 | 2007-01-31 | 中国科学院上海技术物理研究所 | Narrow-band pass filter type Terahertz quantum well coherent optical source chip |
| CN100464433C (en) * | 2007-06-29 | 2009-02-25 | 中国电子科技集团公司第十三研究所 | A crossed combined dual cycle grating for quanta trap infrared detector |
| CN101571886B (en) * | 2009-06-12 | 2011-05-11 | 哈尔滨工业大学 | Simulation design method for material structure of quantum well infrared photodetector |
| CN103460403A (en) * | 2011-02-28 | 2013-12-18 | 佛罗里达大学研究基金会有限公司 | Infrared pass visible blocker for upconversion devices |
| CN105699418A (en) * | 2016-02-25 | 2016-06-22 | 东华大学 | Determination device for thermal conductivity of flexible thin film material |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
-
2002
- 2002-08-29 CN CNB021367213A patent/CN1187841C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297837C (en) * | 2004-06-22 | 2007-01-31 | 中国科学院上海技术物理研究所 | Narrow-band pass filter type Terahertz quantum well coherent optical source chip |
| CN100464433C (en) * | 2007-06-29 | 2009-02-25 | 中国电子科技集团公司第十三研究所 | A crossed combined dual cycle grating for quanta trap infrared detector |
| CN101571886B (en) * | 2009-06-12 | 2011-05-11 | 哈尔滨工业大学 | Simulation design method for material structure of quantum well infrared photodetector |
| CN103460403A (en) * | 2011-02-28 | 2013-12-18 | 佛罗里达大学研究基金会有限公司 | Infrared pass visible blocker for upconversion devices |
| CN105699418A (en) * | 2016-02-25 | 2016-06-22 | 东华大学 | Determination device for thermal conductivity of flexible thin film material |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1187841C (en) | 2005-02-02 |
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