CN1328390A - Integrated damultiplexing light receiver and its preparing process - Google Patents
Integrated damultiplexing light receiver and its preparing process Download PDFInfo
- Publication number
- CN1328390A CN1328390A CN 01120077 CN01120077A CN1328390A CN 1328390 A CN1328390 A CN 1328390A CN 01120077 CN01120077 CN 01120077 CN 01120077 A CN01120077 A CN 01120077A CN 1328390 A CN1328390 A CN 1328390A
- Authority
- CN
- China
- Prior art keywords
- integrated
- damultiplexing
- light receiver
- wedge structure
- guide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
An integrated demultiplexing light receiver with non-parallel cavity structure is prepared through generating the leading layer and mask layer on the surface of epitaxial layer where a wedge structure is needle to form, removing mask layer at the top of the wedge structure to be formed, and etching in corroding liquid to form a wedge structure.
Description
Technical field:
The present invention relates to a kind of opto-electronic device, integrated damultiplexing light receiver and preparation method that particularly a kind of integrated semiconductor light wave with unparallel cavity structure and opto-electronic device form.
Technical background:
Present various semiconductor photoelectronic devices such as photodetector and semiconductor laser etc., its structural one big characteristics are exactly to belong to hierarchy on the direction perpendicular to its substrate, and (and being parallel to substrate surface) normally parallel to each other between each layer structure, this is determined by its growth technique condition.This structure has all been followed in the development of semiconductor device for many years.In recent years, because the needs of new application, in semiconductor waveguide structured light electronic device (light wave direct of travel wherein is parallel to substrate plane), this structure some improvement have been made, as Distributed Feedback Laser is exactly to erode away optical grating construction in a certain certain layer of device hierarchy, but in the semiconductor photoelectronic device (wherein the light wave direct of travel is perpendicular to substrate plane) of vertical cavity structure, this design feature does not but change all the time, (this kind technology is that the available spectrum with optical communication is divided into one by one the independently wavelength channel of non-overlapping copies to the optical wavelength-division multiplex communication technology in recent years, for example the spectrum with near the 30nm width the 1550nm is divided into 1534.25nm, 1535.04nm, 1560.61nm Deng 32 wavelength channels) the performance that develops rapidly semiconductor photoelectronic device new requirement has been proposed, for example for the optical semiconductor detector, it not only requires this type of device to have high responsiveness, high response speed, and require this type of device to have thin sharp wavelength selection function, receive from a plurality of wavelength channels of wavelength division multiplexing, to select required wavelength channel.For example from above-mentioned 32 wavelength channels, select the wavelength channel that is positioned at 1560.61nm, and the signal of other wavelength channel of filtering is to prevent the interference between each channel signal, this just requires the centre wavelength of the response spectrum of photo-detector to be positioned at 1 560.61nm place, and its half-peak value spectral width is less than 1nm.Present semiconductor photoelectronic device structure still can't satisfy above-mentioned many-sided requirement simultaneously.
Summary of the invention:
In view of this, how to improve the structure of semiconductor photoelectronic device, make it have unprecedented superperformance, has cheap cost simultaneously, to satisfy the requirement of growing optical wavelength-division multiplex communication and other various photoelectron technology application development, this is the motivation place that the present invention grinds wound.
Designer of the present invention does brand-new design and constitutes by means of being engaged in the practical experience that all kinds of electronics and semiconductor technology are researched and produced processing and other fields for many years on the basis of feasibility study repeatedly, get generation of the present invention eventually.
The purpose of this invention is to provide a class and have the semiconductor light wave of unparallel cavity structure and the integrated damultiplexing light receiver that opto-electronic device forms, can artificially control the wedge structure that forms a specific angle between the specific adjacent interfaces in its interior laminate layer structure, make device on some important performance, be broken through, to satisfy the above-mentioned application need that increases day by day.
Another object of the present invention is to provide a kind of method for preparing wedge structure on semiconductor epitaxial layers, this wedge structure can be in arbitrary region on the epitaxial loayer, preparing wedge structure and have specific inclination angle, have an even surface, is to realize having the integrated semiconductor light wave of unparallel cavity structure and the key of opto-electronic device.
Purpose of the present invention can realize by following mode, a kind of integrated damultiplexing light receiver preparation method, it is characterized in that forming guide layer and mask layer in epi-layer surface, mask layer is removed in position on the wedge structure top that needs form, place corrosive liquid then, the corrosion rate of guide layer is very fast, and guide layer is in sideetching, expose the slower epitaxial loayer of adjacent corrosion rate gradually, on adjacent epitaxial loayer, just erode away wedge structure like this.During the guide layer thinner thickness, the inclination angle [theta] of the wedge structure that erodes away is by the corrosion rate ratio decision of guide layer and epitaxial loayer.
Corrosive liquid of the present invention is selected citric acid/H for use
2O
2, NH
4OH/H
2O
2, NH
4F/HF or HF/CrO
3Corrosive liquid; The preferred HF/CrO of the present invention
3Corrosive liquid, guide layer can also can form by modes such as evaporation, sputter and coatings in epitaxial growth formation.On the epitaxial loayer that has prepared wedge structure, can pass through other structures of method continued growth such as evaporation, extension.
The purpose of the relevant device architecture of the present invention can realize by following mode, a kind of integrated damultiplexing light receiver, it is characterized in that having wedge structure in semiconductor light wave and the opto-electronic device, wedge structure can have a plurality of, the angle theta angle that wedge structure forms the chamber has 0 °＜θ＜90 °, the material of the epitaxial loayer of wedge structure is and the material lattice coupling or the unmatched semi-conducting material of substrate that the material of the epitaxial loayer of wedge structure can be a non-single-crystal material.
The present invention is that to utilize corrosive liquid be that selective corrosion realizes wedge structure to the corrosion rate difference of different materials, have technology simple, be easy to advantage such as realization, simultaneously can recently obtain the wedge structure of various different angle to the corrosion rate of guide layer and epitaxial loayer, and wedge structure can be realized the optional position on epitaxial loayer by regulating corrosive liquid.
Further illustrate the embodiment of the invention below in conjunction with accompanying drawing.
Description of drawings:
Fig. 1 is the structural representation the present invention prepares wedge structure on the semiconductor device epitaxial loayer before.
Fig. 2 is the structural representation of the present invention behind preparation wedge structure on the semiconductor device epitaxial loayer.
Fig. 3 is a structure chart of the present invention.
1... mask layer 2...... guide layer 3...... epitaxial loayer 4...... wedge cavities
5...... top mirror 6...... top electrode 7...... absorbed layer 8...... bottom electrode
9...... the parallel chamber of mirror 11...... 12...... substrate at the bottom of the middle mirror 10......
Specific implementation:
Semiconductor photoelectronic device has that sandwich construction is folded to be established, referring to Fig. 1 and 2, a mask layer 1 is removed in position on the wedge structure top that needs form, place corrosive liquid then, the corrosion rate of guide layer 2 is very fast, guide layer corrodes to two side direction from the part of removing surperficial mask layer, exposes the slower epitaxial loayer of adjacent corrosion rate 3 gradually, from outward appearance to inner essence just erodes away the shape of wedge structure like this on adjacent epitaxial loayer 3 along with exposing gradually.The inclination angle of inclined plane θ that erodes away is by the corrosion rate ratio decision of guide layer 2 and epitaxial loayer 3, and the corrosion rate of controlling the two is than just controlling inclination angle of inclined plane.Guide layer 2 and epitaxial loayer 3 are that epitaxial growth forms on GaAs substrate 12 in the present embodiment, all are the AlGaAs material, but guide layer 2 is different with A1 component in the epitaxial loayer 3, so the corrosion rate of guide layer is higher than the corrosion rate of epitaxial loayer.The corrosive liquid that present embodiment is selected for use is citric acid/H
2O
2, NH
4OH/H
2O
2, NH
4F/HF or HF/CrO
3Corrosive liquid; The preferred HF/CrO of the present invention
3Corrosive liquid.
Have three high reflection mirrors referring to Fig. 3 embodiment of the invention device, top mirror 5, middle mirror 9 and end mirror 10.The angle that one angle θ is arranged between top mirror 5 and the middle mirror 9, they have constituted a wedge cavities 4, and thin absorbed layer 7 is arranged in wedge cavities 4.In mirror 9 parallel to each other with end mirror 10, they have constituted parallel Fabry one Paro (the light filtering chamber 11 of F-P).
Parallel sandwich construction can form by technology such as epitaxial growth, evaporation, sputter or coatings, and the above hierarchy of wedge structure still can form by technology such as epitaxial growth, evaporation, sputter or coatings, to realize various photoelectric properties.
Through the light wave of substrate 12 perpendicular to incident parallel chamber 11 filtering after, form narrow spectrum light wave with specific centre wavelength.This narrow spectrum light wave arrives top mirror 5 after absorbed layer once absorbs, and by its reflection; This reflecting light is again after the absorbed layer secondary absorbs, get back to the upper surface in the F-P light filtering chamber in the device architecture again, because this moment, the normal in incident light and F-P light filtering chamber was not parallel and have an angle theta, as long as suitable selection θ, to be equal to a high reflective mirror for incident light F-P light filtering chamber this moment, thereby repeatedly come back reflective in non-flat an actor's rendering of an operatic tune that this narrow spectrum light wave will constitute at the upper surface and the top mirror of F-P chamber optical filter at this moment, and repeatedly be absorbed by the absorption layer, as long as the number of times of reflection is abundant, device just can obtain high responsiveness.Simultaneously because the absorbed layer of device is thinner, the electronics of generation can very fast effusion, changes into photoelectric current.Thereby the response time of device is reduced, that is to say that device can obtain high response speed.In addition, the suitable angle theta of selecting, the parameter designing that has guaranteed F-P chamber optical filter can be independent of the design of the residing absorbing cavity of absorbed layer and carry out, thereby the fineness of this filter can be done very highly, thereby make device only respond, thereby also just make device have thin sharp wavelength selective power the light wave in a certain specific extremely narrow spectral region.This new device has satisfied the requirement of the current optical wavelength-division multiplex communication technology to the semiconductor light-detecting device.
Science and technology development historys teaches that the introducing of a basic new construction often can bring the variation and the leap of matter on device and the systematic function.A kind of new basic structure that integrated non-parallel cavity semiconductor light wave proposed by the invention and optoelectronic device structure will become semiconductor device, it acts on just as electric capacity and inductance in the grating in the optical element and prism structure or the Circuits System.Novel semi-conductor photo-detector recited above is one of its practical application.Therefore, the present invention will definitely produce important and remote influence to the development of light wave and opto-electronic device from now on.
In sum, the present invention makes the present invention can solve the indeterminable problem of many existing opto-electronic devices by simple structural design, and provides a class new device for from now on opto-electronic device and in Application for Field such as optical wavelength-division multiplex communications.The above is instantiation of the present invention and the know-why used, according to the equivalent transformation that conception of the present invention is done, and when the function that it produced does not exceed spiritual that specification and accompanying drawing contain yet, all should be within the scope of the invention, explanation hereby.
Claims (8)
1, a kind of integrated damultiplexing light receiver preparation method, it is characterized in that forming guide layer and mask layer in epi-layer surface, the guide layer apical position of the wedge structure that forms at needs is removed mask layer, place corrosive liquid then, the corrosion rate of guide layer is very fast, guide layer exposes the slower epitaxial loayer of adjacent corrosion rate gradually in sideetching, just erode away wedge structure on adjacent epitaxial loayer.
2, a kind of integrated damultiplexing light receiver is characterized in that having wedge structure in semiconductor light wave and the opto-electronic device.
3, integrated damultiplexing light receiver preparation method according to claim 1 is characterized in that corrosive liquid selects citric acid/H for use
2O
2, NH
4OH/H
2O
2, NH
4F/HF or HF/CrO
3Corrosive liquid.
4, integrated damultiplexing light receiver preparation method according to claim 3 is characterized in that preferred HF/CrO
3Corrosive liquid.
5, integrated damultiplexing light receiver according to claim 2 is characterized in that having in semiconductor light wave and the opto-electronic device angle theta angle that wedge structure forms the chamber and has 0 °＜θ＜90 °.
6, integrated damultiplexing light receiver according to claim 2, the material that it is characterized in that the epitaxial loayer of wedge structure are to mate or unmatched semi-conducting material with the material lattice of substrate.
7, integrated damultiplexing light receiver according to claim 2, the material that it is characterized in that the epitaxial loayer of wedge structure is a non-single-crystal material.
8, integrated damultiplexing light receiver preparation method according to claim 1 is characterized in that guide layer is to form or form by evaporation, sputter and application pattern by epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011200774A CN1140972C (en) | 2001-07-11 | 2001-07-11 | Integrated damultiplexing light receiver and its preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011200774A CN1140972C (en) | 2001-07-11 | 2001-07-11 | Integrated damultiplexing light receiver and its preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1328390A true CN1328390A (en) | 2001-12-26 |
| CN1140972C CN1140972C (en) | 2004-03-03 |
Family
ID=4663884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011200774A Expired - Fee Related CN1140972C (en) | 2001-07-11 | 2001-07-11 | Integrated damultiplexing light receiver and its preparing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1140972C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388575C (en) * | 2003-03-17 | 2008-05-14 | 北京邮电大学 | Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
-
2001
- 2001-07-11 CN CNB011200774A patent/CN1140972C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388575C (en) * | 2003-03-17 | 2008-05-14 | 北京邮电大学 | Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1140972C (en) | 2004-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5116461A (en) | Method for fabricating an angled diffraction grating | |
| US7194174B2 (en) | Integrated photonic crystal structure and method of producing same | |
| CN108508506A (en) | Surpass the wave plate on surface based on medium and double-function device that optical device is combined | |
| WO2002016982A1 (en) | Dual-side waveguide-based wavelength demultiplexer | |
| US5818983A (en) | Optical integrated circuit, optical circuit waveguide device and process for oriented, selective growth and formation of organic film | |
| US7352932B1 (en) | Guided-mode resonance filter and fabrication method of same | |
| CN111045121B (en) | Polarization-controlled surface plasmon dual-function super surface and design and preparation method thereof | |
| CN105738990B (en) | A kind of phasmon waveguide filter of strong transmissison characteristic | |
| US6466708B2 (en) | Optical module and manufacturing method thereof | |
| WO2004097464A2 (en) | Multiple-core planar optical waveguides and methods of fabrication and use thereof | |
| US20100172615A1 (en) | Coupling Device with Compensated Birefringence | |
| US7145722B2 (en) | Optical filter and method of manufacturing thereof | |
| CA2367047A1 (en) | Optical planar waveguide device and method of fabrication | |
| CN114265130A (en) | Transflective light regulation device based on all-dielectric super-surface and working method thereof | |
| US6904200B2 (en) | Multidimensional optical gratings | |
| CN1140972C (en) | Integrated damultiplexing light receiver and its preparing process | |
| US6031951A (en) | Transmission-mode optical coupling mechanism and method of manufacturing the same | |
| KR101510358B1 (en) | Broadband optical beam splitters | |
| CN1818798A (en) | Method and device for producing photon crystal mask layer on LED | |
| CN2492960Y (en) | Integrated demultiplex light-receiving device | |
| JP3766844B2 (en) | Lattice modulation photonic crystal | |
| CN1549938A (en) | Integrated transparent substrate and diffractive optical element | |
| CN1118877C (en) | Lightwave and photoelectronic semiconductor devices with non-parallel cavities structure and method for carrying out same | |
| CN2381043Y (en) | Semiconductor lightwave and photoelectronic device with non-parallel cavity structure | |
| WO2004095662A2 (en) | Bandgap engineering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040303 Termination date: 20130711 |