CN109980038A - A kind of preparation method of photodetector and photodetector - Google Patents
A kind of preparation method of photodetector and photodetector Download PDFInfo
- Publication number
- CN109980038A CN109980038A CN201711446656.6A CN201711446656A CN109980038A CN 109980038 A CN109980038 A CN 109980038A CN 201711446656 A CN201711446656 A CN 201711446656A CN 109980038 A CN109980038 A CN 109980038A
- Authority
- CN
- China
- Prior art keywords
- layer
- photodetector
- absorbed layer
- lower contact
- contact electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- 239000011248 coating agent Substances 0.000 claims abstract description 46
- 238000000576 coating method Methods 0.000 claims abstract description 46
- 150000002739 metals Chemical class 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 71
- 230000007704 transition Effects 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 28
- 238000001259 photo etching Methods 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 239000007792 gaseous phase Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000010355 oscillation Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 17
- 238000013461 design Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 12
- 230000005622 photoelectricity Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 241001672694 Citrus reticulata Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
This application discloses a kind of photodetectors, including absorbed layer, metal layer, deielectric-coating and the reflective metals being arranged successively from bottom to top layer；Absorbed layer is for absorbing target acquisition light；Metal layer includes strip grating and upper contact electrode, and the side of strip grating is located on absorbed layer, and strip grating is for assembling target acquisition light, and upper contact electrode by voltage and lower contact electrode for being electrically connected；The side of deielectric-coating is located on the other side of strip grating, and the other side of deielectric-coating is located under reflective metals, and deielectric-coating detects light for reflectance target for providing the cavity of resonant cavity, reflective metals.Present invention also provides a kind of preparation methods of photodetector.Transverse resonance chamber effect and longitudinal Resonant cavity oscillation Effect can be formed simultaneously using strip grating and reflective metals in the application, higher absorptivity is obtained with relatively thin uptake zone, and the structure of detector is more simple for resonator cavity resonance detector, reduces the production cost.
Description
Technical field
This application involves field of semiconductor devices more particularly to the preparation sides of a kind of photodetector and photodetector
Method.
Background technique
In the development of optical fiber telecommunications system, photodetector is as an an indispensable part, the superiority and inferiority of performance
Decisive role is played to the performance of entire optical fiber telecommunications system.The bandwidth of photodetector is mutually restricted with quantum efficiency, and one
As in the case of by increasing the absorber thickness of photodetector can increase the quantum efficiency of device.
Currently, a kind of common photodetector is as indicated with 1, Fig. 1 is that resonant cavity enhances (resonant in existing scheme
Cavity enhanced, RCE) detector a schematic diagram, RCE detector is integrated with distributed cloth at the both ends of uptake zone
The resonant cavity of glug reflecting mirror (distributed Bragg reflection, DBR).When light is incident on RCE detection from one end
After device, light can between two DBR roundtrip, until be absorbed area absorption.
Although the light absorption area of RCE panel detector structure shown in Fig. 1 than relatively thin, is conducive to carrier fast transferring to electrode,
But the extension of the RCE panel detector structure needs very thick DBR, and the thickness of usually DBR can be to a few micrometers, to increase
Cost of manufacture.
Summary of the invention
This application provides the preparation methods of a kind of photodetector and photodetector, on the one hand using strip grating and
Reflective metals can be formed simultaneously transverse resonance chamber effect and longitudinal Resonant cavity oscillation Effect, obtain higher light with relatively thin uptake zone and inhale
Yield, on the other hand, the structure of the detector made for resonator cavity resonance detector it is more simple, to reduce
Cost of manufacture.
The first aspect of the embodiment of the present application provides a kind of photodetector, the photodetector from from bottom to top layer according to
Absorbed layer, metal layer, deielectric-coating and the reflective metals of secondary arrangement, absorbed layer is for absorbing target acquisition light, and metal layer packet
The side of grating containing strip and upper contact electrode, the strip grating is located on absorbed layer, and strip grating is for that can assemble
Target acquisition light, contact electrode by voltage and lower contact electrode for being electrically connected on this.And the side position of deielectric-coating
On the other side of strip grating, the other side of deielectric-coating is located under reflective metals, and deielectric-coating is for providing resonant cavity
Cavity, reflective metals detect light for reflectance target.
In the embodiment of the present application, provide a kind of photodetector, including be arranged successively from bottom to top layer absorbed layer,
Metal layer, deielectric-coating and reflective metals, absorbed layer for absorbing target acquisition light, metal layer include strip grating and on connect
The side of touched electrode, strip grating is located on absorbed layer, and strip grating is for assembling target acquisition light, and upper contact electrode is used
It is electrically connected in by voltage and lower contact electrode, the side of deielectric-coating is located on the other side of strip grating, medium
The other side of film couples and reflective metals, and deielectric-coating is detected for providing the cavity of resonant cavity, reflective metals for reflectance target
Light.Using above-mentioned photodetector, on the one hand the structure of the photodetector is more simple, to reduce the production cost, separately
On the one hand it can be formed simultaneously transverse resonance chamber effect and longitudinal Resonant cavity oscillation Effect using strip grating and reflective metals, is obtained with this
Higher absorptivity.
In a kind of possible design, in the first implementation of the first aspect of the embodiment of the present application, photoelectricity is visited
Surveying device can also include transition zone, and transition zone is located under absorbed layer, and transition zone is N-type gallium arsenide phosphide indium transition layer.Due to N-type
Positive charge amount is equal with negative charge amount in transition zone, therefore N-type transition zone is in electroneutral.Free electron is mainly mentioned by foreign atom
For hole is formed by thermal excitation.The impurity of incorporation is more, and the concentration of free electron is higher, and electric conductivity is stronger.
As it can be seen that the Nomenclature Composition and Structure of Complexes of transition zone is described in the embodiment of the present application, to be conducive to the feasible of enhanced scheme
Property.
In a kind of possible design, in second of implementation of the first aspect of the embodiment of the present application, photoelectricity is visited
Surveying device can also include lower contact layer, which be located under transition zone, and the lower contact layer is heavily doped for N-type or p-type
Miscellaneous contact layer.Heavy doping refers to that the impurity level in incorporation semiconductor material is relatively more, it is generally the case that the impurity quality of addition
The more, the electric conductivity of semiconductor material is stronger.
As it can be seen that the conduction of lower contact layer can be increased using the heavy doping contact layer of N-type or p-type in the embodiment of the present application
Property.
In a kind of possible design, in the third implementation of the first aspect of the embodiment of the present application, photoelectricity is visited
Surveying device can also include lower contact electrode, wherein lower contact electrode is located on lower contact layer, and lower contact electrode and metal layer
Between be not present overlapping part.
As it can be seen that lower contact electrode will not shelter target detect light, the reliability of photodetector is promoted with this.
In a kind of possible design, in the 4th kind of implementation of the first aspect of the embodiment of the present application, photoelectricity is visited
Surveying device can also include N-type substrate, wherein N-type substrate is located under transition zone.
As it can be seen that N-type substrate is located at the bottom of photodetector, play a part of supporting and fixing.
In a kind of possible design, in the 5th kind of implementation of the first aspect of the embodiment of the present application, photoelectricity is visited
Surveying device can also include lower contact electrode, wherein lower contact electrode is located under N-type substrate, and lower contact electrode and metal layer
Between be not present overlapping part.
As it can be seen that lower contact electrode will not shelter target detect light, the reliability of photodetector is promoted with this.
In a kind of possible design, in the 6th kind of implementation of the first aspect of the embodiment of the present application, photoelectricity is visited
Surveying device can also include buffer layer, which is located under absorbed layer, and the buffer layer is located on N-type substrate, N-type substrate
For InP substrate, buffer layer with a thickness of 500 ± 400 nanometers of nm.
As it can be seen that the thickness of buffer layer is smaller, to reduce the thickness of photodetector.
In a kind of possible design, in the 7th kind of implementation of the first aspect of the embodiment of the present application, absorbed layer
Including the first sub- absorbed layer and the second sub- absorbed layer, wherein the first sub- absorbed layer is undoped absorbed layer, the first sub- absorbed layer
With a thickness of 500 ± 300nm, the second sub- absorbed layer is p-type or N-type absorbed layer, the second sub- absorbed layer with a thickness of 50nm ±
30nm。
As it can be seen that the thickness of the first sub- absorbed layer and the second sub- absorbed layer is all smaller, to reduce the thickness of photodetector
Degree.
The second aspect of the embodiment of the present application provides a kind of preparation method of photodetector, firstly, in N-type substrate substrate
On successively epitaxial buffer layer, transition zone and absorbed layer, and epitaxial wafer is made, wherein N-type substrate is indium phosphide InP substrate, is inhaled
Receipts layer is heavy doping absorbed layer.Then the photoetching process that standard is used in extension on piece makes the square that side length is 50um by lithography
Or circular table top carries out sense coupling etching or wet etching then under the exposure mask of photoresist, protects
Mesa region is stayed, and remaining region is eroded into lower contact layer or N-type substrate, wherein remaining region is that epitaxial wafer removes platform
Remaining region behind face.Image corresponding to metal layer is removed using stripping technology again, to obtain metal layer, metal layer
Including strip grating and upper contact electrode, strip grating and upper contact electrode are to obtain after being deposited by electron beam evaporation
's.Finally, using chemical vapor deposition method precipitation medium film, and the deposition of reflective metal on deielectric-coating on the metal layer.
In the embodiment of the present application, a kind of preparation method of photodetector is provided, due to the structure letter of photodetector
It is single, it is therefore, also more simple in technique production.
In a kind of possible design, in the first implementation of the second aspect of the embodiment of the present application, in medium
It can also include rotten using photoetching process, sense coupling technique and wet process on film after deposition of reflective metal
At least one of etching technique technique removes deielectric-coating and reflective metals corresponding to non-stripe grating region.
As it can be seen that in the embodiment of the present application, it is also necessary to further deielectric-coating corresponding to removal non-stripe grating region and anti-
Radioglold category, to prevent deielectric-coating and reflective metals from promoting the absorption efficiency of incident light to the influence of non-stripe grating region.
In a kind of possible design, in second of implementation of the second aspect of the embodiment of the present application, using light
The step of carving technology acquisition table top, can specifically include:
Table top is carved from epitaxial wafer using photoetching process first, then under the exposure mask of photoresist, using inductively
Remaining region is eroded to lower contact layer by plasma etch process or wet corrosion technique, wherein remaining region is extension
Piece removes remaining region after table top.
As it can be seen that how being described using photoetching process acquisition table top, and remaining region is eroded in the embodiment of the present application
Lower contact layer, by the above-mentioned means, can guarantee the operability of acquisition table top.
It, can be in the third implementation of the second aspect of the embodiment of the present application in a kind of possible design
Electrode is contacted under being made on lower contact layer of photoetching process.
As it can be seen that electrode is contacted under can making on lower contact layer in the embodiment of the present application, to promote lower contact electrode
The flexibility of design.
In a kind of possible design, in the 4th kind of implementation of the second aspect of the embodiment of the present application, using light
The step of carving technology acquisition table top, can specifically include:
The table top for carving 50 ± 5 microns of um from epitaxial wafer using photoetching process first, then under the exposure mask of photoresist,
Remaining region is eroded to by N-type substrate using sense coupling technique or wet corrosion technique, wherein remaining
Region is that epitaxial wafer removes remaining region after table top.
As it can be seen that how being described using photoetching process acquisition table top, and remaining region is eroded in the embodiment of the present application
N-type substrate, by the above-mentioned means, can guarantee the operability of acquisition table top.
It, can be in the 5th kind of implementation of the second aspect of the embodiment of the present application in a kind of possible design
Electrode is contacted under being made in N-type substrate of photoetching process.
As it can be seen that electrode is contacted under can making in N-type substrate in the embodiment of the present application, to promote lower contact electrode
The flexibility of design.
In a kind of possible design, in the 6th kind of implementation of the second aspect of the embodiment of the present application, served as a contrast in N-type
Successively epitaxial buffer layer, transition zone and absorbed layer in bottom substrate, and epitaxial wafer is made, it can specifically include the following two kinds side
Formula:
First way is, using metallo-organic compound chemical gaseous phase deposition technology or molecular beam epitaxy technique, in N
Epitaxial buffer layer, lower contact layer, transition zone and absorbed layer according to this on type substrate, and epitaxial wafer is made.The second way is to adopt
With metallo-organic compound chemical gaseous phase deposition technology or molecular beam epitaxy technique, in N-type substrate according to this epitaxial buffer layer,
Transition zone and absorbed layer, and epitaxial wafer is made.
As it can be seen that describing the mode that epitaxial wafer is made in the embodiment of the present application, pass through metallo-organic compound chemical gaseous phase
Epitaxial wafer can be made with this with each layer of extension in sedimentation or molecular beam epitaxy technique, to improve the practical of scheme
Property.
As can be seen from the above technical solutions, the application has the following advantages:
In the embodiment of the present application, provide a kind of photodetector, including be arranged successively from bottom to top layer absorbed layer,
Metal layer, deielectric-coating and reflective metals, absorbed layer for absorbing target acquisition light, metal layer include strip grating and on connect
The side of touched electrode, strip grating is located on absorbed layer, and strip grating is for assembling target acquisition light, and upper contact electrode is used
It is electrically connected in by voltage and lower contact electrode, the side of deielectric-coating is located on the other side of strip grating, medium
The other side of film couples and reflective metals, and deielectric-coating is detected for providing the cavity of resonant cavity, reflective metals for reflectance target
Light.Using above-mentioned photodetector, on the one hand the structure of the photodetector is more simple, to reduce the production cost, separately
On the one hand it can be formed simultaneously transverse resonance chamber effect and longitudinal Resonant cavity oscillation Effect using strip grating and reflective metals, is obtained with this
Higher absorptivity.
Detailed description of the invention
Fig. 1 is a schematic diagram of RCE photodetector in existing scheme；
Fig. 2 is a structural schematic diagram of photodetector in the embodiment of the present application；
Fig. 3 is a structural schematic diagram of metal layer in the embodiment of the present application；
Fig. 4 is another structural schematic diagram of photodetector in the embodiment of the present application；
Fig. 5 is another structural schematic diagram of photodetector in the embodiment of the present application；
Fig. 6 is the schematic diagram that different screen periods width influence efficiency of light absorption in the embodiment of the present application；
Fig. 7 is the schematic diagram that different medium film thickness influences absorptivity in the embodiment of the present application；
Fig. 8 is preparation method one embodiment schematic diagram of photodetector in the embodiment of the present application.
Specific embodiment
This application provides the preparation method of a kind of photodetector and photodetector, the on the one hand photodetector
Structure is more simple, to reduce the production cost, on the other hand can be formed simultaneously transverse direction using strip grating and reflective metals
Resonant cavity oscillation Effect and longitudinal Resonant cavity oscillation Effect, obtain higher absorptivity with this.
In the embodiment of description diagram, specific term has for the sake of clarity been used.However, the public affairs of present specification
Open and be not intended to be limited to selected specific term, and should understand that each particular element include run in a similar manner it is complete
Portion's technical equivalents.
If should be appreciated that element or layer be known as another element or layer "upper", " against " another element or layer,
" being connected to " or " being couple to " another element perhaps layer so it can directly on another element or layer, directly against, even
Connect or be couple to another element perhaps layer or there may be intermediary element or layer.On the contrary, if an element is known as
" direct " in another element or layer "upper", " being directly connected to " or " being directly coupled to " another element or layer, then not
There are intermediary element or layers.Identical appended drawing reference always shows identical element.Used here as when, term "and/or" packet
Any and all combinations containing one or more related institute column catalogues.
Book describes the relationship of an elements or features and another elements or features shown in figure for ease of explanation, at this
In can be used spatial relation term, such as " ... under ", " ... below ", "lower", " ... on ", "upper" etc..It should
Understand, spatial relation term intention includes the different orientation of the device in applying or operate in addition to the direction of attached drawing description.Example
Such as, if device in overturning attached drawing, be described as " below other elements or feature " either " in other elements or
Under feature " element will be oriented to " on other elements or feature ".In this way, term for example " ... below " can wrap
Include two orientations above and below.The device (being rotated by 90 ° or in other directions) can be additionally oriented, and herein
Space descriptor also correspondingly understood.
Although term first, second etc. can be used herein to describe various component, assembly units, region, layer and/or portion
Point, it should be understood that these component, assembly units, region, layer, and/or part should not be limited by these terms.Only using these terms
In order to distinguish a component, assembly unit, region, layer or part and another region, layer or part.Thus, be discussed below
One component, assembly unit, region, layer or part are properly termed as second element, component, region, layer or part without departing from this hair
Bright introduction.
Term used herein is used only for the purpose rather than limitation the application of description specific embodiment.Herein
In use, " one " of singular and "the" are also used for comprising plural form, unless the context clearly.It should also be understood that
When used in this specification, term "comprising" is determined there are the feature, entirety, step, operation, element, and/or component,
But do not preclude the presence or addition of one or more other features, entirety, step, operation, component, assembly unit, and/or they
Group.
When describing embodiment shown in the drawings, specific term has for the sake of clarity been used.However, present specification
Disclosure be not limited to selected concrete term, and should understand that each particular element includes the whole run in a similar manner
Technical equivalents.
It should be understood that the application is mainly used in semiconductor devices, under the room temperature of semiconductor electric conductivity between conductor with
Between insulator, and semiconductor has a wide range of applications on radio, television set and thermometric.Semiconductor refers to a kind of conduction
Property can be controlled, and range can be from insulator to the material between conductor.No matter from the perspective of science and technology or economic development, half
The importance of conductor is all very huge.Today most electronic product, such as computer, mobile phone or digital recording
Core cell in machine all has extremely close connection with semiconductor.Common semiconductor material has silicon, germanium and arsenic
Gallium etc..
The application is mainly particularly applicable to photodetector, and photodetector is in military and national economy every field
There is extensive use.It is mainly used for radionetric survey and detection, industry automatic control, Photometric Measurement etc. in visible light or near infrared band
Fiber optic communication.Photodetector provided herein will be introduced by each embodiment below.
Embodiment one contacts electrode under making on lower contact layer；
Using metallo-organic compound chemical gaseous phase deposition (metal-organic chemical vapor
Deposition, MOCVD) technology or molecular beam epitaxy (molecular beam epitaxy, MBE) technology, in N-type substrate
On epitaxial buffer layer, lower contact layer, transition zone and absorbed layer according to this.It, can if remaining region is eroded to lower contact layer
Electrode is contacted to pass through under photoetching process makes on lower contact layer.
Referring to Fig. 2, Fig. 2 is photodetector one embodiment schematic diagram in the embodiment of the present application, the photodetector
Including absorbed layer 40, metal layer 30, deielectric-coating 20 and the reflective metals 10 being arranged successively from bottom to top layer；
Absorbed layer 40 is for absorbing target acquisition light；
Metal layer 30 includes strip grating 301 and upper contact electrode 302, and the side of strip grating 301 is located at absorbed layer
On 40, strip grating 301 is for assembling target acquisition light, and upper contact electrode 302 by voltage and lower contact electrode for being formed
It is electrically connected；
The side of deielectric-coating 20 is located on the other side of strip grating 301, the other side coupling and reflection of deielectric-coating 20
Metal 10, deielectric-coating 20 detect light for reflectance target for providing the cavity of resonant cavity, reflective metals 10.
In the present embodiment, photodetector includes absorbed layer 40, metal layer 30, deielectric-coating 20 and reflective metals 10, i.e.,
As shown in Fig. 2, reflective metals 10 are located at first layer, deielectric-coating 20 is located at the second layer, and metal layer 30 is located at third layer, and absorbed layer
It is then to be located at the 4th layer.It should be noted that there is likely to be other layers between above layers, but upper and lower level ordinal relation
As described above.Wherein, the material of reflective metals 10 can be aluminium (aluminium, Al), which is used for reflectance target
Detect light.Reflective metals 10 are deposited on deielectric-coating 20, and deielectric-coating 20 is for providing the cavity of resonant cavity, and the deielectric-coating 20
Material can be silica (SiO2)。
Metal layer 30 includes strip grating 301 and upper contact electrode 302, wherein the metal layer 30 can be by silver
(argentum, Ag) is made, for the ease of introducing, referring to Fig. 3, Fig. 3 is a structure of metal layer in the embodiment of the present application
Schematic diagram, as shown, stripes are divided into strip grating 301, the strip grating 301 support plasmon, and block portion
It is divided into contact electrode 302, i.e. extraction top electrode.Absorbed layer 40 is mainly used for absorbing target acquisition light.
Target acquisition light is incident in photodetector, by metal layer 30 by vertical incidence optically coupling to transverse resonance
In surface plasma excimer Bloch wave (surface plasmon polariton bloch wave, SPP-BW), make light
Local is near strip grating 301, and uptake zone 40 is very close to strip grating 301, therefore enhances target acquisition light and inhaling
Receive the absorption in area 40.In addition, some light forms longitudinal resonant cavity by strip grating 301 and reflective metals 10,
The light absorption of absorbed layer 40 can be enhanced.
In the embodiment of the present application, provide a kind of photodetector, including be arranged successively from bottom to top layer absorbed layer,
Metal layer, deielectric-coating and reflective metals, absorbed layer for absorbing target acquisition light, metal layer include strip grating and on connect
The side of touched electrode, strip grating is located on absorbed layer, and strip grating is for assembling target acquisition light, and upper contact electrode is used
It is electrically connected in by voltage and lower contact electrode, the side of deielectric-coating is located on the other side of strip grating, medium
The other side of film couples and reflective metals, and deielectric-coating is detected for providing the cavity of resonant cavity, reflective metals for reflectance target
Light.Using above-mentioned photodetector, on the one hand the structure of the photodetector is more simple, to reduce the production cost, separately
On the one hand it can be formed simultaneously transverse resonance chamber effect and longitudinal Resonant cavity oscillation Effect using strip grating and reflective metals, is obtained with this
Higher absorptivity.
Optionally, referring to Fig. 4, Fig. 4 is another structural schematic diagram of photodetector in the embodiment of the present application, such as scheme
Shown, photodetector further includes transition zone 50, which is located under absorbed layer 40, and transition zone 50 can be by N-type phosphorus
Change indium (InP) to be made.Photodetector further includes lower contact layer 70, and lower contact layer 70 is located under transition zone 50, lower contact layer
70 be N-type or the heavy doping contact layer of p-type.Photodetector further includes N-type substrate 90, wherein N-type substrate 90 is located at transition zone
Under 50, N-type substrate 90 with a thickness of 100 ± 10 microns (micrometer, um).Photodetector further includes lower contact electrode
60, wherein lower contact electrode 60 is located on lower contact layer 70, and there is no overlapping between lower contact electrode 60 and metal layer 30
Part.
In the present embodiment, each layer in photodetector of structure and composition will be introduced respectively, in conjunction with Fig. 4 as can be seen that N
Type substrate 90 not only plays a part of electric property in the bottom, but also plays a part of mechanical support.The N-type substrate 90
Thickness can be 100um, and the N-type substrate 90 has carried out polishing treatment in advance, and deposits one layer of anti-reflective film, anti-reflective film
Has the function of anti-reflection property, and the function of preventing electromagnetic-wave leakage or electrostatic from stockpiling structure.
Optionally, one layer of buffer layer 80 is also provided on N-type substrate 90, the thickness of buffer layer 80 can be 500
Nanometer (nanometre, nm) left and right, allows to deposit error in the reasonable scope.Buffer layer 80 can be by InP material or by arsenic
The materials such as indium aluminium (InAlAs) are made.
Lower contact layer 70 can be N-type or the heavy doping contact layer 2 × 10 of p-type18Centimetre (centimeter, cm)-3To 20
×1018cm-3Gallium arsenide phosphide indium (InGaAsP) made of.
Using the photoetching process of standard, electrode 60 is contacted under the production of lower 70 back side of contact layer, lower contact electrode 60 can be with
It is arbitrary shape, as long as not keeping off light incidence section domain.In addition, the material of lower contact electrode 60 can be titanium (Ti), platinum (Pt)
With at least one of golden (Au).
Transition zone 50 can be made of the N-type InGaAsP of 50nm, allow to deposit thickness error in the reasonable scope
Absorbed layer 40 includes the first sub- absorbed layer 402 and the second sub- absorbed layer 401, wherein the first sub- absorbed layer 402 is non-
The material of the absorbed layer of doping, the first sub- absorbed layer 402 can be indium GaAs (InGaAs), and the first sub- absorbed layer 402
With a thickness of 500 ± 300nm.Second sub- absorbed layer 401 is p-type or N-type absorbed layer, and the material of the second sub- absorbed layer 401 can also be with
InGaAs, the second sub- absorbed layer 401 with a thickness of 50 ± 30nm.
Secondly, each layer in photodetector of structure and composition is described in the embodiment of the present application, using these layer of institute
The thickness for forming photodetector is smaller, but will not influence the quality of resonant cavity.In addition, being made by low-loss silvery metal
Loss can be reduced for the material of metal layer, not only has lateral surface plasma excimer Bloch excitation resonance, there are also vertical
To Resonant cavity oscillation Effect, so that the spectral response broader bandwidth of photodetector, to be conducive to be promoted the absorption efficiency of light.
Embodiment two contacts electrode under making on N-type substrate substrate；
Using MOCVD technology or MBE technology, epitaxial buffer layer, transition zone and absorbed layer according to this in N-type substrate.
If remaining region is eroded to N-type substrate, electrode is contacted under can making in N-type substrate by photoetching process.
It is photodetector one embodiment schematic diagram in the embodiment of the present application referring to Fig. 2, Fig. 2, which visits
Surveying device includes the absorbed layer 40 being arranged successively from bottom to top layer, metal layer 30, deielectric-coating 20 and reflective metals 10；
Absorbed layer 40 is for absorbing target acquisition light；
Metal layer 30 includes strip grating 301 and upper contact electrode 302, and the side of strip grating 301 is located at absorbed layer
On 40, strip grating 301 is for assembling target acquisition light, and upper contact electrode 302 by voltage and lower contact electrode for being formed
It is electrically connected；
The side of deielectric-coating 20 is located on the other side of strip grating 301, the other side coupling and reflection of deielectric-coating 20
Metal 10, deielectric-coating 20 detect light for reflectance target for providing the cavity of resonant cavity, reflective metals 10.
In the present embodiment, to Jie of absorbed layer 40 in photodetector, metal layer 30, deielectric-coating 20 and reflective metals 10
It continues and can refer to embodiment one, be not repeated herein.
Optionally, referring to Fig. 5, Fig. 5 is another structural schematic diagram of photodetector in the embodiment of the present application, such as scheme
Shown, photodetector further includes transition zone 50, which is located under absorbed layer 40, and transition zone 50 can be by N-type InP
It is made.Photodetector further includes N-type substrate 90, wherein N-type substrate 90 is located under transition zone 50, the thickness of N-type substrate 90
For 100 ± 10um.Photodetector further includes lower contact electrode 60, wherein and lower contact electrode 60 is located on N-type substrate 90,
And overlapping part is not present between lower contact electrode 60 and metal layer 30.
In the present embodiment, each layer in photodetector of structure and composition will be introduced respectively, in conjunction with Fig. 5 as can be seen that N
Type substrate 90 not only plays a part of electric property, but also plays a part of mechanical support.The thickness of the N-type substrate 90 can be with
For 100um, and the N-type substrate 90 has carried out polishing treatment in advance, and deposits one layer of anti-reflective film, and anti-reflective film has antireflection
The function of property,
Optionally, one layer of buffer layer 80 is also provided on N-type substrate 90, the thickness of buffer layer 80 can be
500nm or so allows to deposit thickness error in the reasonable scope.Buffer layer 80 can be by InP material or by materials such as InAlAs
It is made.
Absorbed layer 40 includes the first sub- absorbed layer 402 and the second sub- absorbed layer 401, wherein the first sub- absorbed layer 402 is non-
The absorbed layer of doping, the material of the first sub- absorbed layer 402 can be InGaAs, and the first sub- absorbed layer 402 with a thickness of 500 ±
300nm.Second sub- absorbed layer 401 is p-type or N-type absorbed layer, and the material of the second sub- absorbed layer 401 is also possible to InGaAs, the
Two sub- absorbed layers 401 with a thickness of 50 ± 30nm.
Secondly, each layer in photodetector of structure and composition is described in the embodiment of the present application, using these layer of institute
The thickness for forming photodetector is smaller, but will not influence the quality of resonant cavity.In addition, being made by low-loss silvery metal
Loss can be reduced for the material of metal layer, not only has lateral surface plasma excimer Bloch excitation resonance, there are also vertical
To Resonant cavity oscillation Effect, so that the spectral response broader bandwidth of photodetector, to be conducive to be promoted the absorption efficiency of light.
In order to make it easy to understand, the thickness to absorbed layer is needed in this application, the thickness of deielectric-coating and the thickness of strip grating
Degree is determined, it is assumed that the central wavelength of target acquisition light be 1550nm, the absorbed layer of selection with a thickness of 120nm, strip light
Grid with a thickness of 50nm, the width of strip grating is 0.24um.
The absorptivity of screen periods width more different first responds, referring to Fig. 6, Fig. 6 is in the embodiment of the present application
The schematic diagram that different screen periods width influence efficiency of light absorption, as shown, Finite-Difference Time-Domain Method (finite-
Difference time-domain, FDTD) simulation result, screen periods width is arranged to 0.43um to 0.5um, other ginsengs
Number is constant, it is apparent that the variation of resonance wavelength.FDTD simulation result is shown when screen periods width is 0.485um most
It is good.
Referring to Fig. 7, Fig. 7 is the signal that different medium film thickness influences absorptivity in the embodiment of the present application
Figure, Fig. 7 compare influence of the medium film thickness to photoelectric detector performance, when deielectric-coating is with a thickness of 0.5um, vertical cavity
Central wavelength is about 1.55um wavelength, therefore SPP-BW effect reinforcing effect is most obvious at this time, can be obtained in the uptake zone of 0.12um
Obtain 80.3% absorptivity.
It can be seen that the application from above analog result and just solve asking for quantum efficiency using very thin uptake zone
Topic, can be made the photodetector of high speed of relatively thin uptake zone.
Referring to Fig. 8, Fig. 8 is preparation method one embodiment schematic diagram of photodetector in the embodiment of the present application, this
Preparation method one embodiment of photodetector includes: in application embodiment
S101, successively epitaxial buffer layer, transition zone and absorbed layer on N-type substrate substrate, and epitaxial wafer is made,
In, N-type substrate is indium phosphide InP substrate, and absorbed layer is heavy doping absorbed layer；
In the present embodiment, MOCVD technology or MBE technology can be used, on substrate epitaxial buffer layer, lower contact according to this
Layer, transition zone and absorbed layer.It, can be by photoetching process in lower contact layer if remaining region is eroded to lower contact layer
Electrode is contacted under upper production.
Or use MOCVD technology or MBE technology, on substrate epitaxial buffer layer, transition zone and absorption according to this
Layer.If remaining region is eroded to semi-insulating substrate, contacted under being made in semi-insulating substrate by photoetching process
Electrode.
MOCVD technology be using III race, the organic compound of II race's element and V race, VI race's element hydride etc. as
Crystal growth source material carries out vapour phase epitaxy on substrate in a manner of pyrolysis, grows various III-V race, II-VI race
Close object semiconductor and the thin layer monocrystal material of their multivariate solid solution.Crystal growth in usual MOCVD system be all
Lead in the cold wall quartz reaction chamber of hydrogen under normal pressure or low pressure and carry out, underlayer temperature is 500 DEG C to 1200 DEG C, with radio frequency induction plus
Hot graphite base, hydrogen are bubbled by the fluid supply of temperature-controllable and carry metallorganic to vitellarium.
MBE technology is a kind of new crystal technique, and method is that semiconductor substrate is placed on ultrahigh vacuum cavity
In, and the monocrystalline substance grown will be needed to be individually placed in jeting furnace (also in the cavity) by the difference of element, by heating respectively
The molecular flow energy ejected to each element of relevant temperature, growing on above-mentioned substrate very thin (can be as thin as monoatomic layer water
It is flat) superlattice structure of monocrystal and several metabolies.
S102, table top is obtained using photoetching process in extension on piece, and uses deep ultraviolet light carving technology or electricity on table top
Beamlet exposure technology determines image corresponding to metal layer；
In the present embodiment, epitaxial wafer makes the square or circle that side length is 50um by lithography using the photoetching process of standard first
The table top of shape carries out sense coupling (inductively coupled then under the exposure mask of photoresist
Plasma, ICP) etching or wet etching, retain mesa region, and remaining region is eroded into lower contact layer or N-type and is served as a contrast
Bottom, wherein remaining region is that epitaxial wafer removes remaining region after table top.
Etching, which refers to, will not shelter the portion that membrane material is sheltered by upper layer in subsurface material by physically and/or chemically method
Divide and remove, to obtain and shelter the completely corresponding figure of film image on subsurface material.Wet etching is i.e. using specific molten
The chemical reaction carried out between liquid and film is not photo-etched the part that glue exposure mask covers to remove film, and reaches the mesh of etching
's.ICP is a kind of very important semiconductor dry etching technology, and dry etching is to generate reaction gas using radio-frequency power supply
Reactivity high ion and electronics carry out physical bombardment and chemical reaction to silicon wafer, and removal needs to go in a selective way
The region removed.Escaping gas is become by the substance that can be, is detached through extract system, finally requires to etch according to design configuration
The depth for needing to realize.
Photoetching process refers under illumination effect, by photoresist (i.e. photoresist) by the pattern transfer on mask plate
Technology on to substrate.Its main process is that ultraviolet light is irradiated to the base with a layer photoresist film by mask plate first
Piece surface causes the photoresist of exposure area to chemically react, then dissolves removal exposure area by developing technique or do not expose
The photoresist (the former claims positive photoresist, and the latter claims negative photoresist) in light region, makes the figure on mask plate be copied to light
It, finally will be in pattern transfer to substrate using lithographic technique on photoresist film.
S103, image corresponding to metal layer is removed using stripping technology, to obtain metal layer, wherein metal
Layer includes strip grating and upper contact electrode, and strip grating and upper contact electrode are to obtain after being deposited by electron beam evaporation
, strip grating is used to assemble the target acquisition light of absorbed layer absorption, and upper contact electrode is used for through voltage and lower contact electrode
It is electrically connected；
In the present embodiment, image corresponding to metal layer is removed using removing (lift-off) technique, to obtain
Metal layer, metal layer include strip grating and upper contact electrode, and strip grating and upper contact electrode are to be steamed by electron beam
It is obtained after hair deposition.
Wherein, lift-off technique is gluing and photoetching on substrate first, then prepares metallic film again, is there is photoetching
The place of glue, metallic film are formed on a photoresist, and without the place of photoresist, metallic film is just formed directly into substrate
On.When removing the photoresist on substrate using solvent, unwanted metal just falls off with the dissolution of photoresist in solvent
In, and be formed directly into the metal part on substrate and then remain to form figure.Removing commonly used in platinum, gold, silicide and
Refractory metal it is graphical.
Electron beam evaporation method is one kind of vacuum vapor plating, is to be directly heated under vacuum conditions using electron beam
Material is evaporated, make to evaporate material gasification and is transported to substrate, the method for forming film is condensed in substrate.It heats and fills in electron beam
In setting, the substance being heated is placed in the mandarin orange whirlpool of water cooling, can avoid evaporating material and reacting with mandarin orange misfortune wall influencing film
Quality, therefore, electron beam vapor deposition method can prepare high purity films, while can dispose in same vapor deposition apparatus more
A increasing misfortune, realization are simultaneously or separately evaporated, and a variety of different substances are deposited.
S104, using chemical vapor deposition CVD technique precipitation medium film on the metal layer；
In the present embodiment, using chemical vapor deposition (chemical vapor deposition, CVD) technique in metal
Precipitation medium film on layer.
CVD technique is specifically as follows plasma enhanced chemical vapor deposition (plasma enhanced chemical
Vapor deposition, PECVD) or inductively coupled plasma chemical vapour deposition (inductively coupled
Plasma chemical vapor deposition, ICPCVD) .PECVD is to make by microwave or radio frequency etc. containing film group
At the gas ionization of atom, it is being partially formed plasma, and plasma chemistry activity is very strong, it is easy to it reacts,
Deposition on substrate goes out desired film.In order to carry out chemical reaction can at a lower temperature, plasma is utilized
Activity promotes to react.
S105, the deposition of reflective metal on deielectric-coating.
In the present embodiment, the last deposition of reflective metal on deielectric-coating.Using photoetching process, ICP technique and wet etching
At least one of technique technique removes deielectric-coating and reflective metals corresponding to non-stripe grating region, that is, gets rid of non-light
The SiO of gate region2With reflective metals above.
Voltage is added between lower contact electrode and upper contact electrode, target acquisition light enters from the back side of photodetector
It penetrates, photodetector can work.
In the embodiment of the present application, a kind of preparation method of photodetector is provided, due to the structure letter of photodetector
It is single, it is therefore, also more simple in technique production.
In the above-described embodiments, can come wholly or partly by software, hardware, firmware or any combination thereof real
It is existing.When implemented in software, it can entirely or partly realize in the form of a computer program product.
It is apparent to those skilled in the art that for convenience and simplicity of description, the system of foregoing description,
The specific work process of device and unit, can refer to corresponding processes in the foregoing method embodiment, and details are not described herein.
In several embodiments provided herein, it should be understood that disclosed system, device and method can be with
It realizes by another way.For example, the apparatus embodiments described above are merely exemplary, for example, the unit
It divides, only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components
It can be combined or can be integrated into another system, or some features can be ignored or not executed.Another point, it is shown or
The mutual coupling, direct-coupling or communication connection discussed can be through some interfaces, the indirect coupling of device or unit
It closes or communicates to connect, can be electrical property, mechanical or other forms.
It, can also be in addition, each functional unit in each embodiment of the application can integrate in one processing unit
It is that each unit physically exists alone, can also be integrated in one unit with two or more units.Above-mentioned integrated list
Member both can take the form of hardware realization, can also realize in the form of software functional units.
The above, above embodiments are only to illustrate the technical solution of the application, rather than its limitations；Although referring to before
Embodiment is stated the application is described in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the spirit and scope of each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution.
Claims (15)
1. a kind of photodetector, which is characterized in that including the absorbed layer, metal layer, medium being arranged successively from bottom to top layer
Film and reflective metals；
The absorbed layer is for absorbing target acquisition light；
The metal layer include strip grating and upper contact electrode, the side of the strip grating be located at the absorbed layer it
On, the strip grating is used for for assembling the target acquisition light, the upper contact electrode through voltage and lower contact electrode
It is electrically connected；
The side of the deielectric-coating is located on the other side of the strip grating, the coupling of the other side of the deielectric-coating with it is described
Reflective metals, the deielectric-coating is for providing the cavity of resonant cavity, and the reflective metals are for reflecting the target acquisition light.
2. photodetector according to claim 1, which is characterized in that the photodetector further includes transition zone, institute
It states transition zone to be located under the absorbed layer, the transition zone is N-type gallium arsenide phosphide indium InGaAsP transition zone.
3. photodetector according to claim 2, which is characterized in that the photodetector further includes lower contact layer,
The lower contact layer is located under the transition zone, and the lower contact layer is the heavy doping contact layer of N-type or p-type.
4. photodetector according to claim 3, which is characterized in that the photodetector further includes the lower contact
Electrode, wherein the lower contact electrode is located on the lower contact layer, and between the lower contact electrode and the metal layer
There is no overlapping parts.
5. photodetector according to claim 2, which is characterized in that the photodetector further includes N-type substrate,
In, the N-type substrate is located under the transition zone.
6. photodetector according to claim 2, which is characterized in that the photodetector further includes the lower contact
Electrode, wherein the lower contact electrode is located under the N-type substrate, and between the lower contact electrode and the metal layer
There is no overlapping parts.
7. photodetector according to any one of claim 1 to 6, which is characterized in that the photodetector also wraps
Buffer layer is included, the buffer layer is located under the absorbed layer, and the buffer layer is located on the N-type substrate, the N-type
Substrate be indium phosphide InP substrate, the buffer layer with a thickness of 500 ± 400 nanometers of nm.
8. photodetector according to any one of claim 1 to 7, which is characterized in that the absorbed layer includes first
Sub- absorbed layer and the second sub- absorbed layer；
The first sub- absorbed layer be undoped absorbed layer, the first sub- absorbed layer with a thickness of 500 ± 300nm；
The second sub- absorbed layer be p-type or N-type absorbed layer, the second sub- absorbed layer with a thickness of 50 ± 30nm.
9. a kind of preparation method of photodetector characterized by comprising
Successively epitaxial buffer layer, transition zone and absorbed layer on N-type substrate substrate, and epitaxial wafer is made, wherein the N-type
Substrate is indium phosphide InP substrate, and the absorbed layer is heavy doping absorbed layer；
Table top is obtained using photoetching process on the epitaxial wafer, and uses deep ultraviolet light carving technology or electronics on the table top
Beam exposure technology determines image corresponding to metal layer；
Image corresponding to the metal layer is removed using stripping technology, to obtain the metal layer, wherein the gold
Belonging to layer includes strip grating and upper contact electrode, and the strip grating and the upper contact electrode are to pass through electron beam evaporation
It is obtained after deposition, the strip grating is used to assemble the target acquisition light of absorbed layer absorption, and the upper contact electrode is for leading to
Overvoltage is electrically connected with lower contact electrode；
Using chemical vapor deposition CVD technique precipitation medium film on the metal layer；
The deposition of reflective metal on the deielectric-coating.
10. preparation method according to claim 9, which is characterized in that the deposition of reflective metal on the deielectric-coating
Later, the method also includes:
Using at least one of the photoetching process, sense coupling ICP technique and wet corrosion technique work
Skill removes the deielectric-coating and the reflective metals corresponding to non-stripe grating region.
11. preparation method according to claim 9, which is characterized in that described to obtain table top using photoetching process, comprising:
Table top is carved from epitaxial wafer using the photoetching process；
Under the exposure mask of photoresist, remaining region is eroded to by lower contact layer using the ICP technique or wet corrosion technique,
Wherein, the remaining region is that the epitaxial wafer removes remaining region after the table top.
12. preparation method according to claim 11, which is characterized in that the method also includes:
The lower contact electrode is made on the lower contact layer of the photoetching process.
13. preparation method according to claim 9, which is characterized in that described to obtain table top using photoetching process, comprising:
The table top of 50 ± 5 microns of um is carved from epitaxial wafer using the photoetching process；
Under the exposure mask of photoresist, remaining region is eroded to by N-type substrate using the ICP technique or wet corrosion technique,
Wherein, the remaining region is that the epitaxial wafer removes remaining region after the table top.
14. preparation method according to claim 13, which is characterized in that the method also includes:
The lower contact electrode is made in the N-type substrate of the photoetching process.
15. the preparation method according to any one of claim 9 to 14, which is characterized in that described on N-type substrate substrate
Successively epitaxial buffer layer, transition zone and absorbed layer, and epitaxial wafer is made, comprising:
Using metallo-organic compound chemical gaseous phase deposition MOCVD technology or molecular beam epitaxy MBE technology, in N-type substrate
Buffer layer described in extension, lower contact layer, the transition zone and the absorbed layer according to this, and the epitaxial wafer is made；
Or,
Using the MOCVD technology or the MBE technology, buffer layer, the mistake described in extension according to this in the N-type substrate
Layer and the absorbed layer are crossed, and the epitaxial wafer is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711446656.6A CN109980038B (en) | 2017-12-27 | 2017-12-27 | Photoelectric detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711446656.6A CN109980038B (en) | 2017-12-27 | 2017-12-27 | Photoelectric detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109980038A true CN109980038A (en) | 2019-07-05 |
| CN109980038B CN109980038B (en) | 2021-03-23 |
Family
ID=67072482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711446656.6A Active CN109980038B (en) | 2017-12-27 | 2017-12-27 | Photoelectric detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109980038B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224034A (en) * | 2019-05-17 | 2019-09-10 | 中国科学院上海技术物理研究所 | A kind of Metal Microcavity infrared detector with resonant selecting frequency function |
| CN110297132A (en) * | 2019-07-25 | 2019-10-01 | 北京无线电计量测试研究所 | A kind of quantum electric field detecting module and electric field intensity measuremenrt method |
| CN111653636A (en) * | 2020-05-13 | 2020-09-11 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Mesa type silicon-based impurity-blocking band terahertz detector and preparation method thereof |
| CN111682078A (en) * | 2020-07-24 | 2020-09-18 | 中国科学技术大学 | Single-row carrier photoelectric detector and manufacturing method thereof |
| CN112768550A (en) * | 2020-12-18 | 2021-05-07 | 中国电子科技集团公司第四十四研究所 | Structure for improving responsivity of back-illuminated photodiode and manufacturing method |
| CN112951942A (en) * | 2021-04-23 | 2021-06-11 | 湖南汇思光电科技有限公司 | Method for manufacturing germanium avalanche photodetector based on gallium arsenide substrate |
| WO2024032172A1 (en) * | 2022-08-11 | 2024-02-15 | 华为技术有限公司 | Group iii-v semiconductor photoelectric detector and optical receiving module |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1427486A (en) * | 2001-12-20 | 2003-07-02 | 中国科学院半导体研究所 | Periodic waveguide structure semi conductor photoelectric detector and manufacturing method |
| CN102478686A (en) * | 2010-11-26 | 2012-05-30 | 中国科学院微电子研究所 | Grating coupler and coupling structure and packaging structure of grating coupler and optical fibers |
| CN102881761A (en) * | 2011-07-15 | 2013-01-16 | 常州光电技术研究所 | Avalanche photo diode (APD) infrared detector and manufacturing method thereof |
| CN103050503A (en) * | 2013-01-10 | 2013-04-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of quantum well infrared photodetector |
| US20130228887A1 (en) * | 2012-03-01 | 2013-09-05 | Raytheon Company | Photodetector with surface plasmon resonance |
| CN106098910A (en) * | 2016-08-24 | 2016-11-09 | 苏州大学 | Based on fluorescence ceramics and polarized white light LED of double-layer nanometer optical grating construction |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
| CN106654856A (en) * | 2017-02-28 | 2017-05-10 | 武汉光迅科技股份有限公司 | Perpendicular cavity surface laser and manufacturing method therefor |
| CN107275422A (en) * | 2017-06-22 | 2017-10-20 | 江南大学 | It is a kind of to strengthen the structure of two-dimentional transient metal sulfide light absorbs |
-
2017
- 2017-12-27 CN CN201711446656.6A patent/CN109980038B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1427486A (en) * | 2001-12-20 | 2003-07-02 | 中国科学院半导体研究所 | Periodic waveguide structure semi conductor photoelectric detector and manufacturing method |
| CN102478686A (en) * | 2010-11-26 | 2012-05-30 | 中国科学院微电子研究所 | Grating coupler and coupling structure and packaging structure of grating coupler and optical fibers |
| CN102881761A (en) * | 2011-07-15 | 2013-01-16 | 常州光电技术研究所 | Avalanche photo diode (APD) infrared detector and manufacturing method thereof |
| US20130228887A1 (en) * | 2012-03-01 | 2013-09-05 | Raytheon Company | Photodetector with surface plasmon resonance |
| CN103050503A (en) * | 2013-01-10 | 2013-04-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of quantum well infrared photodetector |
| CN106098910A (en) * | 2016-08-24 | 2016-11-09 | 苏州大学 | Based on fluorescence ceramics and polarized white light LED of double-layer nanometer optical grating construction |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
| CN106654856A (en) * | 2017-02-28 | 2017-05-10 | 武汉光迅科技股份有限公司 | Perpendicular cavity surface laser and manufacturing method therefor |
| CN107275422A (en) * | 2017-06-22 | 2017-10-20 | 江南大学 | It is a kind of to strengthen the structure of two-dimentional transient metal sulfide light absorbs |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224034A (en) * | 2019-05-17 | 2019-09-10 | 中国科学院上海技术物理研究所 | A kind of Metal Microcavity infrared detector with resonant selecting frequency function |
| CN110297132A (en) * | 2019-07-25 | 2019-10-01 | 北京无线电计量测试研究所 | A kind of quantum electric field detecting module and electric field intensity measuremenrt method |
| CN111653636A (en) * | 2020-05-13 | 2020-09-11 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Mesa type silicon-based impurity-blocking band terahertz detector and preparation method thereof |
| CN111682078A (en) * | 2020-07-24 | 2020-09-18 | 中国科学技术大学 | Single-row carrier photoelectric detector and manufacturing method thereof |
| CN112768550A (en) * | 2020-12-18 | 2021-05-07 | 中国电子科技集团公司第四十四研究所 | Structure for improving responsivity of back-illuminated photodiode and manufacturing method |
| CN112951942A (en) * | 2021-04-23 | 2021-06-11 | 湖南汇思光电科技有限公司 | Method for manufacturing germanium avalanche photodetector based on gallium arsenide substrate |
| WO2024032172A1 (en) * | 2022-08-11 | 2024-02-15 | 华为技术有限公司 | Group iii-v semiconductor photoelectric detector and optical receiving module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109980038B (en) | 2021-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109980038A (en) | A kind of preparation method of photodetector and photodetector | |
| Alias et al. | Enhanced etching, surface damage recovery, and submicron patterning of hybrid perovskites using a chemically gas-assisted focused-ion beam for subwavelength grating photonic applications | |
| Senanayake et al. | Surface plasmon-enhanced nanopillar photodetectors | |
| Massiot et al. | Metal nanogrid for broadband multiresonant light-harvesting in ultrathin GaAs layers | |
| Cao et al. | Resonant germanium nanoantenna photodetectors | |
| Jiao et al. | InP membrane integrated photonics research | |
| Werthen et al. | Surface preparation effects on efficient indium‐tin‐oxide‐CdTe and CdS‐CdTe heterojunction solar cells | |
| CN106785904A (en) | A kind of DFB semiconductor laser preparation method and laser | |
| Li et al. | Self‐powered and flexible photodetector with high polarization sensitivity based on MAPbBr3–MAPbI3 microwire lateral heterojunction | |
| Li et al. | Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure | |
| CN106711761A (en) | Preparation method of DFB (Distributed Feedback) semiconductor laser device and laser device prepared by preparation method | |
| CN108418094A (en) | A kind of preparation method of high speed DFB semiconductor laser | |
| Mauthe et al. | Hybrid III–V silicon photonic crystal cavity emitting at telecom wavelengths | |
| Liu et al. | Flexible omnidirectional self-powered photodetectors enabled by solution-processed two-dimensional layered PbI2 nanoplates | |
| Jiang et al. | Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al, Ga) N Nanowires | |
| CN102340097B (en) | Silicon-based laser and preparation method thereof | |
| Đorđević et al. | Metasurface colloidal quantum dot photodetectors | |
| He et al. | Improving photoelectric conversion with broadband perovskite metasurface | |
| Veerbeek et al. | Molecular monolayers for electrical passivation and functionalization of silicon-based solar energy devices | |
| CN100435285C (en) | A method for preparing the nano-electrode with the negative electronic erosion-resisting agent | |
| Kang et al. | Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting | |
| CN112071927B (en) | Infrared detector and preparation method thereof | |
| CN108110613B (en) | Multi-wavelength semiconductor distributed feedback laser array and preparation method thereof | |
| Cai et al. | Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface | |
| US6194240B1 (en) | Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |