CN110297132A - A kind of quantum electric field detecting module and electric field intensity measuremenrt method - Google Patents
A kind of quantum electric field detecting module and electric field intensity measuremenrt method Download PDFInfo
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- CN110297132A CN110297132A CN201910675269.2A CN201910675269A CN110297132A CN 110297132 A CN110297132 A CN 110297132A CN 201910675269 A CN201910675269 A CN 201910675269A CN 110297132 A CN110297132 A CN 110297132A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
This application discloses a kind of quantum electric field detecting modules, it include: semiconductor base (102), it is set to the Bragg reflector (101A of the semiconductor base (102) tow sides, 101B), and it is set to the encapsulating semiconductor substrate (104) of the semiconductor base (102) side, wherein, the inside of the semiconductor base (102) is equipped with the atomic air chamber (103) of built-in alkali metal, the encapsulating semiconductor substrate (104) is bonded connection with the semiconductor base (102) in the side for being equipped with atomic air chamber (103) opening of the semiconductor base (102), for being sealed to the atomic air chamber (103).Using the measurement method of the quantum electric field detecting module, the volume and discrete optical path component for solving atomic air chamber bring the technical problem that volume is big, tuning is difficult.
Description
Technical field
This application involves signal measurement and detection technique field more particularly to a kind of quantum electric field detecting module and electric-field strengths
Spend measurement method.
Background technique
In recent years, the electric field intensity measuremenrt technology based on Quantum Method is being studied by some countries including China.
Such technology is the quantum Interference using Rydberg atom, that is, utilizes its electromagnetically induced Transparency Phenomenon and Autler-
Townes divides effect, converts the measurement of electric field strength to the measurement of transmitted spectrum frequency.Specifically, that is, a branch of spy is used
Laser and a branch of coupled laser irradiation alkali metal atom gas (rubidium gas etc.) are surveyed, atomic energy level electromagnetically induced transparence is reached
Simultaneously spectrally there are transmission peaks in state, then, when apply one can with close on Rydberg atom energy level resonance electric field when, spectrum
On transmission peaks divide, the width (namely spectrally band width between two peak values) of division is by the electric-field strength that applies
Degree determines.Accordingly, the purpose for converting the measurement of electric field strength to the measurement of transmitted spectrum is just realized.
Since atom system has many advantages, such as repeatable, accurate and stablizes, while gaseous atom is for applying disturbing for electric field
It is dynamic also smaller, and the measurement of spectral frequency can achieve very high-precision.With dipole/detector diode probe, integrated light wave
It leads traditional electric field intensity measuremenrt mode such as LiNbO3 electric-field sensor to compare, the electric field intensity measuremenrt principle of quantum field strength sensor
It is the relationship based on additional electromagnetic field Yu alkali metal atom energy level transition, different frequency range, varying strength may be implemented in principle
Electromagnetic field intensity measurement, and electric field imaging technology can be formed by the measurement of field strength, in the following electric field measurement and electric field
Imaging aspect has important influence future.
Electric field intensity measuremenrt technology based on Quantum Method can effectively improve the measurement accuracy of electric field strength, new to establish
Electric field measurement and calibration system provide theoretical basis.Also, it by using different Rydberg atom energy levels, may be implemented
Electric field intensity measuremenrt in 1GHz-500GHz ultratvide frequency band.For example, the radio frequency field (RF) and the alkalinity for being excited to Rydberg states
The interaction of metallic atom.RF cause the energy of Rydberg states to divide, and pass through electricity by Autler-Townes effect
The detection division of magnetic induction transparency.In fact, the alkali atom being placed in vaporium plays the role of RF- optical transducer, it will
RF electric field intensity measuremenrt is converted to optical frequency measurement.It can be used for measuring wideband using electric field strength is measured in small steam unit
Rate range are as follows: 1GHz to 500GHz.
Despite the use of the measurement essence of electric field strength can be substantially improved in the quantum field strength Detection Techniques based on Rydberg atom
Degree and measurement range, but mainly measured at present using discreet optical elements and glass alkali metal gas chamber, there are measuring devices
The technical problem that volume is big, tuning is complicated.
Summary of the invention
The embodiment of the present application provides a kind of quantum electric field detecting module and electric field intensity measuremenrt method, solves electric field strength and surveys
The complicated problem of the excessive tuning of measuring device volume present in amount technology.
The embodiment of the present application provides a kind of quantum electric field detecting module, comprising:
Semiconductor base, is set to the Bragg reflector of the semiconductor base tow sides, and is set to described
The encapsulating semiconductor substrate of semiconductor-based bottom side, wherein
The inside of the semiconductor base is equipped with the atomic air chamber of built-in alkali metal, and the atomic air chamber opening is set to institute
State semiconductor-based bottom side；
The encapsulating semiconductor substrate is partly led in the side for being equipped with atomic air chamber opening of the semiconductor base with described
Body substrate bonding connection, for being sealed to the atomic air chamber；
The semiconductor base is provided that the first Bragg reflector, the semiconductor base are overleaf arranged in front
Be the second Bragg reflector, the first, second Bragg reflector that is opposite and setting up in parallel forms resonance therebetween
Space.
Further, in the above-mentioned technical solutions, the semiconductor base is GaAs substrate or InP-base bottom.It is described partly to lead
Body seal substrate is GaAs seal substrate or InP seal substrate.
Further, the Bragg reflector is to be made of GaAs material and AlGaAs material, or by GaAs material
Material and InP material are constituted.The Bragg reflector has wavelength selectivity, is 852 nanometers of light and 508 nanometers for wavelength
Light there is the positive reversed high reflectance characteristic of high transmittance.
The embodiment of the present application also provides a kind of electric field intensity measuremenrt method, realizes electric-field strength based on quantum electric field detecting module
Degree measurement, comprising:
Quantum electric field detecting module is placed in space position to be measured；
It using detection light and couples light relatively and is collinearly incident on quantum electric field detecting module from two sides, acquire outgoing
Optical signal is simultaneously translated into corresponding electric signal, according to observing the absorption light with Stark splitting phenomenon on electric signal
Spectrum finds out electric field strength；
Wherein, the quantum electric field detecting module includes semiconductor base, is set to the semiconductor base tow sides
Bragg reflector, and be set to the encapsulating semiconductor substrate of the semiconductor-based bottom side, wherein described semiconductor-based
The inside at bottom is equipped with the atomic air chamber of built-in alkali metal, and the atomic air chamber opening is set to the semiconductor-based bottom side；Institute
The area for stating encapsulating semiconductor substrate is open greater than the atomic air chamber, is open in the atomic air chamber that is equipped with of the semiconductor base
Side be bonded connection with the semiconductor base, for the atomic air chamber seal；The semiconductor base is set in front
What is set is the first Bragg reflector, and the semiconductor base is overleaf provided that the second Bragg reflector, opposite and flat
The first, second Bragg reflector that row is set up forms resonance space therebetween.
Further, in the above-mentioned technical solutions, the semiconductor base is GaAs substrate or InP-base bottom；
The encapsulating semiconductor substrate is GaAs seal substrate or InP seal substrate.The Bragg reflector, be by
GaAs material and AlGaAs material are constituted, or are made of GaAs material and InP material.The Bragg reflector has wave
Long selectivity is that 852 nanometers of light and 508 nanometers of light have the reversed high reflectance characteristic of positive high transmittance for wavelength.
Further, the coupling light is the light that wavelength is 508 nanometers；The detection light is the light that wavelength is 852 nanometers.
The embodiment of the present application use at least one above-mentioned technical solution can reach it is following the utility model has the advantages that
By that in conjunction with the semiconductor base of built-in atomic air chamber, can form and be placed in two Bragg reflector (DBR)
Micro devices structure between a DBR reflector, that is, form integrated quantum electric field detecting module, this can make to visit
It surveys light and coupling light atomic air chamber in module directly interacts, detect light and couple light in the resonant cavity of dbr structure
Be concerned with enhancing in body structure, increases the interaction of light and atom, is conducive to the signal-to-noise ratio of raising system, solves atom gas
The volume of room and discrete optical path component bring the technical problem that volume is big, tuning is difficult.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is one of the application quantum electric field detecting module diagram；
Fig. 2 is one of the application electric field intensity measuremenrt method flow diagram.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall in the protection scope of this application.
Below in conjunction with attached drawing, the technical scheme provided by various embodiments of the present application will be described in detail.
DBR (distributed Bragg reflector, distributed Bragg reflector) be use in the waveguide it is anti-
Emitter.It can be reflected when light passes through different medium in the place at interface, there is refractive index size between the size meeting of reflectivity and medium
It closes, so if our being stacked the film interaction cycle of different refractivity, when light is by these difference refractions
When the film of rate, since the reflected light of each layer carries out constructive interference (Constructive because of the change at phase angle
Interference), then it is combined with each other again together, obtains strong reflection light.If the multimembrane number of plies becomes very more, and film
The difference of refractive index n1, n2, n3 ... become very hour, and light advances just as in the same medium, and reflection coefficient becomes very
It is small.Due to light multi interference and cause interference effect fairly obvious, for wavelength selection become it is very sharp, using
When similar grating situation, such periodic structure is thus referred to as distributed Bragg reflector (Distributed Bragg
reflectors)。
In the technical solution of the application by atomic air chamber in conjunction with DBR, formation is placed in small between two DBR reflectors
Device architecture can make to detect light and couple light directly to interact in module, and detection light and coupling light are in dbr structure
Resonant cavity structure in be concerned with enhancing, increase the interaction of light and atom, be conducive to the signal-to-noise ratio of raising system, solve
The volume of atomic air chamber and discrete optical path component bring the technical problem that volume is big, tuning is difficult.The atomic air chamber can be with
It is the atomic air chamber for being filled with alkali metal.
Based on above-mentioned thinking, the application provides a kind of quantum electric field detecting module, as shown in Figure 1, comprising:
Semiconductor base 102 is set to Bragg reflector 101A, 101B of 102 tow sides of semiconductor base,
And it is set to the encapsulating semiconductor substrate 104 of 102 side of semiconductor base, wherein
The inside of the semiconductor base 102 is equipped with the atomic air chamber 103 of built-in alkali metal, and the atomic air chamber 103 is opened
Mouth is set to 102 side of semiconductor base；
The encapsulating semiconductor substrate 104 the semiconductor base 102 be equipped with atomic air chamber 103 be open side with
The bonding of semiconductor base 102 connection, for being sealed to the atomic air chamber 103；
The semiconductor base 102 is provided that the first Bragg reflector 101A, the semiconductor base exist in front
The back side is provided that the second Bragg reflector 101B, and the first, second Bragg reflector set up relatively and in parallel is in the two
Between form resonance space.
Based on above-mentioned quantum electric field detecting module shown in FIG. 1, the application also provides a kind of electric field intensity measuremenrt method, packet
It includes:
Quantum electric field detecting module is placed in space position to be measured；
It using detection light and couples light relatively and is collinearly incident on quantum electric field detecting module from two sides, acquire outgoing
Optical signal is simultaneously translated into corresponding electric signal, according to observing the absorption light with Stark splitting phenomenon on electric signal
Spectrum finds out electric field strength.Wherein, the coupling light is the light that wavelength is 508 nanometers；The detection light is that wavelength is 852 nanometers
Light.
In the technical solution of above-mentioned quantum electric field detecting module and electric field intensity measuremenrt method, the semiconductor base
It is GaAs substrate or InP-base bottom.The encapsulating semiconductor substrate is GaAs seal substrate or InP seal substrate.The Bradley
Lattice reflector is to be made of GaAs material and AlGaAs material, or be made of GaAs material and InP material.The Bradley
Lattice reflector has wavelength selectivity, is that 852 nanometers of light and 508 nanometers of light have positive high transmittance reversed for wavelength
High reflectance characteristic.
As shown in Figure 1, a variety of building modes can be used in order to construct integrated quantum electric field detecting module.
Embodiment 1: it using existing GaAs substrate or InP-base bottom as the semiconductor base, constructs integrated
Quantum electric field detecting module.
It is first successively prepared Bragg reflector (DBR) in semiconductor base tow sides, the DBR reflector of tow sides is used
In forming resonant cavity structure being clipped in space between the two；
It is open again in the side of semiconductor base, built-in atomic air chamber, the original can be formed by way of etching
Sub- gas chamber can be cylindric or cubic or groove-like；
It is sealed after being filled atom gas to atomic air chamber, wherein the atom gas can be alkali metal atom gas, true
That alkali metal is completed in air chamber fills process processed, is equipped with the side of atomic air chamber opening in semiconductor base, close using semiconductor
Envelope substrate covers the opening of atomic air chamber, is filled with the sealing structure of alkali metal atom gas by bonding pattern formation.
In example 1, existing DBR reflector transfer can also be integrated to semiconductor by film layer transfer techniques
The tow sides of substrate.
Embodiment 2: using the GaAs substrate or InP-base bottom prepared online as the semiconductor base, building integrated one
The quantum electric field detecting module of body.
First prepare the first Bragg reflector (DBR) layer；
GaAs or InP are prepared again as the semiconductor base on the first Bragg reflector (DBR) layer；
The second Bragg reflector (DBR) is prepared on the semiconductor base, at this point, semiconductor base tow sides
DBR reflector is used to be clipped in space formation resonant cavity structure between the two；
It is open again in the side of semiconductor base, built-in atomic air chamber, the original can be formed by way of etching
Sub- gas chamber can be cylindric or cubic or groove-like；
It is sealed after being filled atom gas to atomic air chamber, wherein the atom gas can be alkali metal atom gas, true
That alkali metal is completed in air chamber fills process processed, is equipped with the side of atomic air chamber opening in semiconductor base, close using semiconductor
Envelope substrate covers the opening of atomic air chamber, is filled with the sealing structure of alkali metal atom gas by bonding pattern formation.
Embodiment 3: electric field intensity measuremenrt method
When the working condition of integrated quantum electric field detecting module, detection light and coupling light are incident on original from two sides
Sub- gas chamber interacts in atomic air chamber with alkali metal atom gas, is formed under the constraint of two sides Bragg reflector
Relevant reinforcing effect.When actual measurement, by two beam laser are opposite and atomic air chamber of the collinear incident to inside filled with alkali metal；It adopts
Collect the optical signal after sample cell is emitted, and is translated into corresponding electric signal；Collected electric signal is analyzed, such as
There are electric fields for fruit, so that it may observe the absorption spectrum with Stark splitting phenomenon on signal, and then find out the strong of electric field E
Degree.Using quantum electric field detecting module shown in FIG. 1, the stark effect of alkali metal atom Rydberg energy levels can use to electricity
Field measures, and measurement accuracy is high, is capable of measuring the faint electric field strength to mV/cm rank.
As shown in Fig. 2, giving the flow chart of above-mentioned measurement process, electric field intensity measuremenrt method includes the following steps:
Step 21, quantum electric field detecting module is placed in space position to be measured；
Step 22, using detection light and couple light it is opposite and conllinear be incident on quantum electric field detecting module from two sides, adopt
The optical signal for collecting outgoing is simultaneously translated into corresponding electric signal, according to being observed on electric signal with Stark splitting phenomenon
Absorption spectrum find out electric field strength.
Wherein, the coupling light is the light that wavelength is 508 nanometers；The detection light is the light that wavelength is 852 nanometers.
In the technical solution of the application, by by the semiconductor base of Bragg reflector (DBR) and built-in atomic air chamber
In conjunction with can form the micro devices structure being placed between two DBR reflectors, that is, form integrated quantum electric field
Detecting module, this can make to detect light and couple light atomic air chamber in module directly to interact, and detect light and coupling
Light is concerned in the resonant cavity structure of dbr structure to be enhanced, and is increased the interaction of light and atom, is conducive to raising system
Signal-to-noise ratio, the volume and discrete optical path component for solving atomic air chamber bring the technical problem that volume is big, tuning is difficult.
It should be noted that the terms "include", "comprise" or its any other variant are intended to the packet of nonexcludability
Contain, so that the process, method, commodity or the equipment that include a series of elements not only include those elements, but also including
Other elements that are not explicitly listed, or further include for this process, method, commodity or the intrinsic element of equipment.
In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including the element
Process, method, there is also other identical elements in commodity or equipment.
The above description is only an example of the present application, is not intended to limit this application.For those skilled in the art
For, various changes and changes are possible in this application.All any modifications made within the spirit and principles of the present application are equal
Replacement, improvement etc., should be included within the scope of the claims of this application.
Claims (10)
1. a kind of quantum electric field detecting module characterized by comprising
Semiconductor base (102), be set to the semiconductor base (102) tow sides Bragg reflector (101A,
101B), and it is set to the encapsulating semiconductor substrate (104) of the semiconductor base (102) side, wherein
The inside of the semiconductor base (102) is equipped with the atomic air chamber (103) of built-in alkali metal, the atomic air chamber (103)
Opening is set to the semiconductor base (102) side；
The encapsulating semiconductor substrate (104) is in the side for being equipped with atomic air chamber (103) opening of the semiconductor base (102)
It is bonded connection with the semiconductor base (102), for sealing to the atomic air chamber (103)；
The semiconductor base (102) is provided that the first Bragg reflector (101A), the semiconductor base exist in front
The back side is provided that the second Bragg reflector (101B), and the first, second Bragg reflector set up relatively and in parallel is two
Resonance space is formed between person.
2. quantum electric field detecting module as described in claim 1, which is characterized in that
The semiconductor base is GaAs substrate or InP-base bottom.
3. quantum electric field detecting module as claimed in claim 1 or 2, which is characterized in that
The encapsulating semiconductor substrate is GaAs seal substrate or InP seal substrate.
4. quantum electric field detecting module as claimed in claim 1 or 2, which is characterized in that
The Bragg reflector is to be made of GaAs material and AlGaAs material, or by GaAs material and InP material structure
At.
5. quantum electric field detecting module as claimed in claim 4, which is characterized in that
The Bragg reflector has wavelength selectivity, is that 852 nanometers of light and 508 nanometers of light have forward direction for wavelength
The reversed high reflectance characteristic of high transmittance.
6. a kind of electric field intensity measuremenrt method, which is characterized in that realize electric field intensity measuremenrt, packet based on quantum electric field detecting module
It includes:
Quantum electric field detecting module is placed in space position to be measured；
It using detection light and couples light relatively and is collinearly incident on quantum electric field detecting module from two sides, acquire the light letter of outgoing
Number and be translated into corresponding electric signal, according to observing that the absorption spectrum with Stark splitting phenomenon asks on electric signal
Electric field strength out；
Wherein, the quantum electric field detecting module includes semiconductor base, is set to the cloth of the semiconductor base tow sides
Bragg reflector, and it is set to the encapsulating semiconductor substrate of the semiconductor-based bottom side, wherein the semiconductor base
Inside is equipped with the atomic air chamber of built-in alkali metal, and the atomic air chamber opening is set to the semiconductor-based bottom side；Described half
The area of conductor seal substrate is open greater than the atomic air chamber, in the side for being equipped with atomic air chamber opening of the semiconductor base
Face is bonded connection with the semiconductor base, for sealing to the atomic air chamber；The semiconductor base is in front setting
It is the first Bragg reflector, the semiconductor base is overleaf provided that the second Bragg reflector, sets relatively and in parallel
The first, second vertical Bragg reflector forms resonance space therebetween.
7. electric field intensity measuremenrt method as claimed in claim 6, which is characterized in that
The semiconductor base is GaAs substrate or InP-base bottom；
The encapsulating semiconductor substrate is GaAs seal substrate or InP seal substrate.
8. electric field intensity measuremenrt method as claimed in claims 6 or 7, which is characterized in that
The Bragg reflector is to be made of GaAs material and AlGaAs material, or by GaAs material and InP material structure
At.
9. electric field intensity measuremenrt method as claimed in claim 8, which is characterized in that
The Bragg reflector has wavelength selectivity, is that 852 nanometers of light and 508 nanometers of light have forward direction for wavelength
The reversed high reflectance characteristic of high transmittance.
10. electric field intensity measuremenrt method as claimed in claim 6, which is characterized in that
The coupling light is the light that wavelength is 508 nanometers；
The detection light is the light that wavelength is 852 nanometers.
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| CN113406404A (en) * | 2021-05-31 | 2021-09-17 | 清华大学深圳国际研究生院 | Electric field strength measuring method based on semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113406404A (en) * | 2021-05-31 | 2021-09-17 | 清华大学深圳国际研究生院 | Electric field strength measuring method based on semiconductor device |
| CN113406404B (en) * | 2021-05-31 | 2023-08-01 | 清华大学深圳国际研究生院 | Electric field intensity measuring method based on semiconductor device |
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