CN107703624B - Resonant cavity based on aperiodic sub-wave length grating and distribution Bragg reflector - Google Patents
Resonant cavity based on aperiodic sub-wave length grating and distribution Bragg reflector Download PDFInfo
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- CN107703624B CN107703624B CN201710791448.3A CN201710791448A CN107703624B CN 107703624 B CN107703624 B CN 107703624B CN 201710791448 A CN201710791448 A CN 201710791448A CN 107703624 B CN107703624 B CN 107703624B
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- resonant cavity
- wave length
- sub
- length grating
- reflecting mirror
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0811—Construction or shape of optical resonators or components thereof comprising three or more reflectors incorporating a dispersive element, e.g. a prism for wavelength selection
Abstract
The present invention relates to semiconductor photoelectronic device fields, provide a kind of resonant cavity based on aperiodic sub-wave length grating and distribution Bragg reflector, have the characteristic for the distribution that can control resonant cavity standing internal wave light field.The structure of the resonant cavity is from bottom to top are as follows: distribution Bragg reflector, resonant cavity, aperiodic sub-wave length grating reflecting mirror.Plane incident light reaches aperiodic sub-wave length grating reflecting mirror by resonant cavity, realize the oblique reflection for being biased to resonant cavity center, oblique reflection multiple oscillation in resonant cavity couples, it forms Light Energy and concentrates on the stabilization stationary field in the middle part of chamber, stationary field width is determined by aperiodic sub-wavelength grate structure, to realize the control to resonant cavity standing internal wave field width degree by changing aperiodic sub-wavelength grate structure.The present invention solves the problems, such as conventional resonance chamber not and can control stationary field width, can be widely applied for optic communication and field of optical systems.
Description
Technical field
The present invention relates to semiconductor photoelectronic device field, more particularly, to based on aperiodic sub-wave length grating and point
The resonant cavity of cloth Bragg mirror.
Background technique
With the fast development of optical communication system, semiconductor photoelectronic device is widely used.To study rate
Optical communication system higher, capacity is bigger, it is desirable that scientific research personnel's integrated design Du Genggao, structure is more excellent, performance is more stable half
Conductor opto-electronic device.
Resonant cavity is a kind of important cavity configuration in semiconductor photoelectronic device, is widely used in laser and optical detector
In.Wherein, Fabry-Perot cavity (F-P cavity) is a kind of typical resonant cavity.F-P cavity is also referred to as the parallel chamber of plane, by two
A plane-parallel mirror (radius of curvature of two reflecting mirrors is infinity) composition, one is parallel to the light of resonator axis
Line, the direction of propagation is still parallel to axis after plane-parallel mirror reflects, and does not overflow outside chamber always, is formed in resonant cavity
Stable stationary field.As shown in Figure 1, by two shapes of distribution Bragg reflector 11 and 13 comprising 5 pairs of InP- air-gaps in Fig. 1
At F-P cavity 12, incident ray 14 through distribution Bragg reflector 13 enter F-P cavity 12 in.Formation and F-P in F-P cavity 12
The little stable stationary field 15 of 12 different widths of chamber.
Since the width for the stabilization stationary field that can be formed in each resonant cavity is fixed, and not with the different widths of resonant cavity
Greatly, the width that not can control stationary field changes, and limits resonant cavity application range in optical communication system.Now it is badly in need of providing
A kind of resonant cavity for the stationary field being capable of forming change width.
Summary of the invention
In order to overcome the problems referred above or it at least is partially solved the above problem, the present invention provides be based on aperiodic sub-wavelength
The resonant cavity of grating and distribution Bragg reflector.
The present invention provides a kind of resonant cavities, and the device architecture of resonant cavity is from bottom to top are as follows: distribution Bragg reflector, humorous
Shake chamber, aperiodic sub-wave length grating reflecting mirror, is two mirrors, one cavity configuration.
Wherein, distribution Bragg reflector is made of the alternate dielectric material of refractive index height, and every layer has specifically
Thickness can realize high reflection characteristic in compared with wide spectral range.
Wherein, the aperiodic sub-wave length grating reflecting mirror is made of the biggish two kinds of materials of refringence, has
Specific optical grating construction can carry out oblique reflection to incident beam on the basis of high reflectance.
Wherein, in resonant cavity, incident light reaches aperiodic sub-wave length grating reflecting mirror by resonant cavity, and the reflected beams are real
It is now biased to the oblique reflection at resonant cavity center, the reflected beams are reflected through distribution Bragg reflector again by resonant cavity, arrived again
Oblique reflection is realized up to aperiodic sub-wave length grating reflecting mirror, which constantly repeats, and forms the multiple oscillation drawn close to chamber center.
Resonant cavity edge light beam is mutually coupled with light beam in the middle part of chamber, is formed Light Energy and is concentrated on the stabilization stationary field in the middle part of chamber, standing wave
Field width degree is determined by aperiodic sub-wavelength grate structure, to be realized by changing aperiodic sub-wavelength grate structure to resonance
The control of intracavitary optical field distribution.
Wherein, the specific optical grating construction of the aperiodic sub-wave length grating reflecting mirror includes: one-dimensional, two and three dimensions non-
The reflecting mirror that period sub-wave length grating is constituted；The one-dimensional grating is period and duty ratio in one-dimensional direction with position given row
The sub-wave length grating of column；The two-dimensional grating is period and duty ratio in the two-dimensional direction with the sub-wavelength light of position particular arrangement
Grid；The three-dimensional grating be on the basis of two-dimentional aperiodic sub-wave length grating, grating height with position change grating.
Resonant cavity provided by the invention constitutes one using aperiodic sub-wave length grating reflecting mirror and distribution Bragg reflector
It is a can the resonant cavity of the variable stationary field of formation width can by changing the structural parameters of aperiodic sub-wave length grating reflecting mirror
The controllable stationary field of width is generated in resonant cavity, is breached conventional resonance chamber not and be can control the limitation of stationary field width, so that
Resonant cavity more flexible can be widely used in the design and production of semiconductor photoelectronic device, obtain integrated level it is higher, knot
The semiconductor photoelectronic device that structure is more excellent, performance is more stable.
Detailed description of the invention
Fig. 1 is the standing wave field pattern in resonant cavity in the prior art；
Fig. 2 is the structural schematic diagram for the resonant cavity that one embodiment of the invention provides；
Fig. 3 is the stationary field distributed effect schematic diagram in the resonant cavity that one embodiment of the invention provides；
The one-dimensional strip structure of aperiodic sub-wave length grating reflecting mirror in the resonant cavity that Fig. 4 provides for one embodiment of the invention
Schematic diagram；
The two-dimentional cyclic structure of aperiodic sub-wave length grating reflecting mirror in the resonant cavity that Fig. 5 provides for one embodiment of the invention
Schematic diagram；
The two-dimentional block array of aperiodic sub-wave length grating reflecting mirror in the resonant cavity that Fig. 6 provides for one embodiment of the invention
Structural schematic diagram.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
As shown in Fig. 2, providing a kind of resonant cavity in one embodiment of the invention, the resonant cavity has two mirrors, one chamber knot
Structure, two mirror are respectively aperiodic sub-wave length grating reflecting mirror and distribution Bragg reflector (Distributed Bragg
Reflector, DBR), two mirror is parallel and staggered relatively；One chamber is the resonant cavity that two mirror is constituted.
In Fig. 2, the structure of resonant cavity is from bottom to top are as follows: distribution Bragg reflector 24, resonant cavity 22, aperiodic sub-wavelength
Optical grating reflection mirror 21 constitutes two mirrors, one cavity configuration.Two mirrors utilize molecular beam epitaxy (Molecular Beam Epitaxy,
) or the organic first chemical gaseous phase deposition (Metal Organic Chemical Vapour Deposition, MOCVD) of metal MBE
Etc. technologies epitaxial growth.The distribution Bragg reflector 24 is grouped as by InP and air portion, and resonant cavity 22 is air-gap,
Aperiodic sub-wave length grating reflecting mirror 21 is grouped as by InP and air portion, since the refractive index of InP and air is very big, because
The sub-wave length grating of high index-contrast can be made in this.Wherein air material part used is all made of the processing of hollow out caustic solution,
Reflecting mirror generally InP frame structure.
Incident light 25 reaches aperiodic sub-wave length grating reflecting mirror 21 by resonant cavity 22, and the reflected beams, which are realized, is biased to resonance
The oblique reflection at chamber center, the reflected beams are reflected again by resonant cavity 22 through distribution Bragg reflector 24, arrive again at non-week
Phase sub-wave length grating reflecting mirror 21 realizes oblique reflection, which constantly repeats, and forms the multiple vibration drawn close to 22 center of resonant cavity
It swings.Resonant cavity edge light beam is mutually coupled with light beam in the middle part of chamber, is formed Light Energy and is concentrated on the stabilization stationary field 23 in the middle part of chamber,
The width of stationary field 23 is determined by aperiodic 21 structure of sub-wave length grating reflecting mirror, thus by changing aperiodic sub-wave length grating
21 structure of reflecting mirror realizes the control to 23 width of resonant cavity standing internal wave field.
On the basis of the above embodiments, in the resonant cavity, incident light is passed through toward interflection, and formation width is controllable to stay
Wave field, oblique deflection angle that the width of the stationary field generates reflected light by the aperiodic sub-wave length grating and described humorous
The chamber chamber that shakes is long to be determined.
Referring to Fig. 3, Fig. 3 is a specific implementation special case of the invention, is from top to bottom respectively that distribution bragg is anti-in figure
Penetrate mirror, resonant cavity and aperiodic sub-wave length grating reflecting mirror, in this embodiment, aperiodic sub-wave length grating reflecting mirror and distribution
Bragg mirror constitutes the resonant cavity that a width is 25.14 μm, a height of 18.63 μm (i.e. chamber is long), aperiodic sub-wave length grating
Reflecting mirror with a thickness of 0.5 μm, the oblique deflection angle of reflection in vertical incidence to aperiodic sub-wave length grating reflecting mirror is
1 °, form the stationary field that width is 9.13 μm.
Referring to fig. 4, Fig. 4 is the aperiodic sub-wave length grating mirror structure schematic diagram of one-dimensional strip, and the reflecting mirror is by multiple
The InP gratings strips 41 of different cycles are arranged to make up, and the air part 42 between grating stick is corroded to obtain by hollow out.
Referring to Fig. 5, Fig. 5 is the cyclic annular aperiodic sub-wave length grating mirror structure schematic diagram of two dimension, and the reflecting mirror is by multiple
The InP grating ring 51 of different cycles is nested to be constituted, and is air 52 between grating stick.
Referring to Fig. 6, Fig. 6 is the two-dimentional aperiodic sub-wave length grating mirror structure schematic diagram of block array, the reflecting mirror by
The InP block 61 in multiple and different periods is arranged to make up, and is air 62 between grating block.
- Fig. 6 referring to fig. 4, three-dimensional aperiodic sub-wave length grating reflecting mirror are to change each grating on the basis of Fig. 4-Fig. 6
The thickness of item, grating ring or grating block obtains.
On the basis of the above embodiments, the aperiodic sub-wave length grating reflecting mirror is that oblique deflection mirror or convergence are anti-
Penetrate mirror.
On the basis of the above embodiments, the aperiodic sub-wave length grating reflecting mirror sub-wavelength different by multiple periods
Grating stick is constituted, and different sub-wave length grating stick of the multiple period is about the aperiodic sub-wave length grating reflecting mirror
Central axis bilateral symmetry.
On the basis of the above embodiments, the aperiodic sub-wave length grating reflecting mirror is one-dimensional, two-dimentional or three-dimensional non-
Period sub-wave length grating.
On the basis of the above embodiments, distribution Bragg reflector can be used as a reflecting mirror of resonant cavity, it can also be by
Other reflecting mirrors with high reflectance characteristic replace, such as period sub-wave length grating reflecting mirror.
On the basis of the above embodiments, the screen periods of settable aperiodic sub-wave length grating reflecting mirror 0.3 μm~
Between 1.8 μm, grating duty ratio is 15%~85%, and grating height is 0.1~1.2 μm.
Resonant cavity proposed by the present invention can be in resonance by changing the structural parameters of aperiodic sub-wave length grating reflecting mirror
It is intracavitary to generate the controllable stationary field of width, it breaches conventional resonance chamber not and can control the limitation of stationary field width, so that resonant cavity
More flexible can be widely used in the design and production of semiconductor photoelectronic device, obtain integrated level is higher, structure is more excellent,
The more stable semiconductor photoelectronic device of performance.
Finally, method of the invention is only preferable embodiment, it is not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent replacement, improvement and so on should be included in protection of the invention
Within the scope of.
Claims (4)
1. a kind of resonant cavity, which is characterized in that the resonant cavity has two mirrors, one cavity configuration, and two mirror is respectively aperiodic Asia
Wave length grating reflecting mirror and distribution Bragg reflector or the distribution Bragg reflector are by other with high reflection characteristic
Reflecting mirror replace；Two mirror is parallel and staggered relatively；One chamber is the resonant cavity that two mirror is constituted；
The aperiodic sub-wave length grating reflecting mirror is oblique deflection mirror；
The aperiodic sub-wave length grating reflecting mirror is made of different sub-wave length grating stick of multiple periods, the multiple period
Central axis bilateral symmetry of the different sub-wave length grating sticks about the aperiodic sub-wave length grating reflecting mirror；
In the resonant cavity, incident light is through reciprocal oblique reflection, the controllable stationary field of formation width, the width of the stationary field by
The oblique deflection angle and the cavity length of the resonator chamber that the aperiodic sub-wave length grating generates reflected light determine.
2. resonant cavity according to claim 1, which is characterized in that distribution Bragg reflector period sub-wavelength light
Grid reflecting mirror replaces.
3. resonant cavity according to claim 1 or 2, which is characterized in that the light of the aperiodic sub-wave length grating reflecting mirror
Grid cycle is 0.3 μm~1.8 μm, and duty ratio is 15%~85%, and grating height is 0.1~1.2 μm.
4. resonant cavity according to claim 1 or 2, which is characterized in that the aperiodic sub-wave length grating reflecting mirror is one
Dimension, two dimension or three-dimensional aperiodic sub-wave length grating.
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|---|---|---|---|
| CN201710791448.3A CN107703624B (en) | 2017-09-05 | 2017-09-05 | Resonant cavity based on aperiodic sub-wave length grating and distribution Bragg reflector |
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|---|---|---|---|
| CN201710791448.3A CN107703624B (en) | 2017-09-05 | 2017-09-05 | Resonant cavity based on aperiodic sub-wave length grating and distribution Bragg reflector |
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| CN107703624A CN107703624A (en) | 2018-02-16 |
| CN107703624B true CN107703624B (en) | 2019-10-01 |
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| EP2529454A1 (en) * | 2010-01-29 | 2012-12-05 | Hewlett Packard Development Company, L.P. | Multimode vertical-cavity surface-emitting laser arrays |
| DE112014004277T5 (en) * | 2013-09-18 | 2016-06-16 | Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano), Chinese Academy Of Sciences | Terahertz light source chip, light source device, light source assembly and their manufacturing method |
| CN105490166B (en) * | 2016-01-21 | 2019-07-05 | 苏州苏大维格光电科技股份有限公司 | Micro-cavity laser array and visible light photometer including it |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
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