CN113488846B - Sub-wavelength grating and vertical cavity surface emitting laser - Google Patents
Sub-wavelength grating and vertical cavity surface emitting laser Download PDFInfo
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- CN113488846B CN113488846B CN202110797498.9A CN202110797498A CN113488846B CN 113488846 B CN113488846 B CN 113488846B CN 202110797498 A CN202110797498 A CN 202110797498A CN 113488846 B CN113488846 B CN 113488846B
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 27
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 18
- 230000010355 oscillation Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a sub-wavelength grating and a vertical cavity surface emitting laser. Wherein the sub-wavelength grating comprises: a base layer (2) formed of indium tin oxide; and a grating layer (1) formed of amorphous silicon or aluminum gallium arsenide, the grating layer being formed on the base layer (2). A vertical cavity surface emitting laser based on a sub-wavelength grating of a base layer (2) formed of indium tin oxide as a P-plane mirror, comprising a light emitting device; and a sub-wavelength grating disposed on the P-type doped layer (4) of the light emitting device. A light emitting device therein, comprising: a substrate (8), an N-type doped layer (7) and a support table (10) which are laminated in sequence from bottom to top; the bottom surface of the substrate is provided with a lower electrode (9).
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a sub-wavelength grating and a vertical cavity surface emitting laser.
Background
Conventional VCSEL devices (vertical cavity surface emitting lasers) employ a Distributed Bragg Reflector (DBR) as a high mirror structure, however the DBR has a large thickness, poor electrical conductivity, and severe heat generation. In recent years, a technology of a VCSEL using a high-contrast sub-wavelength grating (HCG) as a high mirror has been developed, and has a wide application field in the fields of optical communication, medical imaging, three-dimensional sensing, and the like.
The sub-wavelength grating is a periodic grating layer with a grating period smaller than the wavelength of light and a grating refractive index and a filling medium refractive index contrast ratio larger. The fundamental mode and the first-order transverse mode of the periodic grating waveguide are interfered to be cancelled by structural design, so that extremely high reflection (> 99.9%) of light of a certain wave band can be realized. The thickness of HCG is often also on the order of sub-wavelength, and the use of HCG instead of DBR as VCSEL mirrors can increase the wavelength tuning rate and shape the outgoing beam. Meanwhile, due to the non-uniform structure of the grating, the grating has a natural selection effect on the polarization state of emergent light.
However, the materials currently used to fabricate the sub-wavelength grating of the VCSEL generally include insulating oxide materials, all-dielectric materials, air-plus-semiconductor/dielectric materials, or all-semiconductor materials, which have excellent optical properties but extremely poor electrical conductivity, which results in problems of difficulty in current injection, small current spreading distance, uneven current distribution, etc. of the high-power, large-caliber HCG VCSEL, and seriously affects the reliability and beam quality of the HCG VCSEL device.
Disclosure of Invention
Aiming at the prior art problems, the invention provides a sub-wavelength grating and a vertical cavity surface emitting laser, which are used for at least partially solving the technical problems.
The embodiment of the invention provides a sub-wavelength grating, which comprises the following components: a base layer formed of indium tin oxide; and a grating layer formed on the base layer; wherein the refractive index of the material used for the grating layer is not lower than twice of that of the indium tin oxide.
According to an embodiment of the present disclosure, the material used for the grating layer includes: amorphous silicon or aluminum gallium arsenide.
According to an embodiment of the present disclosure, the sub-wavelength grating, wherein the grating layer includes a plurality of grating protrusions formed on the substrate layer, and a plurality of grating gaps respectively formed between two grating protrusions, and air is used as a filling medium in the grating gaps. Wherein grating protrusions and grating gaps of the grating layer are arranged to have periodicity in at least one direction, and the shape of the grating protrusions comprises a rectangular stripe shape, a two-dimensional net shape or a two-dimensional column shape.
A vertical cavity surface emitting laser according to another embodiment of the present disclosure includes: a light emitting device; the sub-wavelength grating is arranged on the P-type doped layer of the light-emitting device and used as a P-face reflector of the light-emitting device.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein the light emitting device includes: a substrate, an N-type doped layer and a supporting table comprising the P-type doped layer which are sequentially laminated from bottom to top; the bottom surface of the substrate is provided with a lower electrode;
the sub-wavelength grating is arranged on the supporting table.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein,
The substrate layer of the sub-wavelength grating covers the surface of the support table.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein the support stage further comprises:
The P-type doped layer is arranged on the annular boss;
The substrate layer is provided with an upper electrode on one side opposite to the P-type doped layer, the upper electrode is annular, and a hollowed-out area serving as a light emitting hole of the vertical cavity surface emitting laser is formed in the annular middle.
According to the embodiment of the disclosure, the grating layer of the sub-wavelength grating is arranged in the light emitting hole of the light emitting device and covers the whole area of the light emitting hole.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein the substrate layer of the sub-wavelength grating serves as a phase matching layer of the light emitting device.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, the phase matching layer satisfies the following condition:
Wherein, For the phase difference generated by the oscillation of light in the resonant cavity of the vertical cavity surface emitting laser for one period,Reflection phase for reflecting the light for the sub-wavelength grating,/>The reflection phase, λ, is the wavelength of light and m is any integer, which is the reflection phase of the light by the light emitting device.
According to the sub-wavelength grating provided by the embodiment of the invention, the indium tin oxide material with high conductivity is used as the substrate layer, so that the sub-wavelength grating can be used as the current expansion layer, the current distribution uniformity is improved, the gain of a high-order mode is reduced, and the joule heating is reduced.
The invention also provides a vertical cavity surface emitting laser applying the sub-wavelength grating, which has the beneficial effects that:
The vertical cavity surface emitting laser adopting the sub-wavelength grating as the P-surface reflecting mirror has the characteristics of improving the current distribution uniformity, reducing the high-order mode gain and reducing the joule heating, and can effectively solve the problems of large aperture, uneven current density distribution of high-power VCSEL and large heating power of continuous operation; further, the reliability and the beam quality of the vertical cavity surface emitting laser can be effectively improved.
Drawings
FIG. 1 is a schematic diagram of the structure of a sub-wavelength grating according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a VCSEL employing a sub-wavelength grating as a P-plane mirror according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a VCSEL structure according to an exemplary embodiment of the present invention;
FIG. 4 is a calculation of a reflection spectrum characterizing the grating optical properties of the VCSEL shown in FIG. 3;
fig. 5 is a schematic structural view of a vertical cavity surface emitting laser according to another exemplary embodiment of the present invention;
FIG. 6 is a calculation of a reflection spectrum characterizing the grating optical properties of the VCSEL shown in FIG. 5;
fig. 7 is a schematic structural view of a vertical cavity surface emitting laser according to still another exemplary embodiment of the present invention; and
Fig. 8 is a calculation result of a reflection spectrum characterizing the grating optical characteristics of the vertical cavity surface emitting laser shown in fig. 7.
Reference numerals
1. A grating layer;
2. a base layer;
3. An upper electrode;
A 4P type doped layer;
5. an annular boss;
6. An active region;
A type 7N doped layer;
8. A substrate;
9. A lower electrode;
10. A support table;
11. A grating protrusion;
12. Grating gap.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
Descriptions of structural embodiments and methods of the present invention are disclosed herein. It is to be understood that there is no intention to limit the invention to the particular disclosed embodiments, but that the invention may be practiced using other features, elements, methods and embodiments. Like elements in different embodiments are generally referred to by like numerals.
The embodiment of the invention provides a sub-wavelength grating,
Fig. 1 schematically shows that the sub-wavelength grating in the present invention includes: a base layer 2 formed of indium tin oxide; and a grating layer 1, wherein the grating layer 1 is formed on the substrate layer 2; wherein the refractive index of the material used for the grating layer 1 is not lower than twice that of the indium tin oxide.
In the embodiment of the present invention, the material used for the grating layer 1 includes, but is not limited to, amorphous silicon or aluminum gallium arsenide.
In the embodiment of the present invention, the refractive index of indium tin oxide used for the base layer 2 is 1.6, and therefore, the refractive index of the material used for the grating layer 1 should be 3.2 or more.
As shown in fig. 1, the grating layer 1 includes a plurality of grating projections 11 formed on a substrate layer, and a plurality of grating gaps 12 formed between the two grating projections 11, respectively, and air is used as a filling medium in the grating gaps 12.
As shown in fig. 1, H1 is the grating height, H2 is the thickness of the base layer formed of indium tin oxide, T is the sub-wavelength grating period, and d is the grating width of the grating layer.
As shown in fig. 3, 5, the grating protrusions 11 and the grating gaps 12 of the grating layer 1 shown in the sub-wavelength grating portion of fig. 7 are arranged to have periodicity in at least one direction, and the shape of the grating protrusions 11 includes a rectangular stripe shape, a two-dimensional net shape, or a two-dimensional column shape.
The embodiment of the invention provides a vertical cavity surface emitting laser applying a sub-wavelength grating
Fig. 2 schematically shows that the vertical cavity surface emitting laser in the present invention includes: the sub-wavelength grating is disposed on the P-type doped layer 4 of the light emitting device to serve as a P-plane mirror of the light emitting device.
As shown in fig. 2, the above-mentioned light emitting device includes: a substrate 8, an N-type doped layer 7 and a support table 10 comprising the P-type doped layer 4 which are sequentially laminated from bottom to top; the bottom surface of the substrate is provided with a lower electrode 9; the sub-wavelength grating is arranged on the support table 10.
As shown in fig. 2, the vertical cavity surface emitting laser further includes: an active region 6, and an annular boss 5 provided on the active region and having a selectively oxidized hole formed thereon, the P-type doped layer 4 being provided on the annular boss; an upper electrode 3 is disposed on a side of the base layer opposite to the P-type doped layer 4, the upper electrode 3 is in a ring shape, and a hollow area serving as a light emitting hole of the vertical cavity surface emitting laser is formed in the middle of the ring shape.
As shown in fig. 2, the vertical cavity surface emitting laser further includes: the grating layer 1 of the sub-wavelength grating is provided in the light emitting hole of the light emitting device and covers the entire area of the light emitting hole.
As shown in fig. 2, the vertical cavity surface emitting laser further includes: the substrate layer 2 of the sub-wavelength grating serves as a phase matching layer of the light emitting device. The phase matching layer satisfies the following condition:
Wherein, among them, For the phase difference generated by the oscillation of light in the resonant cavity of the vertical cavity surface emitting laser for one period,/>A reflection phase for reflecting the light for the sub-wavelength grating,/>The reflection phase of the light reflected by the light emitting device is λ, which is the wavelength of light, and m is an arbitrary integer.
Fig. 3 schematically illustrates a particular embodiment of a vertical cavity surface emitting laser.
In this embodiment, the sub-wavelength grating is applied to an 808nm vertical cavity surface emitting laser having a circular light exit hole of a cylindrical support table, and is used as a top surface reflector of the vertical cavity surface emitting laser.
The sub-wavelength grating used in this embodiment is a rectangular stripe grating with a refractive index of 3.8, the grating height is 84nm, the grating width is 226nm, the grating period is 452nm, the grating duty ratio is 0.5, and the refractive index of the substrate layer formed by indium tin oxide is 1.6.
According to the above conditions, the present embodiment performs a simulation based on a strict coupled wave (RCWA) algorithm on the above-mentioned sub-wavelength grating layer based on indium tin oxide, and the incident light is a TE plane wave of a normal incidence plane of an electric field component, so as to obtain a reflection spectrum representing the optical characteristics of the grating as shown in fig. 4. As can be seen from fig. 4, the indium tin oxide-based sub-wavelength grating layer of the present embodiment generates a high reflection band with a reflectance of more than 99% at 792-824nm, and a peak reflectance of 99.98% at 808nm center wavelength.
Fig. 5 schematically illustrates another embodiment of a vertical cavity surface emitting laser.
In this embodiment, the sub-wavelength grating is applied to an 808nm vertical cavity surface emitting laser having a rectangular light exit hole of a cylindrical support table, and is used as a top surface reflector of the vertical cavity surface emitting laser.
The refractive index adopted in the sub-wavelength grating used in the embodiment is 3.5, the material is rectangular strip grating of aluminum gallium arsenide, the grating height is 87nm, the grating width is 181nm, the grating period is 477nm, the grating duty ratio is 0.38, and the refractive index of the basal layer formed by indium tin oxide is 1.6.
According to the above conditions, the present embodiment performs simulation based on the strict coupled wave (RCWA) algorithm on the sub-wavelength grating layer based on indium tin oxide, and the incident light is TE plane wave of the normal incidence electric field component normal incidence plane, so as to obtain a reflection spectrum representing the optical characteristics of the grating as shown in fig. 6. As can be seen from fig. 6, the indium tin oxide-based sub-wavelength grating layer of the present embodiment generates a high reflection band with a reflectance of more than 99% at 792-828nm and a peak reflectance of 99.99% at 808nm center wavelength.
Fig. 7 schematically illustrates another embodiment of a vertical cavity surface emitting laser.
In this embodiment, the sub-wavelength grating is applied to an 808nm vertical cavity surface emitting laser having a rectangular light exit hole of a cylindrical support table, and is used as a top surface reflector of the vertical cavity surface emitting laser.
The refractive index adopted in the sub-wavelength grating used in the embodiment is 3.8, the material is a cuboid columnar grating of amorphous silicon, the grating height is 150nm, the grating x-direction width is 334nm, the grating y-direction width is 191nm, the periods of the grating x and y directions are 477nm, the duty ratio of the grating x direction is 0.7, the duty ratio of the grating y direction is 0.4, and the refractive index of the substrate layer formed by indium tin oxide is 1.6.
According to the above conditions, the present embodiment performs a simulation based on a strict coupled wave (RCWA) algorithm on the above-mentioned sub-wavelength grating layer based on indium tin oxide, and the incident light is a TM plane wave of a normal incidence electric field component normal incidence plane, so as to obtain a reflection spectrum characterizing the optical characteristics of the grating shown in fig. 8. As can be seen from fig. 8, the indium tin oxide-based sub-wavelength grating layer of the present embodiment generates a high reflection band with a reflectance of more than 99% at 796nm to 860nm, and a peak reflectance of 99.98% at 808nm center wavelength.
According to the sub-wavelength grating provided by the embodiment of the invention, the indium tin oxide material with high conductivity is used as the substrate layer, so that the sub-wavelength grating can be used as the current expansion layer, the current distribution uniformity is improved, the gain of a high-order mode is reduced, and the joule heating is reduced. In addition, the substrate layer formed by indium tin oxide is used as a coating material, and has the characteristics of low absorption coefficient and low refractive index, so that a low-loss high-contrast grating layer can be realized in different optical wave bands, and the low-refractive index substrate layer material of the sub-wavelength grating can be enriched in different optical wave bands. In addition, the indium tin oxide is an amorphous material, so that the problem of lattice mismatch with the substrate and the epitaxial layer is avoided, and the stability of an epitaxial structure is not affected in the preparation process. In addition, the indium tin oxide can be deposited by adopting physical means such as sputtering, evaporation and the like in the process of forming the substrate layer, and the cost is low and the process is simple.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be appreciated that the invention is not limited to the specific embodiments described above, but is to be accorded the full scope of the invention as defined by the appended claims.
Claims (9)
1. A sub-wavelength grating, comprising:
A base layer (2) formed of indium tin oxide; and
A grating layer (1), the grating layer (1) being formed on the substrate layer (2); wherein the refractive index of the material used for the grating layer (1) is not lower than twice of that of the indium tin oxide;
The sub-wavelength grating is configured into a rectangular strip grating with a refractive index of 3.8, the grating height is 84nm, the grating width is 226nm, the grating period is 452nm, the grating duty ratio is 0.5, and the refractive index of a substrate layer formed by indium tin oxide is 1.6;
The refractive index is 3.5, the material is rectangular strip grating of aluminum gallium arsenide, the grating height is 87nm, the grating width is 181nm, the grating period is 477nm, the grating duty ratio is 0.38, and the refractive index of a basal layer formed by indium tin oxide is 1.6; and
The refractive index is 3.8, the material is a cuboid columnar grating of amorphous silicon, the grating height is 150nm, the grating x-direction width is 334nm, the grating y-direction width is 191nm, the grating x-direction period and the grating y-direction period are 477nm, the grating x-direction duty ratio is 0.7, the grating y-direction duty ratio is 0.4, and the refractive index of a substrate layer formed by indium tin oxide is any one of 1.6.
2. The sub-wavelength grating of claim 1, wherein,
The grating layer (1) comprises a plurality of grating bulges (11) formed on the substrate layer and a plurality of grating gaps (12) respectively formed between the two grating bulges (11), wherein air is used as a filling medium in the grating gaps (12); wherein the grating protrusions (11) and the grating gaps (12) of the grating layer (1) are arranged to have periodicity in at least one direction, and the shape of the grating protrusions (11) comprises a rectangular stripe shape, a two-dimensional net shape or a two-dimensional column shape.
3. A vertical cavity surface emitting laser comprising:
A light emitting device; and
A sub-wavelength grating according to any one of claims 1-2, which is arranged on the P-doped layer (4) of the light emitting device to act as a P-plane mirror of the light emitting device.
4. The vertical cavity surface emitting laser according to claim 3, wherein the light emitting device comprises:
A substrate (8), an N-type doped layer (7) and a supporting table (10) comprising the P-type doped layer (4) which are sequentially laminated from bottom to top; the bottom surface of the substrate is provided with a lower electrode (9);
The sub-wavelength grating is arranged on the support table (10).
5. The VCSEL as claimed in claim 4, wherein,
The substrate layer of the sub-wavelength grating covers the surface of the support table (10).
6. The vcl as claimed in claim 4 or 5, wherein the support stage further comprises:
an active region (6) and an annular boss (5) which is arranged on the active region and is provided with a selective oxidation hole, wherein the P-type doping layer (4) is arranged on the annular boss;
An upper electrode (3) is arranged on one side of the substrate layer, which is opposite to the P-type doped layer (4), the upper electrode (3) is annular, and a hollowed-out area serving as a light emitting hole of the vertical cavity surface emitting laser is formed in the middle of the annular shape.
7. The VCSEL as defined in claim 6 wherein,
The grating layer (1) of the sub-wavelength grating is arranged in the light emitting hole of the light emitting device and covers the whole area of the light emitting hole.
8. The VCSEL as claimed in claim 3, wherein,
The substrate layer (2) of the sub-wavelength grating serves as a phase matching layer of the light emitting device.
9. The vcl of claim 8, the phase matching layer satisfying the following condition:
Wherein, For the phase difference generated by the oscillation of light in the resonant cavity of the vertical cavity surface emitting laser for one period,/>Reflection phase for reflecting the light for the sub-wavelength grating,/>The reflection phase, λ, is the wavelength of light and m is any integer, which is the reflection phase of the light by the light emitting device.
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| CN101918890A (en) * | 2007-12-12 | 2010-12-15 | 公立大学法人大阪府立大学 | Recombination photons structure element, use this recombination photons structure element surface-emitting laser, Wavelength conversion element, have the laser processing device of this Wavelength conversion element |
| CN106898947A (en) * | 2017-04-05 | 2017-06-27 | 青岛海信宽带多媒体技术有限公司 | A kind of laser and preparation method thereof |
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| TWI227799B (en) * | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
| US8815617B2 (en) * | 2004-10-01 | 2014-08-26 | Finisar Corporation | Passivation of VCSEL sidewalls |
| US20150288145A1 (en) * | 2012-01-25 | 2015-10-08 | Hewlett-Packard Development Company, L.P. | Vertical-cavity surface-emitting lasers with non-periodic gratings |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101918890A (en) * | 2007-12-12 | 2010-12-15 | 公立大学法人大阪府立大学 | Recombination photons structure element, use this recombination photons structure element surface-emitting laser, Wavelength conversion element, have the laser processing device of this Wavelength conversion element |
| CN106898947A (en) * | 2017-04-05 | 2017-06-27 | 青岛海信宽带多媒体技术有限公司 | A kind of laser and preparation method thereof |
| CN108770643A (en) * | 2018-05-17 | 2018-11-09 | 武汉科技大学 | Using solar energy as the Intelligent watering device in energy source |
| CN110429473A (en) * | 2019-08-06 | 2019-11-08 | 中国科学院半导体研究所 | Vertical cavity surface emitting laser and preparation method thereof |
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