CN113948966B

CN113948966B - Surface emitting laser and manufacturing method thereof

Info

Publication number: CN113948966B
Application number: CN202111207033.XA
Authority: CN
Inventors: 刘安金; 张靖
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2021-10-15
Filing date: 2021-10-15
Publication date: 2023-06-13
Anticipated expiration: 2041-10-15
Also published as: CN113948966A

Abstract

The present disclosure provides a surface emitting laser and a method for manufacturing the same, the surface emitting laser includes a suspended grating, and the method for manufacturing the suspended grating includes: s1, sequentially forming a sacrificial layer and a high-refractive-index-difference sub-wavelength grating layer on a substrate, wherein the sacrificial layer is made of GaInP; s2, etching the high refractive index difference sub-wavelength grating layer to obtain a grating pattern; s3, etching the sacrificial layer below the grating pattern to obtain at least two support columns for supporting the grating pattern, wherein corresponding etching time is adopted according to the shape of the grating pattern. The method adopts GaInP as a composition material of the sacrificial layer, forms the support columns below the support beams around the HCG area by controlling etching time and selecting the topological structure of the specific HCG pattern, avoids collapse of the HCG pattern, simplifies the manufacturing process, reduces the manufacturing cost and has the prospect of mass production.

Description

Surface emitting laser and manufacturing method thereof

Technical Field

The present disclosure relates to the field of semiconductor optoelectronic devices, and in particular to a surface emitting laser and a method of fabricating the same.

Background

The Vertical Cavity Surface Emitting Laser (VCSEL) is composed of a substrate, a lower Bragg reflector, an active region, an oxide layer, an upper Bragg reflector, a positive electrode, a negative electrode and the like, the laser cavity of the VCSEL is composed of an upper/lower Bragg reflector (DBR) along the growth direction of a material, and laser light is output along the growth direction of the material, namely, the direction vertical to the substrate. The VCSEL has the advantages of low power consumption, high modulation speed, small volume, low cost, high reliability, circular light beam, two-dimensional array integration and the like due to the unique device structure of the VCSEL, and is widely applied to the fields of optical communication, optical interconnection, printing, display, sensing, consumer electronics and the like.

The bragg reflector (distributed Bragg reflector, DBR) is formed by alternately arranging two materials with different refractive indexes, and the logarithmic number of the DBR is required to be more than 20 pairs to reach the reflectivity of 99.5%, so that the thickness of the whole VCSEL can reach 8 microns, and the material growth is extremely challenging. The reflection bandwidth of DBRs is limited, only 3% -9%. In addition, it is very difficult to fabricate high quality DBRs for GaN-based and InP-based VCSELs. In recent years, it has been found that a high-refractive-index-difference sub-wavelength grating (HCG) has a reflectance close to 1, and a reflection bandwidth of 30% or so, and a thickness of only about 200 nm, and has polarization selectivity. Therefore, HCG is used to replace all or part of the DBR of the VCSEL to achieve single mode, single polarization operation of a high index difference sub-wavelength grating vertical cavity surface emitting laser (HCG-VCSEL).

At present, the suspension type HCG based on GaAs and InP is realized, partial upper DBR of the near infrared band VCSEL is replaced, and the single-mode, single-polarization, low-threshold and rapid wavelength tunable operation is realized. However, in the current manufacturing process of the suspended HCG, because the sacrificial layer below the supporting beams around the HCG area is completely removed by wet etching, the HCG is completely suspended, no supporting beam below the supporting beams around the HCG area is provided, and the suspended HCG is supported by the cantilever connecting beams between the supporting beams around the HCG area and the GaAs substrate material layer. Thus, during the HCG pattern release process, the HCG pattern is very easily collapsed due to the surface tension of the aqueous solution. Currently, in order to avoid collapse of HCG patterns during HCG pattern release, a carbon dioxide critical dryer needs to be used, and a carbon dioxide liquid with low surface tension is used to replace the aqueous solution. However, this HCG pattern release technique requires expensive special equipment, and the process flow is also complicated and the cost is high.

Therefore, the invention provides the HCG-VCSEL and the manufacturing method thereof, and the HCG sacrificial layer is adopted in the manufacturing process of the suspended HCG pattern, when the GaInP sacrificial layer is corroded by a wet method, the corrosion rates of the <001> crystal orientation and the <011> crystal orientation of the GaInP sacrificial layer are different, and the supporting columns are formed below supporting beams around the HCG region by controlling the corrosion time and selecting the topological structure of the specific HCG pattern, so that the HCG pattern can be released in the aqueous solution, the collapse of the HCG pattern is avoided, the manufacturing process is simplified, the manufacturing cost is reduced, and the HCG-VCSEL has the prospect of mass production. Meanwhile, the upper reflector of the high refractive index difference sub-wavelength grating vertical cavity surface emitting laser comprises a Bragg reflector formed by AlGaAs materials, wherein the uppermost layer of the Bragg reflector is a GaAs layer with the thickness of odd times of one quarter wavelength, the semiconductor coupling type surface emitting laser can be realized, the light limiting factor of the surface emitting laser is favorably improved, and the threshold current of the laser is reduced. The invention can be extended to AlInP, inP and other materials with the corrosion rate dependent on the crystal orientation as sacrificial layers. The invention can be extended to air-coupled profile emitting lasers and extended cavity profile emitting lasers. The invention can be used for realizing the one-dimensional high-refractive-index-difference sub-wavelength grating VCSEL and also realizing the two-dimensional high-refractive-index-difference sub-wavelength grating VCSEL.

Disclosure of Invention

Aiming at the defects existing in the prior art, the surface emitting laser and the manufacturing method thereof are provided, wherein GaInP is adopted as a component material of a sacrificial layer in the manufacturing process of a suspended HCG pattern, when the GaInP sacrificial layer is etched, the etching rates of <001> and <011> crystal directions of the GaInP sacrificial layer are different, support columns are formed below support beams around the HCG region by controlling the etching time and selecting the topological structure of a specific HCG pattern, the release of the HCG pattern can be realized in an aqueous solution, the collapse of the HCG pattern is avoided, the manufacturing process is simplified, the manufacturing cost is reduced, and the method has the prospect of mass production.

A manufacturing method of a suspended grating comprises the following steps: s1, sequentially forming a sacrificial layer and a high-refractive-index-difference sub-wavelength grating layer on a substrate, wherein the sacrificial layer is made of GaInP; s2, etching the high refractive index difference sub-wavelength grating layer to obtain a grating pattern; and S3, etching the sacrificial layer below the grating pattern to obtain at least one support column for supporting the grating pattern, wherein corresponding etching time is adopted according to the shape of the grating pattern.

Optionally, the etching solution used in the etching operation in the step S3 is hydrochloric acid, the etching time is 1-10 minutes, and when the sacrificial layer is etched, the grating pattern deflects 0-45 degrees relative to the horizontal direction of the laser mesa to form 2 or 4 support columns.

The manufacturing method of the surface-emitting laser comprises the manufacturing method of the suspended grating, wherein a lower Bragg reflector layer, an active layer, an oxide layer and an upper Bragg reflector layer are sequentially formed between a substrate and a sacrificial layer of the suspended grating; sequentially etching a plurality of pairs of lower Bragg reflectors in the high refractive index difference sub-wavelength grating layer, the sacrificial layer, the upper Bragg reflector layer, the oxide layer, the active layer and the lower Bragg reflector layer; and manufacturing an oxide layer and forming an oxide hole.

Optionally, the method further comprises: forming a buffer layer between the substrate and the lower Bragg reflector layer; and manufacturing an N side electrode on the substrate, and growing a P side electrode on the high refractive index difference sub-wavelength grating layer.

A surface emitting laser manufactured by the manufacturing method of the surface emitting laser comprises the following steps: a substrate for carrying a surface emitting laser; the lower Bragg reflector layer is arranged on the substrate and used for constructing the resonant cavity to form laser oscillation; an active layer disposed above the lower Bragg reflector layer for providing gain generating laser; the oxide layer is used as one layer of the upper Bragg reflector layer and is arranged above the active layer to form an oxide hole for limiting carriers and an optical field; the upper Bragg reflector layer is used for constructing the resonant cavity together with the lower Bragg reflector layer to form laser oscillation; the high refractive index difference sub-wavelength grating layer is arranged above the upper Bragg reflector layer and comprises a suspension part and a support part, the middle part of the support part is provided with an opening, the suspension part is arranged in the opening and is connected with the support part through two connecting arms, and the suspension part is a grating pattern with the hollow middle part and the connected peripheral part; the upper Bragg reflector layer and the lower Bragg reflector layer are used for constructing the resonant cavity together to form laser oscillation; the sacrificial layer is arranged below at least two opposite edges of the periphery of the high-refractive-index-difference sub-wavelength grating layer supporting part and the periphery of the suspension part grating, and is used for enabling air to circulate below the high-refractive-index-difference sub-wavelength grating layer and supporting the high-refractive-index-difference sub-wavelength grating layer.

Optionally, the method further comprises: an N-side electrode electrically connected with the substrate and used for supplying power to the surface-emitting laser; and the P side electrode is electrically connected with the high-refractive-index-difference sub-wavelength grating layer and is used for supplying power to the surface-emitting laser in cooperation with the N side electrode.

Optionally, the material used in the sacrificial layer includes GaInP, and the thickness includes integer multiples of a quarter wavelength, which is required to satisfy the phase matching condition of the HCG-VCSEL; the material used for the upper Bragg reflector layer comprises AlGaAs; the material used for the high refractive index difference sub-wavelength grating layer comprises GaAs.

Optionally, an antioxidation layer is disposed above the upper bragg reflector layer, the material used for the antioxidation layer includes GaAs, and the thickness of the antioxidation layer includes an odd multiple of the wavelength of laser emitted by the quarter-laser, so that the phase matching condition of the HCG-VCSEL needs to be satisfied.

The invention discloses a surface emitting laser and a manufacturing method thereof, which utilize GaInP as a component material of a sacrificial layer in the manufacturing process of a suspended HCG pattern, wherein the corrosion rates of crystal directions of the GaInP sacrificial layer <001> and the GaInP sacrificial layer <011> are different, and support columns are formed below support beams around the HCG region by controlling the corrosion time and selecting a specific topological structure of the HCG pattern, so that the support columns are simple to manufacture and do not need an additional manufacturing process.

After the GaInP sacrificial layer below the HCG pattern is corroded, the HCG pattern can be released even if water surface tension exists in the aqueous solution because the supporting columns are arranged below the supporting beams around the HCG region to support the HCG, and the HCG pattern cannot collapse. Therefore, an expensive carbon dioxide critical dryer is not required to be used for releasing HCG graphics in liquid carbon dioxide, the manufacturing process is simplified, the manufacturing cost is reduced, and the method has a prospect of mass production.

In the invention, the support columns support the support beams around the HCG area, so that HCG cannot sink like a fully suspended HCG, the grating strips cannot bend, and the thickness of the air layer is equal to that of the GaInP sacrificial layer. Therefore, the high refractive index difference sub-wavelength grating vertical cavity surface emitting laser has better controllability of the lasing wavelength.

In the invention, the support columns support the support beams around the HCG area, so that the mechanical stability of the HCG is better than that of the fully suspended HCG, and the reliability of the high refractive index difference sub-wavelength grating vertical cavity surface emitting laser is better.

The upper reflector comprises an upper Bragg reflector formed by AlGaAs materials, wherein the uppermost layer of the upper Bragg reflector is a GaAs layer with the thickness of odd times of one quarter wavelength, thereby realizing the semiconductor coupling type high refractive index difference sub-wavelength grating vertical cavity surface emitting laser, being beneficial to improving the light limiting factor of the laser and reducing the threshold current of the laser.

Drawings

FIG. 1 schematically illustrates a flow chart of a method of fabricating a suspended grating in accordance with an embodiment of the present disclosure;

FIG. 2 schematically illustrates a top view of a suspended grating with two support columns and selecting a first HCG pattern topology in accordance with an embodiment of the present disclosure;

FIG. 3 schematically illustrates a top view of a suspended grating with four support columns and selecting a second HCG graphics topology in accordance with an embodiment of the present disclosure;

FIG. 4 schematically illustrates a top view of a suspended grating with four support columns and selecting a third HCG graphics topology in accordance with an embodiment of the present disclosure;

FIG. 5 schematically illustrates a top view of a suspended grating with four support columns and selecting a fourth HCG graphics topology in accordance with an embodiment of the disclosure;

fig. 6 schematically illustrates a schematic diagram of a method of fabricating a surface emitting laser according to an embodiment of the present disclosure;

fig. 7 schematically illustrates a perspective view of a surface emitting laser according to an embodiment of the present disclosure;

fig. 8 schematically illustrates a cross-sectional view of a surface-emitting laser in accordance with an embodiment of the present disclosure;

FIG. 9 schematically illustrates a standing wave field pattern for a surface-emitting laser with an emission light segment of 940nm in accordance with an embodiment of the present disclosure;

FIG. 10 schematically illustrates a graph of experimental results of a power-current-voltage curve in accordance with an embodiment of the present disclosure;

FIG. 11 schematically illustrates a test spectral diagram of a surface-emitting laser according to an embodiment of the present disclosure;

in the figure, an N side electrode-1, a substrate-2, a buffer layer-3, a lower Bragg reflector layer-4, an active layer-5, an oxide layer-6, an oxide hole-7, an upper Bragg reflector layer-8, a sacrificial layer-9, a suspension portion-10, a P side electrode-11, a high refractive index difference sub-wavelength grating layer-12 and a support column-13.

Detailed Description

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.

Fig. 1 schematically illustrates a flow chart of a method of fabricating a suspended grating in accordance with an embodiment of the present disclosure.

Fig. 2 schematically illustrates a top view of a suspended grating with two support posts 13, selecting a first HCG pattern topology in accordance with an embodiment of the present disclosure.

Fig. 3 schematically illustrates a top view of a suspended grating with four support posts 13, selecting a second HCG pattern topology in accordance with an embodiment of the present disclosure.

Fig. 4 schematically illustrates a top view of a suspended grating with four support posts 13, selecting a third HCG pattern topology in accordance with an embodiment of the present disclosure.

Fig. 5 schematically illustrates a top view of a suspended grating with four support posts 13, selecting a fourth HCG pattern topology in accordance with an embodiment of the present disclosure.

An embodiment of the present disclosure provides a method for manufacturing a suspended grating, as shown in fig. 1, including:

s1, sequentially forming a sacrificial layer 9 and a high-refractive-index-difference sub-wavelength grating layer 12 on a substrate 2, wherein the material used for the sacrificial layer 9 is GaInP;

s2, etching the high refractive index difference sub-wavelength grating layer 12 to obtain a grating pattern;

s3, etching the sacrificial layer 9 below the grating pattern, wherein hydrochloric acid is selected as etching liquid, etching time is 1-10 minutes, when the sacrificial layer 9 is etched, the grating pattern deflects 0-45 degrees relative to the horizontal direction of the laser table surface, corresponding etching time is adopted according to the shape of the grating pattern, and each 10 degrees of deflection is adopted, so that the etching time is reduced by about 2 minutes. To obtain at least one support column 13 for supporting the grating pattern as shown in fig. 2-5, the number of support columns 13 preferably being 2 or 4.

an embodiment of the present disclosure provides a method for manufacturing a surface emitting laser, as shown in fig. 6, including:

s1, sequentially forming a buffer layer 3, a lower Bragg reflector layer 4, an active layer 5, an oxide layer 6, an upper Bragg reflector layer 8, a sacrificial layer 9 and a high refractive index difference sub-wavelength grating layer 12 on a substrate 2 to obtain a device shown in FIG. 6a, wherein the material of the sacrificial layer 9 is GaInP;

s2, growing a P side electrode 11 on the high refractive index difference sub-wavelength grating layer 12 to obtain a device shown in FIG. 6 b;

s3, sequentially etching a P side electrode 11, a high refractive index difference sub-wavelength grating layer 12, a sacrificial layer 9, an upper Bragg reflector layer 8, an oxide layer 6, an active layer 5 and a plurality of pairs of lower Bragg reflectors in a lower Bragg reflector layer 4 to obtain a device shown in FIG. 6 c;

s4, manufacturing an oxide layer 6 and forming an oxide hole 7 to obtain the device shown in FIG. 6 d;

s5, manufacturing an N side electrode 1 on the substrate 2 to obtain the device shown in FIG. 6 e;

s6, spin-coating PMMA electron beam glue on the high refractive index difference sub-wavelength grating layer 12 to obtain a device shown in FIG. 6 f;

s7, exposing and developing the high refractive index difference sub-wavelength grating layer 12 subjected to spin-coating of PMMA by an electron beam to obtain a device shown in FIG. 6 g;

s8, etching and removing PMMA electron beam glue to enable the high refractive index difference sub-wavelength grating layer 12 to form grating patterns with hollowed middle parts and connected peripheral parts, so that a device shown in FIG. 6h is obtained;

s9, etching the sacrificial layer 9 below the grating pattern, so that the sacrificial layer 9 below the middle part of the grating is removed, the sacrificial layer 9 below at least one side of the periphery of the grating is reserved, support columns 13 are formed, the number of the support columns 13 is preferably 2 or 4, and the grating pattern is supported, so that the surface-emitting laser shown in FIG. 6i is obtained.

In some embodiments, the material used for the substrate 2 is n-type GaAs.

In some embodiments, the material used for the buffer layer 3 is n-type GaAs.

In some embodiments, 38.5 pairs of Al are selected for the lower Bragg reflector layer 4 _0.12 Ga _0.88 As/Al _0.9 Ga _0.1 As is a DBR.

In some embodiments, the active layer 5 is selected from 3 InGaAs/GaAsP quantum wells.

In some embodiments, the oxide layer 6 is formed of 30 nm p-type Al _0.98 Ga _0.02 As。

In some embodiments, 4 pairs of Al are selected for the upper Bragg reflector layer 8 _0.12 Ga _0.88 As/Al _0.9 Ga _0.1 As is a DBR.

In some embodiments, the material used for the P-side electrode 11 is TiPtAu.

In some embodiments, the material used for the N-side electrode 1 is AuGeNiAu.

In some embodiments, the formation method of each level in step S1 is a metal organic chemical vapor deposition method or a molecular beam epitaxy method.

In some embodiments, the method of growing the P-side electrode 11 in step S2 is a metal lift-off process.

In some embodiments, the etching in step S3 is dry etching or wet etching.

In some embodiments, the method for fabricating the oxide holes 7 in step S4 selects a high-temperature wet oxidation process, that is, the oxide holes 7 are formed by oxidizing the oxide layer 6 under high-temperature vapor.

In some embodiments, the method for manufacturing the N-side electrode 1 in step S5 is as follows: the N-side electrode 1 was grown and then rapidly annealed at 400 c for 100 seconds.

In some embodiments, the exposure in step S7 is a micro-nano pattern exposure process, including an electron beam exposure process and a nanoimprint process.

In some embodiments, the etching in step S8 is dry etching.

In some embodiments, the etching operation in step S9 is etching, and the etching solution used is hydrochloric acid.

In some embodiments, the etching time of the hydrochloric acid is 1 to 10 minutes.

In some embodiments, the high index-contrast sub-wavelength grating layer 12 is about one-half wavelength thick.

In some embodiments, the sacrificial layer 9 under two opposite sides in the grating periphery remains, i.e. two support posts 13.

In some embodiments, all of the sacrificial layers 9 on the side of the grating Zhou Buxia remain, i.e., four support posts 13.

Fig. 7 schematically illustrates a perspective view of a surface emitting laser according to an embodiment of the present disclosure.

Fig. 8 schematically illustrates a cross-sectional view of a surface-emitting laser in accordance with an embodiment of the present disclosure.

As shown in fig. 7 and 8, a surface emitting laser includes:

a substrate 2 for carrying a surface-emitting laser;

a lower Bragg reflector layer 4 arranged on the substrate 2 for constructing the resonant cavity to form laser oscillation;

a buffer layer 3 is arranged between the substrate 2 and the lower bragg mirror layer 4.

An active layer 5 disposed above the lower Bragg reflector layer 4 for providing gain generating laser light;

the oxidation layer 6 is arranged above the active layer 5, and an oxidation hole 7 is formed in the middle of the oxidation layer and used for limiting carriers and an optical field;

the upper Bragg reflector layer 8 is arranged above the oxide layer 6 and is used for constructing the resonant cavity together with the lower Bragg reflector layer 4 to form laser oscillation;

the high refractive index difference sub-wavelength grating layer 12 is arranged above the upper Bragg reflector layer 8 and comprises a suspension part 10 and a supporting part, an opening is formed in the middle of the supporting part, the suspension part 10 is arranged in the opening and is connected with the supporting part through two connecting arms, and the suspension part 10 is in a grating shape with a hollowed middle part and a connected peripheral part; for forming laser oscillation by constructing the resonant cavity together with the upper bragg reflector layer 8 and the lower bragg reflector layer 4;

the sacrificial layer 9 is arranged below at least two opposite edges of the grating periphery of the high refractive index difference sub-wavelength grating layer 12 and the suspension portion 10, and is used for enabling air to circulate below the high refractive index difference sub-wavelength grating layer 12 and supporting the high refractive index difference sub-wavelength grating layer 12.

An N-side electrode 1 electrically connected with the substrate and used for supplying power to the surface-emitting laser;

the P-side electrode 11 is electrically connected to the high refractive index difference sub-wavelength grating layer 12 for supplying power to the surface emitting laser in cooperation with the N-side electrode 1.

In some embodiments, the sacrificial layer 9 of the surface-emitting laser is made of a material including, but not limited to, gaInP, with a thickness of an integer multiple of a quarter wavelength; materials used for the upper bragg mirror layer 8 include, but are not limited to AlGaAs; the materials used for the high index-contrast sub-wavelength grating layer 12 include, but are not limited to, gaAs.

In some embodiments, an oxidation resistant layer is disposed over the upper bragg mirror layer 8, the oxidation resistant layer being of a material including, but not limited to GaAs, the oxidation resistant layer having a thickness that is an odd multiple of the wavelength of the laser light emitted by the quarter-wave laser.

Fig. 9 schematically shows a standing wave field diagram for a surface-emitting laser with an emission light segment of 940nm according to an embodiment of the present disclosure.

Fig. 10 schematically illustrates a graph of experimental results of a power-current-voltage curve according to an embodiment of the present disclosure.

In some embodiments, as shown in fig. 9 and 10, the band of emitted light of the surface-emitting laser is 940nm, and the threshold current of the surface-emitting laser is 0.6mA.

Fig. 11 schematically illustrates a test spectral diagram of a surface-emitting laser according to an embodiment of the present disclosure.

In some embodiments, as shown in fig. 11, the surface emitting laser may achieve single mode operation at 2mA injection current with a single mode rejection ratio of 43.6dB.

While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.

Claims

1. The manufacturing method of the suspended grating is characterized by comprising the following steps of:

s1, sequentially forming a sacrificial layer (9) and a high-refractive-index-difference sub-wavelength grating layer (12) on a substrate (2), wherein the sacrificial layer (9) is made of GaInP;

s2, etching the high refractive index difference sub-wavelength grating layer (12) to obtain a grating pattern;

s3, etching the sacrificial layer (9) below the grating pattern to obtain 2 or 4 support columns (13) for supporting the grating pattern, wherein a topological structure of a specific HCG pattern is selected according to the shape of the grating pattern, the support columns (13) are formed according to the topological structure and etching time is controlled, etching liquid used in etching operation is hydrochloric acid, the etching time is 1-10 minutes, and when the sacrificial layer (9) is etched, the grating pattern deflects 0-45 degrees relative to the horizontal direction of a laser table top.

2. A method for manufacturing a surface emitting laser based on the method for manufacturing a suspended grating according to claim 1, comprising: a lower Bragg reflector layer (4), an active layer (5), an oxide layer (6) and an upper Bragg reflector layer (8) are sequentially formed between a substrate (2) and a sacrificial layer (9) of the suspended grating;

sequentially etching a plurality of pairs of lower Bragg reflectors in the high refractive index difference sub-wavelength grating layer (12), the sacrificial layer (9), the upper Bragg reflector layer (8), the oxide layer (6), the active layer (5) and the lower Bragg reflector layer (4);

the oxide layer (6) is manufactured by adopting a wet oxidation process, and oxidation holes (7) are formed.

3. The method of manufacturing a surface emitting laser according to claim 2, further comprising:

forming a buffer layer (3) between the substrate (2) and the lower Bragg reflector layer (4);

manufacturing an N-side electrode (1) on a substrate (2);

p-side electrodes (11) are grown on the high refractive index difference sub-wavelength grating layer (12).

4. A surface-emitting laser manufactured based on the manufacturing method of the surface-emitting laser according to claim 2 or 3, characterized by comprising:

a substrate (2) for carrying a surface-emitting laser;

the lower Bragg reflector layer (4) is arranged on the substrate (2) and is used for constructing a resonant cavity to form laser oscillation;

an active layer (5) disposed above the lower Bragg reflector layer (4) for providing gain-generating laser light;

an oxide layer (6) arranged above the active layer (5) to form an oxide hole (7) for limiting carriers and an optical field;

an upper Bragg reflector layer (8) for constructing the resonant cavity together with the lower Bragg reflector layer (4) to form laser oscillation;

the high-refractive index difference sub-wavelength grating layer (12) is arranged above the upper Bragg reflector layer (8) and comprises a suspension part (10) and a supporting part, an opening is formed in the middle of the supporting part, the suspension part (10) is arranged in the opening and is connected with the supporting part through two connecting arms, and the suspension part (10) is a grating pattern with a hollowed middle part and a connected peripheral part; the resonant cavity is constructed together with the upper Bragg reflector layer (8) and the lower Bragg reflector layer (4) to form laser oscillation;

and the sacrificial layer (9) is arranged below at least two opposite edges of the grating periphery of the high-refractive-index-difference sub-wavelength grating layer (12) supporting part and the suspension part (10) and is used for enabling air to circulate below the high-refractive-index-difference sub-wavelength grating layer (12) and supporting the high-refractive-index-difference sub-wavelength grating layer (12).

5. The surface emitting laser according to claim 4, further comprising:

an N-side electrode (1) electrically connected with the substrate and used for supplying power to the surface-emitting laser;

and the P side electrode (11) is electrically connected with the high-refractive-index-difference sub-wavelength grating layer (12) and is used for supplying power to the surface emitting laser in cooperation with the N side electrode (1).

6. The surface emitting laser according to claim 4, characterized in that the material used for the sacrificial layer (9) comprises GaInP, the thickness comprising an integer multiple of a quarter wavelength; the upper Bragg reflector layer (8) is made of A1GaAs; the material used for the high refractive index difference sub-wavelength grating layer (12) comprises GaAs.

7. The surface emitting laser according to claim 6, characterized in that an oxidation-resistant layer is arranged above the upper bragg mirror layer (8), the material used for the oxidation-resistant layer comprises GaAs, and the thickness of the oxidation-resistant layer comprises an odd number of times the laser wavelength emitted by the quarter laser.