CN113488846A - Sub-wavelength grating and vertical cavity surface emitting laser - Google Patents
Sub-wavelength grating and vertical cavity surface emitting laser Download PDFInfo
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- CN113488846A CN113488846A CN202110797498.9A CN202110797498A CN113488846A CN 113488846 A CN113488846 A CN 113488846A CN 202110797498 A CN202110797498 A CN 202110797498A CN 113488846 A CN113488846 A CN 113488846A
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 20
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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Abstract
The invention discloses a sub-wavelength grating and a vertical cavity surface emitting laser. Wherein, sub-wavelength grating includes: a base layer (2) formed of indium tin oxide; and a grating layer (1) formed of amorphous silicon or aluminum gallium arsenide, the grating layer being formed on the base layer (2). A vertical cavity surface emitting laser based on a sub-wavelength grating of a substrate layer (2) formed of indium tin oxide as a P-plane mirror, including a light emitting device; and a sub-wavelength grating disposed on the P-doped layer (4) of the light emitting device. The light emitting device includes: a substrate (8), an N-type doped layer (7) and a support table (10) which are sequentially stacked from bottom to top; the bottom surface of the substrate is provided with a lower electrode (9).
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a sub-wavelength grating and a vertical cavity surface emitting laser.
Background
A conventional VCSEL device (vertical cavity surface emitting laser) employs a Distributed Bragg Reflector (DBR) as a high reflector structure, however, the DBR is thick, poor in electrical conductivity and serious in heat generation. In recent years, a VCSEL technology using a high-contrast sub-wavelength grating (HCG) as a high-reflection mirror has been developed, and has a wide application field in the fields of optical communication, medical imaging, three-dimensional sensing, and the like.
The sub-wavelength grating is a periodic grating layer with a grating period smaller than the wavelength of light and a grating refractive index and a filling medium refractive index with high contrast. The extremely high reflection (> 99.9%) of light in a certain wave band can be realized by the structural design that the interference of the fundamental mode and the first-order transverse mode of the periodic grating waveguide is cancelled. The thickness of the HCG is often in the sub-wavelength range, and the HCG is used for replacing the DBR as a VCSEL reflector to improve the wavelength tuning rate and shape the emergent light beam. Meanwhile, due to the non-uniform structure of the grating, the grating has a natural selection function on the polarization state of emergent light.
However, the materials used for manufacturing the sub-wavelength grating of the VCSEL at present usually include insulating oxide materials, all-dielectric materials, air-doped semiconductor/dielectric materials or all-semiconductor materials, which have excellent optical properties but very poor electrical conductivity, which causes problems of difficulty in current injection, small current spreading distance, non-uniform current distribution, etc. of the HCG VCSEL with high power and large aperture, and seriously affects the reliability and beam quality of the HCG VCSEL device.
Disclosure of Invention
In view of the prior art, the present invention provides a sub-wavelength grating and a vertical cavity surface emitting laser, which are used to at least partially solve the above technical problems.
The embodiment of the invention provides a sub-wavelength grating, which comprises: a base layer formed of indium tin oxide; and a grating layer formed on the base layer; wherein, the refractive index of the material used by the grating layer is not lower than twice of that of the indium tin oxide.
According to the embodiment of the present disclosure, the material used for the grating layer includes: amorphous silicon or aluminum gallium arsenide.
According to the embodiment of the present disclosure, the sub-wavelength grating includes a plurality of grating protrusions formed on the substrate layer, and a plurality of grating gaps respectively formed between two grating protrusions, and air is used as a filling medium in the grating gaps. The grating protrusions and the grating gaps of the grating layer are arranged to have periodicity in at least one direction, and the shapes of the grating protrusions comprise rectangular strips, two-dimensional meshes or two-dimensional columns.
According to another embodiment of the present disclosure, a vertical cavity surface emitting laser includes: a light emitting device; and the sub-wavelength grating is arranged on the P-type doped layer of the light-emitting device and is used as a P-surface reflector of the light-emitting device.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein the light emitting device includes: the substrate, the N-type doping layer and the support platform comprising the P-type doping layer are sequentially stacked from bottom to top; a lower electrode is arranged on the bottom surface of the substrate;
the sub-wavelength grating is arranged on the support table.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein,
the substrate layer of the sub-wavelength grating covers the surface of the support table.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein the supporting stage further includes:
the P-type doping layer is arranged on the annular boss;
and an upper electrode is arranged on one side of the substrate layer opposite to the P-type doping layer, the upper electrode is annular, and a hollow area used as a light outlet hole of the vertical cavity surface emitting laser is formed in the middle of the annular.
According to the embodiment of the present disclosure, a vertical cavity surface emitting laser, wherein a grating layer of the sub-wavelength grating is disposed in a light exit hole of the light emitting device and covers the entire area of the light exit hole.
According to an embodiment of the present disclosure, the vertical cavity surface emitting laser, wherein the base layer of the sub-wavelength grating functions as a phase matching layer of the light emitting device.
According to the vertical cavity surface emitting laser, the phase matching layer satisfies the following condition:
wherein the content of the first and second substances,
a phase difference generated by light oscillating for one period in a cavity of the vcsel,
a reflection phase for the sub-wavelength grating to reflect the light,
λ is a wavelength of light, and m is an arbitrary integer, which is a reflection phase of the light reflected by the light emitting device.
According to the sub-wavelength grating provided by the embodiment of the invention, the material with high conductivity, such as indium tin oxide, is used as the substrate layer, and can be used as the current spreading layer, so that the current distribution uniformity is improved, the high-order mode gain is reduced, and the joule heat generation is reduced.
The invention also provides a vertical cavity surface emitting laser applying the sub-wavelength grating, which has the following beneficial effects:
the vertical cavity surface emitting laser adopting the sub-wavelength grating as the P-surface reflector has the characteristics of improving the current distribution uniformity, reducing the high-order mode gain and reducing the Joule heat generation, and can effectively solve the problems of large aperture, uneven current density distribution and large heat generation power of a high-power VCSEL (vertical cavity surface emitting laser) which continuously works; furthermore, the reliability and the beam quality of the vertical cavity surface emitting laser can be effectively improved.
Drawings
FIG. 1 is a schematic diagram of a sub-wavelength grating structure according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a VCSEL employing a sub-wavelength grating as a P-plane mirror according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a VCSEL structure according to an exemplary embodiment of the present invention;
FIG. 4 is a calculation result of a reflection spectrum characterizing optical characteristics of a grating of the VCSEL shown in FIG. 3;
FIG. 5 is a schematic structural diagram of a VCSEL according to another exemplary embodiment of the present invention;
FIG. 6 is a calculation result of a reflection spectrum characterizing optical characteristics of a grating of the VCSEL shown in FIG. 5;
FIG. 7 is a schematic structural diagram of a VCSEL according to still another exemplary embodiment of the present invention; and
fig. 8 is a calculation result of a reflection spectrum characterizing optical characteristics of a grating of the vertical cavity surface emitting laser shown in fig. 7.
Reference numerals
1, a grating layer;
2 a base layer;
3 an upper electrode;
a 4P-type doped layer;
5, an annular boss;
6 an active region;
7N type doped layer;
8 a substrate;
9 a lower electrode;
10, supporting a table;
11, grating protrusions;
12 grating gaps.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Descriptions of structural embodiments and methods of the present invention are disclosed herein. It is to be understood that there is no intention to limit the invention to the specifically disclosed embodiments and that the invention may be practiced using other features, elements, methods and embodiments. Like elements in different embodiments will generally be given like numerals.
The embodiment of the invention provides a sub-wavelength grating,
fig. 1 schematically shows that the sub-wavelength grating in the present invention includes: a base layer 2 formed of indium tin oxide; and a grating layer 1, the grating layer 1 being formed on the base layer 2; the refractive index of the material used for the grating layer 1 is not lower than twice of that of the indium tin oxide.
In the embodiment of the present invention, the material used for the grating layer 1 includes, but is not limited to, amorphous silicon or aluminum gallium arsenide.
In the embodiment of the present invention, the refractive index of the ito used for the substrate layer 2 is 1.6, so the refractive index of the material used for the grating layer 1 should be 3.2 or more.
As shown in fig. 1, the grating layer 1 includes a plurality of grating protrusions 11 formed on a substrate layer, and a plurality of grating gaps 12 respectively formed between two grating protrusions 11, and air is used as a filling medium in the grating gaps 12.
As shown in fig. 1, H1 is the grating height, H2 is the thickness of the substrate layer formed of indium tin oxide, T is the sub-wavelength grating period, and d is the grating width of the grating layer.
As shown in fig. 3, 5, and 7, the grating protrusions 11 and the grating gaps 12 of the grating layer 1 are arranged to have periodicity in at least one direction, and the shape of the grating protrusions 11 includes a rectangular bar shape, a two-dimensional mesh shape, or a two-dimensional column shape.
The embodiment of the invention provides a vertical cavity surface emitting laser applying a sub-wavelength grating
Fig. 2 schematically shows a vertical cavity surface emitting laser in the present invention including: the sub-wavelength grating is arranged on the P-type doped layer 4 of the light-emitting device to be used as a P-surface reflector of the light-emitting device.
As shown in fig. 2, the above light emitting device includes: a substrate 8, an N-type doped layer 7, and a support table 10 including the P-type doped layer 4, which are stacked in this order from bottom to top; a lower electrode 9 is arranged on the bottom surface of the substrate; the sub-wavelength grating is provided on the support stage 10.
As shown in fig. 2, the vertical cavity surface emitting laser further includes: an active region 6 and a ring-shaped boss 5 which is arranged on the active region and is provided with a selective oxidation hole, wherein the P-type doping layer 4 is arranged on the ring-shaped boss; an upper electrode 3 is disposed on the substrate layer on the side opposite to the P-type doped layer 4, the upper electrode 3 is ring-shaped, and a hollow region serving as an exit hole of the vertical cavity surface emitting laser is formed in the middle of the ring shape.
As shown in fig. 2, the vertical cavity surface emitting laser further includes: the grating layer 1 of the sub-wavelength grating is disposed in the light-emitting hole of the light-emitting device and covers the entire area of the light-emitting hole.
As shown in fig. 2, the vertical cavity surface emitting laser further includes: the substrate layer 2 of the sub-wavelength grating functions as a phase matching layer of the light emitting device. The phase matching layer satisfies the following condition:
wherein, among others,
a phase difference generated by light oscillating for one period in a cavity of the vcsel,
the reflection phase of the sub-wavelength grating for reflecting the light,
λ is a wavelength of light, and m is an arbitrary integer, which is a reflection phase of the light emitting device reflecting the light.
Fig. 3 schematically illustrates a specific embodiment of a vertical cavity surface emitting laser.
In this embodiment, the sub-wavelength grating is applied to a 808nm vcsel having a circular exit hole of a cylindrical support, and the sub-wavelength grating is used as a top mirror of the vcsel.
In the sub-wavelength grating used in this embodiment, a rectangular strip grating having a refractive index of 3.8 is used, the grating height is 84nm, the grating width is 226nm, the grating period is 452nm, the grating duty ratio is 0.5, and the refractive index of the substrate layer formed of indium tin oxide is 1.6.
Based on the above conditions, this example performed a simulation based on the strict coupled wave (RCWA) algorithm on the above-mentioned sub-wavelength grating layer based on indium tin oxide, and the incident light was a TE plane wave of the normal incident electric field component perpendicular to the incident surface, and a reflection spectrum representing the optical characteristics of the grating was obtained as shown in fig. 4. As can be seen from FIG. 4, the sub-wavelength grating layer based on ITO of this embodiment generates a high reflection band with a reflectivity greater than 99% at 792-824nm, and generates a peak reflectivity of 99.98% at the center wavelength of 808 nm.
FIG. 5 schematically illustrates another embodiment of a VCSEL.
In this embodiment, the sub-wavelength grating is applied to a 808nm vcsel having a rectangular exit hole of a cylindrical support, and the sub-wavelength grating is used as a top mirror of the vcsel.
The refractive index adopted in the sub-wavelength grating applied in the embodiment is 3.5, the material is a rectangular strip-shaped grating made of aluminum gallium arsenide, the grating height is 87nm, the grating width is 181nm, the grating period is 477nm, the grating duty ratio is 0.38, and the refractive index of a substrate layer formed by indium tin oxide is 1.6.
Based on the above conditions, this example performed a simulation based on the strict coupled wave (RCWA) algorithm on the above-mentioned sub-wavelength grating layer based on indium tin oxide, and the incident light was a TE plane wave of the normal incident electric field component perpendicular to the incident surface, and a reflection spectrum representing the optical characteristics of the grating was obtained as shown in fig. 6. As can be seen from fig. 6, the sub-wavelength grating layer based on ito in this embodiment generates a high reflection band with a reflectivity greater than 99% at 792-828nm, and generates a peak reflectivity of 99.99% at the center wavelength of 808 nm.
FIG. 7 schematically illustrates another embodiment of a VCSEL.
In this embodiment, the sub-wavelength grating is applied to a 808nm vcsel having a rectangular exit hole of a cylindrical support, and the sub-wavelength grating is used as a top mirror of the vcsel.
The refractive index adopted in the sub-wavelength grating applied in the embodiment is 3.8, the material is a cuboid columnar grating made of amorphous silicon, the height of the grating is 150nm, the width of the grating in the x direction is 334nm, the width of the grating in the y direction is 191nm, the periods of the grating in the x direction and the y direction are 477nm, the duty ratio of the grating in the x direction is 0.7, the duty ratio of the grating in the y direction is 0.4, and the refractive index of a substrate layer formed by indium tin oxide is 1.6.
Under the above conditions, the present example performed a simulation based on a strict coupled wave (RCWA) algorithm on the above-described sub-wavelength grating layer based on indium tin oxide, and the incident light was a TM plane wave in which the normal incident electric field component was perpendicular to the incident surface, and the reflection spectrum representing the optical characteristics of the grating shown in fig. 8 was obtained. As can be seen from fig. 8, the sub-wavelength grating layer based on ito in this embodiment generates a high reflection band with a reflectivity greater than 99% between 796nm and 860nm, and a peak reflectivity of 99.98% at the center wavelength of 808 nm.
According to the sub-wavelength grating provided by the embodiment of the invention, the material with high conductivity, such as indium tin oxide, is used as the substrate layer, and can be used as the current spreading layer, so that the current distribution uniformity is improved, the high-order mode gain is reduced, and the joule heat generation is reduced. In addition, the substrate layer formed by indium tin oxide has the characteristics of low absorption coefficient and low refractive index, so that the low-loss high-contrast grating layer can be realized in different optical bands, and the selection of the low-refractive-index substrate layer material of the sub-wavelength grating can be enriched in different optical bands. In addition, the indium tin oxide is an amorphous material, the problem of lattice mismatch with the substrate and the epitaxial layer is avoided, and the stability of the epitaxial structure cannot be influenced in the preparation process. In addition, the indium tin oxide can be deposited by physical means such as sputtering, evaporation and the like in the process of forming the substrate layer, so that the cost is low and the process is simple.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above embodiments are only examples of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A sub-wavelength grating, comprising:
a base layer (2) formed of indium tin oxide; and
a grating layer (1), the grating layer (1) being formed on the base layer (2); wherein, the refractive index of the material used by the grating layer (1) is not lower than twice of that of the indium tin oxide.
2. The sub-wavelength grating according to claim 1, wherein the grating layer (1) is made of a material comprising:
amorphous silicon or aluminum gallium arsenide.
3. The sub-wavelength grating of claim 1,
the grating layer (1) comprises a plurality of grating protrusions (11) formed on the substrate layer and a plurality of grating gaps (12) respectively formed between the two grating protrusions (11), and air is used as a filling medium in the grating gaps (12); wherein the grating protrusions (11) and the grating gaps (12) of the grating layer (1) are arranged to have periodicity in at least one direction, and the shape of the grating protrusions (11) comprises a rectangular strip shape, a two-dimensional mesh shape or a two-dimensional column shape.
4. A vertical-cavity surface-emitting laser, comprising:
a light emitting device; and
the sub-wavelength grating according to any one of claims 1-3, which is arranged on a P-doped layer (4) of the light emitting device to act as a P-plane mirror of the light emitting device.
5. The VCSEL of claim 4, wherein the light emitting device includes:
the substrate (8), the N-type doping layer (7) and the support platform (10) comprising the P-type doping layer (4) are sequentially stacked from bottom to top; the bottom surface of the substrate is provided with a lower electrode (9);
the sub-wavelength grating is arranged on the support table (10).
6. The VCSEL of claim 5, wherein,
the substrate layer of the sub-wavelength grating covers the surface of the support table (10).
7. The VCSEL of claim 5 or 6, wherein the support stage further includes:
the P-type doping layer comprises an active region (6) and an annular boss (5) which is arranged on the active region and is provided with a selective oxidation hole, wherein the P-type doping layer (4) is arranged on the annular boss;
an upper electrode (3) is arranged on one side, opposite to the P-type doping layer (4), of the substrate layer, the upper electrode (3) is annular, and a hollow area used as a light outlet hole of the vertical cavity surface emitting laser is formed in the middle of the annular.
8. The vertical cavity surface emitting laser according to claim 7,
the grating layer (1) of the sub-wavelength grating is arranged in the light outlet hole of the light emitting device and covers the whole area of the light outlet hole.
9. The VCSEL of claim 4, wherein,
the substrate layer (2) of the sub-wavelength grating is used as a phase matching layer of the light-emitting device.
10. The vcsel of claim 9, wherein the phase-matching layer satisfies the following condition:
wherein the content of the first and second substances,
a phase difference generated by light oscillating for one period in a cavity of the vcsel,
a reflection phase for the sub-wavelength grating to reflect the light,
λ is a wavelength of light, and m is an arbitrary integer, which is a reflection phase of the light reflected by the light emitting device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113948966A (en) * | 2021-10-15 | 2022-01-18 | 中国科学院半导体研究所 | Surface emitting laser and manufacturing method thereof |
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