CN108535801A - Optical filter - Google Patents
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- CN108535801A CN108535801A CN201810240360.7A CN201810240360A CN108535801A CN 108535801 A CN108535801 A CN 108535801A CN 201810240360 A CN201810240360 A CN 201810240360A CN 108535801 A CN108535801 A CN 108535801A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
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Abstract
An embodiment of the present invention provides a kind of optical filters, including：First speculum, and including at least the fabry perot cavity of one second speculum, the reflectivity of the first speculum is more than the first preset value；The centre wavelength of second speculum is located within the scope of the first preset wavelength in the reflectance spectrum of the first speculum centered on preset wavelength；First speculum is arranged in fabry perot cavity, it is respectively arranged with optical optimization layer in the both sides of the first speculum, the reflectivity within the scope of the second preset wavelength that optical optimization floor is used to make optical filter in reflectance spectrum area comprising preset wavelength is less than the second preset value.A kind of optical filter provided in an embodiment of the present invention, pass through a nested low reactance-resistance ratio fabry perot cavity outside the first speculum, it is respectively arranged with optical optimization layer in the both sides of the first speculum, light in one wavelength range can be divided into two parts by the reflection and transmission of speculum, realize the separation of the light of different wave length.
Description
Technical field
The present embodiments relate to optics and optical information technology field, more particularly, to optical filter.
Background technology
In recent years, being constantly progressive with information technology, from every field such as business, industry, communication, community services to people
Routine work, life various aspects gradually accelerate to permeate, the modern information technologies such as internet, cloud computing, big data are deep
Carve the production, life and mode of learning for changing people.
The rapid development of the related fields such as cloud computing and big data service has pushed the great demand to information exchange bandwidth,
No matter in long distance backbone transmission network network or optic communication is all carry vital supporting role in local exchange network.
And light WDM technology is even more the critical support technology of large capacity broadband optical communication application, the 100G such as to have come into operation at present
Optical interconnection technology it is as shown in table 1 below, wavelength-division multiplex technique is the key technology means of long range optical interconnection.
1 three kinds of 100G optical interconnection technologies of table
Wherein, MMF is multimode fibre (Multi-Mode Fiber, MMF), and SMF is single mode optical fiber (Single-Mode
Fiber, SMF), DFB is distributed-feedback Prague (Distributed Feedback Brag, DFB).
Wavelength-division multiplex technique is by different modulates informations in different optical wavelength, so that all information is not
Concurrent multiplexing transmission in same optical wavelength, and then need to separate different light waves in receiving terminal, so as to obtain not
The information that the light of co-wavelength transmits, thus need to demultiplex optical filter.Demultiplexing optical filter used at present is main
There are array waveguide grating filter, Fabry Paro resonant cavity filter and Mach Zehnder interference filter based on optical interference effect
Device, these are all by making the light-wave transmission of specific wavelength realize filter action.Alternatively, it is also possible to by using distribution bragg
The reflection of generation incident light of certain spectral region is realized the filter action of different optical wavelength by speculum.And it specifically answers at some
With occasion, in the transceiver photoelectric chip of such as Vertical collection based on vertical cavity surface emitting laser, a kind of specificity is needed
The optical filter of energy, i.e., the high reflectivity spectral range of speculum is provided about the spectrum of a high-transmission rate in resonant cavity
Range so that the incident light part in particular range of wavelengths is by low-loss reflection, and another part is by low-loss transmission.
So existing be badly in need of providing a kind of optical filter that above-mentioned function may be implemented.
Invention content
It solves the above problems in order to overcome the problems referred above or at least partly, an embodiment of the present invention provides a kind of filters of optics
Wave device, including：
First speculum, and including at least the Fabry-Perot cavity of one second speculum, first speculum
Reflectivity be more than the first preset value；The centre wavelength of second speculum be located in the reflectance spectrum of first speculum with
Within the scope of the first preset wavelength centered on preset wavelength；
First speculum is arranged in the Fabry-Perot cavity, in the both sides of first speculum point
It is not provided with optical optimization layer, the optical optimization floor is for making the optical filter in reflectance spectrum area comprising described pre-
If the reflectivity within the scope of the second preset wavelength of wavelength is less than the second preset value；
The preset wavelength is the reflectance spectrum intermediate waves length direction of first speculum near first of near reflex band
First antinode of the long wave length direction near reflection band in the reflectance spectrum of the corresponding wavelength of antinodal point or first speculum
The corresponding wavelength of point.
A kind of optical filter provided in an embodiment of the present invention passes through a nested low reactance-resistance ratio Fabry-outside the first speculum
Perot resonator cavity is respectively arranged with optical optimization layer in the both sides of the first speculum, can lead to the light in a wavelength range
The reflection and transmission for crossing speculum are divided into two parts, realize the separation of the light of different wave length.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Some bright embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram for optical filter that one embodiment of the invention provides；
First antinode in the reflectance spectrum of first speculum in a kind of optical filter that Fig. 2 provides for one embodiment of the invention
The position view of point；
Fig. 3 is a kind of structural schematic diagram for optical filter that another embodiment of the present invention provides；
Fig. 4 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Fig. 5 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Fig. 6 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Fig. 7 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Fig. 8 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Fig. 9 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Figure 10 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides；
Figure 11 is a kind of reflectance spectrum schematic diagram for optical filter that another embodiment of the present invention provides.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
As shown in Figure 1, one embodiment of the invention provides a kind of optical filter, including：First speculum 1, Yi Jizhi
Include the Fabry-Perot cavity 2 of second speculum 4 less, the reflectivity of first speculum 1, which is more than first, to be preset
Value；The centre wavelength of second speculum 4 is located in the reflectance spectrum of first speculum 1 centered on preset wavelength
Within the scope of one preset wavelength；
First speculum 1 is arranged in the Fabry-Perot cavity 2, in the both sides of first speculum 1
It is respectively arranged with optical optimization layer, the optical optimization floor is for making the optical filter in reflectance spectrum area comprising described
Reflectivity within the scope of second preset wavelength of preset wavelength is less than the second preset value；
The preset wavelength is the reflectance spectrum intermediate waves length direction of first speculum 1 near first of near reflex band
First wave of the long wave length direction near reflection band in the reflectance spectrum of the corresponding wavelength of antinodal point or first speculum 1
The corresponding wavelength of antinode.
Specifically, as shown in Figure 1, being respectively arranged with optical optimization layer 5 and 6 in the both sides of the first speculum 1 in Fig. 1, it is
Convenient for explanation, optical optimization layer 5 is denoted as upper optics optimization layer, optical optimization layer 6 is denoted as lower optical optimization layer.It needs to illustrate
, Fabry-Perot (Fabry-Perot, the F-P) resonant cavity used in the embodiment of the present invention is low-quality factor (i.e. low Q
Value) resonant cavity.Q values are to evaluate the index of optical resonator quality, can be usually defined as Q values in optical resonator memory
The ratio between the energy of the gross energy of storage and the loss of optical resonance intracavitary unit interval, the size of Q values affects the energy storage of resonant cavity, into
And influence the energy of output laser.Simply, the size of Q values carrys out approximate explanation also by the light that cavity mirror reflects, instead
The light penetrated is more, and the light of transmission is fewer, and the Q value of cavity is bigger, and the light of reflection is fewer, i.e., the light penetrated from cavity mirror is got over
More, the Q value of cavity is smaller.So optical filter provided in an embodiment of the present invention nested low reactance-resistance ratio method outside the first speculum
Fabry-Perot-type resonant cavity so that optical filter is while a wavelength range reflected light, and one near reflected light wavelength
Transmitted light in wavelength range realizes the separation of light by reflected light and transmitted light.
In embodiments of the present invention, the specific Q values of low reactance-resistance ratio Fabry-Perot cavity are chosen as needed, as long as
It can make the second speculum in Fabry-Perot cavity can be with transmitted light.Preferably, the embodiment of the present invention
Middle Q values can be selected between 1-100.The reflectivity of second speculum is more than 10%, preferably can be with
Select 10%-60%.Further, it is that Fabry-Perot cavity chooses suitable Q values, the reflectivity of the second speculum
20%-30% can be chosen.
In Fig. 1, the lower speculum of Fabry-Perot cavity 2 is the second speculum 4, and upper reflector 3 is either reflection
Mirror can also be Air Interface, can also be that medium membrane material or semi-conducting material are constituted or medium together with Air Interface
Membrane material is collectively formed with semi-conducting material, to realize the reflex of speculum.
The reflectivity of the first speculum in the embodiment of the present invention needs to be more than the first preset value, this is because only first
The reflectivity of speculum is more than the first preset value, could realize that the light of the first speculum of optical filter pair reflection carries out low-loss
Output.Preferably, the first preset value can choose 90%.
Selection for the second speculum in Fabry-Perot cavity needs to meet certain constraints, i.e., second is anti-
The centre wavelength for penetrating mirror is located within the scope of the first preset wavelength in the reflectance spectrum of the first speculum centered on preset wavelength.
That is the centre wavelength needs of the second speculum are chosen within the scope of the first preset wavelength.First preset wavelength range
Center be preset wavelength, preset wavelength either the reflectance spectrum intermediate waves length direction of the first speculum near near reflex band
The corresponding wavelength of first antinodal point, can also be the first speculum reflectance spectrum in long wave length direction near the of reflection band
The corresponding wavelength of one antinodal point.If there is special requirement, preset wavelength can also be defined as the anti-of the first speculum simultaneously
Penetrate spectrum intermediate waves length direction in the corresponding wavelength of first antinodal point and reflectance spectrum of near reflex band long wave length direction near
The corresponding wavelength of first antinodal point of near reflex band.
As shown in Fig. 2, the midpoints Fig. 21 be the first speculum reflectance spectrum intermediate waves length direction near the first of near reflex band
A antinodal point, point 2 are long wave length direction in the reflectance spectrum of the first speculum near first antinodal point of reflection band.
Preferably, the reflectivity of the first speculum refers to the reflectivity of the first speculum reflection band, the first reflection
The centre wavelength of mirror can select any wavelength in entire spectral region, any in the specific optional sections 850nm-880nm
Wavelength can also select 1550nm as the centre wavelength of the first speculum.When the centre wavelength that the first speculum reflects band is
When 850nm, preset wavelength can select any wavelength in the sections such as 800nm-810nm or 890nm-900nm.
As shown in Figure 1, it is respectively arranged with upper optics optimization layer and lower optical optimization layer in the both sides of the first speculum 1, by
In the presence of upper optics optimization layer and lower optical optimization layer, and the second speculum of the suitable centre wavelength of selection, shape can be made
At optical filter the first speculum reflect band one or both sides have low light reflectivity compose area.Low light reflectivity composes area Nei Bao
Containing preset wavelength, wave-length coverage is the second preset wavelength range.Preferably, low light reflectivity spectrum area can also be to preset wave
Centered on length, it is not specifically limited herein in the embodiment of the present invention.By adjusting upper optics optimization layer and lower optical optimization layer
Thickness or the number of plies can also change the second preset wavelength range.Optical filter can be realized to light in this low light reflectivity spectrum area
Low-loss transmission.
A kind of optical filter provided in an embodiment of the present invention passes through a nested low reactance-resistance ratio Fabry-outside the first speculum
Perot resonator cavity is respectively arranged with optical optimization layer in the both sides of the first speculum, can lead to the light in a wavelength range
The reflection and transmission for crossing speculum are divided into two parts, realize the separation of the light of different wave length.In wavelength-division multiplex technique, the present invention
The optical filter of offer can be described as wavelength-division multiplex demultiplexing optical filter again, and the function of demultiplexing may be implemented, be vertical
Integrated transceiver photoelectric chip, which makes, provides a kind of feasible scheme.Moreover, novel optical provided in an embodiment of the present invention
Filter construction is also applied in the optical system of light wavelength-multiplexing systems transmitter unit of four-in-one, corresponding to reduce
The cost of light emitting unit simultaneously improves its performance, and the further investigation for follow-up wavelength-division multiplex system provides Research foundation.It needs
Illustrate, wavelength-division multiplex technique is only an application scenarios of optical filter provided in an embodiment of the present invention, for it
He needs the scene that the light of different wave length detaches optical filter realization provided in an embodiment of the present invention can be used.
On the basis of the above embodiments, first preset value is 90%, and second preset value is 10%.I.e. first
The reflectivity of speculum needs to be more than 90%, and the optical filter that the first speculum is formed with Fabry-Perot cavity is anti-
Penetrate low light reflectivity spectrum area (the reflectance spectrum area within the scope of the second preset wavelength i.e. centered on preset wavelength) in spectral regions
Reflectivity is less than 10%.
On the basis of the above embodiments, first speculum is distribution Bragg reflector, and the second speculum also may be used
For distribution Bragg reflector.
On the basis of the above embodiments, the Fabry-Perot cavity further includes：Third speculum；The third
Speculum is that either the third speculum is formed by setting material with Air Interface or described distribution Bragg reflector
Third speculum is formed by semi-conducting material and medium membrane material.Specifically, in Fig. 1 Fabry-Perot cavity upper reflection
Mirror 3 is third speculum.
On the basis of the above embodiments, the material of the optical optimization layer and thickness are configured as needed, so that
Reflectivity of the optical filter in reflectance spectrum area within the scope of the second preset wavelength centered on the preset wavelength
Less than the second preset value, the second preset wavelength range can also be further changed.
On the basis of the above embodiments, the number of plies of the optical optimization layer is 1-3 layers.It should be noted that of the invention
The number of plies of optical optimization layer in embodiment can be 1 layer, can also be multilayer, the number of plies is more, and cost is bigger, but embodies
Effect with the number of plies to lack phase difference little.Therefore it is cost-effective, optical optimization layer can be set to 1-3 layers.
On the basis of the above embodiments, the first preset wavelength ranging from wave-length coverage of 40nm, i.e., the second reflection
The centre wavelength of mirror is located at preset wavelength in the reflectance spectrum of the first speculum and adds deduct in the range of 20nm；The second default wave
Long range is at least the wave-length coverage of 10nm, i.e. optical optimization layer makes optical filter form one and be at least the low anti-of 10nm
Penetrate spectral regions.
On the basis of the above embodiments, the optical filter further includes：Optical filter substrate；Second reflection
Mirror is arranged on the optical filter substrate.
The optical filter further includes：Incident layer, the incident layer are arranged in the top of upper reflector 3.Incident light is logical
Incident layer is crossed to enter in Fabry-Perot cavity 2.
On the basis of the above embodiments, the material of the optical filter is medium membrane material or semi-conducting material, or
The material that person is collectively formed by semi-conducting material and medium membrane material.Specifically, medium membrane material can be silica, an oxygen
SiClx, magnesium fluoride, aluminium oxide, titanium oxide, cerium oxide, cerium fluoride, zinc sulphide and silicon nitride etc..Semi-conducting material can be gallium
Arsenic, indium gallium arsenic, aluminum gallium arsenide, indium aluminum gallium arsenide, indium phosphorus, gallium nitrogen, indium gallium nitrogen, indium gallium nitrogen arsenic and InGaAsP etc..
Optical filter provided by the invention is introduced below by way of specific example.It is illustrated in figure 3 in detail below
The structure of the optical filter of exemplary application.Wherein, upper reflector 3 and the composition Fabry-Perot of distribution Bragg reflector 4 are humorous
Shake chamber 2, and high reflection ratio distribution Bragg reflective mirror 1 is provided in Fabry-Perot cavity 2, is distributed cloth in high reflectance
The upper side and lower side of glug speculum 1 is respectively arranged with optics optimization layer 5 and lower optical optimization layer 6.Distributed Blatt reflective
Optical filter substrate 7 is provided below in mirror 4, and 3 top of upper reflector is provided with incident layer 8.
The material of optical filter substrate 7 is Al0.2Ga0.8As materials, material (the hereinafter referred to as incident material of the plane of incidence 8
Material) it is Al0.3Ga0.8As materials, high reflection ratio distribution Bragg reflective mirror 1 is by 28 couples of Al0.15Ga0.85As/Al0.9Ga0.1As tetra- divides
One of the semiconductor material layer of wavelength thickness constitute, centre wavelength is located at 850nm, and shortwave length direction is near reflecting the of band
The corresponding wavelength of one antinodal point (hereinafter referred to as the first antinodal point of short wavelength wavelength) is located at 805nm, Fabry-Perot cavity
2 upper reflector 3 is by 2 couples of Al0.15Ga0.85As/Al0.9Ga0.1As centre wavelengths are the half of the quarter-wave thickness of 805nm
Conductor material layer is constituted, and the second speculum 4 of Fabry-Perot cavity 2 is by 1 couple of Al0.15Ga0.85As/Al0.9Ga0.1The centers As
Wavelength is that the semiconductor material layer of the quarter-wave thickness of 805nm is constituted, the upper optics in Fabry-Perot cavity 1
Optimization layer 5 by 100nm thickness Al0.9Ga0.1As materials constitute, lower optical optimization layer 6 by 85nm thickness Al0.15Ga0.5As material structures
At the reflectance spectrum of the optical filter of acquisition is as shown in Figure 4；Optical filter can be made in high reflectance distributed Blatt reflective
1 centre wavelength 850nm of mirror nearby has the reflection band of the wave-length coverage more than 40nm, and it includes the first antinode of short wavelength to have
The low light reflectivity more than 10nm including point wavelength 805nm composes area, can be realized simultaneously the transmission and reflection of light.
The material of optical filter substrate 7 is Al0.2Ga0.8As materials, incident material Al0.3Ga0.8As materials, high reflection
Rate distribution Bragg reflector 1 is by 28 couples of Al0.15Ga0.85As/Al0.9Ga0.1The semiconductor material layer of As quarter-wave thickness
Constitute, centre wavelength is located at 850nm, and the first antinodal point of short wavelength wavelength is located at 805nm, Fabry-Perot cavity 2 it is upper instead
Mirror 3 is penetrated by 1 couple of Al0.15Ga0.85As/Al0.9Ga0.1As centre wavelengths are the semi-conducting material of the quarter-wave thickness of 805nm
Layer is constituted, and the second speculum 4 of Fabry-Perot cavity 2 is by 1 couple of Al0.15Ga0.85As/Al0.9Ga0.1As centre wavelengths are
The semiconductor material layer of the quarter-wave thickness of 805nm is constituted, the upper optics optimization layer 5 of Fabry-Perot cavity 2 by
The Al of 100nm thickness0.9Ga0.1As materials constitute, lower optical optimization layer 6 by 85nm thickness Al0.15Ga0.5As materials are constituted, acquisition
The reflectance spectrum of optical filter is as shown in Figure 5；Equally it can make optical filter in high reflection ratio distribution Bragg reflective mirror 1
The long 850nm of cardiac wave nearby has the reflection band of the wave-length coverage more than 40nm, and has and include short wavelength's the first antinodal point wave
The low light reflectivity more than 10nm including long 805nm composes area, can be realized simultaneously the transmission and reflection of light.
The material of optical filter substrate 7 is Al0.2Ga0.8As materials, incident material Al0.3Ga0.8As materials, high reflection
Rate distribution Bragg reflector 1 is by 28 couples of Al0.15Ga0.85As/Al0.9Ga0.1The semiconductor material layer of As quarter-wave thickness
It constitutes, centre wavelength is located at 805nm, and long wave length direction is (following near the corresponding wavelength of first antinodal point of reflection band
The first antinodal point of abbreviation long wavelength wavelength) it is located at 850nm, the upper reflector 3 of Fabry Paro resonant cavity is by 2 pairs
Al0.15Ga0.85As/Al0.9Ga0.1As centre wavelengths are that the semiconductor material layer of the quarter-wave thickness of 850nm is constituted, method
Second speculum 4 of Fabry-Perot-type resonant cavity 2 is by 1 couple of Al0.15Ga0.85As/Al0.9Ga0.1As centre wavelengths are four points of 850nm
One of the semiconductor material layer of wavelength thickness constitute, the upper optics optimization layer 5 of Fabry-Perot cavity 2 is thick by 37nm
Al0.9Ga0.1As materials constitute, lower optical optimization layer 6 by 151nm thickness Al0.15Ga0.5As materials are constituted, the optically filtering of acquisition
The reflectance spectrum of device is as shown in Figure 6；Optical filter can be made in 1 centre wavelength 805nm of high reflection ratio distribution Bragg reflective mirror
Nearby there is the reflection band of the wave-length coverage more than 40nm, and with including comprising long wavelength's the first antinodal point wavelength 850nm
Low light reflectivity more than 10nm compose area, can be realized simultaneously the transmission and reflection of light.
Optical filter substrate 7 is Al0.3Ga0.7As materials, incident material are air, high reflectance distributed Blatt reflective
Mirror 1 is by 20 couples of Al0.15Ga0.85As/Al0.9Ga0.1The semiconductor material layer of As quarter-wave thickness is constituted, centre wavelength position
In 850nm, the first antinodal point of short wavelength wavelength is located at 805nm, and the upper reflector 3 of Fabry-Perot cavity 2 is by Air Interface
It is constituted with GaAs materials, the second speculum 4 of Fabry-Perot cavity 2 is by 2 couples of Al0.15Ga0.85As/Al0.9Ga0.1The centers As
Wavelength is that the semiconductor material layer of the quarter-wave thickness of 805nm is constituted, and the upper optics of Fabry-Perot cavity 2 is excellent
Change GaAs layer and 158nm thickness Al of the layer 5 by 5nm thickness0.9Ga0.1As layers of composition, lower optical optimization layer 6 is by 165nm thickness
Al0.15Ga0.5The Al of As layers and 114nm thickness0.9Ga0.1As layers of composition, the reflectance spectrum of the optical filter of acquisition are as shown in Figure 7；It can
So that optical filter has the wavelength more than 40nm near 1 centre wavelength 850nm of high reflection ratio distribution Bragg reflective mirror
The reflection band of range, and with include including short wavelength's the first antinodal point wavelength 805nm more than 10nm low light reflectivity spectrum
Area can be realized simultaneously the transmission and reflection of light.
Optical filter substrate 7 is Al0.3Ga0.7As materials, incident material are air, high reflectance distributed Blatt reflective
Mirror 1 is by 20 couples of Al0.15Ga0.85As/Al0.9Ga0.1The semiconductor material layer of As quarter-wave thickness is constituted, centre wavelength position
In 850nm, the first antinodal point of short wavelength wavelength is located at 805nm, and the upper reflector 3 of Fabry-Perot cavity 2 is by air circle
Face is constituted with GaAs materials, and the second speculum 4 of Fabry-Perot cavity 2 is by 3 couples of Al0.15Ga0.85As/Al0.9Ga0.1In As
The semiconductor material layer of the quarter-wave thickness of a length of 805nm of cardiac wave is constituted, the upper optics of Fabry-Perot cavity 2
Optimization layer 5 by 5nm thickness GaAs layers and 158nm thickness Al0.9Ga0.1As layers of composition, lower optical optimization layer 6 is by 165nm thickness
Al0.15Ga0.5The Al of As layers and 114nm thickness0.9Ga0.1As layers of composition, the reflectance spectrum of the optical filter of acquisition are as shown in Figure 8；It can
So that optical filter has the wavelength more than 40nm near 1 centre wavelength 850nm of high reflection ratio distribution Bragg reflective mirror
The reflection band of range, and with the low light reflectivity spectrum more than 10nm including short wavelength's the first antinodal point wavelength 805nm
Area can be realized simultaneously the transmission and reflection of light.
Optical filter substrate 7 is Al0.3Ga0.7As materials, incident material are air, high reflectance distributed Blatt reflective
Mirror 1 is by 20 couples of Al0.15Ga0.85As/Al0.9Ga0.1The semiconductor material layer of As quarter-wave thickness is constituted, centre wavelength position
In 805nm, the first antinodal point of long wavelength wavelength is located at 854nm, and the upper reflector 3 of Fabry-Perot cavity 2 is by Air Interface
It is constituted with GaAs materials, the second speculum 4 of Fabry-Perot cavity 2 is by 2 couples of Al0.15Ga0.85As/Al0.9Ga0.1The centers As
Wavelength is that the semiconductor material layer of the quarter-wave thickness of 850nm is constituted, and the upper optics of Fabry-Perot cavity 2 is excellent
Change GaAs layer and 233nm thickness Al of the layer 5 by 5nm thickness0.9Ga0.1As layers of composition, lower optical optimization layer 6 is by 40nm thickness
Al0.15Ga0.5The Al of As layers and 197nm thickness0.9Ga0.1As layers of composition, the reflectance spectrum of the optical filter of acquisition are as shown in Figure 9；It can
So that optical filter has the wavelength more than 40nm near 1 centre wavelength 805nm of high reflection ratio distribution Bragg reflective mirror
The reflection band of range, and with the low light reflectivity spectrum more than 10nm including long wavelength's the first antinodal point wavelength 854nm
Area can be realized simultaneously the transmission and reflection of light.
Optical filter substrate 7 is glass material, and incident material is air, high reflection ratio distribution Bragg reflective mirror 1 by
10 couples of SiO2/TiO2The medium membrane layers of quarter-wave thickness are constituted, and centre wavelength is located at 1550nm, and short wavelength first
Antinodal point wavelength is located at 1360nm, and the upper reflector 3 of Fabry-Perot cavity 2 is by the 1 a length of 1360nm's of centering cardiac wave
SiO2/TiO2The medium membrane layers of quarter-wave thickness are constituted, and the second speculum 4 of Fabry-Perot cavity 2 is by 2
The SiO of a length of 1360nm of centering cardiac wave2/TiO2The medium membrane layers of quarter-wave thickness are constituted, and Fabry-Perot is humorous
Shake chamber 2 upper optics optimization layer 5 by 5nm thickness TiO2Layer and 138nm thickness SiO2Layer is constituted, and lower optical optimization layer 6 is by 322nm thickness
TiO2The SiO of layer and 101nm thickness2Layer is constituted, and the reflectance spectrum of the optical filter of acquisition is as shown in Figure 10；Optics can be made to filter
Wave device has the reflection of the wave-length coverage more than 40nm near 1 centre wavelength 1550nm of high reflection ratio distribution Bragg reflective mirror
Band, and compose area, Ke Yitong with the low light reflectivity more than 10nm including short wavelength's the first antinodal point wavelength 1360nm
The transmission and reflection of Shi Shixian light.
Optical filter substrate 7 is glass material, and incident material is air, high reflection ratio distribution Bragg reflective mirror 1 by
10 couples of SiO2/TiO2The medium membrane layers of quarter-wave thickness are constituted, and centre wavelength is located at 1550nm, and short wavelength first
Antinodal point wavelength is located at 1360nm, and the upper reflector 3 of Fabry-Perot cavity 2 is by the 2 a length of 1360nm's of centering cardiac wave
SiO2/TiO2The medium membrane layers of quarter-wave thickness are constituted, and the second speculum of Fabry-Perot cavity 2 is by 2
The SiO of a length of 1360nm of centering cardiac wave2/TiO2The medium membrane layers of quarter-wave thickness are constituted, and Fabry-Perot is humorous
Shake chamber 2 upper optics optimization layer 5 by 5nm thickness TiO2Layer and 138nm thickness SiO2Layer is constituted, and lower optical optimization layer 6 is by 328nm thickness
TiO2The SiO of layer and 93nm thickness2Layer is constituted, and the reflectance spectrum of the optical filter of acquisition is as shown in figure 11；It can make optically filtering
Device has the reflection of the wave-length coverage more than 40nm near 1 centre wavelength 1550nm of high reflection ratio distribution Bragg reflective mirror
Band, and compose area, Ke Yitong with the low light reflectivity more than 10nm including short wavelength's the first antinodal point wavelength 1360nm
The transmission and reflection of Shi Shixian light.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features；
And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of optical filter, which is characterized in that including：
First speculum, and including at least the Fabry-Perot cavity of one second speculum, first speculum it is anti-
It penetrates rate and is more than the first preset value；The centre wavelength of second speculum is located in the reflectance spectrum of first speculum with default
Within the scope of the first preset wavelength centered on wavelength；
First speculum is arranged in the Fabry-Perot cavity, is set respectively in the both sides of first speculum
It is equipped with optical optimization layer, the optical optimization floor is for making the optical filter include the default wave in reflectance spectrum area
Reflectivity within the scope of the second long preset wavelength is less than the second preset value；
The preset wavelength is first antinode of the reflectance spectrum intermediate waves length direction near near reflex band of first speculum
First antinodal point pair of the long wave length direction near reflection band in the reflectance spectrum of the corresponding wavelength of point or first speculum
The wavelength answered.
2. optical filter according to claim 1, which is characterized in that first preset value is 90%, described second
Preset value is 10%.
3. optical filter according to claim 1, which is characterized in that first speculum is distributed Blatt reflective
Mirror.
4. optical filter according to claim 1, which is characterized in that the Fabry-Perot cavity further includes：The
Three speculums；
The third speculum is distribution Bragg reflector or the third speculum by setting material and Air Interface shape
At.
5. optical filter according to claim 1, which is characterized in that the material and thickness of the optical optimization layer according to
It needs to be configured, so that the optical filter includes the second preset wavelength model of the preset wavelength in reflectance spectrum area
Reflectivity in enclosing is less than the second preset value.
6. optical filter according to claim 1, which is characterized in that the number of plies of the optical optimization layer is 1-3 layers.
7. optical filter according to claim 1, which is characterized in that including：First preset wavelength is ranging from
The wave-length coverage of 40nm.
8. optical filter according to claim 1, which is characterized in that including：The second preset wavelength range is at least
For the wave-length coverage of 10nm.
9. according to the optical filter described in any one of claim 1-8, which is characterized in that the optical filter also wraps
It includes：Optical filter substrate；
Second speculum is arranged on the optical filter substrate.
10. optical filter according to claim 9, which is characterized in that the material of the optical filter is deielectric-coating
Material or semi-conducting material, or the material that is collectively formed by semi-conducting material and medium membrane material.
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| CN111308599A (en) * | 2020-04-22 | 2020-06-19 | 杭州科汀光学技术有限公司 | Ultra-narrow band filter with high optical stability and preparation method thereof |
| CN113376748A (en) * | 2021-06-17 | 2021-09-10 | 中国科学院半导体研究所 | Composite wave-splitting device of integrated silicon-based Bragg reflector and preparation method thereof |
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| CN108535801B (en) | 2019-11-22 |
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