CN102914834A - Optical device - Google Patents
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- CN102914834A CN102914834A CN2012101679561A CN201210167956A CN102914834A CN 102914834 A CN102914834 A CN 102914834A CN 2012101679561 A CN2012101679561 A CN 2012101679561A CN 201210167956 A CN201210167956 A CN 201210167956A CN 102914834 A CN102914834 A CN 102914834A
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Abstract
The invention provides an optical device comprising an optical fiber splice and a photoelectric conversion device. The photoelectric conversion device comprises a photodiode and a waveguide layer; the waveguide layer is used for receiving an optical signal transmitted by the optical fiber splice and transmits the optical signal to the photodiode; the photodiode is used for converting the received optical signal to an electric signal; the waveguide layer is provided with an incidence plane and an emergent plane; the optical signal transmitted by the optical fiber splice enters to the waveguide layer through the incidence plane, and departs from the waveguide layer to the photodiode through the emergent plane; the emergent plane of the waveguide layer is parallel with an incidence plane of the photodiode; an included angle between the incidence plane of the waveguide layer and the incidence plane of the photodiode is smaller than 90 degrees to shorten the route length required by the optical signal transmitting into the photodiode through the waveguide layer. According to the optical device provided by the embodiment of the invention, the waveguide layer is shorter under the condition that the requirement on light absorbing efficiency is met, so that the entire optical device is small in size and low in production cost.
Description
Technical field
The embodiment of the invention relates to optical communication technique, relates in particular to a kind of Waveguide mode optical device.
Background technology
Photo-detector is in the optical communication, be used for light signal is converted to the crucial optical devices of electric signal, wherein, bandwidth and efficient are the basic parameters of photo-detector, directly determining speed and the responsiveness of optical communication, and bandwidth and efficient are all relevant with the thickness of light absorbing zone in the photo-detector, the thickness of light absorbing zone is thicker, efficient is just higher, but bandwidth is just less, therefore, in high speed optical communication, for example surpass in the optical communication of 40GHz, when satisfying the photo-detector bandwidth, the efficiency of light absorption that how to improve photo-detector then becomes very crucial.
For tradition just adopt according to or the photo-detector of the PIN type of back of the body photograph in, the light directly P type doping semiconductor layer from the photodiode of PIN structure (hereinafter to be referred as P type layer) or N-type doping semiconductor layer (hereinafter to be referred as the N-type layer) is injected, if improve the efficient of photo-detector, just need to increase light absorbing zone, be the thickness of I type intrinsic semiconductor layer (hereinafter to be referred as I type layer), the increase of light absorbing zone thickness then can reduce the bandwidth of photo-detector, in high speed optical communication, can't satisfy simultaneously the needs of bandwidth and efficient.Prior art has proposed Waveguide optical detector for this reason, it is limit incident light detector, by increasing ducting layer, but so that progress into light absorbing zone in the communication process of incident light ducting layer, also can have preferably efficiency of light absorption to have at light absorbing zone in the thinner size situation.
The structural representation of the Waveguide optical detector that Fig. 1 provides for prior art.As shown in Figure 1, existing Waveguide optical detector comprises substrate 101, and the ducting layer 102 that sets gradually at substrate 101, N-type layer 103, I type layer 104 and P type layer 105, optical axis glancing incidence along ducting layer enters ducting layer 102 to light signal A from the side of ducting layer 102, in ducting layer 102 communication processes, light signal A can enter into I type layer 104 by N-type layer 103 gradually, wherein, N-type layer 103 is the N-type ohmic contact layer, P type layer 105 is P type ohmic contact layer, the effect of N-type layer 103 and P type layer 105 is to realize that electricity injects, and I type layer 104 is exactly light absorbing zone, can carry out to the light signal that enters opto-electronic conversion; Simultaneously, N-type layer 103 also plays the optical match effect, so that the light of propagating in ducting layer 102 can progress into from N-type layer surface I type layer 104.In this kind structure, light is in ducting layer 103 communication processes, so that light signal A can be absorbed by I type layer 104 gradually by N-type layer 103, thereby can be under the prerequisite that does not increase light I type layer 104 thickness, improve the absorption efficiency of light absorbing zone, but, in this kind optical detector, for improving the efficiency of light absorption of light absorbing zone, guarantee that light is absorbed by light absorbing zone in ducting layer is propagated, it is very thin that ducting layer is done usually, and the length of ducting layer is also very long, so that the photo-detector overall dimensions is larger, and during with coupling fiber, also need to be at the input end integrated modular spot converter of detector.
To sum up, in the existing Waveguide optical detector, be to improve efficiency of light absorption, ducting layer length longer is so that the size of whole detector chip is larger.
Summary of the invention
The embodiment of the invention provides a kind of photo-detector and optical devices, and it is long and cause the larger problem of detector volume to overcome in the existing Waveguide optical detector ducting layer.
The embodiment of the invention provides a kind of optical devices, comprise fibre-optical splice and electrooptical device, described fibre-optical splice is used for receiving optical signals and launches described light signal to described electrooptical device, described electrooptical device is used for receiving described light signal, and described light signal is converted to electric signal, wherein
Described electrooptical device comprises photodiode and ducting layer, described ducting layer is used for receiving the light signal of described fibre-optical splice emission, and with described optical signal transmission to the described photodiode, described photodiode is used for the light signal that receives is converted to electric signal, described ducting layer is provided with the plane of incidence and exit facet, wherein, the light signal of described fibre-optical splice emission enters described ducting layer by the described plane of incidence, and leave the described photodiode of described ducting layer directive by described exit facet, the exit facet of described ducting layer is parallel with the plane of incidence of described photodiode, angle between the plane of incidence of described ducting layer and the plane of incidence of described photodiode is injected described photodiode needed path to shorten described light signal by described ducting layer less than 90 degree.
The optical devices that the embodiment of the invention provides, by the light entrance face of light waveguide-layer is arranged to the dip plane, so that after the light entrance face of light vertical waveguide layer enters ducting layer, part light does not rely on the propagation of ducting layer just directly to enter into photodiode, the propagation that part light then relies in the ducting layer progressively enters into photodiode, thereby so that having short travel path in ducting layer, incident light just can be absorbed by the light absorbing zone of photodiode, directly enter for the photodiode of ducting layer along the ducting layer optical axis with respect to existing light, can effectively reduce the length of ducting layer, and then can reduce the size of optical devices, reduce manufacture craft and the manufacturing cost of optical devices.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do one to the accompanying drawing of required use in embodiment or the description of the Prior Art and introduce simply, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of the Waveguide optical detector that Fig. 1 provides for prior art;
The structural representation of a kind of electrooptical device of providing in the embodiment of the invention is provided Fig. 2;
Fig. 3 A is the efficiency of light absorption synoptic diagram of electrooptical device when ducting layer thickness is 2um in the electrooptical device shown in Figure 1;
Fig. 3 B is the efficiency of light absorption synoptic diagram of electrooptical device when ducting layer thickness is 2um in the embodiment of the invention;
The structural representation of the another kind of electrooptical device that provides in the embodiment of the invention is provided Fig. 4;
The structural representation of another electrooptical device of providing in the embodiment of the invention is provided Fig. 5;
The structural representation of another electrooptical device of providing in the embodiment of the invention is provided Fig. 6;
The structural representation of a kind of optical devices that Fig. 7 provides for the embodiment of the invention;
The structural representation of the another kind of optical devices that Fig. 8 provides for the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work belongs to the scope of protection of the invention.
Carry out in the photo-detector of waveguide in view of existing, the problem that ducting layer is thin and long, the embodiment of the invention provides a kind of optical devices, comprise fibre-optical splice and electrooptical device, fibre-optical splice is for receiving optical signals and to electrooptical device utilizing emitted light signal, electrooptical device is used for receiving optical signals, and light signal is converted to electric signal.Wherein, electrooptical device comprises photodiode and ducting layer, and ducting layer be used for to receive the light signal of fibre-optical splice emission, and with optical signal transmission to photodiode; Photodiode can be converted to electric signal with the light signal that receives; Be provided with the plane of incidence and exit facet on the ducting layer, the light signal of fibre-optical splice emission enters ducting layer by the plane of incidence, and leave ducting layer and the directive photodiode by exit facet, the exit facet of ducting layer is parallel with the plane of incidence of photodiode, angle between the plane of incidence of ducting layer and the plane of incidence of photodiode is less than 90 degree, the plane of incidence that is ducting layer is the dip plane, thereby can shorten light signal and inject the required path of photodiode by ducting layer, reduce the transmission range of light signal in ducting layer, reduce the length of ducting layer.The optical devices that the embodiment of the invention provides, can be with light along the intersection point place vertical light plane of incidence of the optical centre axle of ducting layer and light entrance face and enter ducting layer, like this, enter ducting layer in incident light, a part can be in the junction of ducting layer and photodiode, enter into photodiode by refraction, another part, can be along in the ducting layer communication process, progress into the plane of incidence of photodiode, thereby can effectively reduce the travel-time of light in ducting layer, and then reduce the length of ducting layer, can effectively reduce the size of optical devices.
At first the electrooptical device of the photodiode that utilizes the PIN structure in the embodiment of the invention described.
The structural representation of a kind of electrooptical device of providing in the embodiment of the invention is provided Fig. 2.As shown in Figure 2, the present embodiment electrooptical device comprises: photodiode 1, the first substrate 2 and ducting layer 3, and wherein, photodiode 1 is the photodiode of PIN type, is arranged on the first substrate 2; Ducting layer 3 is arranged between photodiode 1 and the first substrate 2, the plane of incidence of ducting layer 3 is dip plane a, be angle between the plane of incidence of the plane of incidence of ducting layer 3 and photodiode 1 less than 90 degree, vertically this dip plane a enters the radiation direction of incident light B of ducting layer 3 towards the light entrance face b of photodiode 1.
In the present embodiment, as shown in Figure 2, photodiode 1 is the PIN structure that comprises P type layer 11, I type layer 12 and N-type layer 13, wherein, P type layer 11, I type layer 12 and N-type layer 13 are cascading on the first substrate 2, and N-type layer 13 is the light incident layer of electrooptical device 1; Ducting layer 3 is arranged between N-type layer 13 and the first substrate 2, and the optical index of N-type layer 13 is greater than the optical index of ducting layer 3, can be in the at the interface generation total reflection of N-type layer 13 and ducting layer 3 so that enter the incident light B of ducting layer 3, more light can enter in the photodiode 1 by refraction.
It will be appreciated by those skilled in the art that, common photodiode is the PN junction type photodiode that P type layer and N-type layer consist of, its principle is the photoelectric effect of PN junction, when incident light is injected PN junction, because the electron-hole pair that light absorption process can produce motion, from the formation photogenerated current that is in closed circuit, realize that light signal is converted to electric signal.The PIN junction photodiode is improved structure, after adding the I type in the middle of P type layer and the N-type layer, can control the width of depletion layer, improves the response speed of opto-electronic conversion.
In the present embodiment, P type layer 11, I type layer 12, N-type layer 13 and ducting layer 3 are to be made by epitaxy technique, namely form by the epitaxy technique growth on the first substrate 2, and particularly, P type layer 11 can be InGaAsP (In
X1Ga
1-x1As
Y1P
1-y1) material makes, I type layer 12 can be indium gallium arsenic (In
X2Ga
1-x2As) material is made, and N-type layer 13 can be InGaAsP (In
X3Ga
1-x3As
Y3P
1-y3) material makes, and x1, y1 in each materials chemistry formula, x2, y2, x3, y3 can change between 0 ~ 1; The shape of each layer structure, size can adopt non-selective corrosion to be combined the method for (being heterojunction boundary) with selective corrosion, obtain by dry etching or wet etching; And the light entrance face of ducting layer 3 can adopt the method for directed etching, and for example directed dry etching or the phosphoric acid commonly used of falling from power, hcl corrosion obtain; The light entrance face of ducting layer 3 can be by the methods such as electron beam evaporation or magnetron sputtering plating one deck medium anti-reflective films, reduce or avoid incident light in the reflection of light entrance face, improve the ratio that incident light enters ducting layer; The first substrate 2 is specifically as follows the substrate of indium phosphide Inp material, and the optical index of this first substrate 2 is less than the refractive index of ducting layer 3.The present embodiment detector is a kind of semiconductor devices, and its concrete manufacture craft can be with reference to the known semiconductor manufacture craft.
In the present embodiment, as shown in Figure 2, the light entrance face a of ducting layer 3 and the light entrance face b(of photodiode 1 are the border between N-type layer 13 and the ducting layer 3) angle theta that forms can be 75 degree-85 degree, present embodiment preferably θ is 82 degree, like this, the light signal of coming from fibre-optical splice is along the optical centre axle of ducting layer 3 and the intersection point of light entrance face, when the vertical light plane of incidence enters ducting layer, and the angle between the optical centre axle is 8 degree.After electrooptical device in the present embodiment and the fibre-optical splice coupling, light signal in the optical fiber, be that incident light B is from the intersection point of the optical centre axle c of light entrance face a and ducting layer 3, after vertical light plane of incidence a enters ducting layer 3, part light can enter into by the N-type layer 13 with high index I type layer 12, another part light can be by in ducting layer 3 in the communication process, enter into I type layer 12 from N-type layer 13 gradually again, since an incident light B part do not rely on light in ducting layer 3 propagation and directly enter into I type layer 12, so that the light of propagating in ducting layer 3 is less, then the length of ducting layer 3 just can reduce accordingly, for the ducting layer of prior art same thickness shown in Figure 1, the length of the ducting layer in the present embodiment photo-detector will reduce a lot.In the present embodiment, be set to 82 degree by angle theta, so that the incident light B that directly injects ducting layer directly is completely absorbed by I type layer substantially by the luminous energy that N-type layer 13 enters into I type layer 12, thereby can improve efficiency of light absorption.
It will be appreciated by those skilled in the art that, according to actual needs, the light entrance face of photodiode for example, be the difference of the refractive index between N-type layer and the ducting layer, the dip plane that the light entrance face of formation ducting layer can have proper angle, after directly entering I type layer by the N-type layer with the light of the ducting layer guaranteeing to enter, can be fully or most ofly absorbed by I type layer.
Fig. 3 A is the efficiency of light absorption synoptic diagram of electrooptical device when ducting layer thickness is 2um in the electrooptical device shown in Figure 1; Fig. 3 B is the efficiency of light absorption synoptic diagram of electrooptical device when ducting layer thickness is 2um in the embodiment of the invention.Among Fig. 3 A and Fig. 3 B, horizontal ordinate represents is the ratio of luminous power and incident optical power in the electrooptical device, what ordinate represented is the length of ducting layer, when the incident light when 80% is absorbed, B1 position as shown in Fig. 3 A and the B2 position as shown in Fig. 3 B, the length of ducting layer is 50um in the prior art electrooptical device (being photo-detector), and the length of ducting layer only needs 20um in the electrooptical device that the embodiment of the invention provides, can find out, under same thickness, the photo-detector of relative existing structure, the length of ducting layer can reduce much in the present embodiment electrooptical device, thereby can effectively reduce the size of electrooptical device and optical devices.
In the practical application, for ease of to electrooptical device and fibre-optical splice direct-coupling, also can be by increasing the thickness of ducting layer, and the length of proper extension ducting layer, like this, electrooptical device just can be directly and the fibre-optical splice coupling, show by calculating, when adopting length to be similarly the ducting layer of 50um, the thickness that the existing as shown in Figure 1 efficiency of light absorption of the photo-detector of structure reaches 80% ducting layer is 2um, and adopts the structure of present embodiment electrooptical device, and the thickness of ducting layer can reach 6um when absorptivity reached 80%, the ducting layer of this thickness can be directly and the fibre-optical splice coupling, and do not need to arrange in addition spot-size converter.
The structural representation of the another kind of electrooptical device that provides in the embodiment of the invention is provided Fig. 4.Different from above-mentioned electrooptical device shown in Figure 2 is, the first substrate 2 in the present embodiment can comprise substrate 21 and lower substrate 22, it is consistent with the shape of ducting layer 3 wherein to go up substrate 21, namely go up and have the dip plane that has the same tilt angle with the light entrance face of ducting layer 3 on the substrate 21, so that the end face of upper substrate 21 and the light entrance face coplanar of ducting layer 3, like this, when forming the light entrance face of ducting layer 3, can form the consistent dip plane of shape with upper substrate 21 at ducting layer 3, simplify the manufacture craft of the light entrance face of ducting layer 3, improve the precision of the light entrance face of the ducting layer 3 that forms.
In the present embodiment electrooptical device manufacturing process, after being grown on the first substrate 2 by epitaxy technique the photodiode 1 of ducting layer 3 and PIN structure, can on upper substrate 21 and ducting layer 3, obtain the dip plane of ducting layer 3 and upper substrate 21 by directed lithographic method, but the making precision of light entrance face on the Effective Raise ducting layer 3.
The structural representation of another electrooptical device of providing in the embodiment of the invention is provided Fig. 5.Different from above-mentioned electrooptical device shown in Figure 2 is, the photodiode 1 of PIN structure is arranged on the second substrate 4 in the present embodiment, ducting layer 3 be arranged on the photodiode 1 with the not contacted surface of the second substrate 4 on.In the present embodiment, the second substrate 4 can be the material not identical with the first substrate, and for example metal material is made.
In the electrooptical device in the present embodiment, after the photodiode 1 of PIN structure and ducting layer 3 can complete at the first substrate 1 as shown in Figure 2, be arranged on the second substrate 4 by inverted mode again, and the second substrate 4 can be the substrate that metal material is made.Particularly, the P type layer in the photodiode 1, I type layer, N-type layer, and ducting layer 3 these epitaxial structures can be at the InP Grown, and after moulding, after peeling off from the InP substrate, upside-down mounting is on the substrate that metal material is made.
The structural representation of another electrooptical device of providing in the embodiment of the invention is provided Fig. 6.Different from above-mentioned Fig. 2-electrooptical device shown in Figure 4 is, can between the light entrance face of ducting layer and photodiode, can be provided with the optical match layer in the present embodiment, and the optical index of this optical match layer is greater than the optical index of ducting layer, optical index less than the light entrance face of photodiode, thereby can utilize the optical match layer of independent setting, to enter photodiode from the anaclasis that ducting layer is propagated, particularly, as shown in Figure 6, between N-type layer 13 and ducting layer 3, be provided with optical match layer 5, the optical index of this optical match layer 5 is greater than the optical index of ducting layer 3, optical index less than N-type layer 13, can at ducting layer 3 and optical match layer 5 intersection, propagate into photodiode 1 by optical match layer 5 so that enter the light B of ducting layer.
It will be understood by those skilled in the art that this optical match layer can be the single layer structure that optical material with certain refractive index is made, and can for making sandwich construction by the different refractivity material, not be particularly limited this in the present embodiment yet.
It will be understood by those skilled in the art that on above-mentioned electrooptical device shown in Figure 5 basis also can increase by an optical match layer between N-type layer and ducting layer, concrete structure and above-mentioned Fig. 6 are similar, do not repeat them here.
It will be appreciated by those skilled in the art that, N-type layer among above-mentioned Fig. 2-Fig. 5 is in fact in the electric function of injecting that possesses PIN structure N-type layer, the function that also has the optical match layer, the light that propagates into ducting layer and optical match layer intersection in can ducting layer propagates into I type layer in the PIN structure by refraction.
It will be understood by those skilled in the art that in the photodiode of above-mentioned PIN structure, if with P type layer as light entrance face, can have the similar structure of above-mentioned Fig. 2-Fig. 6, repeat no more.
It will be appreciated by those skilled in the art that, above-mentioned photodiode is except can being the photodiode of PIN structure of Fig. 2-shown in Figure 5, the also photodiode of other types, for example PN junction structure, quantum well structure and based on the photodiode of silicon Si material, by the light entrance face of ducting layer being arranged to the dip plane of certain angle, can effectively reduce the length of ducting layer, can guarantee simultaneously the efficiency of light absorption of electrooptical device, so that electrooptical device when satisfying the bandwidth needs, has preferably efficiency of light absorption.
The structural representation of a kind of optical devices that Fig. 7 provides for the embodiment of the invention.The present embodiment optical devices can come Optical Fiber Transmission to such an extent that fiber-optic signal is converted to electric signal, and particularly, as shown in Figure 7, the present embodiment optical devices comprise electrooptical device 10, and the fibre-optical splice 20 that docks with electrooptical device 10; The light-emitting face d of fibre-optical splice 20 is the dip plane, and is relative with the light entrance face a of ducting layer 3 in the electrooptical device 10, makes the emergent light of fibre-optical splice 20 perpendicular to the light entrance face a ejaculation of ducting layer 3 in the electrooptical device 10.
In the present embodiment, as shown in Figure 7, photo-detector 10 is for adopting above-mentioned electrooptical device shown in Figure 4, wherein fibre-optical splice 20 is arranged on the lower substrate 22 of electrooptical device 10, and the emergent light of fibre-optical splice 20 is injected electrooptical device 10 from the intersection point s of the optical centre axle c of the light entrance face a of ducting layer 3 and ducting layer 3, thereby can guarantee that the light signal that transmits in the optical fiber can all be injected in the electrooptical device 10.
It will be appreciated by those skilled in the art that, for so that the emergent light of fibre-optical splice 20 can be injected electrooptical device 10 from intersection point s, in the practical application, can be by increasing the thickness of ducting layer 3, perhaps by increasing the thickness of the first substrate, so that fibre-optical splice 20 when directly being placed on lower substrate 22, can guarantee that the emergent light of fibre-optical splice 20 can be injected electrooptical device 10 from intersection point s; In addition, if fibre-optical splice 20 diameters are less, also can adjust the relative position of 10 of fibre-optical splice 20 and electrooptical devices by between fibre-optical splice 20 and the first substrate, pedestal being set, can inject photo-detector 10 from intersection point s with the emergent light of guaranteeing fibre-optical splice 20.
The optical devices that the embodiment of the invention provides, by the light entrance face of light waveguide-layer is arranged to the dip plane, so that after the light entrance face of light vertical waveguide layer enters ducting layer, part light does not rely on the propagation of ducting layer just directly to enter into photodiode, the propagation that part light then relies in the ducting layer progressively enters into photodiode, thereby so that having short travel path in ducting layer, incident light just can be absorbed by the light absorbing zone of photodiode, directly enter for the photodiode of ducting layer along the ducting layer optical axis with respect to existing light, can effectively reduce the length of ducting layer, and then can reduce the size of optical devices, reduce manufacture craft and the manufacturing cost of optical devices.
It will be understood by those skilled in the art that above-mentioned Fig. 2 or electrooptical device shown in Figure 3, can be applicable to equally in the above-mentioned optical devices that its specific implementation is identical with technical scheme embodiment illustrated in fig. 7 or similar.
The structural representation of the another kind of optical devices that Fig. 8 provides for the embodiment of the invention.Different from above-mentioned technical scheme embodiment illustrated in fig. 7 is, fibre-optical splice 20 and electrooptical device 10 can be arranged on the pedestal 30 in the present embodiment, like this, can adjust as required pedestal 30 height, so that the emergent light of fibre-optical splice 20 can be injected photo-detector 10 from the intersection point s of the optical centre axle c of the light entrance face a of ducting layer 3 and ducting layer 3.
As shown in Figure 8, said base 30 specifically can comprise the first pedestal 301 and the second pedestal 302, fibre-optical splice 20 is arranged on the first pedestal 301, electrooptical device 10 is arranged on the second pedestal 302, and the height of the first pedestal 301 is lower than the height of the second pedestal 302, so that the emergent light of fibre-optical splice 20 can be injected electrooptical device 10 from intersection point s.In the practical application, can adjust as required the height of the first pedestal and the second pedestal, for example, height according to photo-detector, and the height of fibre-optical splice, the first pedestal setting is below or above the mode of the second pedestal, guarantees to inject electrooptical device 10 from the light entrance face of electrooptical device ducting layer and the intersection point s of optical centre axle from the emergent light that fibre-optical splice sends.
By pedestal is set separately, can degree of being convenient to fibre-optical splice and coupling, the encapsulation of electrooptical device, improve encapsulation precision and convenience.
It will be understood by those skilled in the art that above-mentioned fibre-optical splice can be the joint that is connected with optical fiber of independent setting, or the fibre-optical splice on the optical fiber, this present embodiment is not limited.
It should be noted that at last: above each embodiment is not intended to limit only in order to technical scheme of the present invention to be described; Although with reference to aforementioned each embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps some or all of technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the scope of various embodiments of the present invention technical scheme.
Claims (11)
1. optical devices, it is characterized in that, comprise fibre-optical splice and electrooptical device, described fibre-optical splice is used for receiving optical signals and launches described light signal to described electrooptical device, described electrooptical device is used for receiving described light signal, and described light signal is converted to electric signal, wherein
Described electrooptical device comprises photodiode and ducting layer, described ducting layer is used for receiving the light signal of described fibre-optical splice emission, and with described optical signal transmission to the described photodiode, described photodiode is used for the light signal that receives is converted to electric signal, described ducting layer is provided with the plane of incidence and exit facet, wherein, the light signal of described fibre-optical splice emission enters described ducting layer by the described plane of incidence, and leave the described photodiode of described ducting layer directive by described exit facet, the exit facet of described ducting layer is parallel with the plane of incidence of described photodiode, angle between the plane of incidence of described ducting layer and the plane of incidence of described photodiode is injected described photodiode needed path to shorten described light signal by described ducting layer less than 90 degree.
2. optical devices according to claim 1 is characterized in that, described photodiode is the photodiode of PIN structure, comprise P type doping semiconductor layer, I type intrinsic semiconductor layer and the N-type doping semiconductor layer of stacked setting;
The light entrance face of described photodiode is P type doping semiconductor layer or N-type doping semiconductor layer.
3. optical devices according to claim 1 and 2 is characterized in that, described photodiode is arranged on the first substrate, and described ducting layer is arranged between described the first substrate and the described photodiode;
The optical index of described the first substrate is less than the refractive index of described ducting layer.
4. optical devices according to claim 3 is characterized in that, described the first substrate comprises substrate and lower substrate;
Described upper substrate is consistent with the shape of described ducting layer.
5. optical devices according to claim 1 and 2 is characterized in that, described photodiode is arranged on the second substrate;
Described ducting layer is arranged on the described photodiode and the not contacted surface of described the second substrate.
6. optical devices according to claim 1 and 2 is characterized in that, are provided with the optical match layer between the light entrance face of described ducting layer and photodiode;
The optical index of described optical match layer is greater than the optical index of described ducting layer, less than the optical index of the light entrance face of described photodiode.
7. optical devices according to claim 1 and 2 is characterized in that, forming angle between the light entrance face of described ducting layer and the light entrance face of described photodiode is 75 degree-85 degree.
8. optical devices according to claim 7 is characterized in that, the angle that forms between the light entrance face of described ducting layer and the light entrance face of described electrooptical device is 82 degree.
9. optical devices according to claim 1, it is characterized in that, the light-emitting face of described fibre-optical splice is the dip plane, and is relative with the light entrance face of ducting layer in the described photo-detector, makes the emergent light of described fibre-optical splice perpendicular to the light entrance face ejaculation of ducting layer in the described photo-detector.
10. optical devices according to claim 9 is characterized in that, described fibre-optical splice and described electrooptical device are arranged on the pedestal.
11. optical devices according to claim 10 is characterized in that, described pedestal comprises the first pedestal and the second pedestal;
Described fibre-optical splice is arranged on described the first pedestal, described electrooptical device is arranged on described the second pedestal, and the height of described the first pedestal is lower than the height of described the second pedestal, and the emergent light that makes described fibre-optical splice is injected described electrooptical device from the intersection point of the optical centre axle of the light entrance face of described ducting layer and ducting layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106062970A (en) * | 2013-03-11 | 2016-10-26 | 英特尔公司 | Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits |
| US10795080B1 (en) | 2019-04-04 | 2020-10-06 | Lumentum Operations Llc | Optical receiver with photodiode disposed directly on a planar lightwave circuit |
| WO2020199352A1 (en) * | 2019-04-04 | 2020-10-08 | Lumentum Operations Llc | Optical receiver with photodiode disposed directly on a planar lightwave circuit |
| CN112615250A (en) * | 2021-01-06 | 2021-04-06 | 厦门市三安集成电路有限公司 | Photoelectric diode |
| WO2022215275A1 (en) * | 2021-04-09 | 2022-10-13 | 日本電信電話株式会社 | Light-receiving element |
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| CN1141511A (en) * | 1995-05-12 | 1997-01-29 | 富士通株式会社 | Integrated optical module including waveguide and photoreception device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106062970A (en) * | 2013-03-11 | 2016-10-26 | 英特尔公司 | Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits |
| CN106062970B (en) * | 2013-03-11 | 2018-05-08 | 英特尔公司 | The low-voltage avalanche photodide with re-entrant angle mirror for silicon-based photonics integration circuit |
| US10795080B1 (en) | 2019-04-04 | 2020-10-06 | Lumentum Operations Llc | Optical receiver with photodiode disposed directly on a planar lightwave circuit |
| WO2020199352A1 (en) * | 2019-04-04 | 2020-10-08 | Lumentum Operations Llc | Optical receiver with photodiode disposed directly on a planar lightwave circuit |
| CN112615250A (en) * | 2021-01-06 | 2021-04-06 | 厦门市三安集成电路有限公司 | Photoelectric diode |
| WO2022215275A1 (en) * | 2021-04-09 | 2022-10-13 | 日本電信電話株式会社 | Light-receiving element |
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