CN108899388A - A kind of silicon substrate graphene photodetector - Google Patents
A kind of silicon substrate graphene photodetector Download PDFInfo
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- CN108899388A CN108899388A CN201810701611.7A CN201810701611A CN108899388A CN 108899388 A CN108899388 A CN 108899388A CN 201810701611 A CN201810701611 A CN 201810701611A CN 108899388 A CN108899388 A CN 108899388A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000004043 responsiveness Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- 230000003993 interaction Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 150000001336 alkenes Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of silicon substrate graphene photodetectors, including silicon waveguide, pad oxide layer, oxide covering and graphene, it further include the sub-wavelength metal electrode that symmetrically placed the first metal electrode and the second metal electrode are constituted, the sub-wavelength metal electrode is using two different metal cross arrangements above silicon waveguide.The present invention is contacted by two different metals with graphene, and the doping of various concentration or type is generated, to introduce potential difference between sub-wavelength metal electrode, driving photo-generated carrier is flowed to two electrodes；The present invention passes through the cross arrangement structure of electrode, plays the contact area for increasing electrode and graphene, improves the absorption efficiency of carrier；The present invention is by being fitted in sub-wavelength metal electrode top for graphene, sub-wavelength metal electrode carries out light field regulation to horizontal magnetic (TM) mould transmitted in silicon waveguide, increase the electric field component being parallel on graphene direction, it interacts to enhance light field and graphene, improves the responsiveness of detector.
Description
Technical field
The invention belongs to optical fields, more particularly, to a kind of silicon substrate graphene photodetector.
Background technique
Compared to traditional optical platform, silicon based photon has numerous advantages, for example, it is low in energy consumption, with roomy, size is small,
It is compatible with conventional microelectronic production technology (i.e. CMOS technology) etc., it has developed into the next-generation high speed optical communication of solution and light is mutual
Important subject even.Photodetector receives extensive concern and the research of people as the basic device on silicon optical bench.Often
The on piece detector seen includes iii-v detector and germanium (Ge) detector, but iii-v detector and traditional CMOS work
Skill is incompatible to cause its cost of manufacture higher, and Ge detector, due to the defect of itself electrical properties, bandwidth is difficult to surmount
100GHz.In recent years, the appearance of new material was that the development of detector brings new opportunities.Wherein, graphene is as a kind of allusion quotation
The two-dimensional material of type possesses many excellent photoelectric properties, can research and develop as photodetector on New card.
High speed graphene detector most reported that theory shows the carrier mobility due to its superelevation, stone earlier than 2009
The bandwidth of black alkene detector is expected to more than 500GHz.But initial graphene detector is the structure based on vertical incidence, light
Field only contacts once with graphene, and the interaction of light field and graphene is weaker, so as to cause the responsiveness of such detector
It is lower.In order to enhance the interaction of light field and graphene, people combine graphene with waveguide, utilize the evanscent field of waveguide
The contact of long range is formd with graphene, to enhance the interaction of light field and graphene, its responsiveness can be mentioned
High 1~2 order of magnitude.In order to further enhance the interaction of light field and graphene, people also carry out the structure of silicon waveguide
New exploration, including the structure of the structure resonant cavity formula of metal auxiliary type, but the former can introduce additional light loss
Consumption, the latter will cause resonance effect, both can have an adverse effect to the performance of detector.
Summary of the invention
In view of the drawbacks of the prior art, it is an object of the invention to solve common silica-based waveguides due to light field and graphene phase
Interaction is limited and leads to that detector responsivity is lower, large-sized structure leads to that detector bandwidth is limited, common metal auxiliary
Type structure introduces the technical issues of high additional optical loss.
To achieve the above object, the embodiment of the invention provides a kind of silicon substrate graphene photodetector, including silicon waveguide,
Pad oxide layer, oxide covering and graphene,
The photodetector further includes symmetrically placed the first metal electrode and the second metal electrode, and two electrodes are adopted
With second wavelength metallic structure, sub-wavelength metal electrode is together constituted,
The sub-wavelength metal electrode is using two different metal cross arrangements above silicon waveguide.
Specifically, arrangement period≤200nm of the sub-wavelength metal electrode structure.
Specifically, the graphene fits in the upper surface of the sub-wavelength metal electrode.
Specifically, the length and width of the photodetector is micron level.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit：
(1) present invention is contacted by two different metals with graphene, generates various concentration or type to graphene
Doping, to introduce potential difference between sub-wavelength metal electrode, driving photo-generated carrier is flowed to two electrodes.
(2) present invention passes through the cross arrangement structure of electrode, the contact area for increasing electrode and graphene is played, to mention
The absorption efficiency of high carrier.
(3) present invention is by being fitted in sub-wavelength metal electrode top for graphene, and sub-wavelength metal electrode is to silicon wave
The TM mould for leading middle transmission carries out light field regulation, increases the electric field component being parallel on graphene direction, to enhance light field and stone
Black alkene interaction, improves the responsiveness of detector.
(4) characteristic of the invention by sub-wavelength structure, so that electric field energy is concentrated mainly between metal and metal
In gap, the contact excessive with metal is avoided, to reduce the light loss of metal.
(5) present invention takes metal auxiliary type silicon waveguide, resonance effect is avoided, to realize broadband response；Pass through
The length and width control of detector is other in the micron-scale, so that the size of entire detector is smaller, to ensure that its bandwidth is larger.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of ordinary silicon base graphene photodetector in the prior art.
Fig. 2 is the structural schematic diagram of silicon substrate graphene photodetector provided in an embodiment of the present invention.
Fig. 3 is ordinary silicon base graphene photodetector and silicon substrate graphene photodetector electric field provided by the invention point
The comparison diagram of amount.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 is the structural schematic diagram of ordinary silicon base graphene photodetector in the prior art.As shown in Figure 1, ordinary silicon
Base graphene photodetector includes silicon waveguide 1, pad oxide layer 2, oxide covering 3, the first metal electrode 4, the second gold medal
Belong to electrode 5 and graphene 6.
Silicon waveguide 1 plays guide-lighting effect, and bandpass is set as the rectangular silicon waveguide of 500nm, can support 1550nm
The single mode transport of light.
Pad oxide layer 2 and oxide covering 3 play support and protection.
First metal electrode 4, the second metal electrode 5 are contacted with graphene 6 respectively, generate P+, it is two different in P, N
Adulterate effect.
Graphene 6 is common two-dimensional material, plays light in absorbing waveguides, generates photo-generated carrier and is responsible for transporting current-carrying
The function of son.
Ordinary silicon base graphene photodetector is layered on graphene in silicon waveguide, and electricity is then grown on graphene
Pole.Graphene 6 is directly layered on the top of silicon waveguide 1, and light field can only be interacted in the form of evanescent wave with graphene.And by
In the grapheme two-dimension material the characteristics of, graphene can only interact with the electric field component being parallel on its direction, and silicon
It is upward all to concentrate on the light perpendicular to graphene for the most electric field energy of TM mode in waveguide, further limits silicon substrate graphite
The performance of alkene detector.
Fig. 2 is the structural schematic diagram of silicon substrate graphene photodetector provided in an embodiment of the present invention.As shown in Fig. 2, this
The silicon substrate graphene photodetector provided, including silicon waveguide 1, pad oxide layer 2, oxide covering 3 and graphene are provided
6, wherein the photodetector further includes the sub-wavelength that symmetrically placed the first metal electrode 4 and the second metal electrode 5 are constituted
Metal electrode, the sub-wavelength metal electrode is using two different metal cross arrangements above silicon waveguide.Graphene is no longer
It is attached in silicon waveguide, but fits in metal electrode upper surface by external transfer techniques.
Sub-wavelength refers to the period of two kinds of metal cross arrangements much smaller than work optical wavelength in the present embodiment.Specifically, sub-
Arrangement period≤200nm of length metal electrode structure.Using equivalent medium mode it is found that the metal structure of this sub-wavelength can
To be equivalent to one layer of anisotropic medium, TM mode in waveguide at this time can be calculated according to Light Wave Guide Theory and be distributed.This implementation
Due to the design of sub-wavelength metal electrode structure in example, so that the interaction of light field and graphene has obtained great enhancing,
Therefore, the size of entire detector can be made small, and length can control in 10 microns, and width can control micro- 2
Rice or so.So compact structure ensures the bandwidth of silicon substrate graphene detector, when not considering carrier transit
Between in the case where the carrier mobility of superelevation (graphene have), the bandwidth of entire device can be more than 200GHz.
Fig. 3 is ordinary silicon base graphene photodetector and silicon substrate graphene photodetector electric field provided by the invention point
The comparison diagram of amount.Wire frame representation silicon waveguide region in Fig. 3.As shown in figure 3, due to graphene can only be parallel on its direction
Electric field component interact, and the most electric field energy of TM mode is all concentrated on perpendicular to graphene in silicon waveguide
Light is upward.And most electric field energy all concentrates on being parallel to graphite in silicon substrate graphene photodetector provided by the invention
On the direction of alkene, and all concentrate on the upper surface of metal sub-wavelength structure.
More than, the only preferable specific embodiment of the application, but the protection scope of the application is not limited thereto, and it is any
Within the technical scope of the present application, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
Cover within the scope of protection of this application.Therefore, the protection scope of the application should be subject to the protection scope in claims.
Claims (4)
1. a kind of silicon substrate graphene photodetector, including silicon waveguide, pad oxide layer, oxide covering and graphene,
It is characterized in that,
The photodetector further includes symmetrically placed the first metal electrode and the second metal electrode, and two electrodes are all made of Asia
Wave length metallic structure together constitutes sub-wavelength metal electrode,
The sub-wavelength metal electrode is using two different metal cross arrangements above silicon waveguide.
2. silicon substrate graphene photodetector as described in claim 1, which is characterized in that the sub-wavelength metal electrode structure
Arrangement period≤200nm.
3. silicon substrate graphene photodetector as claimed in claim 1 or 2, which is characterized in that the graphene fits in institute
State the upper surface of sub-wavelength metal electrode.
4. silicon substrate graphene photodetector as claimed in claim 1 or 2, which is characterized in that the length of the photodetector,
Width is micron level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810701611.7A CN108899388B (en) | 2018-06-29 | 2018-06-29 | Silicon-based graphene photoelectric detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810701611.7A CN108899388B (en) | 2018-06-29 | 2018-06-29 | Silicon-based graphene photoelectric detector |
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| Publication Number | Publication Date |
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| CN108899388A true CN108899388A (en) | 2018-11-27 |
| CN108899388B CN108899388B (en) | 2020-02-14 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854234A (en) * | 2019-11-14 | 2020-02-28 | 苏州枫桥光电科技有限公司 | Graphene photoelectric detector based on interdigital electrode structure |
| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN113295275A (en) * | 2021-06-29 | 2021-08-24 | 传周半导体科技(上海)有限公司 | Special shape-adjustable on-chip photoelectric detector |
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| CN110854234A (en) * | 2019-11-14 | 2020-02-28 | 苏州枫桥光电科技有限公司 | Graphene photoelectric detector based on interdigital electrode structure |
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| CN112838136B (en) * | 2020-12-31 | 2023-03-03 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN113295275A (en) * | 2021-06-29 | 2021-08-24 | 传周半导体科技(上海)有限公司 | Special shape-adjustable on-chip photoelectric detector |
| CN113295275B (en) * | 2021-06-29 | 2024-05-14 | 传周半导体科技(上海)有限公司 | Special shape adjustable on-chip photoelectric detector |
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| CN108899388B (en) | 2020-02-14 |
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