CN113295275B - Special shape adjustable on-chip photoelectric detector - Google Patents

Special shape adjustable on-chip photoelectric detector Download PDF

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Publication number
CN113295275B
CN113295275B CN202110725439.0A CN202110725439A CN113295275B CN 113295275 B CN113295275 B CN 113295275B CN 202110725439 A CN202110725439 A CN 202110725439A CN 113295275 B CN113295275 B CN 113295275B
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photoelectric detector
adjustable
array
output
detector array
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CN113295275A (en
Inventor
邓仕杰
高朕
张义荣
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Chuanzhou Semiconductor Technology Shanghai Co ltd
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Chuanzhou Semiconductor Technology Shanghai Co ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P3/00Measuring linear or angular speed; Measuring differences of linear or angular speeds
    • G01P3/36Devices characterised by the use of optical means, e.g. using infrared, visible, or ultraviolet light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4406Plural ranges in circuit, e.g. switchable ranges; Adjusting sensitivity selecting gain values
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/444Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4446Type of detector
    • G01J2001/446Photodiode
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4446Type of detector
    • G01J2001/446Photodiode
    • G01J2001/4466Avalanche

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The invention provides an on-chip photoelectric detector with an adjustable special shape, which consists of a photoelectric detector array (1), a programmable switch array (2), a crosstalk suppression module (3), an adjustable voltage source (4), a transimpedance amplifier (5), a high-pass filter (6), an adjustable gain amplifier (7) and an analog-digital converter (8). The invention can be used for shape adjustment of the photosensitive surface of the photoelectric detector and crosstalk suppression in the detection process, and can be widely applied to the fields of photometry, photoelectric measurement, industrial automatic control, optical communication and the like.

Description

Special shape adjustable on-chip photoelectric detector
Field of the art
The invention relates to an on-chip photoelectric detector with an adjustable special shape, which can be applied to the fields of photometry, photoelectric measurement, industrial automatic control, optical communication and the like. Belonging to the technical field of photoelectric detection.
(II) background art
The photoelectric detector is a device for converting an optical signal into an electric signal based on a photoelectric effect, is a core component of a photoelectric system, has functions of finding and measuring the signal in the photoelectric system, and extracts certain necessary signals for subsequent application, and is widely applied to the fields of photometry, photoelectric measurement, industrial automatic control, optical communication and the like.
The photosurface refers to an area capable of effectively receiving optical signals in the photoelectric detector, the shape of the photosurface of the common photoelectric detector is divided into a circle, an ellipse, a ring, a square, a rectangle and the like, the shape of the photosurface of the photoelectric detector is related to the structure, the application and the like of the detector, once the traditional detector is designed, the shape of the photosurface of the traditional detector is fixed, secondary adjustment can not be carried out, and the application range of the photoelectric detector is limited. In addition, during the process of receiving the optical signal, the reflection and scattering of the optical signal in the propagation and the interference of the ambient light on the signal light can cause the crosstalk of the optical detector, which can cause the output periodic voltage signal to be truncated when the optical detector detects the periodic optical signal, and the detection effect can be seriously affected.
In order to solve the problem, the invention discloses an on-chip photoelectric detector with an adjustable special shape, which can be applied to the fields of photometry, photoelectric measurement, industrial automatic control, optical communication and the like. The system realizes the programmable adjustment of the shape of the photosensitive surface of the photoelectric detector by combining the photoelectric detector array with the programmable switch array, in addition, under the condition of crosstalk occurrence, the sensitivity of the photoelectric detector array is reduced by adjusting the bias voltage of the photoelectric detector array, so that the photocurrent is integrally weakened, the peak shaving of the sine voltage signal amplified by the transimpedance amplifier is weakened until the photocurrent disappears, then the low-frequency part is filtered by the high-pass filter, finally, the signal amplitude output by the high-pass filter is amplified to the signal amplitude before the sensitivity of the photoelectric diode is not adjusted by the controllable gain amplifier, and the analog-digital converter in the system performs analog-digital conversion on the voltage signal and sends the voltage signal to the microcontroller of the system for processing.
(III) summary of the invention
The invention aims to provide an on-chip photoelectric detector with an adjustable special shape, which can be used in the fields of robots, numerical control machine tools, precise measurement, automatic detection, industrial control, rotation speed measurement of various high-precision closed-loop speed regulation systems and servo systems and the like.
An on-chip photoelectric detector with an adjustable special shape comprises a photoelectric detector array (1), a programmable switch array (2), a crosstalk suppression module (3), an adjustable voltage source (4), a transimpedance amplifier (5), a high-pass filter (6), an adjustable gain amplifier (7) and an analog-digital converter (8).
The invention is realized in the following way: the number of the photoelectric detectors in the photoelectric detector array (1) in the system is the same as the number of the switches in the programmable switch array, each photoelectric detector is connected with one switch to form a unit, and all the units are connected in parallel; the shape of the photosurface of the photoelectric detector is adjustable by controlling the switch state in the programmable switch array (2) so that a switch connected with the photoelectric detector positioned in the photosurface is closed and a switch connected with the photoelectric detector positioned outside the photosurface is opened; the periodic optical signals are incident to the photoelectric detector array (1), and the photoelectric detector array (1) receives the optical signals to complete photoelectric conversion; the photoelectric detector array (1) is connected with a transimpedance amplifier (5), the transimpedance amplifier (5) amplifies and converts the photocurrent output by the photoelectric detector array (1) into a voltage signal, and the input of the high-pass filter (6) is connected with the output of the transimpedance amplifier (5) and is used for filtering out a low-frequency signal in the output of the transimpedance amplifier (5); the adjustable gain amplifier (7) amplifies the voltage signal output by the high-frequency filter (6), the analog-digital converter (8) is used for completing the analog-digital conversion, and finally the crosstalk suppression module (3) is used for processing the digital signal output by the analog-digital converter (8); wherein the crosstalk suppression module (3) suppresses crosstalk by controlling the output voltage of the adjustable voltage source (4) and the amplification factor of the adjustable gain amplifier (7).
The photoelectric detector array (1) in the system is a two-dimensional detector array, wherein the photoelectric detector is a PN type, PIN type or avalanche type diode, the photoelectric detector array is used for receiving optical signals and converting the optical signals into current signals, and cathodes of all the photoelectric detectors in the photoelectric detector array (1) are connected in parallel.
The number of the switches in the programmable switch array (2) in the system is consistent with the number of the photodetectors in the photodetector array (1), the input port of each switch in the programmable switch array (2) is connected with the anode of the corresponding photodetector in the photodetector array (1), and the output ends of all the switches in the programmable switch array (2) are connected in parallel; the method for adjusting the special shape is to control the switch state in the programmable switch array (2) to enable the switch connected with the photoelectric detector positioned in the special shape photosensitive surface to be closed and enable the switch connected with the photoelectric detector positioned outside the special shape photosensitive surface to be opened.
In the system, the regulation of the output direct-current voltage of an adjustable voltage source (4) is controlled by a crosstalk suppression module (3), and the direct-current voltage output of the adjustable voltage source (4) is connected with the cathode of a photoelectric detector array (1) so that the photoelectric detector in the photoelectric detector array (1) works in reverse bias; the photodetector array (1) can work under different sensitivities by controlling the output voltage of the adjustable voltage source (4).
The output end of the programmable switch array (2) in the system is connected with a transimpedance amplifier (5), the transimpedance amplifier (5) is used for converting photocurrent output by the photoelectric detector array (1) into a voltage signal, the intensity change of an optical signal incident on the photoelectric detector array (1) is periodically changed (such as sine or cosine), and the periodically changed light intensity signal is converted into a periodically changed voltage signal through the photoelectric conversion of the photoelectric detector array (1) and the amplification of the transimpedance amplifier (5); the input of the high-pass filter (6) is connected with the output of the transimpedance amplifier (5) to filter out low-frequency components in the periodic voltage signal output by the transimpedance amplifier (5).
In the system, an adjustable gain amplifier (7) amplifies a voltage signal output by a high-pass filter (6), and an analog-digital converter (8) converts the voltage signal output by the adjustable gain amplifier (7) into a digital signal and transmits the digital signal to a tamper suppression module (3).
The crosstalk suppression module (3) in the system is used for controlling the output voltage value of the adjustable voltage source (4) and the amplification factor of the adjustable gain amplifier (7).
In the system, when the photoelectric detector array (1) receives an optical signal with periodically changed light intensity, the optical signal can be reflected or scattered in the process of being transmitted to the photoelectric detector array (1), meanwhile, the measured optical signal can be interfered by ambient light, the two conditions can cause crosstalk of the photoelectric detector, and the condition that the output periodic voltage signal of the transimpedance amplifier (5) is truncated can cause serious influence on the detection effect; the method for inhibiting the crosstalk by the system comprises the following steps: when crosstalk occurs, namely when the periodical voltage signal output by the transimpedance amplifier (5) is truncated, the tamper suppression module (3) controls the voltage output by the adjustable voltage source (4) to be reduced so as to weaken the sensitivity of the photoelectric detector array (1), the photocurrent is reduced along with the voltage signal, the amplitude of the voltage signal output by the transimpedance amplifier (5) is reduced, the truncated periodical voltage signal is recovered to be normal, and meanwhile, the tamper suppression module (3) controls the amplification factor of the adjustable gain amplifier (7) to be increased so as to compensate the reduction of the amplitude of the periodical voltage signal caused by the reduction of the sensitivity of the photoelectric detector array (1), so that the amplitude of the periodical voltage signal output to the analog-digital converter (8) before and after the tamper suppression is consistent.
(IV) description of the drawings
FIG. 1 is a schematic diagram of a special shape adjustable on-chip photodetector. The photoelectric detector comprises a photoelectric detector array (1), a programmable switch array (2), a tamper suppression module (3), an adjustable voltage source (4), a transimpedance amplifier (5), a high-pass filter (6), an adjustable gain amplifier (7) and an analog-digital converter (8).
Figure 2 is a schematic illustration of the application of a special shape tunable on-chip photodetector to a pea pod embodiment. The photoelectric detector comprises a 58 multiplied by 24 photoelectric detector array (1), a programmable switch array (2), a tamper suppression module (3), an adjustable voltage source (4), a transimpedance amplifier (5), a high-pass filter (6), an adjustable gain amplifier (7) and an analog-digital converter (8).
Fig. 3 is a schematic diagram of a specific shape-adjustable on-chip photodetector applied to a 58×24 photodetector array in a pea pod embodiment to realize a pea pod, where the shadow-covered detector (11) is a conductive photodetector on the photosurface, and the non-shadow-covered detector (10) is a non-conductive photodetector not on the photosurface.
(Fifth) detailed description of the invention
The invention is further illustrated below in conjunction with specific examples.
Fig. 2 shows an embodiment of the application of the special-shaped adjustable on-chip photodetectors to pea pods, wherein in the embodiment, the number of photodetectors in the 58×24 photodetector array (1) is the same as the number of switches in the programmable switch array, each photodetector is connected with one switch to form a unit, and all units are connected in parallel; the shape of the photosurface of the photoelectric detector is adjustable by controlling the switch state in the programmable switch array (2), as shown in figure 3, so that the switch connected with the photoelectric detector (11) positioned in the pea-pod photosurface is closed, the photoelectric detectors in the pea-pod photosurface are all connected in parallel, and the switch connected with the photoelectric detector (10) positioned outside the pea-pod photosurface is opened; the periodic optical signals are incident to a 58×24 photoelectric detector array (1), and the 58×24 photoelectric detector array (1) receives the optical signals to complete photoelectric conversion; the 58×24 photoelectric detector array (1) is connected with a transimpedance amplifier (5), the transimpedance amplifier (5) amplifies and converts the photocurrent output by the 58×24 photoelectric detector array (1) into a voltage signal, and the input of the high-pass filter (6) is connected with the output of the transimpedance amplifier (5) and is used for filtering out a low-frequency signal in the output of the transimpedance amplifier (5); the adjustable gain amplifier (7) amplifies the voltage signal output by the high-frequency filter (6), and the analog-digital converter (8) performs analog-digital conversion.
When the 58×24 photodetector array (1) receives an optical signal with periodically changing light intensity, the optical signal can be reflected or scattered in the process of being transmitted to the 58×24 photodetector array (1), meanwhile, the measured optical signal can be interfered by ambient light, the two conditions can cause crosstalk of the photodetectors, and the condition that the output periodic voltage signal of the transimpedance amplifier (5) is truncated can be caused, so that the detection effect can be seriously affected; the method for inhibiting the crosstalk by the system comprises the following steps: when the crosstalk occurs, namely when the periodical voltage signal output by the transimpedance amplifier (5) is truncated, the crosstalk suppression module (3) controls the voltage output by the adjustable voltage source (4) to be reduced so as to weaken the sensitivity of the 58×24 photoelectric detector array (1), the photocurrent is reduced along with the reduction, the amplitude of the voltage signal output by the transimpedance amplifier (5) is reduced, the truncated periodical voltage signal is recovered to be normal, and meanwhile, the crosstalk suppression module (3) controls the amplification factor of the adjustable gain amplifier (7) to be increased so as to compensate the reduction of the amplitude of the periodical voltage signal caused by the reduction of the sensitivity of the 58×24 photoelectric detector array (1), so that the amplitude of the periodical voltage signal output to the analog-digital converter (8) before and after the crosstalk suppression is consistent.

Claims (6)

1. An on-chip photoelectric detector with an adjustable special shape comprises a photoelectric detector array (1), a programmable switch array (2), a crosstalk suppression module (3), an adjustable voltage source (4), a transimpedance amplifier (5), a high-pass filter (6), an adjustable gain amplifier (7) and an analog-digital converter (8); the number of the photodetectors in the photodetector array (1) in the system is the same as the number of the switches in the programmable switch array, each photodetector is connected with one switch to form a unit, and all the units are connected in parallel; the shape of the photosurface of the photoelectric detector is adjustable by controlling the switch state in the programmable switch array (2) so that a switch connected with the photoelectric detector positioned in the photosurface is closed and a switch connected with the photoelectric detector positioned outside the photosurface is opened; the periodic optical signals are incident to the photoelectric detector array (1), and the photoelectric detector array (1) receives the optical signals to complete photoelectric conversion; the photoelectric detector array (1) is connected with a transimpedance amplifier (5), the transimpedance amplifier (5) amplifies and converts the photocurrent output by the photoelectric detector array (1) into a voltage signal, and the input of the high-pass filter (6) is connected with the output of the transimpedance amplifier (5) and is used for filtering out a low-frequency signal in the output of the transimpedance amplifier (5); the adjustable gain amplifier (7) amplifies the voltage signal output by the high-frequency filter (6), the analog-digital converter (8) is used for completing the analog-digital conversion, and finally the crosstalk suppression module (3) is used for processing the digital signal output by the analog-digital converter (8); the crosstalk suppression module (3) suppresses crosstalk by controlling the output voltage of the adjustable voltage source (4) and the amplification factor of the adjustable gain amplifier (7); the number of the switches in the programmable switch array (2) is consistent with the number of the photodetectors in the photodetector array (1), the input port of each switch in the programmable switch array (2) is connected with the anode of the corresponding photodetector in the photodetector array (1), and the output ends of all the switches in the programmable switch array (2) are connected in parallel; the method for adjusting the special shape is that the switch connected with the photoelectric detector positioned in the light sensitive surface of the special shape is closed and the switch connected with the photoelectric detector positioned outside the light sensitive surface of the special shape is opened by controlling the switch state in the programmable switch array (2); the output end of the programmable switch array (2) in the system is connected with a transimpedance amplifier (5), the transimpedance amplifier (5) is used for converting photocurrent output by the photoelectric detector array (1) into a voltage signal, the intensity change of an optical signal incident to the photoelectric detector array (1) is periodically changed (such as sine or cosine), and the periodically changed light intensity signal is converted into a periodically changed voltage signal through the photoelectric conversion of the photoelectric detector array (1) and the amplification of the transimpedance amplifier (5); the input of the high-pass filter (6) is connected with the output of the transimpedance amplifier (5) to filter out low-frequency components in the periodic voltage signal output by the transimpedance amplifier (5).
2. A special shape adjustable on-chip photodetector according to claim 1, characterized in that: the photoelectric detector array (1) is a two-dimensional detector array, wherein the photoelectric detectors are PN type, PIN type or avalanche type diodes, the photoelectric detector array is used for receiving optical signals and converting the optical signals into current signals, and cathodes of all the photoelectric detectors in the photoelectric detector array (1) are connected in parallel.
3. A special shape adjustable on-chip photodetector according to claim 1, characterized in that: the regulation of the output direct-current voltage of the adjustable voltage source (4) is controlled by the crosstalk suppression module (3), and the direct-current voltage output of the adjustable voltage source (4) is connected with the cathode of the photoelectric detector array (1) so that the photoelectric detector in the photoelectric detector array (1) works in reverse bias; the photodetector array (1) can work under different sensitivities by controlling the output voltage of the adjustable voltage source (4).
4. A special shape adjustable on-chip photodetector according to claim 1, characterized in that: the adjustable gain amplifier (7) amplifies the voltage signal output by the high-pass filter (6), and the analog-digital converter (8) converts the voltage signal output by the adjustable gain amplifier (7) into a digital signal and transmits the digital signal to the tamper suppression module (3).
5. A special shape adjustable on-chip photodetector according to claim 1, characterized in that: the crosstalk suppression module (3) is used for controlling the output voltage value of the adjustable voltage source (4) and the amplification factor of the adjustable gain amplifier (7).
6. A special shape adjustable on-chip photodetector according to claim 1, characterized in that: when the photoelectric detector array (1) receives an optical signal with periodically changed light intensity, the optical signal can be reflected or scattered in the process of being transmitted to the photoelectric detector array (1), meanwhile, the detected optical signal can be interfered by ambient light, the two conditions can cause crosstalk of the photoelectric detector, the condition of cutting the top of the output periodic voltage signal of the transimpedance amplifier (5) can be caused, and the detection effect can be seriously influenced; the method for inhibiting the crosstalk by the system comprises the following steps: when crosstalk occurs, namely when the periodical voltage signal output by the transimpedance amplifier (5) is truncated, the tamper suppression module (3) controls the voltage output by the adjustable voltage source (4) to be reduced so as to weaken the sensitivity of the photoelectric detector array (1), the photocurrent is reduced along with the voltage signal, the amplitude of the voltage signal output by the transimpedance amplifier (5) is reduced, the truncated periodical voltage signal is recovered to be normal, and meanwhile, the tamper suppression module (3) controls the amplification factor of the adjustable gain amplifier (7) to be increased so as to compensate the reduction of the amplitude of the periodical voltage signal caused by the reduction of the sensitivity of the photoelectric detector array (1), so that the amplitude of the periodical voltage signal output to the analog-digital converter (8) before and after the tamper suppression is consistent.
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CN114136441B (en) * 2021-12-02 2024-05-14 传周半导体科技(上海)有限公司 Large dynamic range multi-wavelength environment light detector
CN117664195B (en) * 2024-02-01 2024-04-26 泉州昆泰芯微电子科技有限公司 Photoelectric detection unit, photoelectric encoder system and motor

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US6348682B1 (en) * 1999-11-12 2002-02-19 Institute Of Microelectronics Photodetector circuit and methods
CN108899388A (en) * 2018-06-29 2018-11-27 华中科技大学 A kind of silicon substrate graphene photodetector
CN111133590A (en) * 2017-07-21 2020-05-08 文和文森斯设备公司 Microstructure enhanced light-absorbing sensitive devices
CN111982166A (en) * 2020-08-14 2020-11-24 桂林电子科技大学 Photoelectric detector array and system for multi-core optical fiber spectral coupling
CN216746425U (en) * 2021-06-29 2022-06-14 传周半导体科技(上海)有限公司 Shape-adjustable on-chip photodetector

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348682B1 (en) * 1999-11-12 2002-02-19 Institute Of Microelectronics Photodetector circuit and methods
CN111133590A (en) * 2017-07-21 2020-05-08 文和文森斯设备公司 Microstructure enhanced light-absorbing sensitive devices
CN108899388A (en) * 2018-06-29 2018-11-27 华中科技大学 A kind of silicon substrate graphene photodetector
CN111982166A (en) * 2020-08-14 2020-11-24 桂林电子科技大学 Photoelectric detector array and system for multi-core optical fiber spectral coupling
CN216746425U (en) * 2021-06-29 2022-06-14 传周半导体科技(上海)有限公司 Shape-adjustable on-chip photodetector

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