CN115015872A - Near-infrared band echo detection device for laser radar - Google Patents
Near-infrared band echo detection device for laser radar Download PDFInfo
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- CN115015872A CN115015872A CN202210676481.2A CN202210676481A CN115015872A CN 115015872 A CN115015872 A CN 115015872A CN 202210676481 A CN202210676481 A CN 202210676481A CN 115015872 A CN115015872 A CN 115015872A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/4802—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00 using analysis of echo signal for target characterisation; Target signature; Target cross-section
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
The invention discloses a laser radar near-infrared band echo detection device which comprises an optical receiving module, a photoelectric conversion module, a power supply module, a bias voltage generation module, a temperature compensation module and a signal processing module, wherein the optical receiving module is used for receiving a laser beam; the photoelectric conversion module comprises a driving circuit and an avalanche photodiode; round light spots formed after echo signals of the laser radar pass through the optical receiving module enter a photosensitive surface of the avalanche photodiode; the bias voltage generation module is electrically connected with the drive circuit and is used for providing working bias voltage for the avalanche photodiode so as to enable the avalanche photodiode to work in an avalanche effect region; the temperature compensation module is used for adjusting the output bias voltage of the bias voltage generation module according to the change of the ambient temperature; the signal processing module is used for amplifying and filtering the current signal output by the avalanche photodiode. By using the invention, the light to be detected can be completely received, the signal accuracy is improved, and the signal-to-noise ratio and the dynamic range of the near-infrared band echo signal are improved.
Description
Technical Field
The invention belongs to the technical field of optical and electronic engineering, and particularly relates to a laser radar near-infrared band echo detection device.
Background
The laser radar is a product combining the traditional radar technology and the modern laser technology, and has the advantages of large measurement range, high space-time resolution, short measurement time and the like. The method is widely applied to the research fields of laser atmospheric transmission, global climate prediction, aerosol radiation effect, atmospheric environment and the like. The laser radar system comprises a laser transmitting unit, a telescope receiving unit, a subsequent light path, a detector and a signal acquisition and operation control unit. The working principle is as follows: pulsed light emitted by the laser enters the atmosphere and interacts with air molecules, aerosol, cloud and the like in the atmosphere, and after echo signals of the pulsed light are received by the telescope, the echo signals are detected and collected, and algorithm inversion is carried out, so that relevant profile information of the atmosphere can be obtained.
The detection process of the echo signal directly determines the signal-to-noise ratio and the dynamic range of the final output signal, and has important significance in laser radar. The intensity of the echo signal of the near-infrared band of the laser radar is low, and the laser radar is easily interfered by background light noise and surrounding electromagnetic fields, so that an effective light path receiving and detecting device needs to be designed, the influence of environmental factors can be weakened, and a complete echo signal can be received as far as possible.
The avalanche photodiode is a photoelectric information conversion device with high sensitivity, has high avalanche gain effect, can effectively improve the sensitivity, reaction speed and signal bandwidth of optical signal detection, and is very suitable for the detection of near-infrared band optical signals due to the special material. In order to reduce dark current, the avalanche photodiode has a small photosensitive surface area, and the diameter of the avalanche photodiode is usually less than 3 mm. Therefore, the optical-mechanical structure needs to be designed so that the photosensitive surface of the avalanche photodiode can receive most or even the whole light to be measured.
On the other hand, the avalanche photodiode requires a reverse bias voltage for its operation. When the bias voltage is too small, the avalanche photodiode works in a linear region and cannot generate an avalanche effect; when the bias voltage is too large, the avalanche photodiode works in a Geiger mode and cannot stably work for a long time. Meanwhile, when the avalanche photodiode operates under a fixed bias voltage, the avalanche gain of the avalanche photodiode is obviously changed along with the ambient temperature, and the bias voltage of the avalanche photodiode needs to be controlled. Therefore, how to design a near-infrared band echo detection device for a laser radar becomes an important problem to be solved urgently by those skilled in the art.
Disclosure of Invention
The invention provides a laser radar near-infrared band echo detection device, which aims to solve the problems that the intensity of an echo signal of a laser radar near-infrared band provided in the background technology is low, the interference of background light noise and a surrounding electromagnetic field is easy, the position adjustment and the responsiveness of a photosensitive surface of an avalanche photodiode are easily influenced by the ambient temperature, and the like.
A laser radar near-infrared band echo detection device is characterized by comprising an optical receiving module, a photoelectric conversion module, a power supply module, a bias generation module, a temperature compensation module and a signal processing module; the power supply module supplies power to the bias voltage generation module, the temperature compensation module and the signal processing module respectively; the photoelectric conversion module comprises a driving circuit and an avalanche photodiode;
the light to be measured enters a photosensitive surface of the avalanche photodiode through a circular light spot formed after the light passes through the optical receiving module; the bias voltage generation module is electrically connected with the drive circuit and is used for providing working bias voltage for the avalanche photodiode so as to enable the avalanche photodiode to work in an avalanche effect region; the temperature compensation module is used for adjusting the output bias voltage of the bias voltage generation module according to the change of the ambient temperature; the signal processing module is used for amplifying and filtering the current signal output by the avalanche photodiode.
Furthermore, the optical receiving module comprises an XY axis adjusting frame, an adjustable lens sleeve connected with the XY axis adjusting frame through threads and a converging lens fixed inside the adjustable lens sleeve; the position of the converging lens is adjusted by rotating the adjustable lens sleeve back and forth in the direction of the optical axis.
Furthermore, the photoelectric conversion module is fixed inside the XY axis adjusting frame;
the driving circuit is a circular circuit board, and the avalanche photodiode is arranged in the midpoint of the circular circuit board; the position of the circular circuit board is finely adjusted in two directions of an X, Y axis by rotating an adjuster on the XY axis adjusting frame, so that the position of the photosensitive surface of the avalanche photodiode is changed, and the circular light spot completely enters the photosensitive surface of the avalanche photodiode.
Furthermore, the temperature compensation module comprises a temperature sensor and a microprocessor; the temperature sensor is used for sensing the change of the ambient temperature and sending a detected temperature signal to the microprocessor for processing, and the microprocessor outputs a control signal through operation to adjust the output bias voltage of the bias voltage generation module.
Furthermore, the signal processing module comprises a transimpedance amplifying circuit and a low-pass filtering circuit; the avalanche photodiode outputs a current signal after detecting a near-infrared band echo signal, the current signal is converted into a voltage signal through a trans-impedance amplifying circuit to be output, and clutter is filtered through a low-pass filter circuit.
Further, the transimpedance amplification circuit comprises an operational amplifier U1, a feedback resistor R1, a feedback capacitor C1, a resistor R2, a resistor R3, a resistor R4, a radio frequency connector J1 and a radio frequency connector J2;
the operational amplifier U1 is an operational amplifier with high bandwidth and low input bias current; the pin 3 of the operational amplifier U1 is grounded, and the pin 2 is connected with the radio frequency connector J1 through a resistor R2; the pin 6 of the operational amplifier U1 is connected with a radio frequency connector J2 through a resistor R3 and a resistor R4 which are connected in series; the pin 7 of the operational amplifier U1 is connected with a positive 5-volt power supply, and the pin 4 of the operational amplifier U1 is connected with a negative 5-volt power supply; two ends of the feedback capacitor C1 are respectively connected with a pin 2 and a pin 6 of the operational amplifier U1; the feedback resistor R1 is connected to the 2 pin of the operational amplifier U1 and the connection of the resistor R3 and the resistor R4 respectively.
Compared with the prior art, the invention has the following beneficial effects:
1. the device can adjust the position of the converged light spot along the direction of the optical axis, and the position of the photosensitive surface is adjusted by two shafts X, Y, so that the avalanche photodiode can receive the light to be detected as much as possible, and the signal-to-noise ratio is improved.
2. The invention eliminates the output signal deviation of the avalanche photodiode caused by the internal environment temperature change of the laser radar system by using a temperature compensation method, and improves the signal accuracy.
3. The invention utilizes the transimpedance amplification circuit to convert the current signal output by the avalanche photodiode into a voltage signal, adjusts the bandwidth of the output signal to meet the bandwidth requirement of a subsequent acquisition card, improves the signal-to-noise ratio and the dynamic range of the near-infrared band echo signal in the laser radar system, and has the characteristics of high automation degree, high detection speed, high sensitivity, low cost and the like.
Drawings
FIG. 1 is a schematic diagram of a laser radar near-infrared band echo detection device according to the present invention;
fig. 2 is an assembly view of an optical receiving module and a photoelectric conversion module in the present invention;
fig. 3 is a front view of an optical receiving module and a photoelectric conversion module in the present invention;
fig. 4 is a rear view of an optical receiving module and a photoelectric conversion module according to the present invention;
fig. 5 is a circuit diagram of the transimpedance amplifier circuit according to the present invention.
Detailed Description
The invention will be described in further detail below with reference to the drawings and examples, which are intended to facilitate the understanding of the invention without limiting it in any way.
As shown in fig. 1, a near-infrared band echo detection device for a laser radar includes an optical receiving module 1, a photoelectric conversion module 2, a power module 3, a bias voltage generating module 4, a temperature compensation module 5, and a signal processing module 6.
The optical receiving module 1 comprises a converging lens 101, an adjustable lens sleeve 102 and an XY axis adjusting frame 103; the photoelectric conversion module 2 includes an avalanche photodiode 201 and a drive circuit 202; the temperature compensation module 5 comprises a temperature sensor and a microprocessor; the signal processing module 6 includes a transimpedance amplification circuit and a low-pass filter circuit.
As shown in fig. 2 to 4, the converging lens 101 is located inside the adjustable lens sleeve 102, and the position of the converging lens 101 can be adjusted by rotating the adjustable lens sleeve 102 back and forth along the optical axis direction. A beam of parallel light passes through the converging lens 101 to form a circular light spot, and the position of the circular light spot in the optical axis direction can be easily changed by adjusting the position of the converging lens 101.
The XY axis adjusting frame 103 is connected with the adjustable lens sleeve 102 through threads, the photoelectric conversion module 2 is fixed inside the XY axis adjusting frame 103, the driving circuit 202 is a circular circuit board, the avalanche photodiode 201 is located at the center of the circular circuit board, and the position of the circuit board can be finely adjusted in two directions of the X, Y axis by rotating an adjuster on the XY axis adjusting frame 103, so that the position of the photosensitive surface of the avalanche photodiode 201 is changed, a circular light spot completely enters the photosensitive surface of the avalanche photodiode 201, and the optical signal is received more completely.
The power module 3 supplies power to the bias generation module 4, the temperature compensation module 5 and the signal processing module 6, respectively. The bias voltage generation module 4 is electrically connected to the driving circuit 202 to provide the avalanche photodiode 201 with a suitable operating bias voltage to operate in the avalanche effect region. The temperature sensor can sense the change of the environmental temperature and send the detected signal to the microprocessor for processing, and the microprocessor outputs a control signal through operation and compensates the responsivity deviation of the avalanche photodiode 201 caused by the temperature by adjusting the output bias voltage of the bias voltage generation module 4. The avalanche photodiode 201 outputs a current signal after detecting the near-infrared band echo signal, the current signal is converted into a voltage signal through a trans-impedance amplifying circuit to be output, and clutter is filtered through a low-pass filter circuit.
As shown in fig. 5, the transimpedance amplifier circuit is composed of an operational amplifier U1, a feedback resistor R1, a feedback capacitor C1, a resistor R2, a resistor R3, a resistor R4, a radio frequency connector J1, and a radio frequency connector J2. The operational amplifier U1 is a high-bandwidth, low-input bias current operational amplifier; the pin 3 of the operational amplifier U1 is grounded, and the pin 2 is connected with the radio frequency connector J1 through a resistor R2; the pin 6 of the operational amplifier U1 is connected with the radio frequency connector J2 through a resistor R3 and a resistor R4 which are connected in series; the pin 7 of the operational amplifier U1 is connected with a positive 5-volt power supply, and the pin 4 of the operational amplifier U1 is connected with a negative 5-volt power supply; two ends of the feedback capacitor C1 are respectively connected with a pin 2 and a pin 6 of the operational amplifier U1; the feedback resistor R1 is connected to the 2 pin of the operational amplifier U1 and the connection of the resistor R3 and the resistor R4 respectively.
By using the invention, the near-infrared wave band echo signal of the laser radar system can be detected; meanwhile, the positions of the light path and the detector can be adjusted, so that the light to be detected is completely received; the output signal deviation of the avalanche photodiode caused by the internal environment temperature change of the laser radar system is eliminated by using a temperature compensation method, and the signal accuracy is improved; the current signal output by the avalanche photodiode is converted into a voltage signal by using a transimpedance amplification circuit, so that the signal-to-noise ratio and the dynamic range of the near-infrared band echo signal are improved.
The embodiments described above are intended to illustrate the technical solutions and advantages of the present invention, and it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, additions and equivalents made within the scope of the principles of the present invention should be included in the scope of the present invention.
Claims (6)
1. A laser radar near-infrared band echo detection device is characterized by comprising an optical receiving module, a photoelectric conversion module, a power supply module, a bias generation module, a temperature compensation module and a signal processing module; the power supply module supplies power to the bias voltage generation module, the temperature compensation module and the signal processing module respectively; the photoelectric conversion module comprises a driving circuit and an avalanche photodiode;
the light to be measured enters the photosensitive surface of the avalanche photodiode through a circular light spot formed by the optical receiving module; the bias voltage generation module is electrically connected with the drive circuit and is used for providing working bias voltage for the avalanche photodiode so as to enable the avalanche photodiode to work in an avalanche effect region; the temperature compensation module is used for adjusting the output bias voltage of the bias voltage generation module according to the change of the ambient temperature; the signal processing module is used for amplifying and filtering the current signal output by the avalanche photodiode.
2. The lidar near-infrared band echo detection device of claim 1, wherein the optical receiving module comprises an XY axis adjusting frame, an adjustable lens sleeve connected with the XY axis adjusting frame through a thread, and a converging lens fixed inside the adjustable lens sleeve; the position of the converging lens is adjusted by rotating the adjustable lens sleeve back and forth in the direction of the optical axis.
3. The lidar near-infrared band echo detection device according to claim 2, wherein the photoelectric conversion module is fixed inside the XY axis adjusting frame;
the driving circuit is a circular circuit board, and the avalanche photodiode is arranged in the midpoint of the circular circuit board; the position of the circular circuit board is finely adjusted in two directions of an X, Y axis by rotating an adjuster on the XY axis adjusting frame, so that the position of the photosensitive surface of the avalanche photodiode is changed, and the circular light spot completely enters the photosensitive surface of the avalanche photodiode.
4. The lidar near-infrared band echo detection device of claim 1, wherein the temperature compensation module comprises a temperature sensor and a microprocessor; the temperature sensor is used for sensing the change of the ambient temperature and sending a detected temperature signal to the microprocessor for processing, and the microprocessor outputs a control signal through operation to adjust the output bias voltage of the bias voltage generation module.
5. The lidar near-infrared band echo detection device according to claim 1, wherein the signal processing module comprises a transimpedance amplification circuit and a low-pass filter circuit; the avalanche photodiode outputs a current signal after detecting a near-infrared band echo signal, the current signal is converted into a voltage signal through a trans-impedance amplifying circuit to be output, and clutter is filtered through a low-pass filter circuit.
6. The lidar near-infrared band echo detection device according to claim 5, wherein the transimpedance amplifier circuit comprises an operational amplifier U1, a feedback resistor R1, a feedback capacitor C1, a resistor R2, a resistor R3, a resistor R4, a radio frequency connector J1, and a radio frequency connector J2;
the operational amplifier U1 is an operational amplifier with high bandwidth and low input bias current; the pin 3 of the operational amplifier U1 is grounded, and the pin 2 is connected with the radio frequency connector J1 through a resistor R2; the pin 6 of the operational amplifier U1 is connected with a radio frequency connector J2 through a resistor R3 and a resistor R4 which are connected in series; the pin 7 of the operational amplifier U1 is connected with a positive 5-volt power supply, and the pin 4 of the operational amplifier U1 is connected with a negative 5-volt power supply; two ends of the feedback capacitor C1 are respectively connected with a pin 2 and a pin 6 of the operational amplifier U1; the feedback resistor R1 is connected to the 2 pin of the operational amplifier U1 and the connection of the resistor R3 and the resistor R4 respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210676481.2A CN115015872A (en) | 2022-06-15 | 2022-06-15 | Near-infrared band echo detection device for laser radar |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210676481.2A CN115015872A (en) | 2022-06-15 | 2022-06-15 | Near-infrared band echo detection device for laser radar |
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| CN115015872A true CN115015872A (en) | 2022-09-06 |
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| CN202210676481.2A Pending CN115015872A (en) | 2022-06-15 | 2022-06-15 | Near-infrared band echo detection device for laser radar |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116699568A (en) * | 2023-07-28 | 2023-09-05 | 中测国检(北京)科技有限责任公司 | Photoelectric conversion device for detecting ranging frequency based on avalanche diode |
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2022
- 2022-06-15 CN CN202210676481.2A patent/CN115015872A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116699568A (en) * | 2023-07-28 | 2023-09-05 | 中测国检(北京)科技有限责任公司 | Photoelectric conversion device for detecting ranging frequency based on avalanche diode |
| CN116699568B (en) * | 2023-07-28 | 2024-01-12 | 中测国检(北京)科技有限责任公司 | Photoelectric conversion device for detecting ranging frequency based on avalanche diode |
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