CN110854234A - Graphene photoelectric detector based on interdigital electrode structure - Google Patents
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Abstract
The invention relates to a graphene photoelectric detector based on an interdigital electrode structure, which comprises a substrate layer and an optical waveguide arranged on the substrate layer, wherein a medium isolation layer is arranged on the optical waveguide, two metal layers which are not in contact with each other are arranged on the medium isolation layer, and the two metal layers are used as electrodes; graphene layers are arranged on the two metal layers and serve as light absorption layers. The invention provides an interdigital electrode-based graphene photoelectric detector which is compatible with a CMOS (complementary metal oxide semiconductor) process and has high performance.
Description
Technical Field
The invention belongs to the technical field of photoelectrons, and particularly relates to a graphene photoelectric detector based on an interdigital electrode structure.
Background
The high-speed integrated photoelectric detector is a device for converting optical pulses in optical fibers or waveguides into electric signals, and plays an important role in the field of integrated photoelectronics. The existing high-speed integrated photoelectric detector mainly comprises a germanium-silicon detector with a PIN junction structure and a III-V semiconductor photoelectric detector. However, they have the disadvantages that the detection speed has reached the theoretical limit, cannot be further increased, and the manufacturing process is complicated.
The graphene has extremely high carrier mobility, the theoretical detection bandwidth can reach 500GHz, and the graphene has very wide potential application in the field of high-speed photoelectric detection. High-speed graphene detectors have been reported more now: graphene-based photodetectors were first reported by IBM in summer feng and Mueller T in 2009 in the united states (see literature Xia F, Mueller T, Lin Y, et al. ultra fast graphene photodetector [ J ]. Nature nanotechnology,2009, 4(12): 839.); in the same year, in Xifeng and Mueller T, the band bending range of 200nm is found when metal and graphene are in contact (see Mueller T, Xia F, Freitag M, et al, Role of contacts in graphene transducers: A scanning photocurrent student [ J ]. Physical Review B,2009, 79(24): 245430.). In 2013, the university of vienna photon research institute reports a 3dB bandwidth of 18GHz and a responsivity of 0.03A/W for a graphene photodetector compatible with CMOS process (see the documents pop specchi a, hummer M, furchi M, et al, CMOS-compatible graphene photo detector converting all optical communication banks [ J ]. Nature Photonics, 2013, 7(11): 892.); in the same year, Columbia university reports a 3dB bandwidth of 20GHz with a 0.1A/W graphene detector (see the document Gan X, Shiue R J, GaoY, et al. Chip-integrated ultra fast graphene photodetector with high sensitivity [ J ]. Nature Photonics, 2013, 7(11): 883.); in 2017, Germany AMICA reported Graphene photodetectors with 3dB bandwidth exceeding 76 GHz (see the documents Schall D, Porschatis C, Otto M, et. Graphene photodetectors with a band and width >76 GHz fabricated in a 6 "processed line [ J ]. Journal of Physics D: Applied Physics, 2017, 50(12): 124004.).
Although graphene has the advantage of natural high bandwidth, the graphene has only 2.3% of light absorption rate, and cannot give consideration to responsivity while achieving high speed, so that the graphene photoelectric detector faces the bottleneck that the graphene photoelectric detector cannot be practically applied.
Therefore, in order to solve the problems in the prior art, an interdigital electrode graphene-based photodetector compatible with a CMOS process and having high performance needs to be developed.
Disclosure of Invention
The invention overcomes the defects of the prior art, and provides the interdigital electrode-based graphene photoelectric detector which is compatible with a CMOS (complementary metal oxide semiconductor) process and has high performance.
In order to achieve the purpose, the invention adopts the technical scheme that: a graphene photoelectric detector based on an interdigital electrode structure comprises a substrate layer and an optical waveguide arranged on the substrate layer, wherein a medium isolation layer is arranged on the optical waveguide, two metal layers which are not in contact with each other are arranged on the medium isolation layer, and the two metal layers are used as electrodes; graphene layers are arranged on the two metal layers and serve as light absorption layers.
In a preferred embodiment of the present invention, the optical waveguide includes a first dielectric filling layer, a second dielectric filling layer, and a waveguide disposed on the substrate layer, and the first dielectric filling layer and the second dielectric filling layer are respectively located on two sides of the waveguide.
In a preferred embodiment of the present invention, the isolation dielectric layer is made of an insulating material. Specifically, the isolation dielectric layer is one of silicon oxide, silicon oxynitride and boron nitride.
In a preferred embodiment of the present invention, the thickness of the isolation dielectric layer is 5 to 12 nm.
In a preferred embodiment of the invention, the waveguide is rectangular and the material of the waveguide is one or more of silicon, germanium, a silicon-germanium alloy, a group III-V semiconductor or a group II-IV semiconductor.
In a preferred embodiment of the present invention, the substrate layer, the first dielectric filling layer and the second dielectric filling layer are low-refractive-index dielectric materials, and semiconductor oxide is adopted, and the refractive index of the semiconductor oxide is significantly smaller than that of the waveguide.
In a preferred embodiment of the present invention, the first metal layer and the second metal layer are made of a material having adhesion to a graphene material. Specifically, the first metal layer and the second metal layer are made of one or more of titanium, nickel, cobalt and palladium.
In a preferred embodiment of the present invention, the first metal layer and the second metal layer are both shaped as comb-teeth structures on one side and rectangular flat-plate structures on the other side.
In a preferred embodiment of the present invention, the distance between the teeth of the first metal layer and the teeth of the second metal layer is less than or equal to 200nm, and the width of each of the metal electrodes is less than or equal to 200 nm. Specifically, one part of the comb tooth structures of the first metal layer and the second metal layer is placed on the waveguide, and the interval between the comb tooth structures of the first metal layer and the second metal layer is less than or equal to 200 nm.
In a preferred embodiment of the present invention, the material of the graphene layer is mechanically exfoliated single-layer or multi-layer graphene, or single-layer or multi-layer graphene prepared by CVD vapor deposition.
The invention solves the defects existing in the background technology, and has the beneficial effects that:
the invention provides an interdigital electrode-based graphene photoelectric detector which is compatible with a CMOS (complementary metal oxide semiconductor) process and has high performance.
Firstly, the interdigital electrode structure greatly reduces the carrier recombination and scattering effect because the electrode distance is less than or equal to 200nm, so that the response current is greatly increased.
Secondly, placing the graphene on top of the electrode avoids the extreme contact resistance of graphene in the case of one electrode. The photocurrent and bandwidth are further improved.
Thirdly, the graphene is not limited to mechanically stripped graphene, and the graphene prepared by vapor deposition (CVD) still has good effect, so that the process difficulty is reduced.
Fourth, the fabrication process is compatible with conventional SOI CMOS process and easy to integrate.
Drawings
The invention is further illustrated with reference to the following figures and examples.
Fig. 1 is a schematic top view of a graphene photodetector based on interdigital electrodes according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a cross-sectional structure of a waveguide of a graphene photodetector based on interdigital electrodes according to an embodiment of the present invention;
FIG. 3 shows the bandwidth of the detector obtained by simulation calculation;
in the figure, 1-substrate layer, 21-first dielectric filling layer, 22-second dielectric filling layer, 3-waveguide, 4-isolation medium layer, 51-first metal layer, 52-second metal layer, and 6-graphene layer.
Detailed Description
For a better understanding of the invention by those skilled in the art, the invention is described in further detail below with reference to the accompanying drawings and examples.
The embodiments described below are only a part of the embodiments of the present invention, and not all of them; based on the embodiments of the present invention, other embodiments used by those skilled in the art without any creative effort belong to the protection scope of the present invention.
As shown in fig. 1, the embodiment discloses that to achieve the above purpose, the technical solution adopted by the present invention is: a graphene photoelectric detector based on an interdigital electrode structure comprises a substrate layer 1 and an optical waveguide arranged on the substrate layer 1, wherein the optical waveguide comprises a first medium filling layer 21, a second medium filling layer 22 and a waveguide 3 which are arranged on the substrate layer 1, and the first medium filling layer 21 and the second medium filling layer 22 are respectively arranged at two ends of a rectangular waveguide 3; the dielectric isolation layer 4 covers the first dielectric filling layer 21, the second dielectric filling layer 22 and the waveguide 3, two first metal layers 51 and two second metal layers 52 which are not in contact with each other are arranged on the dielectric isolation layer 4, and the first metal layers 51 and the second metal layers 52 are used as electrodes; a gap is reserved between the first metal layer 51 and the second metal layer 52, and the graphene layer 6 serving as a light absorbing layer is provided on the first metal layer 51 and the second metal layer 52.
In a preferred embodiment of the present invention, the substrate layer 1, the first dielectric filling layer 21 and the second dielectric filling layer 22 are low refractive index dielectric materials, and are made of semiconductor oxide, and the refractive index of the semiconductor oxide is significantly smaller than that of the waveguide 3.
In a preferred embodiment of the invention, the material of the waveguide 3 is one or more of silicon, germanium, a silicon-germanium alloy, a group III-V semiconductor or a group II-IV semiconductor. In an embodiment of the invention the material of the waveguide 3 is one of silicon, germanium, a germanium-silicon alloy, a group III-V semiconductor or a group II-IV semiconductor.
In a preferred embodiment of the present invention, the isolation dielectric layer 4 is made of an insulating material. The thickness of the isolation medium layer 4 is 5-12 nm. Specifically, the isolation dielectric layer 4 is one of silicon oxide, silicon oxynitride, and boron nitride.
In a preferred embodiment of the present invention, the first metal layer 51 and the second metal layer 52 are both shaped as comb-shaped structures on one side and rectangular flat plate structures on the other side. Specifically, one part of the comb tooth structure of the first metal layer 51 and the second metal layer 52 is placed on the waveguide, the interval between the comb teeth of the first metal layer 51 and the second metal layer 52 is less than or equal to 200nm, and the width of each comb tooth metal electrode is less than or equal to 200 nm. More specifically, the first metal layer 52 and the second metal layer 52 are made of a material having adhesion to a graphene material. Furthermore, the first metal layer 51 and the second metal layer 52 are made of one or more of titanium, nickel, cobalt, and palladium.
In a preferred embodiment of the present invention, the material of the graphene layer 6 is mechanically exfoliated single-layer or multi-layer graphene, or single-layer or multi-layer graphene prepared by CVD vapor deposition.
The working principle of the photoelectric detector of the invention is as follows: when the photodetector works, a proper bias voltage is applied to two sides of the metal electrode, namely the first metal layer 52 and the second metal layer 52, when a light pulse is coupled into the optical waveguide, due to the photovoltaic effect and the photoconductive effect, free electrons in the graphene layer 6 are greatly increased, the resistance of the graphene layer 6 is reduced, and meanwhile, a photovoltaic voltage is formed in the metal electrode, so that a photocurrent is formed, and electrons flow into the metal electrode and are detected. Since free electrons of the graphene layer 6 can be effectively transported to the metal electrode within a 200nm range, a metal electrode interval of 200nm or less will obtain a very large photocurrent. At the same time, due to the extremely high mobility of the graphene layer 6 carriers, the photodetector will be able to provide an extremely high 3dB bandwidth. According to the scheme, the graphene layer 6 is placed on the metal electrode, namely the first metal layer 52 and the second metal layer 52, so that residual photoresist in the metal electrode and the graphene layer 6 is avoided, the conductance of the photoelectric detector is improved, and the bandwidth and the responsivity of the photoelectric detector are optimized.
The technical scheme of the invention is further illustrated by the following specific examples: the schematic diagram of the cross-sectional structure of the optical waveguide of the interdigital electrode graphene-based photodetector in the present embodiment is shown in fig. 1, and the top view thereof is shown in fig. 2. Light waves with the wavelength of 1.55 mu m are adopted, the substrate layer 1, the first dielectric medium filling layer 21 and the second dielectric medium filling layer 22 are made of SiO2 materials, the rectangular waveguide 3 is made of Si materials with the width of 0.5 mu m and the height of 0.22 mu m, the isolation medium layer 4 is made of Al2O3 materials with the thickness of 10nm, and the light refractive indexes of the SiO2 materials, the Si materials and the Al2O3 materials are respectively 1.44, 3.47 and 0.81. The first metal layer 51 and the second metal layer 52 are made of Ti/Au alloy, wherein the interdigital electrode is 5/45nmTi/Au alloy, the flat plate part is 20/200nmTi/Au alloy, the distance between the first interdigital electrode and the second interdigital electrode in the first metal layer 51 is 50nm, and the width of the interdigital electrode is 200 nm; the distance between interdigital electrodes on the same metal layer is 200nm, and the energy band bending distance is 200nm when graphene is in contact with metal, so that the metal electrodes are manufactured to be less than 200nm, the response current can be greatly improved, and the equivalent resistance of the photoelectric detector is reduced due to the substantial reduction of electron recombination and scattering, so that the bandwidth of the photoelectric detector is increased. The graphene layer 6 covers the metal electrode, and compared with the graphene layer arranged below the metal electrode, the contact resistance is greatly reduced, and the bandwidth is further improved.
Fig. 3 is a bandwidth of the detector obtained by simulation calculation, where d is a distance between the first interdigital electrode and the second interdigital electrode in the first metal layer 51; or/and d is the spacing between the first interdigitated electrode and its second interdigitated electrode in the second metal layer 52. For example, the invention selects one of the parameters indicated by the dotted line, and can see that the bandwidth can reach 73 GHz. While larger pitches can continue to increase bandwidth but reduce the photo-responsivity.
In light of the foregoing description of the preferred embodiment of the present invention, it is to be understood that various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A graphene photoelectric detector based on an interdigital electrode structure comprises a substrate layer (1) and an optical waveguide arranged on the substrate layer (1), and is characterized in that: a medium isolation layer (4) is arranged on the optical waveguide, two metal layers which are not in contact with each other are arranged on the medium isolation layer (4), and the two metal layers are used as electrodes; graphene layers (6) are arranged on the two metal layers, and the graphene layers (6) are used as light absorption layers.
2. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the optical waveguide comprises a first dielectric filling layer (21), a second dielectric filling layer (22) and a waveguide (3) which are arranged on the substrate layer (1), and the first dielectric filling layer (21) and the second dielectric filling layer (22) are respectively positioned on two sides of the waveguide (3).
3. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the isolation dielectric layer (4) is made of an insulating material.
4. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the thickness of the isolation dielectric layer (4) is 5-12 nm.
5. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the waveguide (3) is rectangular and the material of the waveguide (3) is one or more of silicon, germanium, a silicon-germanium alloy, a group III-V semiconductor or a group II-IV semiconductor.
6. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the substrate layer (1), the first dielectric filling layer (21) and the second dielectric filling layer (22) are low-refractive-index dielectric materials, semiconductor oxides are adopted, and the refractive index of the semiconductor oxides is remarkably smaller than that of the waveguide (3).
7. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the first metal layer (51) and the second metal layer (52) are made of a material having adhesion to a graphene material.
8. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the shapes of the first metal layer (51) and the second metal layer (52) are both comb-tooth structures on one side and rectangular flat plate structures on the other side.
9. The interdigital electrode structure-based graphene photodetector of claim 8, wherein: one part of the comb tooth structure of the first metal layer (51) and the second metal layer (52) is arranged on the waveguide (3), the interval between the comb teeth of the first metal layer (51) and the second metal layer (52) is less than or equal to 200nm, and the width of each comb tooth metal electrode is less than or equal to 200 nm.
10. The interdigital electrode structure-based graphene photodetector of claim 1, wherein: the material of the graphene layer (6) is single-layer or multi-layer graphene which is mechanically stripped or single-layer or multi-layer graphene which is prepared by CVD gas phase deposition.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112331728A (en) * | 2021-01-06 | 2021-02-05 | 武汉敏芯半导体股份有限公司 | Waveguide transistor detector based on low-dimensional material and preparation method thereof |
| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN113284963A (en) * | 2021-04-22 | 2021-08-20 | 北京邮电大学 | Interdigital guided mode photoelectric detector |
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| US9425335B2 (en) * | 2014-01-06 | 2016-08-23 | Electronics And Telecommunications Research Institute | Optical detector |
| CN106980189A (en) * | 2017-06-02 | 2017-07-25 | 电子科技大学 | Graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide |
| CN108899388A (en) * | 2018-06-29 | 2018-11-27 | 华中科技大学 | A kind of silicon substrate graphene photodetector |
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| US9425335B2 (en) * | 2014-01-06 | 2016-08-23 | Electronics And Telecommunications Research Institute | Optical detector |
| CN106980189A (en) * | 2017-06-02 | 2017-07-25 | 电子科技大学 | Graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide |
| CN108899388A (en) * | 2018-06-29 | 2018-11-27 | 华中科技大学 | A kind of silicon substrate graphene photodetector |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN112838136B (en) * | 2020-12-31 | 2023-03-03 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN112331728A (en) * | 2021-01-06 | 2021-02-05 | 武汉敏芯半导体股份有限公司 | Waveguide transistor detector based on low-dimensional material and preparation method thereof |
| CN113284963A (en) * | 2021-04-22 | 2021-08-20 | 北京邮电大学 | Interdigital guided mode photoelectric detector |
| CN113284963B (en) * | 2021-04-22 | 2021-12-03 | 北京邮电大学 | Interdigital guided mode photoelectric detector |
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