CN116053336A - Preparation method of light trapping structure on surface of InGaAs avalanche detector - Google Patents
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- CN116053336A CN116053336A CN202211691594.6A CN202211691594A CN116053336A CN 116053336 A CN116053336 A CN 116053336A CN 202211691594 A CN202211691594 A CN 202211691594A CN 116053336 A CN116053336 A CN 116053336A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 28
- 238000000926 separation method Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention belongs to the technical field of semiconductor photoelectric devices, and discloses a preparation method of a surface light trapping structure of an InGaAs avalanche detector. The invention reduces the reflectivity of the InGaAs surface to near infrared laser, realizes near infrared absorption enhancement of 1064nm wavelength, and solves the problem of lower quantum efficiency of the traditional InGaAs avalanche detector in 1064nm wave band.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, relates to an InGaAs avalanche detector, and particularly relates to a preparation method of a light trapping structure on the surface of the InGaAs avalanche detector.
Background
The InGaAs avalanche detector is a semiconductor photoelectric detector which is prepared based on InGaAs/InP heterojunction epitaxial material and has an absorption multiplication separation avalanche diode structure, and has wide application in the fields of laser ranging, spectral analysis, gas sensing and the like. The InGaAs avalanche detector generally adopts InGaAs as an absorption layer material to realize the efficient absorption of near infrared band incident light, adopts indium phosphide as a multiplication layer material to realize the collision ionization amplification of the avalanche electric field excitation of photo-generated carriers, and adopts a planar or mesa-type InGaAs avalanche architecture to realize the accurate and controllable doping concentration, and can be divided into different device specifications such as units, quadrants, lines, arrays and the like according to the system requirements.
The main performance indexes of the InGaAs avalanche detector are sensitivity and noise, wherein the key factors influencing the sensitivity are quantum efficiency, photon absorption efficiency, photon generation carrier multiplication efficiency and the like, and the key factors are that the absorption coefficient of the absorption region material to incident light with specific wavelength depends on the factors. For the commonly used laser with the wavelength of 1064nm and 1550nm, the quantum efficiency of the InGaAs avalanche detector at the wavelength of 1550nm is more than 85%, and the quantum efficiency of the InGaAs avalanche detector at the wavelength of 1064nm is about 60%, if the light absorption efficiency of the InGaAs avalanche detector at the wavelength of 1064nm can be effectively improved, the improvement effect on the sensitivity is very remarkable.
The absorption coefficient of InGaAs at 1064nm wavelength depends on the characteristics of InGaAs material and is related to physical properties such as energy band width, so that an effective means for improving light absorption efficiency is to reduce the reflectivity of incident light at an incident interface, and the traditional way of increasing an antireflection film is adopted to increase the reflection, so that the quantum efficiency is only about 60%, and further improvement is more difficult. However, with the development of semiconductor micro-nano processing technology in recent years, light absorption of InGaAs at 1064nm wavelength can be greatly improved based on nonlinear effect of photons in localized micro-nano optical electric fields.
Disclosure of Invention
Object of the invention
The purpose of the invention is that: the preparation method solves the problem that the existing InGaAs avalanche detector is low in quantum efficiency in the 1064nm wave band, forms a sub-wavelength surface light trapping structure through a special surface micro-nano structure design, realizes the regulation and control of an InGaAs surface micro-nano photoelectric field, reduces the reflectivity of near infrared laser in the 1064nm wave band, and improves the absorption efficiency.
(II) technical scheme
In order to solve the technical problems, the invention provides a preparation method of a surface light trapping structure of an InGaAs avalanche detector, which is based on an absorption multiplication separation avalanche diode structure, and adopts InGaAs as an absorption layer material and indium phosphide as a multiplication layer material to prepare a mesa-type InGaAs avalanche detector.
The method comprises the following steps:
firstly, preparing an InGaAs/InP multilayer heterojunction material by adopting a heteroepitaxial growth process, wherein n is as follows ++ On InP substrate 1, n is sequentially extended + InP buffer layer 2, i-type InGaAs absorption layer 3, n + InGaAsP transition layers 4, n + An InP charge layer 5, an i-type InP multiplication layer 6, and a p ++ InP doped layer 7.
Step two, adopting photoetching and etching technology to prepare the InGaAs/InP multilayer heterojunction material into a mesa avalanche diode, and etching the mesa avalanche diode into n ++ InP substrate 1.
And thirdly, preparing the ammonium sulfide and silicon nitride composite passivation layer 8 by adopting surface treatment and a dielectric film deposition process.
Fourth, adopting etching process to make p ++ The surface of the InP doped layer 7 is provided with a surface light trapping structure 9 with an inverted pyramid right-four-sided conical groove structure which is closely distributed.
The surface light trapping structures 9 are arranged periodically and closely on the surface of the light inlet surface of the device.
The surface light trapping structure 9 has the following characteristics: the four sides of the opening are equal in length and are 500nm; the depth and the side length of the right-side tapered groove are also equal, and the depth is 500nm; the surface roughness of the structure of the positive four-sided conical groove is controlled within 5 nm.
Fifth, adopting a metal film deposition process to prepare p ++ P electrode 10 for ohmic contact of InP doped layer 7 and preparation and n ++ The InP substrate 1 forms an N electrode 11 in ohmic contact.
(III) beneficial effects
According to the preparation method of the surface light trapping structure of the InGaAs avalanche detector, provided by the technical scheme, the novel surface light trapping structure with the inverted pyramid positive four-sided cone-shaped groove structure which is closely arranged is adopted, so that the near infrared laser reflectivity of the InGaAs surface is reduced, the near infrared absorption enhancement of 1064nm wavelength is realized, and the problem that the quantum efficiency of the traditional InGaAs avalanche detector is lower in the 1064nm wave band is solved.
Drawings
Fig. 1 to 4 are schematic views of the process of the method according to the invention in sequence.
Fig. 5 is a schematic view of a surface light trapping structure according to the present invention, wherein the surface light trapping structure is a compact arrangement of a regular tetrahedral tapered groove structure resembling an inverted pyramid.
Detailed Description
To make the objects, contents and advantages of the present invention more apparent, the following detailed description of the present invention will be given with reference to the accompanying drawings and examples.
According to the preparation method of the surface light trapping structure of the InGaAs avalanche detector, the InGaAs/InP heteroepitaxial material with the absorption multiplication separation structure is prepared based on the 2-inch InP wafer, and the mesa type InGaAs avalanche detector prepared according to the material is used as an embodiment of the invention.
The preparation method of the embodiment comprises the following steps:
the first step, adopting MOCVD equipment, doping concentration is 3-8E 18cm at thickness of 350 μm -3 N of (2) ++ On InP substrate 1, doping concentration of 1E18cm is formed with a thickness of 0.5 μm in order -3 N of (2) + An InP buffer layer 2, an unintentionally doped i-type InGaAs absorption layer 3 with a thickness of 2 μm, a doping concentration of 1E17cm with a thickness of 0.1 μm -3 N of (2) + An InGaAsP transition layer 4 with a thickness of 0.4 μm and a doping concentration of 1E17cm -3 N of (2) + An InP charge layer 5, an i-type InP multiplication layer 6 with a thickness of 0.5 mu m and an unintentional doping concentration of 2-5E 18cm with a thickness of 0.4 mu m -3 P of (2) ++ The InP doped layer 7 is shown in fig. 1.
Secondly, adopting photoetching and ICP etching technology to prepare the InGaAs/InP multilayer heterojunction material into a mesa avalanche diode with the diameter of 50 mu m,the etching depth is to completely enter n ++ An InP substrate 1, see fig. 2.
And thirdly, preparing an ammonium sulfide and silicon nitride composite passivation layer 8 with the thickness of 0.5 mu m and the thickness of 0.2 mu m of silicon nitride by adopting a chemical wet surface treatment and PECVD dielectric film deposition process, wherein the ammonium sulfide and silicon nitride composite passivation layer is shown in figure 2.
Fourth, ICP etching process is adopted to etch the silicon wafer at p ++ The surface of the InP doped layer 7 is provided with a surface light trapping structure 9 with an inverted pyramid right-four-sided tapered groove structure which is closely arranged, as shown in fig. 3.
Specific details of the surface trapping structure are shown in fig. 5. The surface light trapping structures 9 are arranged periodically and closely on the surface of the light inlet surface of the device. The surface light trapping structure 9 has the following characteristics: the four sides of the opening are equal in length and are 500nm; the depth and the side length of the right-side tapered groove are also equal, and the depth is 500nm; the surface roughness of the structure of the positive four-sided conical groove is controlled within 5 nm.
Fifth, adopting a metal film deposition process to prepare p ++ Titanium-platinum-gold P electrode 10 with thickness of 1 mu m for forming ohmic contact by InP doped layer 7 and preparation method and n ++ The InP substrate 1 forms an N electrode 11 of gold germanium nickel with an ohmic contact thickness of 1 μm, as shown in fig. 4.
According to the design and preparation method of the surface light trapping structure of the InGaAs avalanche detector, the prepared InGaAs avalanche detector achieves the index that the quantum efficiency is greater than 85% @1064nm, and the absorption enhancement of a near infrared band is realized.
As can be seen from the technical scheme, the invention has the following remarkable characteristics:
(1) The invention provides an InGaAs avalanche detector based on an absorption multiplication separation avalanche diode structure, which is prepared by taking InGaAs as an absorption layer material and indium phosphide as a multiplication layer material, and provides a novel surface light trapping structure with an inverted pyramid positive four-sided cone-shaped groove structure which is closely arranged, so that the near infrared laser reflectivity of the InGaAs surface is reduced, the near infrared absorption enhancement of 1064nm wavelength is realized, and the problem that the quantum efficiency of the traditional InGaAs avalanche detector is lower in a 1064nm wave band is solved.
(2) The invention is based on MBE or MOCVD heteroepitaxial growth technology for preparing InGaAs/InP multilayer heterojunction material, and prepares a mesa avalanche diode, and by adopting a novel surface light trapping structure with an inverted pyramid positive four-sided tapered groove structure and compact arrangement, the near infrared laser reflectivity of the InGaAs surface is reduced, the absorption of incident light in a near infrared band is enhanced, and the problem that the quantum efficiency of a traditional InGaAs avalanche detector in a 1064nm band is lower is solved.
(3) The invention creatively proposes a novel surface light trapping structure with inverted pyramid positive four-sided cone-shaped groove structure which is closely arranged, reduces the reflectivity of the InGaAs surface to near infrared laser, and realizes near infrared absorption enhancement of 1064nm wavelength.
(4) The method of the invention can provide reference in designing and preparing InGaAs linear and Geiger avalanche detectors. According to the InGaAs avalanche detector prepared by the preparation method of the light trapping structure on the surface of the InGaAs avalanche detector, high quantum efficiency absorption of 1064nm wavelength is realized, and the method is proved to be feasible.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. The preparation method of the light trapping structure on the surface of the InGaAs avalanche detector is characterized by comprising the following steps of:
firstly, preparing an InGaAs/InP multilayer heterojunction material by adopting a heteroepitaxial growth process, wherein n is as follows ++ On an InP substrate (1), n is sequentially extended + An InP buffer layer (2), an i-type InGaAs absorption layer (3), and n + InGaAsP transition layers (4), n + An InP charge layer (5), an i-type InP multiplication layer (6), and a p-type InP multiplication layer ++ An InP doped layer (7);
step two, adopting photoetching and etching technology to prepare the InGaAs/InP multilayer heterojunction material into mesa type avalancheDiode, etch into n ++ An InP substrate (1);
thirdly, preparing an ammonium sulfide and silicon nitride composite passivation layer (8) by adopting a surface treatment and dielectric film deposition process;
fourth, adopting etching process to make p ++ Preparing a surface light trapping structure (9) with inverted pyramid right-four-sided conical groove structures closely distributed on the surface of the InP doped layer (7);
fifth, adopting a metal film deposition process to prepare p ++ P electrode (10) for forming ohmic contact with InP doped layer (7) and preparation and n ++ An N electrode (11) in ohmic contact with the InP substrate (1) is formed.
2. The method for preparing a surface light trapping structure of an InGaAs avalanche detector according to claim 1, wherein in the fourth step, the surface light trapping structure (9) is arranged periodically and tightly on the surface of the light inlet surface of the device.
3. The method for fabricating a surface light trapping structure of an InGaAs avalanche detector according to claim 2, wherein in the first step, a doping concentration of 3-8E 18cm is reached at a thickness of 350 μm -3 N of (2) ++ On an InP substrate (1), a doping concentration of 1E18cm is formed with a thickness of 0.5 μm in order -3 N of (2) + An InP buffer layer (2), an i-type InGaAs absorption layer (3) with a thickness of 2 μm and an unintentional doping concentration of 1E17cm with a thickness of 0.1 μm -3 N of (2) + An InGaAsP transition layer (4) with a thickness of 0.4 μm and a doping concentration of 1E17cm -3 N of (2) + An InP charge layer (5), an i-type InP multiplication layer (6) with a thickness of 0.5 mu m and an unintentional doping concentration of 2-5E 18cm with a thickness of 0.4 mu m -3 P of (2) ++ An InP doped layer (7).
4. The method for fabricating a surface light trapping structure of an InGaAs avalanche detector according to claim 3, wherein in the second step, a mesa type avalanche diode having a diameter of 50 μm is fabricated.
5. The method for preparing a surface light trapping structure of an InGaAs avalanche detector according to claim 4, wherein in the third step, an ammonium sulfide+silicon nitride composite passivation layer (8) composed of ammonium sulfide with a thickness of 0.5 μm and silicon nitride with a thickness of 0.2 μm is prepared.
6. The method for preparing a surface light trapping structure of an InGaAs avalanche detector according to claim 5, wherein in the fourth step, the four sides of the opening of the surface light trapping structure (9) are equal, and the length is 500nm; the depth and the side length of the right-side tapered groove are also equal, and the depth is 500nm; the surface roughness of the structure of the positive four-sided conical groove is controlled within 5 nm.
7. The method for fabricating a surface light trapping structure of an InGaAs avalanche detector according to claim 6, wherein in the fifth step, the P electrode (10) is a titanium-platinum electrode with a thickness of 1 μm.
8. The method for fabricating a surface light trapping structure of an InGaAs avalanche detector according to claim 7, wherein in the fifth step, the N electrode (11) is a 1 μm thick gold germanium nickel electrode.
9. A surface light trapping structure of an ingaas avalanche detector, characterized in that it is manufactured by the method for manufacturing a surface light trapping structure of an ingaas avalanche detector according to any one of claims 1 to 8.
10. Application of a preparation method of a surface light trapping structure of an InGaAs avalanche detector based on any one of claims 1-8 in the technical field of semiconductor photoelectric devices.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116565043A (en) * | 2023-07-07 | 2023-08-08 | 江苏华兴激光科技有限公司 | Infrared extended wavelength photodetector chip epitaxial wafer structure |
| CN116581175A (en) * | 2023-07-07 | 2023-08-11 | 江苏华兴激光科技有限公司 | Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip |
| CN117276376A (en) * | 2023-11-17 | 2023-12-22 | 粒芯科技(厦门)股份有限公司 | Thin-layer high-frequency avalanche photodiode and application thereof |
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- 2022-12-27 CN CN202211691594.6A patent/CN116053336A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116565043A (en) * | 2023-07-07 | 2023-08-08 | 江苏华兴激光科技有限公司 | Infrared extended wavelength photodetector chip epitaxial wafer structure |
| CN116581175A (en) * | 2023-07-07 | 2023-08-11 | 江苏华兴激光科技有限公司 | Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip |
| CN117276376A (en) * | 2023-11-17 | 2023-12-22 | 粒芯科技(厦门)股份有限公司 | Thin-layer high-frequency avalanche photodiode and application thereof |
| CN117276376B (en) * | 2023-11-17 | 2024-03-08 | 粒芯科技(厦门)股份有限公司 | Thin-layer high-frequency avalanche photodiode and application thereof |
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