CN116247110A - High quantum efficiency photoelectric detector - Google Patents
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Abstract
The invention discloses a broadband high quantum efficiency photoelectric detector, wherein a photodiode, a ring resonant cavity and an optical waveguide are monolithically integrated on a semi-insulating substrate, in the structure of a photoelectric detector, the ring resonant cavity is coupled with the optical waveguide, an optical signal to be detected which is coupled into the optical waveguide is restrained in the ring resonant cavity, and the optical signal is continuously coupled into an optical absorption layer in the circulating propagation process in the resonant cavity, so that the quantum efficiency of the photoelectric detector is improved, and the basic scientific problem that the internal quantum efficiency of the photoelectric detector is reduced when the bandwidth is improved by microminiaturizing the photoelectric detector can be alleviated.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a high quantum efficiency photoelectric detector.
Background
With the rapid increase in wireless communication demand, the capacity and data transmission speed of mobile communication systems are continuously updated, and higher-speed wireless communication systems are being developed. The development of wireless communication technology is not separated from the construction of novel infrastructures such as artificial intelligence, industrial Internet, internet of things and the like. An on-board wireless communication system on land and a laser/microwave hybrid satellite communication system on air or at sea are expected to realize high-capacity and high-transmission-rate wireless communication. The photodetector device is required to have the performance of broadband, low power consumption, high quantum efficiency, high output power, and the like at the same time as a core component in the two wireless communication systems. The bandwidth and the output power of the photoelectric conversion device are limited due to the carrier transit time and the space charge effect in the photoelectric conversion device, and the bandwidth and the output power and the bandwidth and the quantum efficiency of the photoelectric detector are mutually limited.
Therefore, how to provide a high quantum efficiency photodetector with high compatibility and high performance is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of this, the present invention provides a broadband high quantum efficiency photodetector, which is to solve the problem of the mutual restriction between quantum efficiency and bandwidth in the semiconductor photodetector in the prior art, and to improve the structure of the existing photodetector.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a high quantum efficiency photodetector comprising: a semi-insulating substrate;
an optical waveguide is arranged on the semi-insulating substrate, and the tail end of the optical waveguide is coupled with the annular resonant cavity; the semiconductor epitaxial layer sequentially comprises an optical waveguide lower cladding layer and an optical waveguide core layer from bottom to top, wherein the optical waveguide lower cladding layer is formed by etching materials which are epitaxial on the semi-insulating substrate and are the same as the substrate, and the dimension of the optical waveguide core layer on an N contact table top is the same as that of an optical absorption table top, so that optical coupling is facilitated, and the optical waveguide upper cladding layer is arranged on part of the optical waveguide core layer forming the optical waveguide;
the optical waveguide lower cladding layer is heavily N-type doped during epitaxy, is the optical waveguide lower cladding layer and forms an N contact table top, so that the optical waveguide lower cladding layer has two purposes, saves materials, and is provided with an N-type metal electrode on the N contact table top at one side of the light absorption table top;
the optical waveguide upper cladding layer is made of a material with a low refractive index, and can cover the upper side of the optical waveguide core layer, or can cover the upper side, the left side and the right side of the optical waveguide core layer at the same time, so that the loss of the optical waveguide can be reduced;
the light absorption table top is arranged on the top end face of the tail part of the optical waveguide core layer, the semiconductor epitaxial layer is sequentially provided with a light matching layer, an electron collecting layer, a gradual change band gap layer, a light absorption layer, an electron blocking layer and a P-type contact layer from bottom to top, and the P-type contact layer is deposited with a P-type metal electrode with the same area.
Compared with the prior art, the invention discloses a high quantum efficiency photoelectric detector, wherein the annular resonant cavity is coupled with the optical waveguide, the optical signal to be detected, which is coupled into the optical waveguide, is restrained in the annular resonant cavity, and the optical signal is continuously coupled into the optical absorption layer in the circulating propagation process in the resonant cavity, so that the quantum efficiency of the photoelectric detector is improved, and the basic scientific problem that the internal quantum efficiency is reduced when the bandwidth is improved by the miniaturized photoelectric detector can be relieved.
Further, the real part of the refractive index between the semiconductor epitaxial layers gradually increases from the semi-insulating substrate side to the light absorbing layer, the real part of the refractive index of the electron blocking layer is smaller than that of the light absorbing layer, and the electron blocking layer cannot absorb light signals.
Furthermore, the upper cladding of the optical waveguide is made of an insulating material with the refractive index smaller than that of the core layer of the optical waveguide, so that the loss of the optical waveguide can be reduced; the light incident end of the optical waveguide has a rectangular or tapered geometry in the light incident direction, which can increase the light coupling efficiency.
Furthermore, the electron collecting layer adopts graded doping distribution, the doping type is N-type, and the doping concentration is gradually reduced from one side of the light matching layer to one side of the graded band gap layer, so that the built-in electric field is introduced and the electric field distribution in the device is regulated and controlled.
Further, the graded band gap layer is made of a semiconductor material which is linearly or gradiently graded with the components of the semi-insulating substrate in a lattice matching or pseudo matching way, and the corresponding forbidden band width is linearly or gradiently graded from being equal to the forbidden band width of the electron collecting layer to being equal to the forbidden band width of the light absorbing layer, so that the conduction band barrier peak at the heterojunction interface is reduced; the graded band gap layer comprises bipolar doping distribution, namely an N-type material which is heavily doped in a certain thickness at one side close to the electron collecting layer, a P-type material which is heavily doped in a certain thickness at one side close to the light absorbing layer, and a material containing low N-type impurities with background doping in the middle, so that the electric field distribution in a regulation period is convenient; the conduction band barrier spike at the heterojunction interface is reduced.
Further, the light absorption layer is made of a semiconductor material capable of absorbing light signals and having a constant forbidden bandwidth; or the light absorption layer is made of photosensitive semiconductor materials with linearly or gradient gradual change components which are lattice matched with the semi-insulating substrate, and the corresponding energy band distribution satisfies that one side close to the gradual change band gap layer is narrow in forbidden band width and linearly or gradient gradually increases to be smaller than or equal to the forbidden band width of the electron blocking layer; the light absorption layer adopts graded doping distribution, the doping type is P type, and the doping concentration is gradually reduced from one side of the light matching layer to one side of the graded band gap layer, so that an electron drift electric field is conveniently introduced into the absorption layer.
Furthermore, the annular resonant cavity is prepared from the optical waveguide lower cladding layer, the optical waveguide core layer and the optical matching layer by ultraviolet lithography or electron beam lithography, etching and other processes, so that monolithic integration is realized; the ring diameter of the ring resonator is equal to the width of the light absorbing mesa, so that the optical coupling efficiency between the ring resonator and the light absorbing mesa can be improved.
Furthermore, the area and the position of the light absorption mesa in the direction parallel to the incident light can be adjusted according to specific requirements, and the structure of the N contact mesa needs to be adjusted accordingly, which is beneficial to the performance of the device.
In the designed structure of the high quantum efficiency photoelectric detector, on one hand, the invention proposes to prepare an optical waveguide lower cladding layer by etching with epitaxial heavily doped N-type material, to deposit solid insulating material or spin-coat organic polymer and to prepare the optical waveguide cladding layer by curing; on the other hand, a ring resonator prepared from an optical waveguide lower cladding layer, an optical waveguide core layer, an optical matching layer, and the like by ultraviolet lithography or electron beam lithography, etching, and the like is fabricated at the end of the optical waveguide. When the light source is coupled with the designed structure, the light coupling efficiency and the constraint capacity of the light waveguide on the light energy can be improved due to the existence of the light waveguide cladding layers (the light waveguide upper cladding layer and the light waveguide lower cladding layer); after the optical signals are coupled into the optical waveguide, part of the optical signals are coupled into the optical absorption layer to be absorbed due to the gradual increase of the real part of the refractive index between the epitaxial layers, so that photoelectric conversion is realized, and photocurrent is formed under the condition of externally applied reverse bias. Most of the optical signals which do not enter the optical absorption layer are coupled into the ring resonator, and the optical signals are gradually coupled into the optical absorption layer in the process of transmission in the ring resonator, so that the effective absorption length of the device can be improved. Therefore, compared with the common structure under the same condition, the structure provided by the invention can adopt the miniaturized active mesa area to improve the bandwidth and the response speed of the device. Therefore, the invention provides a technical scheme for decoupling the bandwidth and quantum efficiency mutual constraint relation of the photoelectric detector, shows a beneficial structure capable of realizing high-efficiency bandwidth product, and has great potential for being widely applied to the fields of optical signal detection, optical fiber communication, satellite communication, optical signal processing and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of the overall structure of a first embodiment of a broadband high quantum efficiency photodetector according to the present invention.
Fig. 2 is a schematic cross-sectional view of an active region in a direction perpendicular to incident light provided by a broadband high quantum efficiency photodetector of the present invention.
Fig. 3 is a schematic diagram of the overall structure of a second embodiment of a broadband high quantum efficiency photodetector according to the present invention.
Fig. 4 is a schematic diagram of the overall structure of a third embodiment of a broadband high quantum efficiency photodetector according to the present invention.
Fig. 5 is a schematic diagram of the overall structure of a fourth embodiment of a broadband high quantum efficiency photodetector according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention discloses a device perspective view shown in fig. 1 and a cross-section schematic view of an active area of the device in a direction perpendicular to incident light shown in fig. 2, and as a specific embodiment, the broadband high quantum efficiency photoelectric detector comprises an optical waveguide lower cladding layer 2, an optical waveguide core layer 3, an optical matching layer 4, an electron collecting layer 5, a graded band gap layer 6, an optical absorption layer 7, an electron blocking layer 8 and a P-type contact layer 9 which are sequentially arranged from one side of a semi-insulating substrate 1 to the epitaxial layer on the top layer, and further comprises an optical waveguide upper cladding layer 12 above the optical waveguide core layer 3, an N-type metal electrode 11 which is arranged at a certain distance from one side of an optical absorption table top 15 and a P-type metal electrode 10 above the P-type contact layer 9, wherein the optical waveguide lower cladding layer 2 also forms an N-type contact table top 16.
In addition, the optical waveguide lower cladding layer 2, the optical waveguide core layer 3 and the optical waveguide upper cladding layer 12 formed by solidifying the deposited solid insulating material or the spin-coated organic polymer which are formed by etching the semi-insulating substrate 1 material together form an optical waveguide 13; a ring resonator 14, which is prepared from the optical waveguide lower cladding layer 2, the optical waveguide core layer 3, the optical matching layer 4, etc. by ultraviolet lithography or electron beam lithography, etching, etc. is monolithically integrated at the end of the optical waveguide 13.
In the embodiment, the thickness of the optical waveguide lower cladding layer 2 is 2.0 μm, the doping type is donor type, and the doping concentration is 1.5X10 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The real part of the refractive index between the semiconductor epitaxial layers gradually increases from the side of the semi-insulating substrate 1 to the light absorbing layer 7,the electron blocking layer 8 has a real part of the refractive index smaller than the light absorbing layer 7 and is not capable of absorbing the optical signal so that the optical signal is coupled from the optical waveguide 13 into the light absorbing layer 7, the crystal lattice of all semiconductor materials being matched or pseudomorphic to the semi-insulating substrate.
The thickness of the optical waveguide core layer 3 was 1.0 μm, the doping type was donor type, and the doping concentration was 1×10 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the light matching layer 4 was 0.3 μm, the doping type was donor type, and the doping concentration was 5×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The light incident end of the optical waveguide 13 has a tapered geometry in the light incident direction; the electron collecting layer 5 has a thickness of 0.3 μm and a doping type of donor type, and a doping concentration of about 5×10 from the end near the light matching layer 4 17 Atoms/cm 3 The linear taper is about 5 x 10 near the end of the graded band gap layer 6 14 Atoms/cm 3 。
The graded band gap layer 6 adopts a component band gap linear graded material which is lattice matched with the semi-insulating substrate 1, the corresponding forbidden band width is graded from being equal to the electron collecting layer 5 to being equal to the light absorbing layer 7, if the linear graded material is difficult to epitaxially grow, the graded band gap layer is graded to be about 0.04 mu m, wherein the doping concentration is 1.5x10 within the range of about 0.01 mu m near one end of the electron collecting layer 5 18 Atoms/cm 3 Is doped with a donor-type impurity in a concentration of 1.5X10 to a thickness of about 0.01 μm near the light absorbing layer 7 18 Atoms/cm 3 The thickness between the two bipolar layers is 0.02 μm, a material with linear gradual change of forbidden bandwidth is adopted, and the doped donor type impurity concentration is not more than 5×10 15 Atoms/cm 3 。
The material energy gap corresponding to the light absorption layer 7 is kept unchanged and smaller than the energy of the detected photon, the thickness is 0.22 mu m, the doping type is acceptor type, and the doping concentration is 1 multiplied by 10 from the side close to the gradual change band gap layer 17 Atoms/cm 3 Linear taper to 1 x 10 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The materials, layer thicknesses and doping profiles of the electron collecting layer 5, the graded bandgap layer 6 and the light absorbing layer 7 are used for smoothing conduction band, regulating internal electric field distribution, and facilitating the transition of photo-generated electrons from the light absorbing layer 7 to the electron collecting layer5。
The energy gap of the material corresponding to the electron blocking layer 8 is at least 0.05eV larger than the energy value of the detected photon, and the impurity concentration of the doped acceptor is 1 multiplied by 10 19 Atoms/cm 3 The thickness was 0.1. Mu.m.
The material forbidden bandwidth of the P-type contact layer 9 is gradually changed from one side of the electron blocking layer 8 and gradually reduced, meanwhile, heavy doping is adopted, and the doping acceptor impurity concentration is 3 multiplied by 10 19 Atoms/cm 3 。
The light absorbing mesa 15 has a width L3 of 2 μm and a length L2 of 6 μm.
The distance L5 between the N-type metal electrode 11 (N-type metal film collector) and the light absorption mesa 15 is 1.5 μm, the thickness is 0.3 μm, the width L4 is 5 μm, and the length L2 is equal to the length L2 of the photosensitive mesa (light absorption mesa 15); the thickness of the P-type metal film electrode 10 (P-type metal electrode) on the P-type contact layer 9 is 0.3 μm, the width L3 is equal to the width L3 of the photosensitive mesa, and the length L2 is equal to the length L2 of the photosensitive mesa.
The thickness of the optical waveguide upper cladding layer 12 is about 1 μm, and the length L1 of the optical waveguide incident end is 20 μm.
The area and position of the photosensitive mesa in the direction parallel to the incident light can be adjusted according to specific requirements, and the structure of the N-contact mesa needs to be adjusted accordingly, which is beneficial to the performance of the device, as shown in fig. 3, 4 and 5.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A high quantum efficiency photodetector, comprising: a semi-insulating substrate (1);
an optical waveguide (13) is arranged on the semi-insulating substrate (1), and the tail end of the optical waveguide (13) is coupled with a ring resonant cavity (14); the semiconductor epitaxial layer sequentially comprising the optical waveguide (13) from bottom to top is an optical waveguide lower cladding layer (2) and an optical waveguide core layer (3), wherein the optical waveguide lower cladding layer (2) is formed by etching the same material as a substrate which is epitaxial on the semi-insulating substrate (1), the dimension of the optical waveguide core layer (3) on an N contact table top (16) is the same as that of an optical absorption table top (15), and an optical waveguide upper cladding layer (12) is arranged on a part of the optical waveguide core layer (3) forming the optical waveguide;
the optical waveguide lower cladding layer (2) is heavily N-type doped during epitaxy, is an optical waveguide lower cladding layer and forms an N contact table top (16), and an N-type metal electrode (11) is arranged on the N contact table top (16) and positioned on the side of the light absorption table top (15);
the optical waveguide upper cladding layer (12) is made of a material with a low refractive index, and the optical waveguide upper cladding layer (12) can cover the upper side of the optical waveguide core layer (3), or can cover the upper side, the left side and the right side of the optical waveguide core layer (3) at the same time;
the light absorption table top (15) is arranged on the top end face of the tail part of the optical waveguide core layer (3), the semiconductor epitaxial layer is sequentially provided with a light matching layer (4), an electron collecting layer (5), a gradual change band gap layer (6), a light absorption layer (7), an electron blocking layer (8) and a P-type contact layer (9) from bottom to top, and the P-type contact layer (9) is deposited with a P-type metal electrode (10) with the same area.
2. A broadband high quantum efficiency photodetector according to claim 1, characterized in that the real part of the refractive index between the semiconductor epitaxial layers increases gradually from the side of the semi-insulating substrate (1) to the light absorbing layer (7), the real part of the refractive index of the electron blocking layer (8) is smaller than the light absorbing layer (7), and the electron blocking layer (8) is not capable of absorbing optical signals.
3. A broadband high quantum efficiency photodetector according to claim 1, wherein said optical waveguide upper cladding (12) is made of an insulating material having a refractive index smaller than that of said optical waveguide core (3); the light incident end of the optical waveguide (13) has a rectangular or tapered geometry in the light incident direction.
4. A broadband high quantum efficiency photodetector according to claim 1, wherein said electron collecting layer (5) adopts a graded doping profile of N-type doping type with a doping concentration gradually decreasing from the side of said light matching layer (4) to the side of said graded bandgap layer (6).
5. A broadband high quantum efficiency photodetector according to claim 1, characterized in that said graded bandgap layer (6) is made of a semiconductor material having a linear or gradient grading of composition which is lattice matched or pseudomorphic to said semi-insulating substrate (1), the corresponding bandgap being graded linearly or gradient from a bandgap equal to said electron collecting layer (5) to a bandgap equal to said light absorbing layer (7); the graded band gap layer (6) comprises bipolar doping distribution, namely an N-type material which is heavily doped in a certain thickness at one side close to the electron collecting layer (5), a P-type material which is heavily doped in a certain thickness at one side close to the light absorbing layer (7), and a material containing low N-type impurities with background doping in the middle.
6. A broadband high quantum efficiency photodetector according to claim 1, wherein said light absorbing layer (7) is made of a semiconductor material capable of absorbing an optical signal but having a constant forbidden bandwidth; or, the light absorption layer (7) is made of a photosensitive semiconductor material with linearly or gradient gradually changed components which are matched with the semi-insulating substrate (1), and the corresponding energy band distribution meets the requirement that one side close to the gradual change band gap layer (6) is provided with a narrow energy gap, and the energy gap is gradually increased to be smaller than or equal to the energy gap of the electron blocking layer (8) linearly or gradient gradually; the light absorption layer (7) adopts graded doping distribution, the doping type is P-type, and the doping concentration is gradually reduced from one side of the electron blocking layer (8) to one side of the graded band gap layer (6).
7. The broadband high quantum efficiency photodetector according to claim 1, wherein said ring resonator (14) is prepared from said optical waveguide lower cladding layer (2), said optical waveguide core layer (3), and said optical matching layer (4) by ultraviolet lithography or electron beam lithography, etching, etc. to realize monolithic integration; the ring diameter of the ring-shaped resonant cavity (14) is equal to the width of the light absorption table-board (15).
8. A broadband high quantum efficiency photodetector according to claim 1, wherein the area and position of the light absorbing mesa (15) in a direction parallel to the incident light is adjustable according to specific requirements, while the structure of the N-contact mesa (16) is adapted to facilitate device performance.
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| CN202310226342.4A CN116247110A (en) | 2023-03-10 | 2023-03-10 | High quantum efficiency photoelectric detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936646A (en) * | 2023-06-25 | 2023-10-24 | 无锡芯光互连技术研究院有限公司 | Photoelectric detector based on surface contact, chip and silicon-based photon chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116936646A (en) * | 2023-06-25 | 2023-10-24 | 无锡芯光互连技术研究院有限公司 | Photoelectric detector based on surface contact, chip and silicon-based photon chip |
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