CN116936646A - Photoelectric detector based on surface contact, chip and silicon-based photon chip - Google Patents
Photoelectric detector based on surface contact, chip and silicon-based photon chip Download PDFInfo
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- CN116936646A CN116936646A CN202310984373.6A CN202310984373A CN116936646A CN 116936646 A CN116936646 A CN 116936646A CN 202310984373 A CN202310984373 A CN 202310984373A CN 116936646 A CN116936646 A CN 116936646A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 230000003287 optical effect Effects 0.000 claims abstract description 41
- 230000031700 light absorption Effects 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- -1 boron ions Chemical class 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000004088 simulation Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000000969 carrier Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The application discloses a photoelectric detector based on surface contact, a chip and a silicon-based photon chip thereof, wherein the photoelectric detector based on surface contact comprises: a first waveguide and a second waveguide spaced apart by a predetermined distance; the first waveguide receives incident light and couples the received light into the second waveguide; the shape of the second waveguide is annular; the substrate layer is used for doping; the first doped region is formed in a set region of the substrate layer through doping; the annular light absorption layer is positioned on the surface of the first doping region and is seamlessly adjacent to the inner wall of the second waveguide and is used for receiving the optical signal transmitted by the second waveguide, and the received optical signal is transmitted back and forth in the annular light absorption layer so as to generate total reflection to form resonance, and the refractive index of the annular light absorption layer is larger than that of the second waveguide; the second doped region is doped and diffused into the annular light absorbing layer from the surface of the annular light absorbing layer. The application can improve the linearity of the photoelectric detector, reduce the parasitic parameters of the photoelectric detector and improve the bandwidth of the photoelectric detector.
Description
Technical Field
The application relates to the technical field of photoelectric detection, in particular to a photoelectric detector based on surface contact, a chip and a silicon-based photon chip.
Background
The silicon-based photon chip is compatible with a standard semiconductor process, has the advantages of low cost and high integration level, and is widely used in the industry. In the field of optical communications, a waveguide-type silicon germanium photodetector is generally used at the receiving end of a silicon-based photonic chip.
The current waveguide-type germanium-silicon photoelectric detector mainly adopts a square structure, light enters from one end, passes through a germanium absorption layer and exits from the other end, the structure can lead to stronger light intensity at the incident end and weaker light intensity at the exiting end, and photon-generated carriers generated in the germanium absorption layer are unevenly distributed in space, so that the linearity of the photoelectric detector is reduced.
Disclosure of Invention
The application provides a photoelectric detector based on surface contact, a photoelectric detector chip and a silicon-based photon chip, which effectively solve the technical problem that photon-generated carriers generated in a germanium absorption layer of a waveguide-type germanium-silicon photoelectric detector in the prior art are unevenly distributed in space so as to reduce the linearity of the photoelectric detector.
According to an aspect of the present application, there is provided a surface contact-based photodetector comprising:
a first waveguide and a second waveguide spaced apart by a predetermined distance; the first waveguide is used for receiving incident light and coupling the received incident light into the second waveguide; the shape of the second waveguide is annular;
a substrate layer for doping;
a first doped region formed by doping in a set region of the substrate layer;
the annular light absorption layer is positioned on the surface of the first doping region and is seamlessly adjacent to the inner wall of the second waveguide, and is used for receiving the optical signal transmitted by the second waveguide, and enabling the received optical signal to travel back and forth in the annular light absorption layer so as to generate total reflection to form resonance, and the refractive index of the annular light absorption layer is larger than that of the second waveguide;
and the second doped region is doped and diffused into the annular light absorbing layer from the surface of the annular light absorbing layer.
Alternatively, the shape of the perpendicular projection of the annular light absorbing layer on the substrate layer includes an elliptical ring, a circular ring, a square ring, a racetrack ring, an Oval ring, or a curved convex triangular ring.
Optionally, the ratio of the annular light absorbing layer to the second waveguide is 0.1-10.
Optionally, the annular light absorbing layer has an annular width ranging from 0.1 μm to 1.6 μm.
Optionally, the shape of the second doped region perpendicularly projected on the substrate layer is concentric with the shape of the annular light absorbing layer perpendicularly projected on the substrate layer, and the shapes of the two projections are identical or partially identical.
Optionally, the photodetector provided in this embodiment further includes: a first electrode and a second electrode;
the first electrode is positioned on the surface of the first doped region;
the second electrode is positioned on the surface of the second doped region.
Optionally, the shape of the second electrode perpendicularly projected on the substrate layer is concentric with the shape of the second doped region perpendicularly projected on the substrate layer, and the shape of the second electrode perpendicularly projected on the substrate layer is identical or partially identical to the shape of the second doped region perpendicularly projected on the substrate layer.
Optionally, the material of the substrate layer includes silicon, silicon dioxide, silicon nitride or lithium niobate;
the material of the first waveguide comprises silicon, silicon dioxide, silicon nitride or lithium niobate;
the material of the second waveguide comprises silicon, silicon dioxide, silicon nitride or lithium niobate;
the annular light absorbing layer is made of germanium, germanium arsenide or gallium arsenide;
the material of the first doped region comprises boron ions or gallium ions;
the material of the second doped region comprises phosphorus ions or arsenic ions.
According to another aspect of the present application, there is provided a surface contact-based photodetector chip comprising a plurality of photodetectors provided in any of the embodiments of the present application.
According to another aspect of the present application, a silicon-based photonic chip is provided, and a receiving end of the silicon-based photonic chip is a plurality of photodetectors provided in any embodiment of the present application.
The first waveguide in the photoelectric detector can couple the received incident light into the second waveguide, the second waveguide is annular in shape, the annular light absorbing layer is seamlessly adjacent to the inner wall of the second waveguide, the refractive index of the annular light absorbing layer is larger than that of the second waveguide, the annular light absorbing layer can receive the optical signal in the second waveguide, and the optical signal in the annular light absorbing layer can form a resonance mode during propagation, so that the optical signal is uniformly distributed in the annular light absorbing layer, the received optical signal is completely converted into electrons and holes, the photoelectric conversion rate of the optical signal is improved, and the linearity of the photoelectric detector is improved. In addition, the annular light absorbing layer is arranged to be annular, and meanwhile, the refractive index of the annular light absorbing layer is larger than that of the second waveguide, so that light can be transmitted back and forth in the annular light absorbing layer until an optical signal in the annular light absorbing layer is completely converted into electrons and holes, therefore, the quantity of the converted electrons and holes can be improved by improving the intensity of incident light of the photoelectric detector, the photoelectric conversion efficiency is improved without increasing the absorption area through the annular light absorbing layer, the size of the photoelectric detector can be made smaller, parasitic parameters of the photoelectric detector are reduced, and the bandwidth of the photoelectric detector is improved. In summary, the photoelectric detector provided in this embodiment can improve the linearity of the photoelectric detector, also can reduce the parasitic parameter of the photoelectric detector, improves the bandwidth of the photoelectric detector, and effectively solves the technical problem that the photo-generated carriers generated in the germanium absorption layer of the waveguide-type germanium-silicon photoelectric detector in the existing scheme are unevenly distributed in space so as to reduce the linearity of the photoelectric detector.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the application or to delineate the scope of the application. Other features of the present application will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic top view of a surface contact-based photodetector according to an embodiment of the present application;
FIG. 2 is a schematic view of the structure of a face contact-based photodetector taken along section line A1A2 in FIG. 1;
FIG. 3 is a schematic view of the structure of the surface contact-based photodetector taken along section line B1B2 in FIG. 1;
FIG. 4 is a schematic diagram of a simulation of the light field distribution of a surface contact-based photodetector according to an embodiment of the present application;
FIG. 5 is a schematic illustration of a simulation of the light field distribution of yet another face contact based photodetector provided in accordance with the present embodiment;
FIG. 6 is a schematic top view of a further surface contact based photodetector according to an embodiment of the application;
FIG. 7 is a schematic diagram of a simulation of the light field distribution of the photodetector shown in FIG. 6;
FIG. 8 is a schematic top view of a further surface contact based photodetector according to an embodiment of the application;
FIG. 9 is a schematic diagram of a simulation of the light field distribution of yet another face contact based photodetector provided in accordance with an embodiment of the present application;
FIG. 10 is a schematic diagram of a simulation of the light field distribution of yet another face contact based photodetector provided in accordance with the present embodiment;
FIG. 11 is a schematic top view of a further surface contact-based photodetector according to an embodiment of the application;
FIG. 12 is a schematic illustration of a simulation of the light field distribution of yet another face contact based photodetector provided in accordance with the present embodiment;
FIG. 13 is a schematic top view of a further surface contact-based photodetector according to an embodiment of the application;
fig. 14 is a schematic diagram of a simulation of light field distribution of yet another surface contact-based photodetector provided in accordance with the present embodiment.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic top view of a surface contact-based photodetector according to an embodiment of the present application, fig. 2 is a schematic top view of the surface contact-based photodetector taken along a section line A1A2 in fig. 1, fig. 3 is a schematic top view of the surface contact-based photodetector taken along a section line B1B2 in fig. 1, and referring to fig. 1 to fig. 3, the surface contact-based photodetector according to the present embodiment includes: a first waveguide 1, a second waveguide 2, a substrate layer 3, a first doped region 4, an annular light absorbing layer 5, and a second doped region 6; a preset distance is reserved between the first waveguide 1 and the second waveguide 2; the first waveguide 1 is for receiving incident light and coupling the received incident light into the second waveguide 2; the shape of the second waveguide 2 is annular; the substrate layer 3 is used for doping; the first doped region 4 is formed by doping in a set region of the substrate layer 3; the annular light absorption layer 5 is positioned on the surface of the first doped region 4 and is seamlessly adjacent to the inner wall of the second waveguide 2; the annular light absorbing layer 5 is used for receiving the optical signal transmitted by the second waveguide 2, and enabling the received optical signal to travel back and forth in the annular light absorbing layer 5 so as to generate total reflection to form resonance, and the refractive index of the annular light absorbing layer 5 is larger than that of the second waveguide 2; the second doped region 6 is doped and diffused from the surface of the annular light absorbing layer 5 into the annular light absorbing layer 5.
Specifically, in this embodiment, the preset distance between the first waveguide 1 and the second waveguide 2 is related to the width of the first waveguide 1, the width of the second waveguide 2, and the wavelength of the incident light entering the first waveguide 1, and in practical application, the preset distance may be set according to the actual requirement, so that the incident light entering the first waveguide 1 may be coupled into the second waveguide 2, and meanwhile, the problem of over-coupling between the first waveguide 1 and the second waveguide 2 may not be caused.
In the present application, the second waveguide 2 is generally in a shape of uniform ring width, that is, the ring width of each region of the second waveguide 2 is a constant value; however, the solution of the present application still includes the case that the ring width of the adjacent region in the second waveguide 2 is within 10% for the requirement of mass production or unavoidable errors in the industrialization process, or the error between the widest part of the ring width and the smallest part of the ring width in the second waveguide 2 is within 10%; optimally, the adjacent areas with unequal widths adopt a smooth transition mode, so that the propagation of optical signals is influenced to the smallest extent possible, and of course, as an alternative implementation mode, the annular width of the second waveguide 2 can be gradually increased along the annular structure, can be increased and then reduced along the annular structure, and can also be the difference between the annular widths at different positions fluctuates within the range of 0-10%, and meanwhile, the adjacent areas with unequal annular widths adopt a smooth transition mode.
In the same way, in the present application, the annular light absorbing layer 5 is generally in a shape of uniform annular width, that is, the annular width of each region of the annular light absorbing layer 5 is a constant value; however, the solution of the present application still includes the case that the ring width of the adjacent area in the annular light absorbing layer 5 has an error within 10% or the error between the widest part of the ring width and the smallest part of the ring width in the annular light absorbing layer 5 is within 10% for the purpose of mass production or unavoidable errors in the industrialization process; optimally, the adjacent areas with unequal widths adopt a smooth transition mode, so that the propagation of optical signals is influenced to the smallest extent possible, and of course, as an alternative implementation mode, the annular width of the annular light absorbing layer 5 can be gradually increased along the annular structure, can be increased and then reduced along the annular structure, and can also be the difference between the annular widths of different positions fluctuates within the range of 0-10%, and meanwhile, the adjacent areas with unequal annular widths adopt a smooth transition mode.
The working principle of the photoelectric detector provided by the embodiment is as follows: the incident light is first propagated into the first waveguide 1, then is indirectly coupled from the first waveguide 1 into the second waveguide 2, the optical signal in the second waveguide 2 propagates into the annular light absorbing layer 5 through the inner wall of the second waveguide 2, and the optical signal propagates back and forth in the annular light absorbing layer 5, thereby forming resonance in the annular light absorbing layer 5, and generating electrons and holes (i.e., photogenerated carriers), which enter the first doped region 4 and the second doped region 6, respectively. Wherein electrons or holes entering the first doped region 4 are collected by the first electrode 7 on the first doped region 4, and holes or electrons entering the second doped region 6 are collected by the second electrode 8 on the second doped region 6, thereby realizing a photoelectric conversion function. It is noted here that when the first doped region 4 absorbs electrons, the second doped region 6 absorbs holes; when the first doped region 4 absorbs holes, the second doped region 6 absorbs electrons.
With continued reference to fig. 2 or 3, the sides of the substrate layer 3 may be seamlessly adjacent to the inner walls of the second waveguide 2. The material of the substrate layer 3 may be the same as or different from that of the second waveguide 2, and when the material of the substrate layer 3 is the same as that of the second waveguide 2, the substrate layer 3 may be integrally formed with the second waveguide 2, or may be respectively provided and connected in a seamless fit manner. Continuing, the first doped region 4 is formed by doping a set region of the substrate layer 3 with ions of a certain type, and the set region may be the entire upper surface of the substrate layer 3, i.e. the first doped region 4 may cover the upper surface of the substrate layer 3, and of course, the set region may also be a part of the upper surface of the substrate layer 3, where the first doped region 4 covers a part of the corresponding surface of the substrate layer 3. In the present application, the thickness of the first doped region 4 is less than or equal to the thickness of the substrate layer 3, where it is noted that the thicknesses of the first doped regions 4 in different regions may not be completely equal, or the thicknesses of the first doped regions 4 in different regions may be completely equal, and may be specifically set according to practical requirements. Continuing, doping at least part of the surface of the annular light absorbing layer 5 with another type of ions may form a second doped region 6, wherein the thickness of the second doped region 6 is smaller than that of the annular light absorbing layer 5, and the thicknesses of the second doped regions 6 at different positions may likewise not be completely equal or completely equal, and may be specifically set according to practical requirements. The first doped region 4 is doped with ion speciesThe species is different from the species of ions doped by the second doped region 6. The species here are different in the sense of chemical nature, e.g. N is used for the first doped region 4 - The second doped region 6 adopts P + Doping; conversely, if the second doped region 6 employs N - The first doped region 4 adopts P + And (5) doping.
In this embodiment, the annular light absorbing layer 5 is disposed inside the second waveguide 2, and the side surface of the annular light absorbing layer 5 is disposed adjacent to the inner wall of the second waveguide 2, and meanwhile, the refractive index of the annular light absorbing layer 5 is greater than that of the second waveguide 2, so that the light signal propagating to the annular light absorbing layer 5 through the second waveguide 2 propagates back and forth in the annular light absorbing layer 5, and cannot be propagated back to the second waveguide 2 again, leakage of the light signal propagating to the annular light absorbing layer 5 is effectively avoided, and the light signal is totally reflected in the annular light absorbing layer 5, so that resonance is formed, the light signal entering the annular light absorbing layer 5 is converted into an electrical signal to the highest extent, and is not consumed by leakage to cause ineffective consumption of part of the light signal, further, light field in the annular light absorbing layer 5 is ensured to be distributed relatively uniformly, photoelectric conversion rate of the received light signal by the photoelectric detector is improved, and linearity of the photoelectric detector is further improved.
In addition, the annular light absorbing layer 5 is annular, the refractive index of the annular light absorbing layer 5 is larger than that of the second waveguide 2, so that an optical signal can be transmitted back and forth in the annular light absorbing layer 5 for many times until the optical signal is completely converted into an electron hole, and high photoelectric conversion efficiency is effectively ensured. It should be noted that, the smaller size of the annular light absorbing layer 5 in this embodiment means that the outer annular radius of the annular light absorbing layer 5 is smaller.
In summary, this embodiment provides a photodetector, where a first waveguide in the photodetector may couple incident light received by the first waveguide into a second waveguide, the second waveguide is annular in shape, an annular light absorbing layer is seamlessly adjacent to an inner wall of the second waveguide, and meanwhile, a refractive index of the annular light absorbing layer is set to be greater than that of the second waveguide, and the annular light absorbing layer may receive an optical signal in the second waveguide, and make the received optical signal reciprocally propagate in the annular light absorbing layer, so that the optical signal in the annular light absorbing layer forms a resonant mode during propagation, thereby making the optical signal relatively uniformly distributed in the annular light absorbing layer, and further converting the received optical signal into electrons and holes completely, improving a photoelectric conversion rate of the optical signal, and improving linearity of the photodetector. In addition, in the present embodiment, the cross-sectional shape of the light absorbing layer is set to be annular, and at the same time, the refractive index of the annular light absorbing layer is set to be larger than that of the second waveguide, so that light can be circulated back and forth in the annular light absorbing layer until the light signal in the annular light absorbing layer is completely converted into electrons and holes, and therefore, the amount of converted electrons and holes can be increased by increasing the intensity of incident light, and thus, the amount of converted electrons and holes does not need to be increased by increasing the absorption area of the annular light absorbing layer, and therefore, the size of the photodetector can be made smaller, thereby reducing the parasitic parameters of the photodetector, and improving the bandwidth of the photodetector based on surface contact. In summary, the surface contact-based photoelectric detector provided in this embodiment can improve the linearity of the photoelectric detector, also can reduce the parasitic parameters of the photoelectric detector, improves the bandwidth of the photoelectric detector, and effectively solves the technical problem that the photo-generated carriers generated in the germanium absorption layer of the waveguide-type germanium-silicon photoelectric detector in the existing scheme are unevenly distributed in space so as to reduce the linearity of the photoelectric detector.
Optionally, the shape of the vertical projection of the annular light absorbing layer on the substrate layer includes an elliptical ring shape, a circular ring shape, a square ring shape or a racetrack ring shape, so that the uniformity of light field distribution in the annular light absorbing layer can be ensured, and higher linearity of the photoelectric detector can be further ensured. The shape of the perpendicular projection of the annular light absorbing layer on the substrate layer may also be other closed rings that enable light to travel back and forth in the annular light absorbing layer.
Alternatively, with continued reference to fig. 2 or 3, the shape of the second doped region 6 projected perpendicularly onto the substrate layer 3 matches the shape of the annular light absorbing layer 5 projected perpendicularly onto the substrate layer 3, where it is noted that the shape matching here may include the second doped region 6 projected perpendicularly onto the substrate layer 3 being concentric with the geometric center, and the two projected shapes being identical or partially identical, and, for example, when the shape of the annular light absorbing layer 5 projected perpendicularly onto the substrate layer 3 is a closed circular ring shape, the shape of the second doped region 6 projected perpendicularly onto the substrate layer 3 may be a closed circular ring shape centered on the center of the annular light absorbing layer 5, or may be a closed circular ring shapeWhere n is an integer, n may be 2, 3, 4, or 5, as examples, and may or may not be an integer. When the shape of the vertical projection of the annular light absorbing layer 5 on the substrate layer 3 is a closed elliptical ring, the shape of the vertical projection of the second doped region 6 on the substrate layer 3 may be a closed elliptical ring, or may be an elliptical ring with the center of the annular light absorbing layer 5 as the center of the ellipse->Where m may be an integer, the perpendicular projection of the second doped region 6 onto the substrate layer 3 is geometrically concentric with the perpendicular projection of the annular light absorbing layer 5 onto the substrate layer 3. Similarly, when the shape of the vertical projection of the annular light absorbing layer 5 on the substrate layer 3 is a closed square ring, the shape of the vertical projection of the second doped region 6 on the substrate layer 3 may be a closed square ring, or may be a square ring with the center of the annular light absorbing layer 5 as ∈ ->Wherein h may be an integer, and n, m, and h may be the same or different. The present embodiment provides the second doped region 6 inThe shape of the vertical projection on the substrate layer 3 is matched with the shape of the vertical projection of the annular light absorbing layer 5 on the substrate layer 3, so that light signals can be transmitted in the annular light absorbing layer 5, electrons or holes in the annular light absorbing layer 5 can be quickly received by the second doped region 6, and the photoelectric conversion efficiency of the photoelectric detector can be improved.
Optionally, with continued reference to fig. 2 or 3, the photodetector provided in this embodiment further includes a first electrode 7 and a second electrode 8; the first electrode 7 is positioned on the surface of the first doped region 4; the second electrode 8 is located on the surface of the second doped region 6.
Specifically, the first electrode 7 may collect electrons or holes in the first doped region 4, and the second electrode 8 may collect electrons or holes in the second doped region 6. The vertical projection of the first electrode 7 onto the substrate layer 3 falls within the range of the vertical projection of the first doped region 4 onto the substrate layer 3; similarly, the vertical projection of the second electrode 8 onto the substrate layer 3 falls within the range of the vertical projection of the second doped region 6 onto the substrate layer 3. It is pointed out here that the vertical projection of the first electrode 7 onto the substrate layer 3 falls within the range of the vertical projection of the first doped region 4 onto the substrate layer 3, including not only that the area of the vertical projection of the first electrode 7 onto the substrate layer 3 is smaller than the area of the vertical projection of the first doped region 4 onto the substrate layer 3, but also that the two areas are the same; similarly, the vertical projection of the second electrode 8 on the substrate layer 3 falls within the range of the vertical projection of the second doped region 6 on the substrate layer 3, which includes not only that the area of the vertical projection of the second electrode 8 on the substrate layer 3 is smaller than the area of the vertical projection of the second doped region 6 on the substrate layer 3, but also that the two areas are the same, and also that the projection sizes of the two areas are the same, and the areas are completely overlapped. Optionally, with continued reference to fig. 2 or fig. 3, the shape of the second electrode 8 perpendicularly projected on the substrate layer 3 is matched with the shape of the second doped region 6 perpendicularly projected on the substrate layer 3, that is, the second electrode 8 perpendicularly projected on the substrate layer 3 and the second doped region 6 perpendicularly projected on the substrate layer 3 are concentric, and the shape of the second electrode 8 perpendicularly projected on the substrate layer 3 and the shape of the second doped region 6 perpendicularly projected on the substrate layer 3 are identical or partially identical, and the shape of the second electrode 8 perpendicularly projected on the substrate layer 3 and the shape of the second doped region 6 perpendicularly projected on the substrate layer 3 are matched, so that the efficiency of the second electrode 8 for collecting electrons or holes in the second doped region 6 can be improved, thereby improving the photoelectric conversion efficiency of the photoelectric detector.
Optionally, the material of the substrate layer comprises silicon, silicon dioxide, silicon nitride or lithium niobate; the material of the first waveguide comprises silicon, silicon dioxide, silicon nitride or lithium niobate; the material of the second waveguide comprises silicon, silicon dioxide, silicon nitride or lithium niobate; the annular light absorbing layer is made of germanium, germanium arsenide or gallium arsenide, so that a silicon germanium photoelectric detector can be formed, other types of photoelectric detectors can be formed, and the annular light absorbing layer has different absorptivity or photoelectric conversion rate on the basis of different materials.
Optionally, the material of the first doped region includes boron ions or gallium ions; the material of the second doped region comprises phosphorus ions or arsenic ions, which are arranged such that the first doped region absorbs holes in the annular light absorbing layer and the second doped region absorbs electrons in the annular light absorbing layer.
Alternatively, the ratio of the annular light absorbing layer to the second waveguide is 0.1 to 10.
Specifically, the ratio of the annular width of the annular light absorbing layer to the annular width of the second waveguide may be any one of 0.1 to 10, specifically, the ratio is related to the wavelength of the incident light and the distance between the first waveguide and the second waveguide, and the ratio of the annular width of the annular light absorbing layer to the annular width of the second waveguide is set to be 0.1 to 10, so that the uniformity of the light field distribution in the annular light absorbing layer can be ensured, and the linearity of the photodetector is improved.
Alternatively, the annular light absorbing layer has an annular width ranging from 0.1 μm to 1.6 μm.
Specifically, the annular light absorbing layer may have an annular width of any value from 0.1 μm to 1.6 μm, and the annular light absorbing layer may have an annular width of from 0.1 μm to 1.6 μm, so that uniformity of light field distribution in the annular light absorbing layer may be ensured, and linearity of the photodetector may be further ensured. Meanwhile, the size of the annular light absorbing layer is ensured to meet the process requirement, and mass production can be performed under the existing process condition.
In order to further understand the photodetector provided in this embodiment, a specific photodetector is described below as an example:
specific example 1:
the structural parameters of the face contact based photodetector are defined as: the first waveguide 1 has a width wg1_width and a height wg1_height; the second waveguide 2 has a ring width (distance between a point on the inner wall and a corresponding point on the outer wall, wherein the point of the inner wall is on the outer wall radius where the point on the corresponding outer wall is located) wg2_width, a height wg2_height, an inner wall radius r1, and an outer wall radius r1+wg2_width; the distance between the first waveguide 1 and the second waveguide 2 is gap; the thickness of the substrate layer 3 is wg3_height; the annular light absorbing layer 5 has a ring width of ge_width, a height of ge_height, and an inner ring radius of r2=r1-ge_width. The second waveguide 2 and the annular light absorbing layer 5 are both of a fixed annular width.
Fig. 4 is a schematic diagram of a simulation of the light field distribution of a surface contact-based photodetector according to an embodiment of the present application, and fig. 5 is a schematic diagram of a simulation of the light field distribution of a further photodetector according to the present embodiment, where the shape of the second waveguide 2 and the shape of the annular light absorbing layer 5 of the corresponding photodetectors of fig. 4 and 5 are both annular (the specific structure may be the structure shown in fig. 1). As an alternative specific embodiment, the structural parameters of the photodetectors corresponding to fig. 4 and 5 are: wg1_width=0.4 μm; wg1_height=0.18 μm; wg2_width=0.4 μm; wg2_height=0.18 μm, r1=2.9 μm; gap=0.1 μm; wg3_height=0.02 μm; ge_height=0.16 μm; the wavelength of incident light is 1565nm. As can be seen from fig. 4 and 5, the light field distribution of the annular light absorbing layer 5 in the surface contact-based photodetector and the annular light absorbing layer 5 in the photodetector corresponding to fig. 5 is relatively uniform, as is apparent from fig. 4 and 5, where ge_width=0.6 μm, r2=2.3 μm and ge_width=1 μm and r2=1.9 μm for the surface contact-based photodetector corresponding to fig. 5. As a specific example, in the process of changing ge_width from 0.6 μm in fig. 4 to 1 μm in fig. 5, the light field distribution of the annular light absorbing layer 5 is uniform, so that the light field distribution in the annular light absorbing layer 5 is uniform and the photodetector has better linearity within the annular wide range of the annular light absorbing layer 5 required by the present application.
Specific example 2:
fig. 6 is a schematic top view of another surface contact-based photodetector according to an embodiment of the present application, and referring to fig. 6, the surface contact-based photodetector according to the present embodiment is different from the surface contact-based photodetector of the first example in that: the shape of the second waveguide 2 and the shape of the vertical projection of the annular light absorbing layer 5 on the substrate layer 3 in the surface contact-based photodetector provided in this embodiment are both elliptical rings. Wherein the semi-major axis of the outer wall of the elliptical ring-shaped second waveguide 2 is 3.5 μm, the semi-minor axis of the outer wall is 3.3 μm, and the ring width is 0.4 μm. The semi-major axis of the outer wall of the elliptical ring-shaped light absorbing layer 5 was 3.1 μm, the semi-minor axis of the outer wall was 2.9 μm, and the ring width was 0.8 μm; the incident light wavelength was 1572nm. Fig. 7 is a schematic diagram of the simulation of the light field distribution of the surface contact-based photodetector shown in fig. 6, and it can be seen from fig. 7 that the light field distribution in the annular light absorbing layer 5 is relatively uniform. It can be seen that, the shape of the second waveguide 2 and the shape of the annular light absorbing layer 5 are both elliptical, so that the optical signal is limited to be transmitted back and forth in the annular light absorbing layer 5, and further the optical signal can form a resonant mode in the annular light absorbing layer 5, so that the uniformity of the optical field in the annular light absorbing layer 5 is improved, the spatial distribution of the photo-generated carriers in the annular light absorbing layer 5 is ensured to be uniform, and the linearity of the surface contact-based photodetector is improved. On the other hand, if the photoelectric conversion current of the annular light absorbing layer 5 with the elliptical annular structure needs to be improved, only the light intensity of the incident light needs to be improved, and the size of the annular light absorbing layer 5 does not need to be improved.
Specific example 3:
fig. 8 is a schematic top view of another surface contact-based photodetector according to an embodiment of the present application, and referring to fig. 8, the surface contact-based photodetector according to the present embodiment differs from the surface contact-based photodetector of the first example in that: the shape of the second waveguide 2 and the shape of the vertical projection of the shape of the annular light absorbing layer 5 on the substrate layer 3 in the surface contact-based photodetector provided in this embodiment are both square and circular. Fig. 9 is a schematic diagram of a simulation of the optical field distribution of a further photodetector according to an embodiment of the present application, fig. 10 is a schematic diagram of a simulation of the optical field distribution of a further photodetector according to the present embodiment, the shape of the second waveguide 2 and the shape of the annular light absorbing layer 5 of the surface contact-based photodetector corresponding to fig. 9 and 10 are both square-circular (the specific structure may be the structure shown in fig. 8), ge_width=0.3 μm of the annular light absorbing layer 5 in fig. 9, ge_width=0.4 μm of the annular light absorbing layer 5 in fig. 10, the incident light wavelength of fig. 9 and 10 is 1557nm, and the inner wall curve formulas of the annular light absorbing layer 5 in fig. 9 and 10 are:
wherein a=2, b=2, m=4, n 1 ＝6，n 2 ＝4，n 3 ＝4。
As can be seen from fig. 9 and 10, the light field distribution within the annular light absorbing layer 5 is relatively uniform. Therefore, the shape of the second waveguide 2 and the shape of the annular light absorbing layer 5 are both square and circular, so that the optical signals can be limited in the annular light absorbing layer 5 to be transmitted in an annular mode, the resonant mode formed by the optical signals in the annular light absorbing layer 5 can be improved, the uniformity of the optical field in the annular light absorbing layer 5 is improved, the uniform spatial distribution of the photo-generated carriers in the annular light absorbing layer 5 is ensured, and the linearity of the photoelectric detector is improved. On the other hand, the annular light absorbing layer 5 of the square and round annular structure does not need to be large in size due to the fact that higher photoelectric conversion current is needed, so that the size of the photoelectric detector based on surface contact can be smaller, parasitic parameters of the photoelectric detector can be reduced, and the bandwidth of the photoelectric detector can be improved.
Example 4
Fig. 11 is a schematic top view of another surface contact-based photodetector according to an embodiment of the present application, and referring to fig. 11, the surface contact-based photodetector according to the present embodiment is different from the first embodiment in that: the shape of the second waveguide 2 and the shape of the perpendicular projection of the annular light absorbing layer 5 on the substrate layer 3 in the surface contact-based photodetector provided in this embodiment are both oval (oval). The outer ring of the annular second waveguide 2 is formed of four circular arcs having outer radii of 3.3 μm, 2.3 μm, 6.72 μm and 6.72 μm, respectively, an annular width of 0.4 μm, and an annular width of 0.3 μm of the annular light absorbing layer 5; the wavelength of incident light is 1591nm.
Fig. 12 is a schematic diagram of a simulation of the light field distribution of the surface contact-based photodetector shown in fig. 11, and it can be seen from fig. 12 that the light field distribution in the annular light absorbing layer 5 is relatively uniform. It can be seen that, the shape of the second waveguide 2 and the shape of the annular light absorbing layer 5 are both set to be an ovil shape, so that the optical signal can be limited in the annular light absorbing layer 5 to be transmitted in an annular manner, the resonant mode formed by the optical signal in the annular light absorbing layer 5 can be improved, the uniformity of the optical field in the annular light absorbing layer 5 is improved, the uniform spatial distribution of the photo-generated carriers in the annular light absorbing layer 5 is ensured, and the linearity of the photodetector is improved. On the other hand, the annular light absorbing layer 5 with the oval structure does not need to be large in size due to the fact that higher photoelectric conversion current is needed, so that the size of the photoelectric detector can be smaller, parasitic parameters of the photoelectric detector can be reduced, and the bandwidth of the photoelectric detector can be improved.
Example 5
Fig. 13 is a schematic top view of another surface contact-based photodetector according to an embodiment of the present application, and referring to fig. 13, in the surface contact-based photodetector according to the present embodiment, the shape of the second waveguide 2 and the shape of the vertical projection of the annular light absorbing layer 5 on the substrate layer 3 are both curved convex triangle and annular shapes, that is, the vertical projections of the outer ring of the second waveguide 2 and the annular light absorbing layer 5 and the inner ring thereof on the substrate layer 3 are both curved convex triangles, wherein the curved convex triangle includes three curves, and at least one curve is a curved convex curve. When the shape of the vertical projection of the annular light absorbing layer 5 on the substrate layer is a curved convex triangle ring shape, the inner ring curve formula of the annular light absorbing layer 5 is:
in this embodiment, the corresponding structural parameters of the curved triangular annular light absorbing layer 5 are a=1.8, b=1.8, m=3, n1=2, n2=3, n3=3, the annular width is 0.3 μm, and the annular width of the second waveguide 2 is 0.4 μm; the wavelength of incident light is 1591nm.
Fig. 14 is a schematic diagram of the light field distribution of the surface contact-based photodetector according to the present embodiment, and it can be seen from fig. 14 that the light field distribution in the annular light absorbing layer 5 is relatively uniform. Therefore, the shape of the second waveguide 2 and the shape of the annular light absorbing layer 5 are both set to be in a curve convex triangle annular shape, and optical signals can be limited in the annular light absorbing layer 5 to be transmitted in an annular mode, so that the optical signals form a resonance mode in the annular light absorbing layer 5, the uniformity of an optical field in the annular light absorbing layer 5 is improved, the uniform spatial distribution of photo-generated carriers in the annular light absorbing layer 5 is ensured, and the linearity of the surface contact-based photoelectric detector is improved. On the other hand, the annular light absorbing layer 5 with the curve convex triangle annular structure does not need to be large in size due to the fact that higher photoelectric conversion current is needed, so that the size of the photoelectric detector can be smaller, parasitic parameters of the photoelectric detector are reduced, and the bandwidth of the photoelectric detector is improved.
The embodiment also provides a surface contact-based photoelectric detector chip, which comprises a plurality of the surface contact-based photoelectric detectors provided by any embodiment of the application.
In this embodiment, the surface contact-based photo-detector chip may be formed by a plurality of surface contact-based photo-detectors provided in the present application, where the plurality of surface contact-based photo-detectors are arranged in a preset manner and are prepared into a surface contact-based photo-detector chip by a semiconductor integration process, where the preset manner may be a row, and the distance between two adjacent surface contact-based photo-detectors is set according to actual requirements, and of course, the preset manner may also be an array arrangement.
Specifically, since the surface contact-based photodetector provided by any embodiment of the present application has higher linearity and wider bandwidth, the surface contact-based photodetector chip provided by the present embodiment has higher linearity and wider bandwidth.
The embodiment also provides a silicon-based photon chip, and the receiving end of the silicon-based photon chip is provided with a plurality of the photoelectric detectors based on surface contact provided by any embodiment of the application. Specifically, since the surface contact-based photodetector provided by any embodiment of the present application has higher linearity and wider bandwidth, the receiving end of the silicon-based photonic chip provided by the embodiment also has higher linearity and wider bandwidth.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present application may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present application are achieved, and the present application is not limited herein.
The above embodiments do not limit the scope of the present application. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the scope of the present application.
Claims (10)
1. A face contact based photodetector comprising:
a first waveguide and a second waveguide spaced apart by a predetermined distance; the first waveguide is used for receiving incident light and coupling the received incident light into the second waveguide; the shape of the second waveguide is annular;
a substrate layer for doping;
a first doped region formed by doping in a set region of the substrate layer;
the annular light absorption layer is positioned on the surface of the first doping region and is seamlessly adjacent to the inner wall of the second waveguide, and is used for receiving the optical signal transmitted by the second waveguide, and enabling the received optical signal to travel back and forth in the annular light absorption layer so as to generate total reflection to form resonance, and the refractive index of the annular light absorption layer is larger than that of the second waveguide;
and the second doped region is doped and diffused into the annular light absorbing layer from the surface of the annular light absorbing layer.
2. The photodetector of claim 1 wherein the shape of the perpendicular projection of the annular light absorbing layer onto the substrate layer comprises an elliptical ring, a circular ring, a square ring, a racetrack ring, an Oval ring, or a curvilinear convex triangular ring.
3. The photodetector of claim 1 wherein the ratio of the annular light absorbing layer annular width to the second waveguide annular width is from 0.1 to 10.
4. The photodetector of claim 1 wherein the annular light absorbing layer has an annular width in the range of 0.1 μm to 1.6 μm.
5. The photodetector of claim 1 wherein the shape of the second doped region projected perpendicularly onto the substrate layer is concentric with the shape of the annular light absorbing layer projected perpendicularly onto the substrate layer, and the shape of both projections is identical or partially identical.
6. The photodetector of claim 1, further comprising: a first electrode and a second electrode;
the first electrode is positioned on the surface of the first doped region;
the second electrode is positioned on the surface of the second doped region.
7. The photodetector of claim 6 wherein the shape of the second electrode projected perpendicularly onto the substrate layer is concentric with the shape of the second doped region projected perpendicularly onto the substrate layer, and the shape of the second electrode projected perpendicularly onto the substrate layer is identical or partially identical to the shape of the second doped region projected perpendicularly onto the substrate layer.
8. The photodetector of claim 1 wherein the material of the substrate layer comprises silicon, silicon dioxide, silicon nitride, or lithium niobate;
the material of the first waveguide comprises silicon, silicon dioxide, silicon nitride or lithium niobate;
the material of the second waveguide comprises silicon, silicon dioxide, silicon nitride or lithium niobate;
the annular light absorbing layer is made of germanium, germanium arsenide or gallium arsenide;
the material of the first doped region comprises boron ions or gallium ions;
the material of the second doped region comprises phosphorus ions or arsenic ions.
9. A surface contact based photodetector chip comprising a plurality of surface contact based photodetectors according to any one of claims 1 to 8.
10. A silicon-based photonic chip, characterized in that the receiving end of the silicon-based photonic chip is a plurality of the surface contact-based photodetectors according to any one of claims 1 to 8.
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