WO2020103396A1 - Waveguide-type photoelectric detector and manufacturing method therefor - Google Patents

Waveguide-type photoelectric detector and manufacturing method therefor

Info

Publication number
WO2020103396A1
WO2020103396A1 PCT/CN2019/083948 CN2019083948W WO2020103396A1 WO 2020103396 A1 WO2020103396 A1 WO 2020103396A1 CN 2019083948 W CN2019083948 W CN 2019083948W WO 2020103396 A1 WO2020103396 A1 WO 2020103396A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
silicon
waveguide
photoelectric conversion
conversion layer
Prior art date
Application number
PCT/CN2019/083948
Other languages
French (fr)
Chinese (zh)
Inventor
汪巍
方青
余明斌
Original Assignee
上海新微技术研发中心有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海新微技术研发中心有限公司 filed Critical 上海新微技术研发中心有限公司
Publication of WO2020103396A1 publication Critical patent/WO2020103396A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of semiconductor technology, in particular to a waveguide type photodetector and a manufacturing method thereof.
  • Group IV germanium (Ge) detectors are small in size, easy to integrate, low cost, because of their preparation process compatible with Si-based CMOS processes Potential advantages such as high performance are widely used in the fields of optical communication and optical sensing.
  • the wavelength of Ge material is greater than 1.55 ⁇ m, the absorption coefficient drops sharply, which makes the Ge detector unable to meet the application of short-wave infrared and even mid-infrared.
  • GeSn has a large absorption coefficient from short-wave infrared to mid-infrared because its energy band gap decreases with the increase of Sn composition. It is an ideal material for preparing infrared detectors. In recent years, GeSn infrared detectors have received extensive research.
  • the infrared detector based on GeSn has some shortcomings, for example: for a detector with light incident perpendicularly to the absorption layer, there is a problem of mutual restriction between the speed of the photodetector and the quantum efficiency; or, the photodetector The lack of internal gain mechanism leads to a low responsivity of the photodetector.
  • Embodiments of the present application provide a waveguide-type photodetector and a method for manufacturing the same.
  • a waveguide-type photodetector is formed on the surface of an insulating layer of a substrate.
  • the photodetector has a waveguide structure, which can avoid the speed and quantum efficiency of the photodetector.
  • a waveguide-type photodetector including:
  • germanium tin GeSn
  • the silicon photomultiplier region includes: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, wherein the multiplied region Located between the P-type doped region and the N-type doped region.
  • the number of the multiplication regions is more than 2, wherein the P-type doped region is located between the two multiplication regions.
  • the photoelectric conversion layer is located on the surface of the P-type doped region.
  • the photoelectric conversion layer includes an absorption layer and a contact layer on the surface of the absorption layer, wherein the material of the absorption layer is Ge (1-x) Sn x , 0 ⁇ x ⁇ 0.4, the material of the contact layer is P-type doped germanium tin (GeSn).
  • a method for manufacturing a waveguide photodetector including:
  • the material of the photoelectric conversion layer is germanium tin (GeSn), wherein the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through an evanescent wave, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region It is used to amplify the photocurrent.
  • the silicon photomultiplier region includes: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, the multiplied region is located at Between the P-type doped region and the N-type doped region, and the material of the P-type doped region, the multiplication region, and the N-type doped region is silicon.
  • forming the photoelectric conversion layer on at least part of the surface of the silicon photomultiplier region includes:
  • the photoelectric conversion layer is formed on the surface of the P-type doped region.
  • a method for manufacturing a waveguide photodetector including:
  • the material of the conversion layer is germanium tin (GeSn);
  • An N-type doped region is formed in the silicon photomultiplier region, and a multiplied region is formed between the P-type doped region and the N-type doped region.
  • a waveguide-type photodetector is formed on the surface of the insulating layer of the substrate.
  • the photodetector has a waveguide structure, which can avoid the problem of mutual restriction between the speed and quantum efficiency of the photodetector, and is easily integrated with other passive optical devices, and, Since the photodetector has a light spot multiplication region that doubles the current, it has a large photocurrent amplification factor and high sensitivity.
  • FIG. 1 is a schematic perspective view of a waveguide-type photodetector according to Example 1 of the present application
  • Fig. 2 is a schematic cross-sectional view viewed in the direction A-A 'of Fig. 1;
  • FIG. 3 is a schematic diagram of a method of manufacturing a waveguide-type photodetector according to Embodiment 2 of the present application;
  • Example 4 is a cross-sectional view of the device corresponding to each step in Example 2 of the present application;
  • FIG. 5 is a schematic diagram of a method of manufacturing a waveguide-type photodetector according to Example 3 of the present application.
  • FIG. 6 is a cross-sectional view of the device corresponding to each step in Embodiment 3 of the present application.
  • the direction parallel to the main surface of the insulating layer of the substrate is called “transverse”
  • the direction perpendicular to the main surface of the insulating layer of the substrate is called “longitudinal” ".
  • This embodiment provides a waveguide type photodetector.
  • Fig. 1 is a schematic perspective view of a waveguide-type photodetector of this embodiment
  • Fig. 2 is a schematic cross-sectional view viewed in the direction A-A 'of Fig. 1.
  • the waveguide-type photodetector 1 includes:
  • the light transmitted by the silicon waveguide 13 is coupled into the photoelectric conversion layer 15 through the evanescent wave, and a photocurrent is generated in the photoelectric conversion layer 15, and the silicon photomultiplier region 14 may form an avalanche multiplier amplifier, for example, so that the photocurrent amplification.
  • this embodiment compared with traditional III-V and II-VI infrared detectors, since this embodiment uses the Group IV GeSn material as the absorption layer, it can be compatible with the existing CMOS process; in addition, it is compatible with normal incidence Compared with the detector of this embodiment, the photodetector based on the waveguide structure of this embodiment can avoid the problem of mutual restriction between the speed and quantum efficiency of the photodetector, and it is easy to integrate with other passive optical devices; Compared with the traditional photodetector, the separated avalanche photodetector structure has large photocurrent magnification and high sensitivity.
  • the materials of the silicon waveguide 13 and the silicon photomultiplier region 14 are both silicon.
  • the insulating layer 12 may be silicon oxide, for example.
  • the substrate 11 may be silicon, for example.
  • the silicon on insulator can be processed, the top silicon layer of the SOI is processed into a silicon waveguide 13 and a silicon photomultiplier region 14, the buried oxygen layer of the SOI is used as the insulating layer 12, and the SOI Substrate silicon as substrate 11.
  • this embodiment may not be limited to this.
  • bulk silicon may be used as the substrate 11, an insulating layer may be formed on the surface of the bulk silicon as the insulating layer 12, and a silicon material layer may be formed on the surface of the insulating layer 12 by deposition or bonding.
  • the silicon material layer is processed to form a silicon waveguide 13 and a silicon photomultiplier region 14.
  • the silicon photomultiplier region 14 may include: a P-type doped region 141, a multiplied region 142 and an N-type doped region 143 disposed laterally on the surface of the insulating layer 12.
  • the multiplication region 142 is located between the P-type doping region 121 and the N-type doping region 143, and the material of the P-type doping region 141, the multiplication region 142, and the N-type doping region 143 is silicon.
  • the multiplication region 142 may be an intrinsic region, and the N-type doped region 143 may be a heavily doped region.
  • the silicon photomultiplier region 14 can form an avalanche diode.
  • the number of multiplying regions 142 may be more than two.
  • the P-type doped region 141 is located between the two multiplying regions 142, and one N-doping may be formed outside the two multiplying regions 142 respectively.
  • avalanche diodes can be formed on both sides of the P-type doped region 141, thereby improving the current amplification capability.
  • the photoelectric conversion layer 15 may be located on the surface of the P-type doped region 141.
  • the photoelectric conversion layer 15 may include an absorption layer 151 and a contact layer 152 on the surface of the absorption layer 151.
  • the material of the absorber layer 151 is Ge (1-x) Sn x , 0 ⁇ x ⁇ 0.4
  • the absorber layer 151 may be intrinsic Ge (1-x) Sn x
  • the material of the contact layer 152 is P-type Doped germanium tin (GeSn), for example, P-type heavily doped germanium tin.
  • the first electrode 16 may be formed on the surface of the contact layer 152, and the second electrode 17 may also be formed on the surface of the N-type doped region 143 of the photomultiplier region.
  • the first electrode 16 and the second electrode 17 may be the same Or different conductor materials, for example, both the first electrode 16 and the second electrode 17 are aluminum (Al).
  • the silicon waveguide 13 and the silicon photomultiplier region 14 are connected as a whole, and the photoelectric conversion layer 15 is located on the surface of the silicon photomultiplier region 14, whereby light entering the silicon waveguide 13 is transmitted to the silicon photomultiplier through the silicon waveguide 13 Region 14, at the interface between the silicon photomultiplier region 14 and the photoelectric conversion layer 15 is coupled into the photoelectric conversion layer 15 by evanescent waves, and a photocurrent is generated in the photoelectric conversion layer 15, and the photocurrent is amplified through the silicon photomultiplier region 14 and from The second electrode 17 is led out.
  • the Group IV GeSn material is used as the absorption layer, so it can be compatible with the existing CMOS process; in addition, due to the silicon waveguide, the photodetector can avoid the problem of mutual restriction between the photodetector rate and quantum efficiency, And it is easy to integrate with other passive optical devices; in addition, the silicon photomultiplier region of the present application can amplify the photocurrent, thereby improving the sensitivity of the photodetector.
  • Embodiment 2 provides a method for manufacturing a waveguide-type photodetector, which is used to manufacture the waveguide-type photodetector described in Embodiment 1.
  • FIG. 3 is a schematic diagram of the manufacturing method of the waveguide-type photodetector of this embodiment. As shown in FIG. 3, in this embodiment, the manufacturing method may include:
  • Step 301 forming a silicon waveguide and a silicon photomultiplier region on the surface of the insulating layer of the substrate, the silicon photomultiplier region being connected to the end of the silicon waveguide;
  • Step 302 Form a photoelectric conversion layer on at least part of the surface of the silicon photomultiplier region, and the material of the photoelectric conversion layer is germanium tin (GeSn).
  • the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through evanescent waves, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region is used to amplify the photocurrent.
  • the silicon photomultiplier region includes: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, wherein the multiplied region is located in the P-type doped region And the N-type doped region, and the material of the P-type doped region, the multiplication region, and the N-type doped region is silicon.
  • step 302 of this embodiment a selective epitaxy method is used to form the photoelectric conversion layer on the surface of the P-type doped region.
  • a silicon waveguide, a silicon photomultiplier region, and a photoelectric conversion layer are formed in a manufacturing order from bottom to top.
  • the manufacturing method of the waveguide-type photodetector includes the following steps:
  • Step 1 Prepare a silicon waveguide on the top silicon of the SOI substrate by photolithography and dry etching.
  • the end width d1 of the silicon waveguide (as shown in FIG. 1) is 500 nm
  • the end width d2 of the silicon waveguide is 10 ⁇ m.
  • the N-type doped region is also defined by photolithography, and ion implantation and high-temperature annealing are used to prepare the N-type doped region, as shown in (a) of FIG. 4.
  • Step 2 Define the range of the P-type doped region by photolithography, and prepare the P-type doped region by ion implantation and high-temperature annealing, as shown in (b) of FIG. 4.
  • Step 3 The range of the photoelectric conversion layer defined by the hard mask, and the selective epitaxial method is used to grow GeSn as the absorber layer, as shown in (c) of FIG. 4; wherein, the hard mask may be silicon dioxide, for example For example, chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • Step 4 CVD method is used to selectively epitaxially grow P-type doped germanium on the surface of the absorber layer as a P-type doped layer; then deposit a SiO 2 protective layer on the surface of the P-type doped layer and the N-type doped region And define the contact area between the P-type doped layer and the first electrode and the contact area between the N-type doped area and the second electrode through photolithography and etching methods; then deposit metal Al, and form the first through photolithography and etching One electrode and a second electrode, thereby completing device preparation, as shown in (d) of FIG. 4.
  • the Group IV GeSn material is used as the absorption layer, so it can be compatible with the existing CMOS process; in addition, due to the silicon waveguide, the photodetector can avoid the problem of mutual restriction between the photodetector rate and quantum efficiency, And it is easy to integrate with other passive optical devices; in addition, the silicon photomultiplier region of the present application can amplify the photocurrent, thereby improving the sensitivity of the photodetector.
  • Embodiment 3 provides a method for manufacturing a waveguide-type photodetector, which is used to manufacture the waveguide-type photodetector described in Embodiment 1.
  • FIG. 5 is a schematic diagram of the manufacturing method of the waveguide-type photodetector of this embodiment. As shown in FIG. 5, in this embodiment, the manufacturing method may include:
  • Step 501 Form a P-type doped region in the silicon material on the surface of the insulating layer;
  • Step 502 Deposit a photoelectric conversion material on the surface of the silicon material including the P-type doped region, and etch the photoelectric conversion material to expose the silicon material, wherein the remaining photoelectric conversion material forms a photoelectric conversion layer,
  • the material of the photoelectric conversion layer is germanium tin (GeSn);
  • Step 503 etching the exposed silicon material to form a silicon waveguide and a silicon photomultiplier region, the silicon photomultiplier region being connected to the end of the silicon waveguide;
  • Step 504 An N-type doped region is formed in the photomultiplier region, and a multiplier region is formed between the P-type doped region and the N-type doped region.
  • the light transmitted by the silicon waveguide couples into the photoelectric conversion layer through evanescent waves, and generates a photocurrent in the photoelectric conversion layer, and the silicon photomultiplier region is used to amplify the photocurrent.
  • the photoelectric conversion layer, the silicon waveguide, and the silicon photomultiplier region are formed in a manufacturing order from top to bottom.
  • FIG. 6 is a cross-sectional view of the device corresponding to each step in this example.
  • the manufacturing method of the waveguide photodetector includes the following steps:
  • Step 1 Define the range of P-type doped regions on the top silicon layer of the SOI substrate by photolithography, and use ion implantation and high-temperature annealing to form the P-type doped region; adopt the CVD method to epitaxially grow the GeSn absorber layer on the top silicon surface And GeSn P-type doped layer, see (a) of FIG. 6.
  • Step 2 Prepare the mesa of the GeSn absorption region by photolithography and etching, and etch to the top silicon layer, see (b) of FIG. 6.
  • Step 3 Use photolithography and etching to form a silicon waveguide with a waveguide width of 500 nm and a width of the waveguide end of 10 ⁇ m; define the range of the N-type doped region in the photomultiplier region of silicon by photolithography, using ion implantation and high-temperature annealing methods For the preparation of N-type doped regions, see (c) of FIG. 6.
  • Step 4 Deposit a SiO 2 protective layer on the surface of the P-type doped layer on the surface of the absorber layer and the N-type doped region of the silicon photomultiplier region, and define the P-type doped layer and the first electrode by photolithography and etching methods And the contact area of the N-type doped region and the second electrode; then metal Al is deposited, and the first electrode and the second electrode are formed by photolithography and etching, thereby completing device preparation, as shown in FIG. 6 (d ) As shown.
  • the Group IV GeSn material is used as the absorption layer, so it can be compatible with the existing CMOS process; in addition, due to the silicon waveguide, the photodetector can avoid the problem of mutual restriction between the photodetector rate and quantum efficiency, And it is easy to integrate with other passive optical devices; in addition, the silicon photomultiplier region of the present application can amplify the photocurrent, thereby improving the sensitivity of the photodetector.

Abstract

The present application provides a waveguide-type photoelectric detector and a manufacturing method therefor. The waveguide-type photoelectric detector comprises: an insulating layer located on the surface of a substrate; a silicon waveguide located on the surface of the insulating layer; a silicon photomultiplier region located on the surface of the insulating layer and connected to the tail end of the silicon waveguide; and a photoelectric conversion layer located on at least a part of the surface of the silicon photomultiplier region, wherein the material of the photoelectric conversion layer is germanium tin (GeSn), light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer by means of evanescent waves, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region amplifies the photocurrent. According to present embodiments, the problem of mutual constraint between the photoelectric detector rate and the quantum efficiency can be avoided, and the photoelectric detector can be easily integrated with other passive optical devices; moreover, the photoelectric detector has large photocurrent amplification and high sensitivity due to the fact that the photomultiplier region multiplying the current is provided.

Description

一种波导型光电探测器及其制造方法Waveguide photoelectric detector and manufacturing method thereof
本申请要求2018年11月19日向中国国家知识产权局提交的专利申请号为201811379153.6，发明名称为“一种波导型光电探测器及其制造方法”的在先申请的优先权。在先申请的全文通过引用的方式结合于本申请中。This application requires the priority of the prior application for the patent application number 201811379153.6 submitted to the State Intellectual Property Office of China on November 19, 2018, with the invention titled "a waveguide photodetector and its manufacturing method". The entire text of the prior application is incorporated into this application by reference.
技术领域Technical field
本申请涉及半导体技术领域，尤其涉及一种波导型光电探测器及其制造方法。The present application relates to the field of semiconductor technology, in particular to a waveguide type photodetector and a manufacturing method thereof.
背景技术Background technique
相较于传统的III-V族和II-V族红外光电探测器，IV族的锗(Ge)探测器，因其制备工艺与Si基CMOS工艺兼容，具有体积小、易集成、低成本、高性能等潜在优势，在光通讯及光传感领域受到了广泛的应用。然而，Ge材料在波长大于1.55μm时，吸收系数急剧下降，这使得Ge探测器无法满足短波红外乃至中红外的应用。GeSn作为一种新型IV族材料，因其能带带隙随着Sn组分增加而减小，在短波红外到中红外有着大的吸收系数，是制备红外探测器的理想材料。近年来，GeSn红外探测器受到了广泛的研究。Compared with traditional III-V and II-V infrared photodetectors, Group IV germanium (Ge) detectors are small in size, easy to integrate, low cost, because of their preparation process compatible with Si-based CMOS processes Potential advantages such as high performance are widely used in the fields of optical communication and optical sensing. However, when the wavelength of Ge material is greater than 1.55μm, the absorption coefficient drops sharply, which makes the Ge detector unable to meet the application of short-wave infrared and even mid-infrared. As a new type IV material, GeSn has a large absorption coefficient from short-wave infrared to mid-infrared because its energy band gap decreases with the increase of Sn composition. It is an ideal material for preparing infrared detectors. In recent years, GeSn infrared detectors have received extensive research.
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。It should be noted that the above introduction to the technical background is set forth only to facilitate a clear and complete description of the technical solutions of the present application and to facilitate understanding by those skilled in the art. It cannot be considered that the above technical solutions are known to those skilled in the art just because these solutions are described in the background part of the present application.
发明内容Summary of the invention
在现有技术中，基于GeSn的红外探测器存在一些不足，例如：对于光线垂直入射到吸收层的探测器而言，存在光探测器速率和量子效率间相互制约的问题；或者，光电探测器内部缺少增益机制，导致光电探测器的响应度较低。In the prior art, the infrared detector based on GeSn has some shortcomings, for example: for a detector with light incident perpendicularly to the absorption layer, there is a problem of mutual restriction between the speed of the photodetector and the quantum efficiency; or, the photodetector The lack of internal gain mechanism leads to a low responsivity of the photodetector.
本申请实施例提供一种波导型光电探测器及其制造方法，在衬底的绝缘层表面形成波导型光电探测器，该光电探测器由于具有波导结构，能够避免光探测器速率和量子效率间相互制约的问题，且容易与其他无源光器件集成，并且，该光电探测器由于具有使电流倍增的光点倍增区，因而具备大的光电流放大倍数和高的灵敏度。Embodiments of the present application provide a waveguide-type photodetector and a method for manufacturing the same. A waveguide-type photodetector is formed on the surface of an insulating layer of a substrate. The photodetector has a waveguide structure, which can avoid the speed and quantum efficiency of the photodetector. The problem of mutual constraints, and easy integration with other passive optical devices, and because the photodetector has a light spot multiplication area that doubles the current, it has a large photocurrent amplification factor and high sensitivity.
根据本申请实施例的一个方面，提供一种波导型光电探测器，包括：According to an aspect of an embodiment of the present application, a waveguide-type photodetector is provided, including:
位于衬底表面的绝缘层；位于所述绝缘层表面的硅波导；位于所述绝缘层表面的硅光电倍增区，其连接于所述硅波导的末端；以及位于所述硅光电倍增区的至少部分表面的光电转换层，其中，所述光电转换层的材料为锗锡(GeSn)，所述硅波导传递的光通过消逝波耦合进入所述光电转换层，并在所述光电转换层中生成光电流，所述硅光电倍增区将所述光电流进行放大。An insulating layer on the surface of the substrate; a silicon waveguide on the surface of the insulating layer; a silicon photomultiplier region on the surface of the insulating layer connected to the end of the silicon waveguide; and at least a silicon photomultiplier region on the surface Part of the surface photoelectric conversion layer, wherein the material of the photoelectric conversion layer is germanium tin (GeSn), the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through the evanescent wave, and is generated in the photoelectric conversion layer Photocurrent, the silicon photomultiplier area amplifies the photocurrent.
根据本申请实施例的另一个方面，其中，所述硅光电倍增区包括：在所述绝缘层表面横向设置的P型掺杂区、倍增区和N型掺杂区，其中，所述倍增区位于所述P型掺杂区和所述N型掺杂区之间。According to another aspect of the embodiments of the present application, wherein the silicon photomultiplier region includes: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, wherein the multiplied region Located between the P-type doped region and the N-type doped region.
根据本申请实施例的另一个方面，其中，所述倍增区的数量为2个以上，其中，所述P型掺杂区位于2个所述倍增区之间。According to another aspect of the embodiments of the present application, wherein the number of the multiplication regions is more than 2, wherein the P-type doped region is located between the two multiplication regions.
根据本申请实施例的另一个方面，其中，所述光电转换层位于所述P型掺杂区表面。According to another aspect of the embodiments of the present application, wherein the photoelectric conversion layer is located on the surface of the P-type doped region.
根据本申请实施例的另一个方面，其中，所述光电转换层包括吸收层和位于所述吸收层表面的接触层，其中，所述吸收层的材料为 Ge (1-x)Sn x，0<x<0.4，所述接触层的材料为P型掺杂的锗锡(GeSn)。 According to another aspect of the embodiments of the present application, wherein the photoelectric conversion layer includes an absorption layer and a contact layer on the surface of the absorption layer, wherein the material of the absorption layer is Ge (1-x) Sn x , 0 <x <0.4, the material of the contact layer is P-type doped germanium tin (GeSn).
根据本申请实施例的另一个方面，提供一种波导型光电探测器的制造方法，包括：According to another aspect of the embodiments of the present application, there is provided a method for manufacturing a waveguide photodetector, including:
在衬底的绝缘层表面形成硅波导和硅光电倍增区，所述硅光电倍增区连接于所述硅波导的末端；以及在所述硅光电倍增区的至少部分表面形成光电转换层，所述光电转换层的材料为锗锡(GeSn)，其中，所述硅波导传递的光通过消逝波耦合进入所述光电转换层，并在所述光电转换层中生成光电流，所述硅光电倍增区用于将所述光电流进行放大。Forming a silicon waveguide and a silicon photomultiplier region on the surface of the insulating layer of the substrate, the silicon photomultiplier region being connected to the end of the silicon waveguide; and forming a photoelectric conversion layer on at least part of the surface of the silicon photomultiplier region, The material of the photoelectric conversion layer is germanium tin (GeSn), wherein the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through an evanescent wave, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region It is used to amplify the photocurrent.
根据本申请实施例的另一个方面，其中，所述硅光电倍增区包括：在所述绝缘层表面横向设置的P型掺杂区、倍增区和N型掺杂区，所述倍增区位于所述P型掺杂区和所述N型掺杂区之间，并且，所述P型掺杂区、所述倍增区和所述N型掺杂区的材料为硅。According to another aspect of the embodiments of the present application, wherein the silicon photomultiplier region includes: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, the multiplied region is located at Between the P-type doped region and the N-type doped region, and the material of the P-type doped region, the multiplication region, and the N-type doped region is silicon.
根据本申请实施例的另一个方面，其中，在所述硅光电倍增区的至少部分表面形成光电转换层包括：According to another aspect of the embodiments of the present application, wherein forming the photoelectric conversion layer on at least part of the surface of the silicon photomultiplier region includes:
采用选择性外延方法，在所述P型掺杂区表面形成所述光电转换层。Using a selective epitaxy method, the photoelectric conversion layer is formed on the surface of the P-type doped region.
根据本申请实施例的另一个方面，提供一种波导型光电探测器的制造方法，包括：According to another aspect of the embodiments of the present application, there is provided a method for manufacturing a waveguide photodetector, including:
在位于绝缘层表面的硅材料中形成P型掺杂区；Forming a P-type doped region in the silicon material on the surface of the insulating layer;
在包括所述P型掺杂区的硅材料表面沉积光电转换材料，并刻蚀所述光电转换材料，露出所述硅材料，其中，保留的所述光电转换材料形成光电转换层，所述光电转换层的材料为锗锡(GeSn)；Depositing a photoelectric conversion material on the surface of the silicon material including the P-type doped region, and etching the photoelectric conversion material to expose the silicon material, wherein the remaining photoelectric conversion material forms a photoelectric conversion layer, the photoelectric The material of the conversion layer is germanium tin (GeSn);
刻蚀露出的所述硅材料，形成硅波导和硅光电倍增区，所述硅光电倍增区连接于所述硅波导的末端；以及Etching the exposed silicon material to form a silicon waveguide and a silicon photomultiplier region, the silicon photomultiplier region being connected to the end of the silicon waveguide; and
在所述硅光电倍增区中形成N型掺杂区，所述P型掺杂区和所述N型掺杂区之间形成为倍增区。An N-type doped region is formed in the silicon photomultiplier region, and a multiplied region is formed between the P-type doped region and the N-type doped region.
本申请的有益效果在于：The beneficial effects of this application are:
在衬底的绝缘层表面形成波导型光电探测器，该光电探测器由于具有波导结构，能够避免光探测器速率和量子效率间相互制约的问题，且容易与其他无源光器件集成，并且，该光电探测器由于具有使电流倍增的光点倍增区，因而具备大的光电流放大倍数和高的灵敏度。A waveguide-type photodetector is formed on the surface of the insulating layer of the substrate. The photodetector has a waveguide structure, which can avoid the problem of mutual restriction between the speed and quantum efficiency of the photodetector, and is easily integrated with other passive optical devices, and, Since the photodetector has a light spot multiplication region that doubles the current, it has a large photocurrent amplification factor and high sensitivity.
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。With reference to the following description and drawings, specific embodiments of the present application are disclosed in detail, and the manner in which the principles of the present application can be adopted is indicated. It should be understood that the embodiments of the present application are not thus limited in scope. Within the scope of the spirit and terms of the appended claims, the embodiments of the present application include many changes, modifications, and equivalents.
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。Features described and / or illustrated for one embodiment may be used in one or more other embodiments in the same or similar manner, combined with features in other embodiments, or substituted for features in other embodiments .
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。It should be emphasized that the term "comprising / comprising" as used herein refers to the presence of features, whole pieces, steps or components, but does not exclude the presence or addition of one or more other features, whole pieces, steps or components.
附图说明BRIEF DESCRIPTION
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。在附图中：The included drawings are used to provide a further understanding of the embodiments of the present application, which form a part of the specification, are used to exemplify the embodiments of the present application, and explain the principle of the present application together with the text description. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without paying any creative labor, other drawings can be obtained based on these drawings. In the drawings:
图1是本申请实施例1的波导型光电探测器的一个立体示意图；FIG. 1 is a schematic perspective view of a waveguide-type photodetector according to Example 1 of the present application;
图2是图1的A-A’方向观察的一个截面示意图；Fig. 2 is a schematic cross-sectional view viewed in the direction A-A 'of Fig. 1;
图3是本申请实施例2的波导型光电探测器的制造方法的一个示意 图；3 is a schematic diagram of a method of manufacturing a waveguide-type photodetector according to Embodiment 2 of the present application;
图4是本申请实施例2中各步骤对应的器件截面图；4 is a cross-sectional view of the device corresponding to each step in Example 2 of the present application;
图5是本申请实施例3的波导型光电探测器的制造方法的一个示意图；5 is a schematic diagram of a method of manufacturing a waveguide-type photodetector according to Example 3 of the present application;
图6是本申请实施例3中各步骤对应的器件截面图。6 is a cross-sectional view of the device corresponding to each step in Embodiment 3 of the present application.
具体实施方式detailed description
参照附图，通过下面的说明书，本申请的前述以及其它特征将变得明显。在说明书和附图中，具体公开了本申请的特定实施方式，其表明了其中可以采用本申请的原则的部分实施方式，应了解的是，本申请不限于所描述的实施方式，相反，本申请包括落入所附权利要求的范围内的全部修改、变型以及等同物。The foregoing and other features of the present application will become apparent from the following description with reference to the drawings. In the specification and the drawings, specific implementations of the present application are disclosed in detail, which shows some implementations in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described implementations. The application includes all modifications, variations, and equivalents falling within the scope of the appended claims.
在本申请各实施例的说明中，为描述方便，将平行于衬底的绝缘层的主表面的方向称为“横向”，将垂直于衬底的绝缘层的主表面的方向称为“纵向”。In the description of the embodiments of the present application, for the convenience of description, the direction parallel to the main surface of the insulating layer of the substrate is called "transverse", and the direction perpendicular to the main surface of the insulating layer of the substrate is called "longitudinal" ".
实施例1Example 1
本实施例提供一种波导型光电探测器。This embodiment provides a waveguide type photodetector.
图1是本实施例的波导型光电探测器的一个立体示意图，图2是图1的A-A’方向观察的一个截面示意图。Fig. 1 is a schematic perspective view of a waveguide-type photodetector of this embodiment, and Fig. 2 is a schematic cross-sectional view viewed in the direction A-A 'of Fig. 1.
如图1和图2所示，该波导型光电探测器1包括：As shown in FIGS. 1 and 2, the waveguide-type photodetector 1 includes:
位于衬底11表面的绝缘层12；位于绝缘层12表面的硅波导13(图2未示出)；位于绝缘层12表面的硅光电倍增区14，其连接于硅波导13的末端131(图2未示出)；位于硅光电倍增区14的至少部分表面的光电转换层15，其中，光电转换层15的材料中包含锗(Ge)，例如，锗锡(GeSn)。An insulating layer 12 on the surface of the substrate 11; a silicon waveguide 13 on the surface of the insulating layer 12 (not shown in FIG. 2); a silicon photomultiplier region 14 on the surface of the insulating layer 12, which is connected to the end 131 of the silicon waveguide 13 (FIG. 2 not shown); a photoelectric conversion layer 15 located on at least part of the surface of the silicon photomultiplier region 14, wherein the material of the photoelectric conversion layer 15 contains germanium (Ge), for example, germanium tin (GeSn).
在本实施例中，硅波导13传递的光通过消逝波耦合进入光电转换层 15，并在光电转换层15中生成光电流，硅光电倍增区14例如可以形成雪崩倍增放大器，从而能够将光电流放大。In this embodiment, the light transmitted by the silicon waveguide 13 is coupled into the photoelectric conversion layer 15 through the evanescent wave, and a photocurrent is generated in the photoelectric conversion layer 15, and the silicon photomultiplier region 14 may form an avalanche multiplier amplifier, for example, so that the photocurrent amplification.
根据本实施例，与传统III-V族、II-VI族红外探测器相比，由于本实施例采用IV族的GeSn材料作为吸收层，因而能够与现有CMOS工艺兼容；此外，与垂直入射的探测器相比，本实施例的基于波导结构的光电探测器能避免光探测器速率和量子效率间相互制约的问题，且容易与其他无源光器件集成；此外，本申请采用吸收电荷倍增分离雪崩光电探测器结构，与传统的光电探测器相比，有着大的光电流放大倍数和高的灵敏度。According to this embodiment, compared with traditional III-V and II-VI infrared detectors, since this embodiment uses the Group IV GeSn material as the absorption layer, it can be compatible with the existing CMOS process; in addition, it is compatible with normal incidence Compared with the detector of this embodiment, the photodetector based on the waveguide structure of this embodiment can avoid the problem of mutual restriction between the speed and quantum efficiency of the photodetector, and it is easy to integrate with other passive optical devices; Compared with the traditional photodetector, the separated avalanche photodetector structure has large photocurrent magnification and high sensitivity.
在本实施例中，硅波导13和硅光电倍增区14的材料都是硅。绝缘层12例如可以是氧化硅。衬底11例如可以是硅。In this embodiment, the materials of the silicon waveguide 13 and the silicon photomultiplier region 14 are both silicon. The insulating layer 12 may be silicon oxide, for example. The substrate 11 may be silicon, for example.
在本实施例中，可以对绝缘体上的硅(SOI)进行加工，将SOI的顶层硅加工为硅波导13和硅光电倍增区14，将SOI的埋氧层作为绝缘层12，并将SOI的衬底硅作为衬底11。此外，本实施例也可以不限于此，例如，可以将体硅作为衬底11，在体硅表面形成绝缘层作为绝缘层12，在绝缘层12表面通过沉积或键合等方法形成硅材料层，对该硅材料层进行加工以形成硅波导13和硅光电倍增区14。In this embodiment, the silicon on insulator (SOI) can be processed, the top silicon layer of the SOI is processed into a silicon waveguide 13 and a silicon photomultiplier region 14, the buried oxygen layer of the SOI is used as the insulating layer 12, and the SOI Substrate silicon as substrate 11. In addition, this embodiment may not be limited to this. For example, bulk silicon may be used as the substrate 11, an insulating layer may be formed on the surface of the bulk silicon as the insulating layer 12, and a silicon material layer may be formed on the surface of the insulating layer 12 by deposition or bonding. The silicon material layer is processed to form a silicon waveguide 13 and a silicon photomultiplier region 14.
如图2所示，硅光电倍增区14可以包括：在绝缘层12表面横向设置的P型掺杂区141、倍增区142和N型掺杂区143。在本实施例中，倍增区142位于P型掺杂区121和N型掺杂区143之间，并且，P型掺杂区141、倍增区142和N型掺杂区143的材料为硅。其中，倍增区142可以是本征区，N型掺杂区143可以是重掺杂区。由此，硅光电倍增区14可以形成雪崩二极管。As shown in FIG. 2, the silicon photomultiplier region 14 may include: a P-type doped region 141, a multiplied region 142 and an N-type doped region 143 disposed laterally on the surface of the insulating layer 12. In this embodiment, the multiplication region 142 is located between the P-type doping region 121 and the N-type doping region 143, and the material of the P-type doping region 141, the multiplication region 142, and the N-type doping region 143 is silicon. The multiplication region 142 may be an intrinsic region, and the N-type doped region 143 may be a heavily doped region. Thus, the silicon photomultiplier region 14 can form an avalanche diode.
如图2所示，倍增区142的数量可以为2个以上，其中，P型掺杂区141位于2个倍增区142之间，2个倍增区142的外侧可以各形成有1个N掺杂区143，由此，在P型掺杂区141的两侧可以分别形成雪崩二极管，从而提高 电流的放大能力。As shown in FIG. 2, the number of multiplying regions 142 may be more than two. Among them, the P-type doped region 141 is located between the two multiplying regions 142, and one N-doping may be formed outside the two multiplying regions 142 respectively. In the region 143, avalanche diodes can be formed on both sides of the P-type doped region 141, thereby improving the current amplification capability.
如图2所示，光电转换层15可以位于P型掺杂区141的表面。该光电转换层15可以包括：吸收层151和位于吸收层151表面的接触层152。其中，吸收层151的材料为Ge (1-x)Sn x，0<x<0.4，该吸收层151例如可以是本征的Ge (1-x)Sn x；接触层152的材料为P型掺杂的锗锡(GeSn)，例如，P型重掺杂的锗锡。 As shown in FIG. 2, the photoelectric conversion layer 15 may be located on the surface of the P-type doped region 141. The photoelectric conversion layer 15 may include an absorption layer 151 and a contact layer 152 on the surface of the absorption layer 151. Wherein, the material of the absorber layer 151 is Ge (1-x) Sn x , 0 <x <0.4, the absorber layer 151 may be intrinsic Ge (1-x) Sn x ; the material of the contact layer 152 is P-type Doped germanium tin (GeSn), for example, P-type heavily doped germanium tin.
在本实施例中，接触层152的表面可以形成第一电极16，光电倍增区的N型掺杂区143的表面还可以形成第二电极17，第一电极16和第二电极17可以是相同的导体材料或不同的导体材料，例如，第一电极16和第二电极17都是铝(Al)。In this embodiment, the first electrode 16 may be formed on the surface of the contact layer 152, and the second electrode 17 may also be formed on the surface of the N-type doped region 143 of the photomultiplier region. The first electrode 16 and the second electrode 17 may be the same Or different conductor materials, for example, both the first electrode 16 and the second electrode 17 are aluminum (Al).
在本实施例中，硅波导13和硅光电倍增区14连接为一体，光电转换层15位于硅光电倍增区14的表面，由此，进入硅波导13的光通过硅波导13传输到硅光电倍增区14，在硅光电倍增区14和光电转换层15的界面通过消逝波耦合进入光电转换层15，并在光电转换层15中产生光电流，光电流通过硅光电倍增区14被放大，并从第二电极17被导出。In this embodiment, the silicon waveguide 13 and the silicon photomultiplier region 14 are connected as a whole, and the photoelectric conversion layer 15 is located on the surface of the silicon photomultiplier region 14, whereby light entering the silicon waveguide 13 is transmitted to the silicon photomultiplier through the silicon waveguide 13 Region 14, at the interface between the silicon photomultiplier region 14 and the photoelectric conversion layer 15 is coupled into the photoelectric conversion layer 15 by evanescent waves, and a photocurrent is generated in the photoelectric conversion layer 15, and the photocurrent is amplified through the silicon photomultiplier region 14 and from The second electrode 17 is led out.
根据本实施例，采用IV族的GeSn材料作为吸收层，因而能够与现有CMOS工艺兼容；此外，由于具有硅波导，该光电探测器能避免光探测器速率和量子效率间相互制约的问题，且容易与其他无源光器件集成；此外，本申请的硅光电倍增区能够对光电流进行放大，从而提高光电探测器的灵敏度。According to this embodiment, the Group IV GeSn material is used as the absorption layer, so it can be compatible with the existing CMOS process; in addition, due to the silicon waveguide, the photodetector can avoid the problem of mutual restriction between the photodetector rate and quantum efficiency, And it is easy to integrate with other passive optical devices; in addition, the silicon photomultiplier region of the present application can amplify the photocurrent, thereby improving the sensitivity of the photodetector.
实施例2Example 2
实施例2提供一种波导型光电探测器的制造方法，用于制造实施例1所述的波导型光电探测器。Embodiment 2 provides a method for manufacturing a waveguide-type photodetector, which is used to manufacture the waveguide-type photodetector described in Embodiment 1.
图3是本实施例的波导型光电探测器的制造方法的一个示意图，如图3所示，在本实施例中，该制造方法可以包括：FIG. 3 is a schematic diagram of the manufacturing method of the waveguide-type photodetector of this embodiment. As shown in FIG. 3, in this embodiment, the manufacturing method may include:
步骤301、在衬底的绝缘层表面形成硅波导和硅光电倍增区，所述硅光电倍增区连接于所述硅波导的末端；以及 Step 301, forming a silicon waveguide and a silicon photomultiplier region on the surface of the insulating layer of the substrate, the silicon photomultiplier region being connected to the end of the silicon waveguide; and
步骤302、在所述硅光电倍增区的至少部分表面形成光电转换层，所述光电转换层的材料为锗锡(GeSn)。Step 302: Form a photoelectric conversion layer on at least part of the surface of the silicon photomultiplier region, and the material of the photoelectric conversion layer is germanium tin (GeSn).
在本实施例中，硅波导传递的光通过消逝波耦合进入该光电转换层，并在该光电转换层中生成光电流，该硅光电倍增区用于将该光电流进行放大。In this embodiment, the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through evanescent waves, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region is used to amplify the photocurrent.
在本实施例中，硅光电倍增区包括：在所述绝缘层表面横向设置的P型掺杂区、倍增区和N型掺杂区，其中，所述倍增区位于所述P型掺杂区和所述N型掺杂区之间，并且，所述P型掺杂区、所述倍增区和所述N型掺杂区的材料为硅。In this embodiment, the silicon photomultiplier region includes: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, wherein the multiplied region is located in the P-type doped region And the N-type doped region, and the material of the P-type doped region, the multiplication region, and the N-type doped region is silicon.
在本实施例的步骤302中，采用选择性外延方法，在P型掺杂区表面形成该光电转换层。In step 302 of this embodiment, a selective epitaxy method is used to form the photoelectric conversion layer on the surface of the P-type doped region.
在本实施例中，采用从下到上的制造顺序形成硅波导、硅光电倍增区以及光电转换层。In this embodiment, a silicon waveguide, a silicon photomultiplier region, and a photoelectric conversion layer are formed in a manufacturing order from bottom to top.
下面，结合一个具体的实例来说明本申请的波导型光电探测器的制造方法。The manufacturing method of the waveguide-type photodetector of the present application will be described below with reference to a specific example.
图4是该实例中各步骤对应的器件截面图，如图4所示，在该实例中，波导型光电探测器的制造方法包括如下步骤：4 is a cross-sectional view of the device corresponding to each step in this example. As shown in FIG. 4, in this example, the manufacturing method of the waveguide-type photodetector includes the following steps:
步骤1：通过光刻及干法刻蚀在SOI衬底的顶层硅上制备硅波导，例如，硅波导的端部宽度d1(如图1所示)为500nm，硅波导的端部宽度d2为10μm。在该步骤中，还通过光刻定义N型掺杂区范围，采用离子注入及高温退火方法制备N型掺杂区制备，如图4的(a)所示。Step 1: Prepare a silicon waveguide on the top silicon of the SOI substrate by photolithography and dry etching. For example, the end width d1 of the silicon waveguide (as shown in FIG. 1) is 500 nm, and the end width d2 of the silicon waveguide is 10μm. In this step, the N-type doped region is also defined by photolithography, and ion implantation and high-temperature annealing are used to prepare the N-type doped region, as shown in (a) of FIG. 4.
步骤2：通过光刻定义P型掺杂区的范围，采用离子注入及高温退火方法制备P型掺杂区，如图4的(b)所示。Step 2: Define the range of the P-type doped region by photolithography, and prepare the P-type doped region by ion implantation and high-temperature annealing, as shown in (b) of FIG. 4.
步骤3：通过硬掩模定义的光电转换层的范围，采用选择性外延方法生长GeSn作为吸收层，如图4的(c)所示；其中，硬掩模例如可以是二氧化硅，外延方法例如是化学气相沉积(CVD)。Step 3: The range of the photoelectric conversion layer defined by the hard mask, and the selective epitaxial method is used to grow GeSn as the absorber layer, as shown in (c) of FIG. 4; wherein, the hard mask may be silicon dioxide, for example For example, chemical vapor deposition (CVD).
步骤4：采用CVD方法，在吸收层表面选择性外延生长P型掺杂的锗锡作为P型掺杂层；随后在P型掺杂层和N型掺杂区的表面沉积SiO 2保护层，并通过光刻及刻蚀方法定义P型掺杂层与第一电极的接触区域，以及N型掺杂区与第二电极的接触区域；然后沉积金属Al，并通过光刻和刻蚀形成第一电极和第二电极，从而完成器件制备，如图4的(d)所示。 Step 4: CVD method is used to selectively epitaxially grow P-type doped germanium on the surface of the absorber layer as a P-type doped layer; then deposit a SiO 2 protective layer on the surface of the P-type doped layer and the N-type doped region And define the contact area between the P-type doped layer and the first electrode and the contact area between the N-type doped area and the second electrode through photolithography and etching methods; then deposit metal Al, and form the first through photolithography and etching One electrode and a second electrode, thereby completing device preparation, as shown in (d) of FIG. 4.
根据本实施例，采用IV族的GeSn材料作为吸收层，因而能够与现有CMOS工艺兼容；此外，由于具有硅波导，该光电探测器能避免光探测器速率和量子效率间相互制约的问题，且容易与其他无源光器件集成；此外，本申请的硅光电倍增区能够对光电流进行放大，从而提高光电探测器的灵敏度。According to this embodiment, the Group IV GeSn material is used as the absorption layer, so it can be compatible with the existing CMOS process; in addition, due to the silicon waveguide, the photodetector can avoid the problem of mutual restriction between the photodetector rate and quantum efficiency, And it is easy to integrate with other passive optical devices; in addition, the silicon photomultiplier region of the present application can amplify the photocurrent, thereby improving the sensitivity of the photodetector.
实施例3Example 3
实施例3提供一种波导型光电探测器的制造方法，用于制造实施例1所述的波导型光电探测器。Embodiment 3 provides a method for manufacturing a waveguide-type photodetector, which is used to manufacture the waveguide-type photodetector described in Embodiment 1.
图5是本实施例的波导型光电探测器的制造方法的一个示意图，如图5所示，在本实施例中，该制造方法可以包括：FIG. 5 is a schematic diagram of the manufacturing method of the waveguide-type photodetector of this embodiment. As shown in FIG. 5, in this embodiment, the manufacturing method may include:
步骤501、在位于绝缘层表面的硅材料中形成P型掺杂区；Step 501: Form a P-type doped region in the silicon material on the surface of the insulating layer;
步骤502、在包括所述P型掺杂区的硅材料表面沉积光电转换材料，并刻蚀所述光电转换材料，露出所述硅材料，其中，保留的所述光电转换材料形成光电转换层，所述光电转换层的材料为锗锡(GeSn)；Step 502: Deposit a photoelectric conversion material on the surface of the silicon material including the P-type doped region, and etch the photoelectric conversion material to expose the silicon material, wherein the remaining photoelectric conversion material forms a photoelectric conversion layer, The material of the photoelectric conversion layer is germanium tin (GeSn);
步骤503、刻蚀露出的所述硅材料，形成硅波导和硅光电倍增区，所述硅光电倍增区连接于所述硅波导的末端；以及 Step 503, etching the exposed silicon material to form a silicon waveguide and a silicon photomultiplier region, the silicon photomultiplier region being connected to the end of the silicon waveguide; and
步骤504、在所述光电倍增区中形成N型掺杂区，所述P型掺杂区和 所述N型掺杂区之间形成为倍增区。Step 504: An N-type doped region is formed in the photomultiplier region, and a multiplier region is formed between the P-type doped region and the N-type doped region.
在本实施例中，硅波导传递的光通过消逝波耦合进入所述光电转换层，并在所述光电转换层中生成光电流，所述硅光电倍增区用于将所述光电流进行放大。In this embodiment, the light transmitted by the silicon waveguide couples into the photoelectric conversion layer through evanescent waves, and generates a photocurrent in the photoelectric conversion layer, and the silicon photomultiplier region is used to amplify the photocurrent.
在本实施例中，采用从上到下的制造顺序形成光电转换层以及硅波导、硅光电倍增区。In this embodiment, the photoelectric conversion layer, the silicon waveguide, and the silicon photomultiplier region are formed in a manufacturing order from top to bottom.
下面，结合一个具体的实例来说明本申请的波导型光电探测器的制造方法。The manufacturing method of the waveguide-type photodetector of the present application will be described below with reference to a specific example.
图6是该实例中各步骤对应的器件截面图，如图6所示，在该实例中，波导型光电探测器的制造方法包括如下步骤：FIG. 6 is a cross-sectional view of the device corresponding to each step in this example. As shown in FIG. 6, in this example, the manufacturing method of the waveguide photodetector includes the following steps:
步骤1：通过光刻在SOI衬底的顶层硅上定义P型掺杂区的范围，采用离子注入及高温退火方法形成P型掺杂区；采用CVD方法，在顶层硅表面外延生长GeSn吸收层及GeSn P型掺杂层，参见图6的(a)。Step 1: Define the range of P-type doped regions on the top silicon layer of the SOI substrate by photolithography, and use ion implantation and high-temperature annealing to form the P-type doped region; adopt the CVD method to epitaxially grow the GeSn absorber layer on the top silicon surface And GeSn P-type doped layer, see (a) of FIG. 6.
步骤2：通过光刻及刻蚀制备GeSn吸收区台面，刻蚀至顶层硅层，参见图6的(b)。Step 2: Prepare the mesa of the GeSn absorption region by photolithography and etching, and etch to the top silicon layer, see (b) of FIG. 6.
步骤3：采用光刻及刻蚀形成硅波导，波导宽度为500nm，波导端部的宽度为10μm；通过光刻定义硅光电倍增区的N型掺杂区的范围，采用离子注入及高温退火方法制备N型掺杂区，参见图6的(c)。Step 3: Use photolithography and etching to form a silicon waveguide with a waveguide width of 500 nm and a width of the waveguide end of 10 μm; define the range of the N-type doped region in the photomultiplier region of silicon by photolithography, using ion implantation and high-temperature annealing methods For the preparation of N-type doped regions, see (c) of FIG. 6.
步骤4：在吸收层表面的P型掺杂层和硅光电倍增区的N型掺杂区的表面沉积SiO 2保护层，并通过光刻及刻蚀方法定义P型掺杂层与第一电极的接触区域，以及N型掺杂区与第二电极的接触区域；然后沉积金属Al，并通过光刻和刻蚀形成第一电极和第二电极，从而完成器件制备，如图6的(d)所示。 Step 4: Deposit a SiO 2 protective layer on the surface of the P-type doped layer on the surface of the absorber layer and the N-type doped region of the silicon photomultiplier region, and define the P-type doped layer and the first electrode by photolithography and etching methods And the contact area of the N-type doped region and the second electrode; then metal Al is deposited, and the first electrode and the second electrode are formed by photolithography and etching, thereby completing device preparation, as shown in FIG. 6 (d ) As shown.
根据本实施例，采用IV族的GeSn材料作为吸收层，因而能够与现有CMOS工艺兼容；此外，由于具有硅波导，该光电探测器能避免光探测 器速率和量子效率间相互制约的问题，且容易与其他无源光器件集成；此外，本申请的硅光电倍增区能够对光电流进行放大，从而提高光电探测器的灵敏度。According to this embodiment, the Group IV GeSn material is used as the absorption layer, so it can be compatible with the existing CMOS process; in addition, due to the silicon waveguide, the photodetector can avoid the problem of mutual restriction between the photodetector rate and quantum efficiency, And it is easy to integrate with other passive optical devices; in addition, the silicon photomultiplier region of the present application can amplify the photocurrent, thereby improving the sensitivity of the photodetector.
以上结合具体的实施方式对本申请进行了描述，但本领域技术人员应该清楚，这些描述都是示例性的，并不是对本申请保护范围的限制。本领域技术人员可以根据本申请的精神和原理对本申请做出各种变型和修改，这些变型和修改也在本申请的范围内。The present application has been described above in conjunction with specific implementations, but those skilled in the art should understand that these descriptions are exemplary and do not limit the protection scope of the present application. Those skilled in the art can make various variations and modifications to the present application according to the spirit and principle of the present application, and these variations and modifications are also within the scope of the present application.

Claims (9)

  1. 一种波导型光电探测器，其中，包括：位于衬底表面的绝缘层；位于所述绝缘层表面的硅波导；位于所述绝缘层表面的硅光电倍增区，其连接于所述硅波导的末端；以及位于所述硅光电倍增区的至少部分表面的光电转换层，其中，所述光电转换层的材料为锗锡(GeSn)，所述硅波导传递的光通过消逝波耦合进入所述光电转换层，并在所述光电转换层中生成光电流，所述硅光电倍增区将所述光电流进行放大。A waveguide type photodetector, comprising: an insulating layer on the surface of the substrate; a silicon waveguide on the surface of the insulating layer; a silicon photomultiplier region on the surface of the insulating layer, which is connected to the An end; and a photoelectric conversion layer located on at least part of the surface of the silicon photomultiplier region, wherein the material of the photoelectric conversion layer is germanium tin (GeSn), and the light transmitted by the silicon waveguide is coupled into the photoelectricity through an evanescent wave The conversion layer generates a photocurrent in the photoelectric conversion layer, and the silicon photomultiplier region amplifies the photocurrent.
  2. 如权利要求1所述的波导型光电探测器，其中，所述硅光电倍增区包括：在所述绝缘层表面横向设置的P型掺杂区、倍增区和N型掺杂区，其中，所述倍增区位于所述P型掺杂区和所述N型掺杂区之间。The waveguide type photodetector according to claim 1, wherein the silicon photomultiplier region comprises: a P-type doped region, a multiplied region and an N-type doped region arranged laterally on the surface of the insulating layer, wherein The multiplication region is located between the P-type doped region and the N-type doped region.
  3. 如权利要求2所述的波导型光电探测器，其中，所述倍增区的数量为2个以上，其中，所述P型掺杂区位于2个所述倍增区之间。The waveguide-type photodetector according to claim 2, wherein the number of the multiplication regions is two or more, and wherein the P-type doped region is located between the two multiplication regions.
  4. 如权利要求3所述的波导型光电探测器，其中，所述光电转换层位于所述P型掺杂区表面。The waveguide type photodetector according to claim 3, wherein the photoelectric conversion layer is located on the surface of the P-type doped region.
  5. 如权利要求2所述的波导型光电探测器，其中，所述光电转换层包括吸收层和位于所述吸收层表面的接触层，其中，所述吸收层的材料为Ge (1-x)Sn x，0<x<0.4，所述接触层的材料为P型掺杂的锗锡(GeSn)。 The waveguide type photodetector according to claim 2, wherein the photoelectric conversion layer comprises an absorption layer and a contact layer on the surface of the absorption layer, wherein the material of the absorption layer is Ge (1-x) Sn x , 0 <x <0.4, the material of the contact layer is P-type doped germanium tin (GeSn).
  6. 一种波导型光电探测器的制造方法，其中，包括：A method for manufacturing a waveguide photodetector, which includes:
    在衬底的绝缘层表面形成硅波导和硅光电倍增区，所述硅光电倍增区连接于所述硅波导的末端；以及Forming a silicon waveguide and a silicon photomultiplier region on the surface of the insulating layer of the substrate, the silicon photomultiplier region being connected to the end of the silicon waveguide; and
    在所述硅光电倍增区的至少部分表面形成光电转换层，所述光电转换层的材料为锗锡(GeSn)，Forming a photoelectric conversion layer on at least part of the surface of the silicon photomultiplier region, the material of the photoelectric conversion layer is germanium tin (GeSn),
    其中，所述硅波导传递的光通过消逝波耦合进入所述光电转换层，并在所述光电转换层中生成光电流，所述硅光电倍增区用于将所述光电流进行放大。Wherein, the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through an evanescent wave, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region is used to amplify the photocurrent.
  7. 如权利要求6所述的波导型光电探测器，其中，所述硅光电倍增区包括： 在所述绝缘层表面横向设置的P型掺杂区、倍增区和N型掺杂区，其中，所述倍增区位于所述P型掺杂区和所述N型掺杂区之间，并且，所述P型掺杂区、所述倍增区和所述N型掺杂区的材料为硅。The waveguide type photodetector according to claim 6, wherein the silicon photomultiplier region comprises: a P-type doped region, a multiplied region and an N-type doped region disposed laterally on the surface of the insulating layer, wherein The multiplication region is located between the P-type doping region and the N-type doping region, and the material of the P-type doping region, the multiplication region, and the N-type doping region is silicon.
  8. 如权利要求7所述的波导型光电探测器的制造方法，其中，在所述硅光电倍增区的至少部分表面形成光电转换层包括：采用选择性外延方法，在所述P型掺杂区表面形成所述光电转换层。The method for manufacturing a waveguide type photodetector according to claim 7, wherein forming a photoelectric conversion layer on at least a part of the surface of the silicon photomultiplier region comprises: using a selective epitaxy method on the surface of the P-type doped region The photoelectric conversion layer is formed.
  9. 一种波导型光电探测器的制造方法，其中，包括：A method for manufacturing a waveguide photodetector, which includes:
    在位于绝缘层表面的硅材料中形成P型掺杂区；Forming a P-type doped region in the silicon material on the surface of the insulating layer;
    在包括所述P型掺杂区的硅材料表面沉积光电转换材料，并刻蚀所述光电转换材料，露出所述硅材料，其中，保留的所述光电转换材料形成光电转换层，所述光电转换层的材料为锗锡(GeSn)；Depositing a photoelectric conversion material on the surface of the silicon material including the P-type doped region, and etching the photoelectric conversion material to expose the silicon material, wherein the remaining photoelectric conversion material forms a photoelectric conversion layer, the photoelectric The material of the conversion layer is germanium tin (GeSn);
    刻蚀露出的所述硅材料，形成硅波导和硅光电倍增区，所述硅光电倍增区连接于所述硅波导的末端；以及Etching the exposed silicon material to form a silicon waveguide and a silicon photomultiplier region, the silicon photomultiplier region being connected to the end of the silicon waveguide; and
    在所述硅光电倍增区中形成N型掺杂区，所述P型掺杂区和所述N型掺杂区之间形成为倍增区，Forming an N-type doped region in the silicon photomultiplier region, and a multiplied region is formed between the P-type doped region and the N-type doped region,
    其中，所述硅波导传递的光通过消逝波耦合进入所述光电转换层，并在所述光电转换层中生成光电流，所述硅光电倍增区用于将所述光电流进行放大。Wherein, the light transmitted by the silicon waveguide is coupled into the photoelectric conversion layer through an evanescent wave, and a photocurrent is generated in the photoelectric conversion layer, and the silicon photomultiplier region is used to amplify the photocurrent.
PCT/CN2019/083948 2018-11-19 2019-04-23 Waveguide-type photoelectric detector and manufacturing method therefor WO2020103396A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811379153.6 2018-11-19
CN201811379153.6A CN111211182A (en) 2018-11-19 2018-11-19 Waveguide type photoelectric detector and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2020103396A1 true WO2020103396A1 (en) 2020-05-28

Family

ID=70773089

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/083948 WO2020103396A1 (en) 2018-11-19 2019-04-23 Waveguide-type photoelectric detector and manufacturing method therefor

Country Status (2)

Country Link
CN (1) CN111211182A (en)
WO (1) WO2020103396A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112186075B (en) * 2020-10-10 2023-05-23 中国科学院微电子研究所 Waveguide type photoelectric detector and manufacturing method thereof
CN112331744B (en) * 2021-01-06 2021-11-05 武汉光谷信息光电子创新中心有限公司 Preparation method of photoelectric detector
CN112993065A (en) * 2021-03-30 2021-06-18 华中科技大学 Avalanche photodetector based on Bragg grating and transverse waveguide structure
CN113629159B (en) * 2021-08-06 2022-11-22 中国科学院半导体研究所 Silicon infrared enhanced evanescent wave coupling avalanche photodetector and manufacturing method thereof
CN113964213B (en) * 2021-09-24 2023-10-03 西安电子科技大学 GeSn waveguide type single-row carrier photodetector structure and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433399B1 (en) * 1998-10-09 2002-08-13 Stmicroelectronics S.R.L. Infrared detector device of semiconductor material and manufacturing process thereof
CN201885758U (en) * 2010-11-19 2011-06-29 深圳信息职业技术学院 Avalanche photoelectric detector and optical energy detecting device
CN103489953A (en) * 2013-09-09 2014-01-01 中国科学院半导体研究所 APD with dual-step evanescent field coupling function
CN104681634A (en) * 2015-01-22 2015-06-03 北京工业大学 Waveguide coupling type separate absorption and multiplication avalanche diode
CN104882509A (en) * 2015-04-05 2015-09-02 北京工业大学 Waveguide butt-coupling type separated absorption multiplication avalanche diode
CN105576072A (en) * 2016-01-25 2016-05-11 武汉光电工业技术研究院有限公司 Low-noise avalanche photodetector and preparation method thereof
CN107871800A (en) * 2017-02-24 2018-04-03 乔丽萍 N+ GeSn/i GeSn/p+ Ge structure photodetectors and preparation method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743552A (en) * 1993-08-02 1995-02-14 Hitachi Cable Ltd Optical waveguide element for coupling semiconductor laser diode and waveguide type module using the same
JP3141080B2 (en) * 1994-06-22 2001-03-05 ケイディディ株式会社 Semiconductor functional element
US6225672B1 (en) * 1998-08-05 2001-05-01 National Science Council Of Republic Of China High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate
US7209623B2 (en) * 2005-05-03 2007-04-24 Intel Corporation Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions
US7305157B2 (en) * 2005-11-08 2007-12-04 Massachusetts Institute Of Technology Vertically-integrated waveguide photodetector apparatus and related coupling methods
US8639065B2 (en) * 2010-06-18 2014-01-28 Kotura, Inc. System having avalanche effect light sensor with enhanced sensitivity
US20120043527A1 (en) * 2010-08-19 2012-02-23 Agency For Science, Technology And Research Light emitting device
US8461624B2 (en) * 2010-11-22 2013-06-11 Intel Corporation Monolithic three terminal photodetector
CN105122469B (en) * 2013-04-19 2017-03-08 富士通株式会社 Semiconductor light-receiving device and its manufacture method
US9048371B2 (en) * 2013-10-03 2015-06-02 Globalfoundries Singapore Pte. Ltd. Semiconductor devices including avalanche photodetector diodes integrated on waveguides and methods for fabricating the same
CN104300013B (en) * 2014-05-05 2015-06-03 重庆大学 GeSn infrared detector with strain source
CN105514209A (en) * 2015-12-17 2016-04-20 西安电子科技大学 Infrared night-vision goggle based on GeSn infrared detector
CN106024922B (en) * 2016-03-02 2017-10-24 西安电子科技大学 Phototransistor based on GeSn materials and preparation method thereof
CN105789366B (en) * 2016-03-16 2017-07-28 中国科学院半导体研究所 A kind of silicon substrate hybrid integrated avalanche photodetector
CN105895727B (en) * 2016-04-22 2017-07-28 西安电子科技大学 Photodetector based on relaxation GeSn materials
CN107863399B (en) * 2017-02-24 2019-06-14 西藏民族大学 N-Ge-i-Ge-p-Si structured waveguide type photodetector based on LRC technique and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433399B1 (en) * 1998-10-09 2002-08-13 Stmicroelectronics S.R.L. Infrared detector device of semiconductor material and manufacturing process thereof
CN201885758U (en) * 2010-11-19 2011-06-29 深圳信息职业技术学院 Avalanche photoelectric detector and optical energy detecting device
CN103489953A (en) * 2013-09-09 2014-01-01 中国科学院半导体研究所 APD with dual-step evanescent field coupling function
CN104681634A (en) * 2015-01-22 2015-06-03 北京工业大学 Waveguide coupling type separate absorption and multiplication avalanche diode
CN104882509A (en) * 2015-04-05 2015-09-02 北京工业大学 Waveguide butt-coupling type separated absorption multiplication avalanche diode
CN105576072A (en) * 2016-01-25 2016-05-11 武汉光电工业技术研究院有限公司 Low-noise avalanche photodetector and preparation method thereof
CN107871800A (en) * 2017-02-24 2018-04-03 乔丽萍 N+ GeSn/i GeSn/p+ Ge structure photodetectors and preparation method thereof

Also Published As

Publication number Publication date
CN111211182A (en) 2020-05-29

Similar Documents

Publication Publication Date Title
WO2020103396A1 (en) Waveguide-type photoelectric detector and manufacturing method therefor
US10714531B2 (en) Infrared detector devices and focal plane arrays having a transparent common ground structure and methods of fabricating the same
WO2020103395A1 (en) Waveguide-type photodetector and manufacturing method therefor
WO2017000873A1 (en) Silicon-based germanium photoelectric detector
CN110896112B (en) Waveguide integrated GeSn photoelectric detector and manufacturing method thereof
US10199525B2 (en) Light-receiving element and optical integrated circuit
CN110729373B (en) GeSn infrared photoelectric detector based on Ge waveguide and manufacturing method thereof
CN104576786B (en) Novel zero volt response avalanche photodetector chip and preparation method thereof
KR101947088B1 (en) Avalanche photodetector
CN210136887U (en) Waveguide type photoelectric detector
WO2022041550A1 (en) Avalanche photodetector and preparation method therefor
CN113097335B (en) Waveguide coupling plasma enhanced Ge-based infrared photoelectric detector and preparation method thereof
WO2020191961A1 (en) Waveguide type gepb infrared photodetector, and manufacturing method therefor
CN116053336A (en) Preparation method of light trapping structure on surface of InGaAs avalanche detector
CN110890436B (en) Waveguide type GeSn photoelectric transistor and manufacturing method thereof
CN204067379U (en) Novel zero volt response avalanche photodetector chip
WO2020107784A1 (en) Unidirectional carrier transport photodetector and manufacturing method therefor
CN115440834A (en) Waveguide type silicon-based short-wave infrared band avalanche photodetector and manufacturing method thereof
CN110828603B (en) GeSn phototransistor based on III-V group material emitter region and manufacturing method thereof
CN110896115B (en) Phototransistor, infrared detector and method for manufacturing phototransistor
TW201921712A (en) Avalanche photodiode and method for preparing same
JPS6398158A (en) Photodiode
CN114497265B (en) Avalanche photoelectric detector
CN111755553B (en) Lead doped germanium infrared photoelectric detector and forming method thereof
CN109148623B (en) AlGaN-based avalanche photodiode with low noise and preparation method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19887520

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19887520

Country of ref document: EP

Kind code of ref document: A1