WO2020107784A1 - Unidirectional carrier transport photodetector and manufacturing method therefor - Google Patents

Unidirectional carrier transport photodetector and manufacturing method therefor Download PDF

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WO2020107784A1
WO2020107784A1 PCT/CN2019/083947 CN2019083947W WO2020107784A1 WO 2020107784 A1 WO2020107784 A1 WO 2020107784A1 CN 2019083947 W CN2019083947 W CN 2019083947W WO 2020107784 A1 WO2020107784 A1 WO 2020107784A1
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light absorption
layer
stack
absorption region
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PCT/CN2019/083947
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French (fr)
Chinese (zh)
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汪巍
方青
余明斌
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上海新微技术研发中心有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of semiconductor technology, in particular to a unidirectional carrier transmission photodetector and a manufacturing method thereof.
  • GeSn material As a new type of four-group alloy material, GeSn material has a large absorption coefficient in near infrared and even short-wave infrared, and is an ideal material for preparing Si infrared photodetectors.
  • GeSn infrared detectors have received extensive research. Wei Du and other authors published a surface-receiving GeSn photodetector in its "Silicon-based Ge0.89Sn0.11 photodetector and light emitters-towards mid-infrared applications", with an 11% SnS GeSn alloy as absorption Layer, its optical response range extends to the 3 ⁇ m band.
  • the carriers of the photodetector include holes and electrons. Since holes move slowly in the depletion region, the carrier migration time mainly depends on the space The transport time of holes; and, when the input current or power increases, holes with low mobility form accumulation in the transport, which deforms the potential distribution, hinders the collection of photogenerated carriers, and saturates the output photocurrent.
  • the embodiments of the present application provide a unidirectional carrier-transmitting photodetector and a manufacturing method thereof.
  • the electron is used as the only active carrier, so it is more suitable for high incident light intensity and high current output at high speed.
  • germanium tin is used as a light absorption layer, the material can have a wider detection range in the infrared band, and greatly improve the electron mobility, which is conducive to the realization of high-power high-speed unidirectional carrier transmission detection.
  • a unidirectional carrier transmission photodetector including:
  • a light absorption region on the surface of the buffer layer the material of the light absorption region is germanium tin (GeSn), and the light absorption region absorbs light and generates electrons and holes;
  • a barrier layer located on the surface of the light absorption region, and the conduction band at the interface of the barrier layer and the light absorption region forms a conduction band step, which prevents the electrons generated by the light absorption region from passing through Interface;
  • An anode contact region located on the surface of the barrier layer, the anode contact layer being used for contacting with the anode electrode, wherein the electron collecting region is used for collecting electrons generated by the light absorbing region, and the buffer layer is used for buffering The stress between the electron collection region and the light absorption region.
  • the unidirectional carrier transport photodetector also has an anti-reflection layer covering the side wall of the stack, the surface of the anode contact area, and the cathode contact layer from The exposed surfaces on both sides of the laminate.
  • the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact region.
  • the cathode contact layer and the electron collection region are respectively n-doped silicon material and undoped silicon material.
  • the buffer layer is an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material.
  • the material of the barrier layer differs from the material of the light absorption region by a lattice constant within ⁇ 10%.
  • anode contact layer material is p-type doped germanium or III-V group material.
  • a method for manufacturing a unidirectional carrier transmission photodetector includes:
  • a stack is formed on the surface of the cathode contact layer, and the stack includes an electron collecting region, a buffer layer, a light absorbing region, a barrier layer, and an anode contact region in order from the bottom to the top.
  • a cathode electrode and an anode electrode are formed, the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact area.
  • the step of forming the stack includes:
  • the material stack is etched to reduce the lateral dimension of the material stack to form the stack, and a mesa is formed between the stack and the cathode contact layer.
  • the method further includes:
  • the steps of forming the cathode electrode and the anode electrode include:
  • a conductive material is deposited on the surface of the anti-reflection layer, and part of the conductive material is etched away, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode and the anode electrode.
  • Electrons are the only active carriers, so they are more suitable for high-intensity light output and high-speed high-speed output.
  • the use of germanium-tin material as the light absorption layer can have a wider detection range in the infrared band and greatly improve Electron mobility, which is conducive to the realization of high-power high-speed one-way carrier transmission detection.
  • Example 1 is a schematic cross-sectional view of a unidirectional carrier transmission photodetector according to Example 1 of the present application;
  • FIG. 2 is a schematic diagram of a method for manufacturing a unidirectional carrier transmission photodetector according to Example 2 of the present application;
  • FIG 3 is a cross-sectional view of the device corresponding to each step in Embodiment 2 of the present application.
  • the direction parallel to the surface of the substrate is referred to as “lateral direction”, and the direction perpendicular to the surface of the substrate is referred to as “longitudinal direction”, where the “ “Thickness” refers to the dimension of the component in the "longitudinal direction”.
  • the direction from the substrate to the anode contact layer is called the “upper” direction, and the direction opposite to the "upper” direction is the “downward” direction.
  • This embodiment provides a unidirectional carrier transmission photodetector.
  • FIG. 1 is a schematic cross-sectional view of the unidirectional carrier transport photodetector of this embodiment.
  • the unidirectional carrier transmission photodetector 1 includes:
  • the electron collection area 12 located on the surface of the cathode contact layer 11;
  • the barrier layer 15 on the surface of the light absorption region 14 and the interface between the barrier layer 15 and the light absorption region 14 form a conduction band band step that prevents electrons generated by the light absorption region 14 from passing through the interface;
  • the anode contact region 16 located on the surface of the barrier layer 15 is used to contact the anode electrode 161.
  • the electron collection area 12 is used to collect the electrons generated by the light absorption area 14.
  • the buffer layer 13 serves to buffer the stress between the electron collection region 12 and the light absorption region 14.
  • the barrier layer 15 since the barrier layer 15 is formed between the light absorption region 14 and the anode contact region 16, the barrier layer 15 blocks the electrons generated by the light absorption region 14 from diffusing toward the anode electrode 161. Therefore, in the light absorption region 14 In electrons, electrons can only be directed in the direction of the cathode electrode 111, and thus, in the unidirectional carrier transport photodetector 1, electrons flow unidirectionally. In this unidirectional carrier transport photodetector 1, electrons are used as the only active carriers, so it is more suitable for high-speed output of high incident light intensity and large current.
  • the germanium-tin material is used to form the light absorption region 14 so that the unidirectional carrier transmission photodetector 1 has a wider detection range in the infrared band; and, the electrons in the germanium-tin material
  • the mobility is very high, which can further increase the response speed of the unidirectional carrier transmission photodetector 1, thereby facilitating high-power and high-speed unidirectional carrier transmission detection.
  • the substrate 10 may be a substrate commonly used in semiconductor processes, for example, bulk silicon, silicon on insulator (SOI), or silicon germanium.
  • SOI silicon on insulator
  • the cathode contact layer 11 and the electron collection region 12 are respectively n-type doped silicon material and undoped (ie, intrinsic) silicon material, wherein the cathode contact layer 11 may be heavily doped, for example N-type doped silicon material.
  • the cathode contact layer 11 and the electron collecting region 12 may not be limited to silicon materials, but other semiconductor materials.
  • the buffer layer 13 may be an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material. Therefore, the buffer layer 13 may be used to buffer the electron collection region 12 and the light absorption region 14 Between the stress, improve the quality of the material.
  • the light absorption region 14 may be a p-type Ge (1-x) Sn x material.
  • the absorption efficiency can be increased and the detection range can be widened.
  • the composition of Sn can be greater than 0 and less than 40% (molar ratio), that is, 0 ⁇ x ⁇ 0.4
  • the detection range of the detector in the infrared band is widened, and the migration rate of electrons is increased.
  • the light absorption region 14 is p-type, and therefore, the holes generated by the light absorption region 14 will be quickly absorbed by the anode electrode 161 directly during the relaxation time, and no holes drift in the depletion region ( drift), thereby improving the response speed of the photodetector.
  • the light absorption region 14 is an intrinsic (ie, undoped) region, the holes generated by the light absorption region 14 need to drift to a p-type region (eg, anode contact region 16, etc.) by As a result, the hole transport time is extended and the response speed of the photodetector is reduced.
  • the lattices of the material of the barrier layer 15 and the material of the light absorption region 14 can be matched or nearly matched, for example, the lattice constants of the two can be within ⁇ 10%.
  • the barrier layer 15 may use silicon germanium (SiGe), or a group III-V material that closely matches the lattice of germanium tin (GeSn).
  • the group III-V material may be, for example, indium aluminum phosphorus (InAlP) ), Indium Aluminum Arsenide (InAlAs), Indium Gallium Phosphorus (InGaP), or Indium Gallium Arsenide (InGaAs), where the lattice constants of Group III-V materials can be adjusted by adjusting the composition of each element in Group III-V materials
  • the lattice of the germanium tin (GeSn) material of the light absorption region 14 is matched or nearly matched.
  • the material of the anode contact layer 16 is p-type doped germanium or a III-V group material, where the doping concentration may be, for example, heavily doped, that is, p+ doped.
  • the lateral dimension of the stack formed by the electron collecting region 12, the buffer layer 13, the light absorbing region 14, the barrier layer 15 and the anode contact region 16 is smaller than the lateral dimension of the cathode contact region 11
  • a mesa is formed between the stack and the cathode contact region 11.
  • the unidirectional carrier transport photodetector 1 further has an anti-reflection layer 17, which covers the side wall of the stack, the surface of the anode contact region 16, and the cathode contact region 11 Surface exposed from both sides of the stack.
  • the material of the anti-reflection layer 17 may be silicon oxide, for example.
  • the cathode electrode 111 is located on the surface of the cathode contact layer 11 exposed from both sides of the stack, and the anode electrode 161 is located on the surface of the anode contact region 16.
  • the light absorption region 14 absorbs photons and generates photo-generated electrons and holes.
  • the photogenerated electrons diffuse into the depleted electron collection region 12 and drift to the cathode under the action of the electric field, that is, the electrons are transported in one direction.
  • An effective band step is formed at the interface conduction band of the barrier layer 15 and the light absorbing region 14, thereby preventing the diffusion of photogenerated electrons toward the anode.
  • the photogenerated holes can be quickly collected by the anode electrode 161 during the dielectric relaxation time because the light absorption region 14 is p-type.
  • the optical response of the germanium-tin germanium one-way carrier transmission photodetector is mainly determined by the electron transport. Because the germanium-tin material has a high electron mobility, it is more conducive to high-power high-speed photoelectric detection.
  • a high-power high-speed germanium tin unidirectional carrier transmission photodetector facing the infrared band can be provided.
  • the unidirectional carrier-transmitting photodetector has the following priorities: First, compared with traditional III-V, II-VI infrared detectors, since the present invention uses GeSn material which is the same as Si group IV as the absorption layer Therefore, it can be compatible with the existing CMOS process; second, compared with the traditional pin photodetector, the silicon germanium tin unidirectional carrier transmission photodetector of the present invention is more suitable for high incident light intensity and large current High-speed output; third, the present invention uses a germanium-tin material as the light absorption region, which can achieve a wider detection range and greater saturation power.
  • Embodiment 2 provides a method for manufacturing a unidirectional carrier transport photodetector, which is used to manufacture the unidirectional carrier transport photodetector described in Embodiment 1.
  • FIG. 2 is a schematic diagram of the manufacturing method of the unidirectional carrier transport photodetector of this embodiment. As shown in FIG. 2, in this embodiment, the manufacturing method may include:
  • Step 201 Deposit a cathode contact layer 11 on the surface of the substrate 10;
  • Step 202 a stack is formed on the surface of the cathode contact layer 11.
  • the stack includes an electron collecting region 12, a buffer layer 13, a light absorbing region 14, a barrier layer 15 and an anode contact region 16 in order from bottom to top.
  • the lateral dimension of the stack is smaller than the lateral dimension of the cathode contact area 11;
  • Step 203 forming a cathode electrode 111 and an anode electrode 161, the cathode electrode 111 is located on the surface of the cathode contact layer 11 exposed from both sides of the stack, and the anode electrode 161 is located on the surface of the anode contact region 16.
  • the material of the light absorption region 14 is germanium tin (GeSn), and the light absorption region 14 absorbs light and generates electrons and holes.
  • the interface of the barrier layer 15 and the light absorption region 14 forms a conduction band band step, which prevents electrons generated by the light absorption region 14 from passing through the interface.
  • the electron collection area 12 is used to collect the electrons generated by the light absorption area 14.
  • the buffer layer 13 serves to buffer the stress between the electron collection region 12 and the light absorption region 14.
  • the method may further include before step 203:
  • Step 204 Deposit an anti-reflection layer 17, which covers the side wall of the stack, the surface of the anode contact region 16, and the surface of the cathode contact layer 11 exposed from both sides of the stack.
  • step 203 may include:
  • Step 2031 etching a part of the anti-reflection layer 17 to form a cathode contact hole and an anode contact hole;
  • Step 2032 Deposit a conductive material on the surface of the anti-reflection layer 17, and etch away part of the conductive material, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode 111 and the anode electrode 161.
  • step 203 may directly deposit conductive material on the side wall of the stack, the surface of the anode contact region 16, and the surface of the cathode contact layer 11 exposed from both sides of the stack, and retain part of the conductive material by etching to form Cathode electrode 111 and anode electrode 161.
  • step 202 may include the following steps:
  • Step 301 Deposit electron collection region material 12a, buffer layer material 13a, light absorption region material 14a, barrier layer material 15a and anode contact region material 16a on the surface of the cathode contact layer 11 from bottom to top to form a material stack;
  • Step 302 Etch the material stack to reduce the lateral dimension of the material stack to form a stack, and form a mesa between the stack and the cathode contact layer 11.
  • the substrate is silicon.
  • FIG. 3 is a cross-sectional view of the device corresponding to each step in this example.
  • the manufacturing method of the unidirectional carrier transmission photodetector includes the following steps:
  • Step 1 Clean the substrate 10; epitaxially grow an n+ doped Si contact layer on the surface of the substrate 10, that is, the cathode contact layer 11 with a doping concentration of 2e19cm -3 and a thickness of about 1 ⁇ m; epitaxially grow the surface of the cathode contact layer 11
  • the Si collection layer that is, the electron collection region material 12a, with a thickness of about 300nm
  • the SiGe buffer layer material 13a is epitaxially grown on the surface of the electron collection region material 12a, with a thickness of about 50nm, and the Ge composition is 30% (molar ratio)
  • a material stack is formed, which is, in order from bottom to top, the electron collecting region material 12a, the buffer layer material 13a, the light absorption region material 14a, the barrier layer material 15a, and the anode contact region material 16a. See (b) of Figure 3.
  • Step 3 Use photolithography and reactive ion etching to etch the material stack to form the mesa.
  • the etched material stack becomes the stack of the functional area, and the stack is the electron collection area 12 from the bottom to the top.
  • Step 4 Deposit SiO 2 anti-reflective layer 17 with a thickness of about 400 nm; use photolithography and dry etching to form cathode contact holes and anode contact holes in the anti-reflective layer 17, then use magnetron sputtering to deposit metal Al, and then pass Part of the metal Al is removed by photolithography and dry etching, and the remaining metal Al forms the cathode electrode 111 and the anode electrode 161 to complete the device preparation. See (d) of Figure 3.
  • the barrier layer 15 since the barrier layer 15 is formed between the light absorption region 14 and the anode contact region 16, the barrier layer 15 blocks the electrons generated by the light absorption region 14 from diffusing toward the anode electrode 161. Therefore, in the light absorption region In 14, electrons can only be directed in the direction of the cathode electrode 111, whereby in the unidirectional carrier transport photodetector 1, electrons flow unidirectionally. In this unidirectional carrier transport photodetector 1, electrons are used as the only active carriers, so it is more suitable for high-speed output of high incident light intensity and large current.

Abstract

The present application provides a unidirectional carrier transport photodetector and a manufacturing method therefor. Said photodetector comprises: a cathode contact layer located on a surface of a substrate, the cathode contact layer being used for contacting with a cathode electrode; an electron collection region located on a surface of the cathode contact layer; a buffer layer located on a surface of the electron collection region; and a light absorption region located on a surface of the buffer layer, the material of the light absorption region being germanium tin, and the light absorption region absorbing light and generating electrons and holes; a barrier layer located on a surface of the light absorption region, the interface between the barrier layer and the light absorption region forming a conduction band step, and the band step preventing the electrons generated by the light absorption region from passing through the interface; and an anode contact region located on a surface of the barrier layer. The present application is beneficial for realizing transport detection of high-power and high-speed unidirectional carriers.

Description

一种单向载流子传输光电探测器及其制造方法Unidirectional carrier transmission photoelectric detector and manufacturing method thereof
本申请要求2018年11月27日向中国国家知识产权局提交的专利申请号为201811428096.6，发明名称为“一种单向载流子传输光电探测器及其制造方法”的在先申请的优先权。在先申请的全文通过引用的方式结合于本申请中。This application requires the priority of the prior application for the patent application number 201811428096.6 submitted to the State Intellectual Property Office of China on November 27, 2018, and the invention titled "A unidirectional carrier transmission photodetector and its manufacturing method". The entire text of the prior application is incorporated into this application by reference.
技术领域Technical field
本申请涉及半导体技术领域，尤其涉及一种单向载流子传输光电探测器及其制造方法。The present application relates to the field of semiconductor technology, in particular to a unidirectional carrier transmission photodetector and a manufacturing method thereof.
背景技术Background technique
GeSn材料作为一种新型的四族合金材料，在近红外乃至短波红外有着大的吸收系数，是制备Si红外光电探测器的理想材料。近年来，GeSn红外探测器受到了广泛的研究。Wei Du等作者在其发表的“Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications”中公开了一种面接收型GeSn光电探测器，Sn含量的11％的GeSn合金作为吸收层，其光响应范围扩展至3μm波段。As a new type of four-group alloy material, GeSn material has a large absorption coefficient in near infrared and even short-wave infrared, and is an ideal material for preparing Si infrared photodetectors. In recent years, GeSn infrared detectors have received extensive research. Wei Du and other authors published a surface-receiving GeSn photodetector in its "Silicon-based Ge0.89Sn0.11 photodetector and light emitters-towards mid-infrared applications", with an 11% SnS GeSn alloy as absorption Layer, its optical response range extends to the 3μm band.
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。It should be noted that the above introduction to the technical background is set forth only to facilitate a clear and complete description of the technical solutions of the present application and to facilitate understanding by those skilled in the art. It cannot be considered that the above technical solutions are known to those skilled in the art just because these solutions are described in the background part of the present application.
发明内容Summary of the invention
本申请的发明人发现：在传统的p-i-n型光电探测器中，光电探测器 的载流子包括空穴和电子，由于空穴在耗尽区迁移速度慢，载流子迁移时间主要取决于空穴的输运时间；并且，当输入电流或者功率增大时，低迁移率空穴在输运中形成堆积，使得电位分布发生变形，阻碍光生载流子收集，输出光电流饱和。The inventor of the present application found that: In a conventional pin-type photodetector, the carriers of the photodetector include holes and electrons. Since holes move slowly in the depletion region, the carrier migration time mainly depends on the space The transport time of holes; and, when the input current or power increases, holes with low mobility form accumulation in the transport, which deforms the potential distribution, hinders the collection of photogenerated carriers, and saturates the output photocurrent.
本申请实施例提供一种单向载流子传输光电探测器及其制造方法，由电子作为唯一活性载流子，因而更适用于强入射光强和大电流的高速输出，此外，采用锗锡材料作为光吸收层，能在红外波段具有更广的探测范围，并极大地提高电子迁移率，从而有利于实现大功率高速单向载流子的传输探测。The embodiments of the present application provide a unidirectional carrier-transmitting photodetector and a manufacturing method thereof. The electron is used as the only active carrier, so it is more suitable for high incident light intensity and high current output at high speed. In addition, germanium tin is used As a light absorption layer, the material can have a wider detection range in the infrared band, and greatly improve the electron mobility, which is conducive to the realization of high-power high-speed unidirectional carrier transmission detection.
根据本申请实施例的一个方面，提供一种单向载流子传输光电探测器，包括：According to an aspect of an embodiment of the present application, a unidirectional carrier transmission photodetector is provided, including:
位于衬底表面的阴极接触层，所述阴极接触层用于和阴极电极接触；A cathode contact layer on the surface of the substrate, the cathode contact layer being used for contacting with the cathode electrode;
位于所述阴极接触层表面的电子收集区；An electron collection area on the surface of the cathode contact layer;
位于所述电子收集区表面的缓冲层；A buffer layer on the surface of the electron collection area;
位于所述缓冲层表面的光吸收区，所述光吸收区的材料为锗锡(GeSn)，所述光吸收区吸收光并生成电子和空穴；A light absorption region on the surface of the buffer layer, the material of the light absorption region is germanium tin (GeSn), and the light absorption region absorbs light and generates electrons and holes;
位于所述光吸收区表面的势垒层，所述势垒层与所述光吸收区的界面的导带形成导带带阶，所述带阶阻止所述光吸收区生成的电子穿过所述界面；以及A barrier layer located on the surface of the light absorption region, and the conduction band at the interface of the barrier layer and the light absorption region forms a conduction band step, which prevents the electrons generated by the light absorption region from passing through Interface; and
位于所述势垒层表面的阳极接触区，所述阳极接触层用于和阳极电极接触，其中，所述电子收集区用于收集所述光吸收区生成的电子，所述缓冲层用于缓冲所述电子收集区和所述光吸收区之间的应力。An anode contact region located on the surface of the barrier layer, the anode contact layer being used for contacting with the anode electrode, wherein the electron collecting region is used for collecting electrons generated by the light absorbing region, and the buffer layer is used for buffering The stress between the electron collection region and the light absorption region.
根据本申请实施例的另一个方面，其中，所述电子收集区、所述缓冲层、所述光吸收区、所述势垒层以及所述阳极接触区形成的叠层的横向尺寸小于所述阴极接触区的横向尺寸，所述单向载流子传输光电探测 器还具有减反射层，其覆盖于所述叠层的侧壁、所述阳极接触区的表面、以及所述阴极接触层从所述叠层两侧露出的表面。According to another aspect of the embodiments of the present application, wherein the lateral dimension of the stack formed by the electron collection region, the buffer layer, the light absorption region, the barrier layer, and the anode contact region is smaller than the The lateral dimension of the cathode contact area, the unidirectional carrier transport photodetector also has an anti-reflection layer covering the side wall of the stack, the surface of the anode contact area, and the cathode contact layer from The exposed surfaces on both sides of the laminate.
根据本申请实施例的另一个方面，其中，所述阴极电极位于所述阴极接触层从所述叠层两侧露出的表面，所述阳极电极位于所述阳极接触区的表面。According to another aspect of the embodiments of the present application, wherein the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact region.
根据本申请实施例的另一个方面，其中，所述阴极接触层和所述电子收集区分别是n型掺杂的硅材料和非掺杂的硅材料。According to another aspect of the embodiments of the present application, wherein the cathode contact layer and the electron collection region are respectively n-doped silicon material and undoped silicon material.
根据本申请实施例的另一个方面，其中，所述缓冲层是非掺杂的锗(Ge)材料或非掺杂的锗硅(GeSi)材料。According to another aspect of the embodiments of the present application, wherein the buffer layer is an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material.
根据本申请实施例的另一个方面，其中，所述势垒层的材料与所述光吸收区的材料的晶格常数相差±10％以内。According to another aspect of the embodiments of the present application, wherein the material of the barrier layer differs from the material of the light absorption region by a lattice constant within ±10%.
根据本申请实施例的另一个方面，其中，所述阳极接触层材料为p型掺杂的锗或III-V族材料。According to another aspect of the embodiments of the present application, wherein the anode contact layer material is p-type doped germanium or III-V group material.
根据本申请实施例的另一个方面，提供一种单向载流子传输光电探测器的制造方法，包括：According to another aspect of the embodiments of the present application, a method for manufacturing a unidirectional carrier transmission photodetector includes:
在衬底表面沉积阴极接触层；Deposit a cathode contact layer on the substrate surface;
在所述阴极接触层表面形成叠层，所述叠层自下而上依次包括电子收集区、缓冲层、光吸收区、势垒层和阳极接触区，所述叠层的横向尺寸小于所述阴极接触区的横向尺寸；以及A stack is formed on the surface of the cathode contact layer, and the stack includes an electron collecting region, a buffer layer, a light absorbing region, a barrier layer, and an anode contact region in order from the bottom to the top. The lateral dimensions of the cathode contact area; and
形成阴极电极和阳极电极，所述阴极电极位于所述阴极接触层从所述叠层两侧露出的表面，所述阳极电极位于所述阳极接触区的表面。A cathode electrode and an anode electrode are formed, the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact area.
根据本申请实施例的另一个方面，其中，形成所述叠层的步骤包括：According to another aspect of the embodiments of the present application, wherein the step of forming the stack includes:
在所述阴极接触层表面自下而上依次沉积电子收集区材料、缓冲层材料、光吸收区材料、势垒层材料和阳极接触区材料，以形成材料叠层；Depositing materials of electron collection region, buffer layer material, light absorption region material, barrier layer material and anode contact region material on the surface of the cathode contact layer in order from bottom to top to form a material stack;
刻蚀所述材料叠层，以缩小所述材料叠层的横向尺寸，形成所述叠 层，所述叠层和所述阴极接触层之间形成台面。The material stack is etched to reduce the lateral dimension of the material stack to form the stack, and a mesa is formed between the stack and the cathode contact layer.
根据本申请实施例的另一个方面，其中，所述方法还包括：According to another aspect of the embodiments of the present application, wherein the method further includes:
沉积减反射层，其覆盖于所述叠层的侧壁、所述阳极接触区的表面、以及所述阴极接触层从所述叠层两侧露出的表面；Depositing an anti-reflection layer covering the side wall of the stack, the surface of the anode contact area, and the surface of the cathode contact layer exposed from both sides of the stack;
其中，形成阴极电极和阳极电极的步骤包括：Among them, the steps of forming the cathode electrode and the anode electrode include:
刻蚀所述减反射层的一部分，形成阴极接触孔和阳极接触孔；Etching a part of the anti-reflection layer to form a cathode contact hole and an anode contact hole;
在所述减反射层表面沉积导电材料，并刻蚀掉部分所述导电材料，保留在所述阴极接触孔和所述阳极接触孔内的导电材料形成所述阴极电极和所述阳极电极。A conductive material is deposited on the surface of the anti-reflection layer, and part of the conductive material is etched away, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode and the anode electrode.
本申请的有益效果在于：The beneficial effects of this application are:
由电子作为唯一活性载流子，因而更适用于强入射光强和大电流的高速输出，此外，采用锗锡材料作为光吸收层，能在红外波段具有更广的探测范围，并极大地提高电子迁移率，从而有利于实现大功率高速单向载流子的传输探测。Electrons are the only active carriers, so they are more suitable for high-intensity light output and high-speed high-speed output. In addition, the use of germanium-tin material as the light absorption layer can have a wider detection range in the infrared band and greatly improve Electron mobility, which is conducive to the realization of high-power high-speed one-way carrier transmission detection.
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。With reference to the following description and drawings, specific embodiments of the present application are disclosed in detail, and the manner in which the principles of the present application can be adopted is indicated. It should be understood that the embodiments of the present application are not thus limited in scope. Within the scope of the spirit and terms of the appended claims, the embodiments of the present application include many changes, modifications, and equivalents.
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。Features described and/or illustrated for one embodiment may be used in one or more other embodiments in the same or similar manner, combined with features in other embodiments, or substituted for features in other embodiments .
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。It should be emphasized that the term "comprising/comprising" as used herein refers to the presence of features, whole pieces, steps or components, but does not exclude the presence or addition of one or more other features, whole pieces, steps or components.
附图说明BRIEF DESCRIPTION
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。在附图中：The included drawings are used to provide a further understanding of the embodiments of the present application, which form a part of the specification, are used to exemplify the embodiments of the present application, and explain the principle of the present application together with the text description. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without paying any creative labor, other drawings can be obtained based on these drawings. In the drawings:
图1是本申请实施例1的单向载流子传输光电探测器的一个截面示意图；1 is a schematic cross-sectional view of a unidirectional carrier transmission photodetector according to Example 1 of the present application;
图2是本申请实施例2的单向载流子传输光电探测器的制造方法的一个示意图；2 is a schematic diagram of a method for manufacturing a unidirectional carrier transmission photodetector according to Example 2 of the present application;
图3是本申请实施例2中各步骤对应的器件截面图。3 is a cross-sectional view of the device corresponding to each step in Embodiment 2 of the present application.
具体实施方式detailed description
参照附图，通过下面的说明书，本申请的前述以及其它特征将变得明显。在说明书和附图中，具体公开了本申请的特定实施方式，其表明了其中可以采用本申请的原则的部分实施方式，应了解的是，本申请不限于所描述的实施方式，相反，本申请包括落入所附权利要求的范围内的全部修改、变型以及等同物。The foregoing and other features of the present application will become apparent from the following description with reference to the drawings. In the specification and the drawings, specific implementations of the present application are disclosed in detail, which shows some implementations in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described implementations. The application includes all modifications, variations, and equivalents falling within the scope of the appended claims.
在本申请各实施例的说明中，为描述方便，将平行于衬底的表面的方向称为“横向”，将垂直于衬底的表面的方向称为“纵向”，其中，各部件的“厚度”是指该部件在“纵向”的尺寸，在“纵向”中，从衬底指向阳极接触层的方向称为“上”方向，与“上”方向相反的为“下”方向。In the description of the embodiments of the present application, for convenience of description, the direction parallel to the surface of the substrate is referred to as “lateral direction”, and the direction perpendicular to the surface of the substrate is referred to as “longitudinal direction”, where the “ "Thickness" refers to the dimension of the component in the "longitudinal direction". In the "longitudinal direction", the direction from the substrate to the anode contact layer is called the "upper" direction, and the direction opposite to the "upper" direction is the "downward" direction.
实施例1Example 1
本实施例提供一种单向载流子传输光电探测器。This embodiment provides a unidirectional carrier transmission photodetector.
图1是本实施例的单向载流子传输光电探测器的一个截面示意图。FIG. 1 is a schematic cross-sectional view of the unidirectional carrier transport photodetector of this embodiment.
如图1所示，单向载流子传输光电探测器1包括：As shown in Figure 1, the unidirectional carrier transmission photodetector 1 includes:
位于衬底10表面的阴极接触层11，该阴极接触层11用于和阴极电极111接触；A cathode contact layer 11 on the surface of the substrate 10, the cathode contact layer 11 is used to contact with the cathode electrode 111;
位于阴极接触层11表面的电子收集区12；The electron collection area 12 located on the surface of the cathode contact layer 11;
位于电子收集区12表面的缓冲层13；The buffer layer 13 on the surface of the electron collection area 12;
位于缓冲层13表面的光吸收区14，光吸收区14的材料为锗锡(GeSn)，并且光吸收区14吸收光从而生成电子和空穴；A light absorption region 14 on the surface of the buffer layer 13, the material of the light absorption region 14 is germanium tin (GeSn), and the light absorption region 14 absorbs light to generate electrons and holes;
位于光吸收区14表面的势垒层15，势垒层15与光吸收区14的界面形成导带带阶，该带阶阻止光吸收区14生成的电子穿过该界面；以及The barrier layer 15 on the surface of the light absorption region 14 and the interface between the barrier layer 15 and the light absorption region 14 form a conduction band band step that prevents electrons generated by the light absorption region 14 from passing through the interface; and
位于势垒层15表面的阳极接触区16，阳极接触区16用于和阳极电极161接触。The anode contact region 16 located on the surface of the barrier layer 15 is used to contact the anode electrode 161.
在本实施例中，电子收集区12用于收集光吸收区14生成的电子。缓冲层13用于缓冲电子收集区12和光吸收区14之间的应力。In this embodiment, the electron collection area 12 is used to collect the electrons generated by the light absorption area 14. The buffer layer 13 serves to buffer the stress between the electron collection region 12 and the light absorption region 14.
根据本实施例，由于光吸收区14和阳极接触区16之间形成势垒层15，该势垒层15阻挡光吸收区14生成的电子往阳极电极161扩散，因此，在该光吸收区14中，电子只能向阴极电极111的方向，由此，在该单向载流子传输光电探测器1中，电子进行单向流动。在该单向载流子传输光电探测器1中，由电子作为唯一活性载流子，因而更适用于高入射光强和大电流的高速输出。According to this embodiment, since the barrier layer 15 is formed between the light absorption region 14 and the anode contact region 16, the barrier layer 15 blocks the electrons generated by the light absorption region 14 from diffusing toward the anode electrode 161. Therefore, in the light absorption region 14 In electrons, electrons can only be directed in the direction of the cathode electrode 111, and thus, in the unidirectional carrier transport photodetector 1, electrons flow unidirectionally. In this unidirectional carrier transport photodetector 1, electrons are used as the only active carriers, so it is more suitable for high-speed output of high incident light intensity and large current.
此外，在本实施例中，采用锗锡材料形成光吸收区14，使得所述单向载流子传输光电探测器1在红外波段具有更广的探测范围；并且，电子在锗锡材料中的迁移率非常高，能够进一步提高单向载流子传输光探测器1的响应速度，从而有利于实现大功率高速单向载流子的传输探测。In addition, in this embodiment, the germanium-tin material is used to form the light absorption region 14 so that the unidirectional carrier transmission photodetector 1 has a wider detection range in the infrared band; and, the electrons in the germanium-tin material The mobility is very high, which can further increase the response speed of the unidirectional carrier transmission photodetector 1, thereby facilitating high-power and high-speed unidirectional carrier transmission detection.
在本实施例中，衬底10可以是半导体工艺中常用的衬底，例如，体 硅、绝缘体上的硅(SOI)、或锗硅等。In this embodiment, the substrate 10 may be a substrate commonly used in semiconductor processes, for example, bulk silicon, silicon on insulator (SOI), or silicon germanium.
在本实施例中，阴极接触层11和电子收集区12分别是n型掺杂的硅材料和非掺杂的(即，本征)硅材料，其中，阴极接触层11例如可以是重掺杂的n型掺杂的硅材料。此外，阴极接触层11和电子收集区12也可以不限于硅材料，而是其它的半导体材料。In this embodiment, the cathode contact layer 11 and the electron collection region 12 are respectively n-type doped silicon material and undoped (ie, intrinsic) silicon material, wherein the cathode contact layer 11 may be heavily doped, for example N-type doped silicon material. In addition, the cathode contact layer 11 and the electron collecting region 12 may not be limited to silicon materials, but other semiconductor materials.
在本实施例中，缓冲层13可以是非掺杂的锗(Ge)材料或非掺杂的锗硅(GeSi)材料，由此，缓冲层13可以用来缓冲电子收集区12和光吸收区14之间的应力，提高材料质量。In this embodiment, the buffer layer 13 may be an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material. Therefore, the buffer layer 13 may be used to buffer the electron collection region 12 and the light absorption region 14 Between the stress, improve the quality of the material.
在本实施例中，光吸收区14可以是采用p型的Ge (1-x)Sn x材料。对于光吸收区14，通过在Ge中掺入Sn，能够增大吸收效率并拓宽探测范围，例如，Sn的组分可以是大于0且小于40％(摩尔比)，即，0<x<0.4，由此，拓宽探测器在红外波段的探测范围，并提高电子的迁移速率。 In this embodiment, the light absorption region 14 may be a p-type Ge (1-x) Sn x material. For the light absorption region 14, by incorporating Sn into Ge, the absorption efficiency can be increased and the detection range can be widened. For example, the composition of Sn can be greater than 0 and less than 40% (molar ratio), that is, 0<x<0.4 Thus, the detection range of the detector in the infrared band is widened, and the migration rate of electrons is increased.
在本实施例中，光吸收区14为p型，由此，光吸收区14生成的空穴会在驰豫时间内直接被阳极电极161快速地吸收，而没有空穴在耗尽区漂移(drift)的过程，从而提高光电探测器的响应速度。与之相对，如果光吸收区14为本征(即，不掺杂)区，那么光吸收区14生成的空穴需要漂移(drift)到p型区域(例如，阳极接触区16等)，由此，延长了空穴的输运时间，降低了光电探测器的响应速度。In this embodiment, the light absorption region 14 is p-type, and therefore, the holes generated by the light absorption region 14 will be quickly absorbed by the anode electrode 161 directly during the relaxation time, and no holes drift in the depletion region ( drift), thereby improving the response speed of the photodetector. In contrast, if the light absorption region 14 is an intrinsic (ie, undoped) region, the holes generated by the light absorption region 14 need to drift to a p-type region (eg, anode contact region 16, etc.) by As a result, the hole transport time is extended and the response speed of the photodetector is reduced.
在本实施例中，势垒层15的材料与光吸收区14的材料的晶格可以匹配或近似匹配，例如，二者的晶格常数可以相差±10％以内。In this embodiment, the lattices of the material of the barrier layer 15 and the material of the light absorption region 14 can be matched or nearly matched, for example, the lattice constants of the two can be within ±10%.
在一个实施方式中，势垒层15可以采用锗硅(SiGe)，或者与锗锡(GeSn)晶格近似匹配的III-V族材料，该III-V族材料例如可以为铟铝磷(InAlP)，铟铝砷(InAlAs)，铟镓磷(InGaP)或者铟镓砷(InGaAs)，其中，通过调整III-V族材料中各元素的组分，可以使III-V族材料的晶格常数与光吸收区14的锗锡(GeSn)材料的晶格匹配的或近似匹配。In one embodiment, the barrier layer 15 may use silicon germanium (SiGe), or a group III-V material that closely matches the lattice of germanium tin (GeSn). The group III-V material may be, for example, indium aluminum phosphorus (InAlP) ), Indium Aluminum Arsenide (InAlAs), Indium Gallium Phosphorus (InGaP), or Indium Gallium Arsenide (InGaAs), where the lattice constants of Group III-V materials can be adjusted by adjusting the composition of each element in Group III-V materials The lattice of the germanium tin (GeSn) material of the light absorption region 14 is matched or nearly matched.
在本实施例中，阳极接触层16的材料为p型掺杂的锗或III-V族材料，其中，掺杂浓度例如可以是重掺杂，即，p+掺杂。In this embodiment, the material of the anode contact layer 16 is p-type doped germanium or a III-V group material, where the doping concentration may be, for example, heavily doped, that is, p+ doped.
在本实施例中，如图1所示，电子收集区12、缓冲层13、光吸收区14、势垒层15以及阳极接触区16形成的叠层的横向尺寸小于阴极接触区11的横向尺寸，由此，在该叠层和阴极接触区11之间形成台面。In this embodiment, as shown in FIG. 1, the lateral dimension of the stack formed by the electron collecting region 12, the buffer layer 13, the light absorbing region 14, the barrier layer 15 and the anode contact region 16 is smaller than the lateral dimension of the cathode contact region 11 Thus, a mesa is formed between the stack and the cathode contact region 11.
在本实施例中，如图1所示，单向载流子传输光电探测器1还具有减反射层17，其覆盖于该叠层的侧壁、阳极接触区16的表面、以及阴极接触区11从该叠层两侧露出的表面。该减反射层17的材料例如可以是氧化硅。通过设置减反射层17，能够降低光的反射率，提高单向载流子传输光电探测器1对光的吸收率。In this embodiment, as shown in FIG. 1, the unidirectional carrier transport photodetector 1 further has an anti-reflection layer 17, which covers the side wall of the stack, the surface of the anode contact region 16, and the cathode contact region 11 Surface exposed from both sides of the stack. The material of the anti-reflection layer 17 may be silicon oxide, for example. By providing the anti-reflection layer 17, the reflectance of light can be reduced, and the absorption rate of light by the unidirectional carrier transmission photodetector 1 can be improved.
在本实施例中，如图1所示，阴极电极111位于阴极接触层11从该叠层两侧露出的表面，阳极电极161位于阳极接触区16的表面。In this embodiment, as shown in FIG. 1, the cathode electrode 111 is located on the surface of the cathode contact layer 11 exposed from both sides of the stack, and the anode electrode 161 is located on the surface of the anode contact region 16.
在本实施例中，光吸收区14吸收光子，并生成光生电子和空穴。光生电子扩散进入耗尽的电子收集区12，在电场作用下漂移至阴极，即，电子单向传输。势垒层15和光吸收区14的界面导带处形成了有效的带阶，从而阻止光生电子往阳极扩散。光生空穴则由于光吸收区14为p型而能够在介电驰豫时间内快速被阳极电极161收集。锗锡单向载流子传输光电探测器的光学响应主要由电子输运决定，由于锗锡材料拥有高的电子迁移率，更有利于实现大功率高速光电探测。In this embodiment, the light absorption region 14 absorbs photons and generates photo-generated electrons and holes. The photogenerated electrons diffuse into the depleted electron collection region 12 and drift to the cathode under the action of the electric field, that is, the electrons are transported in one direction. An effective band step is formed at the interface conduction band of the barrier layer 15 and the light absorbing region 14, thereby preventing the diffusion of photogenerated electrons toward the anode. The photogenerated holes can be quickly collected by the anode electrode 161 during the dielectric relaxation time because the light absorption region 14 is p-type. The optical response of the germanium-tin germanium one-way carrier transmission photodetector is mainly determined by the electron transport. Because the germanium-tin material has a high electron mobility, it is more conducive to high-power high-speed photoelectric detection.
通过本实施例，能够提供一种面向红外波段的大功率高速的锗锡单向载流子传输光电探测器。该单向载流子传输光电探测器具有如下优先：第一，与传统III-V族，II-VI族红外探测器相比，由于本发明采用与Si同为IV族的GeSn材料作为吸收层，因此，能够与现有CMOS工艺兼容；第二，与传统p-i-n光电探测器相比，本发明硅基锗锡单向载流子传输光电探测器，更适用于高入射光强和大电流的高速输出；第三，本发明由 于采用了锗锡材料作为光吸收区，能实现更广的探测范围，更大的饱和功率。Through this embodiment, a high-power high-speed germanium tin unidirectional carrier transmission photodetector facing the infrared band can be provided. The unidirectional carrier-transmitting photodetector has the following priorities: First, compared with traditional III-V, II-VI infrared detectors, since the present invention uses GeSn material which is the same as Si group IV as the absorption layer Therefore, it can be compatible with the existing CMOS process; second, compared with the traditional pin photodetector, the silicon germanium tin unidirectional carrier transmission photodetector of the present invention is more suitable for high incident light intensity and large current High-speed output; third, the present invention uses a germanium-tin material as the light absorption region, which can achieve a wider detection range and greater saturation power.
实施例2Example 2
实施例2提供一种单向载流子传输光电探测器的制造方法，用于制造实施例1所述的单向载流子传输光电探测器。Embodiment 2 provides a method for manufacturing a unidirectional carrier transport photodetector, which is used to manufacture the unidirectional carrier transport photodetector described in Embodiment 1.
图2是本实施例的单向载流子传输光电探测器的制造方法的一个示意图，如图2所示，在本实施例中，该制造方法可以包括：FIG. 2 is a schematic diagram of the manufacturing method of the unidirectional carrier transport photodetector of this embodiment. As shown in FIG. 2, in this embodiment, the manufacturing method may include:
步骤201、在衬底10表面沉积阴极接触层11；Step 201: Deposit a cathode contact layer 11 on the surface of the substrate 10;
步骤202、在所述阴极接触层11表面形成叠层，所述叠层自下而上依次包括电子收集区12、缓冲层13、光吸收区14、势垒层15和阳极接触区16，所述叠层的横向尺寸小于所述阴极接触区11的横向尺寸；以及 Step 202, a stack is formed on the surface of the cathode contact layer 11. The stack includes an electron collecting region 12, a buffer layer 13, a light absorbing region 14, a barrier layer 15 and an anode contact region 16 in order from bottom to top. The lateral dimension of the stack is smaller than the lateral dimension of the cathode contact area 11; and
步骤203、形成阴极电极111和阳极电极161，所述阴极电极111位于所述阴极接触层11从所述叠层两侧露出的表面，所述阳极电极161位于所述阳极接触区16的表面。 Step 203, forming a cathode electrode 111 and an anode electrode 161, the cathode electrode 111 is located on the surface of the cathode contact layer 11 exposed from both sides of the stack, and the anode electrode 161 is located on the surface of the anode contact region 16.
在本实施例中，光吸收区14的材料为锗锡(GeSn)，光吸收区14吸收光并生成电子和空穴。势垒层15与光吸收区14的界面形成导带带阶，该带阶阻止光吸收区14生成的电子穿过该界面。电子收集区12用于收集光吸收区14生成的电子。缓冲层13用于缓冲电子收集区12和光吸收区14之间的应力。In this embodiment, the material of the light absorption region 14 is germanium tin (GeSn), and the light absorption region 14 absorbs light and generates electrons and holes. The interface of the barrier layer 15 and the light absorption region 14 forms a conduction band band step, which prevents electrons generated by the light absorption region 14 from passing through the interface. The electron collection area 12 is used to collect the electrons generated by the light absorption area 14. The buffer layer 13 serves to buffer the stress between the electron collection region 12 and the light absorption region 14.
在本实施例中，如图2所述，该方法还可以在步骤203之前包括：In this embodiment, as shown in FIG. 2, the method may further include before step 203:
步骤204、沉积减反射层17，其覆盖于所述叠层的侧壁、所述阳极接触区16的表面、以及所述阴极接触层11从所述叠层两侧露出的表面。Step 204: Deposit an anti-reflection layer 17, which covers the side wall of the stack, the surface of the anode contact region 16, and the surface of the cathode contact layer 11 exposed from both sides of the stack.
其中，在具有步骤204的情况下，步骤203可以包括：Wherein, with step 204, step 203 may include:
步骤2031、刻蚀所述减反射层17的一部分，形成阴极接触孔和阳极接触孔；Step 2031, etching a part of the anti-reflection layer 17 to form a cathode contact hole and an anode contact hole;
步骤2032、在所述减反射层17表面沉积导电材料，并刻蚀掉部分导电材料，保留在阴极接触孔和阳极接触孔内的导电材料形成阴极电极111和阳极电极161。Step 2032: Deposit a conductive material on the surface of the anti-reflection layer 17, and etch away part of the conductive material, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode 111 and the anode electrode 161.
需要说明的是，本实施例也可以不具有步骤204，即，不设置减反射层17。在该情况下，步骤203可以直接在叠层的侧壁、阳极接触区16的表面、以及阴极接触层11从叠层两侧露出的表面沉积导电材料，并通过蚀刻保留部分导电材料，以形成阴极电极111和阳极电极161。It should be noted that this embodiment may not have step 204, that is, the anti-reflection layer 17 is not provided. In this case, step 203 may directly deposit conductive material on the side wall of the stack, the surface of the anode contact region 16, and the surface of the cathode contact layer 11 exposed from both sides of the stack, and retain part of the conductive material by etching to form Cathode electrode 111 and anode electrode 161.
在本实施例中，步骤202可以包括如下步骤：In this embodiment, step 202 may include the following steps:
步骤301、在阴极接触层11表面自下而上依次沉积电子收集区材料12a、缓冲层材料13a、光吸收区材料14a、势垒层材料15a和阳极接触区材料16a，以形成材料叠层；Step 301: Deposit electron collection region material 12a, buffer layer material 13a, light absorption region material 14a, barrier layer material 15a and anode contact region material 16a on the surface of the cathode contact layer 11 from bottom to top to form a material stack;
步骤302、刻蚀该材料叠层，以缩小该材料叠层的横向尺寸，形成叠层，该叠层和该阴极接触层11之间形成台面。Step 302: Etch the material stack to reduce the lateral dimension of the material stack to form a stack, and form a mesa between the stack and the cathode contact layer 11.
下面，结合一个具体的实例来说明本申请的单向载流子传输光电探测器的制造方法，在该实例中，衬底为硅。The manufacturing method of the unidirectional carrier transport photodetector of the present application will be described below in conjunction with a specific example. In this example, the substrate is silicon.
图3是该实例中各步骤对应的器件截面图，如图3所示，在该实例中，单向载流子传输光电探测器的制造方法包括如下步骤：FIG. 3 is a cross-sectional view of the device corresponding to each step in this example. As shown in FIG. 3, in this example, the manufacturing method of the unidirectional carrier transmission photodetector includes the following steps:
步骤1：清洗衬底10；在衬底10表面外延生长n+掺杂的Si接触层，即，阴极接触层11，掺杂浓度2e19cm -3，厚度约1μm；在阴极接触层11表面外延生长本征Si收集层，即，电子收集区材料12a，厚度约300nm；在电子收集区材料12a表面外延生长SiGe缓冲层材料13a，厚度约50nm，Ge组分30％(摩尔比)；在缓冲层材料13a表面外延生长p型掺杂的GeSn，即，光吸收区材料14a，其中，Sn组分8％(摩尔比)，掺杂浓度约为5e17cm -3，厚度约500nm。参见图3的(a)。 Step 1: Clean the substrate 10; epitaxially grow an n+ doped Si contact layer on the surface of the substrate 10, that is, the cathode contact layer 11 with a doping concentration of 2e19cm -3 and a thickness of about 1 μm; epitaxially grow the surface of the cathode contact layer 11 The Si collection layer, that is, the electron collection region material 12a, with a thickness of about 300nm; the SiGe buffer layer material 13a is epitaxially grown on the surface of the electron collection region material 12a, with a thickness of about 50nm, and the Ge composition is 30% (molar ratio); 13a surface epitaxially grows p-type doped GeSn, that is, the light absorption region material 14a, in which the Sn composition is 8% (molar ratio), the doping concentration is about 5e17cm -3 , and the thickness is about 500nm. See (a) of FIG. 3.
步骤2：在光吸收区材料14a表面外延生长p+掺杂的In (1-y)Ga yP势垒 层材料15a，其中，y＝0.3，掺杂浓度1e19cm -3，厚度约20nm；在势垒层材料15a表面外延生长p+-掺杂的In (1-y)Ga yP接触层，y＝0.3，掺杂浓度2e19cm -3，厚度约50nm。由此，形成材料叠层，该材料叠层自下而上依次为电子收集区材料12a、缓冲层材料13a、光吸收区材料14a、势垒层材料15a和阳极接触区材料16a。参见图3的(b)。 Step 2: P+ doped In (1-y) Ga y P barrier layer material 15a is epitaxially grown on the surface of the light absorption region material 14a, where y=0.3, doping concentration 1e19cm -3 , thickness about 20nm; The barrier layer material 15a is epitaxially grown with a p+-doped In (1-y) Ga y P contact layer with y=0.3, a doping concentration of 2e19 cm -3 and a thickness of about 50 nm. Thereby, a material stack is formed, which is, in order from bottom to top, the electron collecting region material 12a, the buffer layer material 13a, the light absorption region material 14a, the barrier layer material 15a, and the anode contact region material 16a. See (b) of Figure 3.
步骤3：利用光刻及反应离子刻蚀技术刻蚀材料叠层，以形成台面，刻蚀后的材料叠层成为功能区的叠层，该叠层自下而上依次为电子收集区12、缓冲层13、光吸收区14、势垒层15和阳极接触区16。参见图3的(c)。Step 3: Use photolithography and reactive ion etching to etch the material stack to form the mesa. The etched material stack becomes the stack of the functional area, and the stack is the electron collection area 12 from the bottom to the top. The buffer layer 13, the light absorption region 14, the barrier layer 15, and the anode contact region 16. See (c) of FIG. 3.
步骤4：沉积SiO 2减反层17，厚度约400nm；利用光刻及干法刻蚀在减反层17中形成阴极接触孔和阳极接触孔，之后使用磁控溅射沉积金属Al，然后通过光刻和干法刻蚀去掉部分金属Al，保留的金属Al形成阴极电极111和阳极电极161，完成器件制备。参见图3的(d)。 Step 4: Deposit SiO 2 anti-reflective layer 17 with a thickness of about 400 nm; use photolithography and dry etching to form cathode contact holes and anode contact holes in the anti-reflective layer 17, then use magnetron sputtering to deposit metal Al, and then pass Part of the metal Al is removed by photolithography and dry etching, and the remaining metal Al forms the cathode electrode 111 and the anode electrode 161 to complete the device preparation. See (d) of Figure 3.
根据本实施例，由于光吸收区14和阳极接触区16之间形成有势垒层15，该势垒层15阻挡光吸收区14生成的电子往阳极电极161扩散，因此，在该光吸收区14中，电子只能向阴极电极111的方向，由此，在该单向载流子传输光电探测器1中，电子进行单向流动。在该单向载流子传输光电探测器1中，由电子作为唯一活性载流子，因而更适用于高入射光强和大电流的高速输出。According to this embodiment, since the barrier layer 15 is formed between the light absorption region 14 and the anode contact region 16, the barrier layer 15 blocks the electrons generated by the light absorption region 14 from diffusing toward the anode electrode 161. Therefore, in the light absorption region In 14, electrons can only be directed in the direction of the cathode electrode 111, whereby in the unidirectional carrier transport photodetector 1, electrons flow unidirectionally. In this unidirectional carrier transport photodetector 1, electrons are used as the only active carriers, so it is more suitable for high-speed output of high incident light intensity and large current.
以上结合具体的实施方式对本申请进行了描述，但本领域技术人员应该清楚，这些描述都是示例性的，并不是对本申请保护范围的限制。本领域技术人员可以根据本申请的精神和原理对本申请做出各种变型和修改，这些变型和修改也在本申请的范围内。The present application has been described above in conjunction with specific implementations, but those skilled in the art should understand that these descriptions are exemplary and do not limit the protection scope of the present application. Those skilled in the art can make various variations and modifications to the present application according to the spirit and principle of the present application, and these variations and modifications are also within the scope of the present application.

Claims (10)

  1. 一种单向载流子传输光电探测器，其中，包括：位于衬底表面的阴极接触层，所述阴极接触层用于和阴极电极接触；位于所述阴极接触层表面的电子收集区；位于所述电子收集区表面的缓冲层；位于所述缓冲层表面的光吸收区，所述光吸收区的材料为锗锡(GeSn)，所述光吸收区吸收光并生成电子和空穴；位于所述光吸收区表面的势垒层，所述势垒层与所述光吸收区的界面形成导带带阶，所述带阶阻止所述光吸收区生成的电子穿过所述界面；以及位于所述势垒层表面的阳极接触区，所述阳极接触层用于和阳极电极接触，其中，所述电子收集区用于收集所述光吸收区生成的电子，所述缓冲层用于缓冲所述电子收集区和所述光吸收区之间的应力。A unidirectional carrier transport photodetector, comprising: a cathode contact layer on the surface of the substrate, the cathode contact layer is used for contacting with the cathode electrode; an electron collection area on the surface of the cathode contact layer; A buffer layer on the surface of the electron collection region; a light absorption region on the surface of the buffer layer, the material of the light absorption region is germanium tin (GeSn), the light absorption region absorbs light and generates electrons and holes; A barrier layer on the surface of the light absorption region, the interface of the barrier layer and the light absorption region forms a conduction band band step, the band step prevents electrons generated by the light absorption region from passing through the interface; and An anode contact region located on the surface of the barrier layer, the anode contact layer being used for contacting with the anode electrode, wherein the electron collecting region is used for collecting electrons generated by the light absorbing region, and the buffer layer is used for buffering The stress between the electron collection region and the light absorption region.
  2. 如权利要求1所述的单向载流子传输光电探测器，其中，所述电子收集区、所述缓冲层、所述光吸收区、所述势垒层以及所述阳极接触区形成的叠层的横向尺寸小于所述阴极接触区的横向尺寸，所述单向载流子传输光电探测器还具有减反射层，其覆盖于所述叠层的侧壁、所述阳极接触区的表面、以及所述阴极接触层从所述叠层两侧露出的表面。The unidirectional carrier transport photodetector of claim 1, wherein the electron collection region, the buffer layer, the light absorption region, the barrier layer, and the anode contact region form a stack The lateral dimension of the layer is smaller than the lateral dimension of the cathode contact area, the unidirectional carrier transport photodetector also has an anti-reflection layer, which covers the side wall of the stack, the surface of the anode contact area, And the surface of the cathode contact layer exposed from both sides of the stack.
  3. 如权利要求2所述的单向载流子传输光电探测器，其中，所述阴极电极位于所述阴极接触层从所述叠层两侧露出的表面，所述阳极电极位于所述阳极接触区的表面。The unidirectional carrier transport photodetector according to claim 2, wherein the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the anode contact area s surface.
  4. 如权利要求1所述的单向载流子传输光电探测器，其中，所述阴极接触层和所述电子收集区分别是n型掺杂的硅材料和非掺杂的硅材料。The unidirectional carrier transport photodetector of claim 1, wherein the cathode contact layer and the electron collection region are n-doped silicon material and undoped silicon material, respectively.
  5. 如权利要求4所述的单向载流子传输光电探测器，其中，所述缓冲层是非掺杂的锗(Ge)材料或非掺杂的锗硅(GeSi)材料。The unidirectional carrier transport photodetector according to claim 4, wherein the buffer layer is an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material.
  6. 如权利要求4所述的单向载流子传输光电探测器，其中，所述势垒层的材料与所述光吸收区的材料的晶格常数相差±10％以内。The unidirectional carrier transport photodetector according to claim 4, wherein a lattice constant of the material of the barrier layer and the material of the light absorption region is within ±10%.
  7. 如权利要求4所述的单向载流子传输光电探测器，其中，所述阳极接触层 材料为p型掺杂的锗或III-V族材料。The unidirectional carrier transport photodetector according to claim 4, wherein the anode contact layer material is p-type doped germanium or a III-V group material.
  8. 一种单向载流子传输光电探测器的制造方法，其中，包括：A method for manufacturing a unidirectional carrier transmission photodetector, which includes:
    在衬底表面沉积阴极接触层；Deposit a cathode contact layer on the substrate surface;
    在所述阴极接触层表面形成叠层，所述叠层自下而上依次包括电子收集区、缓冲层、光吸收区、势垒层和阳极接触区，所述叠层的横向尺寸小于所述阴极接触区的横向尺寸；以及A stack is formed on the surface of the cathode contact layer, and the stack includes an electron collecting region, a buffer layer, a light absorbing region, a barrier layer, and an anode contact region in sequence from the bottom to the top. The lateral dimension of the stack is smaller than the The lateral dimensions of the cathode contact area; and
    形成阴极电极和阳极电极，所述阴极电极位于所述阴极接触层从所述叠层两侧露出的表面，所述阳极电极位于所述阳极接触区的表面，Forming a cathode electrode and an anode electrode, the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact area,
    其中，所述光吸收区的材料为锗锡(GeSn)，所述光吸收区吸收光并生成电子和空穴，Wherein, the material of the light absorption region is germanium tin (GeSn), the light absorption region absorbs light and generates electrons and holes,
    所述势垒层与所述光吸收区的界面形成导带带阶，所述带阶阻止所述光吸收区生成的电子穿过所述界面，The interface between the barrier layer and the light absorption region forms a conduction band band step, which prevents the electrons generated by the light absorption region from passing through the interface,
    所述电子收集区用于收集所述光吸收区生成的电子，所述缓冲层用于缓冲所述电子收集区和所述光吸收区之间的应力。The electron collection area is used to collect the electrons generated by the light absorption area, and the buffer layer is used to buffer the stress between the electron collection area and the light absorption area.
  9. 如权利要求8所述的单向载流子传输光电探测器的制造方法，其中，形成所述叠层的步骤包括：The method for manufacturing a unidirectional carrier transport photodetector according to claim 8, wherein the step of forming the stack includes:
    在所述阴极接触层表面自下而上依次沉积电子收集区材料、缓冲层材料、光吸收区材料、势垒层材料和阳极接触区材料，以形成材料叠层；Depositing materials of electron collection region, buffer layer material, light absorption region material, barrier layer material and anode contact region material on the surface of the cathode contact layer in order from bottom to top to form a material stack;
    刻蚀所述材料叠层，以缩小所述材料叠层的横向尺寸，形成所述叠层，所述叠层和所述阴极接触层之间形成台面。The material stack is etched to reduce the lateral dimension of the material stack to form the stack, and a mesa is formed between the stack and the cathode contact layer.
  10. 如权利要求8所述的单向载流子传输光电探测器的制造方法，其中，所述方法还包括：The method for manufacturing a unidirectional carrier transport photodetector according to claim 8, wherein the method further comprises:
    沉积减反射层，其覆盖于所述叠层的侧壁、所述阳极接触区的表面、以及所述阴极接触层从所述叠层两侧露出的表面；Depositing an anti-reflection layer covering the side wall of the stack, the surface of the anode contact area, and the surface of the cathode contact layer exposed from both sides of the stack;
    其中，形成阴极电极和阳极电极的步骤包括：Among them, the steps of forming the cathode electrode and the anode electrode include:
    刻蚀所述减反射层的一部分，形成阴极接触孔和阳极接触孔；Etching a part of the anti-reflection layer to form a cathode contact hole and an anode contact hole;
    在所述减反射层表面沉积导电材料，并刻蚀掉部分所述导电材料，保留在所述阴极接触孔和所述阳极接触孔内的导电材料形成所述阴极电极和所述阳极电极。A conductive material is deposited on the surface of the anti-reflection layer, and part of the conductive material is etched away, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode and the anode electrode.
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