WO2020107784A1 - Photodétecteur de transport de porteurs de charge unidirectionnel et son procédé de fabrication - Google Patents

Photodétecteur de transport de porteurs de charge unidirectionnel et son procédé de fabrication Download PDF

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WO2020107784A1
WO2020107784A1 PCT/CN2019/083947 CN2019083947W WO2020107784A1 WO 2020107784 A1 WO2020107784 A1 WO 2020107784A1 CN 2019083947 W CN2019083947 W CN 2019083947W WO 2020107784 A1 WO2020107784 A1 WO 2020107784A1
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light absorption
layer
stack
absorption region
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PCT/CN2019/083947
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Chinese (zh)
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汪巍
方青
余明斌
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上海新微技术研发中心有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of semiconductor technology, in particular to a unidirectional carrier transmission photodetector and a manufacturing method thereof.
  • GeSn material As a new type of four-group alloy material, GeSn material has a large absorption coefficient in near infrared and even short-wave infrared, and is an ideal material for preparing Si infrared photodetectors.
  • GeSn infrared detectors have received extensive research. Wei Du and other authors published a surface-receiving GeSn photodetector in its "Silicon-based Ge0.89Sn0.11 photodetector and light emitters-towards mid-infrared applications", with an 11% SnS GeSn alloy as absorption Layer, its optical response range extends to the 3 ⁇ m band.
  • the carriers of the photodetector include holes and electrons. Since holes move slowly in the depletion region, the carrier migration time mainly depends on the space The transport time of holes; and, when the input current or power increases, holes with low mobility form accumulation in the transport, which deforms the potential distribution, hinders the collection of photogenerated carriers, and saturates the output photocurrent.
  • the embodiments of the present application provide a unidirectional carrier-transmitting photodetector and a manufacturing method thereof.
  • the electron is used as the only active carrier, so it is more suitable for high incident light intensity and high current output at high speed.
  • germanium tin is used as a light absorption layer, the material can have a wider detection range in the infrared band, and greatly improve the electron mobility, which is conducive to the realization of high-power high-speed unidirectional carrier transmission detection.
  • a unidirectional carrier transmission photodetector including:
  • a light absorption region on the surface of the buffer layer the material of the light absorption region is germanium tin (GeSn), and the light absorption region absorbs light and generates electrons and holes;
  • a barrier layer located on the surface of the light absorption region, and the conduction band at the interface of the barrier layer and the light absorption region forms a conduction band step, which prevents the electrons generated by the light absorption region from passing through Interface;
  • An anode contact region located on the surface of the barrier layer, the anode contact layer being used for contacting with the anode electrode, wherein the electron collecting region is used for collecting electrons generated by the light absorbing region, and the buffer layer is used for buffering The stress between the electron collection region and the light absorption region.
  • the unidirectional carrier transport photodetector also has an anti-reflection layer covering the side wall of the stack, the surface of the anode contact area, and the cathode contact layer from The exposed surfaces on both sides of the laminate.
  • the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact region.
  • the cathode contact layer and the electron collection region are respectively n-doped silicon material and undoped silicon material.
  • the buffer layer is an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material.
  • the material of the barrier layer differs from the material of the light absorption region by a lattice constant within ⁇ 10%.
  • anode contact layer material is p-type doped germanium or III-V group material.
  • a method for manufacturing a unidirectional carrier transmission photodetector includes:
  • a stack is formed on the surface of the cathode contact layer, and the stack includes an electron collecting region, a buffer layer, a light absorbing region, a barrier layer, and an anode contact region in order from the bottom to the top.
  • a cathode electrode and an anode electrode are formed, the cathode electrode is located on the surface of the cathode contact layer exposed from both sides of the stack, and the anode electrode is located on the surface of the anode contact area.
  • the step of forming the stack includes:
  • the material stack is etched to reduce the lateral dimension of the material stack to form the stack, and a mesa is formed between the stack and the cathode contact layer.
  • the method further includes:
  • the steps of forming the cathode electrode and the anode electrode include:
  • a conductive material is deposited on the surface of the anti-reflection layer, and part of the conductive material is etched away, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode and the anode electrode.
  • Electrons are the only active carriers, so they are more suitable for high-intensity light output and high-speed high-speed output.
  • the use of germanium-tin material as the light absorption layer can have a wider detection range in the infrared band and greatly improve Electron mobility, which is conducive to the realization of high-power high-speed one-way carrier transmission detection.
  • Example 1 is a schematic cross-sectional view of a unidirectional carrier transmission photodetector according to Example 1 of the present application;
  • FIG. 2 is a schematic diagram of a method for manufacturing a unidirectional carrier transmission photodetector according to Example 2 of the present application;
  • FIG 3 is a cross-sectional view of the device corresponding to each step in Embodiment 2 of the present application.
  • the direction parallel to the surface of the substrate is referred to as “lateral direction”, and the direction perpendicular to the surface of the substrate is referred to as “longitudinal direction”, where the “ “Thickness” refers to the dimension of the component in the "longitudinal direction”.
  • the direction from the substrate to the anode contact layer is called the “upper” direction, and the direction opposite to the "upper” direction is the “downward” direction.
  • This embodiment provides a unidirectional carrier transmission photodetector.
  • FIG. 1 is a schematic cross-sectional view of the unidirectional carrier transport photodetector of this embodiment.
  • the unidirectional carrier transmission photodetector 1 includes:
  • the electron collection area 12 located on the surface of the cathode contact layer 11;
  • the barrier layer 15 on the surface of the light absorption region 14 and the interface between the barrier layer 15 and the light absorption region 14 form a conduction band band step that prevents electrons generated by the light absorption region 14 from passing through the interface;
  • the anode contact region 16 located on the surface of the barrier layer 15 is used to contact the anode electrode 161.
  • the electron collection area 12 is used to collect the electrons generated by the light absorption area 14.
  • the buffer layer 13 serves to buffer the stress between the electron collection region 12 and the light absorption region 14.
  • the barrier layer 15 since the barrier layer 15 is formed between the light absorption region 14 and the anode contact region 16, the barrier layer 15 blocks the electrons generated by the light absorption region 14 from diffusing toward the anode electrode 161. Therefore, in the light absorption region 14 In electrons, electrons can only be directed in the direction of the cathode electrode 111, and thus, in the unidirectional carrier transport photodetector 1, electrons flow unidirectionally. In this unidirectional carrier transport photodetector 1, electrons are used as the only active carriers, so it is more suitable for high-speed output of high incident light intensity and large current.
  • the germanium-tin material is used to form the light absorption region 14 so that the unidirectional carrier transmission photodetector 1 has a wider detection range in the infrared band; and, the electrons in the germanium-tin material
  • the mobility is very high, which can further increase the response speed of the unidirectional carrier transmission photodetector 1, thereby facilitating high-power and high-speed unidirectional carrier transmission detection.
  • the substrate 10 may be a substrate commonly used in semiconductor processes, for example, bulk silicon, silicon on insulator (SOI), or silicon germanium.
  • SOI silicon on insulator
  • the cathode contact layer 11 and the electron collection region 12 are respectively n-type doped silicon material and undoped (ie, intrinsic) silicon material, wherein the cathode contact layer 11 may be heavily doped, for example N-type doped silicon material.
  • the cathode contact layer 11 and the electron collecting region 12 may not be limited to silicon materials, but other semiconductor materials.
  • the buffer layer 13 may be an undoped germanium (Ge) material or an undoped silicon germanium (GeSi) material. Therefore, the buffer layer 13 may be used to buffer the electron collection region 12 and the light absorption region 14 Between the stress, improve the quality of the material.
  • the light absorption region 14 may be a p-type Ge (1-x) Sn x material.
  • the absorption efficiency can be increased and the detection range can be widened.
  • the composition of Sn can be greater than 0 and less than 40% (molar ratio), that is, 0 ⁇ x ⁇ 0.4
  • the detection range of the detector in the infrared band is widened, and the migration rate of electrons is increased.
  • the light absorption region 14 is p-type, and therefore, the holes generated by the light absorption region 14 will be quickly absorbed by the anode electrode 161 directly during the relaxation time, and no holes drift in the depletion region ( drift), thereby improving the response speed of the photodetector.
  • the light absorption region 14 is an intrinsic (ie, undoped) region, the holes generated by the light absorption region 14 need to drift to a p-type region (eg, anode contact region 16, etc.) by As a result, the hole transport time is extended and the response speed of the photodetector is reduced.
  • the lattices of the material of the barrier layer 15 and the material of the light absorption region 14 can be matched or nearly matched, for example, the lattice constants of the two can be within ⁇ 10%.
  • the barrier layer 15 may use silicon germanium (SiGe), or a group III-V material that closely matches the lattice of germanium tin (GeSn).
  • the group III-V material may be, for example, indium aluminum phosphorus (InAlP) ), Indium Aluminum Arsenide (InAlAs), Indium Gallium Phosphorus (InGaP), or Indium Gallium Arsenide (InGaAs), where the lattice constants of Group III-V materials can be adjusted by adjusting the composition of each element in Group III-V materials
  • the lattice of the germanium tin (GeSn) material of the light absorption region 14 is matched or nearly matched.
  • the material of the anode contact layer 16 is p-type doped germanium or a III-V group material, where the doping concentration may be, for example, heavily doped, that is, p+ doped.
  • the lateral dimension of the stack formed by the electron collecting region 12, the buffer layer 13, the light absorbing region 14, the barrier layer 15 and the anode contact region 16 is smaller than the lateral dimension of the cathode contact region 11
  • a mesa is formed between the stack and the cathode contact region 11.
  • the unidirectional carrier transport photodetector 1 further has an anti-reflection layer 17, which covers the side wall of the stack, the surface of the anode contact region 16, and the cathode contact region 11 Surface exposed from both sides of the stack.
  • the material of the anti-reflection layer 17 may be silicon oxide, for example.
  • the cathode electrode 111 is located on the surface of the cathode contact layer 11 exposed from both sides of the stack, and the anode electrode 161 is located on the surface of the anode contact region 16.
  • the light absorption region 14 absorbs photons and generates photo-generated electrons and holes.
  • the photogenerated electrons diffuse into the depleted electron collection region 12 and drift to the cathode under the action of the electric field, that is, the electrons are transported in one direction.
  • An effective band step is formed at the interface conduction band of the barrier layer 15 and the light absorbing region 14, thereby preventing the diffusion of photogenerated electrons toward the anode.
  • the photogenerated holes can be quickly collected by the anode electrode 161 during the dielectric relaxation time because the light absorption region 14 is p-type.
  • the optical response of the germanium-tin germanium one-way carrier transmission photodetector is mainly determined by the electron transport. Because the germanium-tin material has a high electron mobility, it is more conducive to high-power high-speed photoelectric detection.
  • a high-power high-speed germanium tin unidirectional carrier transmission photodetector facing the infrared band can be provided.
  • the unidirectional carrier-transmitting photodetector has the following priorities: First, compared with traditional III-V, II-VI infrared detectors, since the present invention uses GeSn material which is the same as Si group IV as the absorption layer Therefore, it can be compatible with the existing CMOS process; second, compared with the traditional pin photodetector, the silicon germanium tin unidirectional carrier transmission photodetector of the present invention is more suitable for high incident light intensity and large current High-speed output; third, the present invention uses a germanium-tin material as the light absorption region, which can achieve a wider detection range and greater saturation power.
  • Embodiment 2 provides a method for manufacturing a unidirectional carrier transport photodetector, which is used to manufacture the unidirectional carrier transport photodetector described in Embodiment 1.
  • FIG. 2 is a schematic diagram of the manufacturing method of the unidirectional carrier transport photodetector of this embodiment. As shown in FIG. 2, in this embodiment, the manufacturing method may include:
  • Step 201 Deposit a cathode contact layer 11 on the surface of the substrate 10;
  • Step 202 a stack is formed on the surface of the cathode contact layer 11.
  • the stack includes an electron collecting region 12, a buffer layer 13, a light absorbing region 14, a barrier layer 15 and an anode contact region 16 in order from bottom to top.
  • the lateral dimension of the stack is smaller than the lateral dimension of the cathode contact area 11;
  • Step 203 forming a cathode electrode 111 and an anode electrode 161, the cathode electrode 111 is located on the surface of the cathode contact layer 11 exposed from both sides of the stack, and the anode electrode 161 is located on the surface of the anode contact region 16.
  • the material of the light absorption region 14 is germanium tin (GeSn), and the light absorption region 14 absorbs light and generates electrons and holes.
  • the interface of the barrier layer 15 and the light absorption region 14 forms a conduction band band step, which prevents electrons generated by the light absorption region 14 from passing through the interface.
  • the electron collection area 12 is used to collect the electrons generated by the light absorption area 14.
  • the buffer layer 13 serves to buffer the stress between the electron collection region 12 and the light absorption region 14.
  • the method may further include before step 203:
  • Step 204 Deposit an anti-reflection layer 17, which covers the side wall of the stack, the surface of the anode contact region 16, and the surface of the cathode contact layer 11 exposed from both sides of the stack.
  • step 203 may include:
  • Step 2031 etching a part of the anti-reflection layer 17 to form a cathode contact hole and an anode contact hole;
  • Step 2032 Deposit a conductive material on the surface of the anti-reflection layer 17, and etch away part of the conductive material, and the conductive material remaining in the cathode contact hole and the anode contact hole forms the cathode electrode 111 and the anode electrode 161.
  • step 203 may directly deposit conductive material on the side wall of the stack, the surface of the anode contact region 16, and the surface of the cathode contact layer 11 exposed from both sides of the stack, and retain part of the conductive material by etching to form Cathode electrode 111 and anode electrode 161.
  • step 202 may include the following steps:
  • Step 301 Deposit electron collection region material 12a, buffer layer material 13a, light absorption region material 14a, barrier layer material 15a and anode contact region material 16a on the surface of the cathode contact layer 11 from bottom to top to form a material stack;
  • Step 302 Etch the material stack to reduce the lateral dimension of the material stack to form a stack, and form a mesa between the stack and the cathode contact layer 11.
  • the substrate is silicon.
  • FIG. 3 is a cross-sectional view of the device corresponding to each step in this example.
  • the manufacturing method of the unidirectional carrier transmission photodetector includes the following steps:
  • Step 1 Clean the substrate 10; epitaxially grow an n+ doped Si contact layer on the surface of the substrate 10, that is, the cathode contact layer 11 with a doping concentration of 2e19cm -3 and a thickness of about 1 ⁇ m; epitaxially grow the surface of the cathode contact layer 11
  • the Si collection layer that is, the electron collection region material 12a, with a thickness of about 300nm
  • the SiGe buffer layer material 13a is epitaxially grown on the surface of the electron collection region material 12a, with a thickness of about 50nm, and the Ge composition is 30% (molar ratio)
  • a material stack is formed, which is, in order from bottom to top, the electron collecting region material 12a, the buffer layer material 13a, the light absorption region material 14a, the barrier layer material 15a, and the anode contact region material 16a. See (b) of Figure 3.
  • Step 3 Use photolithography and reactive ion etching to etch the material stack to form the mesa.
  • the etched material stack becomes the stack of the functional area, and the stack is the electron collection area 12 from the bottom to the top.
  • Step 4 Deposit SiO 2 anti-reflective layer 17 with a thickness of about 400 nm; use photolithography and dry etching to form cathode contact holes and anode contact holes in the anti-reflective layer 17, then use magnetron sputtering to deposit metal Al, and then pass Part of the metal Al is removed by photolithography and dry etching, and the remaining metal Al forms the cathode electrode 111 and the anode electrode 161 to complete the device preparation. See (d) of Figure 3.
  • the barrier layer 15 since the barrier layer 15 is formed between the light absorption region 14 and the anode contact region 16, the barrier layer 15 blocks the electrons generated by the light absorption region 14 from diffusing toward the anode electrode 161. Therefore, in the light absorption region In 14, electrons can only be directed in the direction of the cathode electrode 111, whereby in the unidirectional carrier transport photodetector 1, electrons flow unidirectionally. In this unidirectional carrier transport photodetector 1, electrons are used as the only active carriers, so it is more suitable for high-speed output of high incident light intensity and large current.

Abstract

La présente invention concerne un photodétecteur de transport de porteurs de charge unidirectionnel et son procédé de fabrication. Ledit photodétecteur comprend : une couche de contact de cathode située sur une surface d'un substrat, la couche de contact de cathode étant utilisée pour entrer en contact avec une électrode de cathode ; une région de collecte d'électrons située sur une surface de la couche de contact de cathode ; une couche tampon située sur une surface de la région de collecte d'électrons ; et une région d'absorption de lumière située sur une surface de la couche tampon, le matériau de la région d'absorption de lumière étant de l'étain de germanium, et la région d'absorption de lumière absorbant la lumière et générant des électrons et des trous ; une couche barrière située sur une surface de la région d'absorption de lumière, l'interface entre la couche barrière et la région d'absorption de lumière formant un étage de bande de conduction, et l'étage de bande empêchant les électrons générés par la région d'absorption de lumière de passer à travers l'interface ; et une région de contact d'anode située sur une surface de la couche barrière. La présente invention est avantageuse pour réaliser une détection de transport de porteurs de charge unidirectionnelle à haute puissance et grande vitesse.
PCT/CN2019/083947 2018-11-27 2019-04-23 Photodétecteur de transport de porteurs de charge unidirectionnel et son procédé de fabrication WO2020107784A1 (fr)

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CN201811428096.6A CN111312827B (zh) 2018-11-27 2018-11-27 一种单向载流子传输光电探测器及其制造方法
CN201811428096.6 2018-11-27

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US20140053894A1 (en) * 2012-08-23 2014-02-27 Radek Roucka GRADED GeSn ON SILICON
CN104300013A (zh) * 2014-05-05 2015-01-21 重庆大学 带有应变源的GeSn红外探测器
CN105514209A (zh) * 2015-12-17 2016-04-20 西安电子科技大学 基于GeSn红外探测器的红外夜视仪
CN105789347A (zh) * 2016-03-02 2016-07-20 西安电子科技大学 基于GeSn-GeSi材料的异质型光电晶体管及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113540289A (zh) * 2021-07-13 2021-10-22 广东工业大学 一种拓宽光响应波段的太阳能电池薄膜的制备方法
CN113540289B (zh) * 2021-07-13 2023-01-13 广东工业大学 一种拓宽光响应波段的太阳能电池薄膜的制备方法

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