JP2011077293A - 多接合型太陽電池 - Google Patents
多接合型太陽電池 Download PDFInfo
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- JP2011077293A JP2011077293A JP2009227174A JP2009227174A JP2011077293A JP 2011077293 A JP2011077293 A JP 2011077293A JP 2009227174 A JP2009227174 A JP 2009227174A JP 2009227174 A JP2009227174 A JP 2009227174A JP 2011077293 A JP2011077293 A JP 2011077293A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 10
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】p型Ge基板を含む下部セル層12と、第2のトンネル接合層14と、InGaAsからなる中間セル層15と、第1のトンネル接合層16と、InGaPからなる上部セル層17と、表面電極18とで構成され、第2のトンネル接合層14は、Siドープのn型InGaP層141とCドープのp型AlGaAs層142とで挟持された中間ナローバンドギャップ層であるInSb層14aからなり、第1のトンネル接合層16は、Siドープのn型InGaP層161とCドープのp型AlGaAs層162とで挟持された中間ナローバンドギャップ層であるInSb16aからなっている。
【選択図】図2
Description
図2は、本発明の多接合型太陽電池の一実施例を説明するための構成図で、この多接合型太陽電池は、バンドギャップの異なる複数の半導体pn接合を直列接続する多接合型太陽電池である。
2,12 p型Ge基板を含む下部セル層
3,13 Siドープのn型(In)GaAsからなるバッファ層
4,14 第2のトンネル接合層
5,15 InGaAsからなる中間セル層
6,16 第1のトンネル接合層
7,17 InGaPからなる上部セル層
8,18 n型コンタクト層
9,19 表面電極
10,20 反射防止膜
14a 第2の中間ナローバンドギャップ層
16a 第1の中間ナローバンドギャップ層
21,121 p型Ge基板
22,122 n型Ge層
41,141 Siドープのn型InGaP層
42,142 Cドープのp型AlGaAs層
51,151 Znドープのp型InGaP層
52,152 Znドープのp型(In)GaAs層
53,153 Siドープのn型(In)GaAs層
54,154 Siドープのn型AlInP層
61,161 Siドープのn型InGaP層
62,162 Cドープのp型AlGaAs層
71,171 Znドープのp型AlInP層
72,172 Znドープのp型InGaP層
73,173 Siドープのn型InGaP層
74,174 Siドープのn型AlInP層
Claims (4)
- バンドギャップの異なる複数の半導体pn接合を直列接続する多接合型太陽電池において、
前記pn接合間が、トンネル接合層を介して接続され、該トンネル接合層中に、該トンネル接合よりも下層にあるpn接合を形成している化合物半導体に比べて小さいバンドギャップエネルギーを持つ化合物半導体層を含むことを特徴とする多接合型太陽電池。 - 前記化合物半導体層が、As及び/又はSbを含む化合物半導体であることを特徴とする請求項1に記載の多接合型太陽電池。
- 前記化合物半導体層が、InSb,GaSb,InGaSb,InAlSb,InAs,InGaAs,InAsSb,GaAsSb,InGaAsSbの何れかからなることを特徴とする請求項2に記載の多接合型太陽電池。
- 前記化合物半導体層の厚さが、6Å以上100Å以下であることを特徴とする請求項1に記載の多接合型太陽電池。
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JP2009227174A JP5481665B2 (ja) | 2009-09-30 | 2009-09-30 | 多接合型太陽電池 |
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JP2009227174A JP5481665B2 (ja) | 2009-09-30 | 2009-09-30 | 多接合型太陽電池 |
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JP2011077293A true JP2011077293A (ja) | 2011-04-14 |
JP5481665B2 JP5481665B2 (ja) | 2014-04-23 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651417A (zh) * | 2012-05-18 | 2012-08-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳能电池及其制备方法 |
JP5559370B1 (ja) * | 2013-02-01 | 2014-07-23 | 日本電信電話株式会社 | 太陽電池 |
JP2015046572A (ja) * | 2013-07-30 | 2015-03-12 | 株式会社リコー | 化合物半導体太陽電池 |
WO2016139970A1 (ja) * | 2015-03-05 | 2016-09-09 | 住友電気工業株式会社 | 半導体積層体および半導体装置 |
US9653621B2 (en) | 2012-03-19 | 2017-05-16 | Toyota Jidosha Kabushiki Kaisha | Semiconductor apparatus |
EP3667742A1 (de) * | 2018-12-14 | 2020-06-17 | AZUR SPACE Solar Power GmbH | Stapelförmige monolithische aufrecht-metamorphe mehrfachsolarzelle |
US11313981B2 (en) | 2017-02-28 | 2022-04-26 | The University Of Sussex | X-ray and γ-ray photodiode |
RU2797929C2 (ru) * | 2017-02-28 | 2023-06-13 | Дзе Юниверсити Оф Сассекс | Рентгеновский и гамма-лучевой фотодиод |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112764A (en) * | 1979-12-31 | 1981-09-05 | Chevron Res | Multiilayer photoelectric solar cell |
US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
-
2009
- 2009-09-30 JP JP2009227174A patent/JP5481665B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112764A (en) * | 1979-12-31 | 1981-09-05 | Chevron Res | Multiilayer photoelectric solar cell |
US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9653621B2 (en) | 2012-03-19 | 2017-05-16 | Toyota Jidosha Kabushiki Kaisha | Semiconductor apparatus |
CN102651417A (zh) * | 2012-05-18 | 2012-08-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳能电池及其制备方法 |
CN102651417B (zh) * | 2012-05-18 | 2014-09-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳能电池及其制备方法 |
JP5559370B1 (ja) * | 2013-02-01 | 2014-07-23 | 日本電信電話株式会社 | 太陽電池 |
JP2015046572A (ja) * | 2013-07-30 | 2015-03-12 | 株式会社リコー | 化合物半導体太陽電池 |
WO2016139970A1 (ja) * | 2015-03-05 | 2016-09-09 | 住友電気工業株式会社 | 半導体積層体および半導体装置 |
US11313981B2 (en) | 2017-02-28 | 2022-04-26 | The University Of Sussex | X-ray and γ-ray photodiode |
RU2797929C2 (ru) * | 2017-02-28 | 2023-06-13 | Дзе Юниверсити Оф Сассекс | Рентгеновский и гамма-лучевой фотодиод |
EP3667742A1 (de) * | 2018-12-14 | 2020-06-17 | AZUR SPACE Solar Power GmbH | Stapelförmige monolithische aufrecht-metamorphe mehrfachsolarzelle |
CN111326597A (zh) * | 2018-12-14 | 2020-06-23 | 阿聚尔斯佩西太阳能有限责任公司 | 堆叠状的单片的正置变质的多结太阳能电池 |
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