CN105576072A - Low-noise avalanche photodetector and preparation method thereof - Google Patents
Low-noise avalanche photodetector and preparation method thereof Download PDFInfo
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- CN105576072A CN105576072A CN201610047625.2A CN201610047625A CN105576072A CN 105576072 A CN105576072 A CN 105576072A CN 201610047625 A CN201610047625 A CN 201610047625A CN 105576072 A CN105576072 A CN 105576072A
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- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 14
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 8
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910005898 GeSn Inorganic materials 0.000 claims description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- 230000035945 sensitivity Effects 0.000 description 2
- 230000001550 time effect Effects 0.000 description 2
- -1 AlGaAsSb Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a low-noise avalanche photodetector and a preparation method thereof. The low-noise avalanche photodetector comprises an N-type ohmic contact layer/P-type ohmic contact layer, a multiplication layer, a charge layer and a P-type ohmic contact layer/N-type ohmic contact layer with different doping types which are formed through diffusion and ion injection, and a substrate is formed at the bottom between the charge layer and the P-type ohmic contact layer/N-type ohmic contact layer; an inverted trapezoidal groove is formed among the charge layer, the P-type ohmic contact layer/N-type ohmic contact layer and the substrate; and an absorbed layer is formed in the inverted trapezoidal groove. A P-type electrode and an N-type electrode are arranged on the P-type ohmic contact layer and the N-type ohmic contact layer respectively. The low-noise avalanche photodetector has the characteristic that a one-dimensional longitudinal avalanche photodetector is of a two-dimensional transverse structure, and the effective thickness of the multiplication layer is reduced to a nanometer size, so that the k value is reduced by using the dead-time effect of a nanometer multiplication area.
Description
Technical field
The invention belongs to field of photoelectric technology, be related specifically to a kind of low noise two-dimensional structure avalanche photodetector and manufacture method thereof.
Background technology
Photo-detector is device light signal being changed into the signal of telecommunication.In semiconductor photodetector, after the photo-generated carrier that incident photon inspires enters external circuit under applying bias, form measurable photoelectric current.Avalanche photodetector to the amplification of photoelectric current based on ionizing collision effect, under certain conditions, accelerated electronics and hole obtain enough energy, a pair new electron-hole pair can be produced with lattice collisions, this process is a kind of chain reaction, thus the pair of electrons-hole produced by light absorption forms larger secondary photocurrent to producing a large amount of electron-hole pairs by impact ionization.Therefore, in optical communication system, based on the optical receiver of avalanche photodetector compared with common photoelectric detector machine, sensitivity can improve more than 5dB.But we notice, due to the restriction of snowslide settling time, the bandwidth of operation of avalanche photodetector is more much lower than common photodetector simultaneously.Therefore, the frequency response characteristic improving avalanche photodetector is extremely important to its application in high speed optical communication system.For different actual demands, need to optimize respectively avalanche photodetector dynode layer and even whole absorption, gradual change, electric charge and gaining structure respectively.For avalanche photodetector, excess noise fact is the important parameter characterizing its noiseproof feature, excess noise fact is determined by the k value of avalanche photodetector usually, and at this, k is defined as the ratio of the impact ionization coefficient of dissimilar charge carrier (electronics or hole).K value is less, more favourable to the Frequency Response improving avalanche photodetector.Therefore, the k value how reducing avalanche photodetector is very crucial.
Current optical communication field commonly uses the multiplied material (body multiplied material) of avalanche photodetector, and comprise iii-v InP and InAlAs, its k value is respectively in the scope of 0.4-0.5 and 0.2-0.3; IV race Si, its k value is less than 0.1.
Summary of the invention
The technical problem to be solved in the present invention overcomes the deficiencies in the prior art, and provide a kind of low noise avalanche photodetector and preparation method thereof, to reduce effective k value of existing avalanche photodetector.
In order to solve the problems of the technologies described above, the present invention discloses a kind of low noise avalanche photodetector, it comprises the N-type ohmic contact layer/P type ohmic contact layer, dynode layer, charge layer, the P type ohmic contact layer/N-type ohmic contact layer that are formed different doping type by diffusion, ion implantation successively, and the bottom between charge layer and P type ohmic contact layer/N-type ohmic contact layer is formed with substrate; Described charge layer, P type ohmic contact layer/form an inverted trapezoidal groove between N-type ohmic contact layer and substrate; Absorbed layer is formed in described inverted trapezoidal groove; .
In addition, the present invention also discloses the preparation method of above-mentioned avalanche photodetector, and the method comprises:
S1. different region of doped material is made: form the N-type ohmic contact layer of different doping type/P type ohmic contact layer, dynode layer, charge layer, P type ohmic contact layer/N-type ohmic contact layer successively by the technique of diffusion, ion implantation, and the bottom between charge layer and P type ohmic contact layer/N-type ohmic contact layer is formed with substrate;
S2. by etching region of doped material, at charge layer, P type ohmic contact layer/form an inverted trapezoidal groove between N-type ohmic contact layer and substrate;
S3. on the inverted trapezoidal groove of etching, absorbed layer is prepared;
S4. P-type electrode and N-type electrode are produced on SiP type and N-type ohmic contact layer.
In technique scheme, described region of doped material is doping Si material area or doping InP material area.
In technique scheme, described dynode layer is Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb or HgCdTe; Described absorbed layer adopts material to be Ge, GeSn, InGaAs, GaAs, InAs.
Further, as performance optimization, preferably, before Ge absorbed layer is formed, SiGe transition zone has been prepared;
Further, as performance optimization, preferably, at the interface of InGaAs absorbed layer and N-type ohmic contact layer, InGaAsP transition zone has been prepared.
In technique scheme, waveguiding structure and photonic crystal, plasma is adopted to improve quantum efficiency.
Further, as performance optimization, above-mentioned obtained avalanche photodetector is formed one dimension or two-dimensional array.
This structure of low noise avalanche photodetector of the present invention be that to improve the longitudinal avalanche photodetector of one dimension be two-dimensional transversal structure, by reducing the effective thickness of dynode layer to nano-scale, utilize the dead time effect of nanometer multiplication region to fall low k-value.
Accompanying drawing explanation
Fig. 1 is the structural representation of Si/Ge avalanche photodetector in embodiment 1;
Fig. 2 is the electric field schematic diagram of avalanche photodetector in embodiment 1;
Fig. 3 is the structural representation of InP/InGaAs avalanche photodetector in embodiment 2.
Embodiment
Embodiment 1
As embodiment 1, the present invention discloses a kind of Si/Ge avalanche photodetector, and its structure as shown in Figure 1.This detector structurally includes but not limited to: P type ohmic contact layer 1, and absorbed layer 2, charge layer 3, dynode layer 4, heavily doped N-type ohmic contact layer 5 and Si substrate 6, wherein concrete structure parameter is as shown in table 1.
Table 1
Feature of the present invention is improvement one dimension avalanche photodetector is two-dimensional structure, utilizes dead time effect to fall low k-value.Described N-type and P type ohmic contact layer are that doping content is higher than 1.0 × 10 by carrying out highly doped formation at low-doped silicon layer side direction two ends
18/ cm
3.Described charge layer is between P type and N-type ohmic contact layer, adopt the P type or N-type doping formation that accurately control, and doping content scope is 1 × 10
17/ cm
3-9 × 10
17/ cm
3, the thickness of charge layer and doping content will restrict the electric field controlling absorbed layer and dynode layer mutually, make the electric field of dynode layer enough high to cause avalanche multiplication effect.And the electric field of absorbed layer is enough low to suppress leakage current, and the depletion region of avalanche photodetector can be made to exhaust completely.Dynode layer is made up of intrinsic or involuntary doped semiconductor materials, and its thickness selects the gain-bandwidth sum sensitivity will considering APD; The selection of described absorber thickness will ensure the quantum efficiency of detector, considers the electricity bandwidth of avalanche photodetector simultaneously.
The manufacture method of the above-mentioned Si/Ge avalanche photodetector that the present embodiment provides, comprises the following steps:
S1. make different doping InP material area, on InP, formed P type ohmic contact layer 7, dynode layer 8, charge layer 9, the heavily doped N-type ohmic contact layer 11 of different doping type by techniques such as diffusion, ion implantations successively; And the bottom between charge layer 9 and heavily doped N-type ohmic contact layer 11 is formed with InP substrate 12;
S2. by be etched on InP material area formed an inverted trapezoidal groove, namely at charge layer 9, form an inverted trapezoidal groove between heavily doped N-type ohmic contact layer 11 and InP substrate 12;
S3. on the inverted trapezoidal groove of etching, InGaAs absorbed layer region is produced.
The P-type electrode of Si/Ge avalanche photodetector and N-type electrode are produced on SiP type and N-type ohmic contact layer, pass through etched recesses, Ge absorbed layer can be grown on Si substrate, Ge epitaxial loayer does not have further growth Si epitaxial loayer, is therefore conducive to reducing dark current.Meanwhile, adopt this structure can the conveniently photonic absorption of control Ge absorbed layer and the motion of electronics, more easily carry out optical coupling, thus ensure the electricity bandwidth of device while obtaining high-quantum efficiency.After light enters into the intrinsic Ge absorbed layer of avalanche photodetector, under electric field action, see accompanying drawing 2, because of trapezoidal contact interface, its light induced electron produced can arrive Si dynode layer under electric field action, and a series of multiplicative process occurs subsequently.
Embodiment 2
As embodiment 2, the present invention discloses a kind of InP/InGaAs avalanche photodetector, and its structure is shown in accompanying drawing 3.This detector structurally includes but not limited to: P type ohmic contact layer 7, dynode layer 8, charge layer 9, absorbed layer 10, heavily doped N-type ohmic contact layer 11 and InP substrate 12, wherein concrete structure parameter is as shown in table 2.
Table 2
The present embodiment 2 provides the manufacture method of above-mentioned InP/InGaAs avalanche photodetector, comprises the following steps:
S1. make different doping InP material area, on InP, formed P type ohmic contact layer 7, dynode layer 8, charge layer 9, the heavily doped N-type ohmic contact layer 11 of different doping type by techniques such as diffusion, ion implantations successively; And the bottom between charge layer 9 and heavily doped N-type ohmic contact layer 11 is formed with InP substrate 12;
S2. by be etched on InP material area formed an inverted trapezoidal groove, namely at charge layer 9, form an inverted trapezoidal groove between heavily doped N-type ohmic contact layer 11 and InP substrate 12;
S3. on the inverted trapezoidal groove of etching, InGaAs absorbed layer region is produced.
On the P type that the P-type electrode of InP/InGaAs avalanche photodetector and N-type electrode are produced in InP and N-type ohmic contact layer, by etched recesses, InGaAs absorbed layer can be grown in InP substrate.After light enters into the eigen I nGaAs absorbed layer of avalanche photodetector, under electric field action, its light induced electron produced can arrive InP dynode layer under electric field action, and a series of multiplicative process occurs subsequently.
Finally it should be noted that, above embodiment is only for Si and InP material, technical scheme of the present invention to be described and unrestricted, other multiplied material, include but not limited to Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb, HgCdTe etc. than as mentioned above, and absorbed layer adopts material to be that Ge, GeSn, InGaAs, GaAs, InAs can provide similar structure and technology of preparing completely according to the spirit of the embodiment of the present invention.Although with reference to example to invention has been detailed description, those of ordinary skill in the art should understand and can modify to technical scheme of the present invention or equivalent replacement.But only otherwise depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (10)
1. a low noise avalanche photodetector, it is characterized in that: comprise the N-type ohmic contact layer/P type ohmic contact layer, dynode layer, charge layer, the P type ohmic contact layer/N-type ohmic contact layer that are formed different doping type by diffusion, ion implantation successively, and the bottom between charge layer and P type ohmic contact layer/N-type ohmic contact layer is formed with substrate; Described charge layer, P type ohmic contact layer/form an inverted trapezoidal groove between N-type ohmic contact layer and substrate; Absorbed layer is formed in described inverted trapezoidal groove.
2. low noise avalanche photodetector as claimed in claim 1, is characterized in that: described dynode layer adopts material to be Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb or HgCdTe; Described absorbed layer adopts material to be Ge, GeSn, InGaAs, GaAs, InAs; Described substrate is Si or InP.
3. low noise avalanche photodetector as claimed in claim 1 or 2, is characterized in that: described P type ohmic contact layer and N-type ohmic contact layer are manufactured with P-type electrode and N-type electrode respectively.
4. a preparation method for avalanche photodetector as claimed in claim 1, is characterized in that, comprising:
S1. different region of doped material is made: form the N-type ohmic contact layer of different doping type/P type ohmic contact layer, dynode layer, charge layer, P type ohmic contact layer/N-type ohmic contact layer successively by the technique of diffusion, ion implantation, and the bottom between charge layer and P type ohmic contact layer/N-type ohmic contact layer is formed with substrate;
S2. by etching region of doped material, at charge layer, P type ohmic contact layer/form an inverted trapezoidal groove between N-type ohmic contact layer and substrate;
S3. on the inverted trapezoidal groove of etching, absorbed layer is prepared;
S4. P-type electrode and N-type electrode are produced on SiP type and N-type ohmic contact layer.
5. the preparation method of avalanche photodetector as claimed in claim 4, is characterized in that: described region of doped material is doping Si material area or doping InP material area.
6. the preparation method of avalanche photodetector as claimed in claim 5, is characterized in that: described dynode layer is Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb or HgCdTe; Described absorbed layer adopts material to be Ge, GeSn, InGaAs, GaAs, InAs.
7. the preparation method of avalanche photodetector as claimed in claim 6, is characterized in that: before Ge absorbed layer is formed, prepared SiGe transition zone.
8. the preparation method of avalanche photodetector as claimed in claim 6, is characterized in that: at the interface of InGaAs absorbed layer and N-type ohmic contact layer, prepared InGaAsP transition zone.
9. the preparation method of avalanche photodetector as claimed in claim 4, is characterized in that: adopt waveguiding structure and photonic crystal, plasma to improve quantum efficiency.
10. the preparation method of avalanche photodetector as claimed in claim 4, is characterized in that: obtained avalanche photodetector is formed one dimension or two-dimensional array.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3387680A4 (en) * | 2016-09-20 | 2019-10-09 | Limited Liability Company "Dephan" (LLC "Dephan") | Avalanche photodetectors |
| JP2019212820A (en) * | 2018-06-06 | 2019-12-12 | 富士通株式会社 | Optical semiconductor element and optical transmission device |
| JP2020053444A (en) * | 2018-09-25 | 2020-04-02 | 沖電気工業株式会社 | Semiconductor light-receiving element and photoelectric fusion module |
| WO2020103396A1 (en) * | 2018-11-19 | 2020-05-28 | 上海新微技术研发中心有限公司 | Waveguide-type photoelectric detector and manufacturing method therefor |
| JP2020170819A (en) * | 2019-04-05 | 2020-10-15 | 富士通株式会社 | Optical semiconductor element and optical transmission device |
| CN111933742A (en) * | 2020-07-30 | 2020-11-13 | 武汉光谷信息光电子创新中心有限公司 | Avalanche photodetector and preparation method thereof |
| CN111952399A (en) * | 2020-08-20 | 2020-11-17 | 中国科学院半导体研究所 | Waveguide coupled photoelectric detector and preparation method thereof |
| CN112289883A (en) * | 2020-10-30 | 2021-01-29 | 华中科技大学 | Three-dimensional semiconductor avalanche photoelectric detection chip and preparation method thereof |
| CN112951942A (en) * | 2021-04-23 | 2021-06-11 | 湖南汇思光电科技有限公司 | Method for manufacturing germanium avalanche photodetector based on gallium arsenide substrate |
| CN113574681A (en) * | 2019-03-12 | 2021-10-29 | 蒂凡有限责任公司 | Avalanche photodetector (variants) and method for its manufacture (variants) |
| CN113838940A (en) * | 2021-08-19 | 2021-12-24 | 北京无线电测量研究所 | Integrated photoelectric detector and manufacturing method thereof |
| US20220013680A1 (en) * | 2020-07-13 | 2022-01-13 | Imec Vzw | Avalanche Photodiode Device with a Curved Absorption Region |
| WO2023125283A1 (en) * | 2021-12-29 | 2023-07-06 | 武汉光谷信息光电子创新中心有限公司 | Avalanche photodetector and preparation method therefor |
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