CN107749424B - Avalanche photodiode and preparation method thereof - Google Patents
Avalanche photodiode and preparation method thereof Download PDFInfo
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- CN107749424B CN107749424B CN201711000376.2A CN201711000376A CN107749424B CN 107749424 B CN107749424 B CN 107749424B CN 201711000376 A CN201711000376 A CN 201711000376A CN 107749424 B CN107749424 B CN 107749424B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 69
- 238000010521 absorption reaction Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims description 73
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000004857 zone melting Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 abstract description 7
- 238000000407 epitaxy Methods 0.000 abstract description 6
- 238000005036 potential barrier Methods 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The invention discloses an avalanche photodiode and a preparation method thereof, wherein the avalanche photodiode comprises an N-type heavily doped layer, a multiplication layer monocrystalline substrate, a metal bonding layer, an absorption layer InGaAs monocrystalline substrate and a P-type heavily doped InGaAs layer which are sequentially arranged from top to bottom, the multiplication layer monocrystalline substrate and the absorption layer InGaAs monocrystalline substrate are bonded together through the metal bonding layer without epitaxy, the structure of the avalanche photodiode is simplified, the production time is greatly shortened, the production cost is greatly reduced, meanwhile, the metal bonding layer can effectively improve the uniform distribution of charges, reduce the potential barrier of electrons entering the multiplication layer, and improve the performance of devices; the preparation method has wide application range, can be suitable for preparing avalanche photodiodes in various wave bands, has simple procedures and can effectively reduce the investment of production equipment.
Description
Technical Field
The invention relates to the technical field of semiconductor optical devices, in particular to an avalanche photodiode and a preparation method thereof.
Background
With the development and progress of society and technology, artificial intelligence and smart home have become mainstream trends of social development. These technologies have not been developed for advanced and varied sensors. Photodetectors, as one of the sensors to be the key unit, have received extensive attention from researchers.
Avalanche diode photodetectors (APDs) have the advantages of high internal gain, high quantum efficiency, high sensitivity and the like, and are one of the current mainstream photodetectors. However, most of the multiplication layers in the APD at present are obtained by an epitaxial method, and the crystal quality of the multiplication layers needs to be further improved (usually the half-width of X-ray Rocking Curve is greater than 150arcsec and is far greater than 50arcsec prepared by a pulling method) so as to achieve a more ideal multiplication effect. To improve the device performance of APDs, an InP charge control layer and an InGaAsP transition layer are often interposed between the absorber layers InGaAs and InP. In addition, to obtain a better quality absorption layer of InGaAs, a thicker InP buffer layer needs to be grown on the InP substrate.
Therefore, in order to obtain a high quality APD, simplifying the structure of the APD and improving the quality of the absorption layer InGaAs and multiplication layers has become an effort for researchers.
Disclosure of Invention
In order to solve the problems, the invention aims to provide an avalanche photodiode with simple structure and excellent performance and a preparation method thereof.
The invention solves the problems by adopting the following technical scheme:
an avalanche photodiode, comprising:
the N-type heavily doped layer, the multiplication layer single crystal substrate, the metal bonding layer, the absorption layer InGaAs single crystal substrate and the P-type heavily doped InGaAs layer are sequentially arranged from top to bottom. According to the avalanche photodiode, the multiplication layer single crystal substrate and the absorption layer InGaAs single crystal substrate are bonded together through the metal bonding layer, epitaxy is not needed, the structure of the avalanche photodiode is simplified, the production time is greatly shortened, the production cost is greatly reduced, meanwhile, the even distribution of charges can be effectively improved through the metal bonding layer, the potential barrier of electrons entering the multiplication layer is reduced, and the performance of a device is improved.
Further, the multiplication layer single crystal substrate and the absorption layer InGaAs single crystal substrate are both prepared by a pull-up method or a zone-melting method. The multiplication layer single crystal substrate and the absorption layer InGaAs single crystal substrate can be prepared by a pulling method or a zone melting method, so that the acting length of the multiplication layer single crystal substrate and the absorption layer InGaAs single crystal substrate can be effectively increased, and the performance of the device is improved.
Further, the material of the multiplication layer single crystal substrate is Si, inP or InAlAs.
Further, the N-type heavily doped layer is formed by ion implantation doping of the multiplication layer single crystal substrate.
Further, the P-type heavily doped InGaAs layer is formed by ion implantation doping of the absorption layer InGaAs single crystal substrate.
Further, the material of the metal bonding layer is AuZn or AuSn alloy. The metal bonding layer can effectively improve the uniform distribution of charges and reduce the potential barrier for electrons to enter the multiplication layer.
Further, the semiconductor device further comprises an N-type electrode which is evaporated on the N-type heavily doped layer and a P-type electrode which is evaporated on the P-type heavily doped InGaAs layer.
A method of making an avalanche photodiode comprising the steps of:
(a) Preparing a multiplication layer single crystal substrate and an absorption layer InGaAs single crystal substrate by a pulling method or a zone melting method;
(b) Cleaning the multiplication layer monocrystalline substrate and the absorption layer InGaAs monocrystalline substrate by adopting a standard cleaning process, removing dirt particles and surface organic matters on the surfaces of the substrates, and spin-drying by using a spin dryer;
(c) Uniformly implanting ions on the back surface of the multiplication layer single crystal substrate, namely the surface not used for bonding, by adopting an ion implanter to obtain an N-type heavily doped layer;
(d) Uniformly implanting ions into the back surface of the absorption layer InGaAs single crystal substrate, namely the surface not used for bonding, by adopting an ion implanter to obtain a P-type heavily doped InGaAs layer;
(e) C, bonding the multiplication layer single crystal substrate containing the N-type heavily doped layer prepared in the step c and the absorption layer InGaAs single crystal substrate containing the P-type heavily doped InGaAs layer prepared in the step d together by adopting a metal bonding machine;
(f) Evaporating a P-type electrode and an N-type electrode on the P-type heavily doped InGaAs layer and the N-type heavily doped layer respectively;
(g) And (5) splitting and packaging.
The preparation method of the avalanche photodiode has wide application range, can be suitable for preparing avalanche photodiodes of various wave bands, has simple working procedures, does not need epitaxy, greatly shortens the production time while reducing the equipment investment, and is expected to greatly reduce the production cost.
Further, the material of the multiplication layer single crystal substrate is Si, inP or InAlAs.
And e, bonding is carried out by selecting AuZn or AuSn alloy materials to form a metal bonding layer. The metal bonding layer can effectively improve the uniform distribution of charges and reduce the potential barrier for electrons to enter the multiplication layer.
The beneficial effects of the invention are as follows: according to the avalanche photodiode and the preparation method thereof, the multiplication layer single crystal substrate and the absorption layer InGaAs single crystal substrate are bonded together through the metal bonding layer, epitaxy is not needed, the structure of the avalanche photodiode is simplified, the production time is greatly shortened, the production cost is greatly reduced, meanwhile, the metal bonding layer can effectively improve the uniform distribution of charges, reduce the potential barrier of electrons entering the multiplication layer, and improve the performance of a device; the preparation method has wide application range, can be suitable for preparing avalanche photodiodes in various wave bands, has simple procedures and can effectively reduce the investment of production equipment.
Drawings
The invention is further described below with reference to the drawings and examples.
FIG. 1 is a schematic cross-sectional view of an avalanche photodiode of the present invention;
fig. 2 is a flow chart of a method of manufacturing an avalanche photodiode in accordance with the present invention.
Detailed Description
Referring to fig. 1, an avalanche photodiode of the present invention includes:
an N-type heavily doped layer 15, a multiplication layer single crystal substrate 14, a metal bonding layer 13, an absorption layer InGaAs single crystal substrate 12 and a P-type heavily doped InGaAs layer 11 are sequentially arranged from bottom to top. The avalanche photodiode bonds the multiplication layer monocrystalline substrate 14 and the absorption layer InGaAs monocrystalline substrate 12 together through the metal bonding layer 13, epitaxy is not needed, the structure of the avalanche photodiode is simplified, the production time is greatly shortened, the production cost is greatly reduced, meanwhile, the metal bonding layer 13 can effectively improve the uniform distribution of charges, reduce the potential barrier of electrons entering the multiplication layer, and improve the performance of devices.
Further, the multiplication layer single crystal substrate 14 and the absorption layer InGaAs single crystal substrate 12 are both prepared by a pulling method or a zone-melting method. The multiplication layer single crystal substrate 14 and the absorption layer InGaAs single crystal substrate 12 can be prepared by a pulling method or a zone melting method, so that the acting length of the multiplication layer single crystal substrate and the absorption layer InGaAs single crystal substrate can be effectively increased, and the performance of the device can be improved.
Further, the material of the multiplication layer single crystal substrate 14 is Si, inP, or inaias.
Further, the N-type heavily doped layer 15 is formed by ion implantation doping the multiplication layer single crystal substrate 14.
Further, the P-type heavily doped InGaAs layer 11 is formed by ion implantation doping of the absorption layer InGaAs single crystal substrate 12.
Further, the material of the metal bonding layer 13 is AuZn or AuSn alloy. The metal bonding layer 13 can effectively improve the uniform distribution of charges and reduce the barrier for electrons to enter the multiplication layer.
Further, the semiconductor device further comprises an N-type electrode 16 which is evaporated on the N-type heavily doped layer 15 and a P-type electrode 17 which is evaporated on the P-type heavily doped InGaAs layer 11.
Referring to fig. 2, a method for fabricating an avalanche photodiode of the present invention includes the steps of:
(a) Preparing a multiplication layer single crystal substrate 14 and an absorption layer InGaAs single crystal substrate 12 by a pulling method or a zone melting method;
(b) Cleaning the multiplication layer monocrystalline substrate 14 and the absorption layer InGaAs monocrystalline substrate 12 by adopting a standard cleaning process, removing dirt particles and surface organic matters on the surfaces of the substrates, and spin-drying by using a spin dryer;
(c) Uniformly implanting ions into the back surface of the multiplication layer single crystal substrate 14, namely the surface not used for bonding, by adopting an ion implanter to obtain an N-type heavily doped layer 15;
(d) Uniformly implanting ions into the back surface of the absorption layer InGaAs single crystal substrate 12, namely the surface not used for bonding, by adopting an ion implanter to obtain a P-type heavily doped InGaAs layer 11;
(e) Bonding the multiplication layer single crystal substrate 14 containing the N-type heavily doped layer 15 prepared in the step c and the absorption layer InGaAs single crystal substrate 12 containing the P-type heavily doped InGaAs layer 11 prepared in the step d together by adopting a metal bonding machine;
(f) Evaporating a P-type electrode 17 and an N-type electrode 16 on the P-type heavily doped InGaAs layer 11 and the N-type heavily doped layer 15 respectively;
(g) And (5) splitting and packaging.
The preparation method of the avalanche photodiode has wide application range, can be suitable for preparing avalanche photodiodes of various wave bands, has simple working procedures, does not need epitaxy, greatly shortens the production time while reducing the equipment investment, and is expected to greatly reduce the production cost.
Further, the material of the multiplication layer single crystal substrate 14 is Si, inP, or inaias.
Further, in step e, auZn or AuSn alloy material is selected for bonding to form a metal bonding layer 13. The metal bonding layer 13 can effectively improve the uniform distribution of charges and reduce the barrier for electrons to enter the multiplication layer.
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Example 1
The preparation method of the avalanche photodiode of the embodiment comprises the following steps:
(a) Preparing a multiplication layer Si single crystal substrate 14 and an absorption layer InGaAs single crystal substrate 12 by a Czochralski method or a zone-melting method;
(b) Cleaning the multiplication layer Si single crystal substrate 14 and the absorption layer InGaAs single crystal substrate 12 by adopting a standard cleaning process, removing dirt particles and surface organic matters on the surfaces of the substrates, and spin-drying by using a spin dryer;
(c) Uniformly implanting ions on the back surface of the multiplication layer Si single crystal substrate 14, namely the surface not used for bonding by adopting an ion implanter to obtain an N-type heavily doped layer 15;
(d) Uniformly implanting ions into the back surface of the absorption layer InGaAs single crystal substrate 12, namely the surface not used for bonding, by adopting an ion implanter to obtain a P-type heavily doped InGaAs layer 11;
(e) Bonding the multiplication layer Si single crystal substrate 14 containing the N-type heavily doped layer 15 prepared in the step c and the absorption layer InGaAs single crystal substrate 12 containing the P-type heavily doped InGaAs layer 11 prepared in the step d together by adopting a metal bonding machine;
(f) Evaporating a P-type electrode 17 and an N-type electrode 16 on the P-type heavily doped InGaAs layer 11 and the N-type heavily doped layer 15 respectively;
(g) And performing splitting and packaging to obtain the visible light APD.
As shown in fig. 1, the visible light APD prepared in this embodiment includes an N-type heavily doped layer 15, a multiplication layer Si single crystal substrate 14, a metal bonding layer 13, an absorption layer InGaAs single crystal substrate 12, and a P-type heavily doped InGaAs layer 11, which are sequentially arranged from bottom to top. In addition, the method also comprises the step of evaporating a P-type electrode 17 and an N-type electrode 16 on the P-type heavily doped InGaAs layer 11 and the N-type heavily doped layer 15 respectively. The avalanche photodiode prepared had a dark current of 0.25nA at the avalanche voltage.
Example 2
The preparation method of the avalanche photodiode of the embodiment comprises the following steps:
(a) Preparing a multiplication layer InP single crystal substrate 14 and an absorption layer InGaAs single crystal substrate 12 by a pulling method or a zone-melting method;
(b) Cleaning the InP single crystal substrate 14 with the multiplication layer and the InGaAs single crystal substrate 12 with a standard cleaning process, removing dirt particles and surface organic matters on the surfaces of the substrates, and spin-drying by using a spin dryer;
(c) Uniformly implanting ions into the back surface of the multiplication layer InP single crystal substrate 14, namely the surface not used for bonding, by adopting an ion implanter to obtain an N-type heavily doped layer 15;
(d) Uniformly implanting ions into the back surface of the absorption layer InGaAs single crystal substrate 12, namely the surface not used for bonding, by adopting an ion implanter to obtain a P-type heavily doped InGaAs layer 11;
(e) Bonding the multiplication layer InP single crystal substrate 14 containing the N-type heavily doped layer 15 prepared in the step c and the absorption layer InGaAs single crystal substrate 12 containing the P-type heavily doped InGaAs layer 11 prepared in the step d together by adopting a metal bonding machine;
(f) Evaporating a P-type electrode 17 and an N-type electrode 16 on the P-type heavily doped InGaAs layer 11 and the N-type heavily doped layer 15 respectively;
(g) And performing splitting and packaging to obtain the infrared light APD.
The APD performance of the novel structure prepared in this embodiment is similar to that of embodiment 1, and will not be described in detail here.
The present invention is not limited to the above embodiments, but is merely preferred embodiments of the present invention, and the present invention should be construed as being limited to the above embodiments as long as the technical effects of the present invention are achieved by the same means.
Claims (3)
1. A method of making an avalanche photodiode comprising the steps of:
(a) Preparing a multiplication layer single crystal substrate (14) and an absorption layer InGaAs single crystal substrate (12) by a pulling method or a zone melting method;
(b) Cleaning the multiplication layer single crystal substrate (14) and the absorption layer InGaAs single crystal substrate (12) by adopting a standard cleaning process, removing dirt particles and surface organic matters on the surfaces of the substrates, and spin-drying by using a spin dryer;
(c) Uniformly implanting ions on the back surface of the multiplication layer single crystal substrate (14), namely the surface not used for bonding, by adopting an ion implanter to obtain an N-type heavily doped layer (15);
(d) Uniformly implanting ions into the back surface of the absorption layer InGaAs single crystal substrate (12), namely the surface not used for bonding, by adopting an ion implanter to obtain a P-type heavily doped InGaAs layer (11);
(e) Bonding the multiplication layer single crystal substrate (14) containing the N-type heavily doped layer (15) prepared in the step (c) and the absorption layer InGaAs single crystal substrate (12) containing the P-type heavily doped InGaAs layer (11) prepared in the step (d) together by adopting a metal bonding machine;
(f) Evaporating a P-type electrode (17) and an N-type electrode (16) on the P-type heavily doped InGaAs layer (11) and the N-type heavily doped layer (15) respectively;
(g) Splitting and packaging;
wherein:
the material of the multiplication layer single crystal substrate (14) is Si, inP or InAlAs;
and (e) bonding is carried out by selecting AuZn or AuSn alloy material to form a metal bonding layer (13).
2. An avalanche photodiode prepared by the preparation method of claim 1, comprising:
an N-type heavily doped layer (15), a multiplication layer monocrystalline substrate (14), a metal bonding layer (13), an absorption layer InGaAs monocrystalline substrate (12) and a P-type heavily doped InGaAs layer (11) which are sequentially arranged from top to bottom; the multiplication layer single crystal substrate (14) and the absorption layer InGaAs single crystal substrate (12) are prepared by a pulling method or a zone melting method; the material of the multiplication layer single crystal substrate (14) is Si, inP or InAlAs; the N-type heavily doped layer (15) is formed by ion implantation doping of the multiplication layer single crystal substrate (14); the P-type heavily doped InGaAs layer (11) is formed by ion implantation doping of an absorption layer InGaAs single crystal substrate (12); the material of the metal bonding layer (13) is AuZn or AuSn alloy
3. An avalanche photodiode according to claim 2 wherein:
the semiconductor device further comprises an N-type electrode (16) which is evaporated on the N-type heavily doped layer (15), and a P-type electrode (17) which is evaporated on the P-type heavily doped InGaAs layer (11).
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| CN108630781B (en) * | 2018-04-28 | 2020-10-20 | 中国科学院半导体研究所 | 3-5 mu m infrared band avalanche photodiode detector and manufacturing method thereof |
| CN108899380B (en) * | 2018-06-08 | 2020-05-12 | 清华大学 | Infrared semiconductor avalanche detector and preparation method thereof |
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| US4857982A (en) * | 1988-01-06 | 1989-08-15 | University Of Southern California | Avalanche photodiode with floating guard ring |
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