CN102157599A - Energy band transmutation multiplication region structure for avalanche photodiode, and preparation method of energy band transmutation multiplication structure - Google Patents
Energy band transmutation multiplication region structure for avalanche photodiode, and preparation method of energy band transmutation multiplication structure Download PDFInfo
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Abstract
The invention relates to an energy band transmutation multiplication region structure for an avalanche photodiode, and a preparation method of the energy band transmutation multiplication structure. The invention is characterized in that: an n-layer material of which the energy band gradient is transmuted is used as the multiplication region structure, n is a natural number, and x is more than or equal to 2 and less than or equal to 10. The preparation method comprises a step of: growing the n-layer material of which the energy band gradient is transmuted as a multiplication region structure after growing a buffer layer, an absorption layer, a digital transmutation superlattice transitional layer and a charge layer. By the energy band transmutation multiplication region structure, the ionization rate difference between electrons and cavities can be increased substantially, and external very high bias voltage is not needed; therefore, the over-residual noises of the device can be reduced effectively.
Description
Technical field
The invention belongs to avalanche photodide and preparation field thereof, particularly a kind of be used for avalanche photodide can be with alternation multiplication region structure and preparation method thereof.
Background technology
(Avalanche Photodiode APD) has higher sensitivity and detectivity because of having multiplier effect than PN detector to avalanche photodide, is specially adapted to the detection of faint optical signal, has obtained increasing attention and application.The seventies APD occurs since last century, and the structure of APD has experienced an evolution of updating.Early stage APD structure still adopts the PIN structure, just work under the higher reverse voltage, but higher operating voltage makes device have very big superfluous noise.In order to reduce device noise, the researcher has designed the structure of separate absorbent district and gain region, outside the uptake zone, increase a multiplication region formation uptake zone and separate (Separated Absorption andMultiplication with multiplication region with relative more broad stopband, SAM) structure, the introducing of broad stopband multiplication region can reduce device dark electric current and noise, and uptake zone and multiplication region structure can be optimized relatively independently.People also introduce transition zone to reduce the being with spike effect between narrow band gap uptake zone and broad-band gap multiplication region, constitute the uptake zone and separate, have transition zone (Separated AbsorptionGrading and Multiplication with multiplication region, SAGM) structure, further reduce the noise of device, improved the response speed of device.Again by introducing charged region, constitute so-called uptake zone charged region and separate, have transition zone (SeparatedAbsorptionGrading Charge and Multiplication with multiplication region, SAGCM) structure can modulated electric fields and modulate the charge carrier ionization process.
Superfluous noise is very important device parameters in the APD actual application, it is the noise that the device inside multiplicative process produces, because the multiplication of each photo-generated carrier gain is different, so the electric current after the multiplication has the characteristic of random fluctuation, the additional noise that this fluctuating is introduced is exactly that surplus is made an uproar.Therefore, the optimization of multiplication region structure and material system plays important effect to the superfluous noise of device.If multiplication region is that individual layer is than thick material (body material), the size of superfluous noise is mainly by the ratio decision of multiplication region material to the ionization rate in electronics and hole, if this ratio big or more little more (be material the ionization rate in electronics and hole is differed big more), then the superfluous noise of device is more little.The body material is the characteristic of material itself to the ratio of the ionization rate in electronics and hole, and the optimizable leeway of multiplication region material is very narrow like this.In order to reduce the superfluous noise of device, the researcher has proposed to have introduced superlattice and quantum well structure at multiplication region, come from improving electronics and hole ionization rate variance the multiplication region in essence by modulation heterojunction conduction band band rank and the distribution of valence band band rank, thereby improve multiplication factor and reduce superfluous noise, also reduce the superfluous noise of device by reducing the multiplication region material thickness.At present, process is to the introducing of quantum structure in the multiplication region and the optimization of energy band engineering, and people have obtained remarkable progress for the effort that reduces the superfluous noise of APD.Yet, superlattice and quantum well structure replace because being potential barrier and potential well layer, if to realize suppressing electronics or hole wherein a kind of charge carrier ionization and do not limit the ionization of another kind of charge carrier substantially, need add very high bias voltage, this can cause the increase of superfluous noise again, present superfluous noise parameter still has big gap apart from the requirement of practicality, particularly for applications such as satellite remote sensing, three-dimensional imaging, high resolution spectral measuring, single photon detection, higher for the requirement of the superfluous noise of device.
Summary of the invention
Technical problem to be solved by this invention provide a kind of be used for avalanche photodide can be with alternation multiplication region structure and preparation method thereof, the present invention can be from improving electronics and hole ionization rate variance in essence, need not to add very high bias voltage, thereby help reducing the superfluous noise of device.
Of the present invention a kind of be used for avalanche photodide can be with alternation multiplication region structure, it is characterized in that: the n layer material of adopts band gradient alternation is as the multiplication region structure, wherein n is a natural number, 2≤x≤10, the multiplication region structural material is in multiplication region one side material energy gap maximum, reduce gradually toward opposite side direction layers of material energy gap, in opposite side material energy gap minimum.
Described multiplication region structure layers of material lattice match can effectively be avoided misfit dislocation.
To comprise In
0.52Al
xGa
0.48-xAs can be with the In of alternation multiplication region
0.53Ga
0.47As avalanche photodide epitaxial material is an example, and described multiplication region structure adopts the In of four layers of different component
0.52Al
xGa
0.48-xThe As material constitutes can be with the gradient tapered structure, 0.24≤x≤0.48 wherein, and every layer thickness is 50nm.
A kind of comprising of avalanche photodide that be used for of the present invention with the preparation method of alternation multiplication region structure:
(1) before formal growth, determines electron gun furnace temperature, the underlayer temperature of the material of growth lattice match on the InP substrate by preparing growth earlier;
(2) adopt the growth of molecular beam epitaxy or gas phase epitaxy of metal organic compound method, behind grown buffer layer, absorbed layer, digital alternation superlattice transition zone and charge layer, growth can be with the n layer material of gradient alternation as the multiplication region structure, and wherein n is a natural number, 2≤x≤10;
(3) contact layer is gone up in growth at last, and obtaining the multiplication region structure is can be with the avalanche photodide of alternation.
To comprise In
0.52Al
xGa
0.48-xAs can be with the In of alternation multiplication region
0.53Ga
0.47As avalanche photodide epitaxial material is an example, and its concrete steps are as follows:
(1) before formal growth, determines the In of growth lattice match on the InP substrate by preparing growth earlier
0.52Al
0.48As, In
0.53Ga
0.47As and In
0.52Al
xGa
0.48-xElectron gun furnace temperature during As, underlayer temperature, wherein 0.24≤x≤0.48;
(2) behind grown buffer layer, absorbed layer, digital alternation superlattice transition zone and charge layer, the growth gross thickness is that undoping of 200nm can be with alternation multiplication region structure, and the material that is 50nm with four layer thicknesses is formed, and is followed successively by In
0.52Al
0.24Ga
0.24As, In
0.52Al
0.32Ga
0.16As, In
0.52Al
0.40Ga
0.08As and In
0.52Al
0.48As.
(3) growth thickness is the last contact layer of InP of the highly doped Be of 0.6 μ m at last.
In the described step (3) to carry out highly doped parameter with Be be p＞2 * 10
18Cm
-3
What the present invention had determined the APD multiplication region can be with tapered structure, mainly comprises:
(1) multiplication region structure Design
By in multiplication region, having introduced the superfluous noise that superlattice and quantum well structure can reduce device, utilize conduction band band rank or valence band band rank to be suppressed at the electronics under the reverse biased or the ionization in hole.Yet, because being potential barrier and potential well layer, superlattice and quantum well structure replace, if to realize suppressing electronics or hole wherein a kind of charge carrier ionization and do not limit the ionization of another kind of charge carrier substantially, need add very high bias voltage, this can cause the increase of superfluous noise.Thought of the present invention is the multilayer material of adopts band gradient alternation in multiplication region, material is in multiplication region one side material energy gap maximum, reduce gradually toward opposite side direction layers of material energy gap, in opposite side material energy gap minimum, forming natural alternation can be with, only the ionization to a kind of charge carrier produces restriction, and the size of bias voltage is not required.With electron multiplication type APD is example, add the material energy gap maximum of back bias voltage electrode one side, reduce gradually toward adding positive bias electrode direction layers of material energy gap, near adding the material energy gap minimum of positive bias one side, thereby conduction band band rank can not produce restriction and the ionization in hole has been limited to the multistage restriction equivalence of the mobile generation in hole in valence band band rank to movement of electrons.
(2) the multiplication region material system chooses
Mainly need to consider three aspects when choosing the multiplication region material system, at first the material band structure will satisfy and above-mentionedly can be with the gradient tapered structure; Secondly selected multiplication region material system preferably will satisfy the layers of material lattice match, thereby can effectively reduce misfit dislocation; Selected once more material system will be beneficial to growth, convenient control.For example, for the InP base In that has broad prospect of application in fields such as short-wave infrared optical fiber communication, remotely sensed images
0.53Ga
0.47AsAPD can choose the In with different al component x
0.53(Al
xGa
1-x) As ternary or quaternary material system be as the multiplication region material, can on the basis that keeps the material lattice coupling, constitute and to be with the gradient tapered structure, material system has ripe material growth technique simultaneously, is fit to adopt molecular beam epitaxy or the growth of gas phase epitaxy of metal organic compound method.
Beneficial effect
The present invention can need not to add very high bias voltage from improving electronics and hole ionization rate variance in essence, thereby helps reducing the superfluous noise of device.
Description of drawings
Fig. 1 for provided by the invention be used for avalanche photodide can be with alternation multiplication region band structure schematic diagram;
Fig. 2 is for being used for In
0.53Ga
0.47The In of As avalanche photodide
0.52Al
xGa
0.48-xAs can be with alternation multiplication region band structure schematic diagram;
Fig. 3 is a kind of In that comprises
0.53(Al
xGa
1-x) As can be with the In of alternation multiplication region
0.53Ga
0.47As avalanche photodide material structure figure.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment 1
(1) needs growth In
0.53Ga
0.47As avalanche photodide epitaxial material, adopt the uptake zone charged region to separate, have transition zone (SAGCM) structure with multiplication region, with semi-insulating or conduction InP monocrystal material as substrate of detector, the InP material carries out highly doped (contact layer under the while conduct, n＞2 * 10 as resilient coating and with Si
18Cm
-3), In
0.53Ga
0.47The As material carries out low-doped Si or (n～2 * 10 that undope as absorbed layer
16Cm
-3), the In of more low-doped Si
0.52Al
0.48As is as charge layer (n～2 * 10
17Cm
-3), In undopes
0.53Ga
0.47As/In
0.52Al
0.48The As superlattice are as absorbed layer and charge layer middle transitional layer, and multiplication region adopts the In of plain four layers of different component
0.52Al
xGa
0.48-xThe As material constitutes can be with the gradient tapered structure, and the band structure schematic diagram is as shown in Figure 2 in the multiplication region under the applying bias;
(2) conventional molecular beam epitaxial method is adopted in epitaxial growth, determines InP, the In of growth lattice match on the InP substrate before formal growth earlier by the preparation growth
0.52Al
0.48As, In
0.53Ga
0.47As and In
0.52Al
xGa
0.48-xGrowth conditionss such as the electron gun furnace temperature during As, underlayer temperature are with 490 ℃ of underlayer temperatures, the growth In of grown InP
0.52Al
0.48As, In
0.53Ga
0.47As and In
0.52Al
xGa
0.48-xUnderlayer temperature is an example for 530 ℃ during As;
(3) epitaxial material structure figure as shown in Figure 3.Epi-Ready InP substrate is being carried out the n type InP resilient coating of oxide desorption processing back elder generation with the highly doped Si of 490 ℃ of about 1 μ m of growth thickness of underlayer temperature, n＞2 * 10
18Cm
-3
(4) then with the low-doped or plain n type In of the about 1 μ m of 530 ℃ of growth thickness of underlayer temperature
0.53Ga
0.47The As absorbed layer, n is about 2 * 10
16Cm
-3
(5) again with low-doped Si or the plain n type In of the about 100nm of 530 ℃ of underlayer temperatures growth gross thickness
0.53Ga
0.47As/In
0.52Al
0.48As thickness numeral alternation superlattice transition zone, each periodic thickness 10nm, interim weekly In
0.53Ga
0.47As and In
0.52Al
0.48The ratio of As bed thickness was followed successively by 9: 1,8: 2 ... 2: 8,1: 9, n was about 2 * 10
16Cm
-3
(6) then with the In of the more low-doped Si of 530 ℃ of underlayer temperatures growth 50nm
0.52Al
0.48The As charge layer, n is about 2 * 10
17Cm
-3:
(7) subsequent is that undoping of 200nm can be with alternation multiplication region structure with 530 ℃ of growths of underlayer temperature gross thickness, and the material that is 50nm with four layer thicknesses is formed, and is followed successively by In
0.52Al
0.24Ga
0.24As, In
0.52Al
0.32Ga
0.16As, In
0.52Al
0.40Ga
0.08As and In
0.52Al
0.48As;
(8) last InP with the highly doped Be of the about 0.6 μ m of 530 ℃ of growth thickness of underlayer temperature goes up contact layer, p＞2 * 10
18Cm
-3
(9) finish growth, under protective atmosphere, lower the temperature, take out epitaxial material and carry out necessary test and device technology making.
Claims (6)
- One kind be used for avalanche photodide can be with alternation multiplication region structure, it is characterized in that: the n layer material of adopts band gradient alternation is as the multiplication region structure, wherein n is a natural number, 2≤x≤10, the multiplication region structural material is in multiplication region one side material energy gap maximum, reduce gradually toward opposite side direction layers of material energy gap, in opposite side material energy gap minimum.
- 2. according to claim 1 a kind of be used for avalanche photodide can be with alternation multiplication region structure, it is characterized in that: described multiplication region structure layers of material lattice match.
- 3. according to claim 1 a kind of be used for avalanche photodide can be with alternation multiplication region structure, it is characterized in that: to comprise In 0.52Al xGa 0.48-xAs can be with the In of alternation multiplication region 0.53Ga 0.47As avalanche photodide epitaxial material is an example, and described multiplication region structure adopts the In of four layers of different component 0.52Al xGa 0.48-xThe As material constitutes can be with the gradient tapered structure, 0.24≤x≤0.48 wherein, and the thickness of every layer material is 50nm.
- 4. one kind is used for comprising with the preparation method of alternation multiplication region structure of avalanche photodide:(1) before formal growth, determines electron gun furnace temperature, the underlayer temperature of the material of growth lattice match on the InP substrate by preparing growth earlier;(2) adopt the growth of molecular beam epitaxy or gas phase epitaxy of metal organic compound method, behind grown buffer layer, absorbed layer, digital alternation superlattice transition zone and charge layer, growth can be with the n layer material of gradient alternation as the multiplication region structure, and wherein n is a natural number, 2≤x≤10;(3) contact layer is gone up in growth at last, and obtaining the multiplication region structure is can be with the avalanche photodide of alternation.
- 5. a kind of it is characterized in that of avalanche photodide that be used for according to claim 4: to comprise In with the preparation method of alternation multiplication region structure 0.52Al xGa 0.48-xAs can be with the In of alternation multiplication region 0.53Ga 0.47As avalanche photodide epitaxial material is an example, and its concrete steps are as follows:(1) before formal growth, determines the In of growth lattice match on the InP substrate by preparing growth earlier 0.52Al 0.48As, In 0.53Ga 0.47As and In 0.52Al xGa 0.48-xElectron gun furnace temperature during As, underlayer temperature, wherein 0.24≤x≤0.48;(2) behind grown buffer layer, absorbed layer, digital alternation superlattice transition zone and charge layer, the growth gross thickness is that undoping of 200nm can be with alternation multiplication region structure, and the material that is 50nm with four layer thicknesses is formed, and is followed successively by In 0.52Al 0.24Ga 0.24As, In 0.52Al 0.32Ga 0.16As, In 0.52Al 0.40Ga 0.08As and In 0.52Al 0.48As.(3) growth thickness is the last contact layer of InP of the highly doped Be of 0.6 μ m at last.
- 6. a kind of it is characterized in that of avalanche photodide that be used for according to claim 5 with the preparation method of alternation multiplication region structure: in the described step (3) to carry out highly doped parameter with Be be p＞2 * 10 18Em -3
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| CN104505422A (en) * | 2014-10-30 | 2015-04-08 | 北京工业大学 | Self-extinguishing and self-recovering avalanche photodiode |
| CN104538484A (en) * | 2014-12-04 | 2015-04-22 | 中国科学院上海微系统与信息技术研究所 | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4701773A (en) * | 1982-11-08 | 1987-10-20 | Fujitsu Limited | Semiconductor device for receiving light |
| JP2005116681A (en) * | 2003-10-06 | 2005-04-28 | Toshiba Corp | Optical conductor light-receiving element and its manufacturing process |
| CN1203555C (en) * | 2001-09-06 | 2005-05-25 | 住友电气工业株式会社 | ZnMgSSe set positive-essentially-negative photodiode and ZnMgSSe set avalanche diode |
| CN101232057A (en) * | 2004-10-25 | 2008-07-30 | 三菱电机株式会社 | Avalanche photodiode |
-
2010
- 2010-09-25 CN CN 201010290302 patent/CN102157599B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4701773A (en) * | 1982-11-08 | 1987-10-20 | Fujitsu Limited | Semiconductor device for receiving light |
| CN1203555C (en) * | 2001-09-06 | 2005-05-25 | 住友电气工业株式会社 | ZnMgSSe set positive-essentially-negative photodiode and ZnMgSSe set avalanche diode |
| JP2005116681A (en) * | 2003-10-06 | 2005-04-28 | Toshiba Corp | Optical conductor light-receiving element and its manufacturing process |
| CN101232057A (en) * | 2004-10-25 | 2008-07-30 | 三菱电机株式会社 | Avalanche photodiode |
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| CN105637657B (en) * | 2013-08-28 | 2017-12-15 | 华为技术有限公司 | Avalanche photodide |
| CN104505422A (en) * | 2014-10-30 | 2015-04-08 | 北京工业大学 | Self-extinguishing and self-recovering avalanche photodiode |
| CN104505422B (en) * | 2014-10-30 | 2017-04-05 | 北京工业大学 | A kind of self-gravitation self- recoverage avalanche photodide |
| CN104538484A (en) * | 2014-12-04 | 2015-04-22 | 中国科学院上海微系统与信息技术研究所 | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode |
| CN105261668A (en) * | 2015-11-23 | 2016-01-20 | 南京大学 | Heterojunction multiplication layer reinforced type AlGaN solar-blind avalanche photodiode and preparation method therefor |
| CN105609585B (en) * | 2015-12-16 | 2017-11-17 | 中国科学院上海微系统与信息技术研究所 | A kind of gas source molecular beam epitaxy material growth method of component alternation transition zone |
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| CN105742387A (en) * | 2016-02-29 | 2016-07-06 | 清华大学 | AlGaN gradient composition superlattice avalanche photodiode |
| CN105742387B (en) * | 2016-02-29 | 2017-08-11 | 清华大学 | AlGaN graded component superlattice avalanche photodiodes |
| CN106601839A (en) * | 2016-12-14 | 2017-04-26 | 中国科学院上海微系统与信息技术研究所 | Low defect metamorphic buffer layer of chirp digital-graded structure |
| CN106601839B (en) * | 2016-12-14 | 2018-03-09 | 中国科学院上海微系统与信息技术研究所 | A kind of low defect varied buffer layer of chirp numeral tapered structure |
| CN114497263A (en) * | 2018-07-11 | 2022-05-13 | 斯坦福国际研究院 | Photodiode without excessive noise |
| CN108982449A (en) * | 2018-07-23 | 2018-12-11 | 浙江大学 | Confocal scanning micro imaging system based on short-wave infrared APD |
| CN110047955A (en) * | 2019-03-08 | 2019-07-23 | 中山大学 | A kind of AlGaN ultraviolet avalanche photodiode detector and preparation method thereof |
| CN110518085A (en) * | 2019-05-05 | 2019-11-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Antimonide superlattice avalanche photodiode and preparation method thereof |
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| CN116705892B (en) * | 2023-06-07 | 2024-04-23 | 北京邮电大学 | Avalanche diode |
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