CN110518085B - Antimonide superlattice avalanche photodiode and preparation method thereof - Google Patents
Antimonide superlattice avalanche photodiode and preparation method thereof Download PDFInfo
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Abstract
The invention discloses an antimonide superlattice avalanche photodiode and a preparation method thereof. The photodiode includes: a P-type substrate; the P-type InAs/GaSb superlattice absorption layer is arranged on the P-type substrate; the P type InAsP/InAsSb superlattice charge layer is arranged on the P type InAs/GaSb superlattice absorption layer; the P type InAsP/InAsSb superlattice multiplication layer is arranged on the P type InAsP/InAsSb superlattice charge layer; the N-type InAsP/InAsSb superlattice contact layer is arranged on the P-type InAsP/InAsSb superlattice multiplication layer; a first electrode disposed on the P-type substrate; and the second electrode is arranged on the N-type InAsP/InAsSb superlattice contact layer. According to the invention, a brand new P-type InAsP/InAsSb superlattice is used as a charge layer and a multiplication layer, the transport of electrons is not influenced while a heterostructure is introduced, the ionization rate of holes and electrons of the InAsP/InAsSb superlattice is larger than that of a bulk material AlGaAsSb, the APD noise is smaller, and the multiplication layer is made of a material without Al and Ga, so that the device performance is more excellent.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an antimonide superlattice avalanche photodiode and a preparation method thereof.
Background
Infrared radiation detection is an important component of infrared technology, and infrared detectors play an important role in infrared imaging, medical treatment, military and other aspects. With the development of detector technology and the pursuit of higher performance of detectors, the detector technology is developed towards higher response speed, higher resolution, lower noise and higher sensitivity. The Avalanche Photo Diode (APD) has the unique advantages of high internal gain, high sensitivity, fast response speed and the like, and thus becomes an important development direction of the infrared detector.
At present, APD devices working in visible and near-infrared bands mainly adopt Si, Ge and InGaAs materials, and have been commercially applied due to their good performance, such as in the fields of laser radar, optical fiber communication, and the like. The main material of the APD device in the middle infrared band is mercury cadmium telluride (HgCdTe), and the prepared device has excellent performance and is an ideal material for manufacturing the APD in the middle infrared band. But is limited primarily to military use because of the high price of the materials.
The antimonide superlattice material is another choice of infrared detection materials, has the advantages of high quantum efficiency, small dark current, adjustable band gap, good material uniformity and the like, and has more excellent theoretical performance than mercury cadmium telluride. Since the antimonide superlattice has the potential to replace mercury cadmium telluride materials, the antimonide superlattice has been reported in 1987 and becomes an emerging development direction of infrared detectors. With the progress of material growth and device structure design, the performance of the conventional antimonide superlattice infrared detector is close to that of a mercury cadmium telluride detector, and the array packaging is realized abroad.
Although some progress has been made in antimonide infrared detectors, research and sampling of antimonide superlattice avalanche photodiodes is still lacking. Although few antimonide superlattice APDs have been reported: (Banerjee K,Ghosh S, Mallick S,et al.Applied Physics Letters,2009,94(20):651.Ghosh S,Mallick S, Banerjee K,et al.Journal of Electronic Materials,2008,37(12):1764-1769.) However, the devices reported at present basically adopt a simple PIN homogeneous structure (refer to fig. 1 for a schematic energy band diagram during reverse bias operation), adopt an InAs/GaSb superlattice as an absorption region and simultaneously also use the InAs/GaSb superlattice as an avalanche multiplication region, and have the advantages that electrons and holes generated by optical signals can be smoothly collected without barrier blocking, but the problems of large dark current, obvious noise and the like exist.
Disclosure of Invention
(I) technical problems to be solved by the invention
The invention solves the problems that: how to separate the absorption region and the avalanche multiplication region can restrain dark current without influencing minority carrier transport.
(II) the technical scheme adopted by the invention
In order to solve the technical problems, the invention adopts the following technical scheme:
an antimonide superlattice avalanche photodiode comprising:
a P-type substrate;
the P-type InAs/GaSb superlattice absorption layer is arranged on the P-type substrate;
the P type InAsP/InAsSb superlattice charge layer is arranged on the P type InAs/GaSb superlattice absorption layer;
the P type InAsP/InAsSb superlattice multiplication layer is arranged on the P type InAsP/InAsSb superlattice charge layer;
the N-type InAsP/InAsSb superlattice contact layer is arranged on the P-type InAsP/InAsSb superlattice multiplication layer;
a first electrode disposed on the P-type substrate; and
and the second electrode is arranged on the N-type InAsP/InAsSb superlattice contact layer.
Preferably, the material of the P-type InAs/GaSb superlattice absorption layer is Zn or Be doped InAs/GaSb superlattice.
Preferably, the material of the P-type InAsP/InAsSb superlattice charge layer and the P-type InAsP/InAsSb superlattice multiplication layer is Zn or Be doped InAsP/InAsSb superlattice.
Preferably, the material of the N-type InAsP/InAsSb superlattice contact layer is Si-doped InAsP/InAsSb superlattice.
Preferably, the effective bandwidth of the P-type InAsP/InAsSb superlattice charge layer and the P-type InAsP/InAsSb superlattice multiplication layer is larger than that of the P-type InAsP/GaSb superlattice absorption layer; the conduction bands of the P type InAsP/InAsSb superlattice charge layer, the P type InAsP/InAsSb superlattice multiplication layer and the P type InAs/GaSb superlattice absorption layer are flush.
The invention also discloses a preparation method of the antimonide superlattice avalanche photodiode, which comprises the following steps:
providing a P-type substrate;
sequentially growing a P-type InAs/GaSb superlattice absorption layer, a P-type InAsP/InAsSb superlattice charge layer, a P-type InAsP/InAsSb superlattice multiplication layer and an N-type InAsP/InAsSb superlattice contact layer on a P-type substrate;
manufacturing a first electrode on the P-type substrate; and
and manufacturing a second electrode on the N-type InAsP/InAsSb superlattice contact layer.
Preferably, the specific method for manufacturing the first electrode on the P-type substrate comprises the following steps:
etching local materials of the N-type InAsP/InAsSb superlattice contact layer, the P-type InAsP/InAsSb superlattice multiplication layer, the P-type InAsP/InAsSb superlattice charge layer and the P-type InAs/GaSb superlattice absorption layer to expose the P-type substrate and form a detector table;
and manufacturing and forming a first electrode in the exposed area of the P-type substrate.
Preferably, a metal organic chemical vapor deposition process is adopted to sequentially grow and form the P-type InAs/GaSb superlattice absorption layer, the P-type InAsP/InAsSb superlattice charge layer, the P-type InAsP/InAsSb superlattice multiplication layer and the N-type InAsP/InAsSb superlattice contact layer on the P-type substrate.
Preferably, a molecular beam epitaxy process is adopted to sequentially grow and form the P-type InAs/GaSb superlattice absorption layer, the P-type InAsP/InAsSb superlattice charge layer, the P-type InAsP/InAsSb superlattice multiplication layer and the N-type InAsP/InAsSb superlattice contact layer on the P-type substrate.
Preferably, the effective bandwidth of the P-type InAsP/InAsSb superlattice charge layer and the P-type InAsP/InAsSb superlattice multiplication layer is larger than that of the P-type InAsP/GaSb superlattice absorption layer; the conduction bands of the P type InAsP/InAsSb superlattice charge layer, the P type InAsP/InAsSb superlattice multiplication layer and the P type InAs/GaSb superlattice absorption layer are flush.
(III) advantageous effects
(1) The invention provides an antimonide superlattice avalanche photodiode, which is different from an antimonide superlattice avalanche photodiode with a simple homogeneous PIN structure, a hole type heterojunction is formed between an InAs/GaSb superlattice absorption region, an InAsP/InAsSb superlattice charge layer and a multiplication layer, the voltage of an APD device is dropped on an InAsP/InAsSb superlattice material, electrons generated by optical signals are not blocked and are smoothly injected into the InAsP/InAsSb superlattice multiplication region, and therefore dark current is reduced, and smooth collection of photocurrent is guaranteed.
(2) The invention provides an antimonide superlattice avalanche photodiode, wherein a multiplication layer material is InAsP/InAsSb superlattice, the antimonide superlattice avalanche photodiode is a brand-new hole barrier material, the ionization rate of holes and electrons of the antimonide superlattice avalanche photodiode is larger than that of an AlGaAsSb material, the APD noise factor is smaller, and compared with the InAs/GaSb superlattice and the AlGaAsSb material, the antimonide superlattice avalanche photodiode does not contain Al and Ga, has fewer material defects, is not easy to oxidize, and has higher material quality and device performance. The charge layer material is also an InAsP/InAsSb superlattice for controlling the electric field distribution in the APD.
(3) The invention provides an antimonide superlattice avalanche photodiode, which adopts a P-type superlattice absorption layer, is an electronic APD, and has longer minority carrier lifetime, lower noise and higher detection sensitivity compared with a hole-type APD of an N-type superlattice absorption layer.
Drawings
FIG. 1 is a schematic diagram of the energy bands of a prior art avalanche photodiode during reverse bias operation;
FIG. 2 is a schematic diagram of the energy bands of another prior art avalanche photodiode during reverse bias operation;
FIGS. 3A-3D are schematic diagrams of the fabrication of an antimonide superlattice avalanche photodiode in accordance with an embodiment of the present invention;
fig. 4 is a schematic energy band diagram of an antimonide superlattice avalanche photodiode in reverse bias operation in accordance with an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example one
As shown in fig. 3D, the antimonide superlattice avalanche photodiode in this embodiment includes a P-type substrate 10, a P-type InAs/GaSb superlattice absorption layer 20 disposed on the P-type substrate 10, a P-type InAsP/InAsSb superlattice charge layer 30 disposed on the P-type InAs/GaSb superlattice absorption layer 20, a P-type InAsP/InAsSb superlattice multiplication layer 40 disposed on the P-type InAsP/InAsSb superlattice charge layer 30, an N-type InAsP/InAsSb superlattice contact layer 50 disposed on the P-type InAsP/InAsSb superlattice multiplication layer 40, a first electrode 60 disposed on the P-type substrate 10, and a second electrode 70 disposed on the N-type InAsP/InAsSb superlattice contact layer 50.
Further, the effective bandwidth of the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAsP/InAsSb superlattice multiplication layer 40 is larger than that of the P-type InAsP/GaSb superlattice absorption layer 20. The conduction bands of the P-type InAsP/InAsSb superlattice charge layer 30, the P-type InAsP/InAsSb superlattice multiplication layer 40 and the P-type InAsP/GaSb superlattice absorption layer 20 are flush, so that a heterojunction structure can be formed.
As a preferred embodiment, the material of the P-type InAs/GaSb superlattice absorption layer 20 is an InAs/GaSb superlattice doped with Zn or Be, the material of the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAsP/InAsSb superlattice multiplication layer 40 is an InAsP/InAsSb superlattice doped with Zn or Be, and the material of the N-type InAsP/InAsSb superlattice contact layer 50 is an InAsP/InAsSb superlattice doped with Si.
The partial structures of the N-type InAsP/InAsSb superlattice contact layer 50, the P-type InAsP/InAsSb superlattice multiplication layer 40, the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAs/GaSb superlattice absorption layer 20 are etched to expose the P-type substrate 10 to form a detector table, and the first electrode 60 is arranged on an exposed area of the P-type substrate 10.
Fig. 2 shows another energy band diagram of an avalanche photodiode in the prior art during reverse bias operation, in which an InAs/GaSb superlattice material is used as an absorption region material, an AlGaAsSb material is used as a multiplication layer material, and after AlGaAsSb is introduced into a device structure, electrons in a detector cannot be injected into the AlGaAsSb multiplication layer smoothly and collected by an N-type electrode due to the fact that AlGaAsSb is an electron barrier for the InAs/GaSb superlattice, resulting in a small photocurrent. And the AlGaAsSb contains Ga and Al elements as the material of the multiplication layer, so that the problems of more point defects, easy oxidation of the material and the like exist during the growth, and the growth quality of the material is not high.
Fig. 4 shows a schematic energy band structure diagram of a photodiode according to the first embodiment of the present invention when a device composed of a P-type InAs/GaSb superlattice absorption layer 20, a P-type InAsP/InAsSb superlattice charge layer 30, a P-type InAsP/InAsSb superlattice multiplication layer 40, and an N-type InAsP/InAsSb superlattice contact layer 50 is operated in reverse bias mode. A heterojunction is formed between the P-type InAsP/InAsSb superlattice multiplication layer 40 and the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAsP/GaSb superlattice absorption layer 20, so that holes can be blocked, and dark current can be reduced. Electrons generated after optical signal absorption can be smoothly injected into the P type InAsP/InAsSb superlattice charge layer 30 and the multiplication layer, impact ionization multiplication is generated, and finally the electrons are smoothly collected in the N type InAsP/InAsSb superlattice contact layer 50. In the design of the invention, the electric field of the APD during working is completely reduced on the InAsP/InAsSb superlattice multiplication layer 40 with larger bandwidth, the InAsP/InAsSb superlattice charge layer 30 is used for adjusting the electric field distribution, and the electric field of the InAsP/GaSb superlattice absorption layer 20 is very small, thus forming the APD device with separated absorption and multiplication.
Example two
Fig. 3A to 3D show a flow chart of a method for fabricating an antimonide superlattice avalanche photodiode according to an embodiment of the invention, which includes the following steps:
the method comprises the following steps: referring to FIG. 3A, a P-type substrate 10 is provided, the P-type substrate 1 is preferably a P-type InAs substrate with a doping concentration of 1 × 1019cm-3。
Step two: referring to fig. 3B, a P-type InAs/GaSb superlattice absorption layer 20, a P-type InAsP/InAsSb superlattice charge layer 30, a P-type InAsP/InAsSb superlattice multiplication layer 40, and an N-type InAsP/InAsSb superlattice contact layer 50 are sequentially grown on the P-type substrate 10.
As a preferred embodiment, Metal Organic Chemical Vapor Deposition (MOCVD) is adopted as a growth process, and the growth sources are TMIn, TMGa and AsH3And pH3The N-type doping source is SiH4The growth temperature of the P-type doping source DEZn is 600 ℃, and the pressure of the reaction chamber is 200 Torr. After removing impurities on the surface of the P-type substrate 10 by high-temperature treatment, sequentially growing:
(1) a P-type InAs/GaSb superlattice absorption layer 20, wherein the P-type InAs/GaSb superlattice absorption layer 20 comprises InAs/GaSb superlattice with the thickness of 3 μm, each layer is doped with Zn with the doping concentration of 5 multiplied by 1016cm-3The corresponding bandwidth is 0.12 eV;
(2) the P-type InAsP/InAsSb superlattice charge layer 30 comprises a 20nm thick InAsP/InAsSb superlattice, each layer is doped with Zn with the doping concentration of 1 multiplied by 1018cm-3The corresponding bandwidth is 0.3 eV;
(3) the P-type InAsP/InAsSb superlattice multiplication layer 40, wherein the P-type InAsP/InAsSb superlattice multiplication layer 4 comprises an InAsP/InAsSb superlattice with the thickness of 0.5 mu m, and each layer is doped with Zn or Be with the doping concentration of 1 multiplied by 1017cm-3The corresponding bandwidth is 0.3 eV;
(4) an N-type InAsP/InAsSb superlattice contact layer 50, wherein the N-type InAsP/InAsSb superlattice contact layer 50 comprises an InAsP/InAsSb superlattice with the thickness of 0.5 mu m, and each layer is doped with Si with the doping concentration of 2 multiplied by 1018cm-3The corresponding bandwidth is 0.3 eV.
The effective bandwidth of the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAsP/InAsSb superlattice multiplication layer 40 is larger than that of the P-type InAsP/GaSb superlattice absorption layer 20. The conduction bands of the P-type InAsP/InAsSb superlattice charge layer 30, the P-type InAsP/InAsSb superlattice multiplication layer 40 and the P-type InAsP/GaSb superlattice absorption layer 20 are flush, so that a heterojunction structure can be formed.
Step three: referring to fig. 3C and 3D, a first electrode 60 is fabricated on the P-type substrate 10.
Specifically, the third step includes a first step and a second step:
step three, firstly: and etching local materials of the N-type InAsP/InAsSb superlattice contact layer 50, the P-type InAsP/InAsSb superlattice multiplication layer 40, the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAs/GaSb superlattice absorption layer 20 by adopting an inductive coupling plasma etching (ICP) process, wherein the etching depth is 4.5 mu m, and the P-type substrate 10 is exposed to form a detector table board.
Step three: a first electrode 60 is fabricated on the exposed region of the P-type substrate 10.
Specifically, Ti, Pt, Au are sequentially stacked and combined on the exposed region of the P-type substrate 10 using an electron beam evaporation process to form the first electrode 60. Wherein Ti has a thickness of
Thickness of Pt is
Thickness of Au of
Step four: referring to fig. 3D, a second electrode 70 is fabricated on the N-type InAsP/InAsSb superlattice contact layer 50.
Specifically, Ti, Pt, and Au are sequentially stacked and combined on the N-type InAsP/InAsSb superlattice contact layer 50 to form the second electrode 70 by using an electron beam evaporation process. Wherein Ti has a thickness of
Thickness of Pt is
Thickness of Au of
In the second embodiment, an industrialized MOCVD process is adopted for growth, so that the cost can be reduced, and the cost performance can be improved. The bandwidth of the InAs/GaSb superlattice absorption layer is 0.12eV, the corresponding cutoff wavelength is about 10 μm, and the InAs/GaSb superlattice absorption layer is a long-wave device. The whole process flow is suitable for manufacturing a long-wave antimonide superlattice avalanche photodiode focal plane detector array with high performance.
EXAMPLE III
Fig. 3A to 3D show a flow chart of a method for fabricating an antimonide superlattice avalanche photodiode according to an embodiment of the invention, which includes the following steps:
the method comprises the following steps: referring to fig. 3A, a P-type substrate 10 is provided, the P-type substrate 10 is preferably a P-type GaSb substrate with a doping concentration of 2 × 1018cm-3。
Step two: referring to fig. 3B, a P-type InAs/GaSb superlattice absorption layer 20, a P-type InAsP/InAsSb superlattice charge layer 30, a P-type InAsP/InAsSb superlattice multiplication layer 40, and an N-type InAsP/InAsSb superlattice contact layer 50 are sequentially grown on the P-type substrate 10.
A Molecular Beam Epitaxy (MBE) process is adopted As a growth process, growth sources are solid elementary substance sources In, Ga, As, Sb and P, an N-type doping source is Si, and a P-type doping source is Be. The growth temperature was 400 ℃. And (3) degassing and removing impurities from the P-type substrate 1, and then sequentially growing:
(1) a P-type InAs/GaSb superlattice absorption layer 20, wherein the P-type InAs/GaSb superlattice absorption layer 20 comprises a 2.0 μm thick InAs/GaSb superlattice, each layer is doped with Be with the doping concentration of 2 multiplied by 1016cm-3Corresponding to a bandwidth of 0.25 eV;
(2) the P-type InAsP/InAsSb superlattice charge layer 30 comprises a 50nm thick InAsP/InAsSb superlattice, each layer is doped with Be with the doping concentration of 2 multiplied by 1018cm-3Corresponding to a bandwidth of 0.5 eV;
(3) the P-type InAsP/InAsSb superlattice multiplication layer 40, wherein the P-type InAsP/InAsSb superlattice multiplication layer 40 comprises an InAsP/InAsSb superlattice with the thickness of 0.45 mu m, each layer is doped with Be, and the doping concentration is 2 multiplied by 1017cm-3The corresponding bandwidth is 0.5 eV;
(4) an N-type InAsP/InAsSb superlattice contact layer 50, wherein the N-type InAsP/InAsSb superlattice contact layer 50 comprises an InAsP/InAsSb superlattice with the thickness of 0.45 mu m, and each layer is doped with Si with the doping concentration of 5 multiplied by 1018cm-3The corresponding bandwidth is 0.5 eV.
The effective bandwidth of the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAsP/InAsSb superlattice multiplication layer 40 is larger than that of the P-type InAsP/GaSb superlattice absorption layer 20. The conduction bands of the P-type InAsP/InAsSb superlattice charge layer 30, the P-type InAsP/InAsSb superlattice multiplication layer 40 and the P-type InAsP/GaSb superlattice absorption layer 20 are flush, so that a heterojunction structure can be formed.
Step three: referring to fig. 3C and 3D, a first electrode 60 is fabricated on the P-type substrate 10.
Specifically, the third step includes a first step and a second step:
step three, firstly: and etching local materials of the N-type InAsP/InAsSb superlattice contact layer 50, the P-type InAsP/InAsSb superlattice multiplication layer 40, the P-type InAsP/InAsSb superlattice charge layer 30 and the P-type InAs/GaSb superlattice absorption layer 20 by adopting a wet etching process, wherein the etching depth is 3.5 mu m, and the P-type GaSb substrate 10 is exposed to form a detector table board.
Step three: a first electrode 60 is fabricated on the exposed region of the P-type substrate 10.
Specifically, Ti, Pt, Au are sequentially stacked and combined on the exposed region of the P-type substrate 10 using an electron beam evaporation process to form the first electrode 60. Wherein Ti has a thickness of
Thickness of Pt is
Thickness of Au of
Step four: referring to fig. 3D, a second electrode 70 is fabricated on the N-type InAsP/InAsSb superlattice contact layer 50.
Specifically, Ti, Pt, and Au are sequentially stacked and combined on the N-type InAsP/InAsSb superlattice contact layer 50 to form the second electrode 70 by using an electron beam evaporation process. Wherein Ti has a thickness of
Thickness of Pt is
Thickness of Au of
In the embodiment, a common MBE process is used, the bandwidth of the InAs/GaSb superlattice absorption layer is 0.25eV, the wavelength is correspondingly cut to about 5 μm, and the InAs/GaSb superlattice absorption layer is a medium-wave device. The medium wave antimonide superlattice detector provided by the embodiment has high performance because the MBE process can form a steep interface.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (10)
1. An antimonide superlattice avalanche photodiode, comprising:
a P-type substrate (10);
the P-type InAs/GaSb superlattice absorption layer (20) is arranged on the P-type substrate (10);
the P type InAsP/InAsSb superlattice charge layer (30) is arranged on the P type InAs/GaSb superlattice absorption layer (20);
the P-type InAsP/InAsSb superlattice multiplication layer (40) is arranged on the P-type InAsP/InAsSb superlattice charge layer (30);
the N-type InAsP/InAsSb superlattice contact layer (50) is arranged on the P-type InAsP/InAsSb superlattice multiplication layer (40);
a first electrode (60) disposed on the P-type substrate (10); and
and the second electrode (70) is arranged on the N-type InAsP/InAsSb superlattice contact layer (50).
2. The antimonide superlattice avalanche photodiode according to claim 1, wherein the material of the P-type InAs/GaSb superlattice absorption layer (20) is a Zn or Be doped InAs/GaSb superlattice.
3. The antimonide superlattice avalanche photodiode according to claim 1, wherein the material of the P-type InAsP/InAsSb superlattice charge layer (30) and the P-type InAsP/InAsSb superlattice multiplication layer (40) is a Zn or Be doped InAsP/InAsSb superlattice.
4. The antimonide superlattice avalanche photodiode according to claim 1, wherein the material of the N-type InAsP/InAsSb superlattice contact layer (50) is a Si-doped InAsP/InAsSb superlattice.
5. The antimonide superlattice avalanche photodiode according to any one of claims 1 to 4, wherein the effective bandwidths of the P-type InAsP/InAsSb superlattice charge layer (30) and the P-type InAsP/InAsSb superlattice multiplication layer (40) are larger than the effective bandwidth of the P-type InAs/GaSb superlattice absorption layer (20); the conduction bands of the P type InAsP/InAsSb superlattice charge layer (30), the P type InAsP/InAsSb superlattice multiplication layer (40) and the P type InAs/GaSb superlattice absorption layer (20) are flush.
6. A method for preparing an antimonide superlattice avalanche photodiode, comprising:
providing a P-type substrate (10);
sequentially growing a P-type InAs/GaSb superlattice absorption layer (20), a P-type InAsP/InAsSb superlattice charge layer (30), a P-type InAsP/InAsSb superlattice multiplication layer (40) and an N-type InAsP/InAsSb superlattice contact layer (50) on a P-type substrate (10);
manufacturing a first electrode (60) on the P-type substrate (10); and
and manufacturing a second electrode (70) on the N-type InAsP/InAsSb superlattice contact layer (50).
7. The method of fabricating an antimonide superlattice avalanche photodiode according to claim 6, wherein the specific method of fabricating the first electrode (60) on the P-type substrate (10) includes:
etching local materials of the N-type InAsP/InAsSb superlattice contact layer (50), the P-type InAsP/InAsSb superlattice multiplication layer (40), the P-type InAsP/InAsSb superlattice charge layer (30) and the P-type InAsP/GaSb superlattice absorption layer (20) to expose a P-type substrate (10) to form a detector table;
and forming a first electrode (60) in the exposed area of the P-type substrate (10).
8. The method for preparing the antimonide superlattice avalanche photodiode according to claim 6, wherein the P-type InAsP/GaSb superlattice absorption layer (20), the P-type InAsP/InAsSb superlattice charge layer (30), the P-type InAsP/InAsSb superlattice multiplication layer (40) and the N-type InAsP/InAsSb superlattice contact layer (50) are sequentially grown on the P-type substrate (10) by adopting a metal organic chemical vapor deposition process.
9. The method for preparing an antimonide superlattice avalanche photodiode according to claim 6, wherein a molecular beam epitaxy process is adopted to grow and form the P type InAs/GaSb superlattice absorption layer (20), the P type InAsP/InAsSb superlattice charge layer (30), the P type InAsP/InAsSb superlattice multiplication layer (40) and the N type InAsP/InAsSb superlattice contact layer (50) on the P type substrate (10) in sequence.
10. The method of fabricating an antimonide superlattice avalanche photodiode according to any one of claims 6 to 9, wherein the effective bandwidth of the P-type InAsP/InAsSb superlattice charge layer (30) and the P-type InAsP/InAsSb superlattice multiplication layer (40) is larger than the effective bandwidth of the P-type InAs/GaSb superlattice absorption layer (20); the conduction bands of the P type InAsP/InAsSb superlattice charge layer (30), the P type InAsP/InAsSb superlattice multiplication layer (40) and the P type InAs/GaSb superlattice absorption layer (20) are flush.
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