CN104617181B - ITO current expansion layer based InGaAs avalanche infrared detector and preparation method thereof - Google Patents
ITO current expansion layer based InGaAs avalanche infrared detector and preparation method thereof Download PDFInfo
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- CN104617181B CN104617181B CN201510030904.3A CN201510030904A CN104617181B CN 104617181 B CN104617181 B CN 104617181B CN 201510030904 A CN201510030904 A CN 201510030904A CN 104617181 B CN104617181 B CN 104617181B
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 31
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
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- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 6
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- 238000010521 absorption reaction Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses an ITO current expansion layer based InGaAs avalanche infrared detector and a preparation method thereof. The detector comprises a buffering layer, a multiplication layer, a gradient layer, an electric charge layer, an absorbing layer and a contact layer which are sequentially formed on the front surface of a substrate; an ITO current expansion layer is also arranged on the rear surface of the substrate. The preparation method comprises the steps of developing an epitaxial structural layer on the front surface of the substrate; arranging a mask layer on the absorbing layer in the epitaxial structural layer; processing an opening in the mask layer; performing Zn dispersion through the opening so as to form the contact layer in a local area at the surface layer of the absorbing layer; arranging a passivating layer in the surface area of the absorbing layer without Zn dispersion; depositing electrode on the contact layer; forming a current expansion layer on the rear surface of the substrate; manufacturing a metal electrode in the periphery of the current expansion. The detector has the characteristics of being high in working speed, resolution and responsivity, and can be efficiently applied to the fields such as the phoelectron information communication field; meanwhile, the preparation process is simple and easily carried out, the cost is low, and mass production can be carried out.
Description
Technical field
The present invention relates to a kind of semiconductor infrared detector, more particularly to a kind of InGaAs based on ITO current extendings
Snowslide Infrared Detectors and its preparation technology, belong to semiconductor device field.
Background technology
21 century, is the epoch of opto-electronic information technology, and this technology not only changes the life style of people, and pushes away
New Industrial Revolution is moved.Fibre Optical Communication Technology is the basis of modern communication technology, and its development relies on semi-conductor photoelectronic device
Breakthrough in terms of part.The sensitivity of photosignal detection, institute can be greatly improved due to the avalanche multiplication effect using carrier
With in optical-fibre communications, commonly used photomultiplier transit diode（APD）As the detector of system.The amount for quickly growing in recent years
The single-photon detector that sub- secure communication needs is also based on the device of photomultiplier transit diode.Due in 1310nm and 1550nm
Near wavelength, silica optical fiber has minimum loss and dispersion, and absorption coefficients of the InGaAs near this wavelength is high
（104cm-1）, the film APD devices that it makes have responsiveness and sensitivity relatively high for making detector, so InGaAs materials
Material system makes APD and progressively replaces silicon, is widely used in fiber optic applications field.InGaAs Infrared Detectors is in multiplication
In the selection in area, what is be applied first is InP materials, but because InAlAs materials have the gain of lower noise and Geng Gao
Characteristic, makes it possess extensive research and application prospect.
In recent years, the research of InGaAs snowslides Infrared Detectors, it is main or around InP as multiplication region structure；It is existing
The research and development of InGaAs/InAlAs snowslide Infrared Detectors are progressively carried out abroad, but the research of Chinese this respect is also compared
It is more delayed.In theoretical side, InGaAs/InAlAs has had more complete system, and related physical model can also be suitable
The performance of Different structural parameters device is simulated in big degree；In epitaxial growth, InAlAs materials are due to difficulties such as easy oxidations
Point, quality is also less desirable.Simultaneously because to consider the incident problem of light, electrode is using local production method, the receipts of electric current
Collection efficiency is affected so as to reduce device performance.
At present, with the progress of informationization technology, the requirement to the transmission speed of information is also increasingly faster, and this requires red
The features such as external detector will possess fast-response speed, high-resolution, low noise, but existing Infrared Detectors is difficult to meet this
It is a little to require.
The content of the invention
It is a primary object of the present invention to provide a kind of InGaAs snowslides Infrared Detectors based on ITO current extendings and
Its preparation method, to overcome deficiency of the prior art.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
A kind of InGaAs snowslide Infrared Detectors based on ITO current extendings, it includes being sequentially formed in substrate face
On cushion, dynode layer, gradual change, charge layer, absorbed layer and contact layer, and the substrate back is additionally provided with ITO current expansions
Layer.
Used as more one of preferred embodiment, the material of the dynode layer is at least selected from eigen I n0.52Al0.48As materials
Material.
Further, In0.52Al0.48As dynode layers are to be placed in substrate by buried technology.
Used as more one of preferred embodiment, the material of the charge layer is at least selected from N-shaped heavy doping
In0.53Ga0.47As materials.
Used as more one of preferred embodiment, the material of the absorbed layer is at least selected from eigen I n0.53Ga0.47As materials
Material.
Used as more one of preferred embodiment, the material of the graded bedding is at least selected from In0.78Ga0.22As0.47P0.53
Material.
Used as more one of preferred embodiment, the contact layer is at least selected from and is diffuseed to form in the absorbed layer by Zn
P-type In0.53Ga0.47As contact layers.
Used as more one of preferred embodiment, the substrate is at least selected from N-shaped InP substrate.
Further, the substrate back is additionally provided with the electrode in electrical contact with the ITO current extendings, and in electricity
Light incidence window is formed between pole.
Used as more one of preferred embodiment, the Infrared Detectors has flatness device architecture.
The preparation method of the InGaAs snowslide Infrared Detectors based on ITO current extendings, including：
In substrate face successively grown buffer layer, dynode layer, graded bedding, charge layer and absorbed layer, wherein absorbed layer is used
i-In0.53Ga0.47As absorbed layers；
Mask layer is set on absorbed layer, and opening is processed on mask layer, and thereby opening carries out Zn diffusions, so that
Regional area on absorbed layer top layer forms p-type In0.53Ga0.47As contact layers；
In the absorbed layer surface region for not carrying out Zn diffusions, passivation layer is set, and in p-type In0.53Ga0.47Formed sediment on As contact layers
Product metal electrode；
ITO current extendings are formed in substrate back and make metal electrode in ITO current extendings periphery.
Compared with prior art, beneficial effects of the present invention include：The InGaAs snowslide Infrared Detectors is in infrared spectrum
Obvious response current is able to observe that under irradiation, and response speed and resolution ratio are significantly improved, noise is substantially reduced, Ke Yigeng
The fields such as optoelectronic information communication are efficiently applied to, while its preparation process is simple is easily implemented, it is with low cost, it is suitable to scale
Production.
Brief description of the drawings
Fig. 1 is a kind of planar structure schematic diagram of InGaAs snowslides Infrared Detectors in an exemplary embodiments of the invention；
Fig. 2 is a kind of InGaAs snowslides Infrared Detectors process chart in an exemplary embodiments of the invention；
Fig. 3 is electric field of a kind of InGaAs snowslides Infrared Detectors in applying bias point in an exemplary embodiments of the invention
Cloth schematic diagram.
Specific embodiment
In view of deficiency of the prior art, inventor is able to propose of the invention through studying for a long period of time and largely put into practice
Technical scheme.The present invention is further detailed explanation for table and some case study on implementation below in conjunction with the accompanying drawings.
One aspect of the present invention provides a kind of InGaAs snowslide Infrared Detectors based on ITO current extendings, its
Including the cushion, dynode layer, graded bedding, charge layer, absorbed layer and the contact layer that are sequentially formed in substrate face, and the lining
Bottom back side is additionally provided with ITO current extendings.
In the detector, it is preferred to use N-shaped InP does substrate.
In the detector, it is preferred to use eigen I n0.52Al0.48As materials can make device as the dynode layer of carrier
The excess noise of part reduces, resolution ratio is improved；Further, dynode layer is placed in substrate using buried technology, can reduce device
The possibility of part edge breakdown.
In the detector, it is preferred to use In0.78Ga0.22As0.47P0.53Used as graded bedding, its bandwidth is material
1.0eV, as In0.53Ga0.47As materials and In0.52Al0.48The intermediate layer of As materials, is conducive to reducing the response device time.
In the detector, it is preferred to use N-shaped heavy doping In0.53Ga0.47, used as charge layer, it being capable of adjusting means for As
Internal Electric Field Distribution and intensity, boost device speed and responsiveness.
In the detector, it is preferred to use eigen I n0.53Ga0.47As is used as light absorbing zone
In0.78Ga0.22As0.47P0.53As In0.52Al0.48As and In0.53Ga0.47Graded bedding between As materials.
In the detector, p-type In0.53Ga0.47As contact layers are preferably diffuseed to form by Zn in Intrinsic Gettering layer, this
Burying pn-junction can omit reliability of technology surface passivation not high, to reduce dark current and meet repeatable requirement.
Postscript, In0.53Ga0.47As、In0.52Al0.48As、In0.78Ga0.22As0.47P0.53Material all with InP substrate lattice
Match somebody with somebody, the defect inside epitaxial layer can be reduced, obtain the device of high-crystal quality.
Further, in the detector, it is preferred to use ITO is covered in plane of incidence surface as current extending, can
To improve the current collection efficiency of device.
Further, in the detector, it is preferred to use the metal electrode contacted with ITO can be made using Ni/Au
Make.
Further, in the detector, p-type In0.53Ga0.47As diffusion layers and highly doped n-type InP substrate are to make
It is contact layer.
Further, the structure of the detector is plane.
The features such as Infrared Detectors of the invention has high operation speed, resolution ratio and responsiveness.
It is red that another aspect of the present invention additionally provides the InGaAs snowslides based on ITO current extendings described in a kind of preparation
The method of external detector, it includes：
In substrate face successively grown buffer layer, dynode layer, graded bedding, charge layer and absorbed layer, wherein absorbed layer is used
i-In0.53Ga0.47As absorbed layers；
Mask layer is set on absorbed layer, and opening is processed on mask layer, and thereby opening carries out Zn diffusions, so that
Regional area on absorbed layer top layer forms p-type In0.53Ga0.47As contact layers；
In the absorbed layer surface region for not carrying out Zn diffusions, passivation layer is set, and in p-type In0.53Ga0.47Formed sediment on As contact layers
Product metal electrode；
ITO current extendings are formed in substrate back and make metal electrode in ITO current extendings periphery.
Technical scheme is further described below in conjunction with drawings and Examples.
Refer to shown in Fig. 1, a kind of InGaAs snowslides based on ITO current extendings are red in an exemplary embodiments of the invention
External detector includes：
One substrate layer 10；
One cushion 20, thickness is more than 0.2um, and the buffer growth is over the substrate 10；
One dynode layer 30, between 0.5um to 1.5um, the dynode layer 30 is grown on cushion 20 thickness, described 30 times
Increasing layer is eigen I n0.52Al0.48As;
One graded bedding 40, between 0.02um to 0.1um, the graded bedding 40 is grown on dynode layer 30 thickness, and described 40
Graded bedding is eigen I n0.78Ga0.22As0.47P0.53；
One charge layer 50, between 0.08um to 0.2um, the charge layer 50 is grown on graded bedding 40 thickness, and described 50
Charge layer is N-shaped heavy doping In0.53Ga0.47As；
One absorbed layer 60, between 0.8um to 2um, the absorbed layer 60 is grown on charge layer 50 thickness, and described 60 absorb
Layer is In0.53Ga0.47As；
On absorbed layer 60 p-type In is formed using Zn diffusion techniques0.53Ga0.47As contact layers 61, P type contact layer thickness exists
Between 0.2um to 1um；
Pd/Zn/Pd/Au electrodes 62 are made on contact layer 61；
In p-type In0.53Ga0.47Passivation layer 63, the passivation layer 63 are made on As contact layers 61 and the interface of absorbed layer 60
Quantity have two；
One ITO current extendings 70, the current extending is produced on the back side of substrate 10, is made in current extending both sides
Ni/Au electrodes 80, and light incidence window 81 is formed between the electrodes.
Fig. 1-Fig. 2 is referred to, a kind of InGaAs snowslides based on ITO current extendings are red in an exemplary embodiments of the invention
The preparation method of external detector can be comprised the following specific steps that：
Step 1：Using thin film epitaxial growth equipment in n+- InP substrate front growing epitaxial layers, including system is grown successively
Make a cushion, a dynode layer, a graded bedding, a charge layer and an absorbed layer；
Step 2：One layer of SiO is deposited on absorbed layer2As mask layer；
Step 3：In SiO2Opening is made in photoetching on mask layer, and i-In is carried out by diffusion facilities0.53Ga0.47As absorbed layers
Zn diffusions, absorbed layer top layer is formed p-type In0.53Ga0.47As；
Step 4：Using PECVD methods Si is deposited in the absorbed layer region for not carrying out Zn diffusions3N4It is passivated；
Step 5：In front p-type In0.53Ga0.47Metal electrode is deposited on As, the electrode is Pd/Zn/Pd/Au, alloy bar
Part is to be annealed 2 to 10 minutes between 350 to 380 DEG C；
Step 6：By substrate thinning and polish；
Step 7：Ito thin film is made in substrate back, this film can improve the collection efficiency of electric current, and to infrared light
The absorption of spectrum is very faint, and infrared light can enter device through ITO；
Step 8：SiO is deposited on ITO2And photoetching, metal electrode is made in device ITO peripheries, the electrode is Ni/Au.
Refer to again shown in Fig. 3 is that Electric Field Distribution of the InGaAs snowslides Infrared Detectors in applying bias is illustrated
Figure, it can be seen that wherein charge layer can adjust Electric Field Distribution, the enough speed that the electronics made into dynode layer has triggers snowslide to imitate
Should, so as to amplify photosignal.And the Infrared Detectors is able to observe that obvious response electricity under infrared spectrum irradiation
Stream, fast response time, high resolution, under 100 times of gains noise be only existing InGaAs snowslides Infrared Detectors two/
One.
It should be appreciated that above-described embodiment is only explanation technology design of the invention and feature, this is familiar with its object is to allow
The personage of item technology will appreciate that present disclosure and implement according to this that it is not intended to limit the scope of the present invention.It is all
According to the equivalent change or modification that spirit of the invention is made, should all be included within the scope of the present invention.
Claims (5)
1. a kind of InGaAs snowslide Infrared Detectors based on ITO current extendings, it is characterised in that including being sequentially formed in lining
Cushion, dynode layer, graded bedding, charge layer, absorbed layer and contact layer on the front of bottom, and the substrate back is additionally provided with ITO
Current extending；The material of the dynode layer is selected from eigen I n0.52Al0.48As materials, the material of the graded bedding is selected from
In0.78Ga0.22As0.47P0.53Material, the material of the charge layer is selected from N-shaped heavy doping In0.53Ga0.47As materials, the absorption
The material of layer is selected from eigen I n0.53Ga0.47As materials, the contact layer is selected from the p-type diffuseed to form in the absorbed layer by Zn
In0.53Ga0.47As contact layers.
2. the InGaAs snowslide Infrared Detectors based on ITO current extendings according to claim 1, it is characterised in that
The substrate is at least selected from N-shaped InP substrate.
3. the InGaAs snowslide Infrared Detectors based on ITO current extendings according to claim 2, it is characterised in that
The substrate back is additionally provided with the electrode in electrical contact with the ITO current extendings, and is formed with light between the electrodes and enters
Penetrate window.
4. the InGaAs snowslide Infrared Detectors based on ITO current extendings according to claim 1, it is characterised in that
The Infrared Detectors has flatness device architecture.
5. the preparation side of the InGaAs snowslide Infrared Detectors of ITO current extendings is based on any one of claim 1-4
Method, it is characterised in that including：
In substrate face successively grown buffer layer, dynode layer, graded bedding, charge layer and absorbed layer, wherein absorbed layer uses i-
In0.53Ga0.47As absorbed layers；
Mask layer is set on absorbed layer, and opening is processed on mask layer, and thereby opening carries out Zn diffusions, so as to inhale
The regional area for receiving layer top layer forms p-type In0.53Ga0.47As contact layers；
In the absorbed layer surface region for not carrying out Zn diffusions, passivation layer is set, and in p-type In0.53Ga0.47Gold is deposited on As contact layers
Category electrode；
ITO current extendings are formed in substrate back and make metal electrode in ITO current extendings periphery.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005046190A1 (en) * | 2005-09-27 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Opto-electronic semi-conductor part has base on which is laid current expansion layer consisting of metal and metal oxide decreasing in concentration as it moves from side facing base to side turned away from it |
| CN101546789A (en) * | 2008-03-28 | 2009-09-30 | Jds尤尼弗思公司 | Semiconductor photodiode and method of manufacture thereof |
| CN102257641A (en) * | 2008-12-18 | 2011-11-23 | 阿尔卡特朗讯 | Avalanche photodiode |
| CN102254969A (en) * | 2011-08-17 | 2011-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nanopillar array-based photoelectric device and manufacturing method thereof |
| CN102612758A (en) * | 2010-06-03 | 2012-07-25 | 住友电气工业株式会社 | Semiconductor element, optical sensor device and semiconductor element manufacturing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720588B2 (en) * | 2001-11-28 | 2004-04-13 | Optonics, Inc. | Avalanche photodiode for photon counting applications and method thereof |
| CN103400872B (en) * | 2013-06-30 | 2015-08-26 | 北京工业大学 | Structure of the PIN photoelectric detector that surface field strengthens and preparation method thereof |
-
2015
- 2015-01-22 CN CN201510030904.3A patent/CN104617181B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005046190A1 (en) * | 2005-09-27 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Opto-electronic semi-conductor part has base on which is laid current expansion layer consisting of metal and metal oxide decreasing in concentration as it moves from side facing base to side turned away from it |
| CN101546789A (en) * | 2008-03-28 | 2009-09-30 | Jds尤尼弗思公司 | Semiconductor photodiode and method of manufacture thereof |
| CN102257641A (en) * | 2008-12-18 | 2011-11-23 | 阿尔卡特朗讯 | Avalanche photodiode |
| CN102612758A (en) * | 2010-06-03 | 2012-07-25 | 住友电气工业株式会社 | Semiconductor element, optical sensor device and semiconductor element manufacturing method |
| CN102254969A (en) * | 2011-08-17 | 2011-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nanopillar array-based photoelectric device and manufacturing method thereof |
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