CN207458973U - A kind of new snowslide diode photodetector - Google Patents
A kind of new snowslide diode photodetector Download PDFInfo
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- CN207458973U CN207458973U CN201721349222.XU CN201721349222U CN207458973U CN 207458973 U CN207458973 U CN 207458973U CN 201721349222 U CN201721349222 U CN 201721349222U CN 207458973 U CN207458973 U CN 207458973U
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Abstract
The utility model provides a kind of new snowslide diode photodetector, including N-type electrode, N-type heavily doped layer, single crystalline substrate, metal Multifunctional layered, InGaAs absorbed layers, InGaAs layers of p-type heavy doping and the P-type electrode stacked gradually from lower to upper.The new snowslide diode photodetector is applied widely, the controllable growth of new snowslide diode photodetector (APD) can be realized on a variety of substrates, multiple material may be employed in substrate, visible ray APD and infrared APD can be realized by replacing different substrates, advantageously reduce production cost；Single crystalline substrate has extraordinary perfection of lattice, it is easier to generate lattice collisions, inspire more avalanche electrons, improve the efficiency of APD；Structure is simpler, metal Multifunctional layered can play the role of epitaxial buffer layer, charge control, reflecting layer and reduction electronics and enter dynode layer potential barrier simultaneously, absorbed layer can not be absorbed complete light and is reflected into again in absorbed layer by reflecting layer, improve absorption efficiency.
Description
Technical field
The utility model is related to a kind of avalanche photodetectors, and in particular to a kind of avalanche diode with new structure
Photodetector.
Background technology
With the progress of society and science and technology, the mainstream that artificial intelligence and smart home have become social development becomes
Gesture, and the development of these technologies all be unable to do without advanced miscellaneous sensor.Photodetector, one as sensor
Most crucial unit receives the extensive concern of researcher.
Avalanche diode photodetector (APD) has many advantages, such as high internal gain, high-quantum efficiency, high sensitivity, is
One of photodetector of mainstream at present.However, the dynode layer in current APD is obtained by the method for extension mostly,
Its crystal quality also needs to further improve that (half-peak breadth of usual X-ray Rocking Curve is more than 150arcsec, remote
The 50arcsec prepared much larger than czochralski method), it can be only achieved ideal multiplication effect.In order to improve the device performance of APD,
Insertion InP charge controls and InGaAsP transition zones are generally required between absorbed layer InGaAs and InP.In addition, in order to obtain
The absorbed layer InGaAs of good quality also needs to first grow in InP substrate one layer thicker of InP buffer layers.
Therefore, in order to obtain high quality APD, simplify the structure of APD, improve the quality of absorbed layer InGaAs and dynode layer into
For researcher's striving direction.
Utility model content
In order to overcome the disadvantages mentioned above of the prior art and deficiency, the utility model provides a kind of simple in structure, dark current
Small new snowslide diode photodetector, it is suitable for the fields such as sensor, intelligent control, smart home product.
To achieve the above object, technical solution adopted in the utility model is：A kind of new snowslide diode photoelectricity is visited
Survey device, including stack gradually from lower to upper N-type electrode, N-type heavily doped layer, single crystalline substrate, metal Multifunctional layered, InGaAs inhale
Receive layer, InGaAs layers of p-type heavy doping and P-type electrode.
Preferably, the N-type heavily doped layer is to carry out ion implantation doping realization by the back side to single crystalline substrate.
Preferably, the material of the single crystalline substrate is Si, InP or InAlAs.
Preferably, the material of the metal Multifunctional layered is Al, Ag, Au or Ni.
Preferably, the N-type electrode, N-type heavily doped layer, single crystalline substrate, metal Multifunctional layered, InGaAs absorbed layers, p-type
The circumferential profile of InGaAs layers of heavy doping is equal.
Preferably, the thickness of the metal Multifunctional layered is 10-200nm, and the thickness of InGaAs absorbed layers is 1500-
3000nm, the thickness that InGaAs layers of p-type heavy doping are 150-300nm.
Wherein, the preparation method of the new snowslide diode photodetector, comprises the following steps：
1) single crystalline substrate is cleaned up using standard cleaning technique, removes substrate surface pickup particle and surface organic matter,
And it is dried using dryer；Wherein, single crystalline substrate can be the materials such as Si, InP, InAlAs；
2) using plasma enhancing chemical vapour deposition technique (PECVD), molecular beam epitaxy (MBE) or Organometallic
It is multi-functional in the metal of one layer of 10-200nm thickness of positive epitaxial growth of single crystalline substrate to close object chemical vapor infiltration (MOCVD)
Layer, wherein epitaxial growth temperature are 750-1150 DEG C, and wherein the material of metal Multifunctional layered can be the metals such as Al, Ag, Au, Ni；
3) using metallo-organic compound chemical vapor infiltration (MOCVD) in one layer of metal Multifunctional layered Epitaxial growth
The control of the InGaAs absorbed layers of 1500-3000nm thickness, wherein epitaxial growth temperature is 900-1200 DEG C；
4) one layer of 150-300nm of layer epitaxially grown is absorbed in InGaAs using metallo-organic compound chemical vapor infiltration
InGaAs layers thick of p-type heavy doping, wherein epitaxial growth temperature control are 900-1200 DEG C；
5) ion is uniformly injected into the back side of single crystalline substrate (i.e. substrate does not carry out the face of extension) using ion implantation apparatus, from
And N-type heavily doped layer is obtained at the back side of single crystalline substrate, dosage is 5 × 103/cm2-5×105/cm2, Implantation Energy 50-
150KeV, injection element are the pentads such as arsenic, phosphorus, antimony；It after ion implanting, is annealed using transient high temperature, it is complete to improve lattice
Property；
6) P-type electrode is deposited in InGaAs layers of p-type heavy doping；
7) N-type electrode is deposited on N-type heavily doped layer；
8) sliver, encapsulation, you can obtain new snowslide diode photodetector.
Preferably, in step 4), during InGaAs layers of p-type heavy doping of one layer of epitaxial growth, the element of doping is B or Si.
Preferably, the thickness of the metal Multifunctional layered is 10-200nm, and the thickness of InGaAs absorbed layers is 1500-
3000nm, the thickness that InGaAs layers of p-type heavy doping are 150-300nm.
New snowslide diode photodetector provided by the utility model can be applied in sensor, intelligent control product
In the product scopes such as smart home product.
Compared with prior art, the utility model has the following advantages and beneficial effect：
(1) the new snowslide diode photodetector of the utility model is applied widely, can be on a variety of substrates
Realize the controllable growth of new snowslide diode photodetector (APD), multiple material may be employed in substrate, including Si, InP,
InAlAs etc. can realize visible ray APD and infrared APD by replacing different substrates, advantageously reduce production cost；
(2) single crystalline substrate has extraordinary perfection of lattice, it is easier to generate lattice collisions, inspire more snowslides
Electronics improves the efficiency of APD；
(3) structure of new A PD is simpler, and metal Multifunctional layered can play epitaxial buffer layer, Charge controlled simultaneously
Layer, reflecting layer and reduction electronics enter the effect of dynode layer potential barrier, and absorbed layer can not be absorbed complete light by wherein reflecting layer
It is reflected into again in absorbed layer, improves absorption efficiency；When substrate is Si single crystalline substrates, and metal Multifunctional layered is Al, the two it
Between interface can form AlSi layers of 1-2nm, the potential barrier that electronics enters dynode layer can be significantly reduced.
Description of the drawings
Fig. 1 is the schematic cross-section of the new snowslide diode photodetector (APD) of the utility model.
Wherein, the title in figure corresponding to each mark is respectively：11-N type electrodes, 12-N type heavily doped layers, 13- monocrystalline
Substrate, 14- metal Multifunctional layereds, 15-InGaAs absorbed layers, InGaAs layers of 16-P type heavy doping, 17-P type electrodes.
Specific embodiment
With reference to embodiment, this utility model is described in further detail, but the implementation of this utility model
Mode is without being limited thereto.
With reference to Fig. 1, the new snowslide diode photodetector of the utility model includes the N-type stacked gradually from lower to upper
Electrode 11, N-type heavily doped layer 12, single crystalline substrate 13, metal Multifunctional layered 14, InGaAs absorbed layers 15, p-type heavy doping InGaAs
Layer 16 and P-type electrode 17.
N-type heavily doped layer 12 is to carry out ion implantation doping by the back side to single crystalline substrate 13 to realize, monocrystalline lining
The material at bottom 13 is Si, InP or InAlAs, and the material of metal Multifunctional layered 14 is Al, Ag, Au or Ni.
N-type electrode 11, N-type heavily doped layer 12, single crystalline substrate 13, metal Multifunctional layered 14, InGaAs absorbed layers 15, p-type
The circumferential profile of heavy doping InGaAs layers 16 is equal.Wherein, the thickness of metal Multifunctional layered 14 is 10-200nm, and InGaAs absorbs
The thickness of layer 15 is 1500-3000nm, and the thickness 16 that InGaAs layers of p-type heavy doping is 150-300nm.
Wherein, the preparation method of the new snowslide diode photodetector, comprises the following steps：
1) single crystalline substrate 13 is cleaned, 13 surface pickup particle of single crystalline substrate and surface organic matter is removed, and uses dryer
Drying；
2) using plasma enhancing chemical vapour deposition technique, molecular beam epitaxy or metallo-organic compound chemical gaseous phase
The precipitation method are in the metal Multifunctional layered 14 of one layer of 10-200nm thickness of positive epitaxial growth of single crystalline substrate 13, wherein epitaxial growth temperature
It spends for 750-1150 DEG C；
3) using metallo-organic compound chemical vapor infiltration in 14 Epitaxial growth of metal Multifunctional layered, one layer of 1500-
The control of the InGaAs absorbed layers 15 of 3000nm thickness, wherein epitaxial growth temperature is 900-1200 DEG C；
4) using metallo-organic compound chemical vapor infiltration in 15 Epitaxial growth of InGaAs absorbed layers, one layer of 150-
The control of the p-type heavy doping InGaAs layers 16 of 300nm thickness, wherein epitaxial growth temperature is 900-1200 DEG C；
5) ion is uniformly injected at the back side of single crystalline substrate 13 using ion implantation apparatus, so as at the back side of single crystalline substrate 13
N-type heavily doped layer 12 is obtained, dosage is 5 × 103/cm2-5×105/cm2, Implantation Energy 50-150KeV, injecting element is
The pentads such as arsenic, phosphorus, antimony；It after ion implanting, is annealed using transient high temperature, improves perfection of lattice；
6) P-type electrode 17 is deposited on p-type heavy doping InGaAs layers 16；
7) N-type electrode 11 is deposited on N-type heavily doped layer 12；
8) sliver, encapsulation, you can obtain new snowslide diode photodetector.
Embodiment 1
The schematic cross-section of the new snowslide diode photodetector of the present embodiment is as shown in Figure 1.The new snowslide two
Grade pipe photodetector includes the N electrode 11 stacked gradually from lower to upper, N-type heavily doped layer 12, single crystalline substrate 13, and (Si monocrystalline serves as a contrast
Bottom), metal Multifunctional layered 14 (Al Multifunctional layereds), InGaAs absorbed layers 15, p-type heavy doping InGaAs 16 and P-type electrode 17.
Wherein, the preparation method of the new snowslide diode photodetector (APD), comprises the following steps：
1) Si single crystalline substrates are cleaned up using standard cleaning technique, removes substrate surface pickup particle and surface is organic
Object, and dried using dryer；
2) using MOCVD in the metal Al Multifunctional layereds of one layer of 20nm thickness of positive epitaxial growth of Si single crystalline substrates, extension
Growth temperature is 750 DEG C；
3) using MOCVD in the InGaAs absorbed layers of one layer of 2000nm of metal Al Multifunctional layereds Epitaxial growth, growth temperature
Degree control is at 1050 DEG C；
4) using MOCVD in the p-type heavy doping InGaAs of one layer of 300nm of InGaAs absorbed layers Epitaxial growth, growth temperature
Degree control is at 1050 DEG C, doped chemical Si；
5) using ion implantation apparatus at the back side of single crystalline substrate, i.e. substrate does not carry out the face of extension, is uniformly injected into ion, from
And N-type heavily doped layer is obtained at the back side of single crystalline substrate, dosage is 9 × 103/cm2, Implantation Energy 100KeV, injecting element is
Phosphorus；It after ion implanting, is annealed using transient high temperature, improves perfection of lattice；
6) P-type electrode is deposited in InGaAs layers of p-type heavy doping；
7) N-type electrode is deposited on N-type heavily doped layer；
8) sliver, encapsulation, you can obtain the new snowslide diode photodetector of visible light wave range.
Dark current is 0.3nA at the avalanche voltage of preparation-obtained new A PD, can be by the new snowslide diode photoelectricity
Detector is applied in sensor, intelligent control product and smart home product.
Embodiment 2
The schematic cross-section of the new A PD of the present embodiment is as shown in Figure 1.New A PD includes stacking gradually from lower to upper
N electrode 11, N-type heavily doped layer 12, single crystalline substrate 13 (InP single crystalline substrates), metal Multifunctional layered 14 (Au Multifunctional layereds),
InGaAs absorbed layers 15, p-type heavy doping InGaAs 16 and P-type electrode 17.
Wherein, the preparation method of the new snowslide diode photodetector, comprises the following steps：
1) InP single crystalline substrates are cleaned up using standard cleaning technique, removes substrate surface pickup particle and surface is organic
Object, and dried using dryer；
2) using MOCVD in the metal Au Multifunctional layereds of one layer of 20nm thickness of positive epitaxial growth of InP single crystalline substrates, extension
Growth temperature is 750 DEG C；
3) using MOCVD in the InGaAs absorbed layers of one layer of 2000nm of metal Au Multifunctional layereds Epitaxial growth, growth temperature
Degree control is at 1050 DEG C；
4) using MOCVD in the p-type heavy doping InGaAs of one layer of 300nm of InGaAs absorbed layers Epitaxial growth, growth temperature
Degree control is at 1050 DEG C, doped chemical Si；
5) using ion implantation apparatus at the back side of single crystalline substrate, i.e. substrate does not carry out the face of extension, is uniformly injected into ion, from
And N-type heavily doped layer is obtained at the back side of single crystalline substrate, dosage is 9 × 103/cm2, Implantation Energy 100KeV, injecting element is
Phosphorus；It after ion implanting, is annealed using transient high temperature, improves perfection of lattice；
6) P-type electrode is deposited in InGaAs layers of p-type heavy doping；
7) N-type electrode is deposited on N-type heavily doped layer；
8) sliver, encapsulation, you can obtain the new snowslide diode photodetector of infrared band.
Dark current is 0.3nA at the avalanche voltage of preparation-obtained new A PD, can be by the new snowslide diode photoelectricity
Detector is applied in sensor, intelligent control product and smart home product.
Embodiment 3
The schematic cross-section of the new A PD of the present embodiment is as shown in Figure 1.New A PD includes stacking gradually from lower to upper
N electrode 11, N-type heavily doped layer 12, single crystalline substrate 13 (InAlAs single crystalline substrates), (Ag is multi-functional for metal Multifunctional layered 14
Layer), InGaAs absorbed layers 15, p-type heavy doping InGaAs 16 and P-type electrode 17.
Wherein, the preparation method of the new snowslide diode photodetector, comprises the following steps：
1) InAlAs single crystalline substrates are cleaned up using standard cleaning technique, removing substrate surface pickup particle and surface has
Machine object, and dried using dryer；
2) using PECVD one layer of 50nm thickness of positive epitaxial growth of InAlAs single crystalline substrates metal Ag Multifunctional layereds,
Epitaxial growth temperature is 1000 DEG C；
3) using MOCVD in the InGaAs absorbed layers of one layer of 1500nm of metal Ag Multifunctional layereds Epitaxial growth, growth temperature
Degree control is at 1000 DEG C；
4) using MOCVD in the p-type heavy doping InGaAs of one layer of 200nm of InGaAs absorbed layers Epitaxial growth, growth temperature
Degree control is at 900 DEG C, doped chemical B；
5) using ion implantation apparatus at the back side of single crystalline substrate, i.e. substrate does not carry out the face of extension, is uniformly injected into ion, from
And N-type heavily doped layer is obtained at the back side of single crystalline substrate, dosage is 1 × 104/cm2, Implantation Energy 120KeV, injecting element is
Phosphorus；It after ion implanting, is annealed using transient high temperature, improves perfection of lattice；
6) P-type electrode is deposited in InGaAs layers of p-type heavy doping；
7) N-type electrode is deposited on N-type heavily doped layer；
8) sliver, encapsulation, you can obtain the new snowslide diode photodetector of 850nm, 980nm, 1130nm wave band.
Dark current is 0.25nA at the avalanche voltage of preparation-obtained new A PD, can be by the new snowslide diode light
Electric explorer is applied in sensor, intelligent control product and smart home product.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiment of the utility model and from described
The limitation of embodiment, the change made under other any Spirit Essences and principle without departing from the utility model are modified, replaced
Generation, combination simplify, and should be equivalent substitute mode, are included within the scope of protection of the utility model.
Claims (6)
1. a kind of new snowslide diode photodetector, which is characterized in that including stack gradually from lower to upper N-type electrode, N
Type heavily doped layer, single crystalline substrate, metal Multifunctional layered, InGaAs absorbed layers, InGaAs layers of p-type heavy doping and P-type electrode.
2. new snowslide diode photodetector according to claim 1, which is characterized in that the N-type heavily doped layer
It is that ion implantation doping realization is carried out by the back side to single crystalline substrate.
3. new snowslide diode photodetector according to claim 1, which is characterized in that the material of the single crystalline substrate
Material is Si, InP or InAlAs.
4. new snowslide diode photodetector according to claim 1, which is characterized in that the metal Multifunctional layered
Material be Al, Ag, Au or Ni.
5. new snowslide diode photodetector according to claim 1, which is characterized in that the N-type electrode, N-type
Heavily doped layer, single crystalline substrate, metal Multifunctional layered, InGaAs absorbed layers and the circumferential profile of InGaAs layers of p-type heavy doping are equal.
6. new snowslide diode photodetector according to claim 1, which is characterized in that the metal Multifunctional layered
Thickness be 10-200nm, the thickness of InGaAs absorbed layers is 1500-3000nm, and the thickness that InGaAs layers of p-type heavy doping is
150-300nm。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107644921A (en) * | 2017-10-18 | 2018-01-30 | 五邑大学 | A kind of new snowslide diode photodetector and preparation method thereof |
| CN114373821A (en) * | 2022-01-11 | 2022-04-19 | 中国科学院重庆绿色智能技术研究院 | Class II superlattice infrared detector with broadband absorption enhancement structure and preparation method thereof |
-
2017
- 2017-10-18 CN CN201721349222.XU patent/CN207458973U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107644921A (en) * | 2017-10-18 | 2018-01-30 | 五邑大学 | A kind of new snowslide diode photodetector and preparation method thereof |
| CN107644921B (en) * | 2017-10-18 | 2023-08-29 | 五邑大学 | Novel avalanche diode photoelectric detector and preparation method thereof |
| CN114373821A (en) * | 2022-01-11 | 2022-04-19 | 中国科学院重庆绿色智能技术研究院 | Class II superlattice infrared detector with broadband absorption enhancement structure and preparation method thereof |
| CN114373821B (en) * | 2022-01-11 | 2023-08-22 | 中国科学院重庆绿色智能技术研究院 | Class II superlattice infrared detector with broadband absorption enhancement structure and preparation method thereof |
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