CN109742187A - A kind of more piece method for manufacturing solar battery - Google Patents

A kind of more piece method for manufacturing solar battery Download PDF

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Publication number
CN109742187A
CN109742187A CN201811638451.2A CN201811638451A CN109742187A CN 109742187 A CN109742187 A CN 109742187A CN 201811638451 A CN201811638451 A CN 201811638451A CN 109742187 A CN109742187 A CN 109742187A
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layer
solar battery
heavy doping
manufacturing solar
piece method
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CN109742187B (en
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陈意桥
张国祯
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Suzhou Kun Original Photoelectric Co Ltd
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Suzhou Kun Original Photoelectric Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention belongs to electronic component manufacturing technology fields, it is related to a kind of more piece method for manufacturing solar battery, step includes that InP substrate will be packed into the growth room of MBE system, the oxide layer of heating removal substrate surface remnants, then buffer layer, hearth electrode, light absorbing layer, top layer section, emitter and top electrode are sequentially formed, wherein the forbidden bandwidth of light absorbing layer is incremented by successively from lower to upper.The light absorpting ability of different-waveband sunlight can be greatly enhanced using the light absorbing layer of content gradually variational by the present invention, which can achieve very high incident photon-to-electron conversion efficiency.

Description

A kind of more piece method for manufacturing solar battery
Technical field
The present invention relates to electronic component manufacturing technology field, in particular to a kind of more piece method for manufacturing solar battery.
Background technique
Representative of the solar battery as renewable energy is widely paid close attention to by people.Current commercialized monocrystalline silicon, Polysilicon, thin-film solar cells mostly use greatly single P-N section structure, can only absorb and conversion solar energy spectrum compose entirely in it is one small Part, therefore photoelectric conversion efficiency is not generally high (being lower than 30%).In order to further increase battery efficiency, we can will pay attention to Power is transferred on more piece solar battery.More piece solar battery, as its name suggests, battery structure sets gradually band gap from top to bottom The light absorbing layer of gradual change from big to small, to realize the successively absorption for growing to long wavelength from shortwave to solar spectrum, and then substantially Degree improves photoelectric conversion efficiency.
More piece solar battery is usually made of hearth electrode, the light absorbing layer of content gradually variational, emitter layer, top electrode.This Several layer materials are usually deposited on substrate surface by way of epitaxial growth.It is required that each layer must all lose with substrate lattice constant With degree < 10%.On this basis, every layer material will also have sufficient freedom degree to adjust the forbidden bandwidth of itself.It is basic herein On, the carrier type and carrier concentration of every layer film are determined by suitably adulterating.Meet these requirements, usually The material of three components and four components is selected, because one-component and bicomponent film composition regulation freedom degree are too small.This just gives material Growth brings certain difficulty, because of especially four component materials, film growth is limited by immiscible gap.
Summary of the invention
The main purpose of the present invention is to provide a kind of more piece method for manufacturing solar battery, make solar battery to difference Wave band sunlight has good light absorpting ability, improves photoelectric conversion efficiency.
The present invention is achieved through the following technical solutions above-mentioned purpose: a kind of more piece method for manufacturing solar battery, step packet It includes:
1. InP substrate to be packed into the growth room of MBE system, it is desirable that vacuum degree is better than 1 × 10-6torr；
2. heating substrate to 500~700 DEG C, to remove the oxide layer of substrate surface remnants；
3. reducing by 10~200 DEG C on the basis of deoxidation temperature, the buffer layer of one layer with InP substrate Lattice Matching is grown；
4. preparing the InGaAs layer of heavy doping as hearth electrode；
5. being sequentially prepared the light absorbing layer of the n-layer of tetra- component of InGaAsP, the group of n-th layer is divided into AlxnGa1-xnAsynP1-yn, xnWith ynMeet following relationship,
0.53<x1<x2<…<xn, 1 > y1>y2>…>yn；
6. preparing AlxGa1-xAsyP1-yThe top layer section of material；
7. preparing AlxGa1-xAsyP1-yThe emitter of material；
8. preparing the In of heavy doping0.53Ga0.47As material, as top electrode；
9. after deposition growing, doing top electrode respectively in epitaxial wafer front and back, rapid thermal annealing forms ohm and connects Touching.
Specifically, the cushioning layer material is In0.53Ga0.47As or In0.52Al0.48As。
Specifically, the hearth electrode, light absorbing layer, top layer section and absorbed layer are the N-type layer of Si heavy doping, emitter and top Electrode is the P-type layer of Be heavy doping.
Specifically, the hearth electrode, light absorbing layer, top layer section and absorbed layer are the P-type layer of Be heavy doping, emitter and top Electrode is the N-type layer of Si heavy doping.
Further, the group of the step 6. AlGaAsSb material with step 7. is divided into AlxGa1-xAsySb1-y, x and y are full The following relationship of foot,
xTop>xHair>0.6。
Further, the AlGaAsSb material is grown using class superlattices method.
Specifically, the top electrode is the In of Be heavy doping0.53Ga0.47As material.
By adopting the above technical scheme, the beneficial effect of technical solution of the present invention is:
The light absorption energy of different-waveband sunlight can be greatly enhanced using the N-type light absorbing layer of content gradually variational by the present invention Power, the structure solar battery can achieve very high incident photon-to-electron conversion efficiency.
Specific embodiment
Invention is further described in detail combined with specific embodiments below.
Embodiment 1:
1. InP substrate to be packed into the growth room of MBE system, it is desirable that vacuum degree is better than 1 × 10-6torr；
2. heating substrate to 500~700 DEG C, to remove the oxide layer of substrate surface remnants；
3. reducing by 10~200 DEG C on the basis of deoxidation temperature, one layer of buffer layer is grown；
4. selecting Si as doped source, the N-type hearth electrode of the InGaAs of heavy doping is prepared；
5. being gradually increased the line of In, the line of As is reduced, reduces the line of Si, is sequentially prepared the n of tetra- component of InGaAsP The N-type light absorbing layer of layer；
6. selection Si is doped source, Al is preparedxNGa1-xNAsyNP1-yNThe N-type top layer section of material；
7. increasing the line of Al, the line of As is reduced, selects Be as doped source, prepares AlxPGa1-xPAsyPP1-yPMaterial Emitter；
8. selecting Be as heavy-doped source, with the InGaAs material of heavy doping, as p-type top electrode；
9. after deposition growing, doing top electrode respectively in epitaxial wafer front and back, rapid thermal annealing forms ohm and connects Touching.
The structure that above manufacturing method is formed from InP substrate from the bottom to top successively are as follows:
1) buffer layer: purpose is that the InP substrate after deoxidation is surface flattening, is that the growth of subsequent film is prepared.It wants The layer is asked to match with InP lattice constant, we select the In of three components0.53Ga0.47As or In0.52Al0.48As is as buffer layer.
2) N-type hearth electrode: the In of Si heavy doping0.53Ga0.47As material makees the bottom contact layer of battery, realizes bottom carrier Injection.
3) N-type light absorbing layer: the Al of Si heavy dopingxnGa1-xnAsynP1-ynMaterial, it is desirable that forbidden bandwidth is from lower to upper successively It is incremented by, and lattice constant will also keep consistent with InP.
0.53<x1<x2<...<xn, 1>y1>y2>...>yn.
xnWith ynBetween meet relationship:
4) N-type top layer section: the Al of Si heavy dopingxNGa1-xNAsyNSb1-yNMaterial, it is desirable that its forbidden bandwidth is greater than 1.6eV, It is exactly Al component xTop>0.6。
It is required that its lattice constant is consistent with InP, therefore x and y meet following relationship,
5) p-type emitter: the Al of Be heavy dopingxPGa1-xPAsyPSb1-yPMaterial is the p type island region of solar battery.
X and y meet following relationship,
For N-type light absorbing layer and p-type emitter, it is desirable that matched with InP lattice constant, the forbidden bandwidth of p-type emitter xPIt is greater than the forbidden bandwidth x of N-type light absorbing layerN, therefore Al component xHair>xTop>0.6。
N-type light absorbing layer and p-type emitter all use class superlattices method to grow, to overcome the immiscible gap of four component materials Limitation.It is specifically divided into two schemes:
The first: design AlxGa1-xAs is with a thickness of d1, AlxGa1-xSb is a cycle with a thickness of d2, d1+d2, passes through tune The value for saving d1 and d2, can be with the component of accuracy controlling As and Sb.
Second: design AlAsySb1-yWith a thickness of d1, GaAsySb1-yIt is a cycle with a thickness of d2, d1+d2, passes through tune The value for saving d1 and d2, can be with the component of accuracy controlling Al and Ga.
Both schemes effectively prevent the competition during Material growth between As and Sb or Al and Ga, and thoroughly Solve limitation of the immiscible gap to Material growth.
6) p-type top electrode: the In of Be heavy doping0.52Ga0.48As material realizes top cavity as the contact layer of p type island region Injection.
Embodiment 2:
Difference from example 1 is that: hearth electrode, light absorbing layer, top layer section and absorbed layer are the p-type of Be heavy doping Layer, emitter and top electrode are the N-type layer of Si heavy doping.
The light absorpting ability of different-waveband sunlight can be greatly enhanced using the light absorbing layer of content gradually variational by the present invention, By taking three section light absorbing layers as an example, which can achieve the incident photon-to-electron conversion efficiency more than 40%.Joint number is higher, reason It is higher by upper incident photon-to-electron conversion efficiency.
Above-described is only some embodiments of the present invention.For those of ordinary skill in the art, not Under the premise of being detached from the invention design, various modifications and improvements can be made, these belong to protection model of the invention It encloses.

Claims (6)

1. a kind of more piece method for manufacturing solar battery, it is characterised in that step includes:
1. InP substrate to be packed into the growth room of MBE system, it is desirable that vacuum degree is better than 1 × 10-6torr；
2. heating substrate to 500~700 DEG C, to remove the oxide layer of substrate surface remnants；
3. reducing by 10~200 DEG C on the basis of deoxidation temperature, the buffer layer of one layer with InP substrate Lattice Matching is grown；
4. preparing the InGaAs layer of heavy doping as hearth electrode；
5. being sequentially prepared the light absorbing layer of the n-layer of tetra- component of InGaAsP, the group of n-th layer is divided into AlxnGa1-xnAsynP1-yn, xnWith yn Meet following relationship,
0.53<x1<x2<…<xn, 1 > y1>y2>…>yn；
6. preparing AlxGa1-xAsyP1-yThe top layer section of material；
7. preparing AlxGa1-xAsyP1-yThe emitter of material；
8. preparing the In of heavy doping0.53Ga0.47As material, as top electrode；
9. after deposition growing, doing top electrode respectively in epitaxial wafer front and back, rapid thermal annealing forms Ohmic contact.
2. more piece method for manufacturing solar battery according to claim 1, it is characterised in that: the cushioning layer material is In0.53Ga0.47As or In0.52Al0.48As。
3. more piece method for manufacturing solar battery according to claim 1, it is characterised in that: the hearth electrode, light absorption Layer, top layer section and absorbed layer are the N-type layer of Si heavy doping, and emitter and top electrode are the P-type layer of Be heavy doping.
4. more piece method for manufacturing solar battery according to claim 1, it is characterised in that: the hearth electrode, light absorption Layer, top layer section and absorbed layer are the P-type layer of Be heavy doping, and emitter and top electrode are the N-type layer of Si heavy doping.
5. more piece method for manufacturing solar battery according to claim 3 or 4, it is characterised in that: the step 6. and step Suddenly the group of AlGaAsSb material 7. is divided into AlxGa1-xAsySb1-y, x and y be all satisfied following relationship,
xHair>xTop>0.6。
6. more piece method for manufacturing solar battery according to claim 5, it is characterised in that: the AlGaAsSb material is adopted It is grown with class superlattices method.
CN201811638451.2A 2018-12-29 2018-12-29 Method for manufacturing multi-section solar cell Active CN109742187B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112086560A (en) * 2020-08-24 2020-12-15 隆基绿能科技股份有限公司 Laminated battery and preparation method thereof
CN112234437A (en) * 2020-10-30 2021-01-15 电子科技大学 Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086135A (en) * 2003-09-11 2005-03-31 Nippon Telegr & Teleph Corp <Ntt> Epitaxial wafer for hetero bipolar transistor and its manufacturing method
CN102646703A (en) * 2012-05-07 2012-08-22 中国电子科技集团公司第五十五研究所 Epitaxial structure of single crystal indium phosphide (InP) group compound semiconductor film
CN104034072A (en) * 2013-03-08 2014-09-10 中国建筑材料科学研究总院 Solar spectrum selective absorbing coating, preparation method and application thereof
US20150162469A1 (en) * 2009-09-11 2015-06-11 Rosestreet Labs Energy, Inc. Dilute group iii-v nitride intermediate band solar cells with contact blocking layers
US20170062642A1 (en) * 2013-04-29 2017-03-02 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086135A (en) * 2003-09-11 2005-03-31 Nippon Telegr & Teleph Corp <Ntt> Epitaxial wafer for hetero bipolar transistor and its manufacturing method
US20150162469A1 (en) * 2009-09-11 2015-06-11 Rosestreet Labs Energy, Inc. Dilute group iii-v nitride intermediate band solar cells with contact blocking layers
CN102646703A (en) * 2012-05-07 2012-08-22 中国电子科技集团公司第五十五研究所 Epitaxial structure of single crystal indium phosphide (InP) group compound semiconductor film
CN104034072A (en) * 2013-03-08 2014-09-10 中国建筑材料科学研究总院 Solar spectrum selective absorbing coating, preparation method and application thereof
US20170062642A1 (en) * 2013-04-29 2017-03-02 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
鲁麟 等: "In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究", 《发光学报》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112086560A (en) * 2020-08-24 2020-12-15 隆基绿能科技股份有限公司 Laminated battery and preparation method thereof
CN112086560B (en) * 2020-08-24 2023-11-03 隆基绿能科技股份有限公司 Laminated battery and preparation method thereof
CN112234437A (en) * 2020-10-30 2021-01-15 电子科技大学 Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof

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