CN102646703A - Epitaxial structure of single crystal indium phosphide (InP) group compound semiconductor film - Google Patents

Epitaxial structure of single crystal indium phosphide (InP) group compound semiconductor film Download PDF

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CN102646703A
CN102646703A CN2012101378297A CN201210137829A CN102646703A CN 102646703 A CN102646703 A CN 102646703A CN 2012101378297 A CN2012101378297 A CN 2012101378297A CN 201210137829 A CN201210137829 A CN 201210137829A CN 102646703 A CN102646703 A CN 102646703A
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inp
layer
doping
base
epitaxial structure
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CN102646703B (en
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高汉超
尹志军
程伟
李忠辉
朱志明
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CETC 55 Research Institute
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Abstract

The invention relates to an epitaxial structure of single crystal InP group compound semiconductor film. The epitaxial structure is grown on a single crystal InP substrate, and an InP buffer layer is grown on the semi-insulating single crystal InP substrate; a heavy n-type doped InP sub-collector layer is grown on the InP buffer layer; a light n-type doped InP collector layer is grown on the heavy n-type doped InP sub-collector layer; a heavy p-type doped GaAasSb base layer is grown on the light n-type doped InP collector layer; an n-type doped GaAasSb/ InP super-lattice transition layer is grown on the GaAsSb base layer; an n-type InP emitting electrode is grown on the super-lattice structure layer; and a heavily doped n-type InP contact layer is grown on the InP emitting electrode. The epitaxial structure has the advantages that the material structure design is simplified; the super-lattice structure is utilized from one side of the wide band-gap emitting electrode, so that smooth transition of energy bands to one side of the base can be achieved, conduction band barrier peaks of the emitting electrode base are eliminated, and smooth transition of electrons to the base is achieved; the band structure of II type eliminates the conduction band barrier peaks between the base and collector.

Description

The epitaxial structure of monocrystalline InP based compound semiconductor material film
Technical field
What the present invention relates to is a kind of epitaxial structure of monocrystalline InP based compound semiconductor material film, belongs to the growth technology field of containing superlattice transition zone semiconductor single crystal thin film.
Background technology
At present, heterojunction bipolar transistor at a high speed mainly contains two kinds of SiGe material system and InP material systems, compare with SiGe material system, InP heterojunction bipolar transistor, collector region velocity of electrons is than being 3.5:1, base stage electrons spread speed ratio is 10:1, so InP base DHBT has higher cut-off frequency.InP heterojunction bipolar transistor mainly comprises bi-material system, that is: the GaAsSb/InP HBT structure that the InGaAs/InP DHBT that InGaAs is base and GaAsSb are base.Compare the band structure that GaAsSb/InP is II type with InGaAs/InP, the conduction band of GaAsSb is positioned on InP conduction band, therefore between base and collector region, does not have potential barrier, has overcome electronics blocking effect, the collector electrode that electronics can directly inject.Compare with the DHBT of InGaAs/InP structure, GaAsSb/InP structure has been simplified device design complexity and Material growth difficulty greatly.But, the DHBT structure that the GaAsSb material of take is base, band structure due to II type, at emitter and base stage, there is conduction band barrier spike, therefore limit electronics transporting from emitter to base stage, reduced cut-off frequency and maximum vibration frequency that conduction band barrier between emitter and base stage contributes to improve device.By using InAlAs can improve emitter performance as emitter, because the heterogeneous band structure of becoming I type of InAlAs/GaAsSb, electronics can be directly injected into base stage and not needed to overcome conduction band barrier by emitter.Yet it is much lower that the electron mobility of InAlAs is compared with InP, the direct result of the reduction of mobility is to have increased emitter resistance, has limited the raising of device cut-off frequency;
Therefore, design growth mobility is high, and the emitter that there is no conduction band barrier spike, on the one hand: adopt the InP material with high mobility as emitter, can effectively improve emitter resistance, on the other hand: adopt suitable emitter base transition zone design, eliminate the conduction band barrier spike of emitter base, make electronics by emitter, be transported to base stage smoothly.
Summary of the invention
What the present invention proposed is a kind of epitaxial structure of monocrystalline InP based compound semiconductor material film, its objective is to overcome between GaAsSb/InP DHBT emitter base and exist and affect the transport issues of electronics from emitter to base stage compared with large potential barrier conduction band spike, enable band by emitter wide bandgap material InP, be smoothly transitted into base stage narrow band gap GaAsSb layer, eliminate emitter base conduction band barrier spike; If the InP emitter of broad stopband GaAsSb direct and low energy gap can form conduction band barrier spike, by introducing superlattice transition zone, can enable band and be smoothly transitted into base stage by emitter.According to superlattice design growing principle, the width of quantum well has determined superlattice band gap, that is: the narrower superlattice band gap of quantum well is wider, the wider superlattice of quantum well
Band gap is narrower.
Technical solution of the present invention is: its structure is on semi-insulating single crystal InP substrate, to be one deck InP resilient coating; It on InP resilient coating, is time collector layer; On inferior collector layer, it is collector layer; It on collector layer, is base layer; It in base layer, is superlattice transition zone; It in super lattice structure layers, is emitter; It on emitter, is contact layer;
Its growing method, comprises the following steps:
The first step is at semi-insulating single crystal InP substrate growth one deck InP resilient coating;
Second step is grown the heavy N-shaped doping of one deck InP as inferior collector layer on InP resilient coating;
The 3rd step is grown light N-shaped doping InP as collector layer on InP collector layer of heavy N-shaped doping;
The 4th step is the heavy p-type Doped GaAs of growth Sb base stage on light N-shaped doping InP collector electrode;
The GaAsSb/InP superlattice transition zone of the 5th step growing n-type doping in GaAsSb base layer;
The 6th step in super lattice structure layers growing n-type InP as emitter;
The 7th step is grown heavy doping N-shaped InP as contact layer on InP emitter.
Described resilient coating 2 is InP, and thickness is 200 ~ 300nm.
The thickness of described InP collector layer 3 of heavy N-shaped doping is 200 ~ 300nm, and doping content is 1 ~ 3E19cm 3.
Described N-shaped light dope InP collector layer 4 thickness are 200 ~ 300nm, and doping content is 1 ~ 3E16cm 3, temperature is any one temperature within the scope of 400 ~ 600 ℃.
Described heavy p-type Doped GaAs Sb base stage 5 thickness are 30 ~ 60nm, and GaAsSb component is 0.4 ~ 0.6 arbitrary value, doping content 4 ~ 8E19cm 3, growth temperature is any one temperature within the scope of 350 ~ 550 ℃.
Described superlattice transition zone is GaAsSb/InP superlattice 6, periodicity 10 ~ 40 any periods of superlattice, and Superlattice band is gradual to emitter by base, gross thickness 20 ~ 60nm.
Described emitter 7 is N-shaped InP, and InP thickness is 30 ~ 70nm, and doping content is 1 ~ 4E17cm -3.
Described heavy doping N-shaped InP contact layer 8, thickness is 100 ~ 300nm, doping content is 1 ~ 4E19cm -3.
The present invention has the following advantages: 1) GaAsSb/InP DHBT has simplified design on material structure; 2) from broad-band gap InP emitter one side, adopt superlattice structure can enable band and be smoothly transitted into base stage one side, eliminated emitter base conduction band barrier spike, be that electronics is smoothly transitted into base stage; 3) band structure of II type, has eliminated the conduction band barrier spike between base collector.
Accompanying drawing explanation
Accompanying drawing 1 is the epitaxial structure of GaAsSb base DHBT film of the present invention and the principle schematic of growing method.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
GaAsSb base DHBT epitaxial structure and a growing method, is characterized in that it comprises the following steps:
The first step is at semi-insulating single crystal InP substrate 1 growth one deck InP resilient coating 2;
Second step is grown the heavy N-shaped doping of one deck InP as inferior collector electrode 3 on InP resilient coating 2;
The 3rd step is grown light N-shaped doping InP as collector electrode 4 on InP collector layer 3 of heavy N-shaped doping;
The 4th step heavy p-type Doped GaAs Sb base stage 5 of growing on light N-shaped doping InP collector layer 4;
The GaAsSb/InP superlattice transition zone 6 of the 5th step growing n-type doping in GaAsSb base layer 5;
The 6th step in super lattice structure layers 6 growing n-type InP as emitter 7;
The 7th step is grown heavy doping N-shaped InP as contact layer 8 on InP emitter 7.
The structural representation of GaAsSb base DHBT monocrystal thin films of the present invention is as Fig. 1.
Below in conjunction with concrete application examples, the present invention is further illustrated.
Embodiment 1:
1) select semi-insulating single crystal InP substrate, utilize MBE technology growth;
2) before growth, substrate is heated to 300 ℃, toasts 30 minutes;
3) substrate is put into growth chamber, under P atmosphere protection, be warming up to 540 ℃, oxide film dissolving;
4) be cooled to 500 ℃, open the thick InP resilient coating of In shutter growth 200nm;
5) open InP collector electrode 200nm of Si shutter grow doping, collector electrode 200nm;
6) being cooled to the GaAsSb base thickness that 450 ℃ of growth Sb components are 0.5 is 50nm, C doping;
7) growth GaAsSb/InP superlattice structure, gross thickness 30nm, superlattice period is 30;
8) be warming up to InP emitter 50nm and the contact layer 300nm of 500 ℃ of growth Si doping;
9) be down to room temperature.
Embodiment 2:
1) select semi-insulating single crystal InP substrate, utilize MBE technology growth;
2) before growth, substrate is heated to 300 ℃, toasts 30 minutes;
3) substrate is put into growth chamber, under P atmosphere protection, be warming up to 540 ℃, oxide film dissolving;
4) be cooled to 500 ℃, open the thick InP resilient coating of In shutter growth 300nm;
5) open InP collector electrode 200nm of Si shutter grow doping, collector electrode 200nm;
6) being cooled to the GaAsSb base thickness that 400 ℃ of growth Sb components are 0.4 is 30nm, C doping;
7) be warming up to 450 ℃, growth GaAsSb/InP superlattice structure, gross thickness 30nm, superlattice period is 40;
8) be warming up to InP emitter 50nm and the contact layer 200nm of 500 ℃ of growth Si doping;
9) be down to room temperature.
Superlattice in this method are GaAsSb/InP material, superlattice period is that thickness is 1 ~ 3nm, near InP emitter one side, narrow quantum well thickness 0.3 ~ 1nm grows, the thickness of potential barrier is 2 ~ 4nm, quantum well width is transitioned into base stage GaAsSb mono-side by InP emitter one side line, and superlattice gross thickness is controlled at 20 ~ 40nm.If do not consider quantum tunneling effect, quantum well ground state level will be from emitter InP mono-side phase step type gradual change to GaAsSb base stage one side, but due to ultra-thin barrier layer thickness, electronics will be satisfied break-through and be crossed potential barrier, make the energy level between each quantum well produce overlapping, form new gradual band structure, by the mild gradual change of emitter one side to base stage.The GaAsSb/InP DHBT material structure of growth, has not only retained the very high electron mobility of InP material like this, has reduced emitter resistance, has overcome the conduction band barrier spike of emitter one side simultaneously, makes electronics can be transported to smoothly base stage.According to said method, not only go for GaAsSb/InP DHBT Material growth but also be applicable to InGaAs/InP DHBT Material growth.
Thin film epitaxy method involved in the present invention can be utilized MOCVD(metal organic-matter chemical gas deposition), MBE(molecular beam epitaxy), UHVCVD(high vacuum chemical gas deposition) homepitaxy growing technology realizes.

Claims (8)

1. the epitaxial structure of monocrystalline InP Grown InP based compound semiconductor material film, is characterized in that on semi-insulating single crystal InP substrate (1) it being one deck InP resilient coating (2); It on InP resilient coating (2), is time collector layer (3); On inferior collector layer (3), be collector layer (4); On collector layer (4), be base layer (5); In base layer (5), be superlattice transition zone (6); In super lattice structure layers (6), be emitter (7); On emitter (7), be contact layer (8);
Its growing method, comprises the following steps:
The first step is at semi-insulating single crystal InP substrate (1) growth one deck InP resilient coating (2);
Second step is at the heavy N-shaped doping of the upper growth of InP resilient coating (2) one deck InP collector layer (3);
The 3rd step is at the light N-shaped doping of the upper growth of heavy N-shaped InP collector layer of doping (3) InP collector layer (4);
The 4th step is in the heavy p-type Doped GaAs Sb base layer (5) of the upper growth of light N-shaped doping InP collector layer (4);
The 5th step is at the GaAsSb/InP superlattice transition zone (6) of the upper growing n-type doping of GaAsSb base layer (5);
The 6th step is at the upper growing n-type InP emitter (7) of super lattice structure layers (6);
The 7th step is at the upper growth of InP emitter (7) heavy doping N-shaped InP contact layer (8).
2. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, is characterized in that described InP resilient coating (2) is grown in the surface of semi-insulating single crystal InP substrate (1), and the thickness of InP resilient coating (2) is 200 ~ 300nm.
3. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, is characterized in that the thickness of described heavy N-shaped InP collector layer of doping (3) is 200 ~ 300nm, and doping content is 1 ~ 3E19cm 3.
4. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, is characterized in that described N-shaped light dope InP collector layer (4) thickness is 200 ~ 300nm, and doping content is 1 ~ 3E16cm 3, temperature is 400 ~ 600 ℃.
5. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, is characterized in that described heavy p-type Doped GaAs Sb base stage (5) thickness is 30 ~ 60nm, and GaAsSb component is 0.4 ~ 0.6, doping content 4 ~ 8E19cm 3, growth temperature is 350 ~ 550 ℃.
6. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, it is characterized in that described superlattice transition zone (6) is GaAsSb/InP superlattice, the periodicity 10 ~ 40 of superlattice, Superlattice band is gradual to emitter by base, superlattice gross thickness 20 ~ 60nm.
7. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, is characterized in that the thickness of described InP emitter (7) is 30 ~ 70nm, and doping content is 1 ~ 4E17cm -3.
8. the epitaxial structure of monocrystalline InP based compound semiconductor material film according to claim 1, is characterized in that the thickness of described heavy doping N-shaped InP contact layer (8) is 100 ~ 300nm, and doping content is 1 ~ 4E19cm -3.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742187A (en) * 2018-12-29 2019-05-10 苏州焜原光电有限公司 A kind of more piece method for manufacturing solar battery
CN113644150A (en) * 2021-07-22 2021-11-12 中山大学 High-gain photoelectric detector
CN114232085A (en) * 2021-12-06 2022-03-25 中国电子科技集团公司第五十五研究所 Method for epitaxially growing InGaAs on InP substrate
WO2023000272A1 (en) * 2021-07-22 2023-01-26 中山大学 High-gain photoelectric detector

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EP0177374A2 (en) * 1984-08-30 1986-04-09 Fujitsu Limited High-speed semiconductor device
US4963949A (en) * 1988-09-30 1990-10-16 The United States Of America As Represented Of The United States Department Of Energy Substrate structures for InP-based devices
JPH0536715A (en) * 1991-08-01 1993-02-12 Furukawa Electric Co Ltd:The Heterojunction bipolar transistor
US5349201A (en) * 1992-05-28 1994-09-20 Hughes Aircraft Company NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate
WO2001009957A1 (en) * 1999-07-30 2001-02-08 Hrl Laboratories, Llc Inp collector ingaassb base dhbt device and method of forming the same
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742187A (en) * 2018-12-29 2019-05-10 苏州焜原光电有限公司 A kind of more piece method for manufacturing solar battery
CN113644150A (en) * 2021-07-22 2021-11-12 中山大学 High-gain photoelectric detector
WO2023000272A1 (en) * 2021-07-22 2023-01-26 中山大学 High-gain photoelectric detector
CN114232085A (en) * 2021-12-06 2022-03-25 中国电子科技集团公司第五十五研究所 Method for epitaxially growing InGaAs on InP substrate
CN114232085B (en) * 2021-12-06 2024-02-06 中国电子科技集团公司第五十五研究所 Method for epitaxial growth of InGaAs on InP substrate

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